TWI288328B - Non-volatile memory and method with non-sequential update block management - Google Patents

Non-volatile memory and method with non-sequential update block management Download PDF

Info

Publication number
TWI288328B
TWI288328B TW093141426A TW93141426A TWI288328B TW I288328 B TWI288328 B TW I288328B TW 093141426 A TW093141426 A TW 093141426A TW 93141426 A TW93141426 A TW 93141426A TW I288328 B TWI288328 B TW I288328B
Authority
TW
Taiwan
Prior art keywords
block
logical
update
memory
data
Prior art date
Application number
TW093141426A
Other languages
English (en)
Chinese (zh)
Other versions
TW200601043A (en
Inventor
Alan Welsh Sinclair
Sergey Anatolievich Gorobets
Alan David Bennett
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/750,155 external-priority patent/US7139864B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200601043A publication Critical patent/TW200601043A/zh
Application granted granted Critical
Publication of TWI288328B publication Critical patent/TWI288328B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
TW093141426A 2003-12-30 2004-12-30 Non-volatile memory and method with non-sequential update block management TWI288328B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,155 US7139864B2 (en) 2003-12-30 2003-12-30 Non-volatile memory and method with block management system
US10/917,867 US20050141312A1 (en) 2003-12-30 2004-08-13 Non-volatile memory and method with non-sequential update block management

Publications (2)

Publication Number Publication Date
TW200601043A TW200601043A (en) 2006-01-01
TWI288328B true TWI288328B (en) 2007-10-11

Family

ID=34753194

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141426A TWI288328B (en) 2003-12-30 2004-12-30 Non-volatile memory and method with non-sequential update block management

Country Status (4)

Country Link
EP (1) EP1704484A2 (fr)
KR (1) KR20070007264A (fr)
TW (1) TWI288328B (fr)
WO (1) WO2005066793A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417889B (zh) * 2009-12-30 2013-12-01 Silicon Motion Inc 快閃記憶體之寫入逾時控制方法及其記憶裝置
TWI424438B (zh) * 2009-12-30 2014-01-21 Asolid Technology Co Ltd 非揮發性記憶體控制裝置及其多階重新排序方法
US9058253B2 (en) 2007-07-04 2015-06-16 Samsung Electronics Co., Ltd. Data tree storage methods, systems and computer program products using page structure of flash memory
US9396103B2 (en) 2007-06-08 2016-07-19 Sandisk Technologies Llc Method and system for storage address re-mapping for a memory device
US10089225B2 (en) 2014-10-31 2018-10-02 Silicon Motion, Inc. Improving garbage collection efficiency by reducing page table lookups

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
WO2005106673A1 (fr) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. Dispositif de stockage non volatile et procede d’ecriture de donnees
US9104315B2 (en) 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
JP4547028B2 (ja) * 2005-08-03 2010-09-22 サンディスク コーポレイション ブロック管理を伴う不揮発性メモリ
KR101272642B1 (ko) * 2005-08-03 2013-06-10 쌘디스크 코포레이션 플래시 메모리시스템 내의 데이터 저장 용량의 리클레이밍
US7627733B2 (en) 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
KR101378031B1 (ko) * 2005-08-03 2014-03-27 샌디스크 테크놀로지스, 인코포레이티드 데이터 파일을 직접적으로 저장하는 메모리 블록의 관리
US7984084B2 (en) * 2005-08-03 2011-07-19 SanDisk Technologies, Inc. Non-volatile memory with scheduled reclaim operations
JP4751163B2 (ja) * 2005-09-29 2011-08-17 株式会社東芝 メモリシステム
US7793068B2 (en) 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US7769978B2 (en) 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
WO2008082996A1 (fr) 2006-12-26 2008-07-10 Sandisk Corporation Système de fichiers de données directes comprenant une interface d'espace adresse logique continu
US7917686B2 (en) 2006-12-26 2011-03-29 Sandisk Corporation Host system with direct data file interface configurability
US8209461B2 (en) 2006-12-26 2012-06-26 Sandisk Technologies Inc. Configuration of host LBA interface with flash memory
US7739444B2 (en) 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
US8046522B2 (en) 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US8166267B2 (en) 2006-12-26 2012-04-24 Sandisk Technologies Inc. Managing a LBA interface in a direct data file memory system
KR100907477B1 (ko) * 2007-07-16 2009-07-10 한양대학교 산학협력단 플래시 메모리에 저장된 데이터의 인덱스 정보 관리 장치및 방법
JP2009211192A (ja) * 2008-02-29 2009-09-17 Toshiba Corp メモリシステム
KR101565975B1 (ko) 2009-02-27 2015-11-04 삼성전자주식회사 인덱스를 저장하는 플래시 메모리를 포함하는 사용자 장치 및 그것의 인덱스 액세스 방법
KR101543246B1 (ko) 2009-04-24 2015-08-11 삼성전자주식회사 데이터 저장 장치의 동작 방법 및 이에 따른 데이터 저장 장치
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10261876B2 (en) * 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
CN108959280B (zh) * 2017-05-17 2021-08-06 中国移动通信有限公司研究院 一种存储虚拟资源关联信息的方法及装置
TWI894007B (zh) * 2024-09-30 2025-08-11 大陸商星宸科技股份有限公司 存儲管理方法及存儲管理裝置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3604466B2 (ja) * 1995-09-13 2004-12-22 株式会社ルネサステクノロジ フラッシュディスクカード
JP3072722B2 (ja) * 1997-06-20 2000-08-07 ソニー株式会社 フラッシュメモリを用いるデータ管理装置及びデータ管理方法並びにフラッシュメモリを用いる記憶媒体
JP4085478B2 (ja) * 1998-07-28 2008-05-14 ソニー株式会社 記憶媒体及び電子機器システム
JP3967121B2 (ja) * 2001-12-11 2007-08-29 株式会社ルネサステクノロジ ファイルシステム、ファイルシステム制御方法およびファイルシステムを制御するためのプログラム
US6771536B2 (en) * 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9396103B2 (en) 2007-06-08 2016-07-19 Sandisk Technologies Llc Method and system for storage address re-mapping for a memory device
US9058253B2 (en) 2007-07-04 2015-06-16 Samsung Electronics Co., Ltd. Data tree storage methods, systems and computer program products using page structure of flash memory
TWI417889B (zh) * 2009-12-30 2013-12-01 Silicon Motion Inc 快閃記憶體之寫入逾時控制方法及其記憶裝置
TWI424438B (zh) * 2009-12-30 2014-01-21 Asolid Technology Co Ltd 非揮發性記憶體控制裝置及其多階重新排序方法
US10089225B2 (en) 2014-10-31 2018-10-02 Silicon Motion, Inc. Improving garbage collection efficiency by reducing page table lookups

Also Published As

Publication number Publication date
TW200601043A (en) 2006-01-01
WO2005066793A3 (fr) 2006-06-15
WO2005066793A2 (fr) 2005-07-21
EP1704484A2 (fr) 2006-09-27
KR20070007264A (ko) 2007-01-15

Similar Documents

Publication Publication Date Title
TWI288328B (en) Non-volatile memory and method with non-sequential update block management
TWI288327B (en) Non-volatile memory and method with control data management
CN100435116C (zh) 具有存储器平面对准的非易失性存储器及方法
TWI272487B (en) Non-volatile memory and method with memory planes alignment
CN101681317B (zh) 存储器系统
TW201027347A (en) Solid state drive operation
TW200951979A (en) Data writing method for flash memory and storage system and controller using the same
TWI634426B (zh) 管理邏輯至實體轉譯資訊的備份以控制開機時間以及寫入放大
TWI269154B (en) Non-volatile memory and method of storing data in a non-volatile memory
TW200837562A (en) Non-volatile memory and method for class-based update block replacement rules
TW201113883A (en) Multi-bank non-volatile memory system with satellite file system

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees