TW595272B - Plasma producing system - Google Patents

Plasma producing system Download PDF

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Publication number
TW595272B
TW595272B TW92119620A TW92119620A TW595272B TW 595272 B TW595272 B TW 595272B TW 92119620 A TW92119620 A TW 92119620A TW 92119620 A TW92119620 A TW 92119620A TW 595272 B TW595272 B TW 595272B
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Taiwan
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power supply
electrode
micro
materials
metal
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TW92119620A
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Chinese (zh)
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Chau-Nan Hong
Yoou-Bin Guo
Liang-Chun Wang
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Creating Nano Technologies Inc
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Abstract

This invention relates to plasma producing system. High frequency supplier is connected to hollow negative pole. A metal layer is applied to two sides of insulation material of hollow negative pole. The hollow negative pole has micro-holes for being passed by air. By above system, there could be stable plasma for cleaning plating and eroding. Above system wouldn't over erode and have no pollution improving high efficiency.

Description

595272 __ 案號 92119620 ___ 年月 你 π:__ 五、發明說明(1) 【發明所屬之技術領域】595272 __ Case No. 92119620 ___ Year You π: __ V. Description of the invention (1) [Technical field to which the invention belongs]

本發明係有關於一種電漿產生系統,即一種電漿產生 源設計,以高頻電源供應器與微中空陰極〔micro-hol low -cathode〕極設計的電漿裝置及方法,尤指一種可在一般 常壓下產生大面積均勻冷電漿的裝置及方法。其可在一般 壓力下產生電漿,不需真空設備,縮短處理時間,均勻性 極佳。應用到電敷表面清潔上,不會對欲清潔物有過度侵 蝕〔over etching〕傷害產生;離子能量適中,不會對欲 清潔物造成污染;因而可增大製程視窗〔process windQW )。應用到電漿鑛膜方面,適中的離子能量不會因離子義 擊效應〔ion bombardment〕對基板造成傷害〔wafer damage〕。應用到電漿蝕刻上,由於高活化物濃度,包括 離子、激發態分子及自由基粒子等,則對蝕刻速^有大幅 L无W技術】 按,電漿裝置係供用來在氣相中產生具有 子,以提供清潔待清潔物〔即所謂的清 ·、本 沉積薄膜材料〔即所▲田的供 、 leaning〕、 J π ^即所明的鍍膜,deposition〕、并嫩η 表面化學成分〔即所神的矣品於挤Ρ τιοη」、改變固體 — ification〕及:改質’ SUrface 方丨+ K J及選擇性反應去除固體材料〔即所神从 刻,etchlng〕。例如: 竹L即所明的蝕 釦瑗2 i積體電路矽晶片在元件封裝製程會因製鞀伙 而此污染物會導致德择的二構裝用基板上附著污染物, 致後續的封裝過程中,打金線或封裳時 595272 9211QR90The invention relates to a plasma generation system, that is, a plasma generation source design, a plasma device and method designed with a high-frequency power supply and a micro-hol low-cathode pole, and more particularly, a plasma device and method Device and method for generating large-area uniform cold plasma under normal atmospheric pressure. It can generate plasma under normal pressure, does not need vacuum equipment, shortens processing time, and has excellent uniformity. When applied to the surface cleaning, there will be no over-etching damage to the object to be cleaned; moderate ion energy will not cause pollution to the object to be cleaned; therefore, the process window (process windQW) can be increased. When applied to plasma plasma membranes, moderate ion energy will not cause substrate damage due to ion bombardment. Applied to plasma etching, due to the high concentration of activated materials, including ions, excited molecules and free radical particles, etc., there is a large L without W technology for the etching rate] Press, the plasma device is used to generate in the gas phase It has a substrate to provide the object to be cleaned [that is, the so-called clear, the deposited film material [that is, the supply of the field, leaning], J π ^ that is the coating, the composition], and tender η surface chemical composition [ That is, the god's fake product is squeezed, and the solid is changed—ification] and: modified 'SUrface square + KJ and selective reaction to remove solid materials [ie God from the moment, etchlng]. For example: Bamboo L is the etched 2i integrated circuit silicon wafer. In the component packaging process, the contaminants may be caused by the manufacturing process. This contaminant may cause contaminants to adhere to the two-substrate substrates, which will cause subsequent packaging. In the process, when gold thread or seal is hit 595272 9211QR90

JL 曰 五、發明說明(2) f氧樹脂附著不良,嚴重降低良率, 基板上的污染物清除。 貝將此矽晶片或 (2)在固體表面進行鍍膜或表面改質, 半導體製程,需要在6至8吋的晶圓上製造數=/、吊見於 ’利用電漿將反應物氣體活π,先使晶圓表:個小元件 清潔以增加鍍膜與基材的附著力,再通入;;電漿處理 石夕院〔SiHO混合氧氣經電槳反應在基人應物如 〔Si02〕。 何表面形成氧化矽 、(3 )在固體表面進行蝕刻,則需通入盘 f體::列如欲蝕刻矽#,則可以通入含敦類氣體: 如此。亂就〔F2〕或四氟化碳〔CF4〕,經電漿分解成 的f :基與離子,該粒子與矽材進行化學反應形成氣態的 四亂矽〔SiF4〕擴散到氣體帶走。電漿製程在半導體工 業界已是不可或缺的技術。 m目前普遍使用的電漿裝置,其產生的方式是在真空的 j哀境下進行放電,常採用的有電容式電漿〔Capaci ty_ coupled Plasma〕,其電漿產生的原理是在電極(丄工) 加一直流〔DC〕電源(1 2 )或高週波〔Radi〇 Frequency ’ RF〕電源(1 3 ) ’ 此電極(1 1 )與另一 接地電極(14)〔通常為真空腔體(1)的腔體壁〕產 生電容式放電〔如第一、二圖〕’電子在負極暗區 (Cathode Sheath)獲得能量加逮碰撞中性氣體分子而將 之解離〔如e-+Ar-->Ar++2e-〕’被解離出來的電子又被加 速,解離更多中性氣體分子,形成電漿。電漿的濃度與電 595272 _案號92119620_ 年月曰 修正__ 五、發明說明(3) 子的產生及其存活時間〔L i f e t i m e〕有關,此電容式電 漿電子由負極以直線加速的方式往正極加速,電子很容易 撞擊到正極而消失’因此電容式電聚其電漿密度低。 工業上另有用感應麵合式電漿〔Inductively -Coupled-Plasma,ICP〕,基板插置於支撐架内,支撐架 則至於載體上’ 5玄載體上方设置天線,在天線上施加^一南 週波〔Radio Freciuency,RF〕電源,待天線感應出電漿 之後,電漿藉由擴散的方式到達基材表面;感應耦合電漿 適合在極低壓力下產生電漿,電漿密度高、帶電粒子不會 直接轟擊基板,但是電漿容易集中在天線附近,均勻性不 佳。工業上也有採用中空陰極(1 5)的原理來產生低壓 電漿〔如第二圖〕,以此作為電漿裝置的設計,低壓下產 生中空陰極效應並無法並聯操作,單一個中空陰極放電會 k成電聚集中在中空陰極附近,均勻性是一大缺點。 目前亦有在常壓下產生電漿的裝置,其產生的方式是 藉由施加高電流電源於兩金屬材料,在陰極電極上放電區 域會縮小成一個小點,稱做弧斑〔Sp〇t〕,藉由動量及電 場影響,弧斑會在電極上移動,此稱電弧放電〔Arc discharge〕。亦有製.成管狀電極方式,通以氣體形成火 焰狀放電,稱管狀火炬放電〔tubular t〇rch discharge 〕,以上放電皆是利用加熱方式提供高能電子以維持電漿 屬於熱平衡狀態〔Thermal Equilibrium〕或局部平衡 〔Local Thermal Equilibrium〕的放電,氣體溫度通常 高達攝氏數萬度。JL. V. Description of the invention (2) f. Poor adhesion of oxygen resin, severely reduced yield, and removal of contaminants on the substrate. This silicon wafer or (2) is coated or surface modified on a solid surface. For the semiconductor process, the number of wafers to be manufactured on a 6 to 8 inch wafer is equal to /. First make the wafer table: clean a small component to increase the adhesion between the coating and the substrate, and then pass in ;; plasma treatment Shi Xiyuan [SiHO mixed oxygen reacts to the basic object such as [Si02] through the electric paddle. (3) For the formation of silicon oxide on the surface, and (3) for etching on a solid surface, you need to pass the disk f :: If you want to etch silicon #, you can pass gas containing: The chaos [F2] or carbon tetrafluoride [CF4] is decomposed into f: radicals and ions by plasma, and the particles react chemically with the silicon material to form gaseous chaos silicon [SiF4], which diffuses into the gas and is carried away. Plasma manufacturing has become an indispensable technology in the semiconductor industry. m At present, the commonly used plasma device is produced by discharging in a vacuum environment. Capaci ty_coupled Plasma is often used. The principle of plasma generation is in the electrode (丄Power) (DC) power supply (1 2) or high frequency [Radi〇 Frequency 'RF] power supply (1 3)' This electrode (1 1) and another ground electrode (14) [usually a vacuum cavity ( 1) The cavity wall] generates a capacitive discharge [as shown in the first and second figures] 'The electrons gain energy in the negative electrode dark area (Cathode Sheath) and catch and collide with neutral gas molecules to dissociate it [such as e- + Ar-- > Ar ++ 2e-] 'The dissociated electrons are accelerated again, dissociating more neutral gas molecules, and forming a plasma. The concentration of the plasma is related to electricity 595272 _ Case No. 92119620_ year and month amended __ V. Description of the invention (3) The generation of the daughter and its survival time [L ifetime], this capacitive plasma electrons are accelerated linearly by the negative electrode Accelerating toward the positive electrode, the electrons can easily hit the positive electrode and disappear. Therefore, the capacitance density of the capacitor type is low. In the industry, there is another Inductively-Coupled-Plasma (ICP). The substrate is inserted into the support frame, and the support frame is on the carrier. An antenna is placed above the carrier, and a south frequency is applied to the antenna. Radio Freciuency (RF) power supply. After the antenna induces the plasma, the plasma reaches the surface of the substrate by diffusion. Inductively coupled plasma is suitable for generating plasma under extremely low pressure. The plasma density is high and charged particles will not The substrate is directly bombarded, but the plasma is easily concentrated near the antenna, and the uniformity is not good. In the industry, the principle of hollow cathode (15) is also used to generate low-voltage plasma [as shown in the second figure]. As a design of the plasma device, the hollow cathode effect generated at low voltage cannot be operated in parallel. A single hollow cathode discharges It will be near the hollow cathode in the electrical aggregation, and homogeneity is a major disadvantage. At present, there are also devices that generate plasma under normal pressure. The method of generating it is to apply a high current power to two metal materials. The discharge area on the cathode electrode will be reduced to a small point, which is called an arc spot [Sp〇t ], Under the influence of momentum and electric field, the arc spot will move on the electrode, this is called arc discharge [Arc discharge]. There is also a system. The method of forming a tubular electrode, forming a flame-like discharge through a gas, is called a tubular torch discharge. The above discharges use heating to provide high-energy electrons to maintain the plasma in a thermal equilibrium state. [Thermal Equilibrium] Or Local Thermal Equilibrium discharge, the gas temperature is usually as high as tens of thousands of degrees Celsius.

595272595272

又,目前亦有常壓下產生冷電漿的裝置,其產生的方 式是藉由施加高電壓電源於兩電極,兩電極只要其中一個 或者兩個皆需要覆盍上一片絕緣材料’如玻璃或氧化銘板 ’當通過高電壓電源,在電極之間會形成許多的小放電, 稱為微放電通道〔Microdischarge channel〕,電毁即在 此產生。為了維持高電場,此電漿裝置的電極間距其實非 常窄小,約在2-10 mm的範圍,而且電漿均勻度差,對於 鍍膜、蝕刻等應用並不適合。 、 又,利用中空陰極產生常壓電漿在國外一些研究團體 才剛起步,藉由將中空陰極孔洞縮小到數十個微米〔从瓜 〕可以讓電漿均勻的產生在孔洞中,不過其缺點為中空, 極孔徑太小容易造成鍍膜的沉積而將孔洞塞住,而且:^ 的研究皆採用直流電源〔d c ρ 〇 w e r〕及脈衝式電源 ; 〔pulse power〕,不利於電漿穩定性、電漿並聯操作及 大面積化放電,因此目前大部分的研究停留在利用其 光線上。 ’、 生 【發明内容】 本發明係有關於一種電漿產生系統,主要是將交潘、 高頻供應器與微中空陰極之電極連接,利用該微中$ ^ $ 之絕緣材料的兩面附有一層金屬導電層,並設立滿佈二矣 小孔洞供氣體通過,使之在常壓下可以產生具有古&旧 巧n均勻性 且穩定之電漿,且形成大面積之均勻冷電漿,成為一種。 作為待清潔物之清潔、鍍膜、表面改質及蝕刻等加工操可 ,可以達到不會過度侵蝕,且離子能量適中不會造呆作 k战污染In addition, there are currently devices for generating cold plasma under normal pressure. The method of generating them is to apply high voltage power to the two electrodes. As long as one or both of the two electrodes need to be covered with an insulating material such as glass or When the oxidation nameplate is passed through a high-voltage power supply, many small discharges are formed between the electrodes, called microdischarge channels, and electrical destruction occurs here. In order to maintain a high electric field, the electrode spacing of this plasma device is actually very narrow, in the range of about 2-10 mm, and the plasma uniformity is poor, which is not suitable for applications such as coating and etching. Also, the use of hollow cathodes to generate normal piezoelectric plasma has only just begun in some foreign research groups. By reducing the hollow cathode holes to tens of microns [from melon], plasma can be uniformly generated in the holes, but its disadvantages It is hollow, and the hole diameter is too small, which may cause the deposition of the coating and plug the holes. In addition, the research of ^ uses a direct current power supply (dc ρ 〇wer) and a pulsed power supply; [pulse power], which is not conducive to the stability of the plasma, Plasma is operated in parallel and discharge is performed in a large area, so most of the current researches focus on using its light. ', Health [Content of the invention] The present invention relates to a plasma generation system, which is mainly connected to the cross-pan, high-frequency power supply and the electrode of the micro-hollow cathode, the two sides of the insulating material using the micro- $ ^ $ are attached A metal conductive layer, and set up small holes filled with dioxin for gas to pass, so that under normal pressure, it can produce a plasma with uniformity and stability, and form a uniform cold plasma with a large area. Become a kind. As processing operations such as cleaning, coating, surface modification, and etching of the object to be cleaned, it can be achieved without excessive erosion, and the ion energy is moderate, and it will not cause pollution.

595272595272

、可加大製程視窗且不會對基板造成傷害,且能有效提高 餘刻速率的電漿產生系統。 【實施方式】 為使本發明所運用之技術手段與達成功效易於明瞭茲 配合圖示及圖號說明如下: 首先睛參閱第三圖所示,本發明之常壓冷電漿之電漿 產生糸統(2 )包括:A plasma generation system that can increase the process window without causing damage to the substrate and can effectively increase the remaining rate. [Embodiment] In order to make the technical means and effect achieved by the present invention easy to understand, the illustrations and figure numbers are described as follows: First, referring to the third figure, the plasma of the atmospheric cold plasma of the present invention generates 糸System (2) includes:

_恶上、下電極(2l)、(22)為各自獨立產生電漿 ίί,可:選擇只操作一邊電極或者兩邊皆產生電聚,以 、處理單邊或兩邊基板(3)。由於本發明並不需真空 ^及抽氣裝置,因此待處理基板可以以連續方式投入電 毁區域處理,請參第三圖所示。 八,兩個電極(21) 、 (22),如第四〜二十七圖所 =i =金屬板或金屬網或絕緣物製作,可藉由高頻電源供 應益(2 3 )提供高頻電源。 =或多個高頻電源供應器(23),如第四〜二十七 弦、* 。兩頻電源之頻率在1kHz —100MHz間,波形可為正 。波〔sin wave〕、方波、三角波或前述各種波形之組合 磁% ’供對應組設於電極外側之兩磁鐵(2 4 )所 =’以提供相對於電極(21)、( 徑向 的磁场’如第二十八、二十九圖所示。 a脾’本發明之電漿操作方法步驟如下: •將待處理物表面的灰塵顆粒事先去除乾淨。_Evil upper and lower electrodes (2l) and (22) generate plasma independently. You can choose to operate only one electrode or both sides to generate electricity to process single-sided or two-sided substrates (3). Since the present invention does not require a vacuum device and an air extraction device, the substrate to be processed can be continuously processed in an electrically damaged area, as shown in the third figure. Eight, two electrodes (21), (22), as shown in the fourth to twenty-seventh figure = i = made of metal plate or metal mesh or insulation, high frequency can be provided by high frequency power supply (2 3) power supply. = Or multiple high-frequency power supplies (23), such as fourth to twenty-seven strings, *. The frequency of the two-frequency power supply is between 1kHz and 100MHz, and the waveform can be positive. [Sin wave], square wave, triangle wave or the combination of the aforementioned various waveforms% 'for the corresponding set of two magnets (2 4) located outside the electrode =' to provide a radial magnetic field relative to the electrode (21), ( 'As shown in Figures 28 and 29. a spleen' The plasma operating method steps of the present invention are as follows: • Remove the dust particles on the surface of the object to be treated in advance.

595272 案號 92119620 年 月 曰 修正 應皆}行 供面1進 。源雙2物 。。成電或C理 。流極完與面極處 場氣電即設單電待 磁整予作擺物制面 。的調源工的理控雙 域向以電的}處由或 區徑,率理2待經面 極或體頻處2對以單 電向氣定物C明可對 的軸作特理、發,, 漿極工出處}本示域 電電的輸待1 ,所區 生於當以對2整圖的 產對適,,C調三漿 入相入器後極的第電 伸生通應間電率如生 物產域供時計頻。產 (6)理鐵區源當設 > 理} 明處磁應電適由3處2 |待用反動一經2行2 '#於利對啟經 C進C 五bcdef 器可、 子被目 2拓的達小兩 分下要 ct}為微的 體壓主 、電2 ,出} 氣常的 }將2切作2 撞在計 1式C密製1 碰能設 2方、係先2 去漿是 C接}關}{ 子電浆 極連lj l料 電得電 電}2場2材 速使生 在3C電C緣 加了產 置2極'^^極絕 場為定 位 <電}電在 電,穩 的器以2之用 用團, 生應所2將利 利浆生 產供,C,, 是電產 漿源域、示源 生離效 電電區}所電 產解有 ,用理1圖極 漿分的 中利處2四陰 電部勻 明再漿C第空 於出均 發,電極如中 由造而本部個電,之 。製積 在内整與的洞 理以面。 }到法目孔 處,大標 2展擺此的595272 Case No. 92119620 January, said amendments should all go forward. Source double 2 things. . Into electricity or C. At the end of the current pole and at the surface pole, the field gas power is set to be a single magnet to be used as the surface of the pendulum. The control and control of the dual-direction direction of the power source worker is based on the electric power or the area diameter, and the reason is that 2 pairs of surface poles or body frequencies are to be passed. The source of the electric power is shown in Figure 1. The electric power transmission of the electric power shown in the figure is based on the matching of the output of the entire picture. The power rate is as the time frequency of the biological production area. (6) Rieyuan District Sources > Management} The magnetic response of the bright place is from 3 places 2 | Standby reaction once the 2 rows 2 '#Yu Li to Kai Jing C into C 5 bcdef device can be 2 extension of the small two points to ct} is the body pressure of the main, electricity 2, out of the air} cut 2 into 2 and hit the type 1 C system 1 can be set to 2 sides, first 2 Desizing is C connection} Off} {sub-plasma pole connected lj l material to get electricity} 2 fields and 2 material speeds to produce 2 poles on the 3C electric C edge to produce 2 poles ^^ pole absolute field for positioning < electricity } Electricity in electricity, the stable device is used in 2 groups, and the bioreactor 2 supplies the profit and plasma production, C, is the source area of the electric power generation and the power generation zone of the electric power generation. Use the diagram in Figure 1 to divide the middle part of the poles. 2 The four negative electrical parts are evenly distributed, and then the C part is distributed to the second part. The electrodes are made from the middle part, and the head part is made of electricity. The productive insights are integrated. } Go to the eye of the law, the big standard 2 shows

1氣的 電 2供極 極1 gas electricity 2 supply poles

第11頁 595272 _案號92119620_年月日__ 五、發明說明(7) 1 1 )縮小到1 mm以内〔約0 · 5 - 0 · 3 mm〕,可以在常壓下 產生均勻的高密度電漿,而且採用交流式電源,整個電極 (21)是由兩片具有相對孔洞(211)的金屬導電層 (213) 、 ( 2 1 4 )作為電極並以相對應孔洞的絕緣 材料(212)隔開,金屬導電層(213) 、 (214 )的電極可利用市售的金屬沖孔網、鍍膜或網版印刷等方 式附著在絕緣材料(2 1 2 )上。絕緣材料(2 1 2 )選 擇耐火性材料,可以延長電極壽命,例如氧化鋁、氮化硼 等陶瓷類材料。 傳統的中空陰極(1 5 )放電採用直流電源以達到持 續解離氣體功用,中空陰極(1 5)内部會形成高解離率 高電漿密度的電漿,然而直流電源容易造成不穩定的電弧 放電現象,進而造成待處理物或電極的破壞,使其應用上 有許多限制,尤其是在高壓、常壓的環境下,因而本案利 用交流式微中空陰極(2)避免形成不穩定放電,如第四 、五圖所示〔之後所有電極和電源供應器之連接皆可採取 此種接法,即電源供應器(2 3 )之一端接兩電極(2 1 )、(2 ),另一端接地線〕,將交流電源高電位電極並 接於兩電極(21) 、(22),所以兩電極(21)、 (2 2 )保持等電位狀態,又由於交流電場是正負交換出 現,當兩電極(2 1 )、( 2 2 )皆為負電位時,形成中 空陰極電漿有提高解離率的功效,當兩電極(21)、( 2 2 )皆為正電位時,將吸引電子及將離子推往電極(2 1 ) 、 ( 2 2 )外側,有助於電漿產生在處理區域。Page 11 595272 _Case No. 92119620_Year Month__ V. Description of the invention (7) 1 1) Reduced to less than 1 mm [about 0 · 5-0 · 3 mm], which can produce a uniform height under normal pressure Density plasma, and using AC power, the entire electrode (21) is made of two pieces of metal conductive layer (213) and (2 1 4) with opposite holes (211) as electrodes and the corresponding insulating material (212) ), The electrodes of the metal conductive layers (213), (214) can be attached to the insulating material (2 1 2) by using a commercially available metal punching net, coating or screen printing. The insulating material (2 1 2) is made of refractory material, which can prolong the electrode life, such as ceramic materials such as alumina and boron nitride. The traditional hollow cathode (1 5) discharge uses a DC power supply to achieve the function of continuous dissociation gas. The hollow cathode (15) will form a plasma with a high dissociation rate and a high plasma density. However, the DC power supply is prone to cause unstable arc discharge. , Which in turn causes damage to the object to be processed or the electrode, which has many restrictions on its application, especially in high pressure and normal pressure environments. Therefore, in this case, an alternating-current micro-hollow cathode (2) is used to avoid the formation of unstable discharges. As shown in the five pictures [the connection between all the electrodes and the power supply can be adopted in this way, that is, one of the power supply (2 3) is terminated with two electrodes (2 1), (2), and the other end is grounded], The high-potential electrode of the AC power supply is connected in parallel to the two electrodes (21) and (22), so the two electrodes (21) and (2 2) maintain an equipotential state, and because the AC electric field is a positive-negative exchange, when the two electrodes (2 1 ) And (2 2) are negative potentials, forming a hollow cathode plasma has the effect of increasing the dissociation rate. When both electrodes (21) and (2 2) are positive potentials, they will attract electrons and push ions to the electrodes. (twenty one ) , ( 2 2) The outside helps plasma to be generated in the processing area.

第12頁 595272Page 12 595272

如第四 ’電漿產生 場的控制來 四圖所描述 2 2 ),選 供應器,如 流、交流或 覆蓋一層絕 電源供應器 材料(2 5 電荷導掉, 位〔Floati ’而且隨電 即會造成電 形成局部的 電極,當一 二陰極面密 為正,負責 在電極中間 瞬間,原本 子往電極中 度中空陰極 為了達 漿密度,可 圖所示,電 的最佳位置 調整。如第 的微中空陰 擇接地如第 第六圖所示 脈衝式電源 緣材料(2 必須選擇交 )的屏蔽作 其與電漿接 ng Potenti 漿密度而變 子的震盪, 高解離電漿 邊的金屬網 度電漿,此 將中空陰極 及支撐架内 的中空陰極 間推,如此 電漿穩定形 到兩邊電極 以選擇如圖 極(2 1 ) 可藉由電源 五圖所示, 極裝置,右 五圖所示, ’以上之第 供應器。當 5 )〔如第 流或脈衝式 用。由於絕 觸將會在表 a 1〕,由電 化’溝槽内 其實與中空 。將相對電 電極為負電 一瞬間,另 形成的高密 形成有效的 電極轉成正 正負電位來 成在電極之 (21)、 第八圖示的 、(2 2 ) 供應器的頻 左邊電極( 邊為一片金 亦可接第二 二台電源可 金屬的電極 七圖所示〕 電源供應器 緣材料(2 面形成一層 漿原理可知 這層絕緣物 陰極的效果 場分別接於 位時即在該 一邊的金屬 度電子往該 碰撞產生電 電位剛好將 回交換,最 間。 (2 3 )產 接線方式, 為兩片金屬 率及氣體流 2 1 )為第 屬的電極( 台交流電源 以選擇直 (2 2 )上 ,貝|J第二台 以跨越絕緣 5 )無法將 浮動電荷電 此電位為負 上的負電位 是一樣的, 點兩金屬網 電極形成中 網電極相對 電極拉,而 漿;在下一 電漿中的離 後使得高密 生相對稱電 利用兩台高As described in the fourth 'plasma generation field control as described in the fourth figure 2 2), choose a supplier, such as current, AC, or cover a layer of insulating power supply material (2 5 charge is conducted away, bit [Floati' and immediately after the electricity It will cause electricity to form a local electrode. When the surface density of one or two cathodes is positive, it is responsible for the moment in the middle of the electrode. The hollow cathode that was originally intended to reach the electrode in order to achieve the density of the slurry can be shown in the figure. The optimal position of the electricity is adjusted. The micro-hollow hollow cathode is grounded as shown in the sixth figure. The shield of the pulsed power edge material (2 must be selected) is used as the vibration of the transformer connected to the plasma density and the density of the plasma. The plasma is pushed between the hollow cathode and the hollow cathode in the support frame, so that the plasma is stably shaped on both sides of the electrode to choose the pole (2 1). The pole device can be shown by the fifth figure of the power supply, and the fifth figure of the right As shown, 'The above number of suppliers. When 5) [such as the current or pulse type. Since the absolute contact will be shown in Table a 1], the inside of the electrochemical 'trench is actually hollow. For a moment, the opposite electric electrode is negatively charged, and the other high-density forming effective electrode is turned into positive, positive and negative potentials to form the electrode on the left side of the electrode (21), the eighth picture, and (2 2) of the electrode. Gold can also be connected to the second and second metal electrodes. Figure 7] Power supply edge material (the principle of forming a layer of slurry on both sides shows that the effect field of this layer of insulation cathode is connected to the metal on the side when it is in place. The electric potential generated by the degree of electrons towards this collision will be exchanged back to the nearest interval. (2 3) The production wiring method is two pieces of metal and gas flow 2 1) as the first electrode (a AC power source to choose a straight (2 2 ), Be | J the second to cross the insulation 5) can not be floating charge electricity this potential is negative on the negative potential is the same, point two metal mesh electrodes to form the mesh electrode opposite the electrode pull, and slurry; in the next power The separation in the slurry makes Gaomi Symmetric Electricity use two high

第13頁 595272 — 案號卯119620 _年月日 佟1 五、發明說明(9) 〜 - 頻電源供應器(2 3 )個別控制或一台高頻電源供靡哭( 2 3 )並聯操作,可以使常壓微中空陰極電漿對稱產生, 對於同時處理兩面基材有利。 常壓微中空陰極亦可用溝槽的形式來產生,如第九圖 所示,將如第四圖所示的孔洞(2 1 1)改成溝槽(2 1 5 ) ’對於電極(2 1 )、( 2 2 )的製備可以^大簡化 之。其接電源的方式則可以採用如第九〜十二圖的方式, 其理由如第五〜八圖所描述。 第二種改良方式為利用中空陰極原理加入錐狀金屬( 216)之材料,如第十三圖所示,錐狀金屬(2ΐβ) 的場發射效應〔field emission effect〕可以使電子容 易脫離錐狀金屬(2 16)尖端,進而降低啟動電壓,當 錐狀章屬(2 1 6)通入負電場,電子脫離尖端而且被相 對應的中空陽極吸引,在交流電場的下一瞬間,中空陽極 變成中空陰極而造成電子在中空陰極間來回震盪,使得電 子有效碰撞氣體分子機率提升;電漿解離率大幅提高;穩 定電漿及擴充電漿操作的範圍。除了降低啟動電壓,而且 兼具中空陰極提高電漿解離率的功用,可謂一舉兩得。將 此原理加入上述配合電源接法方式以獲得均勻大面積放 電,如圖第十四〜十七圖。同理,亦可以利用植入柱狀或 树枝狀微結構(2 1 7 ),如第十八圖所示,微結構例如 场發射效果極佳的奈米碳管〔Carb〇n nanotube〕或奈米 柱狀結構〔nano-r〇d〕,植入電極中作為發射電子的元件 ’配合微中空陰極電極及高頻電源接線方式以達到大面積Page 13 595272 — Case No. 119620 _Year Month and Day 佟 1 V. Description of the invention (9) ~-Frequency power supply (2 3) individually controlled or a high frequency power supply for crying (2 3) parallel operation, It can make the atmospheric pressure micro-hollow cathode plasma to be symmetrical, which is beneficial for the simultaneous processing of both sides of the substrate. Atmospheric pressure micro hollow cathodes can also be produced in the form of grooves, as shown in the ninth figure, the holes (2 1 1) shown in the fourth figure are changed into grooves (2 1 5) 'for the electrode (2 1 The preparation of) and (2 2) can be greatly simplified. The way to connect the power supply can be the way as shown in Figures 9 to 12 and the reason is as described in Figures 5 to 8. The second improvement method is to use the hollow cathode principle to add a cone-shaped metal (216). As shown in Figure 13, the field emission effect of the cone-shaped metal (2ΐβ) can make the electrons easily escape from the cone. The tip of the metal (2 16) further reduces the starting voltage. When the cone-shaped chapter (2 1 6) passes in a negative electric field, the electrons leave the tip and are attracted by the corresponding hollow anode. At the next instant of the AC electric field, the hollow anode becomes Hollow cathodes cause electrons to oscillate back and forth between the hollow cathodes, which increases the probability of electrons effectively colliding with gas molecules; the plasma dissociation rate is greatly increased; the plasma is stabilized and the range of plasma operation is expanded. In addition to lowering the start-up voltage, it also has the function of increasing the plasma dissociation rate of the hollow cathode. Add this principle to the above-mentioned method of matching power connection to obtain uniform large-area discharge, as shown in Figures 14-17. In the same way, it is also possible to use implanted columnar or dendritic microstructures (2 1 7). As shown in Figure 18, microstructures such as carbon nanotubes or carbon nanotubes with excellent field emission effects M-pillar structure [nano-r〇d], implanted in the electrode as a component that emits electrons, cooperates with a micro-hollow cathode electrode and high-frequency power wiring to achieve a large area

595272 案號_ 92】〗qr9〇 (10) 的產生,如第 種改良方式是 取代一般電極 ,如第二十三 間鏤空的部分 8 )、( 2 1 的製備及壽命 十四〜二十七 ,添加相對於 圖。由於電子 到勞倫茲力〔 線旋轉,如第 的磁力線抓住 度,另一方面 離子,離子因 •不會被磁力線 漿中之移動速 ,因此添加磁 更大之有效清 之電漿行為, ,可避免電子 於電漿電位較 方向的磁場, 因此所產生之 正 十二圖所示。 網(2 1 8 )、( 2 1 9 中空陰極可以在常壓產生 金屬網(2 1 8 ) 、 (2 一個中空陰極,整個金屬 一組微中空陰極陣列組, 利。不同電極與電源接法 原理如上述。 方向之磁場,如第二十八 且質量很小,電子在磁場 force〕F = q · νχ β作用而 。所以電漿中的電子會被 可提高電子的存活率,提 被磁場限制住,只剩下質 ’所以受勞倫茲力影響不 因離子之質量比電子大很 ’所以幾乎沒有屏蔽電磁 較大厚度的皮膚深層,亦 而磁場方向的不同,也會 二十八、二十九圖所示方 在電極上,因此所產生之 相反的’若施加垂直於 到磁力線之引導而損失在 為電子流失而留下大量的 第15頁 595272 SS92U9620 曰 修正 五、發明說明(11) 正電荷,因此電漿 生較高之離子撞擊 同的電漿狀態,分 本發明之特徵 空陰極電極結構。 結構之電漿密度較 也較高。同時,由 可大幅延長電極壽 使電漿之啟動電壓 可增加。以高頻之 計,可避免如DC電 放電造成電極損壞 電漿穩定性;同時 低,提高電漿密度 以下為本發明 1 ·本發明之 如第三Η--三 電壓(V) -電流( 電位會因 能量,故 別來處理 在於結合 與其他一 南,且氣 於氣體流 命;由於 降低,電 交流電源 源供應器 ’需使用 亦容易放 而提高幾百伏特,所以可以產 就磁場方向的設計,可導致不 不同難易程度的待處理基板。 高頻之交流電源供應器與微中 般電極結構相比,微中空陰極 體可完全流過電漿區,解離率 過電極具有冷卻電極之效果, 電極之正負極距離可以縮短, 襞之穩定性提升,電極壽命亦 供應器結合微中空陰極電極設 或pulse電源供應器容易尖端 限流電阻之限制,因此可提升 大電極面積,使啟動電壓降 各個裝置之實驗步驟及結果·· 實施例(一): 十二圖所示,本發明之實施例(一)之 1 )關係圖及電漿產生情形〔上視圖〕 高定本 RF3有穩· 以Η即、2 C壓勻 氣電均 高 關」 ¾度 微壓電 在電即 加出亦 外看, 器可生 應圖產 供此流 源由電 電 氦 為 體 氣 上 極 極 陰 空 中 低 在 定 穩 分 十 係 常 tr 也 漿 電 時 同 例 較 比 之 明 發595272 Case No. 92] 〖qr9〇 (10), such as the first improvement method is to replace the general electrode, such as the twenty-three hollowed out part 8), (2 1 preparation and life of fourteen to twenty-seven , Relative to the graph. Due to the rotation of electrons to the Lorentz force line, such as the magnetic field line grasping degree, on the other hand, ions, ions will not be moved by the speed of the magnetic line, so adding a larger magnet is effective The behavior of the clear plasma, can avoid the magnetic field of electrons in the direction of the plasma potential, so the positive twelve figures are generated. Nets (2 1 8), (2 1 9) Hollow cathodes can generate metal nets at normal pressure. (2 1 8), (2 A hollow cathode, a group of micro-hollow cathode arrays of the entire metal, Lei. The principle of connecting different electrodes to the power source is as described above. The magnetic field in the direction, such as the twenty-eighth and the mass is very small, the electrons are in The magnetic field force] F = q · νχ β. So the electrons in the plasma will be improved by the electron survival rate, which is limited by the magnetic field, leaving only the mass', so it is not affected by the mass of ions due to the Lorentz force. Bigger than electronics The deep layers of the skin that have almost no electromagnetic shielding thickness, and the direction of the magnetic field is different, will also be on the electrode as shown in Figures 28 and 29. Therefore, the opposite 'if applied perpendicular to the line of magnetic force Guidance and loss are left in large quantities for the loss of electrons. Page 15 595272 SS92U9620 Modification V. Explanation of the invention (11) Positive charge, so the higher plasma ion hits the same plasma state, which is characteristic of the invention. Cathode electrode structure. The plasma density of the structure is relatively high. At the same time, the starting voltage of the plasma can be increased by greatly prolonging the electrode life. At high frequencies, it can avoid damage to the stability of the electrode caused by DC electrical discharge. At the same time, it is low to increase the plasma density. The following is the present invention. The third aspect of the present invention is the three voltages (V)-current (the potential will be due to energy, so do not deal with it in combination with the other one, and anger at Gas flow; due to the reduction, the electric AC power source's' needs to be used and is easy to put on, raising several hundred volts, so it can produce a design in the direction of the magnetic field, which can lead to different The substrate to be processed is relatively easy. Compared with the micro-electrode structure of the high-frequency AC power supply, the micro-hollow cathode body can completely flow through the plasma area. The dissociation rate of the electrode has the effect of cooling the electrode, and the distance between the positive and negative electrodes of the electrode. It can be shortened, the stability of 襞 is improved, and the life of the electrode is also combined with the micro-hollow cathode electrode design or the pulse power supply. It is easy to limit the current-limiting resistance of the tip. Therefore, it can increase the large electrode area and make the starting voltage drop. Results ·· Example (1): As shown in the twelfth figure, the embodiment (a) of the present invention 1) The relationship diagram and the plasma generation situation [Top view] The high-definition version RF3 is stable. That is, 2 C pressure Uniform gas and electricity are all high-pass. ”¾ degree micro-piezoelectricity is added and seen when the electricity is generated. The device can produce products for this current source. The electricity source is helium as the body gas. Compared with Mingfa

第 頁 595272 案號 92119620 年 月 曰 修正 五、發明說明(12) 如第三十三圖所示以DC電源供應器及Pulse電源供應 器外加在中空陰極電極上之電壓(V)-電流(I )關係圖 :由此圖可看出電漿容易產生尖端放電,電壓-電流關係 不穩定。 3 ·本發明之實施例(二): 如第三十四圖所示,可知本發明之實施例(二)之電 漿產生情形可看出電漿非常均勻、穩定。 4 ·本發明之部份相關研究發表於如附件一之期刑上 〇Page 595272 Case No. 92119620 Amendment V. Description of the invention (12) The voltage (V) -current (I) applied to the hollow cathode electrode by the DC power supply and Pulse power supply as shown in Figure 33 ) Relation diagram: From this diagram, it can be seen that the plasma is prone to tip discharge, and the voltage-current relationship is unstable. 3. Example (II) of the present invention: As shown in Figure 34, it can be seen that the plasma generation of Example (II) of the present invention shows that the plasma is very uniform and stable. 4 · Some related studies of the present invention are published in the sentence of imprisonment as shown in Annex 1.

綜上所述,本發明實施例確能達到所預期之使用功效 ,又其所揭露之具體構造,不僅未曾見諸於同類產品中, 亦未曾公開於申請前,誠已完全符合專利法之規定與要求 ,爰依法提出發明專利之申請,懇請惠予審查,並賜准專 利,則實感德便。In summary, the embodiments of the present invention can indeed achieve the expected use effect, and the specific structure disclosed has not only been found in similar products, nor has it been disclosed before the application. It has fully complied with the provisions of the Patent Law. In accordance with the law, the application for an invention patent was submitted in accordance with the law, and it is imperative that it be examined and the patent granted.

第17頁 595272 _案號 92119620_年月日_修正 圖式簡單說明 式 簡 單 說 明 ] 第 一 圖 習 用 低 壓 電容 式 電 漿 ri-n. θ又 備圖 第 二 圖 習 用 低 壓 中空 陰 極 電 漿 設備圖 第 圖 本 發 明 的 裝置 示 意 圖 第 四 圖 本 發 明 電 極設 計 ( 1) 與電 源 供 應 器 與 電 極 接 法 ( 1) 的實施例示意圖 第 五 圖 本 發 明 之 電極 設 計 ( 2) 與 電 源 供 應 器 與 電 極 接 法 ( 2 )的示意 ;圖 第 六 圖 • 本 發 明 之 電極 設 計 ( 3) 示 意 圖 與 電 極 接 法 (3 )的示意圖 第 七 圖 • 本 發 明 之 電極 設 計 ( 4) 示 意 圖 第 八 圖 ; 本 發 明 之 電極 設 計 ( 5) 示 意 圖 與 電 極 接 法 (4 )的示意圖 第 九 圖 : 本 發 明 之 電極 設 計 ( 6) 示 意 圖 與 電 源 供 應 器 與 電 極 接法 ( 2) 第 十 圖 • 本 發 明 之 電極 設 計 ( 6) 示 意 圖 與 電 極 接 法 (3 )的示意圖 第 十 一 圖 • 本 發 明 之電 極 設 計 ( 7) 示 意 圖 第 十 二 圖 • 本 發 明 之電 極 設 計 ( 8) 示 意 圖 與 電 極 接 法 (4 )的示意圖 第 十 圖 參 • 本 發 明 之電 極 設 計 ( 9) 示 意 圖 及 電 源 供 應 器 與 電極 接 法 ( 1) 示 意 圖 第 十 四 圖 1 本 發 明 之電 極 設 計 ( 9) 與 電 極 接 法 (2)的 不意圖Page 17 595272 _Case No. 92119620_Year Month Day_Modified diagram simple explanation simple explanation] The first diagram is a conventional low-voltage capacitor plasma ri-n. Θ is also prepared. The second diagram is a conventional low-voltage hollow cathode plasma equipment diagram. Fig. 1 Schematic diagram of the device of the present invention. Fig. 4 Schematic diagram of the embodiment of the electrode design (1) of the present invention and the power supply and electrode connection method (1). Fifth diagram of the electrode design of the present invention (2). The schematic diagram of the method (2); Figure 6 • The electrode design (3) of the present invention and the electrode connection method (3) The seventh diagram • The electrode design (4) of the present invention The eighth diagram; Electrode design (5) schematic diagram and electrode connection method (4) Schematic diagram ninth: electrode design of the present invention (6) schematic diagram and power supply and electrode connection method (2) tenth Figure • Schematic diagram of electrode design (6) and electrode connection method (3) of the present invention. Figure 11 Schematic diagram of electrode design (7) of the present invention. Figure 12 Schematic diagram of electrode design (8) of the present invention. The schematic diagram of the connection method (4). Tenth reference picture • The electrode design of the invention (9) The schematic diagram and the power supply and electrode connection method (1) The schematic diagram of the fourteenth figure 1 The electrode design of the invention (9) and electrode connection method (2) Unintentional

第18頁Page 18

595272 _案號 92119620_年月日__ 圖式簡單說明 第十五圖:本發明之電極設計(10)示意圖與電極接 法(3 )的示意圖 第十六圖:本發明之電極設計(11 )示意圖 第十七圖:本發明之電源供應器與電極接法(4 )的 示意圖 第十八圖:本發明之電極設計(1 2 )示意圖及電源供 應器與電極接法(1 )示意圖 第十九圖:本發明之電極設計(13)與電極接法(2) 的不意圖 第二十圖:本發明之電極設計(14)示意圖與電極接 法(3 )的示意圖 第二十一圖:本發明之電極設計(1 5 )示意圖 第二十二圖:本發明之電極設計(1 6 )示意圖與電源 供應器與電極接法(4 )的示意圖 第二十三圖:本發明之電極設計(1 7 )示意圖與電源 供應器與電極接法(1 )的示意圖 第二十四圖:本發明之電極設計(1 8 )示意圖及電源 供應器與電極接法(2)示意圖 第二十五圖:本發明之電極設計(1 9 )示意圖與電源 供應器與電極接法(3 )的示意圖 第二十六圖:本發明之電極設計(2 0 )示意圖 第二十七圖:本發明之電極設計(2 1 )示意圖與電源 供應與電極接法(4)的不意圖 第二十八圖:本發明的加裝磁場其組裝示意圖(一)595272 _Case No. 92119620_Year Month__ Brief description of the drawing Figure 15: Schematic diagram of the electrode design (10) and electrode connection method (3) of the present invention Figure 16: The electrode design of the present invention (11 ) Schematic Figure 17: Schematic diagram of the power supply and electrode connection method (4) of the present invention Figure 18: Schematic diagram of the electrode design (1 2) and power supply and electrode connection method (1) of the present invention Figure 19: The intention of the electrode design (13) and electrode connection method (2) of the present invention. Figure 20: The schematic diagram of the electrode design (14) and electrode connection method (3) of the present invention. : Schematic diagram of the electrode design (15) of the present invention Figure 22: Schematic diagram of the electrode design (16) of the present invention and schematic diagram of the power supply and electrode connection method (4) Figure 23: Electrode of the invention Design (1 7) schematic diagram and schematic diagram of power supply and electrode connection (1) Figure 24: schematic diagram of electrode design (18) of the present invention and schematic diagram of power supply and electrode connection (2) twentieth Figure 5: The electrode design (19) of the present invention Schematic diagram of the connection to the power supply and the electrode (3) Figure 26: Schematic diagram of the electrode design (20) of the present invention Figure 27: Schematic diagram of the electrode design (2 1) of the present invention and power supply and electrodes Unintended connection (4) Figure 28: Schematic diagram of the assembly of the installed magnetic field of the present invention (1)

595272 案號 92119620 曰 修正 圖式簡單說明 第二 第三 第三 第三 圖:本發明的加裝磁場其組裝示意圖(二) :本發明實施例(一)之電漿產生情形及裝 置示意圖 :本發明實施例(一)之電漿放射光譜 :本發明實施例(一)以RF電源供應器 外加在微中空陰極之電壓一電流關係圖 圖:本發明比較例(一)以DC電源供應器及 Pulsembwu電源供應器外加在中空陰極 電極上之電壓電流關係圖 十四圖:本發明實施例(二)之電漿產生情形 件〕 一:APPLIED PHYSICE LETTERS VOLUME 82, NUMVER 3 20 JAUNARY 20 0 3之期刑 十九 十圖 十一 十二 第三十三 第三 〔參照附 附件 圖 圖 〔參照圖號〕 ( 1 ) 真空腔體 ( 1 1 ) 電極 ( 1 2 ) 直流電源 ( 1 3 ) 高週波電源 ( 1 4 ) 接地電極 ( 1 5 ) 中空陰極 ( 2 ) 電漿產生系統 ( 2 1 ) 電極 ( 2 1 1 ) 孔洞 ( 2 1 2 ) 絕緣材料 ( 2 1 3 ) 金屬導電片 ( 2 1 4 ) 金屬導電片 ( 2 1 5 ) 溝槽 ( 2 1 6 ) 錐狀金屬 ( 2 1 7 ) 柱狀或樹狀微結構 ( 2 1 8 ) 金屬網 ( 2 1 9 ) 金屬網 ( 2 2 ) 電極 ( 2 3 ) 電源供應器595272 Case No. 92119620 Brief description of the modified diagram Second, third, third, and third diagrams: Schematic diagram of the assembly of the installed magnetic field of the present invention (II): Plasma generation situation and device diagram of the embodiment (I) of the present invention: this Inventive Example (1) Plasma Emission Spectrum: Example (I) of the present invention (1) The voltage-current relationship diagram of a micro-hollow cathode with an RF power supply: Comparative Example (1) of the present invention with a DC power supply and The relationship between the voltage and current of the Pulsembwu power supply applied to the hollow cathode electrode is shown in Figure 14: the plasma generation situation in the embodiment (II) of the present invention] 1: APPLIED PHYSICE LETTERS VOLUME 82, NUMVER 3 20 JAUNARY 20 0 3 Punishment nineteen figure eleven twelve thirty-third third [Refer to the attached drawings [Refer to the number]] (1) Vacuum cavity (1 1) Electrode (1 2) DC power supply (1 3) High frequency power supply (1 4) Ground electrode (1 5) Hollow cathode (2) Plasma generation system (2 1) Electrode (2 1 1) Hole (2 1 2) Insulation material (2 1 3) Metal conductive sheet (2 1 4) metal Electric sheet (2 1 5) Groove (2 1 6) Cone metal (2 1 7) Columnar or tree microstructure (2 1 8) Metal mesh (2 1 9) Metal mesh (2 2) Electrode (2 3) Power supply

第20頁 595272 案號 92119620 年月曰 修正 圖式簡單說明 (24) 磁鐵 (25) 絕緣材料Page 20 595272 Case No. 92119620 Amendment Brief description of drawings (24) Magnet (25) Insulation material

II圓闘 第21頁II Round Page 21

Claims (1)

^y^z/z βΜ ^92Π902〇^ 六、申請專利範圍 1.一種電漿產生系統,包括有. 兩個電極,遠姑兩匕枯有· ^ 連接電源供應器; 電源供應器; 一磁% ’對應於電極 其特徵在於: 卜惻之兩磁鐵所產生, 電極為微中空降士 的金屬導電声所έ 為絕緣材料兩面附著有滿佈孔洞 曰吓、、且成; 連接微中空降极^ 流高頻電源。""的電源供應器提供ΙΟΟΚΗζ〜100MHz交 ! •-種電漿產生系統,包 兩個電極,磕社& L祜有· 連接電源供應考· 電源供應器; σ , 一磁場,f + Α & 其特徵在於極外側之兩磁鐵所產生; 電極為微中* 的金屬導電層所Γ ΐ彳° ’為絕緣材料兩面附著有滿佈孔洞 曰吓、、、且成; 連接微中空险Μ Μ ΙΟΟΚΗζ交流 高頻電源。 β 11的電源供應器提供1 KHz 3.一種電漿產生系統,包括有. ❿ :個電極,連接電源供應器;有. 電源供應器; 一磁場,對應於電極 其特徵在於··之兩磁鐵所產生; 、、、、、材料兩面附著有錐狀金屬 電極為微中空陰極,^ y ^ z / z βΜ ^ 92Π902〇 ^ 6. Application for patent scope 1. A plasma generation system, including two electrodes, two poles, distant daggers, and two ^ connected to a power supply; power supply; a magnetic “%” Corresponds to the electrode. It is characterized by: The two magnets generated by the bu yi, the electrode is the metal conductive sound of the micro hollow descent, and the insulating material is covered with holes on both sides. It is connected to the micro hollow descent. ^ Stream high-frequency power. " " The power supply provides ΙΟΟΚΗζ ~ 100MHz AC! • -A kind of plasma generation system, including two electrodes, 磕 社 & L 祜 has a connection power supply test · Power supply; σ, a magnetic field, f + Α & It is characterized by two magnets on the outer side of the pole; The electrode is made of a metal conductive layer in the middle * Γ ΐ 彳 ° 'is filled with holes on both sides of the insulating material. It is connected to the hollow Risk Μ ΙΟΟΚΗζ AC high-frequency power supply. The power supply of β 11 provides 1 KHz 3. A plasma generating system includes: ❿: an electrode connected to a power supply; yes. a power supply; a magnetic field corresponding to the electrode is characterized by two magnets The produced; ,,,,,, and materials have micro-hollow cathodes with tapered metal electrodes attached to both sides, 595272595272 的金屬導電層所組成; 士一連接微中空陰極的電源供應器提供100KHz〜100MHz交 流南頻電源。 4 · 一種電漿產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器; 一磁場,對應於電極外側之兩磁鐵所產生; 其特徵在於: 電極為微中空陰極,為绍铋从丄丨 人碎It consists of a metal conductive layer; The power supply of Shiyi connected to the micro-hollow cathode provides 100KHz ~ 100MHz AC south frequency power supply. 4 · A plasma generating system includes: two electrodes connected to a power supply; a power supply; a magnetic field corresponding to two magnets generated outside the electrode; characterized in that the electrode is a micro hollow cathode and is made of bismuth Crushing people 的金屬導電層所組成;s緣材料兩面附著有錐狀金屬 高頻5 ^微中工陰極的電源供應器提供1KHz〜1 〇〇KHz交流 b·—種電漿產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器; 之兩磁鐵所產生It consists of a metal conductive layer; a cone-shaped metal high-frequency 5 ^ micro-electrode cathode power supply is attached to both sides of the s-edge material and provides 1KHz ~ 100KHz AC b · —a plasma generation system, including: two Electrode connected to power supply; power supply; generated by two magnets 一磁場,對應於電極外側 其特徵在於: 為絕緣材料兩面附著有金屬網的 源、供應器提供l00KHz〜100MHz交 電極為微中空陰極, 金屬導電層所組成; 連接微中空陰極的電 流高頻電源。 :二種電疑產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器;A magnetic field, corresponding to the outside of the electrode, is characterized in that: a source and a supplier with a metal mesh attached to both sides of the insulating material are provided with a 100 KHz to 100 MHz cross electrode as a micro-hollow cathode and a metal conductive layer; and a high-frequency current source connected to the micro-hollow cathode . : Two types of electrical suspect generation systems, including: two electrodes connected to a power supply; a power supply; 第23頁 I 號 92119620 六、申請專利範圍Page 23 No. 92119620 VI. Scope of patent application 修正 一磁場,對應於電極外 其特徵在於: 外側之兩磁鐵所產生,· 電極為微中空陰極,為绍 金屬導電層所組成; 為絕緣材料兩面附著有金屬網的 高頻電源 7 *、、Ϊ微中工陰極的電源供應器提供IKHz〜ΙΟΟΚΗζ交 流 •一種電漿產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器; 在:應於電極外側之兩磁鐵所產生; 構的;為絕緣材料兩面附著有柱狀微結 流高中空陰極的電源供應器提供1()°ΚΗζ〜1 °°ΜΗζ交 I二種電漿產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器;二在;應於電極外側之兩磁鐵所產生; 構的金屬ί ΪJ J::為絕緣材料兩面附著有柱狀微結 高頻電源 連接微中空陰極的電源供應器提供ΙΚΗζ〜100ΚΗΖ交 流Correcting a magnetic field, corresponding to the outside of the electrode, is characterized by: generated by two magnets on the outside, · the electrode is a micro-hollow cathode, composed of a conductive metal layer, and is a high-frequency power supply with metal mesh attached to both sides of the insulating material 7 * ,,, ΪWeizhonggong cathode power supply provides IKHz ~ ΙΟΟΚΗζ AC • A plasma generation system includes: two electrodes connected to the power supply; power supply; in: generated by two magnets that should be outside the electrode; structure ; For the power supply with columnar micro-junction high hollow cathodes attached to both sides of the insulating material, 1 () ° KΗζ ~ 1 ° MΗζ two kinds of plasma generation system, including: two electrodes, connected to the power supply Power supply; two on; produced by two magnets on the outside of the electrode; structured metal ί JJ J :: Provides ΙΚΗζ for power supply with cylindrical micro-junction high-frequency power connection on both sides of the insulating material connected to the micro-hollow cathode ~ 100KKZ exchange 第24頁 595272 年 η 修正 曰 &案號 92119620 六、申請專利範圍 9 · 一種電漿產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器; 一磁場,對應於電極外側之兩磁鐵所產生; 其特徵在於: ^ # ^ f Ϊ為微中空陰極,為絕緣材料兩面附著有樹狀微結 構的金屬導電層所組成; 連接微中空陰極的電源供應器提供1〇〇KHz〜1〇〇MHz交 流高頻電源。 1 〇 · —種電漿產生系統,包括有: 兩個電極,連接電源供應器; 電源供應器; 一磁場,對應於電極外側之兩磁鐵所產生; 其特徵在於: 搂认!ΐ為微中空陰極’為絕緣材料兩面附著有樹狀微結 構的金屬導電層所組成; 一 π ί接微中空陰極的電源供應器提供UHZ〜100ΚΗΖ交流 焉頻電源。 中之i i 請專利範圍第1項所述電漿產生系統’其 中之微中二陰極之電極的孔洞小於lmm。 中之二範圍第1項所述電浆產生系統,其 τ之微中王陰極之電極的孔洞小於〇.5mm。 7」3 ·如申請專利範圍第1、2、3、4、5、6、 9或1 〇項所述電漿產生系統,其中之電極可為Page 24 595272 η Amendment & Case No. 92119620 6. Scope of Patent Application 9. A plasma generating system includes: two electrodes connected to a power supply; a power supply; a magnetic field corresponding to the outside of the electrode It is produced by two magnets; It is characterized by: ^ # ^ f Ϊ is a micro-hollow cathode, which is composed of a metal conductive layer with a tree-like microstructure attached to both sides of an insulating material; a power supply connected to the micro-hollow cathode provides 100 kHz ~ 100MHz AC high-frequency power supply. 1 〇 · A plasma generation system, including: two electrodes connected to a power supply; a power supply; a magnetic field corresponding to the two magnets generated outside the electrode; its characteristics are: ΐ is a micro-hollow cathode 'is composed of a metal conductive layer with a tree-like microstructure attached to both sides of an insulating material; a π micro-hollow cathode power supply provides UHZ ~ 100KZZ AC high-frequency power supply. Zhong i i Please refer to the plasma generating system described in item 1 of the patent scope, where the holes of the electrodes of the micro-middle cathode are less than 1 mm. The plasma generation system described in item 2 of the second range has a hole with an electrode of τ that is slightly smaller than 0.5 mm. 7 ″ 3 · As described in the patent application scope item 1, 2, 3, 4, 5, 6, 9, or 10, the electrode can be 第25頁 595272 _案號 92119620_年月日_i±^_ 六、申請專利範圍 一微中空陰極電極,另一為金屬電極。 1 4 ·如申請專利範圍第1 、2 、3 、4、5 、6 、 7、8 、9或1 0項所述電漿產生系統,其中之電極可為 二個均為微中空陰極電極。 1 5 ·如申請專利範圍第1 、2 、3 、4、5 、6 、 7、8 、9或10項所述電漿產生系統,其中之電極可為 一微中空陰電極,另一為金屬屬板附著有絕緣材料之電極Page 25 595272 _ Case No. 92119620_ Year Month Date _i ± ^ _ VI. Scope of Patent Application One micro-hollow cathode electrode and the other a metal electrode. 1 4 · According to the plasma generating system described in item 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 of the scope of patent application, the electrodes can be two micro-hollow cathode electrodes. 1 5 · According to the plasma generation system described in item 1, 2, 3, 4, 5, 6, 6, 7, 8, 9 or 10 of the scope of patent application, one of the electrodes may be a micro hollow cathode and the other is a metal Electrodes with insulating material attached to the metal plate 、料 6材 、緣 5絕 、之 4中 、其 3 , 、統 2系 、生 1產 第漿 圍電 範述 利所 專項 請ο rH 如或 .9 6 、 18 7 、料 6材 、緣 5絕 、之 4中 、其 3 , 、統 2系 、生 1產 第漿 圍電 範述 利所 專項 請ο 中 1 。如或 鋁· 9 化7 、 氧1 00 為 、 可 7 、料 6材 、緣 5絕 、之 4中 、其 3 , 、統 2系 、生 1產 第漿 圍電 範述 利所 專項 請ο IX 。如或 彌 · 9 化8 、 氣1 00 為 、 可 7 、電 6導 、 屬 5金 、之 4中 、其 3 , 、統 2系 、生 1產 第漿 圍電 範述 利所 專項 請ο 如或 0 · 9 磁9 、 陶1 8 為 、 可 7 、電 6導 、 5金 、之 4中 、其 3 , 。、統 上2系 料、生 材 1 產 緣第漿 絕圍電 於範述 著利所 附專項 式請ο 方申1 膜如或 鍍· 9 以ο 、 為2 8 可 、 層 7 統 系 生 產 漿 述 。所 上項 料8 材或 緣7 絕第 於圍 著範 附利 式專 方請 刷申 印如 版· 網1 為2 可 層 第26頁 595272 _案號 92119620_年月日__ 六、申請專利範圍 ,其中之柱狀微結構可為奈米碳管。 2 2 ·如申請專利範圍第7或8項所述電漿產生系統 ,其中之柱狀微結構可為奈米柱狀結構。 2 3 ·如申請專利範圍第9或1 0項所述電漿產生系 統,其中之樹狀微結構可為奈米碳管。 2 4 ·如申請專利範圍第9或1 0項所述電漿產生系 統,其中之樹狀微結構可為奈米柱狀結構。6 materials, 5 materials, 4 materials, 4 materials, 3 materials, 2 materials, 1 product, 1 material, 1 battery, 6 materials, 6 materials, 1 material, 6 materials, materials For 5 special projects, 4 of them, 3 of them, 2 departments of the Department of Health, and 1 of the 1st company, please refer to ο 1 for the special projects. For example, aluminum alloys, chemical compounds, oxygen compounds, chemical compounds, materials, materials, materials, materials, materials, materials, materials, materials, etc. Please refer to the special projects. IX. For example, if you want to use a battery, you can use a gas, a gas, a gas, a gas, a gas, a gas, a gas, a gas, a gas, a metal, a metal, a metal, a metal, or a metal. For example, 0 · 9 magnetic 9 and pottery 1 8 are, can 7, electric 6 conductance, 5 gold, 4 of them, 3 of them. 1. The 2 raw materials, raw materials, and raw materials are produced in the first place. The special formula attached to the fan is required. Fang Shen 1 Films such as or plated · 9 to ο, to 2 8 may, layer 7 Paste. The item above 8 material or edge 7 must be enclosed in the Fan Fuli style. Please apply for printing as the version. Net 1 is 2 layers. Page 26 595272 _ Case No. 92119620_ year month day __ VI. Application The scope of the patent, in which the columnar microstructure can be a nano carbon tube. 2 2 · The plasma generation system described in item 7 or 8 of the scope of patent application, wherein the columnar microstructure may be a nanocolumnar structure. 2 3 · The plasma generating system according to item 9 or 10 of the scope of patent application, wherein the tree-like microstructure may be a nano carbon tube. 24. The plasma generating system according to item 9 or 10 of the scope of patent application, wherein the tree-like microstructure may be a nano-columnar structure. 第27頁Page 27
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133347B2 (en) 2005-03-05 2012-03-13 Huettinger Elektronik Gmbh + Co. Kg Vacuum plasma generator
TWI403221B (en) * 2008-11-05 2013-07-21 Wonik Ips Co Ltd Plasma generation apparatus and plasma treatment apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133347B2 (en) 2005-03-05 2012-03-13 Huettinger Elektronik Gmbh + Co. Kg Vacuum plasma generator
TWI403221B (en) * 2008-11-05 2013-07-21 Wonik Ips Co Ltd Plasma generation apparatus and plasma treatment apparatus

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