TW584973B - Reducing the variation of far-field radiation patterns of flipchip light emitting diodes - Google Patents

Reducing the variation of far-field radiation patterns of flipchip light emitting diodes Download PDF

Info

Publication number: TW584973B
Authority: TW; Taiwan
Prior art keywords: plane; raised; recessed; area; light
Prior art date: 2001-07-11

Application number

TW091115074A

Other languages

English (en)

Chinese (zh)

Inventor

Yu-Chen Shen

Daniel A Steigerwald

Original Assignee

Lumileds Lighting Llc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-07-11

Filing date

2002-07-08

Publication date

2004-04-21

2002-07-08 Application filed by Lumileds Lighting Llc filed Critical Lumileds Lighting Llc

2004-04-21 Application granted granted Critical

2004-04-21 Publication of TW584973B publication Critical patent/TW584973B/zh

Links

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Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

Led Devices (AREA)

TW091115074A 2001-07-11 2002-07-08 Reducing the variation of far-field radiation patterns of flipchip light emitting diodes TW584973B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US09/904,015 US6563142B2 (en)	2001-07-11	2001-07-11	Reducing the variation of far-field radiation patterns of flipchip light emitting diodes

Publications (1)

Publication Number	Publication Date
TW584973B true TW584973B (en)	2004-04-21

Family

ID=25418387

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW091115074A TW584973B (en)	2001-07-11	2002-07-08	Reducing the variation of far-field radiation patterns of flipchip light emitting diodes

Country Status (5)

Country	Link
US (1)	US6563142B2 (de)
EP (1)	EP1276158B8 (de)
JP (1)	JP4334826B2 (de)
DE (1)	DE60239310D1 (de)
TW (1)	TW584973B (de)

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US7071494B2 (en) *	2002-12-11	2006-07-04	Lumileds Lighting U.S. Llc	Light emitting device with enhanced optical scattering
JP4315760B2 (ja) *	2003-07-31	2009-08-19	株式会社沖データ	半導体発光装置、ｌｅｄヘッド、画像形成装置、及び半導体発光装置の製造方法
TWI244221B (en)	2004-03-01	2005-11-21	Epistar Corp	Micro-reflector containing flip-chip light emitting device
US20060204865A1 (en) *	2005-03-08	2006-09-14	Luminus Devices, Inc.	Patterned light-emitting devices
WO2007081719A2 (en)	2006-01-05	2007-07-19	Illumitex, Inc.	Separate optical device for directing light from an led
DE102007004302A1 (de) *	2006-09-29	2008-04-03	Osram Opto Semiconductors Gmbh	Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US8087960B2 (en)	2006-10-02	2012-01-03	Illumitex, Inc.	LED system and method
KR100809227B1 (ko) *	2006-10-27	2008-03-05	삼성전기주식회사	질화물 반도체 발광소자 및 제조 방법
US8110838B2 (en) *	2006-12-08	2012-02-07	Luminus Devices, Inc.	Spatial localization of light-generating portions in LEDs
US20080258130A1 (en) *	2007-04-23	2008-10-23	Bergmann Michael J	Beveled LED Chip with Transparent Substrate
JP2011512037A (ja)	2008-02-08	2011-04-14	イルミテックス，インコーポレイテッド	エミッタ層成形のためのシステムおよび方法
TW201034256A (en)	2008-12-11	2010-09-16	Illumitex Inc	Systems and methods for packaging light-emitting diode devices
US8585253B2 (en)	2009-08-20	2013-11-19	Illumitex, Inc.	System and method for color mixing lens array
US8449128B2 (en)	2009-08-20	2013-05-28	Illumitex, Inc.	System and method for a lens and phosphor layer
CN104241262B (zh)	2013-06-14	2020-11-06	惠州科锐半导体照明有限公司	发光装置以及显示装置
KR102630680B1 (ko) *	2019-05-02	2024-01-30	삼성전자주식회사	Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 패널

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JP2830591B2 (ja) *	1992-03-12	1998-12-02	日本電気株式会社	半導体光機能素子
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AU4355200A (en) *	1999-04-28	2000-11-10	Nova Crystals, Inc.	Led having embedded light reflectors to enhance led output efficiency
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US6376864B1 (en) *	1999-07-06	2002-04-23	Tien Yang Wang	Semiconductor light-emitting device and method for manufacturing the same
HK1048709A1 (zh) *	1999-12-03	2003-04-11	Cree, Inc.	透过使用内置及外置光元件提高发光二极管(led)中的抽光效果

2001
- 2001-07-11 US US09/904,015 patent/US6563142B2/en not_active Expired - Lifetime
2002
- 2002-06-24 DE DE60239310T patent/DE60239310D1/de not_active Expired - Lifetime
- 2002-06-24 EP EP02077498A patent/EP1276158B8/de not_active Expired - Lifetime
- 2002-07-08 TW TW091115074A patent/TW584973B/zh not_active IP Right Cessation
- 2002-07-11 JP JP2002202293A patent/JP4334826B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE60239310D1 (de)	2011-04-14
EP1276158B8 (de)	2011-04-13
EP1276158A2 (de)	2003-01-15
JP4334826B2 (ja)	2009-09-30
JP2003046123A (ja)	2003-02-14
EP1276158B1 (de)	2011-03-02
US6563142B2 (en)	2003-05-13
EP1276158A3 (de)	2008-10-29
US20030010991A1 (en)	2003-01-16

Legal Events

Date	Code	Title	Description
2022-08-21	MK4A	Expiration of patent term of an invention patent

Publication	Publication Date	Title
TW584973B (en)	2004-04-21	Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
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