TW593683B - Apparatuses containing multiple force generating elements and uses thereof - Google Patents
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- TW593683B TW593683B TW90124529A TW90124529A TW593683B TW 593683 B TW593683 B TW 593683B TW 90124529 A TW90124529 A TW 90124529A TW 90124529 A TW90124529 A TW 90124529A TW 593683 B TW593683 B TW 593683B
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Abstract
Description
593683 A7 B7 五、發明説明(i ) 技術領域593683 A7 B7 V. Description of the Invention (i) Technical Field
本發明所涉及的是在晶片上進行實體分子或分子操作這 一領域。具體的說,這個發明提供了 一種能產生物理場的 晶片,該晶片包含:a)—個基底;b)至少兩種構建在該基 底上的不同的内建結構,其中任何一種這樣的該結構都可 以與外部能源組合以產生一定類型的物理場。上面提及的 物理場具有以下特點:當一個具有一性質的實體分子進入 場中,場對實體分子作用的形式表現為施加在實體分子上 的某種力。物理場可以包括電場、磁場、聲場、光場、速 度場和其他形式的場。組合方式、裝置(可以包括單個或 多個晶片)和用以在晶片或裝置上操作實體分子或分子的 方法也同時在這份文件中提出。 先前技藝The present invention relates to the field of performing solid molecules or molecular manipulations on a wafer. Specifically, the invention provides a wafer capable of generating a physical field, the wafer comprising: a) a substrate; b) at least two different built-in structures built on the substrate, any of which is such a structure Both can be combined with external energy sources to generate certain types of physics. The physical field mentioned above has the following characteristics: When a solid molecule with a property enters the field, the form of the field acting on the solid molecule appears as a certain force exerted on the solid molecule. Physical fields can include electric, magnetic, acoustic, light, velocity, and other forms of fields. Combinations, devices (which can include single or multiple wafers), and methods to manipulate physical molecules or molecules on a wafer or device are also presented in this document. Prior art
生物晶片通常分為兩類。弟一類生物晶片’即被動式晶 片,這種晶片並不使用外加的物理力以操作、控制或影響 化學、生物化學或生物學反應過程中的分子或微粒。該反 應過程涉及分子/微粒的熱擴散與自然產生的力,如微粒 所受的重力和具有磁性的微粒所受的地磁場力。第二類生 物晶片,即主動式晶片,這種晶片使用外加的物理力以促 進、增強或加速所期望的生物化學反應或過程,同時減小 或降低非期望的效應。典型的被動式晶片的例子是DNA 晶片或 DN A 陣列(可參考 Lockhart D.J. and Winzeler Ε·Α·, Nature,Vol.405,Νο·6788,Pages827-836),晶片上固定的寡聚 核 酸探針或cDNA分子和覆蓋在晶片上的溶液中的靶分 _^_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 _B7___ 五、發明説明(2 ) 子的雜交反應只有當靶分子擴散到和探針分子接觸的時候 才可能發生。相對應的是,典型的主動式晶片的例子是電 子晶片(如美國專利 6,017,696 號“ Methods for electronic stringency control f〇r molecular biological analysis and diagnostics 和 6,051,380 號“ Methods and procedures for molecular biological analysis and diagnostics” 所揭示)。在這 些電子晶片上,帶電的DNA(或其他)分子都透過直接電 泳的方式或是被吸引到具有相反極性的電極上,在這個電 極上已經固定有相應的探針分子。 雖然上述是處理DN A分子的例子,利用生物晶片處理 其他分子或分子複合物或生物微粒(如:細胞,細菌,病 毒’蛋白質,核酸分子等)同樣也可以分為主動式晶片或 被動式晶片之兩類。此外,除了上述的分子雜交,晶片上 的生物化學反應或過程還包括許多其他的步驟,如分子/ 微粒的輸運,分子/微粒的分離,分子/微粒的鑑別,分子-分子交互作用和分子-微粒的交互作用等等。比如,在介 電電泳晶片上從正常細胞中分離癌症細胞是一種利用主動 式晶片的生物化學處理過程。與被動式晶片相比,主動式 晶片的優勢在於反應的迅速,具有潛在的較高的檢測靈敏 度’可以對低濃度的分子或微粒或生物微粒進行分析或化 驗’具有潛在的對不同類型的分子或不同類型的微粒/生 物微粒較高的鑑別率。 為為貫現特定目的而使用複合力的工作已經有了報導。 例如’ Yasuda等報道了在駐波與直流電場中對其中的微 • 5 -__ __ 本紙張尺度適用中國國家榡準(CNS) A4規格(21〇 X 297公釐) 593683 A7 B7 五、發明説明(3 ) 粒施加競爭性的靜電力或聲場輻射力,從而實現在流體池 晨對具有不同大小和電荷的聚苯乙缔微粒和銘珠的分離 (Yasuda 等,J· Acoust. Soc. Am,99(4): 1965-1970(1996); Yasuda 等·,Jpn. J. Appl. Phys·,35(1):3295-3299,(1996)) ° 在這 個例子中,四根鉑導線用以產生一個均勻的直流電場從而 將靜電力施加在帶電微粒上。兩個壓電轉換器分開一定的 距離安置,以產生駐波。由於只涉及到了駐波和均勻的直 流電場,這樣的系統的應用僅僅限於微粒操作和分離,並 只能應用於有限的幾種微粒類型。操作方法和過程都不很 靈活。該系統只能以有限的方式操作微粒。這樣的系統不 能用於多用途的微粒操作和處理,例如分離微粒以獲取’· 純化”成分。 在其他的報道中,光場輻射力被用以在旋轉的電場中定 位微粒(De Gasperis 等,Meas· Sci. Technol.,9:518-529 (1998))。在這個例子中,由一個光源和一光學電路(包括透 鏡和其他成分)組成的“光鉗”(optical tweezers)專門用於 在旋轉電场中定位微粒或是細胞。在電旋轉晶片上產生的 電旋轉電場是用以誘導微粒旋轉的。這樣的系統的應用範 圍是有限的。這個系統中,微粒的旋轉是用於特徵化微粒 的性質,而不是用於操作微粒或細胞。光場輕射力用以專 門控制微粒的位置。這個系統僅僅可以用於特徵化微粒的 介電性質。為了能用電旋轉的方法得到可靠的微粒性質參 數,粒子應該固定於旋轉電場的某一位置從而受固定的旋 _-6- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明(4 ) 轉場力量。這個系統不能用於其他的用途,如將微粒分離 成不同的成分。 最近又有報道說,為實現同時定位兩個微粒,研究者用 光場輻射力來控制其中一個微粒,而同時利用介電電泳籠 固定另一個微粒(G. Fuhr and C· Reichle,in van den Berg 等· (Ed.),Micro Total Analysis Systems, 2000, 261-264; and T. Schnelle et al·,Appl. Phys·,B Lasers and Optics 70:267-271 (2000))。光場輻射力的作用是透過由光源和光學電路(由透 鏡及其它成分組成)形成的“光鉗”來施加的。介電電泳 籠是在介電電泳晶片上由微電極元件的三維結構產生的。 這樣的系統的使用範圍是有限的。它不能用於其他目的的 操作,如在晶片上輸運微粒。 本發明考慮到了先前所設計的晶片或生物晶片的局限 性。本發明的目的之一就是提供一類新的晶片和使用這類 晶片進行生物化學、生物學或化學反應,操作、化驗和合 成的方法。本發明的另一個目的就是提供一種主動式晶 片,尤其是可以普遍適用於各種晶片應用領域的主動式生 物晶片,相應的生物學、化學、生物化學反應和過程可以 透過微流體處理和對微流體裝置和系統中的分子和微粒的 操作以實現。本發明還有一個目的,即提供一種普遍適用 的主動式晶片,可以獨特地應用於所謂的縮微晶片實驗室 系統(把許多單獨的生物化學、生物學和化學功能整合到 一片單獨的晶片或多晶片複合體上實現)。 發明揭示 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明(5 ) 這個發明所涉及的是在晶片上進行實體分子或分子操作 這一領域。一方面,這個發明提供了 一種能產生物理場的 晶片,該晶片包含:a)—個基底;b)至少兩種構建在該基 底上的不同結構,其中任何一種這樣的内建結構都可以與 外部能源組合,以產生一類型的物理場。 在一個具體實施例中,晶片上的内建結構至少能夠產生 兩種不同類型的物理場。晶片可以含有數塊結構上相連的 基底,也可以包含有二、三、四或更多種不同類型的内建 結構,從而能夠產生出二、三、四或更多種不同類型的物 理場。 在一個具體實施例中,晶片上内建的結構是以單個單元 的形式存在的。這樣的單個單元可以佔有晶片的一部分, 也可以是全部。在一個具體實施例冲,晶片上内建的結構 由一組微單元構成。一部分或是全部這樣的微單元是可以 單獨控制的。晶片上一部分或是全部這樣的微單元是相互 連接的。該晶片進一步包含能夠選擇性的對任意一個這樣 的微單元施加能量的裝置。 在一個具體實施例中,晶片上内建的結構應能產生至少 兩類不同的物理場,這兩類物理場可以從電場、磁場、聲 場、光場和速度場中任意選擇。在一個具體實施例中,晶 片上内建的結構應能產生至少兩類不同的物理場,這兩類 物理場可以從磁場、聲場、光場和速度場中任意選擇。在 一個具體實施例中,晶片上内建的結構應能產生至少兩類 不同的物理場,這兩類物理場可以從電場、聲場、光場和 __-8^___ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明(6 )Biochips are generally divided into two categories. One type of biological wafer is a passive wafer, which does not use external physical forces to manipulate, control, or influence molecules or particles in a chemical, biochemical, or biological reaction process. This reaction process involves the thermal diffusion of molecules / particles and naturally occurring forces, such as the gravity on the particles and the geomagnetic force on the magnetic particles. The second type of biological wafer, the active wafer, uses external physical forces to promote, enhance, or accelerate the desired biochemical reaction or process, while reducing or reducing undesired effects. Examples of typical passive wafers are DNA wafers or DNA arrays (see Lockhart DJ and Winzeler EA, Nature, Vol. 405, No. 6788, Pages 827-836), oligo nucleic acid probes immobilized on the wafer, or cDNA molecules and targets in the solution covered on the wafer _ ^ _ This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 593683 A7 _B7___ 5. Description of the invention (2) The hybridization reaction of This can happen when the target molecule diffuses into contact with the probe molecule. Correspondingly, examples of typical active wafers are electronic wafers (eg, US Patent No. 6,017,696 "Methods for electronic stringency control f? R molecular biological analysis and diagnostics" and 6,051,380 "Methods and procedures for molecular biological analysis and diagnostics" (Revelation). On these electronic wafers, the charged DNA (or other) molecules are either directly electrophoresed or attracted to an electrode of opposite polarity, and the corresponding probe molecules have been fixed on this electrode. Although the above It is an example of processing DNA molecules. The use of biochips to process other molecules or molecular complexes or biological particles (such as cells, bacteria, viral 'proteins, nucleic acid molecules, etc.) can also be divided into two types: active wafers or passive wafers. In addition to the above-mentioned molecular hybridization, the biochemical reaction or process on the wafer also includes many other steps, such as molecular / particle transport, molecular / particle separation, molecular / particle identification, molecular-molecular interaction, and Molecular-particle interaction Etc. For example, separating cancer cells from normal cells on a dielectrophoresis wafer is a biochemical process using active wafers. Compared with passive wafers, active wafers have the advantage of rapid response and potential Higher detection sensitivity 'can analyze or test low concentrations of molecules or microparticles or biological microparticles' has the potential to have a higher discrimination rate for different types of molecules or different types of microparticles / biological microparticles. To achieve a specific purpose The use of composite forces has been reported. For example, 'Yasuda et al. Reported the micro-wave in standing wave and DC electric field. • 5 -__ __ This paper size is applicable to China National Standard (CNS) A4 specification (21〇X 297 mm) 593683 A7 B7 V. Description of the invention (3) Particles apply competitive electrostatic force or sound field radiation force, so as to separate polystyrene particles and inscription beads with different sizes and charges in the morning of the fluid pool (Yasuda et al., J. Acoust. Soc. Am, 99 (4): 1965-1970 (1996); Yasuda et al., Jpn. J. Appl. Phys., 35 (1): 3295-3299, (1996)) ° in this example Four platinum wires are used to generate a uniform DC electric field to apply electrostatic force to the charged particles. Two piezoelectric transducers are placed a certain distance apart to generate standing waves. Because only standing waves and uniform DC current are involved Field, the application of such a system is limited to particle manipulation and separation, and can only be applied to a limited number of particle types. The methods and procedures are not very flexible. This system can only handle particles in a limited way. Such systems cannot be used for multi-purpose particle manipulation and processing, such as separating particles to obtain '· purified' components. In other reports, the radiative force of a light field is used to locate particles in a rotating electric field (De Gasperis et al., Meas · Sci. Technol., 9: 518-529 (1998)). In this example, "optical tweezers" consisting of a light source and an optical circuit (including lenses and other components) are specifically used in Locate particles or cells in a rotating electric field. The electric rotating electric field generated on an electro-rotating wafer is used to induce the rotation of particles. The application range of such a system is limited. In this system, the rotation of particles is used to characterize The nature of the particles is not used to manipulate the particles or cells. The light field force is used to specifically control the position of the particles. This system can only be used to characterize the dielectric properties of the particles. In order to be reliable by electrorotation Particle property parameters, the particles should be fixed at a certain position of the rotating electric field and thus subject to a fixed spin_-6- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 593683 A7 B7 V. Description of the invention (4) Transition force. This system cannot be used for other purposes, such as separating particles into different components. Recently, it has been reported that in order to achieve the simultaneous positioning of two particles, Researchers use light field radiating force to control one particle while using a dielectric electrophoresis cage to fix the other particle (G. Fuhr and C. Reichle, in van den Berg et al. (Ed.), Micro Total Analysis Systems, 2000 , 261-264; and T. Schnelle et al ·, Appl. Phys ·, B Lasers and Optics 70: 267-271 (2000)). The radiative force of the light field is transmitted by the light source and the optical circuit (by the lens and other The composition is composed of "optical clamps" to be applied. Dielectrophoretic cages are produced from the three-dimensional structure of microelectrode elements on a dielectrophoresis wafer. The use of such a system is limited. It cannot be used for other purposes Operations such as transporting particles on a wafer. The present invention takes into account the limitations of previously designed wafers or biochips. One of the objects of the present invention is to provide a new type of wafer and use such wafers for Biochemical, biological or chemical reaction, method of operation, assay and synthesis. Another object of the present invention is to provide an active wafer, especially an active biochip that can be universally applied to various wafer application fields, and the corresponding biology , Chemical, biochemical reactions and processes can be achieved through microfluidic processing and manipulation of molecules and particles in microfluidic devices and systems. Another object of the present invention is to provide a universally applicable active wafer that can uniquely Applied to so-called microchip laboratory systems (integrating many individual biochemical, biological and chemical functions on a single wafer or multi-wafer complex). DISCLOSURE OF THE INVENTION The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 593683 A7 B7 5. Description of the invention (5) This invention relates to the field of performing physical molecules or molecular operations on wafers. In one aspect, this invention provides a wafer capable of generating a physical field, the wafer comprising: a) a substrate; b) at least two different structures built on the substrate, any of which can be integrated with the built-in structure External energy is combined to produce a type of physics. In a specific embodiment, the built-in structure on the wafer is capable of generating at least two different types of physics. The chip can contain several structurally connected substrates, or it can contain two, three, four or more different types of built-in structures, which can produce two, three, four or more different types of physical fields. In a specific embodiment, the built-in structure on the wafer exists as a single unit. Such a single unit may occupy a part or all of the wafer. In a specific embodiment, the structure built on the wafer is composed of a set of micro-units. Some or all of these microcells can be controlled individually. Some or all of these microcells on the chip are interconnected. The wafer further includes a device capable of selectively applying energy to any one of these microcells. In a specific embodiment, the structure built on the wafer should be able to generate at least two different types of physics fields. These two types of physics fields can be arbitrarily selected from electric, magnetic, acoustic, light, and velocity fields. In a specific embodiment, the built-in structure on the wafer should be able to generate at least two different types of physics fields. These two types of physics fields can be arbitrarily selected from magnetic fields, sound fields, light fields, and velocity fields. In a specific embodiment, the built-in structure on the wafer should be able to generate at least two different types of physics fields. These two types of physics fields can be from electric field, sound field, light field and __- 8 ^ ___ This paper scale is applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) 593683 A7 B7 V. Description of Invention (6)
速度場中任意選擇。在一個具體實施例中,晶片上内建的 結構應能產生至少兩類不同的物理場,這兩類物理場可以 從電場、磁場、光場和速度場中任意選擇。在一個具體實 施例中,晶片上内建的結構應能,生至少兩類不同的物理 場,這兩類物理場可以從電場、磁場、聲場和速度場中任 意選擇。在一個具體實施例中,晶片上内建的結構應能產 生至少兩類不同的物理場,這兩類物理場可以從電場、磁 場、聲場和光場中任意選擇。在另一個具體實施例中,晶 片上内建的結構應能產生至少兩類不同的物理場(不包括 光學輻射場和不均勻的交流電場的組合)。在另一個具體 實施例中,晶片上内建的結構單元應能產生至少兩類不同 的物理場(不包括駐波場和‘均勻的靜電場的組合)。在另一 個具體實施例中,晶片上内建的結構應能產生物理場(不 包括電場和速度場的組合)。Arbitrary selection in the speed field. In a specific embodiment, the built-in structure on the wafer should be able to generate at least two different types of physics fields. These two types of physics fields can be arbitrarily selected from electric, magnetic, light and velocity fields. In a specific embodiment, the built-in structure on the wafer should be able to generate at least two different types of physics fields. These two types of physics fields can be selected from electric, magnetic, acoustic and velocity fields. In a specific embodiment, the built-in structure on the wafer should be able to generate at least two different types of physical fields, and these two types of physical fields can be arbitrarily selected from electric, magnetic, acoustic, and optical fields. In another specific embodiment, the built-in structure on the wafer should be able to generate at least two different types of physical fields (excluding the combination of optical radiation fields and uneven AC electric fields). In another specific embodiment, the built-in structural unit on the wafer should be able to generate at least two different types of physical fields (excluding the combination of standing wave fields and 'uniform electrostatic fields'). In another embodiment, the built-in structure on the wafer should be able to generate a physical field (excluding the combination of electric and velocity fields).
在一個具體實施例中,至少有一個晶片上内建的結構可 以產生一種電場,如均勻或非均勻的直流電場、場強分佈 不均勾或是至少一個場分量相位分佈不均勻的非均勻交流 電場。在一個例子中,晶片上能產生電場的内建的結構包 含至少一個微單元。 在另一個具體實施例中,至少有一個晶片上内建的結構 可以產生磁場。在一個例子中,晶片上能產生磁場的内建 結構包含一種鐵磁材料。在另一個例子中,晶片上能產生 磁場的内建結構包含一個微電磁單元。 _-9- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683In a specific embodiment, at least one of the built-in structures on the wafer can generate an electric field, such as a uniform or non-uniform DC electric field, an uneven field strength distribution, or a non-uniform AC with at least one field component having an uneven phase distribution. electric field. In one example, the built-in structure on the wafer that generates an electric field contains at least one microcell. In another embodiment, at least one structure built into the wafer can generate a magnetic field. In one example, the built-in structure on the wafer that generates a magnetic field contains a ferromagnetic material. In another example, a magnetic field built-in structure on a wafer contains a micro-electromagnetic unit. _-9- This paper size applies to China National Standard (CNS) A4 (210X297 mm) 593683
在另-個具體實施例中,至少有—個晶片上内建的結構 可以產生聲場。在_個例子中,晶片上的能產生聲場的内 建結構包含一種壓電材料。 在另-個具體實施例中,至少有—個晶片上内建的結構 可以產生速度場。在_個例子中,晶片上的能產生速度場 的内建結構至少包含一個微加工的細端頭/毛細管。在一 個例子中,晶片上能產生速度場的内建結構包含一組加熱 和/或冷卻單元陣列。 孩加熱和/或冷卻單元陣列可在位於該陣列附近的媒體 中產生熱梯度。在另一個具體實施例中,至少有一個晶片 上内建的結構可以產生光場。在一個例子中,晶片上的能 產生光場的内建結構包含一個微加工的光學透鏡陣列。在 另個例子中,晶片上能產生光場的内建結構包含一個微 加工的電-光源陣列。在另一個例子中,晶片上能產生光 場的内建結構包含一個雷射光鉗。 内建在晶片上的結構可以是微型結構。微型結構中的基 本結構元件的特徵尺寸在0 · i微米至2 〇毫米之間。晶片 的基底可以包含多種類型的表面,如矽、二氧化矽、氮化 矽、塑膠、玻璃、陶瓷、橡膠和聚合體表面。對於不同的 應用需要’晶片基底可以是疏水,也可以是親水的。 另一方面,這個發明提供了一種可以產生物理場的晶 片。晶片主要的組成:a)—個基底;b)至少兩種構建在該 基底上的不同的内建結構,其中任何一種這樣的内建結構 都可以與外部能源組合以產生一類型的物理場。 ____-10- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂In another embodiment, at least one structure built into the wafer can generate a sound field. In one example, the built-in structure on the wafer that generates a sound field contains a piezoelectric material. In another embodiment, at least one structure built into the wafer can generate a velocity field. In one example, the built-in structure on the wafer that generates the velocity field contains at least one micromachined tip / capillary. In one example, the built-in structure on the wafer that generates a velocity field contains an array of heating and / or cooling cells. An array of heating and / or cooling units can create a thermal gradient in a medium located near the array. In another embodiment, at least one structure built into the wafer can generate a light field. In one example, the built-in structure on the wafer that generates the light field contains a micromachined array of optical lenses. In another example, a built-in structure on a wafer that generates a light field contains a micromachined electro-light source array. In another example, the built-in structure on the wafer that generates a light field includes a laser clamp. The structure built on the wafer may be a micro structure. The characteristic dimensions of the basic structural elements in the microstructure are between 0 · i microns and 20 mm. The substrate of a wafer can contain many types of surfaces, such as silicon, silicon dioxide, silicon nitride, plastic, glass, ceramic, rubber, and polymer surfaces. For different application needs, the wafer substrate can be either hydrophobic or hydrophilic. On the other hand, this invention provides a wafer which can generate a physical field. The main components of the chip are: a) a substrate; b) at least two different built-in structures built on the substrate, any of which can be combined with external energy to generate a type of physics. ____- 10- This paper size applies to China National Standard (CNS) A4 (210X297 mm) binding
B7五、發明説明( 8 ) 另一方面,這個發明提供了—種可以產生物理場的晶 片。該晶片主要的組成:a)_個基底;b)至少兩種構建: 該基底上的不同的内建結構,其中任何—種這樣的内建处 構都可以與外部能源組合,以產生一類型的物理場。° 再一方面,這個發明涉及到這樣一種組合,其中結人包 含:a)至少兩類晶片包含-個基底和至少兩種構建在該基 底上的不同的内建結構,其中任何-種這樣的内建結構都 可以與外部能源組合以產生一類型的物理場;㈧在該晶片 之間輸運被操作實體分子的方法。 ^ 一方面,這個發明涉及到一種裝置,其中裝置包含一 塊印片,孩晶片包括一個基底和至少兩種構建在該基底上 的不同的内建結構,其中任何—種這樣的㈣結構都可以 與外部能源組合以產生一定類型的物理場。 另:方面,這個發明提供了 一種用以操作實體分子的裝 置居裝置包括·昀用以容納或支撐待操作實體分子的基 底,b)至少兩種類型該裝置内部的結構,其中每個内部結 構$可以和外與外部能源組合,產生一種類型的物理力在 居只把刀子上。泫裝置之内部結構應該能產生至少兩種不 同的物理力於待操縱的實體分子上。裝置可以包括二、 =、四或更多類型的内部結構,而且可以於待操縱的實體 刀子產生一、二、四或更多類型的物理力。在一個具體實 施例中,内部結構就是構建在該基底上的内建結構。在另 一個具體實施例中,内部結構並不位於基底上。裝置可包 含多個結構上相互連接的基底。 ^紙張尺度適用中國國家標準(CNS) M規格(2ΐ〇χ撕公爱)1--- 五 、發明説明( 在—個具體實施例中’裝置的内部結構是以單個… 。存在的。這樣的單個單元可以佔有晶片的二 含在另一個具體實掩例中,裝置的内部結構包 控二ΓΤΓ:邵分或f全部這樣的微單元是可以單個 的、"日上一部分或是全部這樣的微單元是相互連接 加能源的構件。 “壬--個-樣的微單元施 在-個具體實施例t,裝置的㈣結構應 ::同:物理力’這些物理力可以從電場力、磁場力:: 、機械力和光場輻射力中任意選擇 :例:此:置的内部結構應能產生至少兩類不:的:: 構岸另一個具體實施例中,裝置的内部結 力1生至少兩類不同的物理力,這些物理力可以從電 :二:場二機械力和光場輕射力中任意選擇。在另-=物=她例中’裝置的内部結構應能產生至少兩類不同 *力,这些物理力可以從電場力'磁場力、機;^力釦 :場輕射力中任意選擇。在另一個具體實施例中機= 以:二構:能屋生至少兩類不同的物理力’這些物理力可 $ #力、磁%力、聲場力和光場#射力中任意選擇。 ^:個具體實施例中,裝置的内部結構應能產生 =同的物理力’這些物理力可以從電場力、磁場力、聲 二中任意選擇。在另—個具體實施例中,該内 〜構應&產生至少兩類不同的物理力(不包括光場輕射 本紙張尺度適财s g家標準公爱) -12- 593683 A7 _______ B7 五、發明説\ --- 10 ; 力和傳統介電電泳力的組合)。在另一個具體實施例中, 孩内部結構應能產生至少兩類不同的物理力(不包括聲場 力和靜電力的組合)。在另一具體實施例中,該内部結構 能產生至少兩類不同的物理力(不包括機械力和電力之組 合)。 在一個具體實施例中,至少有一個裝置上的内部結構可 以產生一種電力。在一個例子中,至少有一個内部結構可 以對W黾微粒產生靜電力。在另一個例子中,至少有一内 部結構可以產生傳統的介電電泳力。在另一個例子中,至 少一個内部結構可以產生行波介電電泳力。裝置能產生電 場的内部結構至少包含一個微電極元件。 在另一個具體實施例中,至少有一個裝置的内部結構可 以產生磁場力。在一個例子中,裝置能產生磁場的内部辞 構包含一種鐵磁材料。在另一個例子中,能產生磁場的内 部結構包含一個微電磁單元。 在另一個具體實施例中,至少有一個裝置的内部結構可 以產生聲場力。在一個例子中,裝置能產生聲場的的内部 結構包含一種壓電材料。 在另一個具體實施例中,至少有一個裝置的内部結構可 以產生機械力。在一個例子中,裝置能產生機械力的内部 結構至少包含一個微加工的細端頭/毛細管。在另一個例 子中’裝置能產生機械力的内部結構包含一組加熱和/或 冷卻單元陣列。該加熱和/或冷卻單元陣列能產生熱梯度B7 V. Description of the invention (8) On the other hand, this invention provides a wafer that can generate a physical field. The main components of the chip are: a) a base; b) at least two kinds of constructions: different built-in structures on the base, any of which can be combined with external energy to generate a type Physics. ° In yet another aspect, this invention relates to a combination in which the knot contains: a) at least two types of wafers include a substrate and at least two different built-in structures built on the substrate, any of which Both built-in structures can be combined with external energy to generate a type of physics; 的 a method of transporting manipulated physical molecules between the wafers. ^ In one aspect, the invention relates to a device, wherein the device includes a printed sheet, the chip includes a substrate and at least two different built-in structures built on the substrate, any of which can be combined with External energy is combined to produce a certain type of physics. In another aspect, this invention provides a device for operating entity molecules. The device includes a base for receiving or supporting the entity molecules to be operated, b) at least two types of structures inside the device, each of which $ Can be combined with external and external energy sources to generate a type of physical force on the home-only knife. The internal structure of the tritium device should be able to generate at least two different physical forces on the physical molecules to be manipulated. The device may include two, four, four or more types of internal structures, and may generate one, two, four or more types of physical forces on the physical knife to be manipulated. In a specific embodiment, the internal structure is a built-in structure built on the substrate. In another embodiment, the internal structure is not located on the substrate. The device may include multiple structurally interconnected substrates. ^ The paper size applies the Chinese National Standard (CNS) M specification (2 × 0χ tear public love) 1-5. Description of the invention (in a specific embodiment, 'the internal structure of the device is a single .... Exist. A single unit can occupy the chip of the chip. In another concrete example, the internal structure of the device includes two ΓΓΓ: Shaofen or f. All such microunits can be single, " a part of the day or all of them The micro-units are the components that are connected to the energy source. "The micro-units are applied to a specific embodiment. The structure of the device should be: the same as: physical forces. These physical forces can be derived from electric field forces, Magnetic force::, mechanical force, and light field radiation force are optional: for example: this: the internal structure of the device should be able to produce at least two types of not:: In another specific embodiment of the shore, the internal force of the device is 1 There are at least two different types of physical forces. These physical forces can be arbitrarily selected from electric: two: field two mechanical forces and light field light shooting forces. In the other-= thing = her example, the internal structure of the device should be able to generate at least two types Unlike the * force, these physical forces can vary from the electric field Force 'magnetic field force, machine; ^ force buckle: field light shooting force to choose arbitrarily. In another specific embodiment machine = to: two structure: can produce at least two different types of physical forces' these physical forces can be $ # Force, magnetic% force, sound field force, and light field #radio force are arbitrarily selected. ^: In a specific embodiment, the internal structure of the device should be able to generate the same physical force. These physical forces can be determined from electric field force, magnetic field force, Any choice in the sound two. In another specific embodiment, the internal structure & generates at least two different types of physical forces (excluding light field light shot on the paper scale suitable financial standards sg family standard public love) -12 -593683 A7 _______ B7 V. Invention \ --- 10; combination of force and traditional dielectrophoretic force). In another specific embodiment, the internal structure of the child should be able to generate at least two different types of physical forces (excluding A combination of sound field force and electrostatic force). In another specific embodiment, the internal structure can generate at least two different types of physical forces (excluding the combination of mechanical force and electric power). In a specific embodiment, at least The internal structure on a device can produce a Force. In one example, at least one internal structure can generate electrostatic force on W 黾 particles. In another example, at least one internal structure can generate traditional dielectrophoretic force. In another example, at least one internal structure A traveling wave dielectric electrophoretic force can be generated. The internal structure of the device capable of generating an electric field contains at least one microelectrode element. In another specific embodiment, at least one of the internal structures of the device can generate a magnetic field force. In one example, the device can The internal lexicon that generates the magnetic field contains a ferromagnetic material. In another example, the internal structure that generates the magnetic field includes a micro-electromagnetic unit. In another specific embodiment, the internal structure of at least one device can generate a sound field force In one example, the internal structure of the device that produces a sound field contains a piezoelectric material. In another embodiment, the internal structure of at least one device can generate mechanical force. In one example, the internal structure of the device capable of generating mechanical force contains at least one micro-machined fine tip / capillary. In another example, the internal structure of the ' device that generates mechanical force includes an array of heating and / or cooling units. The heating and / or cooling unit array is capable of generating a thermal gradient
___________-13: 本纸張尺度適用中國國家標準(CNS) A4規格(21〇x297公釐) 11593683 A7 B7 五、發明説明( 體中之速度 0 内部結構可 能產生光場 在另一個例 個微加工的 光場的内部 及位於Ό車列附件的媒體中產生速度場。該媒 場可對位於該媒體中的實體分子施加-機械力 、在另-個具體實施例中,至少有—個裝置的 以產生光場II射力。在—個例子中,裝置上的 的内部結構包含-個微加工的光學透鏡陣列。 子中裝置上的能產生光場的内部結構包含一 私-光源陣列。在另_個例子中,裝置能產生 結構包含一個雷射光鉗。 裝f上的内部結構可以是微型結構。微型結構中的基本 結構早7C的特徵尺寸在G1微米至2G亳米之間。裝置中 之基底可以包含多種類型的表面,如碎、二氧化[氮化 矽塑膠、玻璃、陶變、橡膠和聚合體表面。對於不同的 應用需要,基底表面可以是疏水,也可以是親水的。 該裝置進-步包括—個包含—塊基底和_個用以容納或 支持或包含待操作實體分子的滞留腔的流體池。裝置上的 内部…構可以對待操作實體分子施加至少兩種類型的物理 力這種内部、,構可以位於基底上,也可以不位於基底 上。流體池可以是一個包含至少一個進口埠和至卜個出 口埠的封閉腔體結構。 在-個具體實施例中’裝置並不包括—個監視或是 裝置。 在另方面本發明提供了一種可以用以操作實體分子 的裝置’裝置王要包括:a) _塊用於容納或支撐待操縱實 體分子的基辰;b)至少兩類内部結構,每個該内部結構都 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公袭·) -14- 12 五、發明説明( 可以和外加信號源組合,產生—種類型的物理力於該實體 分子上。 在另方面it個發明提供了 一種可以用以操作實體分 2裝置’裝置王要包括:Μ ~塊用於容納或支撐待操縱 貫月豆分子的基底;b)至少兩類内部結構,每個該内部結構 都可以和外加# *源組合,i纟一種類型的物理力於 體分子上。 ' $ 再一方面,這個發明涉及到這樣一種結合的形式,其中 結合包含· &)至少兩類裝置包含_個用以容納或支撐待操 作的實體分子的基底和至少兩種構建在該基底上的内部結 $ ’其中任何-種這樣的内部結構都可以與外部信號源组 口,以產生一種類型的物理力於該實體分子上;㈧在裝置 之間輸運被操作實體分子的方法。 另一方面,這個發明涉及到—種操縱實體分子之方法, 該方法包括:a)在晶片上(包含—塊基底和位於該基底上 至少,類不同類型的内建結構)引入待操作的實體分子, 其中每-種這樣的内建結構都可以與外部信號源組合,以 產生-種類型的物理場;b)將該晶片的這些内建結構虚外 加信號源組合,從而在實體分子上施加至少兩類不同的物 理力,以實現對實體分子的操作。 另一方面,這個發明涉及到一種操縱實體分子之方法, 該:法:括:a)在裝置上(包含—塊容納和支撑該待操縱 (基底和位於該裝置内部至少兩類不同㈣的結構)引入 待操作的實體分子,其巾任何—料樣的_結構 本紙很尺度通财國g家標準(CNS) A4規格(21() χ挪公爱 1 15- 593683 A7 B7 五、發明説明(13 ) 與外部信號源組合,以產生一種類型的物理場;b )將該裝 置的這些内部結構與外加信號源組合,從而在該實體分子 上施加至少兩類不同的物理力,以實現對實體分子的操 作。 在一個具體實施例中,操作實體分子的方法利用了至少 兩種不同類型、分別先後施加於其上的物理力。在另一個 具體實施例中,操作實體分子的方法利用了至少兩種不同 類型、同時施加於其上的物理力。 在一些具體實施例中,透過上述的操作方法,多個實體 分子可以被同時操作。例如,透過對實體分子施加超過一 種物理力,以使得至少兩個不同的實體分子被不同類型的 物理力所操作,這樣以實現同時操作多個實體分子。在一 些其他的具體實施例中,多個實體分子被先後操作。例 如,透過對實體分子施加超過一種物理力,以使得至少兩 個不同的實體分子被不同類型的物理力所操作,這樣以實 現先後操作多個實體分子。 在其他的具體實施例中,待操作的實體分子處於混合體 系中,利用上述的操作方法,實體分子可以被選擇性操 作。在其他的一些具體實施例中,待操作的實體分子組成 了 一個混合體系,整個混合體系都被操作。 現有的操作方法適用於任何類型的實體分子,例如細 胞、細胞器、病毒、分子和這些物質的複合體。其中,細 胞可以是動物細胞、植物細胞、真菌細胞、細菌細胞、重 組細胞或者是培養的細胞。細胞器可以是細胞核、線粒 _- 16-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 B7 五、發明説明(14 ) 體、葉綠體、核糖體、内質網、高爾基體、溶體、蛋白 體、分泌泡、液泡或微粒體。分子可以是無機分子、有機 分子或無機分子和有機分子的複合體。無機分子可以是離 子如制離子、4甲離子、鍰離子、#5離子、氯離子、鐵離 子、銅離子、鋅離子、I孟離子、姑離子、琪離子、翻離 子、訊離子、鎳離子、絡離子、氣離子、碎離子、鍚離 子、硼離子或是珅離子等等。有機分子可以是氨基酸、 肽、蛋白、核芬、核嘗酸、寡核芬酸、核酸、維生素、單 糖、寡糖、碳水化合物、脂或它們的複合體。 本操縱方法能被用來運輸、聚集、富集、濃縮、集中、 捕獲、排斥、漂浮、分離、分餾、隔離或引導實體分子做 線性或其他的指向的運動。 在另一方面,本發明引導出用於操作實體分子的方法, 該方法包括對實體分子施加至少兩種類型的物理力,從而 該實體分子被該物理力操作。 圖式簡述 圖1是多力操作晶片或本發明所設計的裝置的示意圖, 顯示了晶片(或裝置)能產生電場、磁場、聲場和速度場。 圖2是本發明的多力操作晶片的TF意圖’顯TF 了晶片包 含多個微單元,每一個微單元能夠產生電場、磁場或是聲 場,每一個單元可以進一步包括生物的組分。 圖3是本發明的二力操作晶片的示意圖,晶片能產生聲 場力和常規介電電泳力。 A)相互交錯的能夠產生常規介電電泳力的微電極被製 _-17-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 15五、發明説明( 作在基底上 場。 基底是由壓電材料製成的且能產生聲 B)覆蓋在壓電轉換器(壓電材料基底)兩表面的平面電極 電材料施加電壓以產生聲場。用以產生常規介 電電冰力的圓形微電極被構建在固體基底上(第二基 良)i i泳基底(即第二基底)與壓電材料基底結 合’從而形成二力操作晶片。 c)用以產生聲場的聲波源陣列構建在固體(第一)基底 上、。相互X錯的用以產生常規介電電泳力的電極陣 列被構建在另外一塊固體(第二)基底上。第二美底 (產生介電電泳力)與第一基底結合,形成二力操作晶 片妁流體池示意圖。 的示意圖,晶片能產生聲 圖4是腔底部含有多力操作晶 圖5是本發明的二力操作晶片 %'力和磁場力。 A) 能產生磁場力的微電磁單元或電磁單元陣列被構建 在基底上。基底由壓電材料製成,能產生聲場。 B) 產生聲場的聲波源陣列被構建在一個固體的、壓電 的基底上。微電磁單元陣列被構建在另一個(第二)= 底上第―基底(用以產生磁場力)與由壓電材料 的第一基底(用以產生聲場力)結合,形成了 一個二 操作晶片。 刀 C) 微電磁單元(或電磁單元)陣列與聲波轉換器陣 構建於一個固體基底之上。 ^问___________- 13: This paper size is in accordance with Chinese National Standard (CNS) A4 (21 × 297 mm) 11593683 A7 B7 V. Description of the invention (Speed in the body 0 Internal structure may generate light field In another example micro-machining The velocity field is generated inside the light field of the laser beam and in the medium located at the side of the train. The medium field can apply mechanical force to the physical molecules located in the medium. In another specific embodiment, there is at least one device. In order to generate the light field II shooting force. In one example, the internal structure on the device includes a micro-machined optical lens array. The internal structure on the device that generates the light field includes a private-light source array. In another example, the device can generate a structure that includes a laser clamp. The internal structure of the device can be a microstructure. The basic structure in the microstructure has a characteristic size as early as 7C between G1 microns and 2Gmm. In the device The substrate can contain many types of surfaces, such as broken, silicon dioxide [silicon nitride plastic, glass, ceramic, rubber, and polymer surfaces. For different application needs, the substrate surface can be hydrophobic, but also It can be hydrophilic. The device further includes a containing-block substrate and a fluid pool for holding or supporting or containing a holding molecule to be manipulated. The internal ... structure on the device can be applied to the operating molecule At least two types of physical forces, such as internal structures, may or may not be located on the substrate. The fluid pool may be a closed cavity structure containing at least one inlet port and up to one outlet port. In the specific embodiment, “the device does not include a surveillance or device. In another aspect, the present invention provides a device that can be used to operate entity molecules” The device king includes: a) _ block for containing or supporting the entity to be manipulated Molecular basis; b) at least two types of internal structures, each of which is based on the Chinese paper standard (CNS) A4 specifications (210X297 public attack ·) on this paper. -14- 12 V. Description of the invention (can be combined with additional signals Source combination to generate a type of physical force on the physical molecule. In another aspect, it provides an invention that can be used to operate the physical sub-device. The device king includes: - block or support for receiving a substrate to be handled consistently month beans molecule; b) at least two types of internal structures, each internal structure and the external source # * combination, a physical force on the i type Si can be in the molecule. 'In another aspect, this invention relates to a form of combination in which at least two types of devices include a substrate to contain or support a solid molecule to be operated and at least two substrates built on the substrate Any of these internal structures can be combined with external signal sources to generate a type of physical force on the physical molecule; ㈧ a method of transporting the manipulated physical molecule between devices. On the other hand, this invention relates to a method for manipulating physical molecules, which method includes: a) introducing a to-be-operated entity on a wafer (including a substrate and a built-in structure at least on the substrate) Molecules, where each of these built-in structures can be combined with an external signal source to generate a type of physics field; b) these built-in structures of the wafer are combined with a virtual external signal source to apply on a solid molecule At least two different types of physical forces to achieve the manipulation of solid molecules. On the other hand, this invention relates to a method for manipulating a solid molecule, the method: including: a) on the device (including-a block containing and supporting the to-be-manipulated (base and at least two different types of structures located inside the device) ) Introduce the entity molecule to be manipulated, and its material-like _ structure. This paper is very standard. It is a standard (CNS) A4 specification (21 () χNuo Gongai 1 15- 593683 A7 B7. V. Description of the invention ( 13) Combine with an external signal source to generate a type of physics field; b) Combine these internal structures of the device with an external signal source to apply at least two different types of physical forces on the entity molecule to achieve physical effect on the entity Operation of molecules. In a specific embodiment, the method of operating a physical molecule utilizes at least two different types of physical forces applied to it. In another embodiment, the method of operating a physical molecule utilizes at least Two different types of physical forces applied simultaneously. In some specific embodiments, multiple physical molecules can be operated simultaneously through the above-mentioned operation method. For example, By applying more than one physical force to the physical molecules, at least two different physical molecules are operated by different types of physical forces, so as to achieve the simultaneous operation of multiple physical molecules. In some other specific embodiments, multiple entities The molecules are operated one after the other. For example, by applying more than one physical force to the physical molecules, at least two different physical molecules are operated by different types of physical forces, so as to achieve the operation of multiple physical molecules in succession. In other specific implementations In the example, the entity molecules to be operated are in a mixed system. Using the above-mentioned operation method, the entity molecules can be selectively operated. In some other specific embodiments, the entity molecules to be operated form a mixed system, and the entire mixed system All existing methods are applicable to any type of solid molecules, such as cells, organelles, viruses, molecules and complexes of these substances. Among them, cells can be animal cells, plant cells, fungal cells, bacterial cells, recombinant Cells or cultured cells. Cells Can be nucleus, mitochondria _- 16-_ This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 593683 A7 B7 V. Description of the invention (14) Body, chloroplast, ribosome, endoplasmic reticulum, Golgi Body, solution, protein body, secretory vesicle, vacuole, or microsome. The molecule can be an inorganic molecule, an organic molecule, or a complex of an inorganic molecule and an organic molecule. The inorganic molecule can be an ion such as an ion, a 4-methyl ion, a thallium ion, # 5 ion, chloride ion, iron ion, copper ion, zinc ion, Ion ion, palladium ion, Qi ion, ions ion, information ion, nickel ion, complex ion, gas ion, fragment ion, rubidium ion, boron ion, or It is a hafnium ion, etc. The organic molecule can be an amino acid, a peptide, a protein, a nuclear fen, a nuclear acid, an oligonucleotide, a nucleic acid, a vitamin, a monosaccharide, an oligosaccharide, a carbohydrate, a lipid, or a complex thereof. This manipulation method can be used to transport, aggregate, enrich, enrich, concentrate, capture, repel, float, separate, fractionate, isolate, or guide solid molecules to perform linear or other directed motion. In another aspect, the present invention leads to a method for manipulating a solid molecule, the method comprising applying at least two types of physical forces to a solid molecule such that the solid molecule is operated by the physical force. Brief Description of the Drawings Figure 1 is a schematic diagram of a multi-force operation wafer or a device designed by the present invention, showing that the wafer (or device) can generate an electric field, a magnetic field, a sound field, and a velocity field. Fig. 2 is a TF view of a multi-force operation wafer according to the present invention. The TF shows that the wafer contains a plurality of micro-units, each of which can generate an electric field, a magnetic field, or a sound field. Each unit may further include biological components. Fig. 3 is a schematic diagram of a two-force operation wafer according to the present invention. The wafer can generate a sound field force and a conventional dielectric electrophoresis force. A) Interdigitated microelectrodes capable of generating conventional dielectrophoretic forces are made _-17-_ This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 15 V. Description of the invention (for use on substrates) The base is made of piezoelectric material and can generate sound. B) The plane electrode electrical material covering both surfaces of the piezoelectric transducer (piezoelectric material substrate) applies a voltage to generate a sound field. A circular microelectrode for generating a conventional dielectric ice force is constructed on a solid substrate (second substrate), and a swimming substrate (ie, the second substrate) is combined with a piezoelectric material substrate to form a two-force operation wafer. c) The sound source array used to generate the sound field is constructed on a solid (first) substrate. The electrode arrays, which are X-crossed to generate conventional dielectrophoretic forces, are built on another solid (second) substrate. The second substrate (generating the electrophoretic force) is combined with the first substrate to form a schematic diagram of a two-force operation wafer / fluid pool. Figure 4 shows the wafer can generate sound. Figure 4 shows the multi-force operating crystal at the bottom of the cavity. Figure 5 shows the% 'force and magnetic field force of the two-force operating wafer of the present invention. A) A micro-electromagnetic unit or an array of electromagnetic units capable of generating a magnetic field force is built on a substrate. The substrate is made of a piezoelectric material and can produce a sound field. B) The sound source array that generates the sound field is built on a solid, piezoelectric substrate. The micro-electromagnetic unit array is constructed on the other (second) = bottom-the base (for generating magnetic field force) and the first base (for generating sound field force) made of piezoelectric material combine to form a two operation Wafer. Knife C) Micro-electromagnetic unit (or electromagnetic unit) array and acoustic transducer array are built on a solid substrate. ^ Ask
本纸張尺度適财S國家標準(CNS) A4規格(210X297公I) 593683This paper is suitable for National Standard (CNS) A4 specifications (210X297 male I) 593683
•圖6疋本發明的二力操作晶片的示意圖,晶片能產生介 3電泳力(如常規介電電泳力和/或行波介電 電泳力)和磁場 A)能產生磁場力的微電磁單元或電磁單元的陣列先被 2建、基底上。然後電磁單元上覆蓋一層光滑的介 包層然後在介電層表面上製作相互交錯的電極陣 列。 )此產生磁%力的微電磁單元或電磁單元的陣列先被 構建於基底上 '然後電磁單元陣列上覆蓋_層光滑 的=私層。然後在介電層表面上製作用以產生行波 1私私j力的四相的、線性的、行波介電電泳電極 陣列。 )叱產生磁场力的微電磁單元或電磁單元的陣列先被 構建於基底上。然後電磁單元陣列上覆蓋一層光滑 的力私層。然後在介電層表面上製作用以產生常規 介電電泳力的菱形電極陣列。 吊規 D)能產生磁場力的微電泰 嗞早兀或私磁早兀的陣列先被 ;土辰上。然後電磁單元陣列上覆蓋一層光滑 :介電層。然後在介電層表面上製作用以產 :巧泳力和常規介電電泳力的螺旋型電極陣列。/ :π發明二力操作晶片的示 冰力和磁場力。 日曰巧此產生電 A)说產生磁場力的微電 構建於其产u 早兀或磁早7^的陣列先被 辰上。然後電磁單元陣列上覆蓋-層光滑 B張尺度 裝 訂 二19- x 297 公 ¥7 593683 A7• Figure 6: Schematic diagram of the two-force operation wafer of the present invention. The wafer can generate a dielectrophoretic force (such as a conventional dielectrophoretic force and / or a traveling wave dielectrophoretic force) and a magnetic field. A) A micro-electromagnetic unit capable of generating a magnetic field force. Or the array of electromagnetic units is first built on the substrate. Then, the electromagnetic unit is covered with a smooth dielectric cladding layer and an interdigitated electrode array is formed on the surface of the dielectric layer. ) This micro-electromagnetic unit or array of electromagnetic units that generate magnetic% force is first built on the substrate, and then the electromagnetic unit array is covered with a layer of smooth = private layer. A four-phase, linear, traveling-wave dielectric electrophoretic electrode array for generating traveling waves is then fabricated on the surface of the dielectric layer. ) 叱 A micro-electromagnetic unit or an array of electromagnetic units that generates a magnetic field force is first built on the substrate. The electromagnetic unit array is then covered with a smooth force layer. A diamond-shaped electrode array is then formed on the surface of the dielectric layer to generate a conventional dielectric electrophoretic force. Hanging Regulations D) Micro-electricity arrays that can generate magnetic field forces. The electromagnetic unit array is then covered with a smooth: dielectric layer. Then, a spiral electrode array is produced on the surface of the dielectric layer to produce the electrophoretic force and the conventional dielectric electrophoretic force. /: π Invented the ice force and magnetic field force of the two-force operation wafer. It is said that the electricity is generated by the day A) The micro-electricity that generates the magnetic field force is constructed on the array that produces U early or early 7 ^. Then cover the electromagnetic unit array-layer smooth B sheet scale binding 2 19- x 297 male ¥ 7 593683 A7
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構建在第-基底上了。由光學透鏡陣列組成的光學晶片製 作在相應的基底(第二基底)上。透過一個觀底將二力晶片 和光予卵片結合起來。襯底的中間開有通道,此外,光 晶片上還製作有一個進口埠和一個出口埠。 声圖η 11疋本發明的三力操作裝置的示意圖,裝置能產生 聲%力、磁場力和行波介電電泳力和/或常規介電電泳 Α)覆π在壓電轉換器(壓電材料基底)兩表面的平面電極 給巧料施加電壓以產生聲場。能產生磁場力的 粒I兹單元或電磁單元的陣列先被構建於基底(第二 良)上然後電磁單元上覆蓋一層光滑的介電層。 然後在介電層I面上製作$以產生行波介電電泳力 =四相的、平行的、行波介電電泳電極陣列。技援 :磁早7L陣列和行波介電電泳陣列的第二基底和壓 電基底結合以構成三力操作晶片。 )由壓私材料製成的基底用以產生聲場。平面電極用 以覆盖壓電基底的兩面。I電基底的表面覆蓋了一 層打磨光滑的介電層(第一介電層)。在這層介電層 (昂一介電層)上製作一組微電磁單元或是電磁單元陣 L ;、、:後在包磁單元上覆蓋一層打磨光滑的介電層 (第一介電層)。在這表面打磨的介電層(第二介電層) 士 =製作一組同心圓形狀的電極陣列用以產生常規 介電電泳力和行波介電電泳力。 )產生聲場的聲波源陣列被構建在一個固體基底(第一 -21 - :297公釐)Built on the first base. An optical wafer composed of an optical lens array is fabricated on a corresponding substrate (second substrate). The second force wafer and the light ovum are combined through a viewing base. There is a channel in the middle of the substrate. In addition, an optical port has an inlet port and an outlet port. Acoustic image η 11 疋 Schematic diagram of the three-force operating device of the present invention. The device can generate acoustic% force, magnetic field force, and traveling wave dielectrophoretic force and / or conventional dielectrophoresis A). Material substrate) The planar electrodes on both surfaces apply voltage to the material to generate a sound field. An array of particles or electromagnetic units capable of generating a magnetic field force is first built on the substrate (second best) and then the electromagnetic unit is covered with a smooth dielectric layer. A $ is then made on the dielectric layer I surface to generate a traveling wave dielectrophoretic force = four-phase, parallel, traveling wave dielectrophoretic electrode array. Technical assistance: The second substrate and the piezoelectric substrate of the magnetic early 7L array and the traveling wave dielectric electrophoresis array are combined to form a three-force operation wafer. ) A substrate made of compacted material is used to generate a sound field. Planar electrodes are used to cover both sides of the piezoelectric substrate. The surface of the I electrical substrate is covered with a polished smooth dielectric layer (first dielectric layer). A group of micro-electromagnetic units or an electromagnetic unit array L is fabricated on this dielectric layer (Angle-dielectric layer); and: a polished dielectric layer (first dielectric layer) is covered on the magnetic-encapsulated unit ). The dielectric layer (second dielectric layer) polished on this surface is used to produce a set of concentric circular electrode arrays to generate the conventional dielectric electrophoretic force and traveling wave dielectric electrophoretic force. The sound source array that generates the sound field is constructed on a solid substrate (first -21-: 297 mm)
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線 19 五、發明説明( :展)上。用以產生磁場的微電磁單元或是磁 陣列以及用以產生行波介 兹早疋 丑闾摄诸产β 、电包冰力的輸運電極陣列 元陣列和於個基底(弟二基底)上。支援有電磁單 =和輸運電極陣列的第二基底與第—基底結 口 形成了 一個三力操作晶片。 發明之槿i 這個發明設計了一種稱為多力操作晶片( 多力㈣晶片。?的裝置。這個裝置包括多種類型“ 兀k些内建早兀可以產生不同類型的物理場,從 ί晶片(如生物晶片)上的微粒或是分子施加不同類型的物 理力以對b們進行相應的操作、控制和處理。一方面, 和現有的生物晶片,如能產生介電電泳力的電子晶片、能 產生電泳力的電子晶片、能產生碳場力的磁場力晶片等^ 相比,多力操作晶片的結構更複雜,也需要更複雜的製造 工藝。另一方面,多力操作晶片提供了一種全新的處理生 物樣品、進行化學/生物/生化反應的途徑。 (1)現在典型的生物晶片可以操作或處理一種類型的微 粒和分子。例如,以電泳為基礎的晶片可以操作帶 電分子或微粒;電磁晶片只能操作磁性微粒。但是 單個的多力操作晶片可以處理或操作許多種不同類 型的微粒或分子,比如磁性微粒,帶電或不帶電微 粒或分子,介電極化的微粒或分子。這就為設計和 開發以生物晶片為基礎的生物分析技術增加了新的 靈活性。 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) -22- 593683 A7Line 19 V. Description of Invention (: Exhibition). The micro-electromagnetic unit or magnetic array used to generate the magnetic field, and the traveling electrode array element array used to generate the traveling wave are produced on the substrate (the second substrate). The second substrate and the first substrate interface supporting the electromagnetic single electrode and the transport electrode array form a three-force operation wafer. The invention of the hibiscus i This invention designed a device called a multi-force operation chip (multi-force chip). This device includes multiple types of devices. These built-in early devices can generate different types of physical fields. (Such as biochips) to apply different types of physical forces to the corresponding operations, control and processing of b. On the one hand, with existing biochips, such as electronic chips that can generate dielectric electrophoretic forces, Compared with electronic wafers that generate electrophoretic forces, magnetic field wafers that generate carbon field forces, etc., the structure of multi-force operation wafers is more complex and requires more complex manufacturing processes. On the other hand, multi-force operation wafers provide a new Approaches for processing biological samples and performing chemical / biological / biochemical reactions. (1) Typical biological wafers can now handle or process one type of particles and molecules. For example, electrophoresis-based wafers can handle charged molecules or particles; electromagnetic The wafer can only handle magnetic particles. However, a single multi-force operation wafer can process or manipulate many different types of particles or molecules. Such as magnetic particles, charged or uncharged particles or molecules, dielectricized particles or molecules. This adds new flexibility to the design and development of bio-analytical technology based on biochips. This paper scale applies Chinese national standards ( CNS) A4 size (210 X 297 mm) -22- 593683 A7
作用晶片具有的許多限制和副作用多力 = 可以克服。例如’典型的電泳晶片只能 、曰二%導率非常低的液體溶液。因而在一個電 ί印片上整合多步反應是很困難的,如果不是不可 能,只因為相當數量的生化反應緩衝液需要高電導 率的溶液。一個多力操作晶片可以很好的滿足這樣 整合的需要,因為多力操作晶片不僅可以用電泳力 對那些包括電導率低的溶液在内的生物反應進行操 作,而且可以用其他類型的力,如可以對涉及高電 導率的/谷液的生物反應進行操作的電磁或聲場力。 (3)多力操作晶片可以依次或同時對懸浮液中的微粒或 分子施加多種物理力。在三維空間中這些力的综合 作用可以提高多力操作晶片在選擇性操作,鑑和分 離乾微粒的分辨能力。 可以被多力操作晶片操作的實體分子(如分子和微粒)可 以包括一一固體(例如:玻璃珠、乳膠微粒、磁珠),液體 (例如·液滴)或氣體微粒(例如··氣泡),溶解的微粒(例 如·分子、蛋白、抗體、抗原、油脂、D N A,RN A,分子 複合物),懸浮微粒(例如:玻璃珠、乳膠微粒、聚苯乙烯 珠)’微粒分子複合物(例如:透過在磁珠表面固定DN A 分子而形成的DNA分子磁珠複合物,或用蛋白質分子覆 蓋聚苯乙晞珠而形成的蛋白質分子-聚苯乙晞珠複合物)。 微粒可以是有機的(例如:哺乳動物細胞或其他細胞,細 菌,病毒或其他微生物)’也可以是無機的(例如:金屬微 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Many of the limitations and side effects of working wafers can be overcome. For example, a typical electrophoretic wafer can only be a liquid solution with a very low conductivity of 2%. It is therefore difficult to integrate multi-step reactions on a single electroprinted plate, if it is not impossible, simply because a considerable amount of biochemical reaction buffer requires a highly conductive solution. A multi-force operation wafer can well meet the need for such integration, because the multi-force operation wafer can not only use electrophoretic force to operate biological reactions including solutions with low conductivity, but also use other types of forces, such as Electromagnetic or acoustic field forces that can operate on biological reactions involving high conductivity / valley fluids. (3) Multiple force operation The wafer can apply multiple physical forces to the particles or molecules in the suspension in sequence or simultaneously. The combined effect of these forces in the three-dimensional space can improve the resolution of the multi-force operation wafer in selective operation, identification and separation of dry particles. Solid molecules (such as molecules and particles) that can be manipulated by multi-force manipulation wafers can include solids (such as glass beads, latex particles, magnetic beads), liquids (such as droplets), or gas particles (such as bubbles) Dissolved particles (such as molecules, proteins, antibodies, antigens, oils, DNA, RN A, molecular complexes), suspended particles (such as glass beads, latex particles, polystyrene beads) 'particle molecular complexes (such as : DNA molecule magnetic bead complex formed by fixing DNA molecules on the surface of magnetic beads, or protein molecule-polystyrene acetate bead complex formed by covering polyphenylene oxide beads with protein molecules). Microparticles can be organic (eg mammalian cells or other cells, bacteria, viruses or other microorganisms) or inorganic (eg metal micro-23) This paper is in accordance with China National Standard (CNS) A4 (210 X 297 mm)
B7 發明説明 粒)。微粒可以具有不同的形狀(例如:球狀,橢球狀,立 万體狀,鐵餅狀,針狀)和不同的尺寸(例如:納米級金 球,微米級的細胞,亳米級的微粒聚合物)。微粒包括, 但並不僅僅限於,生物分子(如DNA、RNA、染色體)、 蛋白質分子(如抗體)、細胞、膠體微粒(如聚苯乙晞珠,磁 珠)、分子微粒聚合物(如蛋白質分子連接在抗體覆蓋的磁 珠上)。 、對於一個多力操作晶片,最重要的一點是,它具有同時 或依次操作不同種類型的微粒的能力。例如,一個多力操 作晶片如果加入了磁場力發生元件和電泳力發生元件,就 可以同時操作生物分子覆盍的磁珠和帶電的細胞或分子。 本發明的具體描述分為以下的幾個部分,其目的是為了 更清楚的解釋本發明的思路,而不是意味著本發明僅僅包 括以下的部分。 发義 、疋另外足我,所有這裏用到的技術術語和科學術 語的含義和本發明所屬領域的技術中通常理解上的各義是 -致的。本發明所參考的所有的專利、應用、公佈:應用 和其他出版物都已參考文獻的形式整合到本專利文本中' 如果在本節中的所下的定義與以參考文獻形式整合到本專 利又本中所有的專利、應用、公佈的應用和其他出版物所 下的定義不—致,那麼,本節中所下的定義將取代參考文 獻中所下的定義。 一個是指“至少一個 或 個或更多” ________-24· 本纸張尺度適财S國家標準(CNS)U見格(2—茇------ 593683 A7 B7 22 五、發明説明( “晶片{指其上具有一維、=維或三維的微結構的固 體基底,在其上可以進行物理、化學、生物、生物物理或 生物化學的處理。晶片上的微結構,如槽和孔、電極元 件、電磁元件H,是透過整合、直接製作或是枯貼在基 底上的,以使在晶片上進行物理、生物物理、生物、生物 化學、化學反應或處理成為可能。晶片可以是具有各種不 同形狀的薄片,例如矩形、圓形、橢圓形,或其他不規則 的形狀。本發明中的晶片的主表面的尺寸範圍很寬廣,比 如,可以從大約1 mm2到大約〇·25 m2。更適宜的是, 晶片的大小從大約4 mm2到大約25 cm2,其特徵尺寸從 大約1 mm到大約5 cm。晶片表面可以是平的,或不是平 的。真有非平表面的晶片可以包括在其表面上製造的通道 或孔。 物理場,其他的說法還有“在一定空間範圍内的物 理場或在一定空間範圍内產生的物理場”是指一個具 有如下特徵的空間範圍。當一個具有適當性質的實體分子 被放入這一 2間中(也就是進入物理場中),作為這一實體 分子和場叉互作用的結果,實體分子受到了力的作用。實 體分子在場中透過場在其上施加的力受到操作。典型的場 包括電場、磁場、聲場、光場和速度場。在本發明中,物 理場總是存在於一定空間範圍内的介質中的,這些被操作 的貫體分子通常是懸浮在、或溶解在,或更一般的是被放 在介質中。典型的介質是液體如水或非水液體,或是氣 體。根據場的結構,電場可以對帶電實體分子施加電泳 ____-25- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 , A7 B7 五、發明説明(23 ) 力,或對帶電或中性實體分子施加常規介電電泳力和/或 行波介電電泳力。磁場可以對磁性實體分子施加磁場力; 聲場可以對實體分子施加聲場輻射力;光場可以對實體分 子施加光場輻射力。在一定空間範圍内的介質中的速度場 是指在這一空間範圍内介質移動的速度分佈。各種不同的 機制可以引起介質的移動並且在不同位置的介質表現出不 同的速度,所以產生了 一個速度場。速度場可以對實體分 子施加機械力。 “介質”是指一種載流體,例如,液體或氣體,待操作 的實體分子溶解、懸浮或含於其中。 “微流體應用”是指使用微小裝置進行流體控制,尤其 是指對一些生物、生物化學或是化學反應和處理的流體控 制。基本結構元件的特徵尺寸從小於1微米到1公分。這 些應用的領域包括,但並不僅僅限於,生物晶片(用於與 生物相關的反應和過程的晶片)、化學晶片(用於化學反應 的晶片)或者是兩者的複合體。 “基底上的内建結構”是指這些結構内嵌在基底上或是 這些結構位於基底上並且與基底相連。在一個具體實施例 中,這樣的内建結構是直接製造在基底上的。例如,如同 在 “Dielectrophoretic manipulation of cells using spiral electrodes by Wang et al., Biophys. J., 72:1887-1899 (1997)” 中 描述的一樣,螺旋狀的電極製造在玻璃基底上。在這裏, 螺旋電極是在玻璃基底上的“内建”的結構。在另一個具 體實施例中,這種内建結構可以先製造在一個基底上,然 -26- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 —— ___ B7 五、發明説明(24 ) 後這個含有内建結構的基底可以再與另一片基底相連接。 這樣這種〃内建,,結構在兩片基底上都有。再另一個具體 實施例中’這種内建結構可以直接連接在該基底。例如, 細的電導線可以當作電極來產生電場。這些電導線可以直 接連接在玻璃基底上。在這個例子中,電導線是玻璃基底 上的内建”結構。在全文中,所描述到的在晶片或基底 上有能力產生物理力和或物理場的内建結構,可以與外部 信號源或外部能源相組合。 孩裝置的内部結構,,是指這種結構是整合在裝置中的 一部分並且與其他部分相連接,或者是這些結構是裝置中 不能分離或不可分離的一部分。例如,這樣的内部結構可 以微加工或者結合在基底上或是其他結構元件上。只要該 裝置包含基底,任何上述的“基底上的内建結構,,都是 “該裝置的内部結構,,。只要該裝置包含晶片,任何在晶 片上的内建結構都是該裝置的内部結構。在全文中,所描 $到的在晶片或基底上有能力產生物理力和或物理場的 内部結構,可以與外部信號源連接。 微結構”的特徵尺寸在1微米至20毫米之間,裝置 上的用以產生所需物理力的内部結構的尺寸應當與微流體 應用的要求相協調。 貫體分子;I:指任何可以在晶片上進行操作的物質。 般來說’這些物質的特徵尺寸不應超過i釐米。例如, 如果适些物質是球形或接近球形,它的特徵尺寸是指球或 近似球形的直徑。如果這些物質是立方體或近似立方體, 本紙張尺度適用中國國家標準-- 593683 A7 _ B7 五、發明説明(25 ) 則它的特徵尺寸是指立方體或近似立方體的邊長。如果這 些物質具有不規則的形狀,則它的特徵尺寸是指它的最大 軸和最小軸長度的平均值。實體分子可以是,但不僅僅限 於,細胞、細胞器、病毒、微粒、分子(如蛋白質,DNA 和RNA),或它們的聚合物或複合物。 可以被操作的實體分子包括多種微粒--固體(例如: 玻璃珠、乳膠微粒、磁珠),液體(例如:液滴)或氣體微粒 (例如:氣泡),溶解的微粒(例如:分子、蛋白、抗體、抗 原、油脂、DN A,RN A,分子複合物),懸浮微粒(例如: 玻璃珠、乳膠微粒、聚苯乙烯珠)。微粒可以是有機的(例 如:哺乳動物細胞或其他細胞,細菌,病毒或其他微生 物),也可以是無機的(例如:金屬微粒)。微粒可以具有不 同的形狀(例如:球狀,橢球狀,立方體狀,鐵餅狀,針 狀)和不同的尺寸(例如:納米級金球,微米級的細胞,毫 米級的微粒聚合物)。微粒的例子包括,但並不僅僅限 於,生物分子(如DNA、RNA、染色體)、蛋白質分子(如 抗體)、細胞、膠體微粒(如聚苯乙晞珠,磁珠)以及任何生 物分子(如酶、抗原、激素等等)。一類特殊的微粒由實體 分子和它們的連接物所形成的複合物,和正在申請審核過 程中的名為為 “METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS”(by Wang et al·,filed on August 10, 2000)的美國專利中所描述的一樣。這樣的複合物的例 子包括微粒-微粒複合物,微粒-分子複合物(例如:細胞-磁珠複合物是透過細胞表面的抗原或蛋白質分子和固定在 ______-28-_ 本纸張尺度適用中國國家標準(CNS) Μ規格(⑽X297公爱) 593683 A7 B7 五、發明説明(26 ) 磁珠表面上的抗體分子之間的交互作用讓細胞連接在抗體 覆蓋的磁珠上而形成的;DNA分子-磁珠複合物是透過將 DNA分子固定在磁珠表面形成的,或蛋白質分子-聚苯乙 稀珠複合物是透過將蛋白質分子覆蓋在聚苯乙晞珠表面而 形成的)。於正在審核過程的美國專利申請"METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEM,,(由 王等人於2000年8月10曰申請的美國專利申請案號第 09/636,104)可用來操縱本發明裝置中的實體分子和/或 連接物一實體分子複合物。由王等人於2000年8月10 日申請的正在審核中的名為"METHODS FOR MANIPULATING MOIETIES IN MICROFLUIOIC SYSTEM,,的 美國專利申請案(美國專利申請號09/63 6,1 04)整個以參 考的方式併入本發明。 在這裏,“植物”是指植物屬中的任何可進行光合作用 的真核多細胞生物體,其特徵為可以產生胚胎,包含葉綠 體,具有纖維素成分的細胞壁,無法移動。 在這裏,“動物”是指動物屬中的任何多細胞生物體, 其特徵為具有移動的能力,無光合作用機制,對刺激有明 顯的豕應,具有有限的發育程度和大致固定的身體結構。 動物的例子包括,但是不僅僅限於,鳥類(如雞),脊椎動 物(如魚和哺乳動物,如大鼠、小鼠、兔子、貓、狗、 豬、奶牛、公牛、綿羊、山羊、馬、猴和其他類人猿)等 “細菌”是指小的真核生物(特徵尺寸大約為1微米左 ___ _-29-__ 本紙張尺度適用中國國家榡準(CNS) A4規格(210X297公釐) 593683B7 Description of the invention Particles can have different shapes (for example: spherical, ellipsoidal, cuboid, discus, needle) and different sizes (for example: nano-scale gold spheres, micro-scale cells, micrometer-scale aggregates of particles Thing). Microparticles include, but are not limited to, biological molecules (such as DNA, RNA, chromosomes), protein molecules (such as antibodies), cells, colloidal microparticles (such as polystyrene beads, magnetic beads), and molecular microparticle polymers (such as proteins The molecule is attached to an antibody-coated magnetic bead). For a multi-force operation wafer, the most important point is that it has the ability to operate different types of particles simultaneously or sequentially. For example, if a multi-force operation chip is added with a magnetic field force generating element and an electrophoretic force generating element, it can simultaneously operate biomolecule-coated magnetic beads and charged cells or molecules. The detailed description of the present invention is divided into the following parts, the purpose of which is to explain the idea of the present invention more clearly, and does not mean that the present invention includes only the following parts. The meaning of the word is sufficient, and the meanings of all the technical terms and scientific terms used here are consistent with the meanings commonly understood in the technology of the field to which the present invention belongs. All patents, applications, publications referenced by the present invention: Applications and other publications have been incorporated into the text of this patent by reference. 'If the definitions in this section are incorporated into this patent by reference, All patents, applications, published applications, and other publications in this document have inconsistent definitions, so the definitions in this section will supersede the definitions in the references. One refers to "at least one or more or more" ________- 24 · The national standard (CNS) of this paper is suitable for standardization (CNS) U Seek (2— 茇 ------ 593683 A7 B7 22 V. Description of the invention ( "Wafer {refers to a solid substrate with a one-dimensional, three-dimensional, or three-dimensional microstructure on which physical, chemical, biological, biophysical, or biochemical processing can be performed. Microstructures on a wafer, such as slots and holes , Electrode element, electromagnetic element H are integrated, directly fabricated or affixed to the substrate to enable physical, biophysical, biological, biochemical, chemical reactions or processing on the wafer. The wafer can have Various shapes of flakes, such as rectangular, circular, oval, or other irregular shapes. The size of the main surface of the wafer in the present invention is very wide, for example, it can be from about 1 mm2 to about 0.25 m2. More suitably, the size of the wafer is from about 4 mm2 to about 25 cm2, and its characteristic size is from about 1 mm to about 5 cm. The surface of the wafer may or may not be flat. A wafer with a truly non-flat surface may include Channels or holes made on its surface. Physics, other terms also include "physical fields within a certain spatial range or physical fields generated within a certain spatial range" refers to a spatial range with the following characteristics. When a Physical molecules of appropriate properties are placed in these two rooms (that is, into the physical field). As a result of the interaction between the physical molecules and the field fork, the physical molecules are subjected to forces. The physical molecules penetrate the field in the field. The force exerted on it is manipulated. Typical fields include electric, magnetic, acoustic, light, and velocity fields. In the present invention, the physical field always exists in a medium within a certain spatial range, and these are manipulated Permeant molecules are usually suspended, dissolved, or more generally placed in a medium. A typical medium is a liquid such as water or a non-aqueous liquid, or a gas. Depending on the structure of the field, an electric field can be applied to charged entities. Electrophoresis ____- 25- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 593683, A7 B7 V. Description of the invention (23) Neutral solid molecules apply conventional dielectrophoretic forces and / or traveling wave dielectrophoretic forces. Magnetic fields can exert magnetic field forces on magnetic solid molecules; sound fields can exert sound field radiation forces on solid molecules; light fields can apply light to solid molecules Field radiation force. The velocity field in a medium within a certain spatial range refers to the velocity distribution of the medium's movement within this spatial range. Various different mechanisms can cause the movement of the medium and the medium at different positions exhibits different speeds. Therefore, a velocity field is generated. The velocity field can exert mechanical force on the solid molecules. "Medium" refers to a carrier fluid, for example, a liquid or gas, in which the solid molecules to be manipulated are dissolved, suspended, or contained therein. "Microfluidic Applications" Refers to the use of tiny devices for fluid control, especially for the control of some biological, biochemical, or chemical reactions and processes. The characteristic dimensions of basic structural elements range from less than 1 micron to 1 cm. These areas of application include, but are not limited to, biochips (wafers used for biologically related reactions and processes), chemical wafers (wafers used for chemical reactions), or a combination of the two. “Built-in structures on a substrate” means that the structures are embedded on the substrate or that the structures are on the substrate and connected to the substrate. In a specific embodiment, such a built-in structure is fabricated directly on the substrate. For example, as described in "Dielectrophoretic manipulation of cells using spiral electrodes by Wang et al., Biophys. J., 72: 1887-1899 (1997)", spiral electrodes are fabricated on a glass substrate. Here, the spiral electrode is a "built-in" structure on a glass substrate. In another specific embodiment, this built-in structure can be manufactured on a substrate first, but -26- this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 593683 A7 —— ___ B7 V. Description of the invention (24) After the substrate containing the built-in structure can be connected to another substrate. In this way, the structure is built on both substrates. In yet another embodiment, such a built-in structure can be directly connected to the substrate. For example, a thin electrical wire can be used as an electrode to generate an electric field. These electrical leads can be connected directly to a glass substrate. In this example, the electrical lead is a built-in structure on a glass substrate. Throughout the text, the built-in structure described on the wafer or substrate that has the ability to generate physical forces and / or fields can interact with external signal sources or The combination of external energy sources. The internal structure of a device means that the structure is part of the device integrated and connected to other parts, or these structures are inseparable or inseparable parts of the device. For example, such The internal structure can be micro-machined or combined on a substrate or other structural elements. As long as the device contains a substrate, any of the above-mentioned "built-in structures on a substrate are" the internal structure of the device, as long as the device contains Wafer, any built-in structure on the wafer is the internal structure of the device. Throughout the text, the internal structure described on the wafer or substrate that is capable of generating physical forces and or physical fields can be used with external signal sources Connections. Microstructures "feature sizes ranging from 1 micron to 20 millimeters. The internal structure of the device used to generate the required physical force. Inch should be coordinated with the requirements of the microfluidic applications. Through-molecules; I: Any substance that can be manipulated on a wafer. Generally speaking, the characteristic size of these substances should not exceed i cm. For example, if a suitable substance is spherical or nearly spherical, its characteristic size refers to the diameter of a sphere or approximately spherical shape. If these substances are cubes or approximate cubes, this paper scale applies the Chinese national standard-593683 A7 _ B7 V. Description of the invention (25) Then its characteristic size refers to the side length of the cube or approximate cube. If these materials have irregular shapes, their characteristic dimensions are the average of their maximum and minimum axis lengths. Physical molecules can be, but are not limited to, cells, organelles, viruses, microparticles, molecules (such as proteins, DNA and RNA), or their polymers or complexes. The solid molecules that can be manipulated include a variety of particles-solid (for example: glass beads, latex particles, magnetic beads), liquid (for example: droplets) or gas particles (for example: bubbles), and dissolved particles (for example: molecules, proteins , Antibodies, antigens, oils, DN A, RN A, molecular complexes), suspended particles (for example: glass beads, latex particles, polystyrene beads). The particles can be organic (for example, mammalian or other cells, bacteria, viruses, or other microorganisms) or inorganic (for example, metal particles). Particles can have different shapes (for example: spherical, ellipsoidal, cubic, discus, needle) and different sizes (for example: nano-scale gold balls, micro-scale cells, millimeter-scale particulate polymers). Examples of particles include, but are not limited to, biological molecules (such as DNA, RNA, chromosomes), protein molecules (such as antibodies), cells, colloidal particles (such as polystyrene beads, magnetic beads), and any biological molecules (such as Enzymes, antigens, hormones, etc.). A special type of particle is a complex formed by solid molecules and their linkers, and is called "METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS" (by Wang et al., Filed on August 10, 2000) ) As described in the US patent. Examples of such complexes include microparticle-microparticle complexes, microparticle-molecular complexes (eg, cell-magnetic bead complexes are antigen or protein molecules that permeate the cell surface and are fixed at ______- 28-_ This paper standard applies Chinese National Standard (CNS) M specification (⑽X297 public love) 593683 A7 B7 V. Description of the invention (26) Interaction between antibody molecules on the surface of magnetic beads is formed by cells connected to antibody-covered magnetic beads; DNA The molecule-magnetic bead complex is formed by fixing DNA molecules on the surface of magnetic beads, or the protein molecule-polystyrene beads complex is formed by covering protein molecules on the surface of polystyrene beads. U.S. Patent Application " METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEM, (under U.S. Patent Application No. 09 / 636,104, filed by Wang et al. On August 10, 2000) can be used to manipulate the device of the invention Solid molecule and / or linker-solid molecular complex. The pending U.S. patent application (U.S. Patent Application No. 09/63 6, 1 04) filed under the name of "METHODS FOR MANIPULATING MOIETIES IN MICROFLUIOIC SYSTEM" by Wang et al. On August 10, 2000 The mode of reference is incorporated in the present invention. Here, "plant" refers to any eukaryotic multicellular organism in the genus Plant that can perform photosynthesis, and is characterized in that it can produce embryos, contain chloroplasts, and have cell walls with cellulose components and cannot move. Here, "animal" refers to any multicellular organism in the genus Fauna, which is characterized by its ability to move, has no photosynthesis mechanism, has a pronounced response to stimuli, has a limited degree of development, and has a generally fixed body structure. . Examples of animals include, but are not limited to, birds (such as chickens), vertebrates (such as fish and mammals, such as rats, mice, rabbits, cats, dogs, pigs, cows, bulls, sheep, goats, horses, Monkeys and other apes) and other "bacteria" refer to small eukaryotes (characteristic size is about 1 micron left _ _-29 -__ This paper size applies to China National Standard (CNS) A4 (210X297 mm) 593683
)八有沈降係數大約為7 0 s的核糖體和閉合環狀 DNA °細菌蛋白質的合成方式與真核生物不同。許多抗菌 素抑制、、、田菌蛋白質的合成但不影響被感染的宿主。 真細菌”是指細菌中除古細菌之外的另一大子類。絕 ^多數的格蘭氏陽性菌、藍藻細菌、支原體、腸細菌、假 單胞菌和葉綠體都是真細菌。真細菌的細胞質膜含有酯連 接脂類’如果有細胞壁,它含有肽聚糖;真細菌的基因组 中沒有發現内元。 ' 古細菌”是指細菌中除了真細菌之外的又一大子類。 王要有三大類古細菌:嗜鹽菌,甲烷菌和一種依賴硫生存 的極為嗜熱的菌類。古細菌與真細菌的區別主要在於核糖 體結構和細胞膜成分上的差異,(在某些例子中)古細菌的 基因組具有内元。 病毒”是一種在宿主細胞内生活的生物體,不具有細 胞的結構特徵,具有DNA或RNA和蛋白質的外殼。病 毒的尺寸範圍從大約2 0到大約3 0 0納米。第一類病毒 (Baltimore分類)的基因組是雙鏈dNA ;第二類病毒的 基因組是單鏈DNA;第三類病毒的基因組是雙鏈RN a ; 第四類病毒的基因組是單鏈的正鏈RN A,基因組自己作 為病毒的mRNA ;第五類病毒的基因組是單鏈的反鏈 RNA,基因組是合成mRNA的模板;第六類病毒的基因 組是單鏈的正鏈RNA,但在複製和mRNA的合成中都以 DNA作為介質。大多數病毒是透過它們在植物,動物和 原核生物上所引起的疾病來識別的。原核生物的病毒被稱 -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)) The ribosomes and closed-loop DNA with a sedimentation coefficient of about 70 s are synthesized in different ways from eukaryotes. Many antibiotics inhibit the synthesis of bacilli, but do not affect the infected host. "True bacteria" refers to another major subgroup of bacteria other than archaea. Most Gram-positive bacteria, cyanobacteria, mycoplasma, intestinal bacteria, pseudomonas, and chloroplasts are all true bacteria. True bacteria The cytoplasmic membrane contains ester-linked lipids' if there is a cell wall, it contains peptidoglycans; no endogen is found in the genome of a true bacterium. 'Archabacteria' refers to another major subgroup of bacteria besides true bacteria. Wang wants to have three major groups of archaeal bacteria: halophiles, methanogens, and an extremely thermophilic fungus that depends on sulfur for survival. Archaea are distinguished from true bacteria mainly by differences in ribosomal structure and cell membrane composition, and (in some cases) archaeal genomes have internal elements. A "virus" is an organism that lives within a host cell. It does not have the structural characteristics of a cell and has a coat of DNA or RNA and protein. The size of the virus ranges from about 20 to about 300 nanometers. The first type of virus (Baltimore Classification) The genome is double-stranded dNA; the genome of the second type of virus is single-stranded DNA; the genome of the third type of virus is double-stranded RN a; the genome of the fourth type of virus is single-stranded positive-stranded RN A, and the genome itself acts as Viral mRNA; the genome of the fifth type of virus is a single-stranded anti-strand RNA, and the genome is a template for synthesizing mRNA; the genome of the sixth type of virus is a single-stranded positive-strand RNA, but DNA is used for replication and mRNA synthesis. As a medium. Most viruses are identified by the diseases they cause on plants, animals and prokaryotes. Prokaryotic viruses are called -30- This paper is scaled to the Chinese National Standard (CNS) A4 (210 X 297) (Mm)
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為噬菌體。 〜Ϊ菌々疋真核生物中的-類,它們以不規則的聚集开 怨生長,沒有招,兮 一 、γ、—Α 里或茱,並且缺少葉綠素或其他的能矣 進行光口作用的务妄 色素。母個真鹵(扁平體)是一個單細胞# 狀眩,纟且擁有分支狀的菌絲,#細胞壁(含有葡聚揭 和幾丁質或兩者都有)包園著,含有真正的細胞核。。 Η⑯是指任何可以和實體分子以親和性和特 /、、目、、的任何物質,並且可以透過想要的物理力進行操 :。連接物可以是’但不僅僅限於,細胞、細胞器、病 母、微粒、聚合體哎垆人触 V, 及k 口粗,或者分子的聚合體或複合 體。 微粒疋私任何形狀,任何組成,具有任何複合結構 的微粒’可以透過所欲的物理力在微流體裝置中進行操 作。微粒的—個例子是用磁場力操作的磁珠。微粒的另— 個例子是用諸如行波介雷泰 ^ ο 反;丨私包冰力寺電場力來進行操作的細 種万法中用到的微粒,尺寸可以從大約0.01微 米到大約1 0釐米。更人摘的3 、 文口通的疋,在這種方法中的微粒的 尺寸從大約0 · 0 1微失^丨丨士从傲1 , 儆木到大約幾千個微米。微粒的例子包 括,但不僅僅限於’塑膠微粒、聚苯乙缔微珠、玻璃珠、 磁珠、中空玻璃球、複合成分的微粒、微加 建微結構等《其他微粒包括细晌^ A ^ G祜、邱胞、細胞器、大的生物分子 如DNA、RNA和蛋白質等。 “操作”是指移動和處理這些實體分子,從而導致實# 分子在晶片上(包括在單晶片上或多晶片上或之間,在^For phage. ~ The species of eukaryotes in the eukaryotes, they grow in irregular clusters, and have no tricks, such as γ, γ, Α, or Jujube, and lack of chlorophyll or other capable of light mouth function. Delirious pigment. The female true halide (flat body) is a single cell with a dizziness, stubborn and branched hyphae. The # cell wall (containing glucosamine and chitin, or both) is wrapped and contains the true nucleus. . . Η⑯ refers to any substance that can be related to the entity molecule with affinity and special, objective, and can be manipulated through the desired physical force :. The linker can be, but is not limited to, cells, organelles, pathogens, microparticles, aggregates, human contact V, and k-mouth, or molecular aggregates or complexes. The particles are of any shape, any composition, and have any composite structure. The particles can be manipulated in a microfluidic device by a desired physical force. An example of a particle is magnetic beads that are operated with magnetic field forces. Another example of particles is the particles used in the fine method of operation such as traveling wave-medicine ^ ο inverse; 丨 privately-packed ice force temple electric field force, the size can be from about 0.01 microns to about 10 cm . Even more interesting, the size of the particles is small in this method, from about 0 · 0 1 micron ^ 丨 丨 from Ao 1, wood to about several thousand microns. Examples of microparticles include, but are not limited to, 'plastic microparticles, polystyrene beads, glass beads, magnetic beads, hollow glass spheres, composite component particles, micro-addition microstructures, etc. "Other particles include fine particles ^ A ^ G 祜, Qiu cells, organelles, large biological molecules such as DNA, RNA and proteins. "Operation" refers to the movement and processing of these physical molecules, resulting in real # molecules on the wafer (including on a single wafer or on or between multiple wafers, in ^
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本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱T -31 - 593683 A7 B7 五、發明説明(29 ) 底上或在裝置中的多個基底之間)作一維、二維或三維方 向上的運動。對這些實體分子的操作也可以是在液體容器 中進行。“操作”包括,但不僅僅限於,輸運、聚焦、富 集、濃縮、聚集、捕獲、推斥、飄浮、分離、分餾、隔 離、線性或是其他方向上的實體分子的移動。為了實現有 效的操作,待操作的實體分子和施加於其上的物理力應是 協調的。例如,具有磁性的實體分子可以施加以磁場力。 相似的,具有電荷的實體分子可以施加以靜電力(即電泳 力)。在操作連接物一實體分子複合物的情況中,這些實 體分子或相應的連接物的性質和用於操作的物理力必須是 協調的。例如,實體分子或它的連接物具有一定的介電性 質,可以介電極化的,可以使用介電電泳力。 “不可直接操作的實體分子”是_指在特定物理力的作用 下,當這些實體分子沒有與它的連接物相連時,觀察不到 任何可見的運動。 “物理力”是指這樣一種用以使實體分子或是其連接物 運動的力,它不與或是幾乎不與實體分子或是其連接物發 生化學、生物反應,不影響或是幾乎不影響實體分子或是 其連接物的生物、化學性質。術語“力”或“物理力”總 是指作用在這些實體分子上的“力”或“物理力”, “力”或“物理力”是透過場的作用產生的,由實體分子 本身的性質決定。因此,當給定了一個場或物理場,為了 在實體分子上產生物理力,這些實體分子必須具有一定的 性質。某些類型的場可以在多種具有不同性質的實體分子 -32- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)This paper size applies to China National Standard (CNS) A4 specifications (210X297 Public Love T -31-593683 A7 B7 V. Description of the invention (29) on the bottom or between multiple substrates in the device) for one-dimensional, two-dimensional or Movement in three dimensions. The manipulation of these solid molecules can also be performed in a liquid container. "Operation" includes, but is not limited to, transport, focusing, enrichment, enrichment, aggregation, capture, repulsion, floatation, separation, fractionation, isolation, linear, or movement of solid molecules in other directions. In order to achieve effective operation, the entity molecule to be operated and the physical force applied to it should be coordinated. For example, a magnetic entity molecule may apply a magnetic field force. Similarly, charged solid molecules can be subjected to electrostatic forces (ie, electrophoretic forces). In the case of operating linker-entity molecular complexes, the properties of these physical molecules or corresponding linkers and the physical forces used for the operation must be coordinated. For example, a solid molecule or its linker has certain dielectric properties, can be dielectrically polarized, and can use a dielectrophoretic force. “Non-manipulable solid molecules” means that under the action of specific physical forces, when these solid molecules are not connected to their linkers, no visible movement is observed. "Physical force" refers to a force used to move an entity molecule or its attachment, and it does not chemically or biologically react with the entity molecule or its attachment, does not affect or hardly affect The biological and chemical properties of a solid molecule or its linker. The term "force" or "physical force" always refers to the "force" or "physical force" acting on these physical molecules. The "force" or "physical force" is generated through the action of a field and is derived from the nature of the physical molecule Decide. Therefore, when a field or physical field is given, in order to generate physical forces on the solid molecules, these solid molecules must have certain properties. Some types of fields can be used in a variety of solid molecules with different properties -32- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm)
上都產生力的作用, 有限類型的實體八:某些類型的場也許只可以在對-些 性實體分子二二—她加力的作用。例如,磁場只能在磁 力,而不適用疋磁性的實體分子上產生力或磁場 方面,=二他類型的微粒,如聚苯乙婦珠。而另- 子上施A 5的電場可以在許多種不同類型的實體分 予上她加物理力的作用, $缸刀 粒等等。並奋永丰乙烯珠'細胞,還有磁微 二、不須要求物理場在不同類型實體分子上 ^ 用,但物理場必須至少可以在一種實體分子 和-個實體分子上產生力的作用。 …子 電場力”1電場對實體分子施加的力。 磁場力,,是磁場對實體分子施加的力。 聲場力(聲場輻射力),,是指聲場對實體分子施加的 光場力(光輻射力)”是光場對實體分子施加的力。 機械力是速度場對實體分子施加的力。 待操作的實體分子與連接物的表面充分結合,,是指一 足百分比的,最好是大多數的待操作的實體分子結合在連 接物的表面並且可以用適當的物理力透過操作連接物進而 實現對實體分子的操作。通常,至少〇 . 5 %的待操作的實 體分子是結合在連接物的表面的。更適宜的是至少i %, 2%,3%,4%,5%,1〇〇/0,20〇/〇,30〇/〇,40〇/〇,5〇0/〇, 60%,70%,8 0%,或90%的實體分子是結合在連接物 的表面的。結合實體分子的百分比包括結合在一種特定連 接物表面上或連接在多種連接物上。當使用多種連接物 -33- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)All of them have a force effect, a limited type of entity VIII: certain types of fields may only work on some of the physical entity molecules 22-her afterburner effect. For example, magnetic fields can only generate forces or magnetic fields on magnetic molecules that are not suitable for magnetic entities, such as other types of particles, such as polystyrene beads. On the other hand, the electric field applied by A 5 can be used to add physical force to many different types of entities, such as $ cylinder blades and so on. And Fen Yongfeng vinyl beads' cells, as well as magnetic micro-second, does not require the physical field to be used on different types of solid molecules, but the physical field must be able to generate force on at least one solid molecule and one solid molecule. … Sub-field force ”1 The force exerted by an electric field on a solid molecule. Magnetic field force is the force exerted by a magnetic field on a solid molecule. Sound field force (radiation force of a sound field) refers to the light field force exerted by a sound field on a solid molecule. (Light radiation force) "is the force exerted by a light field on a solid molecule. Mechanical force is the force exerted by a velocity field on a solid molecule. The full binding of the entity molecule to be operated to the surface of the linker means a full percentage. It is best that most of the entity molecules to be operated are bound to the surface of the linker and can be realized by operating the linker with appropriate physical forces. Operations on solid molecules. Usually, at least 0.5% of the actual molecules to be manipulated are bound to the surface of the linker. More suitable is at least i%, 2%, 3%, 4%, 5%, 100/0, 20/0, 30/0, 40/0, 5000/0, 60%, 70%, 80%, or 90% of the solid molecules are bound to the surface of the linker. The percentage of binding entity molecules includes binding to the surface of a particular linker or to multiple linkers. When using a variety of connectors -33- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
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緣 593683Fate 593683
時, 上。 這些物質可以同時或依次的結合在 多種連接物的表面 待操作的實體分子完全結合在連接物的表面± 至少則的待操作實體分子結合在連接物的表面上。更^ ㈣是,至少91%,92%,93%,94%95%,96%97% 98%’ 99%或刚%的待操作實體分子結合在連接物的表 面上。結合實體分子的百分比包括結合在—種特定連接物 表面上或連接在多種連接物上。當使用多種連接物時,奋 體分子可以同時或依次的結合在多種連接物的表面上/ “細胞内實體分子部分”是位於細胞内的實體分子,即 位於細胞質或細胞器基底中,附著在任何細胞内膜上,位 於質膜(如果存在)上’或是位於細胞表面,即附著在細胞 質膜或細胞壁(如果存在)的外表面上。 晶片和裝置 一方面,茲項發明提供了一種用於產生場的晶片,該晶 片包含:a)-個基底;b)至少兩種構建在該基底上二 的内建結構,其中任何一種這樣的内建結構都可以與外部 信號源組合,以產生一種類型的物理場。在這裏,物理場 的產生是在外部信號源(“外部”是相對本發明中的晶^ 而T )和基底或是晶片上的内建結構的結合下實現的。外 部信號源和晶片上的内建結構連接,並向其提供信號,從 而使得内建結構產生相應的物理場,如電場、磁場、聲 場、光場或是速度場。外部信號源可以提供適當形式的信 號(例如:電信號,或光信號,或光輻射)。這些從外部信 -34- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) A7When, on. These substances can be simultaneously or sequentially bound to the surfaces of multiple linkers. The entity molecules to be manipulated are completely bound to the surface of the linker. At least the entity molecules to be manipulated are bound to the surface of the linker. What is more, at least 91%, 92%, 93%, 94% 95%, 96% 97% 98% '99% or just% of the entity molecules to be operated are bound to the surface of the linker. The percentage of bound entity molecules includes binding to the surface of a particular linker or to multiple linkers. When multiple linkers are used, the streptococcal molecules can be simultaneously or sequentially bound to the surface of multiple linkers. The "intracellular solid molecule part" is a solid molecule located in the cell, that is, located in the cytoplasm or organelle substrate, attached to On any cell inner membrane, on the plasma membrane (if present), or on the cell surface, that is, on the outer surface of the plasma membrane or cell wall (if present). Wafers and devices In one aspect, the invention provides a wafer for generating a field, the wafer comprising: a) a substrate; b) at least two built-in structures built on the substrate, any one of which Both built-in structures can be combined with external signal sources to produce a type of physics. Here, the generation of the physical field is achieved by a combination of an external signal source ("external" is relative to the crystal in the present invention) and a built-in structure on the substrate or wafer. The external signal source is connected to the built-in structure on the chip and provides signals to it, so that the built-in structure generates a corresponding physical field, such as an electric field, magnetic field, sound field, light field, or velocity field. An external signal source can provide an appropriate form of signal (for example: electrical signal, or optical signal, or optical radiation). These are from external letters -34- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) A7
號源產生的信號載入到 從而產生相應的物理場 度場。 位於基底或晶片上的内建結構上, ,如電場、磁場、聲場、光場或速 本發明的晶片可以只包厶 4 匕0 一個基展,也可以包含多個矣 構上相互聯繫的基底。例如 ^ 〗如一個電極陣列可以製造在- 二:上,而一個微電磁單元可以製造在第二塊基底上。 ^ 4唬/原相連,可以產生直流或交流1 …磁單元陣列透過與外部電信號源相連,可以產生, 场。兩個基底可以固定在—起形成 是一個電極基底,下部是—個♦斑其卜、、y ^ 0上 個私磁基展。這兩個基底是矣 構上相關的基底,重德# # I伋乂樣的步驟可以形成包含多於兩. 結構上相關的基底的晶片。 #在另-個例子中,兩個晶片可以依次連接在一起,再和 第三塊晶片上結纟,這樣的兩塊基底是結構上相連的基 辰。任何合適的固體基底都可以用於現在的晶片中。例 如,基底材料可以是矽(具有二氧化矽或氮化矽表層或其 他薄的介電層表面)、塑膠、玻璃、陶資、橡膠或聚合 物。基底材料可以是多孔的,也可以是非多孔的。 儘官本發明中的晶片中有至少兩種不同類型的結構可以 產生單一或多種類型的場,但是晶片設計為其上的内建結 構可以產生至少兩種不同類型的物理場。沒有必要使内建 結構的類型數量與透過這些結構產生的物理場的類型數量 相對應。但是,最好使二者的數量相對應。例如,一個晶 片可以包含兩種不同類型的内建結構以產生兩種不同類型 _______-35- 本紙張尺度適用中國國家標準(CNS) Α4规格(210X297公釐) 裝 訂The signal generated by the signal source is loaded to generate the corresponding physical field degree field. The built-in structure located on the substrate or wafer, such as electric field, magnetic field, sound field, light field, or speed. The wafer of the present invention may include only four basic structures, or may include multiple structures that are interconnected. Base. For example, ^〗 For example, an electrode array can be fabricated on -2 :, and a micro-electromagnetic unit can be fabricated on a second substrate. ^ 4 唬 / original connection, can generate DC or AC 1… The magnetic unit array can generate a field by connecting with an external electrical signal source. The two bases can be fixed together to form an electrode base, and the lower part is a private magnetic base. These two substrates are structurally related substrates, and the steps of re-de # # I draw similar steps can form a wafer containing more than two structurally related substrates. #In another example, two wafers can be connected together in turn, and then tied to a third wafer. Such two substrates are structurally connected. Any suitable solid substrate can be used in today's wafers. For example, the substrate material can be silicon (with a silicon dioxide or silicon nitride surface layer or other thin dielectric layer surface), plastic, glass, ceramics, rubber, or polymer. The base material may be porous or non-porous. It is true that there are at least two different types of structures in the wafer of the present invention that can generate a single or multiple types of fields, but the wafer is designed with built-in structures on it to generate at least two different types of physics. It is not necessary to match the number of types of built-in structures with the number of types of physics generated through these structures. However, it is best to match the numbers. For example, a wafer can contain two different types of built-in structures to produce two different types. _______- 35- This paper size applies to China National Standard (CNS) A4 size (210X297 mm) binding
593683 A7593683 A7
34593683 五、發明説明( 電=這種組合之外的至少兩種物理場。在另—個具體實施 ^ m構w選擇㈣產生除了聲波駐波場和均句 靜電场這種組合之外的至少兩種物理場。在另一個ip 施例中、,内建結構可以選擇性的產生除了電場和速度^ 種組合之外的至少兩種物理場。 & :场可以透過基底或晶片上的内建電極結構產生,它的 能量來自於外部電信號源。内建結構是加諸於晶片上的電 極疋件和電極陣列。當適當設計的電極元件和電極陣列上 施加由外部電信號源提供的電信號時,在晶片周圍的空間 7就產生了電場。根據電場是否減—定方向或場的方向 =隨時間改變’可以將電場分為直流電場和交流電場。 兒%也可以分為均勾電場和非均勻電場。這裏電場的‘‘均 勾’,或“非均勻,,是根據電場在空間上的分佈劃分的。對 =非句勻的一次谐波父泥電場(例如電場的頻率隨時間的 k化為正弦波,其頻率從〇 〇〇〇〇1Hz到幾百,如 fGHz),電場的振幅和相位具有非均勻的分佈。交流電場 可=3有多重頻率分量。場的振幅和頻率應該都可以進行 凋即。場隨時間的變化關係除了正弦變化外,也可以是其 :函數關係。用於產生電場的電極結構或電極元件包括: 但並不僅僅限於,如下所示,覆蓋了整個基底表面或基底 ,大部分面積的平面電極(“大部分,,是指如果產生的場 =用來操作實體分子的,則在某一個方向上,電極的尺寸 土少十倍於所操作的的實體分子的尺寸),還有相互交錯 構成域堡狀的電極,平行電極,螺旋電極,梳狀電極,多曰 -37- 張尺度適用少國國家標準Μ規格(· X撕公茇〕 593683 A7 B7 五、發明説明(35 ) 項式電極,可以單個選通的電極陣列其中每個電極元件可 以是圓形、·方形、或其他規則或不規則的形狀。下面的文 章提供了很多可以用於產生電場的電極結構例子:Gale et al.? IEEE Trans. Biomedical Engineering 45: 1459-1469 (1998); Wang, et al.5 Biochim. Biophys. Acta. 1243:185D194 (1995); Wang,et al·,IEEE Trans· Ind· Appl· 33:6600669 (1997); Wang, et al·,Biophys· J· 72:1887-1899 (1997); Wang,et al·,Biophys. J· 74:2689-2701 (1998),Huang,etal·,Biophys· J· 73:1118-1129 (1997) and Yang, et al.5 Anal. Chem. 71(5):911 D918 (1999); Gascoyne,et al·,IEEE Trans. Ind· Apps. 33(3):670CI678 (1997), Becker,et al·,Proc. Natl. Acad· Sci. USA 92:8600864 (1995) and Becker, et al.5 J. Phys. D: Appl. Phys. 27:2659D2662 (1994); Huang,et al·,J· Phys. D: Appl· Phys. 26:152801535 (1993); Wang, et al·, J. Phys. D: Appl. Phys. 26:127801285 (1993);Hawkes,etal.,Microbios· 73:81口86 (1993); and Cheng, et al.? Nat. Biotech. 16:5470546 (1998)); Stephens, et al.5 Bone Marrow Transplantation 18:777D782 (1996)); Washizu, et al.3 IEEE Trans. Ind. Appl. 30:835□ 843 (1994); Green and Morgan, J. Phys. D: Appl. Phys. 30:L41DL44 (1997); Hughes, et al.? Biochim. Biophys. Acta. 1425:1190126 (1998); and Morgan, etal·,Biophys J. 77:516口525 (1999)); Fuhr,etal·,Biochim. Biophys. Acta. 1108:2150233 (1992)); Washizu,etal·,IEEE Trans· Ind· Appl· 26:3520358 (1990); Fiedler,et al·,Anal· Chem· 70:1909D 1915 (1998); and Miiller, et al.5 Biosensors and ___-38-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明(36 )34593683 V. Description of the invention (Electricity = At least two physical fields other than this combination. In another specific implementation ^ m structure w is selected to generate at least two other than the combination of sonic standing wave field and uniform sentence electrostatic field Two types of physics. In another ip embodiment, the built-in structure can selectively generate at least two types of physics in addition to the combination of electric field and velocity ^. &Amp;: The field can pass through the substrate or the wafer. The electrode structure is generated, and its energy comes from an external electrical signal source. The built-in structure is an electrode element and an electrode array that are added to the wafer. When an appropriately designed electrode element and electrode array are applied by an external electrical signal source When an electrical signal is generated, an electric field is generated in the space 7 around the wafer. According to whether the electric field is reduced-a fixed direction or the direction of the field = changes over time, the electric field can be divided into a DC electric field and an AC electric field. Electric field and non-uniform electric field. Here, the "uniform hook", or "non-uniform," of the electric field is divided according to the spatial distribution of the electric field. Pair = non-uniform first-order harmonic parent mud electric field (for example, The frequency of the field is transformed into a sine wave with time, and its frequency ranges from 10000 Hz to several hundred, such as fGHz. The amplitude and phase of the electric field have a non-uniform distribution. The AC electric field can have 3 multiple frequency components. The amplitude and frequency of the field should be able to wither. In addition to the sinusoidal change of the field over time, it can also be a function relationship. The electrode structure or electrode element used to generate the electric field includes: but is not limited to, as follows As shown, a planar electrode covering the entire surface of the substrate or most of the substrate ("Most," means that if the generated field = is used to manipulate a solid molecule, the electrode size in one direction is less than ten Times the size of the entity molecule being operated), as well as staggered electrodes, parallel electrodes, spiral electrodes, and comb electrodes that are intertwined to form a domain-shaped electrode. [Tear the public seal] 593683 A7 B7 V. Description of the invention (35) The term electrode can be individually gated electrode array where each electrode element can be round, square, or other regular or irregular The following article provides many examples of electrode structures that can be used to generate electric fields: Gale et al.? IEEE Trans. Biomedical Engineering 45: 1459-1469 (1998); Wang, et al. 5 Biochim. Biophys. Acta. 1243: 185D194 (1995); Wang, et al ·, IEEE Trans · Ind · Appl · 33: 6600669 (1997); Wang, et al ·, Biophys · J 72: 1887-1899 (1997); Wang, et al ·, Biophys. J. 74: 2689-2701 (1998), Huang, etal ·, Biophys · J. 73: 1118-1129 (1997) and Yang, et al. 5 Anal. Chem. 71 (5): 911 D918 (1999); Gascoyne, et al ·, IEEE Trans. Ind · Apps. 33 (3): 670CI678 (1997), Becker, et al ·, Proc. Natl. Acad · Sci. USA 92: 8600864 (1995) and Becker , et al. 5 J. Phys. D: Appl. Phys. 27: 2659D2662 (1994); Huang, et al., J. Phys. D: Appl. Phys. 26: 152801535 (1993); Wang, et al. , J. Phys. D: Appl. Phys. 26: 127801285 (1993); Hawkes, etal., Microbios 73:81, 86 (1993); and Cheng, et al.? Nat. Biotech. 16: 5470546 (1998 )); Stephens, et al. 5 Bone Marrow Transplantation 18: 777D782 (1996)); Washizu, e t al. 3 IEEE Trans. Ind. Appl. 30: 835 □ 843 (1994); Green and Morgan, J. Phys. D: Appl. Phys. 30: L41DL44 (1997); Hughes, et al.? Biochim. Biophys Acta. 1425: 1190126 (1998); and Morgan, etal., Biophys J. 77: 516, mouth 525 (1999)); Fuhr, etal., Biochim. Biophys. Acta. 1108: 2150233 (1992)); Washizu, etal ·, IEEE Trans · Ind · Appl · 26: 3520358 (1990); Fiedler, et al ·, Anal · Chem · 70: 1909D 1915 (1998); and Miiller, et al. 5 Biosensors and ___- 38-_ 本Paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 593683 A7 B7 V. Description of the invention (36)
Bioelectronics 14:247D256 (1999)); Schnelle, et al., Biochim. Biophys. Acta. 1157:127D140 (1993); Fiedler, et al. (1995); Fuhr5 et al. (1995a); Fiedler, et al. (1998); Miiller, et al. (1999)); Hagedorn,et al·,Electrophoresis 13:49054 (1992); Fuhr,et al·, Sensors and Actuators A: 41:2300239 (1994); Morgan,et al·,J. Micromech. Microeng. 7:65D70 (1997); . Schnelle T.5 et al.? in Biochim· Biophys. Acta. 1157:127-140,1993, pages; Miiller,T·, et al.? in Biosensors and Bioelectronics, 14:247-256, (1999); Fuhr,G.,et al·,in Cellular Engineering. Autumn: 47-57,(1995); Fiedler S. et al·,in . Microsystem Technologies. 2: 1-7,1995; Fiedler, S·,et al·,Anal. Chem. 70: 1909-1915,(1998) o 電極元件,電極結構,電極陣列可以用許多不同的加工 方法加工在基底上,這些方法是微蝕刻和微加工領域中常 見的技術(參考 Rai-Choudhury P· (Editor), Handbook of Microlithography, Micromachining and Microfabrication, Volume 2: Micromachining and microfabrication· SPIE OpticalBioelectronics 14: 247D256 (1999)); Schnelle, et al., Biochim. Biophys. Acta. 1157: 127D140 (1993); Fiedler, et al. (1995); Fuhr5 et al. (1995a); Fiedler, et al. (1998); Miiller, et al. (1999)); Hagedorn, et al ·, Electrophoresis 13: 49054 (1992); Fuhr, et al ·, Sensors and Actuators A: 41: 2300239 (1994); Morgan, et al ·, J. Micromech. Microeng. 7: 65D70 (1997);. Schnelle T.5 et al.? In Biochim · Biophys. Acta. 1157: 127-140, 1993, pages; Miiller, T ·, et al.? in Biosensors and Bioelectronics, 14: 247-256, (1999); Fuhr, G., et al ·, in Cellular Engineering. Autumn: 47-57, (1995); Fiedler S. et al ·, in. Microsystem Technologies. 2: 1-7, 1995; Fiedler, S., et al., Anal. Chem. 70: 1909-1915, (1998) o Electrode elements, electrode structures, and electrode arrays can be processed on the substrate by many different processing methods These methods are common techniques in the field of micro-etching and micro-machining (see Rai-Choudhury P. (Editor), Handbook of Microlithography, Micromachining and Microfabrication, Volume 2: Micromachining and microfabricationSPIE Optical
Engineering Press,Bellingham,Washington,USA (1997))。在許 多情況中,可以使用標準的微加工和微機械加工的方法和 操作規程。一種典型的加工方法是使用單層或多層掩模版 進行光刻。微製造過程包括許多基本的步驟,例如,光刻 掩模生成、金屬沈積、絕緣體沈積、光刻膠沈積、用掩模 和顯影劑在光刻膠層、金屬層或介電層上光刻形成圖案或 結構。電極可以用金屬材料製造,如铭、金、銀、錫、 銅、始、免和石墨,也可以由半導體材料如多孔掺雜碎或 _____-39- _ 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 593683 A7 B7 五、發明説明(37 ) 其他有足夠高的電導率的材料製成。製造電極的基底材料 可以是矽、塑膠、玻璃、陶瓷,或其他固體材料。固體材 料可以是多孔或非多孔的。熟悉微加工和微製造領域的人 可以選擇或決定用於特定電極結構製造的加工規程和材 料。 磁場可以透過不同的方法產生。例如,一項還在申請審 查過程中的美國專利申請案(申請序號為09/3 99,299, 申請曰期為1 9 9 9年9月16日)設計了 一種電磁晶片。通 常,這種具有可單個選通的微電磁單元的電磁晶片由以下 部分組成:一塊基底;在基底上有多個微電磁單元,每個 單元在施加電流後都可以產生磁場;可以選擇性的對單個 單元施加電信號以產生磁場的方法。最好,電磁晶片表面 具有一個可以用於固定一定類型的實體分子或分子的功能 層。在本例中,微電磁單元是位於晶片或基底上的内建結 構,連接到微電磁單元上的電流源是外部電流源。當外部 電流源對微電磁單元施加一定的電流時,在電磁單元周圍 的空間中將會產生磁場。也可以使用其他幾何形狀和結構 的電磁單元。這樣的電磁單元的例子包括,但並不僅僅限 於以下,如下所示·· Ahn,C·,et al·,J· Microelectromechanical Systems· Volume 5: 151-158 (1996); Ahn,C·,et al·,IEEE Trans. Magnetics· Volume 30: 73-79 (1994); Liakopoulos et al., in Transducers 97, pages 485-488, presented in 1997 International Conference on Silid-State Sensors and Actuators, Chicago, June 16-19, 1997; U.S. Patent No. 5,883,760 by Naoshi a/··以上所 ___-40-_ 本纸張尺度適用中國國家榡準(CNS) A4規格(210X297公釐) 38 38593683 五、發明説明( 公開的研究工作和正在申請審查過程中的美國專利申 (申請序號為09/3 99,299,申請日期為1 999年9 \ 二)進-步提供了可以用於在晶片上加工電磁結構的材 料、方法和操作規程。 : 聲場可以透過多種方法產生。例如:用以產生聲場的壓 I轉換器可以加至或製作到一種基底上。一個例子是 Z陶资圓盤作為基底,較圓盤的兩面都以金屬薄膜電極 覆盖。另-個例子是使用恩電陶资圓片作為基底,在陶資 表面沈積上不同幾何形狀的電極陣列。再一個例子是使用 非壓電轉換材料的基底,但在基底的一個表面姓刻出由人 j大1、的槽組成的陣列。然後在槽中沈積上電極材料和壓 %材科從而形成二明治結構的壓電轉換器:電極/壓電 材料/電極。另外一個例子是使用Qeftering,R.在美國專 利6,029,5 1 8中所描述的壓電轉換器相位陣列。在所有的 這些例子中,由壓電材料和電極構成的壓電轉換器都是基 底或晶片上的内建結構。當來自外部信號源的電信號施加 到電極上後,壓電轉換器產生機械位移,這樣就可以在和 基底緊密相連的介質中產生聲#。根據基底的結構和在基 底上製作的結構的不同,可以產生不同類型的聲場。一個 駐波聲場可以在一個包含有壓電材料基底和以合適距離分 開的聲波反射板的小室中產生(e ^心阳如K以吐^ Acoust. Soc. Am. Vol. l〇2 (l), p642-645, July, 1997; Yasuda K. and Kamakura T. Appl. Phys. Lett, V〇l. 71(13), pl771-1773, Sep. 1997)。在另外一個例子中,可以使用行波聲場。又在 -41 A7Engineering Press, Bellingham, Washington, USA (1997)). In many cases, standard micromachining and micromachining methods and operating procedures can be used. A typical processing method is photolithography using a single or multiple reticle. The microfabrication process includes many basic steps, such as photomask formation, metal deposition, insulator deposition, photoresist deposition, and photolithography with a mask and developer on a photoresist layer, metal layer, or dielectric layer Pattern or structure. The electrode can be made of metal materials, such as Ming, gold, silver, tin, copper, graphite, graphite, and semiconductor materials such as porous doped particles or _____- 39- _ This paper size applies to Chinese National Standards (CNS) A4 specification (210X297 mm) 593683 A7 B7 V. Description of the invention (37) Other materials with sufficiently high conductivity. The base material used to make the electrodes can be silicon, plastic, glass, ceramic, or other solid materials. The solid material can be porous or non-porous. Those familiar with the fields of microfabrication and microfabrication can select or decide the machining procedures and materials used for the fabrication of specific electrode structures. The magnetic field can be generated by different methods. For example, a U.S. patent application (application serial number 09/3 99,299, with application date of September 16, 1999) in the process of reviewing an electromagnetic chip is being designed. Generally, such an electromagnetic chip with a single-selectable micro-electromagnetic unit is composed of the following parts: a substrate; there are multiple micro-electromagnetic units on the substrate, and each unit can generate a magnetic field after applying a current; A method of applying an electrical signal to a single unit to generate a magnetic field. Preferably, the surface of the electromagnetic wafer has a functional layer that can be used to fix a certain type of solid molecule or molecule. In this example, the micro electromagnetic unit is a built-in structure located on a wafer or a substrate, and the current source connected to the micro electromagnetic unit is an external current source. When an external current source applies a certain current to the micro electromagnetic unit, a magnetic field will be generated in the space around the electromagnetic unit. Other geometries and geometries can be used. Examples of such electromagnetic units include, but are not limited to the following, as shown below: Ahn, C., et al., J. Microelectromechanical Systems, Volume 5: 151-158 (1996); Ahn, C., et. al ·, IEEE Trans. Magnetics · Volume 30: 73-79 (1994); Liakopoulos et al., in Transducers 97, pages 485-488, presented in 1997 International Conference on Silid-State Sensors and Actuators, Chicago, June 16- 19, 1997; US Patent No. 5,883,760 by Naoshi a / ... the above ___- 40-_ This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 38 38593683 5. Description of the invention (public Research work and U.S. patent application in the process of application examination (application serial number is 09/3 99,299, application date is 9999 2)-further provides materials and methods that can be used to process electromagnetic structures on wafers And operating procedures .: The sound field can be generated by a variety of methods. For example, the voltage I converter used to generate the sound field can be added to or made on a substrate. An example is a Z ceramic disc as a substrate, which is more Metal on both sides Membrane electrode cover. Another example is the use of Enden ceramics wafers as substrates, and electrode arrays of different geometries are deposited on the surface of ceramics materials. Another example is a substrate using a non-piezoelectric conversion material. The surface surname is engraved with an array consisting of the grooves of the person 1 and 1. Then electrode materials and pressure materials are deposited in the grooves to form a piezoelectric converter of the Meiji structure: electrode / piezoelectric material / electrode. The other one An example is the use of a piezoelectric transducer phase array described by Qeftering, R. in U.S. Patent 6,029,5 1 8. In all of these examples, a piezoelectric transducer composed of a piezoelectric material and an electrode is a substrate or a wafer Built-in structure on the surface. When an electrical signal from an external signal source is applied to the electrode, the piezoelectric transducer generates a mechanical displacement, so that sound can be generated in a medium that is closely connected to the substrate. According to the structure of the substrate and the substrate Different structures made on it can generate different types of sound fields. A standing wave sound field can be in a sound wave reflecting plate containing a piezoelectric material substrate and separated by a suitable distance. (E ^ Xinyang Ru K Yitu ^ Acoust. Soc. Am. Vol. 10 (l), p642-645, July, 1997; Yasuda K. and Kamakura T. Appl. Phys. Lett, V 71 (13), pl771-1773, Sep. 1997). In another example, a traveling wave sound field can be used. Again at -41 A7
另^個例子中,聲場可以同時具有駐波和行波分量。 力:二:万!可以產生光場。在一個例子中,内建結構是 加诸於基底或晶片上的光學元件和陣列,外部信一 號源(例如,一個雷射源)。當光信號源產°生:光 ,'内建在晶片或基底上的光學元件和陣列時,在晶片的 ^圍就產生了光場’光場的分佈取決於内建的光學元件和 陣列的幾何結構、大小和組成。在另—個例子中,内建社 構是加於晶片上的光-電元件和陣列,外部信號源是電‘ 號源(如:一個直流電源或一個交流電源)。當來自外部電 信號源的電信號施加到内建的光—電元件和陣列上後,這 些元件和陣列可以產生光,光場在晶片周圍的區域中產 生。 在空間某一區域的介質中的速度場是指在這個區域内移 動的介質的速度分佈。可以有多種方法可以促使介質移 動,以產生一個速度場。在一個實例中,基底表面經過處 理’使表面帶有合適.的電荷或合適的電荷分佈。基底可以 和其他的結構(如:蓋板、襯底)結合以形成一個具有多個 輸入/輸出埠的流體池。當液體介質被導入這個流體池 後’外部笔彳5號源可以在流體池的· 定方向產生電壓。由 電壓:生成的電場可以和基底上的表面電荷(以及/或者在流 體池的其他表面的表面電荷)交互作用從而導致液體介質 的流動。這樣,在流體池的這個位置產生的速度分佈就是 一個速度場。 在另外一個例子中,速度場可以透過在介質中的熱梯度 -42- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7In another example, the sound field may have both standing and traveling wave components. Force: Two: Ten thousand! A light field can be generated. In one example, the built-in structure is an optical element and array added to a substrate or wafer, and an external signal source (e.g., a laser source). When the optical signal source produces: light, 'optical elements and arrays built on the wafer or substrate, a light field is generated around the wafer'. The distribution of the light field depends on the built-in optical elements and arrays. Geometry, size and composition. In another example, the built-in structure is an optical-electrical component and array added to the chip, and the external signal source is an electric source (such as a DC power source or an AC power source). When an electrical signal from an external electrical signal source is applied to the built-in optical-electrical components and arrays, these components and arrays can generate light, and a light field is generated in the area around the wafer. The velocity field in the medium in a certain area of space refers to the velocity distribution of the medium moving in this area. There are several ways to cause the medium to move to produce a velocity field. In one example, the surface of the substrate is treated to cause the surface to have a suitable charge or a suitable charge distribution. The substrate can be combined with other structures (such as cover plates, substrates) to form a fluid pool with multiple input / output ports. When the liquid medium is introduced into this fluid pool, the external pen # 5 source can generate a voltage in a certain direction of the fluid pool. Voltage: The electric field generated can interact with the surface charge on the substrate (and / or the surface charge on other surfaces of the fluid pool) to cause the flow of the liquid medium. In this way, the velocity distribution produced at this position in the fluid pool is a velocity field. In another example, the velocity field can be transmitted through the thermal gradient in the medium. -42- This paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) 593683 A7
或溫度梯度來產生。可以將一個或多個加熱或冷卻元件製 作在基底上。加熱元件可以是薄膜電阻器或細導線電阻器 (如··金屬膜或金屬導線)。冷卻元件可以是帕爾帖 (Peltier)效應接面或帕爾帖元件。這些加熱和冷卻元件都 從外部電信號源得到信號。外部電信號源的電流可以施加 在金屬膜或金屬導線上以產生“熱”,從而形成一個加熱 元件。來自外部信號源的電流可以施加在帕爾帖元件上以 升咼或降低溫度。這樣的加熱和/或冷卻過程將在和加熱 和/或冷卻元件直接或間接連接的介質中產生一個溫度梯 度。溫度梯度導致介質的運動,從而產生速度場。 在另一個例子中,速度場可以透過使用整合在晶片上 的機電兀件/裝置產生。外部信號源可以是電信號源(如: 一個直流電源)。機電裝置可以是一個微加工而成的泵 (如:電磁泵),這個泵可以產生壓力以抽吸流體。機電裝 置也可以是一個微加工而成的閥門,它可以透過開和關導 致液體的流動。機電元件/裝置可以是微加工的細端頭/毛 細管。這些毛細管和細端頭覆蓋上相應的功能性材料、,例 如溫度敏感材料、表面記憶合金。這些毛細管和細端頭可 以進一步和外部電信號源連接,或是與外部物理力耦合, 這樣,提供適當的信號後’毛細管或細端頭就能發I運 動。當在晶片上精心設計和製造的機電元件/裝置施加以 一定的電信號後,這些元件/裝置,或是這些元件/裝置中 的元件將發生某種形式的運動,從而導致與它們直接或間 接連接的介質發生運動。這樣,在介質中產生的速度 593683 A7 ____B7 五、發明説明(41 )~ 是一個速度場。 其他類型的物理場可以透過基底或晶片上的内建結構產 生。所有這些物理場都具有如下的性質:當具有適當性質 的實體分子、微粒或是實體分子-結合物複合物被置入物 理場時,它們將受到相應的物理力。 產生所需物理場的内建結構的大小必須符合微流應用的 需要。例如,内建結構應該是微型結構。通常,微型結構 的基本構造元件的特徵尺寸大約從〇 ·丨微米到2 〇亳米。 最好是在約1微米到約1毫米之間。 當前的晶片在化學、生物化學、生物反應、處理和過程 中可以被廣泛應用。這些反應、處理和過程可以用於生物 醫學的研究、臨床診斷,並可用於藥物開發。本發明中的 晶片可以用於許多過程,如操作實體分子、促進化學/生 物化學/生物反應的進行,控制化學/生物化學/生物過程, 如在一個反應室中進行溫度的控制,以對流體進行控制等 等。可以根據特定的需要設計晶片上的内建結構或内建元 件各種具有不同内建結構的晶片可以根據不同的應用需 要加工或製造成不同的裝置。除如上述的產生物理場的内 建結構和/或元件之外,晶片還可以包括適用於其他特殊 用途的結構元件,或者晶片可以和其他元件一起使用。例 如,如果晶片被用以進行實體分子的操作,晶片可以和其 他的結構單元如盖板、襯底和輸入輸出琿之類一起使用, 以支援和滯留待操作的實體分子。更進—步的是,晶片可 以包括用以固定實體分子的功能層。 本紙張尺度適财@ S家鮮(CNS) A4規格(210 X 297公董) 593683 A7 B7Or temperature gradients. One or more heating or cooling elements can be made on the substrate. The heating element can be a thin film resistor or a thin wire resistor (such as a metal film or metal wire). The cooling element can be a Peltier effect junction or a Peltier element. These heating and cooling elements all receive signals from external electrical signal sources. The current from an external electrical signal source can be applied to a metal film or metal wire to generate "heat", thereby forming a heating element. Current from an external signal source can be applied to the Peltier element to raise or lower the temperature. Such heating and / or cooling processes will create a temperature gradient in the medium directly or indirectly connected to the heating and / or cooling elements. Temperature gradients cause movement of the medium, which produces a velocity field. In another example, the velocity field can be generated by using an electromechanical element / device integrated on a wafer. The external signal source can be an electrical signal source (eg a DC power supply). The electromechanical device can be a micromachined pump (such as an electromagnetic pump) that generates pressure to pump fluid. The electromechanical device can also be a micromachined valve, which can cause the flow of liquid by opening and closing. The electromechanical element / device may be a micro-machined thin end / capillary tube. These capillaries and thin ends are covered with corresponding functional materials, such as temperature-sensitive materials, surface memory alloys. These capillaries and thin ends can be further connected to an external electrical signal source or coupled with external physical forces, so that the capillary or thin ends can be moved after an appropriate signal is provided. When a certain electrical signal is applied to the electromechanical components / devices that are carefully designed and manufactured on the wafer, these components / devices, or the components in these components / devices, will undergo some form of movement, resulting in direct or indirect interaction with them The connected media is in motion. In this way, the velocity generated in the medium is 593683 A7 ____B7 5. The invention description (41) ~ is a velocity field. Other types of physics can be generated through built-in structures on the substrate or wafer. All of these physical fields have the following properties: When physical molecules, microparticles, or solid molecule-conjugate complexes with appropriate properties are placed in the physical field, they will be subject to corresponding physical forces. The size of the built-in structure that produces the required physics must meet the needs of microfluidic applications. For example, the built-in structure should be a microstructure. In general, the basic structural elements of microstructures have a characteristic size of about 0.1 μm to about 20 μm. It is preferably between about 1 micrometer and about 1 millimeter. Current wafers are widely used in chemistry, biochemistry, biological reactions, processing, and processes. These reactions, processes, and procedures can be used in biomedical research, clinical diagnosis, and drug development. The wafer in the present invention can be used in many processes, such as manipulating physical molecules, promoting chemical / biochemical / biological reactions, controlling chemical / biochemical / biological processes, such as controlling temperature in a reaction chamber to control fluids. Take control and more. The built-in structure or built-in components on the wafer can be designed according to specific needs. Various wafers with different built-in structures can be processed or manufactured into different devices according to different application needs. In addition to the built-in structures and / or components that generate physics as described above, the wafer may include structural elements suitable for other special purposes, or the wafer may be used with other elements. For example, if a wafer is used for the manipulation of physical molecules, the wafer can be used with other structural units such as cover plates, substrates, and input / output 珲 to support and retain the physical molecules to be operated. Going one step further, the wafer may include a functional layer to immobilize a solid molecule. This paper is suitable for size @ S 家 鲜 (CNS) A4 size (210 X 297 public director) 593683 A7 B7
另一方面’這個發明涉及到這樣一種結合的形式,其中 結合包括:a)至少兩晶片,每一晶片包含一個基底,和至 少兩獯構建在該基底上的不同的内建結構,其中任何一種 這樣的内建結構都可以與外部信號源組合,以產生一定類 型的物理場;以及b)在晶片之間輸運被操作實體分子的方 法。在這些實例中,每個晶片可以包含至少兩種不同的上 述的、、’ϋ構^對結構施加外部信號時,可以產生一種物理 場’如電場、磁場、聲場、光場和速度場以及其他一些 場0 再一方面,這個發明涉及到一種裝置,其中裝置包含-塊用以支援和滯留待操作實體分子的基底,還有至少兩$ 構建在上述基底上的不同的内部結構,其中任何一種這才 的結構都可以從外部信號源獲得信號,以產生一定類型后 物理場。這些可以產生物理場和物理力6勺内部結構可以^ 於基底上,内部結構也可以内建在晶片外,但結構上仍^ 為裝置上的一個完整部分。 因為本發明的物理場可以使有合適性質的實體分子在由 :物理場時受到力作用,如上述,本發明中的晶片就是, 樣一種本發明的裝置的例子。因此,裝置可以包含可以』 生場的晶片中的任何一個,晶片的组成為:a) 一個基底 =至少兩種不同㈣的位於所述基底上㈣建結構d =何—種這樣的結構都可以從外部信號源獲得信號,; 產生一疋類型的物理場。 只要裝置中的内部結構可以對待操作實體分子施加至》 本紙張尺度適财目國家標準(CNS) A4規格(21〇X 297^jyAnother aspect of this invention relates to a form of bonding, where the bonding includes: a) at least two wafers, each wafer containing a substrate, and at least two different built-in structures built on the substrate, any of which Such a built-in structure can be combined with an external signal source to generate a certain type of physics; and b) a method for transporting manipulated physical molecules between wafers. In these examples, each wafer may contain at least two different types of the above-mentioned, 'a structure, when an external signal is applied to the structure, a physical field' such as an electric field, magnetic field, sound field, light field and velocity field, Some other fields 0 In another aspect, this invention relates to a device, wherein the device includes a block to support and retain the substrate of the entity molecule to be operated, and at least two different internal structures built on the above substrate, any of which One such structure can obtain signals from external signal sources to generate a certain type of post-physics. These internal structures that can generate physical fields and physical forces can be placed on the substrate, and the internal structure can also be built outside the wafer, but the structure is still a complete part of the device. Because the physical field of the present invention can cause a solid molecule with appropriate properties to be subjected to a force during the physical field, as described above, the wafer in the present invention is an example of the device of the present invention. Therefore, the device may include any one of the wafers that can be produced, and the composition of the wafer is: a) a substrate = at least two different structures located on the substrate d = any such structure can be Obtain a signal from an external signal source; Generate a chirped type of physics. As long as the internal structure in the device can be applied to the molecules of the entity to be operated, the paper standard (CNS) A4 specification (21〇X 297 ^ jy)
裝 訂Binding
€ -45- 593683 A7 B7 五、發明説明(43 ) 不同類型的物理力,裝置可以僅僅包含一塊基底。這些裝 置也可以包含多個結構上相連的基底。例如,一個電極陣 列可以被加工在一個基底上,一個微電磁單元可以被加工 在另一基底上。電極陣列和電信號源相連後可以產生直流 或交流電場並由此對不帶電荷或是帶電荷的實體分子施加 電場力(如:直流電場力,和/或常規介電電泳力,和/或行 波介電電泳力)。電磁單元陣列和電信號源相連後,可以 產生磁場並由此對具有一定磁性的實體分子施加磁場力的 作用。兩個基底可以被結合在一起形成一個複合基底,其 中頂部是電極基底,底部是電磁基底。這兩個基底在結構 上是相連的。這一步騾可以被重覆以構建具有超過兩個以 上結構上相連的基底的複合基底。 另一個例子中,兩個基底可以依次連接在一起,並和第 三基底結合。這兩個是結構上相連的基底。再進行這一步 可以形成包含多於兩個結構相連基底的複合基底。 一個電極陣列可以被加工在一個基底上,一個微電磁單 元可以被加工在另一基底上。電極陣列和電信號源相連後 可以產生直流或交流電場並由此對不帶電荷或是帶電荷的 實體分子施加電場力(如:直流電場力,和/或常規介電電 泳力,和/或行波介電電泳力)。電磁單元陣列和電信號源 相連後,可以產生磁場並由此對具有一定磁性的實體分子 施加磁場力的作用。兩個基底可以被結合在一起形成一個 裝置,如:一個流體池,由一個電極基底作為腔的底板, 一個電磁基底作為頂板,而一個襯底用來分隔兩個基底。 -46- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明( 44 )€ -45- 593683 A7 B7 V. Description of the invention (43) Different types of physical forces, the device can contain only a base. These devices may also include multiple structurally connected substrates. For example, an electrode array can be processed on one substrate, and a micro-electromagnetic unit can be processed on another substrate. After the electrode array is connected to the electrical signal source, a DC or AC electric field can be generated, and an electric field force (such as a DC electric field force, and / or a conventional dielectric electrophoretic force) can be applied to uncharged or charged solid molecules, and / or Traveling Wave Dielectric Force). After the electromagnetic unit array and the electric signal source are connected, a magnetic field can be generated and a magnetic field force can be exerted on a solid magnetic molecule. Two substrates can be combined to form a composite substrate, where the top is the electrode substrate and the bottom is the electromagnetic substrate. The two substrates are structurally connected. This step can be repeated to build a composite substrate with more than two structurally connected substrates. In another example, two substrates can be connected together in sequence and combined with a third substrate. These two are structurally connected bases. This step can be repeated to form a composite substrate containing more than two structurally connected substrates. An electrode array can be processed on one substrate, and a micro-electromagnetic unit can be processed on another substrate. After the electrode array is connected to the electrical signal source, a DC or AC electric field can be generated, and an electric field force (such as a DC electric field force, and / or a conventional dielectric electrophoretic force) can be applied to uncharged or charged solid molecules, and / or Traveling Wave Dielectric Force). After the electromagnetic unit array and the electric signal source are connected, a magnetic field can be generated and a magnetic field force can be exerted on a solid magnetic molecule. Two substrates can be combined to form a device, such as: a fluid pool, an electrode substrate as the bottom plate of the cavity, an electromagnetic substrate as the top plate, and a substrate to separate the two substrates. -46- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 593683 A7 B7 V. Description of the invention (44)
這兩個基底在裝置中在結構上是相連的。這個裝置(如流 體池)進一步應該包含輸入輸出埠,以允許组分導入= 出流體池。 又一個例子中,一個電極陣列可以被加工在一個基底 上。電極陣列和電信號源相連後可以產生直流或交流^場 並由此對不帶電荷或是帶電荷的實體分子施加電場: (如:直流電場力,和/或常規介電電泳力,和/或行波介電 電泳力)。一個微加工的透鏡陣列或濾光鏡或其他的光^ 元件可以被加工到另一個基底上。加工好的光學元件陣二 同外部光學信號源相連可以產生光學輻射場,並由此對實 體分子施加光輻射力。這兩個基底可以一起使用以組成: 個裝置,如:一個流體池,由包含電極陣列的基底作為底 板和包含光學陣列的基底作為頂板以及用來分隔的襯底組 成。這兩個基底在裝置中在結構上是相連的。這個裝置 (如流體池)進一步應該包含輸入輸出埠,以允許實體分子 導入或移出流體池。 任何合適的固體基底都可被用於本發明。例如,基底材 料可以疋矽(具有二氧化矽或氮化矽的表面或其他絕緣薄 層表面)、塑膠、玻璃、陶瓷、橡膠或多聚體。基底材料 可以是多孔或是緻密的。 儘管本發明中的晶片中有至少兩種不同類型的内部結構 可以產生單一或多種類型的場,但是晶片設計為其上的内 部結構可以產生至少兩種不同類型的物理場。沒有必要使 内部結構的類型數量與透過這些結構產生的物理場的類型 ______-47- 本纸張尺度適用中國國家標準(CNS) A4規格(21〇x297公釐) 593683 A7 B7 五、發明説明(45 數量相對應。但是,最好使二者 ]致1相對應。例如,一 個印片可以包含兩種不同類型的 類型的物理場,或者是包^種3結構以產生兩種不同 Λ有疋已口一種不同類型的内部結構以產 生三種不同類型的物理場,或者是包含四種不同類型的内 部結構以產生四種不同類型的物理場,或者是包含四種以 上不同類型的内部結構以產生四種以上不同類型的物理 場。多種類型的力可以作用在—個實體分子或一類實體分 子上。另外,多種類型物理力可以作用在多種實體分子 上。這樣’當—個裝置包含兩種(三種、四種或超過四種) 不同類型的可以產生兩種(三種、四種或超過四種)不同類 型物理力的不同類型内部結構時,並不—定有兩種(三 種、四種或超過四種)不同類型的物理力作用在相同的實 體分子或相同類型的實體分子上。 在這整個應用中有幾點應注意。當提到裝置的“内部,, 結構或晶片上的“内建,,結構能夠產生物理力和/或物理 場時,或這些結構產生物理力和/或物理場時,這些結構 疋同外部信號源相連的。在這裏,術語“力,,或“物理 力 總是指作用在這些實體分子上的“力,,或“物理 力,“力”或“物理力”是透過場的作用產生的,由實 體分子本身的性質決定。因此,當給定了 一個場或物理 場’為了在實體分子上產生物理力,這些實體分子必須具 有一定的性質。某些類型的場可以在多種具有不同性質的 實體分子上都產生力的作用,而某些類型的場也許只可以 在對一些有限類型的實體分子施加力的作用。例如,磁場 L__ -48- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 46 具體實施例中 力,女7電場力 具體實施例中 力,如電場力 具體實施例中 、發明説明( 二此在磁性貫體分子或具有一定磁性的實體分子上產生力 或磁%力’而不適用於其他類型的微粒,如聚苯乙烯珠。 :=一万面,一個非均一的電場可以在許多種不同類型的 男體分子上施加物理力的作用,如聚苯乙烯珠、細胞,還 =磁珠等等。其實,並不必須要求物理場在不同類型實體 刀子上都產生力的作用,但物理場必須至少可以在一種實 體分子和一個實體分子上產生力的作用。 廷些内部結構可以採用任何適宜的形式集成在晶片上。 例如’内部結構可以是單個的單元料,它可以位於晶片 /部77或整個晶片。或者是,這種加王結構可以包含一 ,微單元。這樣的微單元可以部分的或完全的單個選通或 = 當 '組微單元應用於晶片上,本發明同時提供 政早7L選擇性施加信號的方法。 :月的裝置可以專門設計以產生所需的物理力,最好 至少兩種類型的物理力。在-個特別的具體實施例 士構可以選擇性的產生至少兩種物理力,如電場 二=力/聲場力、機械力和光場輕射力。在另-個具 二了内部結構可以選擇性的產生至少兩種物理 如❻力、磁場力、聲場力和光場輕射力。在另一個 内邵結構可以選擇性的產生至少兩種物理 磁場力、光場輻射力和機械力。在另一個 内:結構可以選擇性的產生至少兩種物理 聲%力、光場輕射力和機械力。在另一個 内部結構可以選擇性的產生至少兩種物理These two substrates are structurally connected in the device. This device (such as a fluid cell) should further include input and output ports to allow component introduction = out of the fluid cell. In yet another example, an electrode array can be processed on a substrate. After the electrode array is connected to the electrical signal source, a DC or AC field can be generated and an electric field can be applied to the uncharged or charged solid molecules: (eg, DC electric field force, and / or conventional dielectric electrophoretic force, and / Or traveling wave dielectric electrophoretic force). A micro-machined lens array or filter or other light element can be processed onto another substrate. The processed optical element array 2 is connected with an external optical signal source to generate an optical radiation field, and thereby exerts a light radiation force on the physical molecules. These two substrates can be used together to form: a device, such as a fluid pool, consisting of a substrate containing an electrode array as a bottom plate, a substrate containing an optical array as a top plate, and a substrate for separation. These two substrates are structurally connected in the device. This device (such as a fluid cell) should further include input and output ports to allow physical molecules to be introduced into or removed from the fluid cell. Any suitable solid substrate can be used in the present invention. For example, the base material can be silicon (surface with silicon dioxide or silicon nitride or other thin surface of insulation), plastic, glass, ceramic, rubber, or polymer. The base material can be porous or dense. Although there are at least two different types of internal structures in the wafer of the present invention that can generate a single or multiple types of fields, the internal structure of a wafer designed thereon can generate at least two different types of physical fields. It is not necessary to make the number of types of internal structures and the types of physical fields generated by these structures ______- 47- This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 593683 A7 B7 V. Description of the invention (45 corresponds to the number. However, it is better to make the two] correspond to 1. For example, a print can contain two different types of physics, or it can include 3 kinds of structures to produce two different types. I have already described a different type of internal structure to generate three different types of physics, or include four different types of internal structures to generate four different types of physics, or include more than four different types of internal structures to Generate more than four different types of physical fields. Multiple types of forces can act on one entity molecule or one type of entity molecule. In addition, multiple types of physical forces can act on multiple entity molecules. In this way, when a device contains two (Three, four, or more than four) Different types can produce two (three, four, or more than four) different types of physical forces When it comes to the type of internal structure, it does not mean that there are two (three, four, or more than four) different types of physical forces acting on the same entity molecule or the same type of entity molecule. There are several points in this entire application. Note. These structures are different when referring to the "internal," structures, or "built-in," on a wafer, of structures that generate physical forces and / or physical fields, or when these structures generate physical forces and / or physical fields. An external signal source is connected. Here, the term "force," or "physical force" always refers to the "force," or "physical force," or "physical force," which acts on these physical molecules through the action of a field The generation is determined by the nature of the entity molecule. Therefore, when a field or physical field is given, in order to generate physical forces on the entity molecule, these entity molecules must have certain properties. Certain types of fields can have multiple properties. The physical molecules of different properties generate forces, and some types of fields may only apply forces to a limited number of solid molecules. For example, magnetic fields L__ -48- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 46 in the specific embodiment of the force, female 7 electric field force in the specific embodiment of the force, such as the electric field force in the specific embodiment, the description of the invention (Second, force or magnetic force is generated on magnetic penetrating molecules or solid molecules with certain magnetic properties. It is not suitable for other types of particles, such as polystyrene beads.: = 10,000 faces, a non-uniform electric field can Apply physical force on many different types of male molecules, such as polystyrene beads, cells, magnetic beads, etc. In fact, it is not necessary to require physical fields to exert force on different types of physical knives. However, the physical field must be able to generate forces on at least one solid molecule and one solid molecule. These internal structures can be integrated on the wafer in any suitable form. For example, the 'internal structure may be a single unitary material, which may be located on the wafer / section 77 or the entire wafer. Or, this king structure can contain one microcell. Such microcells can be partially or completely single-gated or = When a group of microcells is applied to a wafer, the present invention also provides a method for selective application of signals as early as 7L. The device of the month can be specifically designed to generate the required physical force, preferably at least two types of physical force. In a particular embodiment, the structure can selectively generate at least two kinds of physical forces, such as electric field two = force / sound field force, mechanical force, and light field light shooting force. In the other one, the internal structure can selectively generate at least two kinds of physics such as chirp force, magnetic field force, sound field force, and light field light force. In another inner Shao structure, at least two kinds of physical magnetic field force, light field radiation force and mechanical force can be selectively generated. In another: the structure can selectively generate at least two physical acoustic force, light field light force, and mechanical force. In another internal structure can selectively produce at least two physical
593683 A7 --- , B7 五、發明説明(μ ) 產生電場力的内部結構可以位於基底之外,基底是裝置 的部力^ #支援和滞留待操作實體分子的作用。這些例 子包括’但不僅僅限於,用細導線(如··直徑為! 〇微米到 2000微米)製成的電極元件。這些電導線可以被基底材料 包裹或位於一個緊貼著基底的特殊位置。電線在結構上同 包含基底的裝置相it,並且是裝置的内部結構。當電信號 犯加到货些導線上時,電場在導線的周圍區域產生,包括 在基底上或貼近基底的區域。因此,當具有合適性質的實 體分子被引入時,電場力就作用於這些實體分子上。電場 力可以被分為直流電場力、常規介電電泳力和行波介電電 泳力。這些力將在後面詳細描述。 磁場力可以用裝置中的任何内部結構產生,只要該結構 和外部信號源相連時可以產生相應的磁場力。產生磁場力 的内部結構可以位於基底上,基底是裝置的一部分起著支 援和滞留待操作實體分子的作用。只要裝置包括上述的基 底,那麼位於基底上用以產生磁場力的内部結構包括所有 基底上的“内建” I吉構。那些“内建,,肖構的例子包括, 但不僅僅限於,電磁單元陣列,此陣列可見於正在申請審 批過程中的美國專利申請案(申請序號為09/3 99,299, 申請曰期為1999年9月16曰)。 產生磁場力的内部結構可以位於基底之外,基底是裝置 的一部分起著支援和滯留待操作實體分子的作用。這些例 子包括,但不僅僅限於,由電導線(如直徑為1〇微米到 2 000微米)包裹著的磁核(如由鐵磁材料製成)組成的電磁 -51 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683593683 A7 ---, B7 V. Description of the Invention (μ) The internal structure that generates the electric field force can be located outside the base, which is the internal force of the device ^ # Support and retain the role of the entity molecules to be operated. These examples include, but are not limited to, electrode elements made of thin wires (e.g., a diameter of! 0 microns to 2000 microns). These electrical leads can be wrapped in a base material or located in a special location next to the base. The wires are structurally identical to the device containing the substrate, and are the internal structure of the device. When electrical signals are applied to these wires, an electric field is generated in the surrounding areas of the wires, including on or near the substrate. Therefore, when physical molecules with appropriate properties are introduced, electric field forces act on these physical molecules. Electric field forces can be divided into DC electric field forces, conventional dielectric electrophoretic forces, and traveling wave dielectric electrophoretic forces. These forces will be described in detail later. The magnetic field force can be generated by any internal structure in the device, as long as the structure can generate the corresponding magnetic field force when connected to an external signal source. The internal structure that generates the magnetic field force can be located on the substrate, which is part of the device and supports and retains the molecules of the entity to be operated. As long as the device includes a substrate as described above, the internal structure on the substrate used to generate the magnetic field force includes all "built-in" I-structures on the substrate. Examples of those "built-in," structures include, but are not limited to, an array of electromagnetic cells. This array can be found in the pending U.S. patent application (application serial number 09/3 99,299, the application date is (September 16, 1999). The internal structure that generates the magnetic field force can be located outside the substrate, which is part of the device and supports and retains the molecules of the entity to be operated. These examples include, but are not limited to, electrical wires ( Such as the diameter of 10 microns to 2 000 microns) wrapped magnetic core (such as made of ferromagnetic materials) composed of electromagnetic -51-This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 593683
凡件。這些電磁單元位於-個緊貼著基底的特殊位置。電 磁單元在結構上同包含基底的裝置相連,並且是裝置的内 邵結構°當電信號施加到這些電磁單元上時,磁場在導線 的周圍區域產生’包括在基底上或貼近基底的區域。因 此、,當具有合適性質的實體分子被引入時,磁場力就作用 於每些貫體分子上。這些磁場力將在後面詳細描述。 聲場力可以由裝置中的任何内部結構產生,只要該結構 和外部信號源相連時可以產生聲場力。產生聲場力的内部 結構可以位於基底上,基底是裝置的_部分起著支援和滞 留待操作實體分子的作用。只要裝置包括上述的基底,那 位糸基底上用以產生聲場力的内部結構包括所有基底上 的“内建”結構。那些内建結構的例子包括,但不僅僅限 於用壓1^陶瓷圓盤作為基底,陶_瓷的表面沈積以不同幾 何形狀的電極陣列。 產生聲場力的内部結構可以位於基底之外,基底是裝置 的一部分起著支援和滯留待操作實體分子的作用。這樣的 例子包括’但不僅僅限於,由壓電材料或其他方式形成的 聲波源。聲波源可以定位在一個緊貼著基底的特殊位置。 聲波源在結構上同包含基底的裝置的基底相連。聲波源是 裝置的内部結構。當外部信號(如來自電源的電壓信號)作 用於聲波源時’聲場在聲波源的周圍區域產生,包括在基 底上或貼近基底的區域。因此,當具有一定性質的實體分 子被引入時’聲場力就作用於這些實體分子上。這些聲場 力將在後面詳細描述。 - — ____- 52 - 本纸張尺度適用中國國豕標準(CNS) A4規格(210X297公爱)Everything. These electromagnetic units are located in a special position next to the substrate. The electromagnetic unit is structurally connected to the device containing the substrate, and is the internal structure of the device. When an electrical signal is applied to these electromagnetic units, a magnetic field is generated in the surrounding area of the wire, including on or near the substrate. Therefore, when entity molecules with appropriate properties are introduced, magnetic field forces act on each of the molecules. These magnetic field forces will be described in detail later. The sound field force can be generated by any internal structure in the device, as long as the structure is connected to an external signal source, the sound field force can be generated. The internal structure that generates the sound field force can be located on the substrate, which is the part of the device that supports and retains the molecules of the entity to be operated. As long as the device includes the above-mentioned substrates, the internal structure on that chirped substrate to generate sound field forces includes the "built-in" structures on all substrates. Examples of those built-in structures include, but are not limited to, using pressed ceramic discs as substrates, and ceramics on the surface are deposited with electrode arrays of different geometries. The internal structure that generates the sound field force may be located outside the substrate, which is part of the device and plays a role of supporting and retaining the molecules of the entity to be operated. Such examples include, but are not limited to, acoustic wave sources formed from piezoelectric materials or other means. The sound wave source can be located in a special position close to the substrate. The acoustic source is structurally connected to the substrate of the device containing the substrate. The sound source is the internal structure of the device. When an external signal (such as a voltage signal from a power source) is applied to a sound wave source, the sound field is generated in the surrounding area of the sound wave source, including on or near the substrate. Therefore, when solid molecules with certain properties are introduced, the sound field force acts on these solid molecules. These sound field forces will be described in detail later. -— ____- 52-This paper size applies to China National Standard (CNS) A4 (210X297 public love)
50 五、發明説明( 光場力可以由裝置中的任何内部結構產生,只要該結構 和外部信號源相連時可以產生光場力。產生光場力的内部 結構可以位於基底上,基底是裝置的一部分起著支援和滯 留待操作實體分子的作用。只要裝置包括上述的基底,那 麼位於基底上用以產生光場力的内部結構包括所有基底上 的内建結構。那些内建結構的例子包括,但不僅僅限 於,可以集成在基底上的光學和光一電元件或陣列。 產生光場力的内部結構可以位於基底之外,基底是裝置 的一部分起著支援和滯留待操作實體分子的作用。這樣的 例子包括,但不僅僅限於,由濾鏡、透鏡等光學元件組成 的陣列製作在光學基底上的光學設備。光學設備可以定位 在一個緊貼著基底的特殊位置。光學設備在結構上同包含 基辰的裝置的基底相連。光學設備是裝置的内部結構。當 外部光信號作用於光學設備時,光場在光學設備的周圍^ 域產生,包括在基底上或貼近基底的區域。因此,當具有 一定性質的實體分子被引入時,光場力就作用於這二實體 分子上。這些光場力將在後面詳細描述。 ' 機械力可以由裝置中的任何内部結構產生,只要該結構 和外部信號源相連時可以產生機械力。產生機械力的内部 、⑺構可以位於基底上,基底是裝置的一部分起著支援和滞 留待操作實體分子的作用。只要裝置包括上述的基底,那 麼位於基底上用以產生機械力的内部結構包括所有基底上 的内建”結構。那些内建結構的例子包括,但不僅僅限 於,不同類型的集成在基底上的電機械元件、集成在基底 L-______-53- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 59368350 V. Description of the invention (The light field force can be generated by any internal structure in the device, as long as the structure can generate the light field force when it is connected to an external signal source. The internal structure that generates the light field force can be on the substrate, which is the device One part plays the role of supporting and retaining the solid molecules to be operated. As long as the device includes the above-mentioned substrate, the internal structure on the substrate for generating the light field force includes the built-in structures on all the substrates. Examples of those built-in structures include But it is not limited to optical and optical-electrical elements or arrays that can be integrated on the substrate. The internal structure that generates the light field force can be located outside the substrate. The substrate is part of the device and supports and retains the molecules of the entity to be operated. Examples include, but are not limited to, optical devices made of an array of optical elements such as filters and lenses on an optical substrate. Optical devices can be positioned in a special position close to the substrate. Optical devices are structurally identical to The base of Jichen's device is connected. The optical equipment is the internal structure of the device. When an optical signal is applied to an optical device, a light field is generated in the surrounding region of the optical device, including on or near the substrate. Therefore, when a solid molecule with certain properties is introduced, the light field force acts on these On solid molecules. These light field forces will be described in detail later. 'Mechanical forces can be generated by any internal structure in the device, as long as the structure is connected to an external signal source, mechanical forces can be generated. The internal, structure that generates the mechanical force can It is located on the substrate. The substrate is a part of the device that supports and retains the molecules of the entity to be operated. As long as the device includes the above substrate, the internal structure on the substrate to generate mechanical forces includes all built-in structures on the substrate. Examples of those built-in structures include, but are not limited to, different types of electromechanical components integrated on the substrate, integrated on the substrate L -______- 53- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297) %) 593683
上的加熱和/或冷卻元件和基底上的特殊表面構造。 產生機械力的内部結構可以位於基底之外,基底是裝 置的一部分起著支援和滞留待操作實體分子的作甩。這樣 的例子包括,但不僅僅限於,電機設備例如閥門、泵等。 電機械設備可以定位在一個緊貼著(with respect t〇)基底的 特殊位置,並在結構上同包含基底的裝置的基底相連。機 械設備是裝置的内部結構。當外部電信號施加在電機械設 備上時,電機械設備或電機械設備内的某一部分將發生運 動,從而導致和電機械設備直接或間接相連的介質的運 動。介質的運動產生一個速度場。因此,當具有一定性質 的貝體分子被引入時’機械力就作用於這些實體分子上。 這些機械力將在後面詳細描述。 其他類型的物理力可由裝置中的任何内部結構產生,只 要該結構和外部信號源相連時可以產生這樣的物理力。根 據這些力的性質和裝置的構造,產生這些物理力的内部結 構可以位於基底上,基底是裝置的一部分起著支援和滯留 待操作實體分子的作用。 產生所需物理場的内建結構的大小必須符合微流應用的 需要。例如,内建結構應該是微型化的。通常,微型結構 的基本構造元件的特徵尺寸大約從0 ·丨微米到2 〇毫米。 最好是在1微米到1毫米之間。 當前的晶片在化學、生物化學、生物反應、處理和過程 中可以被廣泛應用。這些反應、處理和過程可以用於生物 醫學的研究、臨床診斷,並可用於藥物開發。本發明中的 _______- 54 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂Heating and / or cooling elements and special surface configurations on the substrate. The internal structure that generates the mechanical force can be located outside the substrate, which is part of the device that plays the role of supporting and retaining the solid molecules to be operated. Such examples include, but are not limited to, electrical equipment such as valves, pumps, and the like. The electromechanical device can be positioned in a special position with respect to the substrate and structurally connected to the substrate of the device containing the substrate. Mechanical equipment is the internal structure of the device. When an external electrical signal is applied to an electromechanical device, the electromechanical device or a part of the electromechanical device will move, resulting in the movement of a medium directly or indirectly connected to the electromechanical device. The motion of the medium creates a velocity field. Therefore, when mollusc molecules with certain properties are introduced, the mechanical force acts on these solid molecules. These mechanical forces will be described in detail later. Other types of physical forces can be generated by any internal structure in the device, as long as the structure is connected to an external signal source. According to the nature of these forces and the structure of the device, the internal structure that generates these physical forces can be located on a substrate, which is part of the device that supports and retains the molecules of the entity to be manipulated. The size of the built-in structure that produces the required physics must meet the needs of microfluidic applications. For example, the built-in structure should be miniaturized. In general, the characteristic dimensions of the basic structural elements of a microstructure are from about 0.1 μm to about 20 mm. It is preferably between 1 micrometer and 1 millimeter. Current wafers are widely used in chemistry, biochemistry, biological reactions, processing, and processes. These reactions, processes, and procedures can be used in biomedical research, clinical diagnosis, and drug development. _______- 54 in the present invention-This paper size applies to China National Standard (CNS) A4 (210X 297 mm) binding
線- 593683 A7 B7 五、發明説明( 52 裝 曰日片可以用於#多過程,如操作實體分子、促進化學/生 物化學/生物反應的進行,控制化學/生物化學/生物過程, =在個反應至中進行溫度的控制,以對流體進行控制等 等可以根據特疋的需要設計晶片上的内建結構或内建元 牛各種八有不同内建結構的晶片可以根據不同的應用需 要加工或製造成不同的裝置。除如上述的產生物理場的内 建、’σ構和/或元件之外’晶片還可以包括適用於其他特殊 用途的結構元件,或者晶片可以和其他元件一起使用。例 如,如果j片被用以進行實體分子的操作,晶片可以和其 他的結構單元如蓋板、襯底和輸人輸出埠之類一起使用, 以支援和滯留待操作的實體分子。更進一步的是,晶片可 以包括用以可以内建實體分子的功能層。 C.操作方法 訂 線· 當實體分子在晶片上參與了一定的物理、化學、生物、 生物物理或生物化學過程,就可以使用本發明設計的晶片 和裝置對其進行操作。待操作的實體分子可以是細胞、細 胞器、病毒、分子或它們的聚集體。待操作的實體分子可 以是純物質或存在於混合物中,其中目標實體分子只是混 合物中的一種物質。例如,來自白血病病人二二中的== 胞和來自患有固態腫瘤的病人的固態組織中的癌細胞都可 以是待操作的實體分子。相似地’血液中的各種血細胞如 紅細胞和白細胞也可以是待操作的實體分子。 一方面,本發明涉及了一種操作一種實體分子的方法, 此方法包括:a)把一種實體分子引入—個包含一個基底和 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) -55- 53^3683 五 、發明説明( 至少兩種不同類型的内部結構的裝置進行操作, :結構’每個都可以同外部信號源相連,產生 允許所述的裝置的内部結構同一個外部= =相^以對實體分子施加至少兩種不同的物理力,二 件孩貫體分子被所述的物理力操作。 使 &至少兩種不同類型的物理力,,可以依次或 了體分子上。“至少兩種不同類型的物理力:▼以::: 冋時施加到單個實體分子上。例如,_個可 ^ 電電泳力的裝置可以同時施加這兩種類型= 二;亡:如細胞或,粒,,裝置也可以按以下程 罘,開啟聲場力發生元件,使實I#八^^ 胞’微粒)在特定時間内受到聲場力;第=子= 發生元件’開啟常規介電電泳力發 == (如細胞,微粒)受到常規介電電泳力〇 刀子 到多‘=種Γ類型的物理力”也可以依次或同時施加 上。例如’—個可以產生聲場力和常規介 裝置可以同時施加兩種不同類型的力於兩種辨 如細胞和微珠。因此,兩種實體分子都 生_力和行波介電電泳力的裝置可以同時 奋 :分::如磁珠和某些類型的生物細胞)施加相:的“ k樣,磁珠僅僅受到磁場力的作用,而生物細胞僅僅 波介電電泳力的作用。再一個例子 %力和行波介電電泳力的裝置可以按如下程式操作第 593683 A7 B7 五、發明説明(^ ) 54 一,開啟磁場力發生元件,使磁珠在特定的時間内受到磁 場力的作用;第二,關閉磁場力發生元件,開啟行波介電 電泳力發生元件,使生物細胞受到行波介電電泳力的作 用。 儘管本方法也可以用來每次操作一種實體分子,但本方 法最好是用以同時操作多種實體分子。在一些應用中,待 操作的實體分子可以從混合物中選擇性地進行操作。有選 擇地操作是指待操作的實體分子的操作過程是有選擇的, 透過受到與其他實體分子不同的操作力或是經歷了和其他 實體分子不同的操作過程,待操作的實體分子可以從混合 物分離出來。在另外一些應用中,待操作的實體分子組成 混合物,並且整個混合物都被操作。 待操作的實體分子包括兩類:可_以直接透過各種物理力 操作的實體分子;不可以直接透過物理力操作,但可以透 過操作實體分子-結合物複合體來操作的實體分子。在特 定的具體實施例中,被操作的實體分子可以是細胞、細胞 器、病毒、分子或它們的聚集體或複合體。 現有的方法可以用於各種類型的操作。操作的例子包 括,但不僅僅限於,對實體分子的輸運、聚焦、富集、濃 縮、聚集、捕獲、推斥、懸浮、分離、分鶴、分別,以及 實體分子線性的或其他方向上的運動。 使用本方法的裝置必須在内部包含兩個或多個不同類型 的結構,每個結構都能與外部信號源連接,從而在上述實 體分子上施加某種類型的物理力。本方法中可以使用任何 _-57-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明( 一種物理力。在一個特定的具體實施例中,裝置的内部結 構可以施加給待操作的實體分子以電場力(例如直流電場 力、常規介電電泳力及行波介.電電泳力)、磁場力、聲場 力、光場力和機械力中的至少兩種物理力。在一個特定的 具體實施例中,裝置的内部結構可以施加給待操作的實體 分子以電場力(例如直流電場力、常規介電電泳力及行波 介電電泳力)、磁場力、聲場力、光場力中的至少兩種物 理力。在一個特定的具體實施例中,裝置的内部結構可以 施加給待操作的實體分子以電場力(例如直流電場力、常 規介電電泳力及行波介電電泳力)、磁場力、聲場力和機 械力中的至少兩種物理力。在一個特定的具體實施例中, 裝置的内部結構可以施加給待操作的實體分子以電場力 (例如直流電場力、常規介電電泳力及行波介電電泳力)、 磁場力、光場力和機械力中的至少兩種物理力。在一個特 定的具體實施例中,裝置的内部結構可以施加給待操作的 實體分子以電場力(例如直流電場力、常規介電電泳力及 行波介電電泳力)、聲場力、光場力和機械力中的至少兩 種物理力。在一個特定的具體實施例中,裝置的内部結構 可以施加給待操作的實體分子以磁場力、聲場力、光場力 和機械力中的至少兩種物理力。 在另一個特定的具體實施例中,裝置的内部結構可以施 加給待操作的實體分子以不包括光場力和介電電泳力組合 在内的至少兩種物理力。在另一個特定的具體實施例中, 裝置的内部結構可以施加給待操作的實體分子以不包括由 _-58- 本纸張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂Line-593683 A7 B7 V. Description of the invention (52 The Japanese film can be used for #multiple processes, such as manipulating physical molecules, promoting chemical / biochemical / biological reactions, controlling chemical / biochemical / biological processes, = Control the temperature during the reaction to control the fluid, etc. You can design the built-in structure on the wafer or the built-in Yuanniu according to the needs of the special requirements. Various wafers with different built-in structures can be processed or processed according to different application needs. Manufactured into different devices. In addition to the built-in, 'sigma structure and / or components' that produce the physics as described above, the wafer may also include structural elements suitable for other special purposes, or the wafer may be used with other elements. For example If chip j is used for the operation of physical molecules, the chip can be used with other structural units such as cover plates, substrates, and input and output ports to support and retain the physical molecules to be operated. Furthermore, The chip can include a functional layer that can be used to build solid molecules. C. Operation method for setting the line · When the solid molecules participate in a certain object on the wafer Physical, chemical, biological, biophysical or biochemical processes, the wafers and devices designed by the present invention can be used to operate them. The entity molecules to be operated on can be cells, organelles, viruses, molecules or their aggregates. The entity molecule that is manipulated can be pure or present in a mixture, where the target entity molecule is only one substance in the mixture. For example, == cells from leukemia patients 22 and cells from solid tissues of patients with solid tumors Cancer cells can all be solid molecules to be manipulated. Similarly, various blood cells in the blood such as red blood cells and white blood cells can also be solid molecules to be manipulated. In one aspect, the present invention relates to a method for operating a solid molecule, and the method includes : A) Introduce a kind of entity molecule-one containing a substrate and the paper size applicable Chinese National Standard (CNS) A4 specification (210 X 297 mm) -55- 53 ^ 3683 5. Description of the invention (at least two different types of The internal structure of the device is operated, and the structure: each can be connected to an external signal source to generate permission The internal structure of the device is the same as that of the external part, so that at least two different physical forces are applied to the entity molecules, and the two child molecules are operated by the physical forces. Make & at least two different types of Physical forces can be applied sequentially or on body molecules. "At least two different types of physical forces: ▼ to ::: are applied to a single entity molecule at a time. For example, an electrophoretic device can simultaneously apply this Two types = two; death: such as cells or granules, the device can also turn on the sound field force generating element according to the following process, so that the real ## ^^ cell 'particles) receive the sound field force within a specific time; No. = Generating element 'turn on conventional dielectrophoresis force == (such as cells, particles) subject to conventional dielectrophoresis force 0 knife to many' = type Γ type of physical force "can also be applied sequentially or simultaneously. For example, one can generate a sound field force and a conventional media device can simultaneously apply two different types of force to two discriminating cells such as cells and beads. Therefore, a device that generates both force and traveling wave dielectrophoretic force for two kinds of entity molecules can work simultaneously: points :: such as magnetic beads and certain types of biological cells) Application phase: "k-like, magnetic beads are only subjected to magnetic fields The effect of force is only applied to biological cells by wave electrophoretic force. Another example of a device for% force and travelling wave electrophoretic force can be operated according to the following procedure. 593683 A7 B7 V. Description of the invention (^) 54 1. Turn on The magnetic field force generating element causes the magnetic beads to be subjected to the magnetic field force within a specific time; second, the magnetic field force generating element is turned off, and the traveling wave dielectrophoretic force generating element is turned on, so that biological cells are subjected to the action of the traveling wave dielectric electrophoresis force. Although this method can also be used to operate one entity molecule at a time, this method is best used to operate multiple entity molecules at the same time. In some applications, the entity molecules to be operated can be selectively operated from a mixture. Selective operation means that the operation process of the entity molecule to be operated is selective, either by receiving a different operation force from other entity molecules or experiencing other entity molecules. In the same operation process, the entity molecules to be operated can be separated from the mixture. In other applications, the entity molecules to be operated constitute a mixture, and the entire mixture is operated. The entity molecules to be operated include two types: directly Physical molecules operated by various physical forces; physical molecules that cannot be operated directly by physical forces, but can be operated by operating physical molecule-conjugate complexes. In specific embodiments, the manipulated physical molecules may be cells , Organelles, viruses, molecules or their aggregates or complexes. Existing methods can be used for various types of operations. Examples of operations include, but are not limited to, transport, focusing, enrichment, and concentration of solid molecules , Aggregation, capture, repulsion, suspension, separation, separation, separation, and movement of solid molecules in linear or other directions. The device using this method must internally contain two or more different types of structures, each The structure can be connected to an external signal source, so that a certain type of Physical force. Any _-57-_ can be used in this method. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 593683 A7 B7. 5. Description of the invention (A physical force. In a specific specific In an embodiment, the internal structure of the device can be applied to the entity molecules to be operated with electric field force (such as DC electric field force, conventional dielectric electrophoretic force and traveling wave dielectric. Electrophoretic force), magnetic field force, sound field force, light field force, and mechanical At least two physical forces in the force. In a specific embodiment, the internal structure of the device can be applied to the physical molecules to be operated with an electric field force (such as a DC electric field force, a conventional dielectric electrophoretic force, and a traveling wave dielectric electrophoresis). Force), magnetic field force, sound field force, light field force. At least two physical forces. In a specific embodiment, the internal structure of the device may apply an electric field force (such as a DC electric field force) to the entity molecules to be operated. , Conventional dielectrophoretic force and traveling wave dielectrophoretic force), magnetic field force, sound field force and mechanical force of at least two physical forces. In a specific embodiment, the internal structure of the device can be applied to the entity molecules to be operated with electric field force (such as DC electric field force, conventional dielectric electrophoretic force and traveling wave dielectric electrophoretic force), magnetic field force, and light field force. And mechanical forces of at least two physical forces. In a specific embodiment, the internal structure of the device can be applied to the entity molecules to be operated with electric field force (such as DC electric field force, conventional dielectrophoretic force and traveling wave dielectrophoretic force), sound field force, and light field. At least two physical forces of force and mechanical force. In a specific embodiment, the internal structure of the device may apply at least two physical forces of a magnetic field force, a sound field force, a light field force, and a mechanical force to the entity molecule to be operated. In another specific embodiment, the internal structure of the device can apply at least two physical forces to the entity molecules to be manipulated, excluding the combination of light field forces and dielectric electrophoretic forces. In another specific embodiment, the internal structure of the device can be applied to the entity molecules to be operated to exclude binding by _-58- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm)
綠 593683Green 593683
駐波聲场產生的聲場力和由均勻電場產生的直流電場力组 合在内的至少兩種物理力。在另_個特定的具體實施例 中,裝置的内部結構可以施加給待操作的實體分子以不包 括電場力和機械力組合在内的至少兩種物理力。 、另方面,本發明涉及一種操作實體分子的方法,這個 方法包括:a)將待操作的實體分子引人晶片,晶片由一塊 基底和位在基底上的至少兩種不同類型的内建結構構成, 其中每個這樣的結構中都能與外部信號源連接,以產生某 種類型的物理場;# b)將上述晶片的内建結構與外部的信 號源連接&而在上述的實體分子上施加纟少兩種類型的 物理力,使得上述實體分子被物理力操作。 / 可操作的細胞包括,但不僅僅限於,動物細胞、植物細 胞、真菌細胞、細菌細胞、重組細胞或是培養的細胞。待 操作的動物細胞、植物細胞、真菌細胞和細菌細胞分別來 源於動物界、植物界、真菌界和細菌界的某一種屬或是亞 種屬、。屬於纖毛類、枯菌類、鞭毛類、微孢子類的細胞也 可以被操作。源於鳥類如雞,脊椎動物例如魚和哺乳動物 例如大鼠、丨R、兔子、猫、狗、豬、奶牛、公牛、绵 羊山羊馬猴和其他類人猿及人類的細胞都可以用本 晶片、裝置和方法操作。 對於動物細胞,源於特定的組織或器官的細胞能夠被操 作。例如,例如結缔組織、上皮组織、肌肉組織或神經组 織的細胞。、類似地,各種器官中的細胞也可被操作,如眼 部附屬器官,環形螺旋器官(anniU〇Spiral 〇rgan),耳部器At least two physical forces including a sound field force generated by a standing wave sound field and a DC electric field force generated by a uniform electric field. In another specific embodiment, the internal structure of the device may be applied to the physical molecules to be operated without at least two physical forces including a combination of electric and mechanical forces. In another aspect, the present invention relates to a method for operating a solid molecule. The method includes: a) introducing a solid molecule to be operated into a wafer. The wafer is composed of a substrate and at least two different types of built-in structures on the substrate. Each of these structures can be connected to an external signal source to generate a certain type of physics; # b) connect the built-in structure of the chip to an external signal source & Applying at least two types of physical forces causes the aforementioned physical molecules to be manipulated by physical forces. / Operable cells include, but are not limited to, animal cells, plant cells, fungal cells, bacterial cells, recombinant cells, or cultured cells. The animal cells, plant cells, fungal cells, and bacterial cells to be operated on originate from one genus or subspecies of the animal kingdom, plant kingdom, fungal kingdom, and bacterial kingdom, respectively. Cells belonging to ciliates, bacillus, flagella, and microspores can also be manipulated. Cells derived from birds such as chickens, vertebrates such as fish and mammals such as rats, rabbits, cats, dogs, pigs, cows, bulls, sheep, goats, monkeys and other apes and humans can be used with this chip and device And method operations. For animal cells, cells derived from a particular tissue or organ can be manipulated. For example, cells such as connective tissue, epithelial tissue, muscle tissue, or neural tissue. Similarly, cells in various organs can also be manipulated, such as ocular accessory organs, annular spiral organs (anniU〇Spiral 〇rgan), ear organs
裝 訂Binding
593683 A7 B7 五、發明説明(57 ) 官,契維茨器,室周器官,柯替氏,關鍵器官,釉質,末 梢器官,雌性外生殖器官,雄性外生殖器官,floating organ,flower-spray organ of Ruffini,生殖器官,高爾基氏腱 器,味覺器官,聽覺器官,雌性内生殖器官,雄性内生殖 器官,插入器官,雅各布遜氏器,神經血器官,神經腱 梭,嗅覺器官,耳石器,ptotic organ,羅森苗勒器,感覺 器官,嗅覺器官,螺旋器,連合下器,穹窿下器官, supernumerary organ,觸覺器,乾器官,味覺器官,觸覺器 官,泌尿器官,vascular organ of lamina terminalis,前庭器 官,前庭媧器,退化器官,視覺器官,梨鼻器,遊走器, 韋伯器官和主動脈旁體。來自動物内部器官如腦,肺, 肝,脾,骨髓,胸腺,心臟,淋巴,血液,骨,軟骨,胰 腺,腎,膽囊,胃,腸,睾丸,卵_巢,子宮,直腸,神經 系統,腺體,體内血管等等的細胞更易於操作。進一步 說,來自任何植物、真菌(如酵母菌)、細菌(如真細菌或古 細菌)都可以被操作。來自任何真核或原核生物的重組細 胞,如動物、植物、真菌或細菌的都可以被操作。來自於 身體各部位的體液,如血液、尿液、唾液、骨髓、精液或 其他腹水的細胞,以及它們的組分如血清和血聚亦可被操 作。 可操作的細胞器包括細胞核、線粒體、葉綠體、核糖 體、内質網、高爾基體、溶酶體、蛋白酶體、囊泡、液泡 或微體。可操作的病毒(無論是完整的病毒還是任何病毒 結構)在其生存周期中可以來自諸如第一類病毒、第二類 _-60-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 593683 A7 B7 五、發明説明( 病毒、第三類病毒、第四類病毒、第五類病毒或第六類病 毒0 可操作的細胞内實驩分子是指位於胞内的實體分子,即 位於細胞質或細胞器基底中,附著在任何細胞内膜上,位 於質膜(如果存在)上,或是位於細胞表面,即附著在細胞 質膜或細胞壁(如果存在)的外表面上。任何所需的細胞内 實體分子都可以從目標細胞中分離出來。例如,細胞器、 分子或是它們的聚集體可以被分離出來。這樣的細胞器的 例子包括’但不僅僅限於’細胞核、線粒體、葉綠體、核 糖體、内質網、高爾基體、溶酶體、蛋白酶體、囊泡、液 泡或微體、膜受體、細胞質中的抗原、酶和蛋白質。 可操作的分子可以是無機分子如離子,有機分子或它們 的複合體。可操作的離子的例子包括,但不僅僅限於,納 離子、鉀離子、鎂離子、鈣離子、氯離子、鐵離子、銅離 子、鋅離子、錳離子、釩離子、鎳離子、鉻離子、氟離 子、矽離子、錫離子、硼離子或砷離子。可操作的有機分 子的例子包括,但不僅僅限於,氨基酸、肽、蛋白質、核 芸、核菩酸、寡核甞酸、核酸、維生素、單糖、寡糖、碳 水化合物、脂類或它們的複合體。 本方法可以操作任何氨基酸,如D —和L-氨基酸。此 外,天然存在的肽和蛋白質的所有構建成分,包括丙氨酸 (A),精氨酸(R),天冬酰胺(N),天冬氨酸⑺),半胱氨 酸(C),穀氨酰胺(Q),谷氨酸(E),甘氨酸(G),組氨= (H),異党氨酸(I),亮氨酸,賴氨酸,蛋氨酸 本纸張尺度適财S g家標準(CNS) A4規格(21()x297公爱)593683 A7 B7 V. Description of the invention (57) Officer, Chevitz organ, periventricular organ, Corti, key organ, enamel, peripheral organ, female external reproductive organ, male external reproductive organ, floating organ, flower-spray organ of Ruffini, reproductive organ, Golgi's tendon, taste organ, auditory organ, female internal reproductive organ, male internal reproductive organ, insertion organ, Jacobson's organ, nerve blood organ, tendon spindle, olfactory organ, otolith , Ptotic organ, Rosenmuller, sensory organ, olfactory organ, spiral organ, lower commissure, subfornix organ, supernumerary organ, touch organ, stem organ, taste organ, tactile organ, urinary organ, vascular organ of lamina terminalis , Vestibular organs, vestibular organs, degenerate organs, visual organs, pear nose organs, migratory organs, Weber organs and para-aortic bodies. From animal internal organs such as brain, lung, liver, spleen, bone marrow, thymus, heart, lymph, blood, bone, cartilage, pancreas, kidney, gallbladder, stomach, intestine, testis, egg nest, uterus, rectum, nervous system, The cells of the glands, blood vessels in the body, etc. are easier to handle. Furthermore, any plant, fungus (such as yeast), or bacteria (such as Eubacteria or Archaea) can be manipulated. Recombinant cells from any eukaryotic or prokaryotic organism, such as animals, plants, fungi or bacteria, can be manipulated. Body fluids from various parts of the body, such as blood, urine, saliva, bone marrow, semen or other ascites cells, and their components such as serum and blood aggregates can also be manipulated. Operable organelles include nuclei, mitochondria, chloroplasts, ribosomes, endoplasmic reticulum, Golgi apparatus, lysosomes, proteasomes, vesicles, vacuoles or microsomes. Operable virus (whether it is a complete virus or any virus structure) can come from, for example, the first type virus, the second type in its life cycle _-60-_ This paper standard applies to China National Standard (CNS) A4 specification (210X 297 mm) 593683 A7 B7 V. Description of the invention (Virus, third virus, fourth virus, fifth virus or sixth virus 0 Manipulable intracellular molecules refer to solid molecules located in the cell , That is, located in the cytoplasm or organelle base, attached to any cell inner membrane, on the plasma membrane (if present), or on the cell surface, that is, attached to the outer surface of the cell plasma membrane or cell wall (if present). Any The required intracellular solid molecules can be separated from the target cell. For example, organelles, molecules or their aggregates can be separated. Examples of such organelles include 'but not limited to' the nucleus, mitochondria, Chloroplasts, ribosomes, endoplasmic reticulum, Golgi apparatus, lysosomes, proteasomes, vesicles, vacuoles or microsomes, membrane receptors, antigens in the cytoplasm, enzymes And proteins. Operable molecules can be inorganic molecules such as ions, organic molecules or their complexes. Examples of operable ions include, but are not limited to, nano ions, potassium ions, magnesium ions, calcium ions, chloride ions, Iron ions, copper ions, zinc ions, manganese ions, vanadium ions, nickel ions, chromium ions, fluoride ions, silicon ions, tin ions, boron ions, or arsenic ions. Examples of operable organic molecules include, but are not limited to, Amino acids, peptides, proteins, nuclear acids, nuclear acids, oligonucleotides, nucleic acids, vitamins, monosaccharides, oligosaccharides, carbohydrates, lipids or their complexes. This method can handle any amino acid, such as D—and L-amino acid. In addition, all the building blocks of naturally occurring peptides and proteins, including alanine (A), arginine (R), asparagine (N), aspartic acid ⑺), cysteine (C), glutamine (Q), glutamic acid (E), glycine (G), histamine = (H), isolysine (I), leucine, lysine, methionine Standard Applicable Standards (CNS) A4 Specifications (21 () x297 Public Love)
裝 玎Pretend
樂 -61 - 593683 A7 B7 五、發明説明(59 ) (Μ),苯丙氨酸(F),脯氨酸(P),絲氨酸(S),蘇氨酸 (Τ),色氨酸(W),酪氨酸(Υ)和纈氨酸(V)都可以被操 作。 本方法可以操作任何蛋白質和肽。例如’細胞膜上的膜 蛋白(如受體蛋白)、酶、輸運蛋白(如離子通道和離子 泵)、營養或貯藏蛋白、收縮或運動蛋白(如肌動蛋白和肌 球蛋白)、結構蛋白、防禦蛋白或調節蛋白(如抗體、激素 和生長素)。蛋白質的或肽的抗原亦可被操作。 本方法可以操作任何核酸,包括單鏈、雙鏈和三鏈核 酸。這樣的核酸的例子包括DNA(如A-、Β-、Ζ -型 DNA)和 RNA(如 mRNA、tRNA 和 rRNA)。 本方法可以操作任何核贫。這樣的核芬的例子包括腺嗓 呤核芬、鳥嗓呤核嘗、胞喊峻核嘗.、胸腺17密咬核芬、尿喊 啶核甞。本方法亦可操作任何核 酸,這樣的核 酸的例 子包括 AMP,GMP,CMP,UMP,ADP,GDP,CDP,UDP, ATP,GTP,CTP,UTP,dAMP,dGMP,dCMP,dTMP, dADP,dGDP,dCDP,dTDP,dATP,dGTP,dCTP 和 dTTP 〇 本方法可以操作任何維生素。例如,水溶性維生素如維 生素Β!、維生素B2、煙鹼酸、維生素B3、維生素B6、 維生素Η、葉酸、維生素B12和維生素C可以被操作。類 似地,脂溶性維生素如維生素A、維生素D、維生素E和 維生素K亦可被操作。 本方法可以操作任何單糖(不管是D-還是L 一單糖,也 不管疋龄:糖還是g同糖)。單糖的例子包括三糖(如甘油酸)、 -62 - _. 本紙張尺度適用中國國家標準(CNS) A4規格(21〇X297公釐) 裝 玎Le-61-593683 A7 B7 V. Description of the Invention (59) (M), Phenylalanine (F), Proline (P), Serine (S), Threonine (T), Tryptophan (W ), Tyrosine (Υ) and valine (V) can be manipulated. This method can work with any protein and peptide. For example, membrane proteins (such as receptor proteins) on cell membranes, enzymes, transport proteins (such as ion channels and ion pumps), nutrition or storage proteins, contraction or movement proteins (such as actin and myosin), structural proteins Defense proteins or regulatory proteins (such as antibodies, hormones, and auxins). Protein or peptide antigens can also be manipulated. This method can handle any nucleic acid, including single-, double-, and triple-stranded nucleic acids. Examples of such nucleic acids include DNA (such as A-, B-, Z-type DNA) and RNA (such as mRNA, tRNA, and rRNA). This method can operate on any nuclear poverty. Examples of such nuclear fens include adenine nucleus, guanosine nucleus, cytosine nucleus, thymus 17 dense bite nucleus, and urine urinary nucleus. This method can also handle any nucleic acid. Examples of such nucleic acids include AMP, GMP, CMP, UMP, ADP, GDP, CDP, UDP, ATP, GTP, CTP, UTP, dAMP, dGMP, dCMP, dTMP, dADP, dGDP, dCDP, dTDP, dATP, dGTP, dCTP and dTTP. This method can handle any vitamin. For example, water-soluble vitamins such as vitamin B !, vitamin B2, nicotinic acid, vitamin B3, vitamin B6, vitamin IX, folic acid, vitamin B12, and vitamin C can be manipulated. Similarly, fat-soluble vitamins such as vitamin A, vitamin D, vitamin E, and vitamin K can also be manipulated. This method can handle any monosaccharide (whether it is D- or L-monosaccharide, and regardless of age: sugar or g with sugar). Examples of monosaccharides include trisaccharides (such as glyceric acid), -62-_. This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm).
線* 593683 A7 B7 五、發明説明( 60 四糖(如赤蘚糖和蘇糖)、戊糖(如核糖,阿糖,木糖,來蘇 糖和核嗣糖)、己糖(如阿洛糖、阿卓糖、葡萄糖、甘露 糖、古洛糖、艾杜糖、半乳糖、塔羅糖和果糖)以及庚糖 (如景天庚酮糖)。 本方法可以操作任何脂類。脂類的例子包括三酰基甘油 (如硬脂酸甘油酯、軟脂酸甘油酯和油酸甘油酯)、石蠟、 憐酸甘油醋(如磷脂酰乙醇胺、卵磷脂、磷脂酰絲氨酸、 磷脂酰肌醇和雙磷脂酰甘油)、鞘酯類(如鞘磷脂、腦甞脂 和神經節苷脂)、固醇(如膽固醇和豆留醇)以及固醇脂肪酸 酉旨。脂防酸可以是飽和脂肪酸(如十二烷酸、肉豆蔻酸、 棕櫚酸、硬脂酸、花生酸和二十四烷酸),還可以是非飽 和脂肪酸(如棕櫚油酸、油酸、亞油酸、亞麻酸和花生四 婦酸)。 對於不可以直接使用物理力操作的實體分子,如果自身 可以直接用合適的物理力操作的結合物可以與實體分子結 合’這樣類型的實體分子的操作可以透過操作結合物-實 體分子複合體來實現。任何能以一定親和力和特異性與實 體分子結合而且能被適當的物理作用力操作的結合體都可 以在本方法中使用。結合物可以是細胞如動物、植物、真 菌或細菌細胞;細胞器如細胞核、線粒體' 葉綠體、核糖 體、内質網、高爾基體、溶酶體、蛋白酶體、囊泡、液泡 或微體;病毒、微粒或者它們的聚合物或複合體。在c部 分描述的細胞、細胞器和病毒亦可被用作結合體。 本方法中使用的微粒的尺寸在大約0 01微米至10釐米 本纸張尺度中國國家標準(CNS) A4規格(210 X 297公爱) 63-Line * 593683 A7 B7 V. Description of the invention (60 Tetrasaccharides (such as erythrose and threose), pentoses (such as ribose, arabinose, xylose, lyxose and ribose), hexoses (such as Allo Sugar, altose, glucose, mannose, gulose, idose, galactose, talose, and fructose) and heptose (such as sedoheptulose). This method can handle any lipid. Lipids Examples include triacylglycerols (such as glyceryl stearate, glyceryl palmitate, and glyceryl oleate), paraffin, and glycerol vinegar (such as phosphatidylethanolamine, lecithin, phosphatidylserine, phosphatidylinositol, and Phosphatidyl glycerol), sphingosides (such as sphingomyelin, cerebrolipids, and gangliosides), sterols (such as cholesterol and stigmasterol), and sterol fatty acids. Fatty acids can be saturated fatty acids (such as ten Dialkanoic acid, myristic acid, palmitic acid, stearic acid, arachidic acid, and arachidonic acid, and also unsaturated fatty acids (such as palmitoleic acid, oleic acid, linoleic acid, linolenic acid, and arachidonic acid) ). For solid molecules that cannot be manipulated directly using physical forces, if A conjugate that can be directly manipulated by a suitable physical force can bind to a solid molecule. The operation of such a type of solid molecule can be achieved by operating a conjugate-solid molecular complex. Any can bind to a solid molecule with a certain affinity and specificity And conjugates that can be manipulated by appropriate physical forces can be used in this method. The conjugates can be cells such as animals, plants, fungi or bacterial cells; organelles such as nuclei, mitochondria 'chloroplasts, ribosomes, endoplasmic reticulum , Golgi, lysosomes, proteasomes, vesicles, vacuoles or microsomes; viruses, microparticles or their polymers or complexes. Cells, organelles and viruses described in section c can also be used as conjugates. The size of the microparticles used in this method is about 0.01 micrometers to 10 centimeters. Paper size Chinese National Standard (CNS) A4 size (210 X 297 public love) 63-
593683 A7 B7 五、發明説明( ) 61 之間。最好’本方法中使用的微粒尺寸在大約0.0 i微米 至至幾千個微米之間。使用的微粒可以是,但不僅僅限 於,塑膠微粒、聚苯乙晞微粒、玻璃珠體、磁珠、中空玻 璃球、金屬微粒或具有複雜的成分或各種微加工出來的結 微細構的微粒等等。 被操作的實體分子可以用任何已知的方法與結合物的表 面結合。例如,實體分子可以直接或透過一個連接臂(最 好是一個可切割的連接臂)與結合物的表面結合。實體分 子也可以透過一個共價鍵或非共價鍵與結合物的表面結 合。另外,實體分子也可以透過特異性或非特異性結合與 結合物的表面結合。最好,實體分子與結合物之間的連接 臂是可切割的連接臂,例如可以用化學、物理或酶處理的 方法切割連接臂。同樣,可以使用在名為“METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS” (by Wang et al·,filed on August 10, 2000)的美國專利中的關於 耦聯及解耦聯實體分子與結合物的方法。最好被操作的實 體分子基本上結合在結合物的表面。更好的是,被操作的 實體分子完全結合在結合物的表面。 最好,透過使用美國專利名為 “METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS” (by Wang et al·,filed on August 10, 2000)的美國專利中的結合 物操作實體分子的方法可以用於不能直接使用物理力操作 的實體分子的操作。 上面所述的方法還可以用在非晶片載體上操作實體分 ______-64-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂593683 A7 B7 V. Description of the invention () 61. Preferably, the particle size used in this method is between about 0.0 micrometers and several thousand micrometers. The particles used may be, but are not limited to, plastic particles, polystyrene particles, glass beads, magnetic beads, hollow glass spheres, metal particles, or particles with complex components or microstructures produced by various micromachining. Wait. The manipulated entity molecule can be bound to the surface of the conjugate by any known method. For example, a solid molecule can bind to the surface of a conjugate directly or through a linker arm (preferably a cleavable linker arm). Solid molecules can also be bound to the surface of the conjugate through a covalent or non-covalent bond. Alternatively, a solid molecule can be bound to the surface of the conjugate through specific or non-specific binding. Preferably, the linker between the solid molecule and the conjugate is a cleavable linker. For example, the linker can be cut by chemical, physical or enzymatic treatment. Similarly, a method for coupling and decoupling solid molecules and conjugates in a US patent entitled "METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS" (by Wang et al., Filed on August 10, 2000) can be used. The entity molecules that are best manipulated are essentially bound to the surface of the conjugate. Even better, the manipulated entity molecules are completely bound to the surface of the conjugate. Preferably, a method of manipulating a physical molecule by using a conjugate in a U.S. patent named "METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS" (by Wang et al., Filed on August 10, 2000) can be used without direct use The manipulation of physical molecules by physical forces. The method described above can also be used to operate the physical separation on non-wafer carriers. ______- 64-_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding
線, 593683 A7 B7 五、發明説明(π ) 62 子,也可以採用同樣的方法但不使用上述的裝置來達到操 作實體分子的目的。相應的在另一方面,本發明引導出用 於操作實體分子的方法,該方法包括對實體分子施加至少 兩種類型的杨理力,從而所述的實體分子被所述的物理力 操作。物理力可以是磁場力、介電電泳力、聲場力、光場 力和機械力。例如,結合磁場力和介電電泳力可以用於操 作實體分子。在另一個例子中,結合磁場力和聲場力來操 作實體分子。 被操作的實體分子可以是液態或氣態的,也可以是處於 液態或氣態介質中,或是二者的結合。最好實體分子是在 液態介質中被操作。液態介質可以是懸浮液、溶液或是二 者的結合。液態介質可以放置於任意的液體容器,並且對 實體分子的操作也可以在這些容器冲實現。液體容器包括 流體池、燒瓶、燒杯、錐形瓶、管(如試管、Eppendorf 管、離心管、收集管等)、培養皿或、多孔板(如96孔 板、384孔板、480孔板、960孔板等)。用於產生作用 於實體分子上的物理力的結構可以是與液體容器分離開 的,也可以是連接或附著在液體容器上。 用於產生磁場力的結構可以採用電磁線圈結構,透過施 加電流就可以產生磁場。電磁線圈可以與液體容器分離 開。在操作中,電磁線圈可以放置在液體容器的附近區 域,這樣透過激發電磁線圈所產生的磁場能耦合到液體容 器中並操作處於液體容器中的磁微粒。當然,電磁線圈也 可以於液體容器相互連接在一起。另外用於產生磁場的方 _-65 -__ 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 593683 A7 B7 五、發明説明(„ ) 63 法還包括使用永磁鐵。這力永磁鐵也是可以連接在液體容 器上或是與液體容器分離開。還可以採用其他能在液體容 器中產生足夠磁.場的方法。 用於產生介電電泳力的結構包括電導線和/或其他電導 體。這些電導線或導體相互之間具有特定的幾何關係。導 線和/或其他導體可以獨立於液體容器。在操作中,這些 導線和/或其他導體被放置在液體容器的附近區域,這樣 激發電導線和/或其他導體所產生的交流電場就可以耦合 到液體容器中並操作處於液體容器中的實體分子。當然, 電導線和/或其他導體也可以與液體容器相聯接。還可以 採用其他能在液體容器中產生足夠電場的方法。 用於產生聲場的結構包括確定的聲波或超聲波源。這類 聲波和超聲波源可以含有壓電元件,這類壓電元件在電場 的激發下可以產生聲波和超聲波。聲源可以獨立於液體容 器。在操作中,聲波或超聲波源可以放置在液體容器的附 近區域,這樣由聲源產生(也可能是激發產生)的聲波或超 聲波能耦合到液體容器中並操作處於液體容器中的磁微 粒。當然,聲波或超聲波源也可以於液體容器相互連接在 —起。 用於產生光場的結構包括確定的光源和光聚焦裝置/裝 置。這類光聚焦裝置/裝置可以含有光學鏡頭、濾光片及 其他光學元裝置,當液體容器被放置在與這類光聚焦裝置 /裝置相關的特殊結構中,光聚焦裝置/裝置可以在液體容 器中產生光場並操作處於液體容器中的磁微粒。 _- 66 -___ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂Line, 593683 A7 B7 V. Description of the invention (π) 62 The same method can be used without using the above device to achieve the purpose of operating solid molecules. Accordingly, in another aspect, the present invention leads to a method for operating a physical molecule, the method comprising applying at least two types of Yangli force to the physical molecule, so that the physical molecule is operated by the physical force. The physical force can be a magnetic field force, a dielectrophoretic force, a sound field force, a light field force, and a mechanical force. For example, a combination of magnetic and dielectrophoretic forces can be used to manipulate solid molecules. In another example, a magnetic force and a sound field force are combined to operate a solid molecule. The manipulated entity molecule can be liquid or gaseous, or it can be in a liquid or gaseous medium, or a combination of the two. Preferably, the solid molecules are manipulated in a liquid medium. The liquid medium can be a suspension, a solution, or a combination of the two. Liquid media can be placed in any liquid container, and manipulation of solid molecules can also be achieved in these containers. Liquid containers include fluid cells, flasks, beakers, Erlenmeyer flasks, tubes (such as test tubes, Eppendorf tubes, centrifuge tubes, collection tubes, etc.), petri dishes, or multi-well plates (such as 96-well plates, 384-well plates, 480-well plates, 960 well plate, etc.). The structure for generating a physical force acting on a solid molecule may be separated from the liquid container, or may be connected or attached to the liquid container. The structure for generating a magnetic field force can be an electromagnetic coil structure, and a magnetic field can be generated by applying a current. The solenoid can be separated from the liquid container. In operation, the electromagnetic coil can be placed in the vicinity of the liquid container so that the magnetic field generated by exciting the electromagnetic coil can be coupled to the liquid container and manipulate the magnetic particles in the liquid container. Of course, the electromagnetic coil can also be connected to each other in the liquid container. In addition, the method used to generate the magnetic field _-65 -__ This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 593683 A7 B7 V. Description of the invention („) The 63 method also includes the use of permanent magnets. This force permanent magnet can also be connected to the liquid container or separated from the liquid container. Other methods that can generate a sufficient magnetic field in the liquid container can also be used. The structure used to generate the dielectric electrophoretic force includes electrical wires and / Or other electrical conductors. These electrical wires or conductors have a specific geometric relationship with each other. The wires and / or other conductors may be independent of the liquid container. In operation, these wires and / or other conductors are placed in the vicinity of the liquid container In this way, the AC electric field generated by exciting the electric wires and / or other conductors can be coupled to the liquid container and manipulate the solid molecules in the liquid container. Of course, the electric wires and / or other conductors can also be connected to the liquid container. Other methods can be used to generate a sufficient electric field in the liquid container. The structure used to generate the sound field includes a defined source of sound waves or ultrasound. This Acoustic and ultrasonic sources can contain piezoelectric elements. Such piezoelectric elements can generate acoustic and ultrasonic waves when excited by an electric field. The acoustic source can be independent of the liquid container. In operation, the acoustic or ultrasonic source can be placed in the vicinity of the liquid container In this way, the sound waves or ultrasonic waves generated by the sound source (or excitation) can be coupled to the liquid container and manipulate the magnetic particles in the liquid container. Of course, the sound wave or ultrasonic source can also be connected to each other in the liquid container. The structure for generating a light field includes a defined light source and a light focusing device / apparatus. This type of light focusing device / apparatus may contain optical lenses, filters, and other optical elements. When a liquid container is placed in conjunction with this type of light focusing device In the special structure related to the device, the light focusing device / device can generate a light field in the liquid container and operate the magnetic particles in the liquid container. _- 66 -___ This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Staple
593683 A7 B7 五、發明説明( ) 64 用於產生機械力的裝置包括流體泵和閥門。這些泵和閥 門可以在液體容器中導致液體流動,由液體流動產生的機 械力可以作用於液體容器中的實體分子並對其進行操作。 在一個具體實施例中,用於操作實體分子的方法採用了 至少兩種不同類型的物理力,這些力順序地作用在實體分 子上。在另一個實體分子中,用於操作實體分子的方法採 用了至少兩種不同類型的物理力,.這些力同時作用在實體 分子上。 在一個確定的具體實施例中,透過使用上述的操作方法 同時操作多個實體分子。例如,透過使用多於一種類型的 物理力對多個實體分子進行同時操作,這樣至少有兩種不 同的實體分子被不同類型的物理力操作。在其他一些具體 實施例中,多個實體分子是被順序操作的。例如,透過使 用多於一種類型的物理力對多個實體分子進行順序操作, 這樣至少有兩種不同的實體分子被不同類型的物理力操 作。 在其他具體實施例中,被操作的實體分子處於混合物中 並且透過使用上述的方法對實體分子進行選擇性操作。在 另一個具體實施例中,被操作的實體分子構成混合物並以 混合物的形式被操作。 此處所述的操作方法可以用於操作任意類型的實體分子 如細胞、細胞器、病毒、分子或是它們的聚合體或複合 體。細胞可以是動物細胞、植物細胞、真菌細胞、細菌細 胞、重組細胞和培養的細胞。細胞器可以是細胞核、線粒 _-67-___ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)593683 A7 B7 V. Description of the invention () 64 The device for generating mechanical force includes a fluid pump and a valve. These pumps and valves can cause liquid flow in the liquid container, and the mechanical force generated by the liquid flow can act on and operate the solid molecules in the liquid container. In a specific embodiment, the method for manipulating a physical molecule employs at least two different types of physical forces that act sequentially on the physical molecule. In another entity molecule, the method used to manipulate the entity molecule uses at least two different types of physical forces. These forces act on the entity molecule simultaneously. In a specific embodiment, a plurality of entity molecules are simultaneously operated by using the operation method described above. For example, by using more than one type of physical force to operate multiple physical molecules simultaneously, at least two different physical molecules are operated by different types of physical forces. In other specific embodiments, multiple entity molecules are operated sequentially. For example, by using more than one type of physical force to sequentially operate multiple physical molecules, at least two different physical molecules are operated by different types of physical forces. In other specific embodiments, the manipulated entity molecules are in a mixture and the entity molecules are selectively manipulated by using the methods described above. In another specific embodiment, the manipulated entity molecules constitute a mixture and are operated as a mixture. The procedures described herein can be used to manipulate any type of solid molecule such as a cell, organelle, virus, molecule, or their aggregates or complexes. Cells can be animal cells, plant cells, fungal cells, bacterial cells, recombinant cells and cultured cells. Organelles can be nucleus and mitochondria _-67 -___ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
體、葉綠體、核择 酶體、囊ml 高爾基體、溶酶體、蛋白 ::囊包心和微體。分子可以是無機分 子及其它們的複合體。盔撼 $钱刀 ^ 4私工 "拱機分子是一種離子,可以是衲離 子 子 子 子、鉀離子、鎂離子、鈣離子约離 鼠離子、鐵離子、銅龜 鋅離子、錳離子、钍齙早 &、 j離 ^,、 鈷離子、碘離子、鉬離子、叙_ 、離子二鉻離子、氟離子、矽離子、錫離子、硼離 石離子寺。有機分子可以是氨基酸、肽、蛋白質、桂 =酸、寡核嘗酸、核酸、維生素、單糖、寡糖1 水化合物、脂等。 人 此處所述的操作方法可以對實體分子進行輸運、聚隹、 富集、濃縮、聚集、捕獲、推斥、懸浮、分離'分餘、分 邵或是使實體分子作直線或是其他形式的運動。 D ·物理場和力 典型的物理場和物理力,以及產生這些場的典型結構將 在下面的小節中描述。 (I)聲場力 聲場力指透過一個聲波場施加在實體分子例如微粒和/ 或分子上產生的力。它也可以指聲場輻射力。聲場力可以 用於操作例如捕獲、移動、引導 '處理在液體中的微粒。 在超聲駐波中用於微粒操作的聲場力可以用於富集紅血球 (Yasuda et al,J. “。义所,102(1).^4, 645 ( 1 997)),富集微米級的聚苯乙烯珠體(〇·3微米至 10 微米,Yasuda and Kamakura,乂即/· ρ/ζγ· 11X111:1 77 1 - 1 773 ( 1 997)),富集 DNA 分子(Yasuda 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 66 五、發明説明( et a 15 J. Acoust. S o c · Am,, 9 9 f 2 ) : 1 7 4 R - ι 9 ^ ι ( 1 996)),和沈降細胞(pui et al, II; 146-152 (1995))。透過競爭靜電和聲場輻射力,不 同大小和電荷的聚苯乙烯珠體的分離已經有過報道 (Yasuda et al? J. Acoust. Soc. Am., £^Χ_ϋ·1 9 6 5_ 1 970 ( 1 996); and Yasuda et al., jpn^ j Appl 裝 P hy s.,3_5 (1):3295-3299 (1996))。進一步,在聲場力 用於操作哺乳動物細胞如以離子泄漏為特徵(對於紅血球 Yasuda et al? J. Acoust. Soc. Am.^ 102(1): 6 4 2-645 ( 1 99 7)) ’或抗原時表現出很少或沒有損傷及損害效應(對 雜交瘤細胞,Pui et al, 1 52 ( 1 99 5 )卜 訂 一個聲波可以透過一個聲波感測器例如壓電陶瓷如pZT 材料產生。使用壓電材料製造的壓電陶瓷感測器在施加機 械力(壓電或能量效應)的作用下產生形狀改變時將產生一 個電磁場。相反的,當一個施加的電場將在材料上產生一 個機械應力(電致伸縮或電機效應)。他們將能量從機械能 轉化成電能,反之亦然。當交流電壓施加在壓電感測器上 時’感測器上產生振動並且振動將傳入包含壓電感測器的 腔體中的液體。 對於一個多力操作晶片(多力操作晶片)包含一個聲波感 測器,可以構造一個腔體使得晶片形成腔體的主要表面。 當合適頻率的交流信號施加在聲場感測器的電極上,交變 的機械應力在壓電材料的中產生並且傳遞到腔體中的液體 593683 A7Body, chloroplast, ribozyme, vesicle ml Golgi, lysosome, protein :: capsule and microsome. Molecules can be inorganic molecules and their complexes. Helmet shock $ 钱 刀 4 Private worker " The archetype molecule is an ion, which can be a proton ion, a potassium ion, a magnesium ion, a calcium ion, a mouse ion, an iron ion, a copper turtle zinc ion, a manganese ion, Isahaya &, j ion ,, cobalt ion, iodine ion, molybdenum ion, syllium, ion dichromium ion, fluoride ion, silicon ion, tin ion, boron ionite temple. Organic molecules can be amino acids, peptides, proteins, lauric acid, oligonucleotides, nucleic acids, vitamins, monosaccharides, oligosaccharides, lipids, and the like. The operation method described here can transport, aggregate, enrich, concentrate, concentrate, capture, repel, suspend, separate, 'separate, divide, or make solid molecules linear or other Forms of movement. D. Physics and Forces Typical physics and forces, and the typical structure that produces these fields, are described in the following subsections. (I) Acoustic field force Acoustic field force refers to the force generated on a solid molecule such as a particle and / or a molecule through a sound wave field. It can also refer to the sound field radiation force. Sound field forces can be used to manipulate, for example, capture, move, and guide 'process particles in a liquid. The sound field force used for particle manipulation in ultrasonic standing waves can be used to enrich red blood cells (Yasuda et al, J. ". Yoshiho, 102 (1). ^ 4, 645 (1 997)), enriched at the micron level Polystyrene beads (0.3 μm to 10 μm, Yasuda and Kamakura, ie / · ρ / ζγ · 11X111: 1 77 1-1 773 (1 997)), enriched with DNA molecules (Yasuda paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 593683 A7 B7 66 V. Description of the invention (et a 15 J. Acoust. S oc · Am ,, 9 9 f 2): 1 7 4 R-ι 9 ^ (1 996)), and Shen Jiang cells (pui et al, II; 146-152 (1995)). Through the competition of static electricity and sound field radiation force, the separation of polystyrene beads of different sizes and charges has been Reported (Yasuda et al? J. Acoust. Soc. Am., £ ^ Χ_ 9 · 1 9 6 5_ 1 970 (1 996); and Yasuda et al., Jpn ^ j Appl installed P hy s., 3_5 (1 ): 3295-3299 (1996)). Further, the sound field force is used to manipulate mammalian cells as characterized by ion leakage (for red blood cells Yasuda et al? J. Acoust. Soc. Am. ^ 102 (1): 6 4 2-645 (1 99 7)) 'or antigen Little or no damage and damaging effects (for hybridoma cells, Pui et al, 1 52 (1 99 5)) A sound wave can be generated by a sound wave sensor such as piezoelectric ceramics such as pZT materials. Manufactured using piezoelectric materials Piezoelectric ceramic sensors generate an electromagnetic field when they change shape under the application of a mechanical force (piezoelectric or energy effect). Conversely, when an applied electric field creates a mechanical stress (electrostrictive or Motor effect). They convert energy from mechanical energy to electrical energy and vice versa. When an AC voltage is applied to the piezo sensor, vibrations are generated on the sensor and the vibrations are passed into the cavity containing the piezo sensor. Liquid in the body. For a multi-force operation wafer (multi-force operation wafer) contains an acoustic wave sensor, a cavity can be constructed so that the wafer forms the main surface of the cavity. When an AC signal of an appropriate frequency is applied to the sound field sensing On the electrode of the transformer, the alternating mechanical stress is generated in the piezoelectric material and transferred to the liquid in the cavity 593683 A7
溶液中。考慮腔體構造的位置使得在聲波傳播和反射的方 向(例如Z-軸)上產生駐波,在液體中,駐波在z軸沿空間 的變化可以用下式表示:In solution. Considering the position of the cavity structure, a standing wave is generated in the direction of sound wave propagation and reflection (such as the Z-axis). In a liquid, the change of the standing wave in space along the z axis can be expressed by the following formula:
Ap(z) = p0 sin(kz) c〇s(cot) 其中Δρ是在位置z的聲壓,A是聲壓幅度,k是聲波數 目(仏/乂,其中λ是波長),z是壓力節點的距離,ω是角頻 率,t是時間。在一個例子中,駐波聲場的產生可以透過 形成腔體主要表面的聲波感測器產生的聲波與另一個腔體 主要表面的反射波的重疊來形成。根據由Y〇si〇ka和 KaWasima 發展的理論(Ac〇ustic RadiaU〇n presswe 〇n a Compressible Sphere by Yosioka K. and Kawasima Y. in Acustica, Volume 5? pages 167- 1 73, 1 9 5 5 ),在靜態駐波場中作用在球狀表面的聲場力 由下式給出· 4ττAp (z) = p0 sin (kz) c〇s (cot) where Δρ is the sound pressure at position z, A is the sound pressure amplitude, k is the number of sound waves (仏 / 乂, where λ is the wavelength), and z is the pressure The distance between nodes, ω is the angular frequency, and t is the time. In one example, the generation of a standing wave sound field can be formed by the superposition of a sound wave generated by an acoustic wave sensor forming the main surface of a cavity and a reflected wave of the main surface of another cavity. According to the theory developed by Yosakaka and KaWasima (Ac〇ustic RadiaUon presswe 〇na Compressible Sphere by Yosioka K. and Kawasima Y. in Acustica, Volume 5? Pages 167- 1 73, 1 9 5 5), The sound field force acting on a spherical surface in a static standing wave field is given by: 4ττ
Acoustic = —-yrzk Eacoustic A sin(2Az) 其中r是微粒的半徑,是平均聲場能量密度,A是 由下式給出的常量: 2Pp+Pm rm 其中An和分別是微粒和介質的密度,4和6分別是微 粒和介質的可壓縮性係數。一種物質的可壓縮性係數是材 料的密度與在材料中聲波的速度的乘積。可壓縮性有時也 叫聲波阻尼。A是聲波極化係數。 當A>0,微粒向駐波的壓力節點(2 = 〇)移動。 _____ - 70 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Acoustic = —-yrzk Eacoustic A sin (2Az) where r is the radius of the particle, is the average sound field energy density, and A is a constant given by: 2Pp + Pm rm where An and the density of the particle and the medium, 4 and 6 are the compressibility coefficients of the particles and the medium, respectively. The compressibility factor of a substance is the product of the density of the material and the speed of sound waves in the material. Compressibility is sometimes called sonic damping. A is the acoustic wave polarization coefficient. When A > 0, the particles move to the pressure node (2 = 0) of the standing wave. _____-70-This paper size applies to China National Standard (CNS) A4 (210X297 mm)
裝Hold
線 593683 A7 B7 五、發明説明( ) 68 當A < 0,微粒離開壓力節點。 更清楚的,作用在微粒上的聲波輻射力依賴與聲場能量 密度的分佈和微粒的密度和可壓縮性。當位於相同的駐波 聲場中,不同密度和可壓縮性的微粒將受到不同的聲波輻 射力。作用在1 0微米直徑大小的微粒上的聲波輻射力在 <0.01和> 1 000pN之間變化,具體取決於建立的聲場能 量密皮分佈。 上面的分析考慮了在聲場駐波中施加在微粒上的聲波輻 射力。進一步的分析可以延伸到在行波中施加在微粒上的 聲場輻射力的例子。在這樣的例子中,腔體中的微粒受到 與上面的公式不同的聲場輻射力。下面的文章將提供在行 波與駐波中施加在微粒上的聲場輕射力的詳細的分析: “Acoustic Radiation Pressure on a Compressible Sphere” by Yosioka K. and Kawasima Y. in Acustica,Volume 5, pages 167-173, 1955; and “Acoustic-Radiation force on a solid elastic sphere” by Hasegawa T. and Yosioka K. in Journal of Acoustic Society of America. 作用在微粒上的聲場輻射力也可以透過不同例子的聲波 產生。例如透過聚焦的光束產生聲場力(“Acoustic radiation force on a small compressible sphere in a focused beam” by Wu and Du,J. Acoust· Soc. Am·,87:997-1003 (1990)),或透過聲波鎮 子(“Acoustic tweezers” by Wu J. Acoust. Soc. Am·,89:2140-2143 (1991))〇 在液體上建立的聲波場也可以引入與時間無關的液體的 _____-71 -___ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 B7 五、發明説明(^ ) 69 流動,這叫做聲波流。例如,這樣的聲波流可以用於運輸 或抽吸液體的生物晶片應用或微流體應用中。進一步,這 樣的聲波液體流動也可以用於操作液體中的分子或微粒。 聲波流依賴於聲場的分佈和液體的性質(“Nonlinear phenomena’,by Rooney J.A. in “Methods of Experimental Physics: Ultrasonics,Editor: P.D. Edmonds’’,Chapter 6.4,pages 319-327, Academic Press,1981; “Acoustic Streaming” by Nyborg W.L.M. in “Physical Acoustics,Vol. Π-Part B,Properties of Polymers and Nonlinear Acoustics,Chapter 11,pages 265-330)。 在多力操作晶片中’聲場力產生單元的典型例子包括, 但不限於: (1) 一個使用壓電材料基底的多力操作晶片。電極位於 壓電材料基底的兩個主要表_面,聲波可以由多力操 作晶片基底產生。 (2) —個使用壓電材料基底的多力操作晶片。電極陣列 位於壓電材料基底的兩個主要表面,多個聲波由位 於多力操作晶片基底的特定的電極陣列產生。電極 陣列可以包括單個可選通的電極單元或全部連接在 一起的電極單元。在美國專利Ν〇·6,029,5 1 8中描 述的聲波陣列可以用於這樣的目的。 (3 ) —個不使用壓電材料基底的多力操作晶片。儘管壓 電薄膜可以沈積在基底表面。如此薄的膜可以覆蓋 整個基底並且作為一個聲波產生源。另一種方式, 薄膜可以製成圖案使得可以形成單個可選通的聲波 ____ -72-__ 本紙張尺度適用中國國家襟準(CNS) Α4規格(21〇Χ297公釐) 裝 訂Line 593683 A7 B7 V. Description of the invention () 68 When A < 0, the particles leave the pressure node. More clearly, the radiating force of sound waves acting on particles depends on the distribution of the sound field energy density and the density and compressibility of the particles. When located in the same standing wave sound field, particles of different densities and compressibility will be subjected to different sound wave radiating forces. The radiating force of sound waves acting on particles with a diameter of 10 microns varies between < 0.01 and > 1 000 pN, depending on the dense skin distribution of the established sound field energy. The above analysis considers the radiating force of a sound wave on a particle in a standing wave of the sound field. Further analysis can be extended to the example of the sound field radiating force exerted on a particle in a traveling wave. In such an example, the particles in the cavity are subjected to a sound field radiation force different from the above formula. The following article will provide a detailed analysis of the sound field light force exerted on particles in traveling and standing waves: "Acoustic Radiation Pressure on a Compressible Sphere" by Yosioka K. and Kawasima Y. in Acustica, Volume 5, pages 167-173, 1955; and "Acoustic-Radiation force on a solid elastic sphere" by Hasegawa T. and Yosioka K. in Journal of Acoustic Society of America. The radiating force acting on particles can also pass through the sound waves of different examples produce. For example, “Acoustic radiation force on a small compressible sphere in a focused beam” by Wu and Du, J. Acoust · Soc. Am ·, 87: 997-1003 (1990)), or through Acoustic towns ("Acoustic tweezers" by Wu J. Acoust. Soc. Am ·, 89: 2140-2143 (1991)). The acoustic wave field established on a liquid can also introduce a time-independent liquid _____- 71 -___ This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 593683 A7 B7 V. Description of the invention (^) 69 Flow, which is called sonic flow. For example, such a sonic stream can be used in biochip applications or microfluidics applications that transport or pump liquids. Furthermore, such sonic liquid flow can also be used to manipulate molecules or particles in the liquid. Acoustic current depends on the distribution of the sound field and the properties of the liquid ("Nonlinear phenomena ', by Rooney JA in" Methods of Experimental Physics: Ultrasonics, Editor: PD Edmonds ", Chapter 6.4, pages 319-327, Academic Press, 1981; "Acoustic Streaming" by Nyborg WLM in "Physical Acoustics, Vol. II-Part B, Properties of Polymers and Nonlinear Acoustics, Chapter 11, pages 265-330). Typical example of a 'sound field force generating unit in a multi-force operation wafer Including, but not limited to: (1) A multi-force operation wafer using a piezoelectric material substrate. The electrodes are located on the two main surfaces of the piezoelectric material substrate, and sound waves can be generated by the multi-force operation wafer substrate. (2) one Multi-force operation wafer using piezoelectric material substrate. Electrode arrays are located on the two main surfaces of the piezoelectric material substrate, and multiple acoustic waves are generated by specific electrode arrays located on the multi-force operation wafer substrate. The electrode array may include a single optional Electrode unit or all connected electrode units. Acoustic waves described in US Patent No. 6,029,5 1 8 The column can be used for such purposes. (3) A multi-force operation wafer without using a piezoelectric material substrate. Although a piezoelectric film can be deposited on the substrate surface. Such a thin film can cover the entire substrate and serve as a source of sound waves. Alternatively, the film can be patterned so that a single optional sound wave can be formed. ____ -72 -__ This paper size applies to China National Standard (CNS) A4 specification (21〇 × 297 mm) binding
線 593683 A7 B7 五、發明説明( ) 70 源或連接在一起的聲波源。壓電薄膜可以沈積在多 力操作晶片的一部分或者整個多力操作晶片的表 面。 (4 ) 一個部分使用壓電材料基底的多力操作晶片。電極 可以沈積在基底的一部分來產生聲波源。 (5 )使用非壓電材料製造的能夠在分子或微粒上產特定 類型主動力的主動晶片或生物晶片。然而,一個壓 電感測器(單個的聲波源或一個聲波源的陣列)可以 綁定到一個主動生物晶片上形成一個多力操作晶 片。 在上面所有的例子中,可能包括對聲波產生單元進一步 的變化使得聚焦的聲波束可以使用。例如,聲波棱鏡可以 用於將聲波聚集(e.g·,“Nozzleless droplet formation with focused acoustic beams by Elrod et al,J. Applied Physics, 65.;3441 - 3447 (1989)) ° (II)電場力 電場力指透過電場施加在實體分子(例如微粒,細胞等 等)上的力。電場力有時也叫做電力,電動力。根據場的 構造和在場中實體分子的性質,不同類型的電場力可以施 加在實體分子上。一種類型的電場力是直流電場力,它指 透過直流電場或低頻的交流電場(小於1kHz)在帶電實體 分子(例如分子、細胞、微粒)上產生的力。直流電場力有 時叫做電泳力。另一種類型的電場力是介電電泳力,它指 透過非均勻電場在帶電或中性實體分子上產生的力。電場 _-73-_ 本紙張尺度適用中國國家標準(CNS) A4*格(210 X 297公釐)Line 593683 A7 B7 V. Description of the invention () 70 source or sound source connected together. The piezo film can be deposited on a part of the multi-force wafer or the entire surface of the multi-force wafer. (4) A multi-force operation wafer partially using a piezoelectric material substrate. Electrodes can be deposited on a portion of the substrate to generate a source of acoustic waves. (5) Active wafers or biochips made of non-piezoelectric materials that can produce specific types of main power on molecules or particles. However, a piezoelectric sensor (a single sonic source or an array of sonic sources) can be bound to an active biochip to form a multi-force operation wafer. In all the examples above, further changes to the sound wave generating unit may be included so that the focused sound beam can be used. For example, acoustic prisms can be used to focus acoustic waves (eg ·, "Nozzleless droplet formation with focused acoustic beams by Elrod et al, J. Applied Physics, 65 .; 3441-3447 (1989)) ° (II) electric field force electric field force Refers to the force applied to physical molecules (such as particles, cells, etc.) through an electric field. Electric field forces are sometimes also called electric and electric forces. Depending on the structure of the field and the nature of the physical molecules in the field, different types of electric field forces can be applied On solid molecules. One type of electric field force is a DC electric field force, which refers to the force generated on charged physical molecules (such as molecules, cells, particles) through a DC electric field or a low-frequency AC electric field (less than 1 kHz). DC electric field forces are It is called electrophoretic force. Another type of electric field force is dielectric electrophoretic force, which refers to the force generated on charged or neutral entity molecules through a non-uniform electric field. Electric field _-73-_ This paper size applies to Chinese national standards (CNS ) A4 * grid (210 X 297 mm)
裝 訂Binding
593683 A7 B7 五、發明説明(7l ) 必須是在電場幅度或相位上是非均勾分佈的,並且實體分 子必須與周圍的介質有不同的介電性質使得實體分子在電 場中可以電極化,這樣才能在實體分子上產生非零的介電 電泳力。有兩種類型的介電電泳力,第一種類型的常規的 介電電泳力,第二種類型是行波介電電泳力。關於這些力 的詳細的描述將在後面提供。 11 · A直流電場力 直流電場力指透過直流電場或低頻的交流電場(小於 1 k Η z)在帶電實體分子(例如分子、細胞、微粒)上產生的 力。直流電場力是由於電場與實體分子(例如微粒、分子 或細胞)上的靜電荷交互作用產生的。在施加電場足中作 用在一個微粒上的直流電場力尽圮由下式給出 Fe = QpEzaz 其中…是在微粒上的有效電荷。作用在帶電微粒上的直 流電場力的方向決定於微粒電荷的極性以及施加電場的方 向。 在一個基於多力操作晶片的腔體或基於多力操作晶片的 裝置中用於操作實體分子如分子或微粒的直流電場可以透 過在製造與多力操作晶片(多力晶片)上或集成與基於多力 操作晶片的腔體或基於多力操作晶片的裝置的電極或微電 極單元施加直流電信號來產生。 製造在多力操作晶片上的電極或微電極的典型例子包 括,但不限於,下面的例子: (1 )單個可選通的微電極陣列可以使用。每個單元可以 _-74-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂593683 A7 B7 V. Description of the invention (7l) Must be non-uniformly distributed in the amplitude or phase of the electric field, and the solid molecules must have different dielectric properties from the surrounding medium so that the solid molecules can be electroded in the electric field, so that Generate non-zero dielectrophoretic forces on solid molecules. There are two types of dielectrophoretic forces, the first type is a conventional dielectrophoretic force, and the second type is a traveling wave dielectrophoretic force. A detailed description of these forces will be provided later. 11 · A DC electric field force A DC electric field force refers to the force generated on a charged entity molecule (such as a molecule, a cell, or a particle) through a DC electric field or a low-frequency AC electric field (less than 1 k Η z). DC electric field forces are caused by the interaction of an electric field with the electrostatic charge on a solid molecule, such as a particle, molecule, or cell. The DC electric field force acting on a particle in the applied electric field foot is given by Fe = QpEzaz where ... is the effective charge on the particle. The direction of the DC electric field force on the charged particles depends on the polarity of the particle charge and the direction of the applied electric field. The DC electric field for operating a solid molecule such as a molecule or a particle in a multi-force manipulation wafer-based cavity or a multi-force manipulation wafer-based device can be transmitted through the manufacturing and multi-force manipulation wafer (multi-force wafer) or integrated and The cavity or the electrode or micro-electrode unit of the multi-force operating wafer-based device is generated by applying a direct current signal. Typical examples of electrodes or microelectrodes fabricated on a multi-force operation wafer include, but are not limited to, the following examples: (1) A single selectable microelectrode array can be used. Each unit can be _-74-_ This paper size applies to China National Standard (CNS) A4 (210X297mm) binding
線一 593683 A7Line 1 593683 A7
施加合適的直流電信號使得 場分佈用於分子和微:,和調整直流電 ^ ^ ^兩要的靜電操作。不同的 屯極尺寸/形狀或電極陣列維數可以 (2)所有單元或部分單元連接 吏用。 可以祛m 起的微電極單元陣列 了以使用。不同的電拯尺寸/形 早 以使用。 狀或兒極陣列維數可 μ. ™ ,”叫叩为、多 。ϋ以施加均勻或不均句的直流電場。 11 · Β介電電泳力(介電電泳) 介電電泳力指過非均勻電場在帶 生的力。It+ 4 3 +A+ 兒或中性貫體分子上產 電場交互二 場導致的極化電荷與非均勻 二:二屋生的。極化電荷在實體分子上的導致是由 於咖%和微粒和微粒懸浮的介質的介電性質的不同。 一 ^欠1皆波電場攻〇在時域中可以表示為 ^(0= Υ^Εα^ο^{2τφ + φα)αα "中(α〜χ,y,ζ)疋在一個笛卡兒坐標系中的單位向 量,足〇和%是三個場座標中的幅度和相位。當一個細胞在 這樣的非均勻電場中(&。和/或%隨位置變化),一個淨介 電電泳力作用在細胞上由於場和場導致的偶極子之間的電 交互作用。由 Wang et al 在 article “An unified theory of dielectrophoresis and travelling-wave dielectrophoresis by Wang et al.,J· D.,27:1571-1574 (1994)給出的介電 電泳力公式為: F = 2nsmrz (Re(/CA/ + Im(/CM )(^2〇 V φχ + + £;0 V φζ)) 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 B7 五、發明説明( 數半徑’〜是懸浮於介質中微粒的介電常 數’,“ RMS幅度。係數“七乂)/(«)是介電 數(也叫:la ius_Mossotti係數)。複介電 Γ/d 介電極化係數決定於施加場的頻率 1p)和它的懸浮介質(〜)的電導率^和介 這樣,介電電泳力通常由兩個部分,#Applying a suitable DC signal allows the field distribution to be used for molecular and micro :, and to adjust the DC current ^ ^ ^ two important electrostatic operations. Different pole sizes / shapes or dimensions of the electrode array can be used (2) All units or some units can be connected. An array of microelectrode units can be removed for use. Different electrical rescue sizes / shapes are available early. Dimensions of the shape or pole array can be μ. ™, called “叩”, “multi”. To apply a DC electric field with uniform or uneven sentences. 11 · Β Dielectrophoretic Force (Dielectrophoresis) The force generated by the uniform electric field on the band. It + 4 3 + A + or the neutral penetrating molecule produces an electric field to interact with the polarized charge caused by the two fields and the non-uniform two: generated by the two houses. The polarized charge is caused on the solid molecule. This is due to the difference in dielectric properties between the Ca% and the medium in which the particles and the particles are suspended. ^ 1 and 1 are all wave electric field attacks. In the time domain, it can be expressed as ^ (0 = Υ ^ Εα ^ ο ^ {2τφ + φα) αα " The unit vector of (α ~ χ, y, ζ) 笛 in a Cartesian coordinate system, where 0 and% are the amplitude and phase in three field coordinates. When a cell is in such a non-uniform electric field (&Amp;. and / or% varies with position), a net dielectrophoretic force acting on the cell due to field and field-induced dipole electrical interactions. By Wang et al in article "An unified theory of dielectrophoresis" and travelling-wave dielectrophoresis by Wang et al., J. D., 27: 1571-1574 (1 The formula of the dielectrophoretic force given by 994) is: F = 2nsmrz (Re (/ CA / + Im (/ CM) (^ 2〇V φχ + + £; 0 V φζ)) CNS) A4 specification (210X297 mm) 593683 A7 B7 5. Description of the invention (Number radius '~ is the dielectric constant of the particles suspended in the medium', "RMS amplitude. The coefficient" Seven 乂 "/ («) is the dielectric number (Also called: la ius_Mossotti coefficient.) The complex dielectric Γ / d dielectric polarization coefficient is determined by the frequency of the applied field 1p) and the conductivity of its suspension medium (~). Sections, #
泳力和行波介電電泳力。常規介電$、、 σ吊J兒電 的同步相聯繫(由預4 :)二:力與場導致的極化 場強的梯度(▽()相關。係數,)有‘為 裝 二數=、介電電泳力和場誘導杨化的異相部分(由 M/cm)員反應),目數y·復的虛部與場相梯度相關(% , ▽%,▽%)。Im(/cM)項有時稱為行波介電電泳因數。: 訂 ("//. 5. / j常規介電電泳力Swimming force and traveling wave dielectrophoresis force. Synchronization of conventional dielectrics $ ,, σ, and J is related to synchronization (by pre 4 :) 2: The force is related to the gradient of the polarized field strength caused by the field (▽ (). The coefficient,) has' = 2 , Dielectrophoretic force and field-induced Yanghua's heterophasic part (by M / cm) member response), the imaginary part of the mesh number y · complex is related to the field phase gradient (%, ▽%, ▽%). The term Im (/ cM) is sometimes called the traveling wave dielectric electrophoresis factor. : Order (" //. 5. / j Conventional Dielectrophoretic Force
苇規介笔笔永力指由一個交流電場場強非均勻分配產生 在組分上的力。文獻中,常規介電電泳力有時簡稱為介電 電泳力。出於明晰的目的,作為術語這種簡化應避免。如 文獻 An unified theory of dielectrophoresis and travelling-wave dielectrophoresis by An unified theory of dielectrophoresis and travelling-wave dielectrophoresis by Wang et al· J. P/zys. Z)··却〆. Phys. 27:1571-1574, (1994))和 “ Non-uniform spatial distributions of both the magnitude and phase of AC electric fields determine dielectrophoretic forces by Wang et al.? Biochim ___-76- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) 593683 A7 B7 五、發明説明( 5/〇户/2:^」价7, 1243:185-194 (1995),“介電電泳力”作為一種 通用術語包括常規介電電泳和行波介電電泳。常規介電電 泳力指由一個交流電場場強非均勻分配產生在組分上的 力。行波介電電泳力指由行波電場產生的作用在上的力 (或場成分的相位非均勾分配). 作用在半徑為r的一個粒子上常規介電電泳力由下 式給出的非均勻場強的電場決定, ^DEPZ ~ ^πετην ZDEP^^rms 這裏五_是場強的RM S值,、是介質的介電常數。這個 常規介電電泳力的方程前面描述過的介電電泳力的通用運 算式是一致。因數是粒子極化因數,由下式給出,The reed gauge pen force refers to the force on the component caused by the non-uniform distribution of the AC electric field strength. In the literature, conventional dielectrophoretic forces are sometimes referred to simply as dielectrophoretic forces. This simplification as a term should be avoided for clarity. For example, An unified theory of dielectrophoresis and travelling-wave dielectrophoresis by An unified theory of dielectrophoresis and travelling-wave dielectrophoresis by Wang et al. J. P / zys. Z). But 〆. Phys. 27: 1571-1574, ( (1994)) and "Non-uniform spatial distributions of both the magnitude and phase of AC electric fields determine dielectrophoretic forces by Wang et al.? Biochim ___- 76- This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 (Mm) 593683 A7 B7 V. Description of the invention (5 / 〇 户 / 2: ^ ”Price 7, 1243: 185-194 (1995),“ Dielectrophoretic force ”as a general term includes conventional dielectrophoresis and traveling waves Dielectric electrophoresis. Conventional dielectric electrophoretic force refers to the force generated on a component by the non-uniform distribution of the field strength of an alternating electric field. Phase non-uniform distribution). A conventional dielectrophoretic force acting on a particle of radius r is determined by the electric field of the non-uniform field strength given by Is the field strength's RM S value, and is the dielectric constant of the medium. The equation of this conventional dielectric electrophoretic force is the same as the general calculation formula of the dielectric electrophoretic force. The factor is the particle polarization factor, which is given by Out,
Xdep ~ ε — ε “ RE ”指複數的實數部分。符號 < =心-是複合介 電常數(粒子X = p,介質X = m)。參數。。和。。分別是 有效介電常數和粒子電導率。這些參數常可以是互相依賴 的。例如,一個典型的生物細胞將由頻度依賴性,有效電 導率和介電常數,至少因為細胞質膜的極化。 上面常規介電電泳力的方程也可以寫成 Ρ'ΟΕΡ=2πεηιΓ3χΟΕΡΥ2(νιρ) 這裏Ρ (X,y,ζ)是電極上一個單位電壓激動的方場分 配,V是使用的電壓。 粒子如生物細胞有不同的介電性質(如上的介電常數和 電導率)將受到不同的介電電泳力(常規和行波介電電泳 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) -77- 593683 A7 ___ B7 五、發明説明( ) 75 力)。對於一個粒子的介電電泳操作,常規力作用在一個 直徑1 0微米的粒子上,能夠在〇 · 〇 1到1 0 〇 〇 ΟρΝ之間變 化 一個非均勻電場能夠可以被建立在一個基於多力操作晶 片的室中,透過應用一個交流信號A C給微電極整合在多 力操作晶片(多力晶片)結構中的。多種電極成分陣列和電 極陣列可以被使用。大量的介電電泳電極在文獻中報道的 可以用’包括相互錯位式城堡電極,多項電極,螺旋電 極0 1243:185-194 (1995),’; “Electrode design for negative dielectrophoresis, by Huang and Pethig, Meas. Sci. TechnoL, 2_:1142-1146 (1991)”; “Positive and negative dielectrophoretic collection of colloidal particles using interdigitated castellated microelectrodes by Pethig et al.? J. Phys. D: Appl Phys., 25:881-888 (1992)’’; “Three-dimensional electric field traps for manipulation of cells - calculation and experimental verification by Schnelle et al.5 Biochim. Biophys. Acta., 1157:127-140 (1993)”,“A 3-D microelectrode system for handling and caging single cells and particles, by Mliller, et al.? Biosensors and Bioelectronics, M:247-256 (1999),,; “Dielectrophoretic field cages: technique for cell,virus and marcromolecule handling, by Fuhr et al.5 Cellular Engineering., Autumn, pages 47-57 (1995)^; “Electrocasting - formation and structuring of suspended microbodies using A.C. generated field cages, by Fiedler S. et al.5 ____-78-__ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 B7 五、發明説明( ) 76Xdep ~ ε — ε "RE" refers to the real part of a complex number. The symbol < = heart- is the composite dielectric constant (particle X = p, medium X = m). parameter. . with. . These are the effective dielectric constant and the particle conductivity. These parameters can often be interdependent. For example, a typical biological cell will consist of frequency dependence, effective conductivity and dielectric constant, at least because of the polarization of the plasma membrane of the cell. The above equation of conventional electrophoretic force can also be written as P′ΟΕΡ = 2πεηιΓ3χΟΕΡΥ2 (νιρ) where P (X, y, ζ) is a square field distribution excited by a unit voltage on the electrode, and V is the voltage used. Particles such as biological cells have different dielectric properties (such as the above-mentioned dielectric constant and conductivity) and will be subjected to different dielectric electrophoretic forces (conventional and traveling-wave dielectric electrophoresis. This paper applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) -77- 593683 A7 ___ B7 V. Description of the invention () 75 force). For the electrophoretic operation of a particle, a conventional force acts on a particle with a diameter of 10 micrometers, which can vary between 〇 · 〇1 and 100 〇〇〇ρρΝ. A non-uniform electric field can be established based on a multi-force In the wafer handling chamber, an AC signal AC is applied to the micro-electrodes integrated in the structure of the wafer for multi-force manipulation (multi-force wafer). A variety of electrode component arrays and electrode arrays can be used. A large number of dielectric electrophoretic electrodes reported in the literature can be used 'including mutual offset castle electrodes, multiple electrodes, spiral electrodes 0 1243: 185-194 (1995),'; "Electrode design for negative dielectrophoresis, by Huang and Pethig, Meas. Sci. TechnoL, 2_: 1142-1146 (1991) ";" Positive and negative dielectrophoretic collection of colloidal particles using interdigitated castellated microelectrodes by Pethig et al.? J. Phys. D: Appl Phys., 25: 881-888 (1992) ''; “Three-dimensional electric field traps for manipulation of cells-calculation and experimental verification by Schnelle et al. 5 Biochim. Biophys. Acta., 1157: 127-140 (1993)”, “A 3-D microelectrode system for handling and caging single cells and particles, by Mliller, et al.? Biosensors and Bioelectronics, M: 247-256 (1999) ,; "Dielectrophoretic field cages: technique for cell, virus and marcromolecule handling, by Fuhr et al.5 Cellular Engineering., Autumn, pages 47-57 (1995) ^; "Electrocasting-formation and structuring of suspended microbodies using AC generated field cages, by Fiedler S. et al. 5 ____- 78 -__ This paper size applies to China National Standard (CNS) A4 (210X297 mm) 593683 A7 B7 V. Description of the invention () 76
Microsystem Technologies., 2:1-7, (1995)’’; “Dielectrophoretic sorting of particles and cells in a microsystem, by Fiedler et al.? Anal· Chem.,70:1909-1915 (1998),,· 可以使用可單個選通的微電極陣列,每一個元件可施加 交流信號以建立非均勻分佈的電場,並可調節以適於對分 子和微粒進行介電操作。各種尺寸和幾何形狀的電極或各 種尺寸的電極陣列均可能用到。 在微電極元件陣列中,其中所有的元件或其中部分元件 是相互連接的,各種電極幾何形狀、各種電極尺寸、各種 電極陣列尺寸均可能用到。 電極元件可以覆蓋整個或是一部分多力操作晶片的表 面。 (II.B.2)行波介電電泳力 行波介電電泳力指的是實體分子(微粒或分子)處於行波 電場中而受到的力。行波電場的特點是其交流電場分量的 相位值是不均勻分佈的。 在此,我們分析一個理想的行波電場的行波介電電場 力。在行波電場£=jEe°St2;r(/i-z/A())>x(例如一個X方向的電 場沿z方向運行時)中作用於半徑為r的粒子的介電電泳力 F F2 -Microsystem Technologies., 2: 1-7, (1995) ''; “Dielectrophoretic sorting of particles and cells in a microsystem, by Fiedler et al.? Anal · Chem., 70: 1909-1915 (1998), can be With a single-gated microelectrode array, each element can apply an AC signal to create a non-uniformly distributed electric field, and can be adjusted for dielectric manipulation of molecules and particles. Electrodes of various sizes and geometries or various sizes All electrode arrays may be used. In microelectrode element arrays, all or some of them are connected to each other, and various electrode geometries, various electrode sizes, and various electrode array sizes may be used. Electrode elements can cover (II.B.2) Traveling wave dielectrophoresis force Traveling wave dielectrophoresis force refers to the force that a solid molecule (particle or molecule) is subjected to in a traveling wave electric field. The characteristic of the wave electric field is that the phase values of its AC electric field components are unevenly distributed. Here, we analyze the traveling wave dielectric electric field of an ideal traveling wave electric field Dielectric electrophoretic force F acting on particles of radius r in a traveling wave electric field £ = jEe ° St2; r (/ iz / A ())> x (for example, when an electric field in the X direction runs in the z direction) F2-
^ 人 A a 、、 — I X L. rt^DEP - : r hTWD11 'az ,, , J F t w介電電冰可以由公式 ^ 給出,其 中E是場強、、是介質的介電常數、<_是粒子的極化因^ Human A a, —— IX L. rt ^ DEP-: r hTWD11 'az ,,, JF tw The dielectric electric ice can be given by the formula ^, where E is the field strength, is the dielectric constant of the medium, < _ Is the polarization factor of the particle
/ ♦ * N 广 _ £P~ £m btwDEP ~~i 數,Ctto由下列公式給出 (〜+〜」,其中I m指的是 複數的虛數部分,符號〜=心n/2#是(粒子χ^ρ和介質 _-79-__ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X297公釐) 593683 A7 B7 77 五、發明説明( x = m的)複合介電常數,參數、 今I和Ρ分別是有效介電常數 和粒子的電導率,這些參數是頻率依_0卜 如生物細胞等具有不同的介電性質粒子(如介電常數、 電導率所定義的)將表現出不同的 < U的介電電泳力。對粒子(包 括生物細胞)的行波介電電泳搡作也 π课彳乍來說,載入於一個直徑 為1 0微米的粒子上的行波介雷+、、丄 J)丨可電冰力可以在〇 · 〇 i 一 ΙΟΟρΝ之間變化。 裝 行波介電場可以透過給與多力操作晶片結構相連的微電 極通以適當的交流信號而在基於多力操作晶片的反應器或 儀器中建ϋ起來。^ 了產生行波場,必須採用至少三種分 別具有不同相位值的電信號。一種方法是用四相正交信號 (0,9 0,1 8 0和2 7 0度)給晶片表面四種線性的、平行的 電極加以電壓。這樣四種電極就形成一個基本的、重復性 的單元。在大多數情況下,至少需要兩個這樣的靠在一起 的單元’他們就可在其上面或周圍產生行波電場。另一種 方法似像文獻 Dielectrophoretic manipulation of cells using spiral electrodes by Wang et al.3 Biophys. J.3 72:1887-1899 (1997)”·中描述的那樣透過給四個平行的螺旋形電極元件施 加四項正交信號來產生行波電場。只要電極元件按一定的 空間順序排列,施加連續相位的信號就可以在電極周圍產 生行波電場。 具體的行波介電電泳電極分別包括四個平行的線狀螺旋 形電極 '平行的線形電極、螺旋形電極。詳見文獻 (^Dielectrophoretic manipulation of cells using spiral electrodes 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) -80- 593683 A7 B7 五、發明説明(% ) by Wang et al·, Biophys. J., 72:1887-1899 (1997),,; “Dielectrophoretic Manipulation of Particles by Wang et al,IEEE Transaction on Industry Applications, 33(3):660-669(1997)”, “Electrokinetic behavior of colloidal particles in traveling electric fields: studies using yeast cells by Huang et al, J. Phys. D: Appl. Phys” 26:1528-1535”,“Positioning and manipulation of cells and microparticles using miniaturized electric field traps and traveling waves. By Fuhr et al·,Sensors and Materials” 7:131-146”,“Non-uniform spatial distributions of both the magnitude and phase of AC electric fields determine dielectrophoretic forces by Wang et al.? Biochim Biophys Acta., 1243:185-194 (1995)”· 與其他類型的物理力相比行波介電電泳力具有一個獨特 的性質,那就是它能在一維或二維空間裏(沿直線或平的 表面上的某一軌道線)傳送粒子。例如,多力操作晶片可 以包括多個單元(或反應中心),行波介電電泳力可用於在 這些單元之間運送物質(如粒子或分子-粒子的複合物)。/ ♦ * N 广 _ £ P ~ £ m btwDEP ~~ i number, Ctto is given by the following formula (~ + ~ ”, where I m refers to the imaginary part of the complex number, and the symbol ~ = 心 n / 2 # 是 ( Particle χ ^ ρ and medium _-79 -__ This paper size is applicable to China National Standard (CNS) A4 specification (210 X297 mm) 593683 A7 B7 77 V. Description of the invention (x = m) Composite permittivity, parameters, Now I and P are the effective dielectric constant and the electrical conductivity of the particles. These parameters are based on the frequency. For example, biological cells and other particles with different dielectric properties (as defined by the dielectric constant and electrical conductivity) will show Diverse electrophoretic forces of <U. Traveling wave dielectric electrophoresis of particles (including biological cells) is also described at first. Travelling wave dielectrics loaded on a particle with a diameter of 10 microns (+ ,, 丄 J) 丨 The electric ice force can be changed between 〇 · 〇i-ΙΟΟρΝ. The traveling wave dielectric electric field can be applied to the micro-electrodes connected to the multi-force operation chip structure by passing an appropriate AC signal. Built in a reactor or instrument based on multi-force operation of the wafer. ^ In order to generate a traveling wave field, it is necessary to At least three types of electrical signals with different phase values are used. One method is to apply four linear, parallel signals (0, 90, 180, and 270 degrees) to four linear, parallel electrodes on the wafer surface. In this way, the four electrodes form a basic, repetitive unit. In most cases, at least two such units need to be close together. 'They can generate a traveling wave electric field on or around them. Another method is like As described in the document Dielectrophoretic manipulation of cells using spiral electrodes by Wang et al.3 Biophys. J.3 72: 1887-1899 (1997) ", four orthogonal signals are applied to four parallel spiral electrode elements by applying To generate a traveling wave electric field. As long as the electrode elements are arranged in a certain spatial sequence, a continuous phase signal can be applied to generate a traveling wave electric field around the electrode. Specific traveling wave dielectric electrophoretic electrodes include four parallel linear spiral electrodes, respectively. 'Parallel linear electrodes, spiral electrodes. See the literature for details (^ Dielectrophoretic manipulation of cells using spiral electrodes) National Standard (CNS) A4 specification (210X297 mm) -80- 593683 A7 B7 V. Description of invention (%) by Wang et al ·, Biophys. J., 72: 1887-1899 (1997) ,; "Dielectrophoretic Manipulation of Particles by Wang et al, IEEE Transaction on Industry Applications, 33 (3): 660-669 (1997) "," Electrokinetic behavior of colloidal particles in traveling electric fields: studies using yeast cells by Huang et al, J. Phys D: Appl. Phys "26: 1528-1535", "Positioning and manipulation of cells and microparticles using miniaturized electric field traps and traveling waves. By Fuhr et al., Sensors and Materials" 7: 131-146 "," Non -uniform spatial distributions of both the magnitude and phase of AC electric fields determine dielectrophoretic forces by Wang et al.? Biochim Biophys Acta., 1243: 185-194 (1995) "Compared with other types of physical forces, traveling wave dielectrics Electrophoretic force has a unique property, that is, it can be in a one-dimensional or two-dimensional space (along a certain orbit line on a straight or flat surface). Transmitting particles. For example, a multi-force operation wafer can include multiple units (or reaction centers), and traveling wave dielectrophoretic forces can be used to transport substances (such as particles or molecular-particle complexes) between these units.
行波介電電泳力也可用於控制、開關、引導粒子透過粒 子開關或微粒子開關,就像名為 “METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS,, (by Wang et al·,filed on August 10, 2000)的美國專利中描述的 一樣。其專利中的各種電極結構都可以用於多力操作晶片 中並用來用行波介電電泳力操作、控制粒子和物質。例 如,在一個具體的微粒子開關中,它至少包括能分別產生 .... ......- _- 81 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂Traveling-wave dielectrophoretic forces can also be used to control, switch, and guide particles through particle switches or particle switches, like the one called "METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS," (by Wang et al., Filed on August 10, 2000) The same is described in the U.S. patent. The various electrode structures in the patent can be used in multi-force manipulation wafers and used to operate and control particles and substances with traveling wave dielectric electrophoretic force. For example, in a specific particle switch, it At least including the ability to produce separately ....- _- 81-This paper size applies to China National Standard (CNS) A4 (210X297 mm) binding
A7A7
φ a b ^執遒運送微粒的行波介電電泳力的三組電極,其 這一私極相互間具有電源的獨立性,並且這些軌道可以 ^一個公共的接合點相互連通以便使行波介電電泳力能夠 把粒子從一條軌道運送到另一條軌道。 (111)磁場力 磁場力指的是由於電場的存在而使微粒等實體分子所受 到的力 般來說,要想有足夠的磁場力來操作粒子,粒 子必眉此夠被磁化或極化。我們來考量一個由順磁性物質 組成的典型磁性微粒的例子,當這種粒子被放到磁場_ ^^piXp-Xn)—, 時,粒子就會產生磁偶極只,瓦其中,6是 粒子的體積,心和Xn分巧是粒子及其周圍介質的磁化係 數,是介質的磁導率,扎是磁場強度。加在粒子上的磁 予力&可以透$,間磁偶極和磁場梯度得到 ,其中符號“·,,和分別指 的是點積和梯度產生的結果。很明顯是否有磁場力加在微 粒上取決於粒子和其周圍介質間的磁化係數。一般粒子是 被懸於非磁性的液體介質中(其磁化係數接近於零),因此 必須利用磁性微粒(其磁化係數遠大於0 )。在磁場力與粒 附力達_到平衡時粒子的速度vparticle可由下式給出 一 ^magnetic particle — ^ π%其中,r是粒子的半徑’ η m使周圍介質的枯 性。因此’為得到足夠大的磁操作力,必須考慮以下因 素:(1)粒子的磁化性應最佳化,(2 )磁場強度應最大化, ____- 89 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 五、發明説明( ) 80 (3)磁場的場強梯度應最佳化。 在基於多力操作晶片的反應器中給微電磁元件通以電流 就可以產生磁場,每一個微電磁元件根據所通的直流或交 流電流都可以產生相應的磁場。一個電磁元件可以是一根 電線繞成的一個環或者圍繞一個磁性核而繞成的線圈。許 多類型的電磁元件已經在1 9 9 9年9月1 6日提出申請的 專利號為09/3 99299的專利中描述過了,可透過參考其 全部參考文獻而組成一體。 用於多力操作晶片的其他電磁元件的例子包括、但不限 於以下這些:Ahn,C·,et al·,J· Microelectromechanical Systems. Volume 5: 151-158 (1996); Ahn? C.? et al.5 IEEE Trans. Magnetics. Volume 30: 73-79 (1994); Liakopoulos et al.? in Transducers 97,pages 485-488,presented in 1997 International Conference on Silid-State Sensors and Actuators,Chicago,June 16-19, 1997; US patent No. 5,883,760 by Naoshi et al.. 作為一個具體的例子,多力操作晶片可以由單點可選通 的電磁元件的陣列組成。這些元件都是按照一定的順序安 置或進行結構上的安排以便當其中一個、一些或全部元件 被施加電壓(或磁化)時能產生理想的磁場分佈從而產生用 於操作磁性微粒的磁場力。然而,多力操作晶片也可以由 多個相互連通的電磁元件組成以便能夠對這些元件進行同 步的開或關。當然,多力操作晶片也可以僅包含一個通電 後能產生磁場的電磁元件。 對磁性微粒的操作包括直線運動、聚焦運動、謗導運動 ____ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 593683 A7 B7 五、發明説明() 〇1 等。磁性微粒再次場中的運動被稱為“磁泳”。用於細胞 分離和其他用途的有關磁泳的理論和實例可以在許多文獻 中見到。(如:Magnetic Microspheres in Cell Separation, by Kronick, P. L. in Methods of Cell Separation, Volume 3, edited by N. Catsimpoolas, 1980,pages 115-139; Use of magnetic techniques for the isolation of cells, by Safarik I. And Safarikova M.? in J. of Chromatography, 1999, Volume 722(B), pages 33-53; A fully integrated micromachined magnetic particle separator, by Ahn C. H. et al., in J. of Microelectromechanical systems, 1996, Volume 5, pages 151-157) (IV)光場力 光場力指的是由於光強梯度的存在而使微粒或細胞等實 體分子所受到的力,它有時也被稱作光輕射力。當粒子被 放到在空間上不均一的光強場中時輻射力就施加到粒子 上,這種輻射力的大小依賴於粒子大小、光強分佈、粒子 的折射率及周圍介質等因素。許多文獻都對這種力進行了 詳細描述(“Laser trapping in cell biology,by Wright et al·,in IEEE J. of Quantum Electronics, 1990, Volume 26, pages 2148-2157”; “Laser manipulation of atoms and particles,by Chu S. in Science,1991,Volume 253, pages 861-866”)。當一種折射率與 其周圍介質不同的材料(如微粒等)被放到梯度光場中時所 受到的光場力就是所謂的梯度力。當光透過可極化的材料 時,它將產生瞬間偶極。這些偶極與電磁場梯度互相作 用,當這些材料的折射率大於其周圍介質時就會產生一個 ___ >- 84 ~_. 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 __ B7 五、發明説明( ) 82 指向光的明亮區域的力。相反,當某物質的折射率小於周 圍介質時,它將受到一個將其拉向光較暗的區域的力。 光場力或光輻射力已經用於光鉗來對微粒進行聚合、捕 獲、浮動和操作。光鉗一般是單光束梯度鐳射管。有關光 鉗的各種生物學應用的理論和實例已經由許多文獻進行了 詳細描述(如:“Making light work with optical tweezers,by Block S· M·,in Nature,1992,Volume 360,pages 493-496”; “Forces of a single-beam gradient laser trap on a dielectric sphere in the ray optics regime,by Ashkin,A·,in Biophys. J·,1992, Volume 61,pages 569-582”; “Laser trapping in cell biology,by Wright et al.,in IEEE J· of Quantum Electronics,1990,Volume 26,pages 2148-2157”; “Laser manipulation of atoms and particles,by Chu S. in Science, 1991,Volume 253,pages 861-866”) 。 為了在以多力操作晶片為基礎的反應器或儀器中產生光 場輕射力,需產生光場和/或光強場,例如可透過多力操 作晶片的内置式光學元件和陣列及外置光源或透過多力操 作晶片的内置式光電元件和陣列及外部結構的電信號源。 在前一種情況下,當光信號源產生的光透過内置的光學元 件和陣列時,光就被這些元件/陣列透過反射、聚焦、干 涉等進行處理,光場在多力操作晶片周圍區域產生。在後 一種情況下,當外置的電信號源產生的電信號被内置的光 電元件和陣列吸收後,它們就會產生光,圍繞多力操作晶 片就產生光場。也可用其他方法使多力操作晶片產生光 -----85-_ 本紙張尺度適用中國國家榡準(CNS) A4規格(21〇 X 297公釐)φ ab ^ Three sets of electrodes that carry the traveling wave dielectric electrophoretic force of the particles. This private pole has independent power from each other, and these tracks can communicate with each other at a common junction to make the traveling wave dielectric. Electrophoretic forces can transport particles from one orbit to another. (111) Magnetic field force Magnetic field force refers to the force that is exerted on solid molecules such as particles due to the existence of an electric field. Generally speaking, if there is sufficient magnetic field force to manipulate particles, the particles must be sufficiently magnetized or polarized. Let's consider an example of a typical magnetic particle composed of a paramagnetic substance. When this particle is placed in a magnetic field _ ^ piXp-Xn) —, the particle will produce a magnetic dipole only, where 6 is the particle The volume, the center, and the Xn fraction are the magnetic susceptibility of the particle and the surrounding medium, the magnetic permeability of the medium, and the magnetic field strength. The magnetic pre-force applied to the particle can be obtained through $, indirect magnetic dipoles, and magnetic field gradients, where the symbols “·,” and, respectively, refer to the results of the dot product and the gradient. It is obvious whether there is a magnetic field force added to the The particle depends on the magnetic susceptibility between the particle and its surrounding medium. Generally, particles are suspended in a non-magnetic liquid medium (its magnetic susceptibility is close to zero), so magnetic particles must be used (its magnetic susceptibility is much greater than 0). When the magnetic field force and particle attachment force reach equilibrium, the particle velocity vparticle can be given by ^ magnetic particle — ^ π% where r is the radius of the particle 'η m makes the surrounding medium dry. Therefore,' to get enough For large magnetic operating forces, the following factors must be considered: (1) the magnetizability of particles should be optimized, (2) the magnetic field strength should be maximized, ____- 89-This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 593683 A7 B7 V. Description of the invention () 80 (3) The field strength gradient of the magnetic field should be optimized. A magnetic field can be generated by applying a current to a micro-electromagnetic element in a reactor based on a multi-force operation wafer. each A micro-electromagnetic component can generate a corresponding magnetic field according to the DC or AC current passed. An electromagnetic component can be a ring wound by a wire or a coil wound around a magnetic core. Many types of electromagnetic components are already in The patent No. 09/3 99299 filed on September 16, 1999 is described in the patent, which can be integrated by referring to all its references. Examples of other electromagnetic components for multi-force operation of wafers Including but not limited to the following: Ahn, C., et al., J. Microelectromechanical Systems. Volume 5: 151-158 (1996); Ahn? C.? Et al. 5 IEEE Trans. Magnetics. Volume 30: 73 -79 (1994); Liakopoulos et al.? In Transducers 97, pages 485-488, presented in 1997 International Conference on Silid-State Sensors and Actuators, Chicago, June 16-19, 1997; US patent No. 5,883,760 by Naoshi et al .. As a specific example, a multi-force operation chip can be composed of an array of single-point selectable electromagnetic components. These components are arranged or arranged in a certain order. So that when one, some or all of the components are applied with voltage (or magnetization), it can generate the ideal magnetic field distribution and generate magnetic field force for operating magnetic particles. However, the multi-force operation wafer may also be composed of a plurality of interconnected electromagnetic components so that these components can be turned on or off in synchronization. Of course, the multi-force operation chip may also include only one electromagnetic element capable of generating a magnetic field after being energized. Operations on magnetic particles include linear motion, focusing motion, and defamatory motion ____ This paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) 593683 A7 B7 V. Description of the invention () 〇1 and so on. The movement of magnetic particles in the field again is called "magnetophoresis". Theories and examples of magnetophoresis for cell separation and other uses can be found in many literatures. (Such as: Magnetic Microspheres in Cell Separation, by Kronick, PL in Methods of Cell Separation, Volume 3, edited by N. Catsimpoolas, 1980, pages 115-139; Use of magnetic techniques for the isolation of cells, by Safarik I. And Safarikova M.? In J. of Chromatography, 1999, Volume 722 (B), pages 33-53; A fully integrated micromachined magnetic particle separator, by Ahn CH et al., In J. of Microelectromechanical systems, 1996, Volume 5, pages 151-157) (IV) Light field force Light field force refers to the force that is exerted on solid molecules such as particles or cells due to the existence of a light intensity gradient. It is also sometimes called light light force. When a particle is placed in a non-uniform light intensity field, the radiation force is applied to the particle. The magnitude of this radiation force depends on the particle size, light intensity distribution, particle refractive index, and surrounding media. Many literatures describe this force in detail ("Laser trapping in cell biology, by Wright et al., In IEEE J. of Quantum Electronics, 1990, Volume 26, pages 2148-2157"; "Laser manipulation of atoms and particles, by Chu S. in Science, 1991, Volume 253, pages 861-866 "). When a material with a refractive index different from that of the surrounding medium (such as particles) is placed in the gradient light field, the light field force is called the gradient force. When light passes through a polarizable material, it creates an instantaneous dipole. These dipoles interact with the gradient of the electromagnetic field. When the refractive index of these materials is greater than the surrounding medium, a ___ >-84 ~ _. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 593683 A7 __ B7 V. Description of the invention () 82 Force directed at the bright area of light. Conversely, when the refractive index of a substance is smaller than that of the surrounding medium, it will be subjected to a force that pulls it toward the darker areas of light. Light field forces or radiative forces have been used in optical clamps to aggregate, capture, float, and manipulate particles. Optical clamps are generally single-beam gradient laser tubes. Theories and examples of various biological applications of optical forceps have been described in detail in many literatures (eg "Making light work with optical tweezers, by Block S · M ·, in Nature, 1992, Volume 360, pages 493-496 "; Forces of a single-beam gradient laser trap on a dielectric sphere in the ray optics regime, by Ashkin, A., in Biophys. J., 1992, Volume 61, pages 569-582"; "Laser trapping in cell biology, by Wright et al., in IEEE J. of Quantum Electronics, 1990, Volume 26, pages 2148-2157 ";" Laser manipulation of atoms and particles, by Chu S. in Science, 1991, Volume 253, pages 861- 866 "). In order to generate light field light in a reactor or instrument based on a multi-force operation wafer, a light field and / or an intensity field need to be generated, such as built-in optical elements and arrays and external devices that can operate the wafer through multi-force operation Light source or built-in photoelectric element and array through multi-force operation chip and electric signal source of external structure. In the former case, when the light generated by the optical signal source passes through the built-in optical elements and arrays, the light is processed by these elements / arrays through reflection, focusing, interference, etc., and the light field is generated in the area around the multi-force operation wafer. In the latter case, when the electrical signals generated by the external electrical signal source are absorbed by the built-in photoelectric elements and arrays, they will generate light, and a light field is generated around the multi-operated wafer. Other methods can also be used to make the multi-manipulation wafer produce light ----- 85-_ This paper size is applicable to China National Standard (CNS) A4 (21〇 X 297 mm)
83 場’從而產生光場力。 光錯可用於在本發明中的儀器上施加光場力,各種各樣 的結構都可用力多力操作晶片或儀器中以便於在儀器或多 力操作晶片為基礎的反應器中引入單或多重光鉗。單光鉗 可以在儀器的特定位置使用,被用來操作、吸引或排斥粒 子、分子或分子複合物。另一方面,多光鉗則可以在儀器 的許多位置使用。 光場力或光輕射力可用於對粒子或分子進行定位、控 制、操作。例如,粒子可以被一種光鉗所決定的光強場進 行捕獲’或被光鉗陣列產生的光場進行光謗導或轉換。 (V) ·機械力 機械力指的是在某種介質中由於速度場的存在而使實體 分子所受到的力,在其中實體分子可以被懸浮、溶解或定 位。我們考慮當一種直徑為%、密度為6的球狀粒子被放 在速度場、中的情況。粒子的速度可由下面的方程式給 P _ \ ^ 、 * : ^ r ( w %) + Λ其中,t是時間,、是介質的速度, A是加在粒子上包括重力在内的综合力,Γ粒子鬆弛時間 r = _4^_ , 由下式定義:Re〃其中,是介質的粘度,C〇是阻力 D. JU-~Up\DpPm83 field ’, which produces a light field force. Optical errors can be used to apply light field forces to the instrument of the present invention. Various structures can be used to operate the wafer or the instrument with multiple forces to facilitate the introduction of single or multiple elements into the instrument or multi-force operated wafer-based reactor. Optical forceps. Single optical forceps can be used at specific locations on the instrument to manipulate, attract, or repel particles, molecules, or molecular complexes. Multi-optic clamps, on the other hand, can be used in many locations on the instrument. Light field force or light light force can be used to locate, control, and operate particles or molecules. For example, particles can be captured by a light intensity field determined by an optical clamp 'or light-guided or converted by a light field generated by an optical clamp array. (V) · Mechanical force Mechanical force refers to the force on a solid molecule due to the existence of a velocity field in a certain medium, in which the solid molecule can be suspended, dissolved or positioned. We consider the case when a spherical particle with a diameter of% and a density of 6 is placed in the velocity field. The velocity of a particle can be given by P _ \ ^, *: ^ r (w%) + Λ Particle relaxation time r = _4 ^ _, which is defined by the formula: Re〃 where is the viscosity of the medium and C is the resistance D. JU- ~ Up \ DpPm
Rp -----— 係數,P是粒子的雷諾常數,由下式定義 ^ 其中,A是介質的密度,上述方程中右邊第一項是作用於粒 子的S t 〇 k e s阻力的概括。眾所周知,加在球形粒子上的 Stokes力可由下式算出:心—-〜=3奶〆心—\)〜,St()kes 力是由於介質間的相對速度而加在粒子上的力。因 ___-86- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 84593683 A7 B7 五 發明説明( 此,當一種粒子(或各種其他類型的moiety)被放在速度 場、中時,一種機械(S t 〇 k e s阻力)將施加在粒子上使粒子 以與其所在處的介質的速度相同的速度移動。這樣一種機 械力可影響粒子的位置、速度及其它動力學行為,並可用 於操作粒子。 介質的速度場指的是移動的介質的速度分佈。介質的 速度可由下列方程給出: (dum ^ \ Γ η Ρ〇[^Γ + = + Pof + - P〇g βτ(Τ-Τ0) + ^Cncn L n 八是介質在溫度r。時的密度,t是介質的速度,p是介 質内的壓力,7加在介質上的重量,f是重力加速度向 量,外是與溫度變化有關的體積擴張係數,I是與介質種 類有關體積擴張係數。在以上這些參數中,除了 和-外,均為與其在介質中的位置有關的函數。 根據上述方程,可用幾種不同的方法來改變介質的速度 場。(1)改變介質内的壓力,(2)對介質施加體積力,(3) 改變介質溫度或溫度梯度,(4)改變各種介質的濃度。在 此我們分析幾種能產生速度場,從而能產生對介質中的實 fa分子進行作用的機械力的幾種方法。 (V · 1 )熱對流產生的機械力 在介質内建立一個溫度梯度,根據上述方程,這樣一個 溫度梯度將導致介質的流動,從而在介質中形成一個速度 場。這種介質的流動部分是由於熱擴散使介質傾向於達到 熱平衡而產生的,另外,對於水溶液,溶液的溫度分佈傾 向於與相應的密度分佈相一致,這樣一種密度的分佈同樣 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱" -------^ 593683 A7 B7 五、發明説明( ) 85 可導致介質的流動而達到平衡。溫度梯度引起的介質流動 有時也稱為熱對流。熱對流可以發生在規模相對較大的整 個介質中,它可用來促進液體的混合,也可以作為一種力 把分子從較遠的地方帶到某一特定反應位置。 在本發明中,透過在多力操作晶片結構中安裝加熱和/ 或冷卻元件也可以在以多力操作晶片為基礎的反應器或儀 器中建立溫度梯度分佈。這種加熱元件可以是簡單的焦耳 加熱電阻器,這種焦耳加熱電阻器可以被加工到多力操作 晶片中,代替如那些限定長度、安裝到特定位置的薄導電 膜。同樣,加熱電阻器也可以替代那些(具有確定長度、 安裝在特定位置的)纏繞絕緣體的微型電線。這些加熱器 必須有特殊的阻抗,以一個阻抗為1 0歐姆的加熱器為 例,通以0.2A的電流將產生0.4W焦耳熱能,如果這個線 圈是安裝在一個小於5 0 0平方微米的區域,那它將有效的 升高局部溫度並在介質中產生溫度梯度。同樣,冷卻元件 可以是一個通以電流後可引起周圍溫度下降的半導體帕爾 帖(Peltier)元件。 在一個具體的實例中,多力操作晶片可以帶有一個可選 通的加熱元件的陣列,這些元件必須按照一定的順序放置 或進行結構設計以、便使得當其中每一個、一些或全部元件 被啟動時能建立起溫度梯度從而產生理想的熱對流,並因 此在引入由多力操作晶片構成的儀器的介質中建立起速度 場。例如,當一個加熱元件被啟動或通電時,在這一元件 周圍相鄰介質的溫度升高將產生一個局部溫度梯度,產生 _-88-_ 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Rp ------ coefficient, P is the Reynolds constant of the particle, which is defined by the following formula ^ where A is the density of the medium, and the first term on the right side of the above equation is a summary of the S t o k e s resistance acting on the particle. As is known to all, the Stokes force applied to spherical particles can be calculated by the following formula: heart --- ~ = 3milk heart-\) ~, St () kes force is the force added to the particles due to the relative velocity between the media. Because ___- 86- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 84593683 A7 B7 Five invention description (this, when a particle (or various other types of Moiety) is placed in the velocity field, A mechanism (Stokes resistance) will be applied to the particles to move them at the same speed as the speed of the medium in which they are located. Such a mechanical force can affect the position, velocity, and other dynamic behavior of the particles, and can be used The velocity field of the medium refers to the velocity distribution of the moving medium. The velocity of the medium can be given by the following equation: (dum ^ \ Γ η Ρ〇 [^ Γ + = + Pof +-P〇g βτ (Τ -T0) + ^ Cncn L n Eight is the density of the medium at temperature r, t is the speed of the medium, p is the pressure inside the medium, 7 is the weight on the medium, f is the acceleration vector of gravity, and the outside is the temperature The volume expansion coefficient related to the change, I is the volume expansion coefficient related to the type of medium. In the above parameters, except for and-, all are functions related to their position in the medium. According to the above equation, several different methods can be used. To change the velocity field of the medium. (1) change the pressure in the medium, (2) apply volumetric force to the medium, (3) change the temperature or temperature gradient of the medium, and (4) change the concentration of various media. Here we analyze several Several methods that can generate a velocity field and thus a mechanical force acting on real fa molecules in the medium. (V · 1) The mechanical force generated by thermal convection establishes a temperature gradient in the medium. According to the above equation, such a The temperature gradient will cause the medium to flow, thus forming a velocity field in the medium. The flow of this medium is partly caused by thermal diffusion that tends to reach the thermal equilibrium of the medium. In addition, for aqueous solutions, the temperature distribution of the solution tends to correspond to the corresponding The density distribution is consistent, and such a density distribution is also the same as the paper size. The Chinese national standard (CNS) A4 specification (210 X 297 public love " ------- ^ 593683 A7 B7) V. Description of the invention () 85 It can cause the flow of the medium to reach equilibrium. The flow of the medium caused by the temperature gradient is sometimes called thermal convection. Thermal convection can occur on a relatively large scale. In the medium, it can be used to promote the mixing of liquids, and it can also be used as a force to bring molecules from a remote place to a specific reaction position. In the present invention, by installing heating and / or cooling in a multi-force operation wafer structure The element can also build a temperature gradient profile in a multi-force manipulation wafer-based reactor or instrument. This heating element can be a simple Joule heating resistor that can be processed into a multi-force manipulation wafer Instead of thin conductive films such as those with a limited length and installed in a specific location. Similarly, heating resistors can also replace those miniature wires (with a certain length and installed in a specific location) wound with insulators. These heaters must have a special impedance. Taking a heater with an impedance of 10 ohms as an example, a current of 0.2A will produce 0.4W joules of thermal energy. If this coil is installed in an area less than 500 square microns Then it will effectively raise the local temperature and generate a temperature gradient in the medium. Similarly, the cooling element may be a semiconductor Peltier element that can cause a drop in ambient temperature when an electric current is applied. In a specific example, the multi-force operation wafer can be provided with an array of optional heating elements. These elements must be placed in a certain order or structurally designed so that when each, some or all of the elements are A temperature gradient can be established at startup to produce ideal thermal convection, and thus a velocity field can be established in a medium introduced into an instrument composed of a multi-force operating wafer. For example, when a heating element is activated or energized, the temperature rise of the adjacent medium around this element will generate a local temperature gradient, resulting in _-88-_ This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm)
熱對流。在另—丨 個只例中,多力操作晶片可以包括多個、 相互連接的加教軍开 關々门祥…、早兀以便使這些單元能夠被同步的開 二 個實例中’多力操作晶片可以只包含-個 ’當通以電流時它可升高局部溫度,在介質中產 .、,、士机。同樣,多力操作晶片也可以包含一個可逐個選 通的冷卻元件的陣列,或單個冷卻元件。 (V.2.)由於介質壓力變化而引起的機械力 在介質中可產生壓力梯度。按照規定介質中速度的方程 ’,’介質中壓力梯度或壓力的變化將導致介質的流動,產 生速度場。處於速度場中的實體分子f體分子將受到物理 力或機械力的作用。 义力操作晶片5α製作成各種結構以便能得到各種理想 的壓力梯度或壓力的變化。—個例子是,纟多力操作晶片 内置個微型泵,當泵工作時就能在介質中產生壓力梯 度。故種壓力梯度就可導致介質的流動(例如在一種儀器 中J貝被傳送某一距離),處於介質中的實體分子就會受 到機械力並被這種力所操作。另一個例子可以是整合在多 力操作晶片上的微加工成的閥門/毛細管的陣列,這些閥 門/毛細管可透過外設的物理裝置進行移動或控制。例 如’這些毛細管或閥門用功能性的材料如:溫度敏感材 料、表面儲存合金等覆蓋,而且它們還可進一步與外設的 4號源相連或與外在的物理力相偶聯,他們能夠引起毛細 官或閥門的運動。當介質中的這些閥門或毛細管中的一個 或多個移動時,就可產生壓力的變化或形成壓力梯度。這 本紙張尺度適财s S家標準(CNS) Α4規格( X 297 公釐) -- 593683 A7 ______ _______B7 五、發明説明( ) 87 種壓力梯度可導致於這些閥門或毛細管附近的介質產生運 動’由於务質中速度場的產生使處於介質中的實體分子受 到機械力的作用。 在本發明中,各種各樣的内部結構都可以採用。例如, 可以把一個電子管(或微電子管)或泵(或微型泵)與主動式 晶片的反應室相連’它們將產生一種或多種物理場並對實 體分子施加一種或多種物理力。這些電子管或泵可以被操 作從而在反應室介質中產生壓力梯度或壓力變化並引起介 質的流動。因此,儀器的這些内部結構(包括這些結構元 件及反應室)可用來產生速度場並作用於實體分子的機械 力。 (V · 3 ·)由於體積力作用於介質而產生的機械力 介*中的速度場可以由介質中施加的體積力產生。例如 夕力操作晶片的基片表面被加工成具有特殊的表面電荷或 表面電荷分佈。這種基片可以與其他結構(如:蓋片、塾 圈、間隔裝置)一起形成一個帶有各種各樣的輸出輸入埠 的泥體池。當液體介質被輸入到這種流體池中後,外部的 電h號源可以在的某一方向上施加一個電信號,這種電壓 產生的電場可以與基片(和/或流體池的其他表面的電荷)表 面電荷交互作用在介質中產生一個流體運動。流體池内產 生的這種速度分佈就是一個速度場。這種速度場就可用來 產生對實體分子進行操作的力。 本發明中的多力操作晶片、儀器可以包括其他能產生速 度場並對實體分子施加機械力的内部結構。 &張尺度適财§时料公釐p 593683 :91- 發明説明( (V.I)實體分子操作實體分子的其他物理力 在本發明中多力操作的晶片或以這種晶片為基礎的設 備、儀器也可以應用上面沒有提到的各種物理力。本專利 2發明者設想在多力操作晶片結構中應用各式各樣的物理 這些力能夠進行外部控制和採用外部能量源並能 對見體分子進行操作。 E ·晶片和儀器的實例Thermal convection. In another example, the multi-force operation chip may include a plurality of interconnected Canadian military switches 々 门 祥 ..., so as to enable these units to be opened simultaneously in two instances of 'multi-force operation' The chip may contain only one 'when the current is applied, it can raise the local temperature, and produce in the medium. Similarly, a multi-force operation wafer may contain an array of individually selectable cooling elements, or a single cooling element. (V.2.) Mechanical forces due to changes in medium pressure can produce pressure gradients in the medium. According to the equation of the velocity in the medium, ', the pressure gradient or pressure change in the medium will cause the medium to flow and generate a velocity field. The physical molecules f-body molecules in the velocity field will be affected by physical or mechanical forces. The force manipulation wafer 5? Is made into various structures so that various ideal pressure gradients or pressure changes can be obtained. For example, the multi-power operation chip has a built-in micro pump, which can generate a pressure gradient in the medium when the pump is operating. Therefore, this kind of pressure gradient can cause the flow of the medium (for example, J shell is transported a certain distance in an instrument), and the solid molecules in the medium will receive mechanical force and be operated by this force. Another example might be an array of micromachined valves / capillaries integrated on a multi-force operation wafer. These valves / capillaries can be moved or controlled by physical devices on the periphery. For example, 'these capillaries or valves are covered with functional materials such as temperature-sensitive materials, surface storage alloys, etc., and they can be further connected to the external source 4 or coupled with external physical forces, they can cause Capillary officer or valve movement. When one or more of these valves or capillaries in the medium move, a pressure change or pressure gradient can occur. This paper is suitable for financial standards (CNS) A4 size (X 297 mm)-593683 A7 ______ _______ B7 V. Description of the invention () 87 pressure gradients can cause movement of the medium near these valves or capillaries' Due to the generation of the velocity field in the matter, the solid molecules in the medium are subjected to mechanical forces. In the present invention, various internal structures can be adopted. For example, an electron tube (or microelectron tube) or pump (or micropump) can be connected to the reaction chamber of an active wafer ', which will generate one or more physical fields and apply one or more physical forces to the physical molecules. These tubes or pumps can be operated to produce a pressure gradient or pressure change in the reaction chamber medium and cause the medium to flow. Therefore, these internal structures of the instrument (including these structural elements and reaction chambers) can be used to generate velocity fields and act on mechanical forces of solid molecules. (V · 3 ·) Mechanical force due to volume force acting on the medium The velocity field in the medium * can be generated by the volume force applied in the medium. For example, the surface of a substrate of a Xi Li operation wafer is processed to have a special surface charge or surface charge distribution. This substrate can be used with other structures (such as coverslips, rings, spacers) to form a mud pool with various input and output ports. When a liquid medium is input into such a fluid pool, an external electric h source can apply an electrical signal in a certain direction, and the electric field generated by this voltage can be related to the substrate (and / or other surfaces of the fluid pool). (Charge) The interaction of surface charges creates a fluid motion in the medium. The velocity distribution generated in the fluid pool is a velocity field. This velocity field can then be used to generate forces that operate on solid molecules. The multi-force operation wafer and instrument in the present invention may include other internal structures capable of generating a velocity field and applying a mechanical force to a solid molecule. & Zhang Jiu Shi Shi Cai § Seasonal Material Millimeter p 593683: 91- Description of the invention ((VI) Physical molecules manipulate other physical forces of physical molecules In the present invention, a wafer or a device based on such a wafer, The instrument can also apply various physical forces not mentioned above. The inventor of this patent 2 envisages applying a variety of physics in a multi-force operation wafer structure. These forces can be used for external control and use of external energy sources, and can be used to see molecules in the body. E. Examples of wafers and instruments
^明中的儀器或晶片(如:多力操作晶片,MFC)可以 類產生力的元件或結構,如產生直流電場力的電極 場力的電磁元件。兩種力的聯合形式包括,但不 限於,聲場力加電場力(電場力可以是直流杂 I 的介電電泳力和行波介電電泳力% θ S吊士 場力加光場力;聲場力加機械 :°磁%力’聲 力加機械力;電場力加光場力· 两力包野 加先%力;光場輻射力加機械力。 ,力 力、磁場力、聲場力、機械力、 钱力如·笔場 野力,私合力的總數是 2”種。如果我們把電場力分成三種類 “ 場力、常規介電電泳力、行波介泰兩 土 直/瓜电 中類型的力:聲場力、磁場皮二::力力’:會有以下七 力、行波介電電泳力、機械力 1、、吊規介電電泳 先%力,這些力的組合形 式有 2*1 種。 本發明中的儀器或晶片(如:多 包括三類產生力的元件或結構,如產與片,紙)可以 筆子射力的壓電 本纸張尺度適用標準(CI^.A4規 裝 訂 89593683 五 、發明説明( 疋件或結構,產生行波介電電泳 力的電磁元件。三種力的聯合 件,產生磁項 力/常規介電電泳力/磁場力;:二括,但不限於’聲場 力;聲場力/行波介電電泳力/機械:力/直流電場力/磁場 泳力/光場力;聲場力/機械力/磁場力^力/常規介電電 場力;聲場力/直流電場力/光尸 ,尸耳场力/機械力/磁 機械力,·及立它组人。對入. 聲場力/直流電場力/ 夂八匕、、且口。對全邵五種兩 力、聲場力' 機械力、光場Λ 力、磁場 c5^1!113=10 尤野力,聯合力的總數是 …3 ”1種。如果我們把電場力分成三種類型,如亩、云 二:力、常規介電電泳力、行波介:; 七種類型的力··聲場力、磁場 广有以下 力、行波介電電泳力、機械力、光=力電電泳 广3— 7*6*5 ^ 尤野力,这些力的組合形 式有 e7=F^r-5·種。 :發明中的儀器或晶片(如:多力操作晶片 包:四類產生力的元件或結構,如產生綱射力… 構’產生行波介電電泳力的電極元件, =電磁元件,產生機械力的加熱元件。四; 式包括:聲場力/行波介電電泳力/磁場力/光場力,以2 他各種可能的组合,對五種力如··電場力、^場力、聲場 力、機械力、光場力,聯合力的總數是g 種 ::我們把電場力分成三種類型,如直流電場力、常規: 電電泳力、行波介電電泳力,則會有以下七種類型的力^ 聲場力、磁場力、電場力、常規介電電泳力、行波介電電 本紙張尺度適用T國國冢標準(CNS) A4規格(冗_Χ297公爱 -92- 五、發明説明( ) 90 7 •種 械力、光嗶力,這些力的組合形式有 7 Τ*?Ϊ2^7 = 35 2明中的儀器或晶片(如:多力操作晶片,mfc)也可 賴於夕於四β的產生力的711件或結構,組合力的數目依 Li!用,!力的數目N及在儀器或晶片中用的力的數目 N , 件情況下’不同類型的力可能由同-種產生力的元 元;:社來發生’產生/引起。因此’產生不同種類的力的 或結構可以是-個整體,例如,同-個電極元件或結 :::被激發產生直流電場力和常規介電電泳力來作用於 被操作的分子和微粒。 構明中’除非另有特定的說明,產生力的元件或結 構儀器的内部結構,或者說在本發明中它們始終是 的内置的或構建於作為晶片和儀器-部分的基片上 2了產生不同類型的力可按照所需的順序和條件用 :夕邵信號源料用料些產生力的元件或結構。例如, 個包括聲場力、常規介電電泳力和磁場力元件或結 '多力操作晶片來說’所產生的力的順序可以是··首先 作戶學元件或結構,維持一個特定長度的時間以便能操 乍所有的粒子’其次啟動磁性元件或結構並料—定 ::作磁性粒子’最後啟動介電元件或結 : 疋介電特性的粒子。 令特 本紙張尺度適用而家標規格(2胸97公ϋ -93- 593683 A7 B7 五、發明説明(91 ) 由於有許多不同類型的多種力操作晶片或基於多力操作 晶片的裝置、儀器、系統的具體實例,下面我們描述一些 多力操作晶片的具體實例。這些描述可能會自然的延伸到 本發明中基於多力操作晶片的裝置或儀器。 (A)多力操作晶片包含多個結構單元 一個多力操作晶片包含多個結構單元,它們形成一個單 元陣列。每一個單元包含各種能產生不同類型的物理力的 結構元件。舉一個例子,一個微電磁元件或結構,一個微 電極結構或元件、一個微電磁元件或結構和一個壓電元件 或結構可整合形成一個基本單元。其中,微電磁元件或結 構可被啟動產生所需的磁場,微電極元件通電後可產生一 個合適的非均勻電場,壓電元件或結構通電後可產生一個 聲場。在另一個例子中,一個微電磁元件或結構,一個微 電極元件或結構,一個壓電元件或結構和一個加熱元件可 整合形成一個基本單元。 當一個多力操作晶片包含多個單元且這些單元形成單元 陣列時,每一個單元之間可以基本上相同。這些單元可以 有序地或無序地整合在一個晶片上。這些單元可以逐個選 通以便使每個不同單元中的每種類型的元件可選擇性的被 確認位置,從而使得在任何時刻都可以選擇性的找到任何 單元中的任何產力元件,同樣也可以在任何給定的單元中 同時選擇性地確定所有類型產力元件。另外,這些元件中 的一部分或全部也可以連在一起以便使得這些單元中的某 些產力元件可以被同時啟動或供能。 _-94-_ 本纸張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)The instrument or chip in the Ming (such as a multi-force operation chip, MFC) can be similar to a force-generating element or structure, such as an electromagnetic element that generates a DC electric field force and an electrode field force. The combined form of the two forces includes, but is not limited to, a sound field force plus an electric field force (the electric field force may be a DC electrophoretic force of a DC hybrid I and a traveling wave dielectric electrophoretic force% θ S hanging field force plus a light field force; Sound field force plus mechanical: ° Magnetic% force 'Sound force plus mechanical force; Electric field force plus light field force · Two force envelopes plus first% force; Light field radiation force plus mechanical force. Force force, magnetic field force, sound field Force, mechanical force, Qian Liru, pen field force, the total number of private forces is 2 ". If we divide the electric field force into three types," field force, conventional dielectrophoretic force, traveling wave Jitai two soil straight / Guadian Medium type of force: sound field force, magnetic field skin 2 :: Force force ': There will be the following seven forces, traveling wave dielectrophoresis force, mechanical force 1, and hanging gauge dielectrophoresis first% force, a combination of these forces There are 2 * 1 types. The instrument or chip in the present invention (for example, includes three types of force-generating components or structures, such as production and film, paper). ^ .A4 binding 89895683 5. Description of the invention (Part or structure, electromagnetic component that generates traveling wave dielectrophoretic force Combination of three forces, generating magnetic term force / conventional dielectrophoretic force / magnetic field force ;: two, but not limited to 'sound field force; sound field force / traveling wave dielectrophoretic force / mechanical: force / DC electric field force / Magnetic field force / light field force; sound field force / mechanical force / magnetic field force ^ force / conventional dielectric electric field force; sound field force / DC electric field force / optical field force, mechanical field force / magneto-mechanical force, · He Lita group. Opposite. Sound field force / DC electric field force / 夂 八 刀, and 口. For the five types of two forces, sound field force 'mechanical force, light field Λ force, magnetic field c5 ^ 1! 113 = 10 You Yeli, the total number of joint forces is ... 3 "1. If we divide the electric field force into three types, such as mu, cloud two: force, conventional dielectric electrophoretic force, and traveling wave medium: seven types of Force ·· Sound field force and magnetic field have the following forces, traveling wave dielectric electrophoresis force, mechanical force, light = force electrophoresis, 3-7 * 6 * 5 ^ You Yeli, the combination of these forces is e7 = F ^ r-5 · kinds: instruments or wafers in the invention (such as: multi-force operation wafer package: four types of force-generating elements or structures, such as generating dimensional forces ... Electrode element, = electromagnetic element, heating element that generates mechanical force. Four; The formula includes: sound field force / traveling wave electrophoretic force / magnetic field force / light field force, in various possible combinations, for five kinds of forces such as ·· Electric field force, ^ field force, acoustic field force, mechanical force, light field force, the total number of joint forces is g :: We divide the electric field force into three types, such as DC electric field force, conventional: electrophoretic force, traveling wave Dielectric electrophoretic force, there will be the following seven types of force ^ Sound field force, magnetic field force, electric field force, conventional dielectric electrophoretic force, traveling wave dielectric This paper standard is applicable to the national standard T4 (CNS) A4 (redundant) _Χ297 公 爱 -92- V. Description of the invention () 90 7 • Mechanical force, light beep force, the combination of these forces is 7 Τ *? Ϊ 2 ^ 7 = 35 2 the instrument or chip in the Ming Dynasty (such as: Force operation of the wafer, mfc) can also depend on the 711 pieces or structures that generate forces at four betas. The number of combined forces depends on Li !, the number of! N and the number of forces N used in the instrument or chip. In this case, 'different types of forces may be generated / caused by the same kind of generating force; Therefore, the structure or structure that generates different kinds of forces can be a whole, for example, the same electrode element or junction ::: is excited to generate a DC electric field force and a conventional dielectrophoretic force to act on the manipulated molecules and particles. In the design, unless otherwise specified, the internal structure of the force-generating element or structure of the instrument, or in the present invention they are always built-in or built on a substrate that is a wafer and an instrument-part. The type of force can be used in the required order and conditions: Xishao signal source material uses some force-generating components or structures. For example, the order of the forces generated by a sound field force, a conventional dielectrophoretic force, and a magnetic field force element or a junction 'for a multi-force operation chip' may be: first, a household element or structure is maintained to maintain a specific length Time so that all the particles can be manipulated 'Second, the magnetic element or structure is activated—determining :: as magnetic particles', and finally the dielectric element or junction is activated: 疋 The dielectric characteristics of the particles. Make the special paper size applicable and the house standard specifications (2 breasts 97 cm -93- 593683 A7 B7 V. Description of the invention (91) Because there are many different types of multi-force operation wafers or devices, instruments based on multi-force operation wafers, Specific examples of the system, we describe some specific examples of multi-force operation wafers below. These descriptions may naturally extend to the device or instrument based on multi-force operation wafers in the present invention. (A) Multi-force operation wafers include multiple structural units A multi-force operation wafer contains multiple structural units that form an array of cells. Each unit contains various structural elements that can generate different types of physical forces. For example, a microelectromagnetic element or structure, a microelectrode structure or element A micro-electromagnetic element or structure and a piezoelectric element or structure can be integrated to form a basic unit. The micro-electromagnetic element or structure can be activated to generate the required magnetic field, and the micro-electrode element can generate a suitable non-uniform electric field after being energized. , A piezoelectric element or structure can generate a sound field when energized. In another example, a micro An electromagnetic element or structure, a microelectrode element or structure, a piezoelectric element or structure, and a heating element can be integrated to form a basic unit. When a multi-force operation wafer contains multiple units and these units form a cell array, each unit It can be basically the same between them. These units can be integrated on a chip in an orderly or disorderly manner. These units can be gated one by one so that each type of component in each different unit can be selectively identified, Therefore, any productive element in any unit can be selectively found at any time, and all types of productive elements can also be selectively determined in any given unit at the same time. In addition, some or all of these elements It can also be connected together so that some of the productive elements in these units can be activated or powered at the same time. _-94-_ This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
依據不同的應用,多力操作曰 抑一 夕刀休邗日日片的一個整體陣列的不同 =可把不同’因此不同的單元將產生不同的物理推動 口。?例來說:第一個次陣列可以包含電磁單元以產生磁 場’第二個次陣列可以包含微電極單元和聲動力單元。本 發明的目的是開發多種物理作用力以用於分子和顆粒的操 作、控制和處理。因此,多力操作晶片可包含任何數目的 早::每-個單元又可以包含任何數目的產力元件。不同 勺單元可〃透過他們的結構元件來區分或者含有不同結構 元件。 ’ 士這樣的多力操作晶片來說,不同的單元可採用特定的 機制而連接起來。有一種可能如下:不、同的單元可透過能 夠讓液豆在其中轉運的液流通道而連接。這些單元也可以 透過把讓微顆粒、分子顆粒複合物在其中進行傳輸的通路 而連接。舉例來說:行波介電電泳電極可被用來配合或連 接不同的單元。 (β)多力操作晶片包含所有產生物理力的結構。 另個夕力操作晶片裝置可包含所有產生不同物理力的 〜構舉例來說,多力操作晶片可包含一個用以產生行波 黾黾/永力的的陣列,一個微電磁單元陣列可用以產生磁 %力;一個壓電單元用以產生聲波。全結構和單一單元_ 結構-陣列的區別在於:當給全結構以能量時,相應的物 理力將在基於多力操作晶片的流體池或基於多力操作晶片 的儀器的所在位置產生,而單元-結構-陣列方式允許啟動 内部的單元,相應的物理力僅只在流體池或儀器的相應區According to different applications, the multi-force operation is different from the overall array of daily films. It can be different, so different units will have different physical thrusts. ? For example, the first sub-array may include an electromagnetic unit to generate a magnetic field. The second sub-array may include a microelectrode unit and an acoustic power unit. The object of the present invention is to develop a variety of physical forces for the manipulation, control and processing of molecules and particles. Therefore, a multi-force operation wafer can contain any number of early: each unit can contain any number of productivity elements. Different spoon units can be distinguished by their structural elements or contain different structural elements. For a multi-force operation chip like a driver, different units can be connected using a specific mechanism. One possibility is as follows: different units can be connected through a liquid flow channel that allows liquid beans to be transported in it. These units can also be connected by a path through which microparticle and molecular particle complexes are transmitted. For example, a traveling-wave dielectric electrophoresis electrode can be used to fit or connect different cells. (β) The multi-force operation wafer includes all structures that generate physical forces. Another force-manipulating wafer device may contain all the different physical forces. For example, a multi-force manipulating wafer may include an array to generate traveling wave chirp / permanent force, and an array of micro-electromagnetic units may be used to Magnetic% force; a piezoelectric unit is used to generate sound waves. The difference between a full structure and a single unit_ structure-array is that when the full structure is energized, the corresponding physical force will be generated at the location of the fluid pool based on the multi-force operation wafer or the instrument based on the multi-force operation wafer, and the unit -Structure-Array method allows the internal unit to be activated, and the corresponding physical force is only in the corresponding area of the fluid pool or instrument
裝 訂Binding
線, 593683Line, 593683
域產生。 (c)夕力操作晶片包含產生特定類型物理推動力的全結 夕構和結構單元陣列用以產生其他類型的力〇 多力操作晶片的另_個裝置包含產生特定類型物理推動 力j王、。構和結構單元陣列用以產生其他類型的力。舉例 來況夕力操作晶片可包含一個全電極結構,在施加電訊 號的作用日寺’匕將在基於多力操作晶片的槽或儀器内的任 何位置產生非均勻的電場。與次此同時多力操作晶片還可 以包含一個獨三的位置確定的微電磁單元陣列。它可以僅 在已輸入能量/啟動的單元的臨近區域產生磁場。 對万;一個包含結構元件單元的陣列,不同的單元可透過 1疋的機制相連接。在一種情況下,不同的單元可透過流 體f运相連接,使得液體可在這些單元内部轉運。對這樣 的夕力操作晶片來說,不同的單元可採用特定的機制而連 接起來。有一種可能如下:不同的單元可透過能夠讓液體 f其中轉運的流體通道而連接。這些單元也可以透過能讓 微顆粒、分子顆粒複合物在其中進行傳輸的通路而連接。 舉例來說:行波介電電泳電極可被用來配合或連接不同的 XTtT 一 早兀。 夕力操作晶片結構的變化可進一步在不同的單元内包含 生物予/生物化學元件。在此,生物學/生物化學元件可包 括固足在多力操作晶片表面的多種分子,例如:蛋白質分 子核酸、抗體或者多種生物顆粒,如:細胞、細菌或病 毒等。這些生物學/生物化學元件可均一的覆蓋在多力操 丨X 297公釐) 593683 五、發明説明(94 作晶片表面或選擇性的塗覆在多力操作晶片表面。 F ·實施例 下面的例子說明多力操作晶片的結構及它是如何被用於 實體分子操作和進行生物學,生物化學和化學處理的。例 如··從混合物中分離目標細胞和分子,運送目標細胞和分 子,分析目標細胞和分子,檢測分析結果,等等。·圖丨展 示了一個可以產生四種物理場,並因此可以 力的示意圖。該儀器包括一個基底10。,和四:= 1 〇 0上微加工的結構,第一種結構包含微電極單元1 1 5, 它可以透過外部施加的電信號(圖丨中沒有示出)而產生電 場EU20)。引入或置入的電場的1S6實體分子將經 受電場力128(例如··直流電場力,常規介電電泳力或行 波介電電泳力)。第二種結構包括壓電單元135 ,它可以 產生機械振動,這種震動可以整合如與基底直接或給直接 接觸的介質中,並最終在介質中導致聲波場a(i4〇)。置 ^或引入場140的146實體分子將經受聲場力148。第 三種結構包含-個電磁單元155,它能產生磁場 M(160)。166部分具有特定的磁學性質,當將它放人磁 場160時,它將經歷磁場力168。第四種結構包含一個加 熱元件175,它可以在與加熱元件175直接或非直接接觸 的介負上產生溫度梯度,從而導致速度場丨8 q。當將不見 186置於速度場18〇時,它將承受機械力ι88。 圖1中的四種結構是在基底100上製作的。在一種替代 的方式中,這四種結構可採用不同的形式,並可以被附到 -------97- 本紙張尺度適用中國國家標準(CNS) A4規格(210X2^97公爱)一~ 593683 五、發明説明( A7Domain generation. (c) The force-operating chip includes a full structure and an array of structural elements that generate a specific type of physical driving force to generate other types of force. Another device for the multi-force operating chip includes generating a specific type of physical driving force. . Configurations and arrays of structural elements are used to generate other types of forces. For example, the Xili operation wafer may include a full-electrode structure, and when a signal is applied, the Risi ’dagger will generate a non-uniform electric field at any position in the groove or instrument based on the multi-force operation wafer. At the same time, the multi-manipulation wafer can also contain a unique array of micro-electromagnetic units with a certain position. It can generate a magnetic field only in the immediate area of the unit where energy has been input / activated. For ten thousand; an array containing structural element units, different units can be connected through a 1 疋 mechanism. In one case, the different units can be connected through the fluid f, so that liquid can be transported inside these units. For such a power-operated wafer, different units can be connected using a specific mechanism. One possibility is as follows: Different units can be connected through a fluid channel that allows liquid f to be transported therein. These units can also be connected through pathways that allow microparticle and molecular particle complexes to be transported in them. For example: Traveling-wave dielectric electrophoresis electrodes can be used to match or connect different XTtTs. Variations in the structure of Xi Li's operating wafers can further include biological / biochemical elements in different units. Here, the biological / biochemical element can include a variety of molecules fixed on the surface of the multi-manipulator wafer, such as protein molecular nucleic acids, antibodies, or various biological particles, such as cells, bacteria, or viruses. These biological / biochemical elements can be uniformly covered on the multi-force operation X 297 mm) 593683 V. Description of the invention (94 as a wafer surface or selectively coated on the surface of the multi-force operation wafer. F · Examples below Examples illustrate the structure of a multi-force manipulation wafer and how it can be used for physical molecular manipulations and for biological, biochemical, and chemical processing. For example, · separating target cells and molecules from a mixture, transporting target cells and molecules, and analyzing targets Cells and molecules, detection and analysis results, etc. Figure 丨 shows a schematic diagram that can generate four physical fields and therefore force. The instrument includes a substrate 10., and four: = 100 micro-machined Structure, the first structure includes a micro-electrode unit 1 1 5, which can generate an electric field EU20 through an externally applied electrical signal (not shown in Figure 丨). The 1S6 entity molecules of the introduced or inserted electric field will be subjected to an electric field force of 128 (for example, a DC electric field force, a conventional dielectrophoretic force, or a traveling wave dielectrophoretic force). The second structure includes a piezoelectric unit 135, which can generate mechanical vibrations. Such vibrations can be integrated into a medium that is in direct or direct contact with the substrate, and eventually cause an acoustic wave field a (i4〇) in the medium. 146 solid molecules placed or introduced into field 140 will experience a sound field force of 148. The third structure contains an electromagnetic unit 155, which can generate a magnetic field M (160). Part 166 has specific magnetic properties. When it is put into the magnetic field 160, it will experience a magnetic field force 168. The fourth structure includes a heating element 175, which can generate a temperature gradient on the dielectric that is in direct or indirect contact with the heating element 175, resulting in a velocity field of 8q. When invisible 186 is placed in the velocity field 18o, it will withstand mechanical force 88. The four structures in FIG. 1 are fabricated on a substrate 100. In an alternative way, these four structures can take different forms and can be attached to ------- 97- This paper size applies the Chinese National Standard (CNS) A4 specification (210X2 ^ 97 public love) I ~ 593683 V. Description of the invention (A7
或結合到基底 圖1 π出的疋二個可以產生四種作用力的多力晶 子0圖2描敘的是一個包本猶上口。 日9 勺秽' 口獨又早元2 1 〇陣列的多力曰μ 200。每個21〇單元都是由 "夕力日曰片 括個電學元件/結構220用以^產;^件組成1 件/結構26〇用以產生磁場,—個2心,—個磁學六 女 士 固耳予疋件/結構2 4 0用>、 產生聲場。每-個210單元還可以進一步 : 270生物學元件可以附著或固 ^ 1子^ 物分子,生物學單元可被用於在3 Z 的分子或4 、在日日片表面進行特定峰物库 =化學y舉例來說:如要㈣㈣ : 那麼生物學元件可以是固定在晶片表面的單裔 刀子。當在晶片的表面操作目的dna分子時,使拜 二:咖件所產生的各種作用力。在電場力作用,每 =作用或聲力作用時’如果目的分子與探針分子互補, =它們可在合適的條件下雜交或結合。雜交反應可以用 合適的方法來檢測。 口在圖2中晶片中的所有單元都是相同的,雖然,這並不 :必需的。在其他的例子中,多力晶片上的不同單元可以 =同的結構元件组成…個單元可以―個磁學元件/ :構組合一個聲學元件;另一個單元可以包含一個電學元 :。圖2中所示出的四個單元是處在不同的位置上的,雖 廷,不是必需的。在其他的例子中,$同的結構元件 以重登或佔據晶片上的相同位置。舉例來說,電學元件 可以與聲學元件處在同一位置。 -98- 297公釐)Or it can be combined with the base. Fig. 1 shows the two two multi-force crystals that can generate four kinds of forces. Fig. 2 depicts a package that is still catchy. On the 9th spoon of filth, the mouth of Duoyou and Yuanyuan 2 10 array of Duoli said μ 200. Each 21 ° unit is composed of an electrical component / structure 220, which is used to produce ^ pieces; 1 piece / structure 26 ° to generate a magnetic field, 2 cores, and 1 magnetism. Ms. Liu's Guer Prefabrication / Structure 2 4 0 >, Generate sound field. Each 210 units can be further: 270 biological elements can be attached or fixed ^ 1 child ^ molecular molecules, biological units can be used for 3 Z molecules or 4, the specific peak library on the surface of the Japanese film = Chemistry y for example: if you want to ㈣㈣: then the biological element can be a single-bladed knife fixed on the surface of the wafer. When the target DNA molecule is operated on the surface of the wafer, it can make all kinds of forces generated by the second part. Under the action of electric field force, each = when acting or acoustically acting ', if the target molecule and the probe molecule are complementary, they can hybridize or bind under appropriate conditions. The hybridization reaction can be detected by a suitable method. All the cells in the wafer in FIG. 2 are the same, although, this is not necessary. In other examples, different units on a multi-force chip can be composed of the same structural elements ... Each unit can be a magnetic element /: an acoustic element; another unit can include an electrical element :. The four units shown in Figure 2 are in different locations, although they are not necessary. In other examples, the same structural elements are re-registered or occupy the same location on the wafer. For example, the electrical component can be co-located with the acoustic component. -98- 297 mm)
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缘· 593683 A7 B7 五、發明説明( 圖3 A,3 B,3 C展示的是本發明的兩作用力晶片的三 個不同部分,能夠產生聲場力和常規介電電泳力。在圖 3 A中,基底3 0 0是用壓電材料(例如壓電陶瓷p z T)。任 何類型的壓電材料均可以採用,只要在對它施加電信號 時,它能夠產生足夠的機械振動。可以使用很多商品化的 壓電圓片和基底。應採用合適厚度的壓電基底以產生所要 求的頻率的聲波場。壓電材料的例子可在很多文獻中找 到。包括 Yasuda K. et al, J. Acoust. Soc. Am. Vol. 102 (1), p642-645? July, 1997; Yasuda K. and Kamakura T. Appl. Phys. Lett,Vol. 71(13),pl771-1773,Sep. 1997; Pui et al,Biotechnol. Prog., 11:146-152 (1995); Yasuda et al5 J. Acoust. Soc. Am., 99(4):1965-1970 (1996); and Yasuda et al·,Jpn. J. Appl. Phys·, 35(1):3295-3299 (1996)。圖 3 A 中所、示的是,基底 3 00 的一 個主表面3 20導電層(例如··薄的金屬膜)所覆蓋,它可以 作為一個連接外部信號的電極而給壓電基底提供能量。圖 3A中在基底300的另一個主表面上製作了相互錯位式電 極陣列3 4 0。該電極陣列包含兩組線性電極元件,每一組 内的電極元件是連接在一起的。因此就有兩個電連接墊 3 42和346與這兩組電極相連。電極陣列340可以使用 一個簡單的光掩模版以微影技術在基底3 0 0上製作,或者 用其他的微光刻和微構造方法,就像我們所知的微光刻和 微構造方面的靈巧的方法(例如:See,for example, Rai-Choudhury P. (Editor), Handbook of Microlithography, Micromachining and Microfabrication, Volume 2: _____-99- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Yuan · 593683 A7 B7 V. Description of the invention (Figure 3 A, 3 B, 3 C shows three different parts of the two-force wafer of the present invention, which can generate sound field forces and conventional dielectrophoretic forces. In Figure 3 In A, the substrate 3 0 0 is made of a piezoelectric material (such as piezoelectric ceramic pz T). Any type of piezoelectric material can be used as long as it can generate sufficient mechanical vibration when an electrical signal is applied to it. It can be used Many commercially available piezoelectric wafers and substrates. Piezoelectric substrates of appropriate thickness should be used to generate the acoustic wave field at the required frequency. Examples of piezoelectric materials can be found in many literatures, including Yasuda K. et al, J. Acoust. Soc. Am. Vol. 102 (1), p642-645? July, 1997; Yasuda K. and Kamakura T. Appl. Phys. Lett, Vol. 71 (13), pl771-1773, Sep. 1997; Pui et al, Biotechnol. Prog., 11: 146-152 (1995); Yasuda et al5 J. Acoust. Soc. Am., 99 (4): 1965-1970 (1996); and Yasuda et al., Jpn. J Appl. Phys ·, 35 (1): 3295-3299 (1996). As shown in Fig. 3A, one main surface of the substrate 3 00 3 20 conductive layer (for example, thin gold Film), which can be used as an electrode connected to external signals to provide energy to the piezoelectric substrate. In FIG. 3A, an offset electrode array 3 4 0 is fabricated on the other main surface of the substrate 300. The electrode array contains two Group of linear electrode elements, the electrode elements in each group are connected together. Therefore, there are two electrical connection pads 3 42 and 346 connected to these two groups of electrodes. The electrode array 340 can use a simple photomask to micro Photolithography on substrate 300, or other microlithography and microstructuring methods, like the smart methods of microlithography and microstructuring as we know (eg See, for example, Rai-Choudhury P. (Editor), Handbook of Microlithography, Micromachining and Microfabrication, Volume 2: _____- 99- This paper size applies to China National Standard (CNS) A4 (210X297 mm)
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線· 593683 A7 B7 五、發明説明(97 )Line · 593683 A7 B7 V. Description of the invention (97)
Micromachining and microfabrication. SPIE Optical Engineering Press,Bellingham,Washington,USA (1997))。微構造方法可包 含許多基本步驟,舉例:光刻掩模版製作,金屬層製作, 介電層製作,光刻膠層製作,使用掩模版和顯影液來對光 刻膠層進行光刻,金屬層和介電層加工。電極可用金屬材 料:鋁、金、銀、錫、銅、鉑、鈀和碳,半導體材料有塗 鱗石夕(phosphorous-doped),以及其他任何具有高電導性的材 料。精通於微構造和顯微機械加工的人可以很容易的決定 採用什 樣的方法和材料以用於這種電極的製作。圖3 A 中所示的電極是相互錯位式電極,雖然,還有許多其他的 電極結構可供採用。舉例來說:電極可以是相互錯位式型 電極,螺旋電極,多項電極等。 在不同幾何形狀的電極的製作過程中,很多步驟是相同 的,差別在於使用不同形狀的掩模版,它們對應於所要求 的電極陣列。圖3A中的壓電基底300可透過基底300的 表面3 2 0和基底3 0 0上焊盤3 4 6的連接用外部信號源 3 60來供給能量。當從信號源3 60產生的合適波形(合適 波長的典型正弦信號)的AC信號施加到基底上時。基底 300就會產生機械振動,這種振動可整合入於基底300直 接或非直接相連的介質(圖3 A中沒有示出)中,並在介質 中產生一個聲場,介質中的實體分子將經歷來自聲場的聲 場力。對這樣一個二作用力晶片,只有在壓電基底的特定 區域才會產生振動。這些區域對應於與連接塊346相連的 電極。圖3 A中基底3 0 0上的電極陣列3 4 0,可透過焊盤 _-100-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 _____B7 五、發明説明( ) 和4 6用外部^號源3 8 0來提供能量而在與電極陣 列直接或非直接相連的介質中產生一個非均一的電場。信 號源3 8 0所提供的信號的頻率可小於1HZ或大於 1GHZ。介質中實體分子受電場力的作用(例如:常規介電 電泳力)。帶有電極陣列34〇的基底3〇〇表面可進一步塗 覆或覆盍一薄層的功能物質。在這種情況下,當向帶有基 底3 0 0的儀器中引入介質時,介質與基底時非直接接觸 的’這種非直接的接觸是透過功能物質層(和透過某些區 域的電極陣列340)來實現的。功能物質層可被用來在基 底的表面固定特定的生物分子。功能層的例子包括,但不 限於分子單層、膜、膠、多孔或非多孔的材料層。功能層 可以疋粘附於基底表面的額外層。另一種可能是,功能層 可透過在基底表面的直接的化學修飾來形成。理想的情況 疋’功能層與除了要固定的分子之外的其他分子之間應該 只有最小或者沒有非特異性結合,應保證目的分子的有效 的結合或附著。被整合到功能層用以將目的分子結合到基 底表面的特異分子被稱為功能基團。功能基團的例子包 括,但不限於,乙醛,炭化二亞胺,琥珀酰亞胺酯,抗 體’ 5:體和外源凝集素。功能基團同時還包括透過對晶片 表面的分子進行化學修飾二形成的化學基團和位元點。功 能基團可從下面選擇,可組成親水分子單層的基團,有功 能基團的親水分子單層,疏水分子單層,有功能基團的疏 水分子單層,親水膜,有功能基團的親水膜,親水膠,有 功能基團的親水膠,疏水膠,有功能基團的疏水膠,多孔 --------101-_____ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 B7 99 五、發明説明(πλ ) 材料,有功能基團的多孔材料,非多 沾非夕e u ^非夕孔材枓,有功能基團 、非夕孔材料。圖3B中二作用力曰& ~入 一起的μ 3〇〇和基底3 5 5。基底3⑽是由壓電材料製 作(例如壓電陶資PZT)。在圖3A中描述的任何材料均可 使用。就如圖3Β中所示,基底3⑽的主表面以和35〇 均被覆以導電層(例如薄金屬片),導電層被用作給壓電材 料提供,量的電極。兩個導電面可與外部信號源36〇相 連。在第二個基底3 5 5的表面製作了 _個環行電極元件陣 列、37〇。每—组内的電極都是互相連通的。因此就有兩個 電連接墊3 72 # 3 76與這兩组電極相連。在表面上製作 了電極陣列37G的基底3 55被附著,結合或連接到壓電 基底300上。壓電基底3G() # 3 5 5之間的小心結合是必 需的m如此’從基底3⑽所產生的聲波場才可透 過基底355而與同基底355直接或非直接接觸的介質(圖 3B沒有示出)整合。兩個基底間因該完全結合以保證在它 們之間不存在空隙…種結合基底的方法是將它們黏合在 +起。 圖3B中的壓電基底3〇〇可透過基底3 00的表面32〇 和3 5 0的連接用外部信號源3 6 〇供給能量。當將來自信 號源3 6 0的合適波形(合適頻率的典型正弦信號)的A匸信 號加到基底上時,基底300所產生的機械振動可透過基底 355整合到介質(圖3B中未示出),從而在介質中產生聲 波場。介質中的實體分子將經歷源於聲場的聲場力作用。 圖3 B中基底3 5 5上的電極陣列3 7 0透過外部信號源3 8 0Micromachining and microfabrication. SPIE Optical Engineering Press, Bellingham, Washington, USA (1997)). Microstructuring methods can include many basic steps, for example: photolithography mask making, metal layer fabrication, dielectric layer fabrication, photoresist layer fabrication, photoresist layer photolithography using a reticle and developing solution, metal layer And dielectric layer processing. The electrode can be made of metal materials: aluminum, gold, silver, tin, copper, platinum, palladium, and carbon. Semiconductor materials are phosphorous-doped, and any other material with high conductivity. Those who are proficient in microstructure and micromachining can easily decide what methods and materials to use for the fabrication of such electrodes. The electrodes shown in Figure 3A are mutually offset electrodes, although there are many other electrode structures available. For example: the electrodes can be offset electrodes, spiral electrodes, multiple electrodes, etc. In the fabrication of electrodes of different geometries, many steps are the same. The difference is that different shapes of reticle are used, which correspond to the required electrode array. The piezoelectric substrate 300 in FIG. 3A can be supplied with energy through an external signal source 3 60 through the connection between the surface 3 2 0 of the substrate 300 and the pads 3 4 6 on the substrate 300. When an AC signal of a suitable waveform (a typical sinusoidal signal of a suitable wavelength) generated from the signal source 3 60 is applied to the substrate. The substrate 300 will generate mechanical vibration. This vibration can be integrated into the medium directly or indirectly connected to the substrate 300 (not shown in Figure 3A), and a sound field is generated in the medium. The solid molecules in the medium will Experience the sound field force from the sound field. For such a two-acting wafer, vibration occurs only in a specific area of the piezoelectric substrate. These areas correspond to the electrodes connected to the connection block 346. The electrode array 3 4 0 on the substrate 3 0 in Figure A can pass through the pad _-100-_ This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 593683 A7 _____B7 V. Invention Note () and 4 6 use an external ^ number source 3 8 0 to provide energy and generate a non-uniform electric field in the medium directly or indirectly connected to the electrode array. The frequency of the signal provided by the signal source 380 may be less than 1HZ or greater than 1GHZ. The physical molecules in the medium are subjected to electric field forces (for example, conventional dielectrophoretic forces). The surface of the substrate 300 with the electrode array 34 may be further coated or coated with a thin layer of functional substance. In this case, when a medium is introduced into an instrument with a substrate 300, the medium is not in direct contact with the substrate. This indirect contact is through the functional substance layer (and through some areas of the electrode array) 340). The functional substance layer can be used to immobilize specific biomolecules on the surface of the substrate. Examples of functional layers include, but are not limited to, molecular monolayers, membranes, glues, porous or non-porous material layers. Functional layer An additional layer that can adhere to the surface of a substrate. Another possibility is that the functional layer can be formed by direct chemical modification on the substrate surface. Ideally, there should be minimal or no non-specific binding between the 疋 ′ functional layer and molecules other than the molecule to be immobilized, and effective binding or attachment of the target molecule should be ensured. Specific molecules that are integrated into the functional layer to bind the target molecule to the substrate surface are called functional groups. Examples of functional groups include, but are not limited to, acetaldehyde, carbodiimide, succinimide ester, antibody '5: body and exogenous lectin. Functional groups also include chemical groups and sites formed by chemically modifying molecules on the surface of the wafer. The functional group can be selected from the following, which can form a group of hydrophilic molecular monolayers, a hydrophilic molecular monolayer with functional groups, a hydrophobic molecular monolayer, a hydrophobic molecular monolayer with functional groups, a hydrophilic membrane, and functional groups Hydrophilic membrane, hydrophilic glue, hydrophilic glue with functional groups, hydrophobic glue, hydrophobic glue with functional groups, porous -------- 101 -_____ This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 593683 A7 B7 99 V. Description of the invention (πλ) Materials, porous materials with functional groups, non-porous and non-corrosive materials ^ Feixi porous materials 枓, functional groups, non-polycrystalline materials . In Fig. 3B, the two acting forces are & ~~ 3 and the substrate 3 55. The substrate 3⑽ is made of a piezoelectric material (for example, piezoelectric ceramics PZT). Any of the materials described in Figure 3A can be used. As shown in FIG. 3B, the main surface of the substrate 3⑽ is both covered with a conductive layer (for example, a thin metal sheet), and the conductive layer is used as an electrode for the piezoelectric material. The two conductive surfaces can be connected to an external signal source 36o. On the surface of the second substrate 355, a ring electrode element array, 37 °, was fabricated. The electrodes in each group are interconnected. Therefore, there are two electrical connection pads 3 72 # 3 76 connected to these two sets of electrodes. The substrate 3 55 on which the electrode array 37G has been formed on the surface is attached, bonded or connected to the piezoelectric substrate 300. A careful combination between the piezoelectric substrate 3G () # 3 5 5 is necessary, so that the acoustic wave field generated from the substrate 3⑽ can pass through the substrate 355 and directly or indirectly contact the medium with the substrate 355 (not shown in FIG. 3B). (Shown) integration. The two substrates should be fully bonded to ensure that there is no gap between them ... One way to bond the substrates is to glue them together. The piezoelectric substrate 300 in FIG. 3B can supply energy through an external signal source 36 for connecting the surfaces 32 and 3500 of the substrate 300. When an A 匸 signal from a suitable waveform (a typical sinusoidal signal of a suitable frequency) from the signal source 360 is applied to the substrate, the mechanical vibration generated by the substrate 300 can be integrated into the medium through the substrate 355 (not shown in FIG. 3B) ) To produce a sound wave field in the medium. The solid molecules in the medium will experience the effects of sound field forces originating from the sound field. The electrode array 3 7 0 on the substrate 3 5 5 in FIG. 3B passes through an external signal source 3 8 0
-102- A7 B7 100 五、發明説明( 提供能量,而在與電極陣列直接或非直接接觸的介質上產 生一個非均一的電場。信號源3 8 〇所提供的信號的頻率可 小於1HZ或大於igHZ。介質中的電場可對置於其中的 實體分子施加作用力(例如··常規介電電泳力)。 圖3B中基底355的表面也帶有一個電極陣列37〇, 它可進一步的塗覆或覆蓋一個薄層的功能物質。在這種情 況下,當將介質引入帶有基底355(和基底3〇〇)的儀器中 時,介質與基底是非直接接觸的。介質與基底3 5 5是透過 功能物質層(和透過微極陣列3 70的某些區域)來非直接接 觸的。功能材料層可被用於在基底3 5 5的表面固定特定的 生物分子。功能層的一些例子在圖3 A的行文中已給出。 圖3 C中,二作用力晶片包含結合或附著在一起的基底 3 9 0和3 5 5。基底3 9 0可用任何固體材料製造,例如: 矽,玻璃,塑膠等,只要它們能夠被微構造或顯微機械加 工成通道和池。基底390最好不要用壓電材料來製造。在 基底3 9 0上製作了一個壓電元件陣列3 9 5 (例如:聲波源 陣列)。製作過程如下:在基底3 9 〇的確定位置蝕刻確定 的深度而形成一個環狀陣列池。每一個池都有一個預先確 定的以圓直徑(5 0μηι到mm)和池深度(5μηι到1〇111111)來 表述的空間。蝕刻步驟可包括使用光刻或其他的顯微機械 加工方法。蝕刻的池透過與池有相同深度的通道相連接。 在基底的表面加一個導電材料(例如··金,鈦)的薄層(例 如:在50nm *μιη間)以覆蓋蝕刻的池和通遒。因此,在 蝕刻的池的和通道的底部的薄的導電層是連續的電連通 __-103- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 101 五、發明説明( 的。然後,在基底的表面製作一個壓電材料薄層,薄層的 厚度最好小於池的深度。在基底的表面上蝕刻的池和^道 之外的其他區域上的金屬層和壓電層可用特定的處理步騾 去除。在基底上加一薄的導電層,以蓋住所有的池和‘ 道。導電層有足夠的厚度,因此,它與基底的整個表面的 所有地方都是電連通的。因此,我們就有了兩個導電;, 一個在蝕刻的池和通道的底部,另一個在基底的表面y在 兩個導電層之間有一個用壓電材料所製作的環狀盤(如* discs)陣列。因此在圖3C的基底39〇上,我們製作了一個 透過電極包夾壓電盤而平行相連的壓電元件3 9 5陣列。電 導層可透過烊盤3 92和3 9 8而與外部信號源36〇相連。 以上的在非壓電基底上製作壓電元件3 9 5陣列的過程僅作 為例證。任何適合於在基底製作薄壓電材料層的微製作方 法和顯微機械加工方法均可採用。精通於製作聲學陣列的 人,可很容易的選擇合適的方法,過程,方案和材料來在 晶片上製作聲波源(或壓電元件陣列),其他結構的壓電元 件亦可被採用。舉例來說,蝕刻的池可以是任何形狀,例 如·正方形’二角形’菱形’等等。可以是適合於產生所 要求的聲波的任何大小。製作的壓電元件陣列不需要埋入 基底:事實上它們可以在基底的表面上形成。製作的所有 壓電7C件不需要連接在一起。舉例來說:一些元件可連在 一起,在其他的實例中,單個的元件可被選擇性的選通。 0 3C中第一個基底355上製作了一個相互錯位式 的電極陣列34G。此電極陣列與圖3A中所示的相互錯位 本纸張尺度勒中國國家標準(ϋ)Α4規格(210 X 297公釐) 593683 A7 B7 102 五、發明説明( 式電極有相似的結構,包含兩組線形電極元件。每組内的 黾極元件相互連通。因此就有兩個電連接塾3 4 2和3 4 6 與這兩組電極相連接。在表面已製作電極陣列34〇的基底 3 5 5與基底3 90附著,結合或連接。基底39〇和基底 3 5 5間的仔細的結合是必需的,只有這樣聲波場才能從基 底390透過基底355直接或非直接連接的介質上(圖3B 中未示出)。兩個基底取好是完全結合,以使它們之間無 S氣空隙。結合基底355和390的一種方法可以是將它 們黏合在一起,還可採用其他的方法,例如··陽極鍵合。 圖3C中在基底390上的壓電元件395可透過連接墊392 和3 9 8的連接從外部信號源36〇供給能量。當將從信號 源中發出的合適波形(合適頻率的典型的正弦信號)的A c 信號加到壓電元件3 9 5上時,就會從這些元件上產生機械 振動。這種振動可透過3 5 5與和基底3 5 5直接或非直接 接觸的介質(圖3C中未示出)整合,從而在介質中產生聲 波場。在這種方式下,每個壓電元件395都是一個聲波 源。介質中的實體分子將經歷由聲波場所生產的聲場力。 圖3 B中基底3 5 5上的電極陣列3 4 0可由外部信號源3 8 0 提供能量而在介質中產生磁場。介質中的電場將對放入的 其中的實體分子施加電作用力(例如常規介電電泳力)。圖 3C中帶有電極陣列340的基底3 5 5的表面可進一步塗覆 或覆盍一個薄層的功能基團。在這種情況下,當介質被引 入帶有基底355和390的儀器時,介質與基底之間就是 非直接接觸。這種介質和基底間的非直接接觸是透過功能 _____ -105- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 593683 五、發明説明( A7 B7 103 ib、和在特疋區域透過電極陣列34〇)來實現。功能材 可被用於在基底3 5 5的表面固定特定的生物分子。在 描id圖A的行文中已提供了 一些功能層的例子。 ^本發月的多力晶片(例如1,2,3 A - 3 C所示)來用 二戎::万去對貫體分子實行操作,還需要構建-個流體 ^ ’斋。圖4中示出的這種流體池的一個例子。在流體 池^底邵有一個多力晶片㈣,透過中間挖孔的塾片52〇 萑疋月旦池的厚度。頂板上帶有一個流體輸入口 5 6 0和一 輸出口 58〇。這三部分結合到一起而組成一個流體 了便於說明,這三部分沒有畫在一起。多力晶片有 ί丄匕一的表面或基底上内建的結構。為了清晰,在圖4 士、頭不坪細的結構’同時為了說明,這裏還採用了圖2 f明夕力晶片的示意圖。圖4中-的多力晶片500包括一 7早7C陣列’其中的每個單元都能夠產生電場,磁場和聲 % ’每-個單元還可進一步包含生物元件。 Θ中所7ΓΓ U池僅是為了說明。流體池和操作裝置 ::其他的排列來製作,而非如目4中所示的那樣。舉例 來說,墊片520可以是頂蓋55〇的一部分。因此,鮮 5=就被製作成帶有一個特定通道的結構。頂蓋可以是破 瑪土辰’玻瑀基底一面的一個區域可以加工出具有一定厚 度的通道。對流體池和操作裝置的最具體的要求是··基底 能^撐要操作的實體分子,並且其内部結構要能對實體 / 刀子產生多重作用力。流體池包含一個可與基底相結合的 腔,這個腔可被用於包含要操作的實體分子。流體池可以 本纸張尺度勒中國國家標準(CNS) Α4規格(21〇Χ297公董) -106- 593683 A7 B7 五、發明説明(1()4 ) 是開放的也可以是封閉的。它可包含底部,頂部和側壁。 圖4中展示了一個這種流體池的例子。這種流體池可以有 一個藝片或一個塾圈。流體池底部有一個多力晶片。這種 流體池應帶有一個可在底部產生物理場/力的晶片和至少 一個可在流體池的頂部產生物理場/力的晶片。對於一個 封閉的流體池而言,最好還有一個輸入口和一個輸出口輸 入用於向流體池中輸入包含要操作實體分子的樣品。輸出 部分用於去除流體池中的樣品。對於一個開放的流體池, 輸出口和輸出口可整合在一起。流體池可以是有底面與側 壁的開放形式,當加入樣品並蓋上頂盤後,它就成為一個 封閉的流體池。然後裝有樣品的流體池可被完全密封以用 於實驗。文獻中有許多有關流體池,整合進晶片和生物晶 片的報道。文獻中報道的裝置的結構和佈局可被借用到當 前的流體池或者多力晶片操作儀器的發明中。下面是一些 描述流體池的文獻·· “Dielectrophoretic manipulation of particles by Wang et al,in IEEE Transaction on Industry Applications,Vol. 33,No· 3,May/June,1997,pages 660-669”; “Separation of human breast cancer cells from blood by differential dielectric affinity by Becker et al5 in Proc. Natl. Acad. Sci·,Vol·,92,January 1995,pages 860-864”; “Selective dielectrophoretic confinement of bioparticles in potential energy wells by Wang et al. in J. Phys. D: Appl. Phys.? Volume 26, pages 1278-1285”; “Ultrasonic manipulation of particles and cells” by Coakley et al. Bioseparation. 1994· 4: 73-83”,“Particle column ____-107-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 B7 五、發明説明(1〇5 ) formation in a stationary ultrasonic field55 by Whitworth et al.5 J. Accost. Soc. Am. 1992· 91: 79-85”,“Electrokinetic behavior of colloidal particles in traveling electric fields: studies using yeast cells by Huang et al, in J. Phys. D: Appl. Phys.,Vol. 26, pages 1528-1535”,“Positioning and manipulation of cells and microparticles using miniaturized electric field traps and traveling waves. By Fuhr et al.? in Sensors and Materials. Vol. 7: pages 131-146”,“Dielectrophoretic manipulation of cells using spiral electrodes by Wang, X-B. et al.5 in Biophys. J. Volume 72, pages 1887-1899,1997”; “Preparation and hybridization analysis of DNA/RNA from E. coli on microfabricated bioelectric chip by Cheng,J. et al·,in Nature Biotech.,Volume,70: 2321-2326, 1998”; “Cell separation on microfabricated electrodes using dielectrophoretic/gravitational field-flow-fractionation by Yang, J· et al. in Anal. Chem. 71: 911-918, 1999,’· 圖5 A- 5 C所示的是本發明的兩作用力晶片的例子,能 夠產生用以操作物件的聲力和磁場力。圖5 A中所示的是 製作在基底3 0 0上用以產生磁場力的微電磁單元陣列或微 電磁單元。基底3 00是由壓電材料(例如壓電陶瓷PZT) 所製作,因此可以產生聲場。在圖3 A的行文中所提到的 任何壓電材料均可採用。基底300的兩個主表面均由電導 層(薄金屬層)覆蓋,它們被作為電極來給壓電材料提供能 量。在圖5A中,為了清晰起見,僅示出了底部表面的導 電層320,而在頂層的導電層則未示出。然而在基底300 ___-108-__ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂-102- A7 B7 100 V. Description of the invention (Provides energy and generates a non-uniform electric field on the medium in direct or indirect contact with the electrode array. The frequency of the signal provided by the signal source 3 8 〇 may be less than 1HZ or greater than igHZ. The electric field in the medium can exert a force on the solid molecules placed therein (for example, the conventional dielectrophoretic force). The surface of the substrate 355 in FIG. 3B also has an electrode array 37, which can be further coated Or cover a thin layer of functional substance. In this case, when the medium is introduced into an instrument with a substrate 355 (and substrate 300), the medium is not in direct contact with the substrate. The medium and the substrate 3 5 5 is Indirect contact through the functional substance layer (and through certain areas of the micropolar array 3 70). The functional material layer can be used to immobilize specific biomolecules on the surface of the substrate 3 5 5. Some examples of functional layers are shown in the figure 3 A has been given in the text. In Figure 3 C, the two-force wafer contains the substrates 3 9 0 and 3 5 5. The substrate 3 9 0 can be made of any solid material, such as: silicon, glass, Plastic, etc. As long as they can be microstructured or micromachined into channels and cells. The substrate 390 is preferably not made of piezoelectric materials. A piezoelectric element array 3 9 5 is fabricated on the substrate 3 9 0 (for example: a sound source array ). The manufacturing process is as follows: a ring-shaped array cell is formed by etching a predetermined depth at a certain position on the substrate 390. Each cell has a predetermined circle diameter (50 μηι to mm) and a cell depth (5 μηι to 1〇111111). The etching step may include the use of photolithography or other micro-machining methods. The etched pools are connected through channels with the same depth as the pools. A conductive material (such as · · Gold, titanium) thin layer (for example: between 50nm * μιη) to cover the etched pool and via. Therefore, the thin conductive layer in the etched pool and the bottom of the channel is continuous electrical communication __- 103- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 101 5. Description of the invention (). Then, a thin layer of piezoelectric material is made on the surface of the substrate, and the thickness of the thin layer is the best Less than the depth of the pool. The metal layer and piezoelectric layer on the surface of the substrate other than the pool and channel etched can be removed with a specific processing step. A thin conductive layer is added to the substrate to cover All pools and channels. The conductive layer is of sufficient thickness so that it is in electrical communication with the entire surface of the substrate. Therefore, we have two conductive layers; one in the etched pool and channel At the bottom, another on the surface of the substrate, there is an array of annular discs (such as * discs) made of piezoelectric material between the two conductive layers. So on the substrate 39 of Figure 3C, we made a transmission The electrodes are sandwiched by a piezo disc and a 3 9 5 array of piezo elements connected in parallel. The conductive layer can be connected to the external signal source 36 through the disks 3 92 and 3 98. The above process of fabricating a 3 95 array of piezoelectric elements on a non-piezoelectric substrate is merely an example. Any microfabrication method and micromachining method suitable for making a thin layer of piezoelectric material on a substrate can be used. Those who are proficient in making acoustic arrays can easily choose suitable methods, processes, solutions and materials to make acoustic wave sources (or piezoelectric element arrays) on wafers. Piezoelectric elements of other structures can also be used. By way of example, the etched pool can be of any shape, such as, for example, square " diamond " It can be of any size suitable for producing the required sound waves. The fabricated piezoelectric element arrays do not need to be buried in the substrate: in fact they can be formed on the surface of the substrate. All manufactured 7C pieces need not be connected together. For example: some elements may be connected together, in other examples, individual elements may be selectively gated. An offset electrode array 34G is fabricated on the first substrate 355 in 0 3C. This electrode array is misaligned with each other as shown in Figure 3A. The paper size is based on the Chinese National Standard (ϋ) A4 (210 X 297 mm) 593683 A7 B7 102 5. Description of the invention (The electrode has a similar structure, including two Set of linear electrode elements. The 黾 electrode elements in each group are connected to each other. Therefore, there are two electrical connections 塾 3 4 2 and 3 4 6 connected to these two groups of electrodes. The substrate on the surface has an electrode array 34〇 3 5 5 is attached, bonded, or connected to the substrate 3 90. Careful bonding between the substrate 39 and the substrate 3 5 is necessary so that the acoustic wave field can pass directly or indirectly from the substrate 390 through the substrate 355 (Figure 3B). (Not shown in the figure). The two substrates are taken to be completely combined so that there is no S air gap between them. One way to combine the substrates 355 and 390 can be to glue them together, or other methods, such as · Anode bonding. The piezoelectric element 395 on the substrate 390 in FIG. 3C can be supplied with energy from an external signal source 36 through the connection of the connection pads 392 and 398. When an appropriate waveform (suitable frequency) will be emitted from the signal source Typical sine letter When the A c signal is applied to the piezoelectric elements 3 9 5, mechanical vibrations are generated from these elements. This vibration can be transmitted through 3 5 5 and the medium directly or indirectly in contact with the substrate 3 5 5 (Figure 3C). (Not shown in the figure) integration to generate a sound wave field in the medium. In this way, each piezoelectric element 395 is a sound wave source. The solid molecules in the medium will experience the sound field forces produced by the sound wave field. Figure The electrode array on the substrate 3 3 5 in 3 B 3 4 0 can be supplied with energy from an external signal source 3 8 0 to generate a magnetic field in the medium. The electric field in the medium will exert an electrical force on the physical molecules placed therein (such as conventional Dielectrophoretic force). The surface of the substrate 3 5 5 with the electrode array 340 in FIG. 3C may be further coated or covered with a thin layer of functional groups. In this case, when the medium is introduced into the substrate 355 And 390 instruments, the medium and the substrate are indirect contact. This indirect contact between the medium and the substrate is through the function _____ -105- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 public %) 593683 V. Description of Invention A7 B7 103 ib, and through the electrode array 34 o) in the special area. Functional materials can be used to immobilize specific biomolecules on the surface of the substrate 3 5 5. Some have been provided in the text of Figure A. An example of a functional layer. ^ The multi-power chip of this month (such as shown in 1,2,3 A-3 C) to use Erjong :: Wan to perform operations on the molecules, you need to build a fluid ^ ' Fast. An example of such a fluid pool is shown in Figure 4. At the bottom of the fluid pool there is a multi-force wafer ㈣, which passes through the middle digging cymbal 5200 to the thickness of the moon pool. The top plate has a fluid inlet 560 and an outlet 58. These three parts are combined to form a fluid for easy explanation. These three parts are not drawn together. Multi-force chips have built-in structures on the surface or substrate. For the sake of clarity, in Figure 4 the structure of the taxi and the head is not thin, and for the sake of explanation, the schematic diagram of the Mingxi force chip in Figure 2f is also used here. The multi-force chip 500 in FIG. 4 includes a 7-7C array ', each of which can generate an electric field, and the magnetic field and sound%' can further contain biological elements. The 7ΓΓ U pool in Θ is for illustration only. Fluid cell and manipulator :: Other arrangements are made instead of as shown in head 4. For example, the gasket 520 may be part of the top cover 550. Therefore, fresh 5 = is made into a structure with a specific channel. The top cover can be a region with a certain thickness on a side of the base of broken matuchen 'glass. The most specific requirements for fluid pools and operating devices are: · The substrate can support the solid molecules to be operated, and its internal structure must be able to exert multiple forces on the solid / knife. The fluid cell contains a cavity that can be combined with the substrate. This cavity can be used to contain the solid molecules to be manipulated. The fluid pool can be based on the Chinese National Standard (CNS) A4 specification (21〇297297) -106- 593683 A7 B7 5. The invention description (1 () 4) is open or closed. It can contain bottom, top and side walls. An example of such a fluid pool is shown in Figure 4. Such a fluid pool can have an art piece or a loop. There is a multi-force wafer at the bottom of the fluid cell. Such a fluid cell should have a wafer that generates physics / force at the bottom and at least one wafer that generates physics / force at the top of the fluid cell. For a closed fluid cell, it is best to have an input port and an output port to input the fluid cell with the sample containing the entity molecule to be manipulated. The output section is used to remove samples from the fluid cell. For an open fluid pool, the outlet and outlet can be integrated. The fluid cell can be open with bottom and side walls. When the sample is added and the top plate is covered, it becomes a closed fluid cell. The fluid cell containing the sample can then be completely sealed for experiments. There are many reports in the literature about fluid pools, integration into wafers and biochips. The structure and layout of the devices reported in the literature can be borrowed from current inventions of fluid cells or multi-force wafer manipulation instruments. Here are some documents describing fluid pools: "Dielectrophoretic manipulation of particles by Wang et al, in IEEE Transaction on Industry Applications, Vol. 33, No. 3, May / June, 1997, pages 660-669"; "Separation of human breast cancer cells from blood by differential dielectric affinity by Becker et al5 in Proc. Natl. Acad. Sci ·, Vol ·, 92, January 1995, pages 860-864 ";" Selective dielectrophoretic confinement of bioparticles in potential energy wells by Wang et al. in J. Phys. D: Appl. Phys.? Volume 26, pages 1278-1285 ";" Ultrasonic manipulation of particles and cells "by Coakley et al. Bioseparation. 1994 · 4: 73-83", "Particle column ____- 107-_ This paper size applies to China National Standard (CNS) A4 (210X297 mm) 593683 A7 B7 V. Description of the invention (105) Formation in a stationary ultrasonic field 55 by Whitworth et al. 5 J. Accost Soc. Am. 1992 · 91: 79-85 "," Electrokinetic behavior of colloidal particles in traveling electric fields: studi es using yeast cells by Huang et al, in J. Phys. D: Appl. Phys., Vol. 26, pages 1528-1535 "," Positioning and manipulation of cells and microparticles using miniaturized electric field traps and traveling waves. By Fuhr et al.? in Sensors and Materials. Vol. 7: pages 131-146 "," Dielectrophoretic manipulation of cells using spiral electrodes by Wang, XB. et al. 5 in Biophys. J. Volume 72, pages 1887-1899, 1997 ";" Preparation and hybridization analysis of DNA / RNA from E. coli on microfabricated bioelectric chip by Cheng, J. et al., In Nature Biotech., Volume, 70: 2321-2326, 1998 ";" Cell separation on microfabricated electrodes using dielectrophoretic / gravitational field-flow-fractionation by Yang, J. et al. in Anal. Chem. 71: 911-918, 1999, '· Figures 5A-5C show the two-force wafer of the present invention. For example, it is possible to generate acoustic and magnetic forces for operating an object. Shown in FIG. 5A is a micro-electromagnetic unit array or a micro-electromagnetic unit fabricated on a substrate 300 to generate a magnetic field force. The substrate 300 is made of a piezoelectric material (such as piezoelectric ceramic PZT), so it can generate a sound field. Any piezoelectric material mentioned in the text of Figure 3A can be used. Both major surfaces of the substrate 300 are covered by a conductive layer (thin metal layer), which are used as electrodes to supply energy to the piezoelectric material. In Fig. 5A, only the conductive layer 320 on the bottom surface is shown for clarity, and the conductive layer on the top layer is not shown. However, at the base 300 ___- 108 -__ This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) binding
緣 593683 A7 B7 五、發明説明( 的頂層表面示出了一個連接塾4 3 5。因此,從信號源3 6 0 所產生的電信號將連接到電極4 3 5和3 2 0以給壓電基底 提供能量。 在基底3 0 0的表面的導電層上加了一個絕緣的介電層 (在圖5中沒有示出)。介電層可以用多種材料製成,例 如:二氧化碎,氮化梦或其他的介電膜。介電層的厚度可 以從1微米到200微米。介電層的厚度最好在3微米到 5 0微米之間。然後在介電層上製作了 一個微電磁單元陣列 4 1 5。為了要製作電磁單元,介電層應該被適當的處理, 例如:介電層應有一個光滑的表面或者被適當的拋光。只 要在對電磁單元施加電流時,它能夠產生磁場,它可以採 用任何的形狀和結構排列。每一個單元都可以有不同的幾 何形狀,例如··在。〇-卩€11(111^118卩的61^30卩1泌31:1〇11561^1]^〇: 09/399,299,filed on September 16,1999.所透露的。在圖 5 所 顯不的能夠整合到晶片上的電磁單元的例子包括,但不限 於在以下的文章或出版物中所描述的結構:Ahn,C.,et al.,J. Microelectromechanical Systems. Volume 5: 151-158 (1996); Ahn,C·,et al·,IEEE Trans. Magnetics. Volume 30: 73-79 (1994); Liakopoulos et al., in Transducers 97, pages 485-488, presented in 1997 International Conference on Silid-State Sensors and Actuators, Chicago, June 16-19, 1997; US patent No. 5,883,760 by Naoshi et al·不同的微構造方案和方法,就像在文獻和出 版物中提到的並且被立即應用的,均可被用來製作這些電 磁單元。在 “Handbook of Microlithography,Micromachining -109- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂Edge 593683 A7 B7 V. Description of the invention (The top surface of the display shows a connection 塾 4 3 5. Therefore, the electrical signal generated from the signal source 3 6 0 will be connected to the electrodes 4 3 5 and 3 2 0 to give the piezoelectric The substrate provides energy. An insulating dielectric layer (not shown in Figure 5) is added to the conductive layer on the surface of the substrate 300. The dielectric layer can be made of a variety of materials, such as crushed dioxide, nitrogen Dream or other dielectric film. The thickness of the dielectric layer can be from 1 micron to 200 microns. The thickness of the dielectric layer is preferably between 3 microns and 50 microns. Then a micro-electromagnetic layer is fabricated on the dielectric layer. Cell array 4 1 5. In order to make an electromagnetic unit, the dielectric layer should be properly treated, for example: the dielectric layer should have a smooth surface or be appropriately polished. As long as it can generate current when the electromagnetic unit is applied with current, Magnetic field, it can be arranged in any shape and structure. Each unit can have different geometries, for example, in. 〇- 卩 € 11 (111 ^ 118 卩 61 ^ 30 卩 1bi 31: 1〇11561 ^ 1] ^ 〇: 09 / 399,299, filed on September 16, 1999. Examples of electromagnetic units that can be integrated into a wafer shown in Figure 5 include, but are not limited to, the structures described in the following articles or publications: Ahn, C., et al., J. Microelectromechanical Systems. Volume 5: 151-158 (1996); Ahn, C., et al., IEEE Trans. Magnetics. Volume 30: 73-79 (1994); Liakopoulos et al., In Transducers 97, pages 485-488, presented in 1997 International Conference on Silid-State Sensors and Actuators, Chicago, June 16-19, 1997; US patent No. 5,883,760 by Naoshi et al. Different microstructuring schemes and methods, as mentioned in literature and publications Can be used to make these electromagnetic units. In "Handbook of Microlithography, Micromachining -109- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding"
線· 593683 A7 B7 五、發明説明(1〇7 ) and Microfabrication, by Rai-Choudhury P. (Editor),Volume 2: Micromachining and microfabrication. SPIE Optical Engineering Press, Bellingham, Washington,USA (1997)” 中有很多的微光 刻和微構造的例子和原則。基於電磁單元的特殊的幾何學 和其他要求(例如:必需的磁場力),那些精通於在基底上 微構造和磁薄層處理的人可以選擇合適的材料和方法來構 造電磁單元。 圖5 A中顯示的陣列中的電磁單元4 1 5可被單獨選通。 另一種可能,某些單元或全部的單元可被平行的連接在一 起。不同的可選擇性的激發陣列中單個單元的方法,例如 在 co-pending US patent application serial No: 09/399,299,filed on September 16,1999做講到的均可被採用。圖5 A中顯示 與電磁單元4 15製作在一起的焊盤_ 440。為了清楚,我們 只示出了一些在連接墊和一些電磁單元415間的電連接, 雖然在所有的單元都可以單獨選通的情況下,所有的單元 都有相應的焊盤。透過這些焊盤4 4 0,從外部電流源4 5 0 施加的電流(AC或DC)可以被連到電磁單元415上,從 而使單元415能夠被提供能量而產生磁場。 圖5 A中所示的壓電基底3 0 0可以以外部信號源3 6 0透 過連接墊4 3 5和導電面3 2 0而供給能量。當從信號源 3 6 0施加合適波形(特定波長的典型的正弦信號)的A C信 號時,從基底上產生的機械振動能夠整合到與基底3 00直 接或非直接接觸的介質上,從而在介質中產生聲波場。介 質中的實體分子將經受源於聲場的聲場力。圖5 A中的電 _____ -110-___ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 593683 A7 B7 108 五、發明説明( 磁單元4 1 5能透過外部電流源4 5 0而在介質中產生磁 場。該磁場將對具有磁學性質的物件產生磁場力。 圖5中以帶有一個電磁單元陣列的基底3〇〇的表面可進 一步包被或覆蓋一層功能物質。在這種情況下,當介質被 引入到帶有基底3 0 0的儀器時,介質將與基底3 〇 〇非直 接接觸。這種非直接接觸是透過功能層(和透過某些區域 的電磁單元)來實現的。功能層可用於在基底3〇〇的表面 固定特定的生物分子。在描述圖3A的行文中一些功能層 的例子。圖5B所示的一個製作在壓電基底3〇〇表面的用 以產生聲波的聲波源陣列。在第二個基底355上製作了一 個微電磁單元陣列。然後將第二個基底與第一個聲學基底 結合,從而產生一個可以同時產生聲場力和磁場力的多力 晶片。聲波源陣列是透過在壓電基底3〇()的表面(圖5B 中的上表面)上製作一個電極陣列4 6 〇而形成。圖5 B中 的電極陣列460是一個環狀電極陣列,他們透過電極線 46 8而連接在一起。如果能夠滿足所需的聲波源,也可以 使用其他幾何形狀的電極。雖然圖5A中的電極是連在一 起的,陣列中的電極也可以是單獨定址的,或者陣列中的 某些電極可以是連接在一起的。另一個表面32〇(圖5B中 的底面)可以覆蓋以導電材料薄層。當來自外部信號源 3 60的AC 號透過連接墊462加到電極表面32〇和 甩極陣列4 6 0上時’夾在表面3 2 〇和電極陣列4 6 〇間的 基底300的區域,將遭受AC電流並產生機械振動。在壓 電基辰上製作電極陣列的方法與目3A製作相互錯位式電 ^張尺度適用_家標準_ A4規格(21〇: -111 - :297公釐) 593683Line · 593683 A7 B7 V. Invention Description (107) and Microfabrication, by Rai-Choudhury P. (Editor), Volume 2: Micromachining and microfabrication. SPIE Optical Engineering Press, Bellingham, Washington, USA (1997) Many examples and principles of microlithography and microstructures. Based on the special geometry and other requirements of the electromagnetic unit (for example, the necessary magnetic field force), those who are proficient in microstructures and thin layer processing on the substrate can choose Suitable materials and methods to construct the electromagnetic unit. The electromagnetic units 4 1 5 in the array shown in Figure 5 A can be individually gated. Alternatively, some or all of the units can be connected together in parallel. Different The method of selectively exciting a single cell in an array, such as that described in co-pending US patent application serial No: 09 / 399,299, filed on September 16, 1999, can be used. Figure 5A shows electromagnetic and electromagnetic fields. Units 4 and 15 are made together with pads_440. For clarity, we only show some electrical connections between the connection pads and some electromagnetic units 415, although In the case where all the units can be individually gated, all units have corresponding pads. Through these pads 4 4 0, the current (AC or DC) applied from an external current source 4 50 can be connected to the electromagnetic Unit 415, so that unit 415 can be supplied with energy to generate a magnetic field. The piezoelectric substrate 3 0 0 shown in FIG. 5A can be transmitted through an external signal source 3 6 0 through the connection pad 4 3 5 and the conductive surface 3 2 0 Supply energy. When an AC signal of a suitable waveform (typical sinusoidal signal of a specific wavelength) is applied from a signal source 3 60, the mechanical vibration generated from the substrate can be integrated into a medium that is in direct or indirect contact with the substrate 3 00, Thereby, a sound wave field is generated in the medium. The solid molecules in the medium will experience the sound field force originating from the sound field. The electricity in Figure 5 A _____ -110 -___ This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 593683 A7 B7 108 V. Description of the invention (The magnetic unit 4 1 5 can generate a magnetic field in the medium through an external current source 4 5 0. This magnetic field will generate a magnetic force on objects with magnetic properties. Figure 5 With an array of electromagnetic cells 3〇〇 surface of the substrate may be further coated or covered with a functional substance. In this case, when the medium is introduced into the instrument 300 with the substrate, the substrate in contact with the medium 3 billion billion non-direct. This indirect contact is achieved through the functional layer (and through the electromagnetic unit in some areas). The functional layer can be used to immobilize specific biomolecules on the surface of the substrate 300. Examples of functional layers are described in the text of Figure 3A. An acoustic wave source array formed on the surface of a piezoelectric substrate 300 for generating acoustic waves is shown in FIG. 5B. An array of micro-electromagnetic units is formed on the second substrate 355. The second substrate is then combined with the first acoustic substrate to produce a multi-force wafer that can simultaneously generate both sound field and magnetic field forces. The acoustic wave source array is formed by making an electrode array 46 on the surface of the piezoelectric substrate 30 () (the upper surface in FIG. 5B). The electrode array 460 in FIG. 5B is a ring-shaped electrode array, and they are connected together through the electrode wires 468. Electrodes of other geometries can also be used if the required sound source can be met. Although the electrodes in FIG. 5A are connected together, the electrodes in the array may be individually addressed, or some electrodes in the array may be connected together. The other surface 32 (the bottom surface in Fig. 5B) may be covered with a thin layer of conductive material. When the AC number from the external signal source 3 60 is applied to the electrode surface 32o and the pole array 460 through the connection pad 462, the area of the substrate 300 sandwiched between the surface 320 and the electrode array 460 will be Subject to AC current and produce mechanical vibration. The method of making an electrode array on a piezoelectric base and the method of making a mutual offset type with 3A ^ Zhang scale is applicable _ home standard _ A4 specifications (21〇: -111-: 297 mm) 593683
極陣列的方法是相似的。 電磁單元陣列415製作在第二層基底3 5 5上,如圖5β 所不。電磁單元415的幾何學與結構、陣列的佈局和製作 該電磁單S陣列的方法與圖5A所描述的電磁單元陣列相 似。包含有電磁單元陣列415的基底3 5 5被粘合在壓㊉ 基底3 00。基底3 00與基底3 5 5間的枯合需仔細操作包 以保證聲波能從基底3〇〇透過基底3 5 5傳入介質中(圖 5B中未標不)。粘合這兩種基底的方法與圖3b所示的粘 合聲學基底與容納介電電極的基底的方法相似。 圖5B所示的壓電基底3〇〇可透過墊板462上的線路和 傳導表面3 2 0被外部信號源3 6 〇所啟動。使用來自信號 源3 60的具有合適波形的交流電信號(如典型正弦信號, 合適的頻率)時,壓電感測器陣列產生機械振動並可透過 基底355傳入介質(圖5B中未標示)中,在介質中產生聲 場。由於聲場,一部分介質將感受聲場力。圖5B所示的 電磁單元陣列415可被外部電流信號源45 0啟動,在介 質中產生磁場。介質中的磁場將對具有合適磁特性的部分 施加磁場力。 已經容納有電磁單元陣列的基底3 5 5被塗覆一薄層功能 材料。這樣’當介質被引入包括基底355及基底300的 裝置時,介質與基底3 5 5間接聯繫。介質與基底3 5 5的 間接聯繫是透過功能材料層及某些區域的電磁單元建立 的。功能材料層可將生物分子固定在基底355上。在圖 3 A的描述中提供了功能材料層的一些例子。 ._________-112- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 593683 五、發明説明 A7 B7The polar array approach is similar. The electromagnetic unit array 415 is fabricated on the second layer substrate 3 5 5, as shown in FIG. 5β. The geometry and structure of the electromagnetic unit 415, the layout of the array and the method of making the electromagnetic single S array are similar to the electromagnetic unit array described in Fig. 5A. The substrate 3 5 5 containing the electromagnetic unit array 415 is adhered to the pressing substrate 3 00. The coupling between the substrate 3 00 and the substrate 3 55 needs to be carefully manipulated to ensure that sound waves can pass from the substrate 300 to the medium through the substrate 3 5 5 (not marked in Figure 5B). The method of bonding these two substrates is similar to the method of bonding the acoustic substrate and the substrate containing the dielectric electrode shown in FIG. The piezoelectric substrate 300 shown in FIG. 5B can be activated by an external signal source 36 by passing through the wiring and the conductive surface 3 2 0 on the pad 462. When using an AC signal with a suitable waveform (such as a typical sinusoidal signal, suitable frequency) from the signal source 3 60, the piezoelectric sensor array generates mechanical vibrations and can pass through the substrate 355 into the medium (not labeled in Figure 5B) A sound field is generated in the medium. Due to the sound field, part of the medium will experience the sound field force. The electromagnetic unit array 415 shown in FIG. 5B can be activated by an external current signal source 450, which generates a magnetic field in the medium. The magnetic field in the medium will exert a magnetic field force on the part with the appropriate magnetic characteristics. The substrate 3 5 5 which has already contained the array of electromagnetic cells is coated with a thin layer of functional material. In this way, when the medium is introduced into the device including the substrate 355 and the substrate 300, the medium is indirectly connected to the substrate 3 5 5. The indirect connection between the medium and the substrate 3 5 5 is established through the functional material layer and the electromagnetic unit in some areas. The functional material layer may fix the biomolecules on the substrate 355. Some examples of functional material layers are provided in the description of Figure 3A. ._________- 112- This paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) 593683 V. Description of invention A7 B7
圖5C描述了 一個微電磁單元陣列415,是在固㈣其底 390上加工製作壓電盤元件395。加工壓電元件395的方 法與圖3C描述的製作壓電元件的方法相似。製作電磁= 元的方法與圖5A圖5B描述的製作電磁單元的方=相似 這些方法可以結合使用。微製造及磁薄膜加工方面的專業 人士可容易的決定和採用適當的加工工藝將壓電元件 及電磁基礎415加工在一個基底上。圖5C所示的壓電元 件是盤狀,但它可根據聲場的需要加工成別的形狀。同樣 的,電磁單元415的形狀及結構也多種多樣。圖5a提供 了多種樣式。 疋,、 圖5C所示的壓電元件3 95可透過焊盤3 92和398被 外部信號源3 60所啟動。使用來自信號源36〇的具有合 適波形的交流電信號(如典型正弦信號,在合適的頻率下) 時,壓電感測器陣列產生機械振動並可從壓電元件3 9 5傳 入介質中(圖5B中未標示),在介質中產生聲場。一部分 介質將從聲場感受聲場力。圖5 C所示的電磁單元陣列 415可被外部電流信號源45〇啟動,在介質中產生磁場。 介質中的磁場將對具有合適磁特性的部分施加磁場力。 已經容納有電磁單元陣列415和壓電元件3 9 5的基底 3 90表面被塗覆一薄層功能材料。這樣,當介質被引入包 括基底3 9 0的裝置時,介質與基底3 9 〇間接聯繫。介質 與基底3 5 5之間的間接聯繫是透過功能材料層及某些區域 的電磁單元或壓電元件建立的。功能材料層可將生物分子 固足在基底390上。在圖3A的描述中提供了功能材料層FIG. 5C illustrates a micro-electromagnetic unit array 415, which is fabricated on a fixed base 390 to make a piezoelectric disk element 395. The method of processing the piezoelectric element 395 is similar to the method of manufacturing a piezoelectric element described in FIG. 3C. The method of making electromagnetic = elements is similar to the method of making electromagnetic units described in Figs. 5A and 5B. These methods can be used in combination. Professionals in microfabrication and magnetic film processing can easily decide and use appropriate processing techniques to process piezoelectric elements and electromagnetic foundations 415 on a substrate. The piezoelectric element shown in FIG. 5C is disc-shaped, but it can be processed into other shapes according to the needs of the sound field. Similarly, the shape and structure of the electromagnetic unit 415 are also various. Figure 5a provides several styles. The piezoelectric element 3 95 shown in FIG. 5C can be activated by the external signal source 3 60 through the pads 3 92 and 398. When using an alternating current signal with a suitable waveform from a signal source 36 (such as a typical sinusoidal signal at a suitable frequency), the piezoelectric inductive sensor array generates mechanical vibrations and can be introduced into the medium from the piezoelectric element 3 9 (Not shown in Figure 5B), a sound field is generated in the medium. Part of the medium will experience the sound field force from the sound field. The electromagnetic unit array 415 shown in FIG. 5C can be activated by an external current signal source 45 to generate a magnetic field in the medium. The magnetic field in the medium will exert a magnetic field force on the part with the appropriate magnetic characteristics. The surface of the substrate 3 90 which has already received the electromagnetic unit array 415 and the piezoelectric element 3 9 5 is coated with a thin layer of functional material. Thus, when the medium is introduced into a device including the substrate 390, the medium is indirectly connected to the substrate 390. The indirect connection between the medium and the substrate 3 5 5 is established through layers of functional materials and electromagnetic units or piezoelectric elements in certain areas. The functional material layer can hold the biomolecules on the substrate 390. Functional material layer is provided in the description of FIG. 3A
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的一些例子。 圖6A — 6D是該發明中雙力口 ^ ^ ^ ^ Α 又力日日片的例子的示意圖,可產 力(常規介電電泳或行波介電電泳力)和磁場 力。顯示加工在基底3 5 5上的微電磁單元415陣 磁單71415的形狀及結構、陣列的佈局以及製作電 + 415的万法與圖5Α所描述的電磁單元陣列相似。 層=:::陣:?作完成後,在基底355上塗覆-薄 的人:g g層的材料可用二氧切、硝酸梦或別 的;丨電材料。薄層的厚户 h °知度了仗小於1微米到200微米。介 =層=合的厚度為^ 1G微米。說明得很清楚,介電 : 與,底355是分離的。介電層46〇的表面經磨光 ^ ’使得互成角度的電極陣列34()可加工在介電層46〇 亡電極340的結構、陣列的佈局及其製作的方法與圖μ 3C介紹的方法相似。製作完電極陣列㈣,需要保證 在基底355上的電磁單元415的烊盤44()與外部線路相 ^這可透過製作過程中保護焊盤州或採用合適的微影 t程而達到。 圖6A中電磁單元415可被與焊盤州相連的外部信號 源乂0產生的直流或交流電所啟動。電磁單元的附近將產 生兹每磁%可透過介電層460傳到與介電層46〇有直 接或間接聯繫的介f中(圖6A未標示)。介質中的磁場將 對具有特定磁特性料施加磁場力1 6a所示電極34〇 可被信,源386所產生的電信號(交流電,】赫茲到大於 1G赫茲)所啟動,在介質中產生不均衡電場。不均衡電場 593683 A7 B7 五、發明説明(Some examples. 6A-6D are schematic diagrams of an example of a double-liquid film in the present invention, ^ ^ ^ ^ Α and ri-ri film, productivity (conventional dielectrophoresis or traveling wave dielectrophoresis force) and magnetic field force. The micro electromagnetic unit 415 array shown on the substrate 3 5 5 The shape and structure of the magnetic single 71415, the layout of the array, and the method of making the electric + 415 are similar to the electromagnetic unit array described in FIG. 5A. Layer = ::: array :? After the operation is completed, the substrate 355 is coated with a thin layer: the material of the g layer can be dioxygen cut, nitric acid dream, or other materials; electrical materials. The thickness of the thin layer h ° is known to be less than 1 μm to 200 μm. The thickness of the interlayer = layer is ^ 1G microns. The explanation is very clear, the dielectric: and, the bottom 355 are separated. The surface of the dielectric layer 46 is polished, so that the electrode array 34 () at an angle to each other can be processed on the dielectric layer 46. The structure of the electrode 340, the layout of the array, and the method of making the same are described in FIG. 3C. The method is similar. After the fabrication of the electrode array, it is necessary to ensure that the disk 44 () of the electromagnetic unit 415 on the substrate 355 is compatible with the external circuit. This can be achieved by protecting the pad state during the production process or using a suitable lithography process. The electromagnetic unit 415 in FIG. 6A may be activated by a direct current or an alternating current generated by an external signal source 乂 0 connected to the pad state. In the vicinity of the electromagnetic unit, each magnetic% of the generated magnetic field can be transmitted through the dielectric layer 460 to the dielectric f directly or indirectly connected to the dielectric layer 46 (not shown in FIG. 6A). The magnetic field in the medium will exert a magnetic field force on the material with specific magnetic properties. The electrode 34 shown in FIG. 16a can be activated by the electrical signal (AC, [Hertz] to greater than 1G Hertz) generated by the source 386. Balance the electric field. Unbalanced electric field 593683 A7 B7 V. Description of the invention (
將對與介質介電特性不同的部分施加常規介電電;永为。 如圖6 A所示,介電層4 6 0的表面已被加工支援電極陣 列3 4 0,還可塗覆一薄層功能材料。這樣,當介質被引人 包括基底3 5 5和介電層460的裝置中,介質與介電層有 著間接聯繫。介質可透過功能材料層(和某些區域的電極 陣列340)與介電層460間接聯繫。功能材料層可用來在 介電層460的表面上固定某些生物分子。圖3A的描述中 提供了 一些功能層的例子。 圖6 B、6 C、6 D所示的多力晶片與圖6 A所示相似,只 是介電層4 6 0上的電極結構不一樣。 在圖6 B中,四相、線性、行波介電電極陣列4 8 〇製作 在4 6 0上。陣列4 8 0的佈局、結構與文獻中的描述相 似。如 Positioning and manipulation of cells and microparticles using miniaturized electric field traps and travelling waves95, G. Fuhr et al.5 Sensors and Materials,vol. 7, pages 131-146,1995 或 Large-area traveling-wave dielectrophoretic particle separator”, Morgan et al.? J. Micromech. Microeng. Volume 7? pages 65-70, 1997。雖然圖6B中未標示,電極陣列4 80有多層結構。 加工這些電極的微影術需要多層掩模。微加工的專業人士 可很容易的選擇合適的加工工藝來製作這樣的電極陣列 4 8 0。電極陣列4 8 0可透過焊盤4 8 6被信號源4 9 0產生 的四相信號(0,9 0,1 8 0和2 7 0度的正弦或近正弦波形) 所啟動’產生不均勻行波電場。這個場可對引入到此場的 部分施加常規或行波介電電泳力。 ______ -115- 本紙張尺度適用中國國家榡準(CNS) A4規格(2i〇x297公釐)Conventional dielectrics will be applied to parts that are different from the dielectric properties of the dielectric; As shown in FIG. 6A, the surface of the dielectric layer 460 has been processed to support the electrode array 340, and a thin layer of functional material may be coated. Thus, when a medium is introduced into a device including a substrate 3 5 and a dielectric layer 460, the medium is indirectly connected to the dielectric layer. The dielectric may be indirectly connected to the dielectric layer 460 through the functional material layer (and the electrode array 340 in some regions). The functional material layer may be used to immobilize certain biomolecules on the surface of the dielectric layer 460. Examples of functional layers are provided in the description of Figure 3A. The multiple force wafers shown in Figs. 6B, 6C, and 6D are similar to those shown in Fig. 6A, except that the electrode structure on the dielectric layer 460 is different. In FIG. 6B, a four-phase, linear, traveling-wave dielectric electrode array 4800 is fabricated on 460. The layout and structure of the array 480 is similar to the description in the literature. Such as Positioning and manipulation of cells and microparticles using miniaturized electric field traps and travelling waves95, G. Fuhr et al.5 Sensors and Materials, vol. 7, pages 131-146, 1995 or Large-area traveling-wave dielectrophoretic particle separator ", Morgan et al.? J. Micromech. Microeng. Volume 7? Pages 65-70, 1997. Although not shown in Figure 6B, the electrode array 4 80 has a multilayer structure. Lithography for processing these electrodes requires multiple masks. Micromachining Professionals can easily select the appropriate processing technology to make such an electrode array 4 8 0. The electrode array 4 8 0 can pass through the pad 4 8 6 and the four-phase signal (0, 9 0 generated by the signal source 4 9 0). Sine or near-sinusoidal waveform at 180 and 270 degrees) is activated to produce a non-uniform traveling wave electric field. This field can apply conventional or traveling wave dielectric electrophoretic force to the part introduced into this field. ______ -115- This paper size is applicable to China National Standard (CNS) A4 (2i × 297mm)
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在圖6C中,菱形電極6 10陣列製作在介電層460上。 如圖6C所示,所有的電極分成兩組,每一組電極連接在 起私極的製作可採用圖3 A所示的製作互成角度電極 的万法(如採用合適的掩模的微影方法)。菱形電極陣列 610可透過線路板612和618被信號發生器38〇產生的 電信號(通常1赫茲到i G赫茲的交流電)啟動,產生不均 勾電%。此電場可對引入該場的部分施加常規介電電泳 力。 圖6D中’一螺旋電極陣列63 0製作在介電層460上。 螺旋陣列有四個平行線性螺旋電極部分。電極的製作可採 用圖3 A所示的製作互成角度電極的方法(如採用合適的掩 模的微影術)。螺旋電極陣列6 3 〇可透過線路板6 3 6被信 號發生器490產生的四相信號(〇,9〇,180和270度的 正弦或近正弦波形)所啟動,產生不均勻行波電場。這個 場可對引入到此場的部分施加常規或行波介電電泳力。螺 旋電極的幾何形狀、原理及採用螺旋電極對細胞進行操作 在削述的文獻 Dielectrophoretic manipulation of cells with spiral electrodes,X-B· Wang et al.,Biophysical J·,ν〇ι· 72, pages 1887-1899,1997 中介紹。 圖6A、6B、6C、6D所示的多力晶片都可產生磁場(這 樣磁場力可作用於有某一磁特性的部分)和大量散佈的不 均勻電場(常規介電電泳力)。圖6 B和6 D所示晶片也可 產生行波電場(行波介電電泳力)。 圖7A和7B是本發明中兩力晶片的不意圖,此晶片可 ______ - 116- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)In FIG. 6C, an array of diamond electrodes 610 is formed on the dielectric layer 460. As shown in FIG. 6C, all electrodes are divided into two groups, and each group of electrodes is connected to the private electrode. The method of making mutual angle electrodes shown in FIG. 3A (such as lithography using a suitable mask) can be used. method). The diamond-shaped electrode array 610 can be activated by the electric signal (usually an alternating current of 1 Hz to i GHz) generated by the signal generator 38 through the circuit boards 612 and 618, and generate uneven hooking%. This electric field can apply a conventional dielectrophoretic force to the portion introduced into the field. A 'a spiral electrode array 63 0 is formed on the dielectric layer 460 in FIG. 6D. The spiral array has four parallel linear spiral electrode sections. The electrode can be fabricated by the method of making mutually angled electrodes as shown in Figure 3A (such as lithography using a suitable mask). The spiral electrode array 63 can be activated by the four-phase signals (sine or near-sinusoidal waveforms of 0, 90, 180, and 270 degrees) generated by the signal generator 490 through the circuit board 6 36 to generate an uneven traveling wave electric field. This field can apply a conventional or traveling-wave dielectrophoretic force to the part introduced into this field. The geometry and principle of spiral electrodes and the manipulation of cells with spiral electrodes are described in the document Dielectrophoretic manipulation of cells with spiral electrodes, XB · Wang et al., Biophysical J ·, ν〇ι · 72, pages 1887-1899, Introduced in 1997. The multi-force wafers shown in Figs. 6A, 6B, 6C, and 6D can all generate magnetic fields (such magnetic field forces can act on parts with a certain magnetic characteristic) and a large number of scattered non-uniform electric fields (conventional dielectrophoretic forces). The wafers shown in Figures 6B and 6D can also generate a traveling wave electric field (traveling wave electrophoretic force). Figures 7A and 7B are the intentions of the two-force wafer in the present invention. The wafer can be ______-116- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm)
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產生直流電場力和磁場力。圖7A表示製作在基底3 的微電磁單元陣列415。電磁單元陣列4 何上 =、陣列的佈局以及製作方法與…描述=單 疋陣列相似。當電磁單元陣Μ 415製作好後 ^還要塗覆-薄層介„ 46Ge介電層的材料可用-硬、硝料或別的介電材料。薄層的厚度可從小於 到2〇0微米。/電層較適合的厚度為^。微米 =460與基辰3 5 5是分離的。介電層46〇的表面經磨光 處理’使得:單點選通的電極陣歹“60可加工在介電層 460上。這裏的電極為矩形(尺寸在幾個微米,如長$微 米寬1微米到幾個毫米,如1 3亳米寬i亳米)。每個電 極可透過圖7A所示的焊盤662傳人的電信號來啟動。在 圖7A中,我們只顯示了一些電極與焊盤間的線路。製作 =極陣列的方法與圖3A和3C描述的方法相似。需要注 意製作完電極陣列後,需要確證焊盤44〇與外部線路相 通。這可透過製作過程中保護焊盤44〇或採用合適的微影 製程而達到。 ' 圖7A中電磁單元415可被透過焊盤440相連的外部信 號源4 5 0產生的直流或交流電所啟動。電磁單元的附近將 產生磁場。磁場可透過介電層4 6 0傳到與介電層4 6 〇有 直接或間接聯繫的介質中(圖7 A未標示)。介質中的磁場 將對具有特定磁特性部分施加磁場力。圖7 A所示電極陣 列660可透過焊盤662被信號源680所產生的電信號(通 常又泥電或低頻直流電’ 1赫茲到幾千赫茲)所啟動,在介 __ - 117- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Generates DC electric and magnetic force. FIG. 7A shows a micro-electromagnetic unit array 415 formed on the substrate 3. What is the electromagnetic unit array 4 ?, the layout of the array and the manufacturing method are similar to ... description = single array. After the electromagnetic unit array M 415 has been fabricated, it must be coated.-Thin layer dielectric. 46Ge dielectric material is available-hard, nitrate or other dielectric materials. The thickness of the thin layer can be less than 200 microns The suitable thickness of the electrical layer is ^. Micron = 460 is separated from the base 355. The surface of the dielectric layer 46 is polished to make the single-gated electrode array "60 processable" On the dielectric layer 460. The electrodes here are rectangular (dimensions in several micrometers, such as $ micrometers in length and 1 micrometer in width to several millimeters, such as 13 mm in width and 1 mm in width). Each electrode can be activated by an electric signal transmitted from the pad 662 shown in FIG. 7A. In Figure 7A, we only show some of the wiring between electrodes and pads. The method of making a pole array is similar to the method described in FIGS. 3A and 3C. It should be noted that after making the electrode array, it is necessary to confirm that the pad 44 is in communication with the external circuit. This can be achieved by protecting the pad 44 during the fabrication process or by using a suitable lithography process. 'In FIG. 7A, the electromagnetic unit 415 can be activated by a direct current or an alternating current generated by an external signal source 450 connected through a pad 440. A magnetic field is generated near the electromagnetic unit. The magnetic field can be transmitted through the dielectric layer 4 60 to a medium that is directly or indirectly connected to the dielectric layer 4 6 0 (not shown in Figure 7A). The magnetic field in the medium will exert a magnetic field force on the part with specific magnetic characteristics. The electrode array 660 shown in FIG. 7A can be activated by the electrical signal (usually mud power or low-frequency DC power '1 Hz to several kilohertz) generated by the signal source 680 through the pad 662. Applicable to China National Standard (CNS) A4 (210X297 mm)
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綠 593683 A7 B7 五、發明説明(115 ) 質中產生交流(或低頻直流)電場。該電場將對介質中帶電 的部分施加直流電場力。 如圖7 A所示,介電層4 6 0的表面已被加工支援電極陣 列6 6 0,還可塗覆一薄層功能材料。這樣,當介質被引入 包括基底355和介電層460的裝置中,介質與介電層 4 6 0有著間接聯繫。介質可透過功能材料層(和某些區域 的電極陣列6 6 0 )與介電層4 6 0間接聯繫。功能材料層可 用來在介電層460的表面上固定某些生物分子。圖3A的 描述中提供了 一些功能層的例子。 圖7B所示的多力晶片與圖7 A所示相似,只是介電層 460上的電極結構不一樣。在圖7B中,四相、線性、行 波介電電極陣列4 8 0製作在4 6 0上。電極陣列4 8 0的佈 局、結構及製作方法與圖6 B中的描述相似。電極陣列 4 8 0可被信號源7 0 0產生的相變換信號(通常為脈衝)透過 焊盤4 8 6所啟動,在介質中產生行波交流電場。這個場可 對引入到此場的帶電部分施加行波電泳(或行波直流電場) 力。帶電部分行波電泳運動的原理可參考copending U.S. Application “METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS” by Wang et al,filed on August 10, 2000. 圖8是本發明中兩力晶片的示意圖,此晶片可產生電泳 力和熱對流導致的機械力。圖8顯示了一個可單點選通的 陣列,電加熱元件7 5 0製作在固體基底7 2 0上。基底 720可由多種固體材料製作,如矽、玻璃、塑膠和陶瓷。 _-118-__ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 593683 A7 _ _ B7 五、發明説明(116 ) 基底720可有孔也可無孔。電加熱元件750可透過形成 細小的電導線來製作(如在一個長1 0微米寬5微米的相互 錯位式組合區域沈澱金作為導線)。根據特殊的要求,帶 有合適電阻器的加熱元件需要選用合適的材料和幾何結 構。所用電阻器的大小要根據每個加熱元件的要求和加在 電阻器上的電壓。加熱元件7 5 0的製作需使用標準的微加 工和微機械技術(如薄傳導膜加工技術)。很多微加工的例 子及其原理可參見 Handbook of Microlithography, Micromachining and Microfabrication, by Rai-Choudhury P. (Editor), Volume 2: Micromachining and microfabrication. SPIE Optical Engineering Press, Bellingham,Washington,USA (1997)。根據電加熱元件特殊的幾何結構,熟悉在基底和 薄膜上微加工的專業人士可以容易的選擇合適的材料和方 法製作加熱元件7 5 0。每個可單獨選通的加熱元件與基底 7 2 0上的板7 8 0相連接。板與加熱元件間的板7 8 0和線 路電極也可採用製作加熱元件陣列類似的方法製作。在圖 8A中’雖然所有的元件都與焊盤相連,我們只顯示了某 些加熱元件與焊盤間的電路。陣列上的加熱元件不必要可 單獨選通。根據特殊的要求,某些或所有的加熱元件可平 行或成系列連接,使得它們可一起被選通。信號源7 9 0產 .生的電信號可透過焊盤7 5 0施加於加熱元件7 5 0,由於元 件7 5 0的電阻所產生的熱量導致局部溫度的升高。 如圖8當加熱元件製作在基底720上後,一薄介電層 460塗覆在基底72〇上。介電層的材料可用二氧化矽、硝 __-119-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 -------B7 五、發明説明( ) 117 ; 酸石夕或別的介電材料。薄層的厚度可從小於1微米到200 微米:介電層較適合的厚度為i至1〇微米。介電層“Ο 與ί底j55是分離的。介電層46G的表面經磨光處理, 使付可單點選通的電極陣列81〇可加工在介電層 上。這裏的電極為六角形(尺寸在幾個微米,如側寬3微 米到幾個毫米,如側寬3亳米)。每個電極可透過圖8所 π的線路板8 12傳入的電信號來選通。在圖8中,我們只 顯示了一些電極與焊盤間的連接關係。製作電極陣列8 的方法與圖3 Α和3 C描述的互成角度電極陣列的製作方 法相似。需要注意製作完電極陣列8 1〇後,需要確保焊盤 7 80與外部線路相通。這可透過製作過程中保護焊盤〇 或採用合適的微影製程而達到。 圖8中的加熱元件7 5 〇可透過線路板7 8 〇被外部信號 源7 9 0產生的電信號(電壓或電流,直流或交流電)所激 發。附近的加熱元件將引起局部溫度的變化。此溫度的變 化將透過介電層傳入與介電層4 6 0有著直接或間接的聯繫 的基底中(圖8中未標示)。在介質中形成的溫度梯度將引 起介質的運動,在介質中形成一個速度場。此速度場將對 介質中放置或懸浮的部分施加機械力。圖8所示電極陣列 8 1 0可透過’j:于盤8 1 2被信號源6 8 0所產生的電信號(通常 交流電或低頻直流電,1赫茲到幾千赫茲)所啟動,在介質 中產生交流(或低頻直流)電場。該電場將對介質中帶電的 部分施加直流電場力或電泳力。 如圖8所示’介電層4 6 0的表面已被加工支援電極陣列 •120- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 593683 A7 B7 118 五、發明説明( 8 1 0,還可塗覆一薄層功能材料。這樣,當介質被引入包 2基底720和介電層46〇裝置中,介質與介電層46〇有 著間接聯繫。介質可透過功能材料層(和某些區域的電極 陣列660)與介電層46〇間接聯繫。功能材料層可用來在 介電層460的表面上固定某些生物分子。圖3八的描述中 提供了 一些功能層的例子。 圖9是本發明二力晶片的例子的示意圖,此晶片可產生 介電電泳力和熱介導的機械力。圖9中的多力晶片與圖8 中的相似,只是基底46〇上的電極陣列83〇的幾何結構 =同。在這裏,陣列83〇由可單獨選通的環形電極組成, 還有相隔幾微米到幾亳米的菱形電極。 圖9中ό勺加熱元件7 5 〇可透過焊盤7 8 〇被外部信號源 79〇 ^生的電信號(電壓或電流,直流或交流電)所激發。 附近的加熱元件將引起局部溫度的變化。此溫度的變化將 透過介電層傳人與介電層460有著直接或間接的聯繫的基 :中(圖8中未標示)。在介質中形成的溫度梯度將引起介 貝的運動纟介質中形 < 一個速度場。4匕速度場將對介質 中放置或懸浮的部分施加機械力。圖9所示電極陣列83〇 可透之岭j 8 3 2被信號源3 8 〇所產生的電信號(通常交流 電或低頻”電’ i赫兹到幾千赫兹)所啟動,在介質中產 生不均勻交流電場。該電場將對介質仲介電特性與介質不 同的部分施加常規介電電泳力。 θ圖/疋本發明-二力裝置的示意圖,該晶片可產生磁 琢力仃波介包電泳力和光場力。此裝置由流體池、二力 本紙痕尺度適财@目家標準(CNS「A4規 -121 - 119593683 五 、發明説明( =、塾片和光學晶片組成。可產生磁場力和行波介電電 的二力晶片製作在基底3 5 5上。β 10中的一力晶片 的結構和佈局以及製作方法輿圖⑼戶斤示的—= :。有著合適厚度的塾片850放置在二力晶片上。二; 這852。一光學晶片製作在由如玻璃這樣的合 =的基底870上。透鏡、蒒檢程式等光學元件陣列製 ==〇二光學元件880的幾何結構和成分由特 ^疋。先子晶片還需加工輸入和輸出埠872和 學晶片、整片和二力晶片被結合在-起組成一個 置。如可用膠粘合在一起。為了解釋清楚, 圖10中是分開的。 一 在 *在操作中’帶有被操作成分的介質透過輸人埠87 5通852巾。信號源45G產生的電信號施加於電磁單元 產生磁場’透過介電層46〇傳入管852中 中。磁場可對具有料磁特性的部分施加磁場力。作 9〇產生的電信號可施加於電極陣列48〇,在: 勾電場。此電場可對介質中的部分施加 波…冰力。外部光源產生的光信號9〇〇(圖 示)可施加於光學晶片上的光學元件m,在介質4: 光場。此光場可對介質中的部分施加光輻射力。產生 圖3A 一3B’圖5A至圖9所示的多力晶片相似,已 包含四相、線性電極陣列電極陣列46〇的表面還 : :功能材料。這樣’介質與介電層46〇間接聯擊 透過功能材料層(和某些區域的電極陣列48〇)血介^ 120 A7 B7 五、發明説明( 46〇間接聯繫。功能材料層可用來在介電層46〇的表面上 固定某些生物分子。圖3A的描述中提供了 —些功能層的 例子。 圖ha、11B、11c是本發明三力晶片的例子的示意 固此曰9片可產生聲力、磁場力和行波介電電泳力和/或 常規介電電泳力。 =11A所示的晶片由壓電基底3〇〇和基底3 5 5組成。 基底300的表面320和35〇都被塗覆薄導電層作為 笔梭廷極和壓乾基底材料與圖3B的壓電基底相似。電 f單元415的陣列製作在基底355上。電磁單元415的 幾何結構、陣列的佈局和製作電磁單元4丨5的方法與圖 6 B所不的電磁單元陣列相似。當電磁單元45陣列製作 後基底355塗覆-薄的介電層4 6〇。介電層的材料可用 氧化矽硝酸碎或別的介電材料。薄層的厚度可從小於 1微米到200微米。介電層較適合的厚度為1至1〇微 為了解釋清楚’介電層46〇與基底355是分離的。 1私層4 6 0的表面經磨光處理,使得四相線性行波電極陣 列920可加工在介電層46〇上。電極的結構,陣列 的佈局,及製作電極陣列的方法與圖6B描述的製作方法 相,°除了11電極與圖6B所示導向9G I。需要注意製 作疋私極陣列8 1 0後,需要確保焊盤7 8 〇與外部線路相 ^這可透過製作過程中保護焊盤4 4 0或採用合適的微影 製程而達到。 雖然基底3 00、基底3 5 5 (和基底上的介電層46〇)在圖 本紙張尺度通用中國國家標準(CNS) A4規格(210X^97公釐) --- 593683 A7 B7 五、發明説明( 11A中是分開的,但實際上它們結合成一個晶片,如同 3B所示二力晶片。 回 使用圖11A中的晶片,信號源36〇發出的電信號施加 於壓電基底3 00產生聲波場,與放置於或引入介電層46〇 表面的介質結合。聲場對介質中的部分施加聲場力。曰 信號源450產生的電信號(如電流)可施加於基底3 5 5上 的電磁元件,產生磁場,穿過介電層46〇傳到介質中。嗜 磁場可對具有某種磁特性的部分施加磁場力。信號源4 = 發出的電信號可施加於電極陣列9 2 〇 ,在介質中產生不均 勻行波電場。該電場可對介質中的部分施加常規和行波介 電電泳力。 、圖11B所示的晶片包含壓電基底3〇〇。壓電基底兩面均 塗覆了導電薄層,作為電極。電極與壓電基底材料與圖 5A所示的壓電基底相似。電磁單元陣列415製作在基底 3 00上。電磁單元415的幾何結構 '陣列的你局以及電磁 =元,列的製作方法與目5A所描述的在壓電基底上製作 電磁單元陣列的方法相似。電磁單元415製作好後,基底 355上需塗覆一層介電^ 46〇。介電層的材料可用二氧化 石夕、硝酸石夕或別的介電材料。介電層的厚度可從小於!微 米到20G微米。介電層較適合的厚度為i i 1()微米。為 了解釋/目疋’介廷層460與基底355是分離的。介電層 4 6 0的表面經磨光處理,使得行波介電電泳電極陣列9 $ 〇 可加工在介電^ 460上。電極陣列9 5 0包含一套同心圓 型電極’每四個環形電極連接在一起。製作此電極陣列的 :297公釐) 122 五、發明説明( =二":述的製作方法相似。例如,電極陣列需要 轉列95〇。需要注意製作完電二 咖作電 焊盤440與外部線路相 二::確保 44〇或採用合適的微影製程而達;^作過私中保護焊盤 使用圖1 1B中的晶古 過焊盤43 5以及矣…0發出的電信號可透 聲波場,與放置於或引Λ20施加於壓電基底300產生 場對介質中的部“力=介'層460表面的介質結合。聲 _ 邵刀她加聲場力。信號源450產生的兩户 於:磁广”,產生磁場,透過介電層丄:: 信2 ϋ 對具有某種轉㈣㈣«場力。 發出的電信號可施加於電極陣列9 5 〇,在+斩 規t生行波電場。該電場可對介質中的部分施加; 規和仃波介電電泳力。 圖lie所示的晶片包含基纟39〇和基底355 件陣列3 95製作在基底39G上。壓電元件3 95的幾二結 構、陣列的佈局與圖3 C所描述的在壓電陣列的方法相 似。,電磁單元陣列415和四相線性行波介電電極陣列96〇 都製作在基底3 5 5上。電磁單元4 15的幾何結構、陣列 的佈局以及電磁單元陣列的製作方法與圖5 Α所描述的在 壓電基底上製作電磁單元陣列的方法相似。電極陣列96〇 與每個電磁單元相連,其中包括多導電層。電極陣列96〇 被用來沿著電極陣列指示的方向如圖1〇中箭頭962、 96 5、96 8的方向輸運物質。輸運力是行波介電電泳力。 -125- 本纸張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 物質在電極分支的交又處可被控制(如圖llc中交又點 9 6 6)。雖然此處未寫明,名稱為“用於微粒操作與微粒導 向的裝置及其使用方法,,(王小波等,2 〇 〇 〇年9月2 7日遞 交)的中國專利申請可結合於此。精於微加工的專業人士 可各易的選擇合適的加工工藝和方法製作電磁單元陣列 415和電極陣列96G。電磁單元415製作好後,基底355 上需塗覆-層介電層偏。介電層的材料可用二氧切、 硝酸碎或別的絕緣材料。薄層的厚度可從小於i微米到 200微米。介電層較適合的厚度為1至1()微米。為了說 明清楚,介電層460與基底3 5 5是分離的。介電層46〇 的表面經磨光處理,使得行波介電電泳電極陣列95〇可加 工在:電| 460上。電極陣列95〇包含一套同心圓型電 極,每四個環形電極連接在一_。製作此電極p車列的方法 」、0 6 B泰述的製作方法相似。例如,電極陣列需要多導 電層。如果用到微影技術m多層掩模來製作電極陣 列950。需要注意製作完電極陣列95〇後,需要確保坪盤 440與外部線路相通。這可透過製作過程中保護焊盤^ 或採用合適的微影製程而達到。 使用圖1 ic所示的晶片,信號源36〇發出的電信號施 加於壓電元㈣列3 95,在與放置於或引入基底⑸表面 6^貝中產生聲波場。聲場對介質中的部分施加聲場力。 仏號源450產生的電信號可施加於基底上的電磁元 件,41 5,在介質中產生磁場。該磁場可對具有某種磁特性 的邵分施加磁場力。信號源49〇發出的電信號可施加於電 本紙張尺度適用中g國豕標準(CNS) Μ規格(灿〉〈297公爱) 124 五、發明説明( 極陣列950’在介質中產生不均勾行波電場。該電場可舞 介質中的部分施加常規和行波介電電泳力。注意電極陣列 960是用來透過行波介電電泳力在不同的電磁單元間轉運 物質(如細胞、微粒)。物質可沿著電極陣列指示的方向如 圖lie中箭頭962、965、968的方向被轉運。物質在泰 極分支的交叉處可被控制(如圖llc中交叉點966)。' 與前述多力晶片相似,,圖11a、11b、uc所示的三 力晶片可被塗覆一薄層功能材料。功能材料層可用來在晶 〇表面上固定某些生物分子β _ 3A的描述中提供了一 些功能層的例子。 口在上面的例子中’用來產生各種不同的力的結構元件多 是透過各種微組裝和/或微加工方法製作在合適的基底 士道然而’這些結構元件要能結合到基底上。例如,細小 的導電金屬線可作為電極產生電場。這些金屬線可透過各Green 593683 A7 B7 5. Description of the invention (115) An alternating current (or low frequency direct current) electric field is generated in the mass. This electric field will apply a DC electric field force to the charged part of the medium. As shown in FIG. 7A, the surface of the dielectric layer 460 has been processed to support the electrode array 660, and a thin layer of functional material may be coated. Thus, when a medium is introduced into a device including a substrate 355 and a dielectric layer 460, the medium has an indirect relationship with the dielectric layer 460. The dielectric can be indirectly connected to the dielectric layer 460 through the functional material layer (and the electrode array 660 in some areas). The functional material layer may be used to immobilize certain biomolecules on the surface of the dielectric layer 460. Examples of functional layers are provided in the description of Figure 3A. The multi-force wafer shown in FIG. 7B is similar to that shown in FIG. 7A, except that the electrode structure on the dielectric layer 460 is different. In Fig. 7B, a four-phase, linear, traveling-wave dielectric electrode array 480 is fabricated on 460. The layout, structure and manufacturing method of the electrode array 480 are similar to those described in FIG. 6B. The electrode array 4 800 can be activated by a phase-converted signal (usually a pulse) generated by the signal source 700 through the pad 4 8 6 to generate a traveling wave AC electric field in the medium. This field can apply a traveling wave electrophoresis (or traveling wave DC electric field) force to the charged part introduced into this field. The principle of the traveling electrophoretic motion of the charged part can be referred to the copending US Application "METHODS FOR MANIPULATING MOIETIES IN MICROFLUIDIC SYSTEMS" by Wang et al, filed on August 10, 2000. Figure 8 is a schematic diagram of a two-force wafer in the present invention. Electrophoretic forces and mechanical forces caused by thermal convection. Figure 8 shows a single-point strobe array. Electrical heating elements 750 are fabricated on a solid substrate 720. The substrate 720 can be made of a variety of solid materials, such as silicon, glass, plastic, and ceramic. _-118 -__ This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 593683 A7 _ _ B7 5. Description of the invention (116) The base 720 may or may not have holes. The electric heating element 750 can be made by forming a small electric wire (for example, depositing gold as a wire in a mutually misaligned combination area with a length of 10 micrometers and a width of 5 micrometers). According to special requirements, heating elements with suitable resistors need to use the right materials and geometries. The size of the resistor used depends on the requirements of each heating element and the voltage applied to the resistor. The heating element 750 is manufactured using standard micromachining and micromechanical techniques (such as thin conductive film processing technology). Many examples of micromachining and their principles can be found in Handbook of Microlithography, Micromachining and Microfabrication, by Rai-Choudhury P. (Editor), Volume 2: Micromachining and microfabrication. SPIE Optical Engineering Press, Bellingham, Washington, USA (1997). According to the special geometric structure of electric heating elements, professionals who are familiar with micromachining on substrates and films can easily select the appropriate materials and methods for making heating elements 750. Each individually selectable heating element is connected to a plate 7 80 on a substrate 7 2 0. The plate 780 and the line electrode between the plate and the heating element can also be made in a similar way to the array of heating elements. In Fig. 8A ', although all the components are connected to the pads, we only show the circuits between some heating elements and the pads. The heating elements on the array need not be individually gated. Depending on special requirements, some or all of the heating elements can be connected in parallel or in series so that they can be gated together. The electrical signal generated by the signal source 790 can be applied to the heating element 750 through the pad 750. The local temperature rise is caused by the heat generated by the resistance of the component 750. As shown in FIG. 8, after the heating element is formed on the substrate 720, a thin dielectric layer 460 is coated on the substrate 72. The material of the dielectric layer can be silicon dioxide and nitrate. __119-_ This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 593683 A7 ------- B7 V. Description of the invention () 117; acid stone or other dielectric materials. The thickness of the thin layer can be from less than 1 micrometer to 200 micrometers: a more suitable thickness of the dielectric layer is i to 10 micrometers. The dielectric layer "0" is separated from the bottom layer j55. The surface of the dielectric layer 46G is polished, so that a single-point gated electrode array 81o can be processed on the dielectric layer. The electrodes here are hexagonal (The size is several micrometers, such as 3 micrometers to a few millimeters, such as 3mm wide.) Each electrode can be gated through the electrical signal transmitted from the circuit board 8 12 shown in Fig. 8. In the figure In 8, we only show the connection relationship between some electrodes and pads. The method of making the electrode array 8 is similar to the method of making the mutually angled electrode array described in Figs. 3A and 3C. Note that the electrode array 8 is finished. 〇 After that, it is necessary to ensure that the pad 7 80 is in communication with the external circuit. This can be achieved by protecting the pad 0 during the production process or using a suitable lithography process. The heating element 7 5 in FIG. 8 can be transmitted through the circuit board 7 8 〇 Excited by an electrical signal (voltage or current, DC or AC) from an external signal source 790. A nearby heating element will cause a local temperature change. This temperature change will be transmitted through the dielectric layer to the dielectric layer 4 6 0 in the base with direct or indirect connections (Not shown in Figure 8). The temperature gradient formed in the medium will cause the medium to move, forming a velocity field in the medium. This velocity field will apply mechanical force to the part placed or suspended in the medium. The electrode array shown in Figure 8 8 1 0 can be activated through 'j: on disk 8 1 2 by the electrical signal generated by the signal source 6 8 0 (usually AC or low-frequency DC, 1 Hz to several kilohertz) to generate AC (or low-frequency DC) in the medium. ) Electric field. This electric field will apply a DC electric field force or an electrophoretic force to the charged part of the medium. As shown in Figure 8, the surface of the dielectric layer 4 6 0 has been processed to support the electrode array. • 120- This paper size applies to Chinese national standards (CNS) A4 specification (210X297 mm) 593683 A7 B7 118 5. Description of the invention (8 1 0, can also be coated with a thin layer of functional material. In this way, when the medium is introduced into the package 2 substrate 720 and the dielectric layer 46 0 device In the medium, the medium has an indirect connection with the dielectric layer 46. The medium can be indirectly connected with the dielectric layer 46 through the functional material layer (and the electrode array 660 in some areas). The functional material layer can be used on the surface of the dielectric layer 460 Fixed on Biomolecules. Some examples of functional layers are provided in the description of Figure 38. Figure 9 is a schematic diagram of an example of a two-force wafer of the present invention, which can generate a dielectrophoretic force and a thermally mediated mechanical force. The Duoli chip is similar to that in FIG. 8 except that the geometry of the electrode array 83 on the substrate 46 is the same. Here, the array 83 is composed of ring electrodes that can be individually gated, and there are several micrometers to several millimeters apart. M diamond-shaped electrode. In Figure 9, the heating element 750 can be excited by an electrical signal (voltage or current, DC or AC) generated by an external signal source 79 〇 through the pad 7 800. The nearby heating element will Cause local temperature changes. This change in temperature will pass through the dielectric layer to the substrate that has a direct or indirect connection with the dielectric layer 460 (not labeled in Figure 8). The temperature gradient formed in the medium will cause the motion of the medium 形 a velocity field in the medium. The 4-knife velocity field will exert mechanical force on the part placed or suspended in the medium. The electrode array 83 shown in Figure 9 is transparent. The 8-8 ridge is activated by an electrical signal (usually alternating current or low-frequency "electricity" i Hertz to several kilohertz) generated by the signal source 3 800. Uniform AC electric field. This electric field will apply a conventional dielectric electrophoretic force to the medium with different dielectric characteristics from the medium. Θ diagram / 疋 This invention-a schematic diagram of a two-force device. The chip can generate magnetic force, wave-dielectric electrophoretic force, and light. Field force. This device is composed of a fluid pool, a second force, a paper mark, and a suitable scale @ 目 家 标准 (CNS "A4 Regulations-121-119593683 V. Description of the invention (=, cymbals, and optical chips. Can generate magnetic field force and traveling wave medium The electric and electronic two-chip wafer is fabricated on the substrate 3 5 5. The structure and layout of the one-chip wafer in β 10 and the manufacturing method map shown by the user — =: The cymbal 850 with a suitable thickness is placed on the two-chip wafer. II. This 852. An optical chip is manufactured on a composite substrate 870 such as glass. Arrays of optical elements such as lenses, inspection programs, etc. The geometric structure and composition of the optical element 880 are specially formulated. The preform wafer also needs to be processed. The input and output ports 872 and the academic chip, the whole chip and the second force chip are combined together to form a single unit. For example, they can be glued together. For the sake of clarity, they are separated in Figure 10. One in * in operation ' The medium with the manipulated component passes through the input port 87 5 through 852 towels. The electrical signal generated by the signal source 45G is applied to the electromagnetic unit to generate a magnetic field, which is introduced into the tube 852 through the dielectric layer 46. The magnetic field can A magnetic field force is applied to the characteristic part. The electrical signal generated by 90 can be applied to the electrode array 48o at: Hook an electric field. This electric field can apply a wave ... ice force to a part in the medium. An optical signal generated by an external light source 900 (Illustration) The optical element m that can be applied to the optical wafer, in the medium 4: light field. This light field can apply a light radiating force to a portion of the medium. The results are shown in Figures 3A-3B ', Figures 5A to 9 Duoli wafers are similar. The surface that already contains a four-phase, linear electrode array electrode array 46〇 also includes: functional materials. In this way, the 'dielectric and dielectric layer 46 ’indirectly strike through the functional material layer (and the electrode array 48 in some areas). 〇) Blood mediation 120 A7 B7 V. Hair Description (46 ° indirect connection. Functional material layers can be used to immobilize certain biomolecules on the surface of the dielectric layer 46 °. Examples of functional layers are provided in the description of Figure 3A. Figures ha, 11B, 11c are the invention An example of a three-force wafer is shown in FIG. 9, which can generate acoustic, magnetic, and traveling-wave dielectrophoretic forces and / or conventional dielectrophoretic forces. The wafer shown in FIG. 11A consists of a piezoelectric substrate 300 and a substrate. 3 5 5 composition. The surfaces 320 and 350 of the substrate 300 are coated with a thin conductive layer as a pensotine pole and the press-dried substrate material is similar to the piezoelectric substrate of FIG. 3B. An array of electric f-units 415 is fabricated on the substrate 355 . The geometric structure of the electromagnetic unit 415, the layout of the array, and the method of manufacturing the electromagnetic unit 415 are similar to the electromagnetic unit array shown in FIG. 6B. When the array of electromagnetic units 45 is fabricated, the substrate 355 is coated with a thin dielectric layer 460. The dielectric layer can be made of silicon oxide or nitric acid or other dielectric materials. The thickness of the thin layer can be from less than 1 micron to 200 microns. The dielectric layer preferably has a thickness of 1 to 10 micrometers. To explain clearly, the dielectric layer 460 is separated from the substrate 355. The surface of the private layer 460 is polished so that the four-phase linear traveling wave electrode array 920 can be processed on the dielectric layer 460. The structure of the electrodes, the layout of the array, and the method of fabricating the electrode array are the same as the fabrication method described in FIG. 6B, except for the 11 electrodes and the 9G I shown in FIG. 6B. It should be noted that after manufacturing the private electrode array 8 1 0, it is necessary to ensure that the pad 7 8 0 is in phase with the external circuit. This can be achieved by protecting the pad 4 4 0 during the production process or using a suitable lithography process. Although the substrate 3 00, the substrate 3 5 5 (and the dielectric layer 460 on the substrate) are in the paper size, the general Chinese National Standard (CNS) A4 specification (210X ^ 97 mm)-593683 A7 B7 V. Invention Note (11A is separate, but in fact they are combined into a wafer, like the two-force wafer shown in 3B. Using the wafer in FIG. 11A, the electrical signal from the signal source 36 is applied to the piezoelectric substrate 3 00 to generate a sound wave. The field is combined with the medium placed or introduced on the surface of the dielectric layer 46. The sound field exerts a sound field force on a portion of the medium. The electrical signal (such as a current) generated by the signal source 450 can be applied to the substrate 3 5 5 The electromagnetic element generates a magnetic field and passes through the dielectric layer 46 to the medium. A psychrophilic field can exert a magnetic field force on a part having a certain magnetic characteristic. The signal source 4 = the electric signal emitted can be applied to the electrode array 9 2 〇, A non-uniform traveling wave electric field is generated in the medium. This electric field can apply conventional and traveling wave dielectrophoretic forces to a portion of the medium. The wafer shown in FIG. 11B contains a piezoelectric substrate 300. Both sides of the piezoelectric substrate are coated A thin conductive layer is used as an electrode. The electrical base material is similar to the piezoelectric substrate shown in Fig. 5A. The electromagnetic unit array 415 is fabricated on the substrate 300. The geometric structure of the electromagnetic unit 415 is the array of your array and the electromagnetic = element, and the method of making the column is as described in head 5A. The method of fabricating an electromagnetic unit array on a piezoelectric substrate is similar. After the electromagnetic unit 415 is fabricated, a layer of dielectric ^ 46 ° needs to be coated on the substrate 355. The material of the dielectric layer can be SiO2, nitrate, or other materials. Dielectric material. The thickness of the dielectric layer can be from less than 20 micrometers to 20G micrometers. The more suitable thickness of the dielectric layer is ii (1) micrometers. For the sake of explanation, the dielectric layer 460 is separated from the substrate 355. The surface of the dielectric layer 4 60 is polished so that the traveling wave dielectric electrophoresis electrode array 9 $ 〇 can be processed on the dielectric ^ 460. The electrode array 9 50 includes a set of concentric circular electrodes' each four rings The electrodes are connected together. This electrode array is made: 297 mm. 122 V. Description of the invention (= 二 ": The production method described is similar. For example, the electrode array needs to be shifted to 95 °. It is necessary to pay attention to the production of the second coffee. Electrical pad 440 is in phase with external circuit :: Ensure that 44 ° or the appropriate lithographic process is used; ^ Used as a protection pad for private use. The electrical signals from 古… 0 in Figure 1 1B and 矣… 0 can be transmitted through the acoustic wave field, and Placed on or introduced Λ20 and applied to the piezoelectric substrate 300 to generate a field to the medium in the medium "force = medium 'layer 460 surface of the medium combination. Acoustic _ Shao Dao She added acoustic field force. The two households generated by the signal source 450 are: magnetic Wide ", generating a magnetic field through the dielectric layer 丄 :: letter 2 ϋ pair has some kind of transition« field force. The electrical signal sent can be applied to the electrode array 9 50 to generate a traveling wave electric field at + chop gauge t. The electric field can be applied to a portion of the medium; the gauge and chirped wave electrophoretic forces. The wafer shown in FIG. Lie includes a base 390 and a base 355 element array 3 95 fabricated on a base 39G. The structure of the piezoelectric element 395 and the layout of the array are similar to the method in the piezoelectric array described in FIG. 3C. Both the electromagnetic unit array 415 and the four-phase linear traveling wave dielectric electrode array 96 are fabricated on the substrate 355. The geometric structure of the electromagnetic unit 415, the layout of the array, and the manufacturing method of the electromagnetic unit array are similar to the method of manufacturing the electromagnetic unit array on the piezoelectric substrate described in FIG. 5A. An electrode array 96 is connected to each electromagnetic unit and includes a multi-conductive layer. The electrode array 96o is used to transport substances along the directions indicated by the electrode array as indicated by arrows 962, 965, and 968 in FIG. The transport force is a traveling wave dielectrophoretic force. -125- This paper size is in accordance with China National Standard (CNS) A4 specification (210X297mm). The material can be controlled at the intersection of the electrode branches (see intersection point 9 6 6 in Figure 11c). Although not specified here, the Chinese patent application entitled "Device for Particle Operation and Particle Guidance and Method of Use, (Wang Xiaobo et al., Filed on September 27, 2000) may be incorporated herein. Professionals who are proficient in micromachining can easily choose the appropriate processing technology and method to make the electromagnetic unit array 415 and the electrode array 96G. After the electromagnetic unit 415 is fabricated, the substrate 355 needs to be coated with a dielectric layer. Dielectric The material of the layer can be dioxygen cutting, nitric acid crushing, or other insulating materials. The thickness of the thin layer can be from less than i microns to 200 microns. The more suitable thickness of the dielectric layer is 1 to 1 () microns. For clarity, the dielectric The layer 460 is separated from the substrate 355. The surface of the dielectric layer 46 is polished so that the traveling wave dielectric electrophoretic electrode array 95 can be processed on: electricity | 460. The electrode array 95 includes a set of concentric Round electrodes are connected to every four ring electrodes. The method of making this electrode p train is similar to that of 0 6 B Thai. For example, electrode arrays require multiple conductive layers. If the lithography technique is used, a multi-layer mask is used to form the electrode array 950. It should be noted that after the electrode array 95 is fabricated, it is necessary to ensure that the plate 440 is in communication with external circuits. This can be achieved by protecting the pads during the manufacturing process ^ or by using a suitable lithography process. Using the chip shown in FIG. 1 ic, the electrical signal from the signal source 36 is applied to the piezoelectric element array 3 95, and an acoustic wave field is generated in the substrate 6 placed on or introduced into the substrate surface. The sound field exerts a sound field force on a portion of the medium. The electric signal generated by the 仏 source 450 can be applied to the electromagnetic elements on the substrate, 415, and a magnetic field is generated in the medium. This magnetic field can exert a magnetic field force on a Shaofen with certain magnetic properties. The electrical signal from the signal source 49 can be applied to the electrical paper size. The national standard (CNS) M specification (Can> <297 public love) 124 5. Description of the invention (Polar array 950 'produces unevenness in the medium Crossing wave electric field. Part of this electric field can be applied with conventional and traveling wave dielectrophoretic forces. Note that the electrode array 960 is used to transport substances (such as cells, particles, etc.) between different electromagnetic units through the traveling wave dielectrophoretic force. ). The substance can be transported in the direction indicated by the electrode array, as shown by the arrows 962, 965, 968 in Figure lie. The substance can be controlled at the intersection of the Thai pole branch (see intersection 966 in Figure 11c). Multi-force wafers are similar. The three-force wafers shown in Figures 11a, 11b, and uc can be coated with a thin layer of functional material. The functional material layer can be used to immobilize certain biomolecules β_3A on the surface of the crystal. Provided in the description Here are some examples of functional layers. In the above example, 'the structural elements used to generate various forces are mostly fabricated on various substrates through various micro-assembly and / or micro-machining methods. However, these structural elements must be able to bind To the substrate. For example, the conductive fine metal wire as an electrode may generate an electric field. These metal wires each permeable
Li::底結合,如黏合。在另-個例子中,電磁單元 _^面_子的目的是為了說明問題’不是為了限制這〈 1的範圍。上述還有各種可能的變化。各種變化包括 ==子’而不是限於這些例子,製作晶片的基底材料 ^生_電極結構、產生磁場的電磁單元的結構、產> 聲㈣壓電元件、產生光場的光學元件的 ; 梯度的加熱或冷卻元件等等。上述例子的各種更改和: 目的是發明僅受附加中請專利範圍限制。 ^Li :: bottom binding, such as adhesion. In another example, the purpose of the electromagnetic unit _ ^ face_ is to explain the problem ', not to limit the scope of this <1. There are various possible changes mentioned above. Various changes include == sub- 'rather than being limited to these examples, the substrate material used to make the wafer, the electrode structure, the structure of the electromagnetic unit that generates the magnetic field, the production of the acoustic piezo element, and the optical element that generates the light field; gradients Heating or cooling elements and much more. Various modifications and above examples: The purpose is that the invention is limited only by the scope of additional patents. ^
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| Application Number | Priority Date | Filing Date | Title |
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| US67902400A | 2000-10-04 | 2000-10-04 |
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| TW593683B true TW593683B (en) | 2004-06-21 |
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| TWI823341B (en) * | 2021-04-14 | 2023-11-21 | 南韓商Lg化學股份有限公司 | Novel method for preparing sphingosine-1-phosphate receptor agonist |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI823341B (en) * | 2021-04-14 | 2023-11-21 | 南韓商Lg化學股份有限公司 | Novel method for preparing sphingosine-1-phosphate receptor agonist |
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