TW557532B - Heated substrate support assembly and method - Google Patents

Abstract

A substrate support assembly 30 comprises a support 38 with a substrate supporting surface 55 and a collar 130 comprising an electrical connector, whereby a voltage may be supplied to the collar 130 through the electrical connector. The collar 130 may pass a current therethrough to resistively heat the collar to a predetermined temperature before substrate processing. In another version, the temperature of the collar 130 may be controlled during and/or before substrate processing.

Description

557532 A7 B7 V. Description of the invention () Field of the invention: The present invention relates to the support of a substrate. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Background of the Invention: In the process of integrated circuits, the substrate is processed in the reaction chamber using excitatory gas. The substrate is mainly supported by a support in the reaction chamber, and a part of the support may include a dielectric material for covering the electrodes. The substrate is electrostatically clamped by charging the electrode, or is excited by the process gas in the reaction chamber, or both of these functions are achieved. In addition, the support includes a heater to heat the substrate, or a heat exchanger, such as a heat transfer fluid circulating in the channel 'to heat or cool the substrate. In addition, a heat transfer gas such as helium can be introduced under the substrate to increase the heat transfer rate to the substrate. Similarly, the ring or collar can be used as a gathering ring when it is on the pedestal or inside the support seat, to effectively guide the excitation gas directly toward the substrate, so that energy is concentrated on the substrate 'or as Barrier ring to reduce the exposure of the support in a corrosive environment, or to apply it to other substrate processing purposes. A problem arises with conventional reaction chambers when parts of the reaction chamber, such as the support in the reaction chamber, or parts on it, undergo temperature changes during processing of a set of substrates. For example, in different process stages, the lifting temperature of the substrate treatment usually exceeds 100 ° c, and a temperature fluctuation of 50 ec occurs during the process. During the process, the temperature of the parts in the reaction chamber will be different, which will cause the inconsistency of the substrate processing. In addition, when the temperature of a part is changed, a part of the entire surface of the substrate may not be processed uniformly. This inconsistency affects the performance of the substrate and the process capacity. Page 4 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) SW -------- Order ---- ----- 557532 A7 B7 V. Description of the invention () Therefore, it is necessary to maintain the consistency of the process temperature of each substrate and further control the temperature of the components in the process reaction chamber. Invention___Purpose and @ 沭: The present invention can meet the above requirements. 3 In one embodiment of the present invention, the 'substrate support assembly includes a support base having a surface for supporting the substrate, and a collar having an electrical connector, The electrical connector is used to apply voltage to the cuff. In another aspect of the present invention, the substrate processing reaction chamber includes a substrate support assembly having a support base and a collar. The support base includes a surface for supporting the substrate, a gas distributor, and a gas excitation energy. Device, an exhaust device, and a voltage supplier for supplying voltage to the collar, wherein the gas introduced by the gas distributor is used to treat the substrate on the support seat, and is excited by the gas exciter and by The exhaust is exhausted. In another aspect of the present invention, the substrate support seat heater includes a collar and a voltage supplier for applying a voltage to the collar to heat the collar. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the general notice on the back before filling out this page) In another embodiment of the present invention, the substrate is supported in the substrate process reaction chamber and the process reaction chamber A method for processing a substrate includes: supporting the substrate on a support seat of a process reaction chamber, applying a voltage 'on a part of the process reaction chamber to heat the part, and providing an excitation gas in the process reaction chamber. In another implementation of the present invention, In an aspect, a method for supporting a substrate in a substrate processing reaction chamber and processing the substrate in the processing reaction chamber includes providing support. Page 5 This paper is sized for CNS A4 (210 X 297 meals) " '* 557532 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Support and collar, heating the collar, and after heating the collar, support the substrate on the support base, and Can process gas into the process reaction chamber. In another aspect of the present invention, a method for assembling a substrate support base includes forming a collar around a portion of the substrate support base, and forming an electrical connector within the thin ring or connecting with the collar. The drawings are simple. To make the above and other features, aspects, and advantages of the present invention easy to understand, the drawings, narrative descriptions, and the attached application book will be used in conjunction with the drawings—not the scope of II to explain this in detail. An embodiment of the invention. However, each feature described in the present invention is not limited to the specific 3 drawings, but includes an appropriate combination of these features. Among them: Figure 1 is a side view of the reaction chamber and support base of the present invention; Figure 2a is this Figure 2b is a simplified circuit diagram of the collar and voltage supply of the embodiment of the invention, and Figure 2a is another simplified diagram of the collar and voltage supply of Figure 2a. Example of actual dress-intention; Figure 3b is a simplified circuit of the collar and voltage supply of Figure 3a; Figure 4 is a cross-sectional side view of an embodiment of a support assembly of the present invention; Figure 5 is a support assembly of the present invention A cross-sectional side view of another embodiment. FIG. 6 is a practical example of the collar and the control and monitoring system of the present invention. Figure 7 is another embodiment of the collar and control and monitoring system of the present invention. Page 6 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling (This page) C -------- Order ---------% Qin 557532 A7 B7 V. Schematic illustration of the invention (). Drawing ## Description: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 15 substrate 20 equipment 25 substrate process reaction chamber 30 support components 35 hands, 38 support base 40 electrostatic chuck 45 dielectric material 50 first electrode 55 surface 60 Exhaust port 65 Heat transfer gas source 70 Air duct 75 Electrode voltage supply 80 Substrate 85 Gas supply 90 Gas source 95 Gas nozzle 100 Gas flow controller 105 Exhaust system 110 Throttle valve 115 Second electrode 120 Magnetic field generation Device 130 collar 135 heating system 140 voltage supply 142 electrical connector 145, 1 50 electrical wire 152 electrical contact 155 parallel resistance 160 series resistance 165 slot 200 collar 21 0,220 second ring 215 shoulder 230 Three-ring 240 bulkhead 245 quartz tube 247 center buffer 250 control and monitoring system 260 controller 270 thermometer page 7 (please read the back of the page first; i will fill in this page) and order ------- -This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 557532 A7 B7 V. Description of the invention () (Please read the note on the back? Please fill in the matter (冩 Page) 280 Temperature Monitor Afl Make a detailed explanation: _ The present invention relates to a support base with a thermal collar, used to support the substrate in the reaction chamber, and a method for supporting the substrate on the support base. The following description and the accompanying drawings are used to illustrate the implementation of the present invention, but are not intended to limit the present invention. The Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a device 20 for processing the substrate 15, which includes a process reaction The chamber 25 can be, for example, an MxP, MxP Supere, or MxP eMax etching reaction chamber. These devices are purchased from Appl ied Materials, Inc. of Santa Clara 'California. For a detailed description, refer to US Patent No. 4,842,683 and Cheng et al. Patent No. 5,2 15,619, and U.S. Patent No. 4,668,338 granted to Maidan et al., Including the combination of all of them. As shown in Figure 1, an embodiment of the device 20 is a multifunctional The reaction chamber used for processing semiconductor substrates, such as US Patent No. 4,951,601 issued to Maydan et al., Also includes the entire content. It also provides control of the reaction chamber 25, circuit wiring, measurement and Other support functions. However, the present invention can also be used to make other kinds of substrates 15, such as non-conductive materials, such as flat displays, and can also be used in semiconductors. In general, the reaction chamber 25 includes a support assembly 30 for receiving the substrate 15 in the processing region 35, and the substrate 15 can be processed in the processing region 35. The support assembly 30 includes a support seat 38 For holding the substrate 丨 5. For example, the support base 38 may include an electrostatic chuck 40 and a dielectric that at least partially covers the electrode 50. Page 8 This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297) 1mm ---- 557532 Ministry of Economic Affairs. € Printed by the Consumer Affairs Cooperative of the Property Bureau A7 B7 V. Description of the invention () Material 45 'Dielectric material 45 has a surface 55 for receiving the substrate 15 and passing heat transfer gas The exhaust port 60, such as helium, can be controlled from the heat transfer gas source 65 to the air duct 70 ′ to control the temperature of the substrate 15 (as shown in FIG. 1), or the support seat 3 8 may contain Support members made of metal, such as aluminum. As another example, the 'support base 38 may be a vacuum or mechanical chuck or any other common support base. The electrode 50 located below the dielectric material contains a separate conductor (as shown in the figure) (Shown) or multiple conductors (not (Shown), it can be electrostatically clamped to the substrate 15 by the electrode voltage supply 75 plus an electrical bias. The substrate 80 is located below the electrostatic chuck 40, and can optionally include a heat exchanger such as a heat transfer fluid The process gas is introduced into the reaction chamber 25 through a gas supplier 85 containing a gas source 90 and one or more gas nozzles 95 terminating on the reaction chamber 25. The gas nozzle 95 may be positioned on the periphery of the substrate 15 (Shown in the figure), or a shower head (not shown) installed on the top plate of the reaction chamber, and the gas flow controller 100 can be used to control the flow rate of the processing gas. Exhaust system 105 removes used process gases and etching by-products from reaction chamber 25. Exhaust system 105 typically includes exhaust ducts that are directed to a plurality of pumps, such as rough or high vacuum pumps, to evacuate the gas in the reaction chamber 25. A throttle valve 1 1 is provided in the exhaust duct. The pressure of the gas in the reaction chamber 25 is controlled. Excited gas, such as gaseous plasma, is generated by the process gas. The gas exciter 75 combines electromagnetic energy, such as radio frequency (RF) or microwave energy, with the process gas in the processing region 35 in the reaction chamber 25. For example, the gas exciter 75 may include the first electrode 115, such as the electrical connection in the reaction chamber 25. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male f) (please read the back first) (Notes to fill out this page)

557532 A7 B7 V. The grounding side wall or top plate of the description of the invention, and the second electrode 50, may be the electrode 50 (as shown in the figure) located on the dielectric material 45 or another conductive material on the support assembly 30 Thermal element. The first and second electrodes 115, 50 are generally electrically biased based on the radio frequency voltage supplied from the electrode voltage supply 75 and are proportional to each other. The frequency of the radio frequency voltage applied to the first electrode 115 and the second electrode 50 is usually about 50 kHz to about 60 MHz. In other embodiments, the gas exciter may or alternatively include an electric induction antenna (not shown), which includes one or more coils for inductively connecting the RF energy to the reaction chamber 25. The electron cyclotron resonance of the magnetically enhanced reactor in the magnetic field generator 120 can increase the capacitance to generate a plasma, like a permanent magnet or an electromagnetic coil, to provide a magnetic field in the reaction chamber 25. More suitably, the magnetic field includes a rotating magnetic field having an axis and rotating parallel to the plane of the substrate 15, such as described in the aforementioned U.S. Patent No. 4,842,683. The reaction chamber 25 may also include a process monitoring system (not shown) to monitor the processes performed on the substrate 15. A typical process monitoring system includes an interferometry system to measure the intensity of light reflections from the layer being processed on the substrate 15 or a plasma jet analysis system to measure the intensity of light radiation from the type of gas in the reaction chamber 25 Changes (not shown). The process monitoring system is very helpful in detecting the end of the process performed on the substrate 15. The support assembly 30 shown in FIG. 1 may be formed by covering or embedding. The electrode 50 in the dielectric material 45 may include a dielectric material to prevent an electrical short circuit in the reaction chamber 25 when forming a plasma. . The dielectric material 45 contains relatively low radio frequency electric field absorption, allowing the radio frequency electric field emitted from the electrode 50 to be compatible through the dielectric material 45. The dielectric material Page 10 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Fill in this page and fill in this page) Order -------- Printed by the Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 557532

V. Description of the Invention (4) 1 It is composed of Tian Yun's materials and 4 points π ^ He Ke, and can penetrate the radio frequency energy added by the electrode 50 to allow the electricity and the processing electrode to pass through. The covering layer is compatible (please read the precautions on the back before filling this page). For example, the 'dielectric material 45 may also include a semiconductor material, which has a low degree of conductivity. The dielectric material 45 may have a smooth receiving surface to directly contact and support the substrate 15. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the dielectric material 45 may include (accommodate) a single and discrete structure to include the electrodes 50, or a single structure may be combined using thermally fused ceramics or polymers. Generally, the entire ceramic has the characteristics of low permeability and good conductivity, which can completely surround the electrode. The dense ceramic structure has high dielectric material collapse strength, and also allows higher RF power to be applied to the electrode 50. The dielectric material 45 may be formed with ceramic materials having a low permeability of less than about 20%, or even less than about 10%. Suitable ceramic materials include one or more of aluminum oxide, aluminum nitride, boron carbide, boron nitride, oxide >, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, and zirconia. The dielectric material C may also include a semiconductor material such as an undoped or doped ceramic material. Alternatively, the dielectric material 45 includes a polycrystalline thioimide sheet or a man-made fiber layer covering the electrode 50, and is composed of a pressure cooker pressure forming process. The electrode 50 with the dielectric material embedded therein may be made of a conductive metal to allow heat treatment or thermal sintering of the dielectric material with the electrode embedded therein. The dielectric material 45 having the embedded electrode 50 can be composed of a mixture of ceramic powder and a low-concentration organic bonding material by press-balancing, hot-pressing, mold-scale molding, or ribbon casting. The dielectric material 45 at least partially covers the electrode 50. It can be used to charge and charge to hold the substrate 15 to the receiving surface 55 with static electricity to stimulate the reaction. Page 11 This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 557532

V. Description of the invention (e.g. milk within τ 25, or both. For electrostatic clamping, the electrode w can be a unipolar or bipolar electrode. The electrode 50 is made of a conductive material, such as a metal, for example , Aluminum, copper, molybdenum or alloy. Molybdenum has good thermal conductivity and corrosion resistance in a non-oxidizing environment, such as when the electrode 50 is embedded in the dielectric material 45. The electrode 50 may generally include a planar shape to the substrate 15 The shape is conformal. For example, the electrode 50 may be a mesh-shaped electrical wire (not shown) that extends sufficiently under the entire substrate 15. In one embodiment, the support assembly 30 includes a collar 130 near the support base 38 or at The surroundings are the same as the electrostatic chuck 40 in the embodiment of FIG. 1. The collar 1300, for example, can protect the support 38 or the electrostatic chuck 40 during etching or etching, such as U.S. Patent No. 5,636, 〇. As described in No. 98, it is used as a shield to reduce the contact between the corrosive gas in the reaction chamber 25 and the dielectric material 45 or other parts. In this embodiment, the collar may include a surface to contact the dielectric material 45. Surfaces are bonded to each other to reduce The gas flow between the electrical material 45 and the collar 13 0. The collar 1 3 0 may be formed of the same or different material as the dielectric material 45. For example, in this embodiment, the collar 1 3 0 may include a Or more silicon, polyethylene, polyurethane, polyurethane, polystyrene, nylon, polypropylene, polyethylene Compounds (polyvinylchloride), polyethylene terephthalate, fluoro ethylene pol y propylene copolymers, polytetrafluoroet hylene, acrylate Butyl, butyl, chlorosulfonated polyethylene, epoxy propane (epichlorohy, page 12) This paper applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the back (Please fill in this page for attention)

'1 IIIIII Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 A7 B7 V. Description of the invention () drin), chlorinated rubber, guw rubber, neoprene, nitrous acid Salt (nhrile), polybutadiene, polyisoprene, polysulfide ^ olysulfide. Either or in addition to being used as a shield, the collar 13 may have other uses in the support assembly 30. For example, in an embodiment, the collar 13 may be a dielectric material or a semiconductor material, and a channel is supplied through the chuck 40 to collect energy on the substrate 15 as in US Patent No. 5 , 748, 434, which is referenced in its entirety and incorporated herein. In another embodiment, the collar 130 may be adapted to preferentially direct the excited gas towards the substrate 15. The collar 30 may include a portion (not shown) that extends above the dielectric material 45 to form an internal recess to support the substrate 15. In yet another embodiment, the collar 13o includes a dielectric material. The material is placed adjacent to or close to the collet 40 to allow the conductor's RF power from the conductor below the collar to pass through the collar 1 3 0.容 连接 到 plasma 3 5. Because this is believed to result in an extended plasma sheath, providing a uniform plasma to the substrate i 5 process. It is also believed that the compatible coupling through the collar allows the plasma to generate a self-bias to improve and clean the handling of the collar. These treat the generation of deposits, for example, to polymerize species in the plasma and can usually consist of fluorine and carbon compounds. Preparation can also be used to disassemble the DC portion of the RF / DC electrode by allowing only RF frequencies to be coupled to the conductor. Suitable dielectric ceramic materials for assembling the collar 130 include ai uminum oxide 'aiuminilin nitride, bor on carbide, boron nitride, diamond, oxygen Page 13 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 meals) (Please close the back; please fill in this page for the Italian matters) ------- Order --- ------ Line Λ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 A7 ______B7 V. Description of the invention (silicon oxide), nitride nitride (siiicon nitride), oxidation (η tanium oxide), Titanium carbide, zirco nium boride 'Carbonization fault: (zirconium carbide), and equivalent (eq uivalent) or mixture. Suitable polymer materials for forming the collar 130 include polyimide, polyketone, polys ulfone 'polycarbonate, polystyren e) 'Polyvinyl chloride, polypropylene, polyethersulfone, polyethylene, η yio η, silicone, and rubber. During processing, the substrate 15 is transferred by the robotic arm (not shown) from the load lock conversion reaction chamber (not shown) through the slit shutter into the processing area 35 of the process reaction chamber 2 5 "put the substrate 15 The support base 38 is clamped and fixed by the electrostatic chuck 40. It is also optional to control the temperature of the substrate 5 by applying a heat transfer gas through the penetrating holes 60 on the surface of the electrostatic chuck 40. It is also optional to allow the cooling liquid to be circulated through the substrate 80 to control the temperature of the substrate 80 and / or the support seat 38. Thereafter, the processing conditions in the process reaction chamber 25 are set to process specific layers or layers on the substrate 15 or to perform other reaction chamber processing. The processing conditions include one or more excited gas components and flow. The power level 'Gas pressure' and the temperature of the substrate. It can also be processed on many different workbenches, each with different processing conditions. For example, in the etching process, one or more components of an energizing gas are provided for etching the substrate 5 and the process reaction chamber 25, which include an etching gas. Etching gas suitable for the etching layer on the substrate 30, including, for example, HCM, BC13, HBr, Br2, Cl2, CC14, SiCl4, SF6, F2, page 14. The wattage of this paper conforms to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the unintentional matter on the back before filling out this page) -------- Order * -------- Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () NF3, HF, CF3, CF4, CH3F, CHF3, C2H2F2, C2H4F6, c 2F6, C3F8, C4F8, C2HF5, C4F10, CF2C12, CFC13, 02 , N 2, He and mixtures. The process chamber 25 is typically maintained within a pressure range from about 0.1 to about 400 mTorr. The composition of the etch gas is selected to provide a high etch rate and / or a high etch selection ratio for the etch overlay and the corresponding underlayer. When many layers are etched in sequence, the first, second, and third etch gas components may be sequentially introduced into the process reaction chamber 25 to etch each specific layer. Alternatively or additionally, other processing procedures, such as plasma enhanced chemical vapor deposition (CVD), ion implantation, substrate cleaning, reaction chamber cleaning, or similar procedures Both can be completed in the process reaction chamber 25. The processing gas may be excited and maintained under a first processing condition suitable for etching, for example, the substrate 15. Referring to FIG. 1, the excitable processing gas is provided in the processing area 35 via compatible and / or decoupling coupling energy, and is fed into the processing area 35 by a gas exciter 75 or by applying microwaves to a remote area An etching gas inside or in the reaction chamber. The excited energy processing gas means that the processing gas is activated or excited, so one or more of the separated species, non-separated species, ionized species, and / or uncharged species are activated to a higher energy state, that is, more Easy chemical reaction. In one embodiment, the processing gas is excited by applying a radio frequency bias voltage to the processing electrode, or by applying a radio frequency source current to an inductor antenna surrounding the process reaction chamber 25. The process gas is ionized in the electric field of the application to form ions and non-charged species to process the substrate 15 and to form volatile pages. Page 15 This paper applies Chinese National Standard (CNS) A4 (210 X 297). (Please Please read it on the back first; fill in this page with 1 note). Line, A7

557532 5. Description of the invention () The type of gas to be extracted from the reaction chamber 25 of the process. During the processing of a substrate 15, temperature changes in the components of the support assembly 30 or the process reaction chamber 25 may cause the substrate 5 to be processed inconsistently. For example, it has been found that the problem of handling deposits is related to temperature changes. A treatment deposit 差别 is related to differences in treatment rates from one substrate to another or across the surface of a substrate. The temperature of the reaction chamber parts in this process varies from 50 ° C to 100 ° C during a process. However, due to differences in material, geometry, and location, temperature changes between two or more parts are generally different. Consistent and consistent supply of treated substrates from one substrate to the next in a set of substrates is ideal for temperature changes in these parts. Also, due to the processing conditions and the structure of the reaction chamber, the temperature across a part during the processing of a substrate 15 can be different. This change may lead to a difference in processing rate that may cause damage to a substrate 15 or undertreatment. When processing a group of substrates 15 in a process reaction chamber 25 that includes a temperature-controlled support base 38 and a collar 130 that cannot control temperature, a problem of handling deposits may occur. The temperature of the collar 1 3 0 which cannot be temperature controlled depends on the processing conditions and its initial temperature. Because the initial temperature of the support seat 38 is controlled, but the initial temperature of the collar is not controlled, the temperature change between these different parts may be inconsistent β from one substrate 15 to the next substrate. The initial temperature change may cause processing deposits. During a typical process, the temperature of the collar 130 may rise above loot due to energetic gas or ion bombardment from other sources, and in some cases higher than 30 (TC or 40 (TC. The 16th page of the paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Before the substrate 15 is processed, the collar 130 stays at an initial temperature, Ti. As the first substrate 15 is processed, the collar temperature is raised to a first processing temperature, TP (i), which can change over time. After the process is completed, the first substrate is removed from the reaction chamber and a second substrate is provided. During the transition period, the temperature of the collar 130 drops to an initial temperature of the second substrate, Tii, which is between the initial temperature of the first substrate, and the first substrate processing temperature, Tp⑴. As the second substrate is processed, the collar temperature is raised again, but this time to a second processing temperature, Tp (ii), which is higher than the first processing temperature. As each substrate 15 is processed, this cycle will continue until a steady state initial temperature, Tss, is reached. After a certain number of substrates 15 have been processed, the collar temperature at the start of processing will be the steady state temperature, Tss, and the processing temperature for each substrate 15 will be an approximately steady state processing temperature, Tp (ss). Treatment of the substrate 15 before the steady state temperature, tss, is reached may cause inconsistent processing and inappropriate quality. It has been found that by controlling the temperature of parts that are not controlled by temperature, such as a collar 130, it is possible to reduce or even eliminate the problem of handling deposits. For example, in one embodiment of the present invention, the collar 130 is heated to a steady state temperature, Tss, before the first substrate 15 is processed. In this mode, by reducing or removing the sacrificed processed substrate, the initial temperature of the collar during the temperature transition period is increased, thereby increasing the appropriate number of processed substrates. Similarly, in an embodiment of the present invention, a heating system 1 35 can be provided for the process reaction chamber 25 to heat the collar 13 or other parts of the process reaction chamber 25. In the embodiment shown in FIG. 1, the heating system 1 3 5 includes an AC or DC voltage supplier 1 40 to pass through the electrical connector 1 4 page 17. This paper standard applies to the Chinese National Standard (CNS) A4 Regulations (21〇χ 297 公 t) (Please read the secret information on the back of 璜 before filling this page)

_______T_______.! I II 1 II Xikou I — — III A7 557532 V. Description of the invention (2 Apply an AC or DC voltage to the collar 130. When a voltage is applied to the collar 130, the collar 130 is used to transmit For a current passing through the collar, the collar 13 includes a small resistance of -h to allow the flow of the applied voltage, two currents. In one embodiment, the collar includes a resistor of less than about 10 kQ. In addition, the collar 130 includes a high resistance, so the current flowing through it increases the temperature of the collar. In one embodiment, the collar 130 includes a resistance of at least 2Ω. Electrical connection The device 142 may include one or more electrical wires 145, 150 extending from the voltage supply 140. The wires 145, 150 may be embedded within the collar 130 or otherwise have electrical contact with the collar 130, or the wires 145, 150 may An electrical contact 152 is in contact with or on the collar 130. In one embodiment, an electrical connection is provided through the electrical contact 1 52, like a fragrant clip-type connector. One alternative is The wires 145, 150 may be permanent or releasable directly connected to the collar 1 30 or less. The collar 13o forms a resistive part in a circuit that includes a voltage supply 14o, wires 1 45, 150, and a collar 130. Due to the resistivity of the collar 13o, The electrical energy is converted into thermal energy in the current transmission medium of the collar 130. The collar 1 30, in one embodiment, may include a semiconductor material having intrinsic resistance and conductive properties suitable for heating the collar 130. Suitable The semiconductor ceramic materials of the human assembly collar 130 include, kl ^ doped ceramic materials, such as the ceramic mixture described herein, such as aluminum and aluminum oxide and other conductive additives such as silicon, or 1 mixture of hair and silicon nitride.-Generally speaking, the "conducting increase additive" passes through the void or granular boundary of the ceramic "...:-formed in the structure to the neodymium for increased conduction. Half page 18 Private paper size timely family standard (CNS) A4 specification (i (Please read the precautions on the back before filling this page

-ϋ -HI in an I —ϋ I of · n I Iff I n n i ^ i I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs x 297 (堃) 557532 V. Description of the invention () A7 B7

The conductive material may be a material that is chemically compatible in an energized gas environment. For example, the collar 130 may include a material, such as a dream, as a type of gas by-product that generates a substrate similar to that of a dream in an excitable & gas environment and thus may limit or reduce contamination of the substrate. Alternatively or additionally, the collar 130 may include a material, such as silicon carbide, which is relatively non-reactive in an energized gas environment. In an embodiment, the collar may include a resistivity of about 10-3 QCm to about 103 Qcm, and more preferably about 1 (Γ2Ω〇ιη to about 102 Qcm. For example, a collar 130 includes one or more A large amount of silicon, silicon carbide, boron carbide, or the like has been shown to be heat-resistant to a relatively low voltage supplied. Semiconductor materials can have a resistance from about 2Ω to about 10kQ, which is more suitable. Is a resistor from about 50 Ω to about 100 ω. The most suitable is a resistor from about 100 Ω to about 200 Ω. An electric dust supplied by a voltage supply 140 The collar may be heated to a desired temperature, such as from about 24 volts (v ο 11 s) to about 1,000 volts, or the temperature may be controlled as discussed below. In one embodiment, the Heat the collar to a desired temperature, such as steady state temperature, Tss, the temperature of a substrate 15 or a group of substrates previously processed. The process reaction chamber 25 shown in Figure 1 has determined a suitable Steady state temperature, T ss, for example For example, when a dielectric layer on a substrate 15 is etched, it must be at least about 80 ° C. If it is from about 100 ° C to about 300 ° C, it is better, and most preferably about 200 ° C. The wires 145, 150 can be oppositely disposed within or above the collar 130, as shown in Fig. 2a, to provide a parallel resistance 1 5 5 arrangement as shown in Fig. 2b. For page 19, this paper scale Applicable to China National Standard (CNS) A4 (210x 297 cm) (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 V. Description of the Invention (Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 This architecture, the voltage supply 140 can be used for a 130 provides a voltage of about 200 volts for a period of about 300 seconds to heat the collar 130 from room temperature to the steady state temperature Tss. Alternatively, as shown in Figures 3a and 3b, the collar 130 may include one or more resistors to effectively pass through the electrical separation wires 145, 150 to form a series resistance, such as by providing a slot i 6 in the collar, 3 5. Any other circuit arrangement It is considered that the resistance heating of the collar 130 can be alternately provided. By preheating the collar 130, a group of substrates can be processed without sacrificing the initial substrate, thereby adding up to 25 substrates 15 to Achieving the allowable capacity of the device processing "This is equivalent to an effective time and material saving. In addition, the preheating also eliminates the step of deciding when acceptable processing conditions have been reached and goes one step further. Improved processing throughput and reduced operating costs. In addition, resistance heating has several advantages over radiation or other types of heating. For example, it can heat the desired part without seriously affecting the temperature of the surrounding parts & ' Money management-the material caused by the substrate is reduced to a minimum of 0. In an embodiment, the slot 165 in Figure 3b can also be used to compensate the collar 13 and the support seat 38 in the reaction chamber 25 or other Related thermal expansion between the components. Due to differences in materials and / or geometry, heating of the support assembly 30 can cause different thermal expansions of the support assembly 30 teeth < + 仵 ... apart from different relative thermal expansions Parts can be heated to different temperatures. The effect of temperature on the support assembly 30 may cause corrosion of the support base and inconsistent strength of the electrostatic chuck. For example, when the collar i 3 is applied, the paper is suitable for China again. National Standard (CNS) A4 specification (21〇X 297 male i " (Please read the precautions on the back before filling this page)

557532 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ____- —_B7 V. Description of the invention () 0 When used as a shield for the support seat 3 8 to prevent the etching gas from passing through, the collar i 3 0 can be better than the support seat 3 8 Relatively more or less expanded, for example, more or less than the dielectric material 45 to create or expand the gap, and the etching gas can pass through the gap. In order to reduce or compensate the effect of thermal expansion on the performance of the support assembly 30, the collar 130 may include a thermal expansion compensation slot 65. When this collar is heated, the slot 165 provides a gap for the expansion of the collar 130. The slot 165 allows the collar to thermally expand into the gap, and changes the dimensions caused by receiving or absorbing heat into the gap ', thereby reducing the radial and height expansion of the collar 130. In this way, the thermal expansion slot 165 may include a size larger than the net change in size that may occur when the collar 130 is raised from a low temperature to a substrate processing temperature, or vice versa. In this way, when the collar 3o is expanded at a faster rate than the dielectric material 45, there is little or no expansion or gap expansion. As a result, the collars 3 can be used to protect the dielectric material 45 from high temperatures or different temperatures. In addition, when the collar 130 expands at a slower rate than the dielectric material 45, the slot 65 reduces the internal stress in the collar 1 3 0. The two opposite sides of the slot 1 65 are allowed to extend apart as the collar 1 When an extension member within 30 is forced apart. Of course, the slot 1 65 may take a different form than that shown in Fig. 3a. For example, the slots 165 may be angled or inclined, or a plurality of slots 165, or partial slots may be provided. The collar 130, in one embodiment, may include a collar 200 in combination with other collars or components, as shown in FIG. 4, as the same second collar 2 1 0. The collar 1 3 0, which can be regarded as a protective cover in this embodiment, is generally referred to as a ' processing kit '. Handling kit around the clip Page 21 This paper is again applicable to the Chinese National Standard (CNS) A4 specification (21〇 χ 297 meals) < Please read the precautions on the back before filling this page)

557532 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (㈣ Usually made of a dielectric material. The protective cover can also be used through the husband's head channel energy to gather the energy on the substrate 15 to The "plasma 35" is preferentially directed at the substrate 15 to allow radio frequency power to be ly coupled to the substrate 35 by compatible coupling to send an extended plasma sheath to the substrate 15, or as above The discussed serves other purposes in the support assembly 30. In an embodiment, the collar 200 may include one or more semiconductor materials, and the wires 145, 150 may be connected thereto. Alternatively, one of the other parts, like the second ring 21, may be heated, or a plurality of parts may be heated. In another embodiment, as shown in Fig. 5, a small portion of the collar 130 is supported on a shoulder 215 of the dielectric material 45. As shown in the embodiment, the collar 200 is positioned at or near the shoulder 215. This embodiment can provide an improved Φ seal to protect the dielectric material 45. In this embodiment, the collar 1 3 0 includes a collar 200, such as a silicon ring, a second collar 22, such as a quartz ring, and a third collar 2 3 0, such as a Rings of quartz or silicon. The second loop 220 may act as a masking loop of a dielectric material between a radio frequency excitation support 38 and a plasma. The third ring 230 may be a cover ring, such as a cover ring 220, which is used for lifting processing and / or reducing corrosion located below the ring. A voltage · may be applied to any one or more rings in the collar 130. As shown in Figure 5, applying a voltage to the cover ring 230, such as a silicon cover ring, often has a greater thermal mass than the collar 200. The support base may further include an inspection wall 240, one or more quartz tubes 245, and a center buffer 247. In the example shown in Figure 4 and Figure 5, any or more of the collars. Page 22 This paper size applies the Chinese National Standard (CNS) A4 regulations (210 X 297 meals) n ϋ ϋ ί I nn «n II · ϋ n ϋ ϋ III-° J · ϋ II ϋ nnn I (please read the silence on the back before filling out this page) 557532 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Inventions Note (1 30 parts can be provided with a slot as shown above 65. In one embodiment, the collar ring 200 includes one or more slots 165 and serves as a clamping ring. The collar The slot i65 of the collar 200 provides sufficient thermal expansion compensation to allow the collar collar 200 to be mounted within the shoulder 2 1 5 to achieve a very tight tolerance, thereby further improving the collar's protection capabilities.

In one embodiment, the collar 130 may include one or more materials having a coefficient of thermal expansion (CTE) thermal expansi (cT E) of the electrostatic chuck 40: t: 20% of CTE . For example, when the dielectric material 45 includes a ceramic material, such as alumina or aluminum nitride, the collar 13 may include a material having a coefficient of thermal expansion from about 8 to about 9 Ppm / t, such as boron carbide, to the collar. 130 and chuck 40 provide a suitable level of consistent CTE. The heating system 1 3 5 can heat the collar i 3 〇 to a steady state temperature, and Ts s' is then closed, or a heating system can be used to control the collar 13 in a part of a group of substrates or throughout the processing period. temperature. In one embodiment, a control system may be used to control and / or monitor the temperature of the collar 130 during the initial warm-up period and / or during processing, as shown in FIG. In this embodiment, the power system includes a monitoring system 25, which has a controller 260 operable to control the heating of the shaft, such as by adjusting the voltage supplied by the voltage supply 140. Mochi supplied The voltage you used for the collar 1 3 0. In addition, one or more thermometers 270 can be set up, close to, or connected to the collar 130. In the φ column of the embodiment shown in Fig. 6, the thermometer 270 is set at about the midpoint between the wires 145, 150, and the average temperature of the collar 1 30 is approximated by # Λ1. A signal value 温度 π 疋 1 about the temperature of the collar 130 has been found. A temperature monitor 28 ° is available. (Please read the precautions on the back before filling in this page.)

I 1 IIIII 557532 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (so that it is located in the controller 2 60). Cold and soft avoiding the door, the degree monitoring monitor applies the controller 260 temperature information It can then respond to the temperature information—generating control money β. For example, 'the control signal can be used to drive or control the voltage supply 14. In this way,' the controller 260 can control and adjust the operation of the heating system 135 based on the monitored data. The thermometer 27 can be 13 or close to the collar-a conventional thermistor or a similar temperature measurement probe. Alternatively, the thermometer can be an optical pyrometer or a fluorescent probe The controller 260 may include a computer-readable medium having computer-readable code built therein to monitor the output signal from the temperature monitor 28 and perform at least one of the following steps: ⑴ stop the heating process When a predetermined temperature, such as a steady-state temperature, has been reached, 8: 5; (⑴ adjusts the voltage supplied to the collar 130; (in) by making a secondary source (not (Shown) heating or cooling the collar 130, controlling the temperature of the collar 130; (iv) adjusting the processing conditions in the process reaction chamber 25; (v) stopping a processing program in the process reaction chamber 25; 1) providing an alarm Signals to inform an operator of unwanted collar temperatures, or (vii) maintain an applied voltage for collars 1 30. The controller 26 can control the operation of the voltage supply 140 or the process reaction chamber 25 The controller 260 may include a computer code product that controls a computer including one or more centr al processor units (CPUs) interconnected with a memory system and its surrounding control parts, for example, A PENTIUM microprocessor, Intei Cororation, California. The central control unit of the controller 260 can also include page 24. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male) No) (Please read the unintentional matter on the back before filling this page)

557532 A7 B7 V. Description of the invention (application specific integrated circuits) to operate a specific part of the reaction chamber 25. An interface 260 between an operator and the controller can be provided, It can be, for example, a cathode ray tube monitor and a light pen (not shown) with a light source and a light sensor at the front end. To select a specific picture or capability, the operator touches a specified range of the cathode ray tube monitor and Press a button on the pen. The touched area changes its displayed color or a new menu or screen to confirm the communication between the light pen and the cathode-ray tube monitor. Other devices, such as a keyboard, slide A mouse or an indicator communication device can also be used to communicate with the controller 260. The computer code of the central processing unit and other devices operating the computer can be written in any conventional computer-readable programming language, for example, the combination 浯 i, C, C ++, or pascai β code can be added to a single file, or many files, using a general text editor and saved or stored In a computer-accessible medium, such as a computer's memory system. If the input coded text is in a high-level language, the code will be compiled into a link, 纟 τ »to a pre-programmed library routine ( Hbrary r〇utines an object code and a compiled program code (c〇mpiler c〇de). In order to perform the connection, please read the back first, note the matters before you fill in

I

II

I

The object code printed and compiled by the Intellectual Property Office of the Ministry of Economic Affairs and Consumer Affairs Co. is used by the system user to make the computer load the code into the memory to complete the work found in the computer program. Can be provided for any suitable computer operating system, for example, Windows (Windows) operating system is implemented by Microsoft (Micr0sft) or operating system (0) In the example, the control and monitoring system 25 can monitor the collar 13〇 page 25

557532 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. The temperature of invention () and provides an output signal, or a control signal, is triggered when the temperature exceeds or drops by a predetermined level. When the temperature of 130 falls below an acceptable temperature of a preset and input range of the operator, the controller 260 can generate a signal to cause the voltage supply 140 to increase the voltage applied to the collar 130 to raise the temperature of the collar 130. Conversely, when the temperature exceeds an acceptable range of the temperature, the controller 260 can cause the voltage supplier 140 to reduce the voltage applied to the collar 130. The control and monitoring system can continuously or periodically check the temperature of the collar 130 and continuously or periodically adjust the applied voltage relatively. In an exemplary embodiment for controlling the operation of the support base 38, the acceptable range of temperature is from about 100 ° C to about 350 ° C, and more preferably from about 200 ° C to about 250 ° C. . (:. The voltage supply originally provided approximately 208 volts and was adjusted in approximately 5 volt increments. The controller 260 can compare the monitored data with a " look-up " table in a continuous feedback loop. One implementation In the example, the control and monitoring system 250 can be used for a substrate 15 or a group of substrate processing procedures from beginning to end. In another embodiment, the control and monitoring system 250 can be used as a group of substrates. Each substrate is placed on a support 38 placed in the reaction chamber to ensure that the collar 130 is at a steady state temperature Tss at the beginning of the processing procedure for each substrate 15. In another embodiment, as The embodiment shown in FIG. 7 can provide a plurality of thermometers 2 70 to determine the temperature of the collar 1 3 0 in the location space. It is shown in the embodiment that four thermometers are provided to monitor the surroundings of the collar 1 3 0 90-degree interval temperature, however, other architectures and / or more or less thermometers are also available. In one embodiment, the temperature monitor 2 〇 From page 26 This paper standard applies Chinese National Standard (CNS) A4 size (210 X 297 1½) (please first Read the notes on the back and fill in this page) Order ---- 557532 A7 B7 V. Description of the invention () Calculate the average value of the temperature of the thermometer 270 and provide the average temperature information to the controller that controls the heating system 1 3 5 Controller 2 6 0 'as discussed above. In another embodiment, the temperature monitor 280 or the controller 26 individually analyzes the signals sent by the thermometer 270. ^ By analysing these signals individually, it can be determined Whether an important temperature change exists across the surface of the collar 130. A significant temperature change can cause the substrate 15 to lack uniformity in the surface treatment. When the temperature of a part of the collar 130 is determined to be different by more than one At a predetermined number, such as about 10 ° C, from any other part, the controller 260 may generate a control signal in response. For example, the controller 260 may perform at least one of the following steps: (i) stop the base Material processing procedures, (ii) provide an alarm signal to notify the operator of the existence of an unwanted condition; (iii) adjust the temperature of a suitable portion of the collar 130 through a secondary source ( (Illustrated); (iv) adjust the voltage supplied to the collar 130; or (v) adjust the processing conditions in the process reaction chamber 25. In one embodiment, when an important temperature change is found by an operator, a An alarm signal is issued to indicate that inspection of the substrate 15 or a group of substrates is available. In another embodiment, a separate heating system 1 3 5 may be provided to control the collar under the control of the controller 260 Different parts of 130 are heated. When the detected temperature is within a predetermined range that is related to each other, the controller 260 can generate a voltage that causes the voltage supply to continue to supply the collar 1 30 with substantially the same voltage. control signal. In one embodiment, the collar 130 may include a polymer hardened lead block, such as U.S. Patent No. 5,990,017, which is incorporated herein by reference in its entirety. In this example, the paper size of the collar 1330 page 27 applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the unintentional matter on the back before filling this page) ϋ- m H · ϋ nn ϋ one lot · iln · 1 nt— n < printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 A7 — _B7______ 5. Description of the invention () Heating to a polymerization temperature to obtain a desired oxygen -Increase in -silicon etch selectivity. The heating system 135 and / or the control and monitoring system 250 effectively heat or control the temperature of the collar 130 to provide a high oxygen-to-silicon etch selectivity during the processing of a substrate and uniformly process the substrate. The collar 130 is heated as a polymer hardened lead block to an initial temperature and / or can be controlled throughout the process. In one embodiment, a silicon collar 130 is maintained at a temperature from about 180 ° C to about 220 ° C. However, the temperature range can vary greatly depending on the processing conditions. The heating system 1 3 5 may be used alternately or additionally to heat or control the temperature of other parts of the process reaction chamber 25. For example, a part inside a support seat, a gas distributor 95 or a reaction chamber wall adjacent to a substrate 15 of hot gas can affect the processing of the substrate 15 while it is under control. Therefore, for example, on a support 38 or a gas distributor 95 or any part of a reaction chamber wall, a heating system 135 and / or a control monitoring system 250 is ideal. Although certain preferred embodiments have been described in detail in considerable detail with respect to the present invention, many other embodiments should be apparent in the field in which related technologies are well known. For example, supports, collars or other parts can be used in other process chambers. It is only necessary to further understand that the collar or other parts may not necessarily be of any suitable shape or size and need not necessarily be a circular cross-section of the drawing. For example, the collar member may be oval, square, rectangular, polygonal, or any other shape. / Therefore, the spirit of the invention and the scope of additional patents should not be limited to the description of the preferred embodiments contained herein. Page 28 This paper size applies to China National Standard (CNS) A4 specifications (210 (please read the precautions on the back before filling this page)

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (297 gigabytes)

Claims (1)

557532 A8 B8 C8 D8 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application (ii) An electrical contact is connected to the collar. 8 · The support assembly according to item 1 of the scope of patent application, wherein said collar comprises a semiconductor material. 9 · The support assembly according to item 8 of the scope of the patent application, wherein the above-mentioned collars include at least one of silicon on silicon carbide, silicon carbide, and boron carbide, or a combination thereof. 10. The support assembly according to item 8 of the scope of patent application, wherein said collar comprises a dopant. 11 · The support assembly according to item 1 of the scope of patent application, wherein the above-mentioned building block includes an electrode, and at least a part of the electrode is covered with a dielectric material. 1 2 · The support assembly according to item 1 of the scope of the patent application, wherein the collar described above comprises a dielectric material. 1 3 · The support assembly according to item 12 of the scope of patent application, wherein the dielectric material includes a ceramic material. 1 4 · The branch assembly as described in item 1 of the scope of patent application, wherein the above-mentioned collar includes a ring portion. _____----- Does this paper size apply? @S 家 标准 (CNS) A4 Specification) ------------- 1 ------- Order --------- Line—AWI (Please read the Please fill in this page again for the matters needing attention) 557532 A8 B8 C8 D8 VI. Application scope of patent 1 5 · The support assembly described in item 1 of the scope of patent application, wherein the collar further includes a slot. 16 · The support assembly according to item 1 of the scope of the patent application, wherein the above-mentioned collar includes a surface for connecting the pedestal 'to reduce the gas flow therebetween. 17. The support assembly as described in item 1 of the scope of patent application, wherein the above-mentioned collar is used to guide the excited gas' to face the base located on the supporting seat. In the supporting assembly, the above-mentioned collar includes a kind of material, so as to form protective deposits on the substrate of the supporting base. (Please read the precautions on the back before filling this page) ------- Order · — Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 19 · A substrate processing chamber containing at least one support seat for Supporting a substrate; a gas distributor; a gas exciter; an exhaust device; a semiconductor element; and a voltage supplier for providing a voltage to the semiconductor element, wherein the gas introduced by the gas distributor is used The gas is used to treat a substrate on the support base, and the gas exciter is used to make the gas line 31-line. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 557532 6. Scope of patent application Physical energy 'and exhaust the gas through the exhaust device. 20. The substrate process reaction chamber according to item 19 of the scope of the patent application, wherein the support base includes an electrode and a dielectric material that at least partially covers the conventional electrode. '1 2 1. The substrate process reaction chamber according to item 19 of the scope of patent application, wherein the above-mentioned semiconductor element is used for transmitting a current, and when the current flows, the semiconductor element having a sufficiently high resistance value It can be used to heat the semiconductor element. 22. The substrate process reaction chamber according to item 19 of the scope of the patent application, wherein the above-mentioned semiconductor element is used to transmit a current, and when the current flows, the voltage supply provides sufficient voltage to heat the semiconductor element . 23. The substrate processing reaction chamber according to item 19 of the scope of application for a patent, wherein the semiconductor element is a collar around the support base. 24. The substrate process reaction chamber according to item 19 of the scope of patent application, further comprising one or more temperature detectors to detect the temperature of the semiconductor element. 25 · The substrate process reaction chamber as described in item 24 of the scope of patent application, more package _ page 32 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)----- I- --I ----- t ----------- < Please read the notes on the back before filling in this page) 557532 ΛΟ B8 C8 D8 6. Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The scope of the printed patent includes a controller to respond to the detected temperature. 26. The substrate process reaction chamber according to item 1 of the scope of the patent application, wherein the controller is used to generate a control signal to at least one of the following steps: (1) if a predetermined 1 overflow is reached The voltage applied to the semiconductor element is terminated; (ii) adjusting the voltage applied to the semiconductor element; (Hi) controlling the temperature of the semiconductor element; (iv) adjusting the process parameters in the process reaction chamber; (v) Terminate the processing procedure in the process reaction chamber; (vi) provide an alarm signal; and (vii) maintain the voltage applied to the semiconductor element. 27. The substrate process reaction chamber according to item 19 of the scope of the patent application, further comprising a plurality of temperature detectors for detecting the temperature of different parts of the semiconductor element, and a controller for responding to the detected temperatures. 28. The substrate process reaction chamber described in item 27 of the scope of patent application, further comprising a controller for responding to the detected temperature. 2 9. The substrate processing reaction chamber according to item 28 of the scope of patent application, wherein the above-mentioned controller is used to generate a control signal to perform at least one of the following steps: page 33 This paper standard applies Chinese national standards (CNS) A4 specification (210 X 297 mm) ------ ^ --------- ^ (Please read the precautions on the back before filling out this page) 557532 ΛΟ ΒΟ C8 D8 VI. Application Patent scope (1) Stop the processing procedure of the substrate; (Please read the precautions on the back before filling this page) (ii) Provide an alarm signal; (in) Adjust the local temperature of the semiconductor element; (iv) Adjust the The voltage of the semiconductor device; (v) adjusting process parameters in the process reaction chamber; and (vi) maintaining the voltage applied to the semiconductor device. 30. A substrate support base heater, comprising at least: a collar; and a voltage supplier for supplying a voltage to the collar to heat the collar. 3 1 · The substrate support seat heater as described in item 30 of the scope of patent application, wherein the above-mentioned collar can allow a current to flow therethrough, and the collar has a sufficiently high resistance value to heat when the current flows. The collar. 32. The base support heater according to item 30 of the scope of the patent application, wherein the resistance value of the above-mentioned collar is at least about 2 Ω to about 1 Ok Ω. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 33. The substrate support heater described in item 32 of the scope of patent application, wherein the above-mentioned collars include semiconductor materials. 34. The substrate support base heater as described in item 33 of the scope of the patent application, wherein the above-mentioned collar at least contains silicon (silicon), silicon carbide (siHeQn _____ page 34__ ^ Paper standards are applicable to Chinese national standards ( CNS) A4 specification (210 X 297 public ϋ '^ ΛΟ B8 C8 D8 557532 6. One of patent application scope carbide) and boron carbide (boron carbide) or a combination thereof 35. The base as described in item 30 of the scope of patent application The material support base heating piano,…, ^ includes one or more temperature detectors to detect the temperature of the semiconductor element. (36. The substrate support base heating described in item 35 of the scope of patent application includes a control And a device for controlling the voltage applied to the collar and responding to the detected temperature with Λ. 37. A method for supporting a substrate in a process reaction chamber and processing the substrate in the process reaction chamber, the method at least ·· Support the substrate on a support base in the process reaction chamber; apply a voltage to a collar on the support base; and provide an exciting gas in the process reaction chamber. 3 8 · If a patent is applied for The method described in item 37, wherein said collar comprises a semiconductor material. 39. The method described in item 37 of the scope of patent application, further comprising controlling the temperature of the collar. 40. As the item 37 in the scope of patent application The method described above also includes detecting one of the temperature of the collar. Page 35 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) f Please read the precautions on the back before filling in this Page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 IIIII ^ · 11111111 I --- I--IIIII I ---------- 557532 6. Scope of Patent Application Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs • The method described in item 40 of the scope of patent application, further includes controlling the temperature of the collar in response to the measured temperature. 42. A method of supporting a substrate in a process reaction chamber and processing the substrate in the process reaction chamber, the method at least comprising: supporting the substrate on a support in the process reaction chamber; applying a voltage to the A semiconductor element in a process reaction chamber; and providing an excitation gas in the process reaction chamber. 43. The method according to item 42 of the scope of patent application, comprising at least providing a collar around the support base, and the voltage is applied to the collar. 44. The method according to item 42 of the scope of patent application, further comprising controlling the temperature of the semiconductor element. 45. The method according to item 42 of the scope of patent application, further comprising detecting the temperature of the semiconductor element. 46. The method described in item 45 of the scope of patent application, further comprising controlling the temperature of the semiconductor element in response to the measured temperature. 47. — A method for supporting a substrate in a process reaction chamber and processing the substrate in the process reaction chamber, the method at least includes: The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)- ------------------- Order · (Please read the precautions on the back before filling this page) Line §16. The scope of patent application provides a building and a heating The collar; after heating the collar, the material; and the introduction of an exciting gas in the base of the guide support located on the support in the reaction chamber of the process 48. The method described in the scope of patent application 47 V, including the application of A voltage is applied to the collar to heat the collar. € 49. The party mentioned in item 47 of the scope of patent application reaches a temperature of at least about 80t. The method 'includes heating the shaft 50. The method as described in item 47 of the scope of the patent application, more ambient temperature. Including detecting the shaft 51. The method described in item 50 of the scope of patent application, when the temperature is set, the heating of the shaft ring is terminated. Including when arriving at a pre-1II1--I I --------- ^ --------- ^ I (Please read the precautions on the back before filling out this page) Staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by a consumer cooperative. 52. The square β 'as described in item 47 of the scope of patent application further includes a support substrate behind the building block, and heating the collar. 53 · According to the method described in item 52 of the scope of the patent application, during the processing, maintain the temperature of the collar to a temperature range that is more than a predetermined temperature in the substrate, page 37_ This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) 557532 AS B8 C8 D8 VI. Patent application scope 54. The method described in item 53 of the patent application scope, wherein the above temperature range is about 100 ° C to 3 50 ° C between. 55. A method of assembling a substrate support, the method includes at least: preparing an electrode; forming a dielectric layer, at least partially covering the electrode; forming a collar, at least partially surrounding the dielectric layer and the substrate Covered electrodes; and forming an electrical connector that is located within or in contact with the collar. 5 6. The method according to item 55 of the scope of patent application, further comprising providing a voltage supplier to make electrical contact with the electrical connector. (Please read the precautions on the back before filling in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 38 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)