TW569333B - Chemical mechanical planarization method end-of-polish optimization - Google Patents

Chemical mechanical planarization method end-of-polish optimization Download PDF

Info

Publication number: TW569333B
Authority: TW; Taiwan
Prior art keywords: wafer; polishing pad; pressure; patent application; polishing
Prior art date: 2001-08-31

Application number

TW91119565A

Other languages

English (en)

Chinese (zh)

Inventor

Andrew J Black

Original Assignee

Koninkl Philips Electronics Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-08-31

Filing date

2002-08-28

Publication date

2004-01-01

2002-08-28 Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv

2004-01-01 Application granted granted Critical

2004-01-01 Publication of TW569333B publication Critical patent/TW569333B/zh

Links

238000000034 method Methods 0.000 title claims abstract description 41
239000000126 substance Substances 0.000 title description 16
238000005457 optimization Methods 0.000 title description 2
238000005498 polishing Methods 0.000 claims abstract description 87
239000002002 slurry Substances 0.000 claims abstract description 20
239000004065 semiconductor Substances 0.000 claims abstract description 19
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
239000008367 deionised water Substances 0.000 claims abstract description 14
229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
239000007921 spray Substances 0.000 claims abstract description 9
230000007547 defect Effects 0.000 claims description 17
239000002253 acid Substances 0.000 claims description 9
238000004140 cleaning Methods 0.000 claims description 7
238000005507 spraying Methods 0.000 claims description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
229910021529 ammonia Inorganic materials 0.000 claims description 2
235000012431 wafers Nutrition 0.000 claims 17
239000007788 liquid Substances 0.000 claims 3
239000012085 test solution Substances 0.000 claims 3
239000000243 solution Substances 0.000 claims 2
239000004020 conductor Substances 0.000 claims 1
238000004519 manufacturing process Methods 0.000 claims 1
239000002245 particle Substances 0.000 abstract description 35
230000007935 neutral effect Effects 0.000 abstract 1
230000008569 process Effects 0.000 description 13
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
230000004888 barrier function Effects 0.000 description 6
239000000084 colloidal system Substances 0.000 description 5
239000000377 silicon dioxide Substances 0.000 description 4
235000012239 silicon dioxide Nutrition 0.000 description 4
238000002955 isolation Methods 0.000 description 3
239000000463 material Substances 0.000 description 3
239000000203 mixture Substances 0.000 description 3
230000009471 action Effects 0.000 description 2
239000002585 base Substances 0.000 description 2
239000013078 crystal Substances 0.000 description 2
230000001066 destructive effect Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000007517 polishing process Methods 0.000 description 2
238000005381 potential energy Methods 0.000 description 2
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
238000005411 Van der Waals force Methods 0.000 description 1
239000003082 abrasive agent Substances 0.000 description 1
239000003513 alkali Substances 0.000 description 1
235000011114 ammonium hydroxide Nutrition 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
239000013013 elastic material Substances 0.000 description 1
230000005684 electric field Effects 0.000 description 1
239000000835 fiber Substances 0.000 description 1
239000012530 fluid Substances 0.000 description 1
230000005484 gravity Effects 0.000 description 1
230000003993 interaction Effects 0.000 description 1
239000006193 liquid solution Substances 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
238000005406 washing Methods 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Landscapes

Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

TW91119565A 2001-08-31 2002-08-28 Chemical mechanical planarization method end-of-polish optimization TW569333B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US94446901A	2001-08-31	2001-08-31

Publications (1)

Publication Number	Publication Date
TW569333B true TW569333B (en)	2004-01-01

Family

ID=25481458

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW91119565A TW569333B (en)	2001-08-31	2002-08-28	Chemical mechanical planarization method end-of-polish optimization

Country Status (2)

Country	Link
TW (1)	TW569333B (fr)
WO (1)	WO2003018256A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2015081461A1 (fr) *	2013-12-02	2015-06-11	青岛理工大学	Dispositif de meulage à lubrification en quantité minimale capable de transporter de façon commandée un flux de jet de nanoparticules sous un champ électrique magnétiquement amélioré
CN109664162B (zh) *	2017-10-17	2020-02-07	长鑫存储技术有限公司	在金属栓塞的化学机械研磨中的制程动态优化方法及系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5897426A (en) *	1998-04-24	1999-04-27	Applied Materials, Inc.	Chemical mechanical polishing with multiple polishing pads
US6220934B1 (en) *	1998-07-23	2001-04-24	Micron Technology, Inc.	Method for controlling pH during planarization and cleaning of microelectronic substrates
TW434113B (en) *	1999-03-16	2001-05-16	Applied Materials Inc	Polishing apparatus

2002
- 2002-08-21 WO PCT/IB2002/003443 patent/WO2003018256A1/fr not_active Ceased
- 2002-08-28 TW TW91119565A patent/TW569333B/zh active

Also Published As

Publication number	Publication date
WO2003018256A1 (fr)	2003-03-06

Similar Documents

Publication	Publication Date	Title
US5320706A (en)	1994-06-14	Removing slurry residue from semiconductor wafer planarization
JP3004891B2 (ja)	2000-01-31	表面粗さを減少させるための半導体ウエハの粗研磨法
US5827781A (en)	1998-10-27	Planarization slurry including a dispersant and method of using same
US5896870A (en)	1999-04-27	Method of removing slurry particles
TW546724B (en)	2003-08-11	Method and apparatus for processing a semiconductor wafer using final polishing method
US5876508A (en)	1999-03-02	Method of cleaning slurry remnants after the completion of a chemical-mechanical polish process
TWI614801B (zh)	2018-02-11	晶圓的雙面拋光方法
JPH0871511A (ja)	1996-03-19	洗浄方法および装置
US7510974B2 (en)	2009-03-31	CMP process
TW569332B (en)	2004-01-01	Constant pH polish and scrub
US6585567B1 (en)	2003-07-01	Short CMP polish method
CN105364699B (zh)	2020-08-04	一种化学机械研磨方法和化学机械研磨设备
US6300246B1 (en)	2001-10-09	Method for chemical mechanical polishing of semiconductor wafer
TW569333B (en)	2004-01-01	Chemical mechanical planarization method end-of-polish optimization
TW483094B (en)	2002-04-11	Method to reduce micro-particle adsorption in semiconductor manufacturing process
JP6858763B2 (ja)	2021-04-14	多結晶仕上げを有する半導体ウエハを処理する方法
CN113500516A (zh)	2021-10-15	一种研磨装置的清洗方法及系统
US6875087B2 (en)	2005-04-05	Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece
CN103128649B (zh)	2016-08-03	能减少残余浆料的化学机械抛光方法
CN107369618B (zh)	2020-02-21	晶圆的平坦化方法
US12394628B2 (en)	2025-08-19	Methods for polishing semiconductor substrates
US20050113006A1 (en)	2005-05-26	Chemical mechanical polishing apparatus and method to minimize slurry accumulation and scratch excursions
KR100744221B1 (ko)	2007-07-30	화학적 기계적 연마장치와 이를 이용한 화학적 기계적연마공정
KR100687425B1 (ko)	2007-02-26	반도체 웨이퍼의 연마/세정장치 및 방법
KR100632049B1 (ko)	2006-10-04	스핀 린스 드라이장치