TWI226655B - Micro-pattern forming method for semiconductor device - Google Patents

Micro-pattern forming method for semiconductor device Download PDF

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Publication number
TWI226655B
TWI226655B TW091136444A TW91136444A TWI226655B TW I226655 B TWI226655 B TW I226655B TW 091136444 A TW091136444 A TW 091136444A TW 91136444 A TW91136444 A TW 91136444A TW I226655 B TWI226655 B TW I226655B
Authority
TW
Taiwan
Prior art keywords
insulating film
film
forming
pattern
insulation film
Prior art date
Application number
TW091136444A
Other languages
English (en)
Chinese (zh)
Other versions
TW200411729A (en
Inventor
Cheol-Soo Park
Original Assignee
Dongbu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongbu Electronics Co Ltd filed Critical Dongbu Electronics Co Ltd
Publication of TW200411729A publication Critical patent/TW200411729A/zh
Application granted granted Critical
Publication of TWI226655B publication Critical patent/TWI226655B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
TW091136444A 2001-12-20 2002-12-17 Micro-pattern forming method for semiconductor device TWI226655B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0081791A KR100449319B1 (ko) 2001-12-20 2001-12-20 반도체 소자의 미세 패턴 형성 방법

Publications (2)

Publication Number Publication Date
TW200411729A TW200411729A (en) 2004-07-01
TWI226655B true TWI226655B (en) 2005-01-11

Family

ID=27606983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091136444A TWI226655B (en) 2001-12-20 2002-12-17 Micro-pattern forming method for semiconductor device

Country Status (4)

Country Link
JP (1) JP3841345B2 (ja)
KR (1) KR100449319B1 (ja)
CN (1) CN1267968C (ja)
TW (1) TWI226655B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100781542B1 (ko) 2006-06-08 2007-12-03 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
KR100843241B1 (ko) * 2007-03-29 2008-07-02 삼성전자주식회사 반도체 소자의 제조방법
CN102446704B (zh) * 2010-10-14 2013-09-11 中芯国际集成电路制造(上海)有限公司 双重图形化方法
US11424124B2 (en) * 2020-11-05 2022-08-23 Nanya Technology Corporation Method of forming a patterned hard mask and method of forming conductive lines
CN115241047B (zh) * 2021-04-23 2024-09-13 长鑫存储技术有限公司 半导体结构的制备方法
US12068158B2 (en) 2021-04-23 2024-08-20 Changxin Memory Technologies, Inc. Method for fabricating semiconductor structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930001301A (ko) * 1991-06-10 1993-01-16 김광호 반도체 패턴 형성방법
KR970048979A (ko) * 1995-12-16 1997-07-29 김주용 미세 패턴을 갖는 마스크 형성 방법
KR0159012B1 (ko) * 1995-12-29 1998-12-15 김주용 2층 감광막 패턴 형성방법
KR100465743B1 (ko) * 1997-06-26 2005-04-19 주식회사 하이닉스반도체 반도체소자제조방법
KR20010011143A (ko) * 1999-07-26 2001-02-15 김영환 반도체소자의 미세패턴 형성방법

Also Published As

Publication number Publication date
TW200411729A (en) 2004-07-01
KR20030051000A (ko) 2003-06-25
KR100449319B1 (ko) 2004-09-18
CN1438677A (zh) 2003-08-27
JP3841345B2 (ja) 2006-11-01
JP2003197622A (ja) 2003-07-11
CN1267968C (zh) 2006-08-02

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MM4A Annulment or lapse of patent due to non-payment of fees