TWI230984B - Method for forming a masking layer on a substrate - Google Patents

Method for forming a masking layer on a substrate Download PDF

Info

Publication number: TWI230984B
Authority: TW; Taiwan
Prior art keywords: layer; substrate; scope; patent application; item
Prior art date: 2002-08-16

Application number

TW092118254A

Other languages

English (en)

Chinese (zh)

Other versions

TW200403756A (en

Inventor

Stefan Tegen

Peter Moll

Original Assignee

Infineon Technologies Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-08-16

Filing date

2003-07-03

Publication date

2005-04-11

2003-07-03 Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag

2004-03-01 Publication of TW200403756A publication Critical patent/TW200403756A/zh

2005-04-11 Application granted granted Critical

2005-04-11 Publication of TWI230984B publication Critical patent/TWI230984B/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 54
238000000034 method Methods 0.000 title claims abstract description 33
230000000873 masking effect Effects 0.000 title abstract 4
239000000463 material Substances 0.000 claims abstract description 19
229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 11
238000000151 deposition Methods 0.000 claims abstract description 4
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
229910052760 oxygen Inorganic materials 0.000 claims description 14
239000001301 oxygen Substances 0.000 claims description 14
239000000126 substance Substances 0.000 claims description 14
229920002120 photoresistant polymer Polymers 0.000 claims description 10
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
229910052799 carbon Inorganic materials 0.000 claims description 8
238000005530 etching Methods 0.000 claims description 5
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
230000009471 action Effects 0.000 claims description 3
229910052717 sulfur Inorganic materials 0.000 claims description 3
239000011593 sulfur Substances 0.000 claims description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
230000000694 effects Effects 0.000 claims description 2
239000007943 implant Substances 0.000 claims description 2
229910052698 phosphorus Inorganic materials 0.000 claims description 2
239000011574 phosphorus Substances 0.000 claims description 2
239000004020 conductor Substances 0.000 claims 1
229910001882 dioxygen Inorganic materials 0.000 claims 1
238000005468 ion implantation Methods 0.000 claims 1
229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
239000004926 polymethyl methacrylate Substances 0.000 claims 1
238000001311 chemical methods and process Methods 0.000 abstract 2
239000010410 layer Substances 0.000 description 48
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 9
239000003990 capacitor Substances 0.000 description 8
238000006243 chemical reaction Methods 0.000 description 5
239000004065 semiconductor Substances 0.000 description 5
229910002092 carbon dioxide Inorganic materials 0.000 description 4
239000001569 carbon dioxide Substances 0.000 description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
229920005591 polysilicon Polymers 0.000 description 4
230000008901 benefit Effects 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
239000000567 combustion gas Substances 0.000 description 2
239000011231 conductive filler Substances 0.000 description 2
230000008021 deposition Effects 0.000 description 2
238000009826 distribution Methods 0.000 description 2
239000007789 gas Substances 0.000 description 2
238000002513 implantation Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
238000001459 lithography Methods 0.000 description 2
238000005498 polishing Methods 0.000 description 2
230000005855 radiation Effects 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
241000218206 Ranunculus Species 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000004913 activation Effects 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
210000004556 brain Anatomy 0.000 description 1
229910002090 carbon oxide Inorganic materials 0.000 description 1
230000008859 change Effects 0.000 description 1
229910052729 chemical element Inorganic materials 0.000 description 1
238000002485 combustion reaction Methods 0.000 description 1
239000000470 constituent Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000004744 fabric Substances 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
238000009434 installation Methods 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
238000005121 nitriding Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000011368 organic material Substances 0.000 description 1
238000000053 physical method Methods 0.000 description 1
238000010187 selection method Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000004575 stone Substances 0.000 description 1
239000002344 surface layer Substances 0.000 description 1
230000009466 transformation Effects 0.000 description 1
WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
229910021342 tungsten silicide Inorganic materials 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)
Chemically Coating (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

TW092118254A 2002-08-16 2003-07-03 Method for forming a masking layer on a substrate TWI230984B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE10237508A DE10237508A1 (de)	2002-08-16	2002-08-16	Verfahren zum Bilden einer Maskierschicht auf einem Substrat

Publications (2)

Publication Number	Publication Date
TW200403756A TW200403756A (en)	2004-03-01
TWI230984B true TWI230984B (en)	2005-04-11

Family

ID=31501774

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092118254A TWI230984B (en)	2002-08-16	2003-07-03	Method for forming a masking layer on a substrate

Country Status (3)

Country	Link
DE (1)	DE10237508A1 (de)
TW (1)	TWI230984B (de)
WO (1)	WO2004019133A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE10355225B3 (de) *	2003-11-26	2005-03-31	Infineon Technologies Ag	Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4821094A (en) *	1985-11-08	1989-04-11	Lockheed Missiles & Space Company, Inc.	Gate alignment procedure in fabricating semiconductor devices
JP2786307B2 (ja) *	1990-04-19	1998-08-13	三菱電機株式会社	電界効果トランジスタ及びその製造方法
US6426253B1 (en) *	2000-05-23	2002-07-30	Infineon Technologies A G	Method of forming a vertically oriented device in an integrated circuit

2002
- 2002-08-16 DE DE10237508A patent/DE10237508A1/de not_active Withdrawn
2003
- 2003-07-03 TW TW092118254A patent/TWI230984B/zh not_active IP Right Cessation
- 2003-07-22 WO PCT/DE2003/002471 patent/WO2004019133A2/de not_active Ceased

Also Published As

Publication number	Publication date
TW200403756A (en)	2004-03-01
DE10237508A1 (de)	2004-03-11
WO2004019133A2 (de)	2004-03-04
WO2004019133A3 (de)	2004-10-07

Legal Events

Date	Code	Title	Description
2009-01-11	MM4A	Annulment or lapse of patent due to non-payment of fees

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