1299580 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種固態發光元件，特別是指一種側 向取光率高的固態發光元件。 【先前技術】 一般構成固態發光元件的η型半導體層、發光層 (actlve iayer)& ρ型半導體層等磊晶膜主要是呈透明態 ，而自發光層所產生出來的光子（ph〇t〇)是可在磊晶膜中四 面八方地傳遞，因此，有效地擷取固態發光元件的侧向光 源可提高固態發光元件的外部量子效率（external叫时七觀 efficiency)。 $閱圖1美國弟6 2 2 916 0號專利揭露一種可改善側向 光取出率的半導體發光元件1，包含：一具有一上表面lu 及複數連接該上表面U1的傾斜側面112並且是由磷化鎵 、（Gap)為主的材料所構成之磊晶體n、一視窗層12，及兩 分別連接該磊晶體u之上表面nl及該視窗層12的接觸 電極13。 該磊晶體11具有呈相反設置的一 n摻雜(n_d〇pe_ 113及一 P摻雜（P-doped)層114 ,並自該等摻雜層113、 114兩者之間界定出—發光區（active regi〇n)ii5 ,其中， 藉該蟲晶體11之上表面lu的面積大於該發光區ιΐ5的面 積以定義出該等傾斜側面112。該蟲晶體u之該等傾斜側 面112可以利用-具有一 v型鑛條的切割工具對該蟲晶體 Π施予成型（shaping)製程，亦可以利用噴砂 5 1299580 (sandblasting)或切刻（scribing)等方式達成成型製程。 該視窗層12是利用晶圓鍵合技術（ffafer b〇nding)與 該蟲晶體11的p摻雜層114相互接合。另，該視窗層i2 亦可利用乾式蝕刻或濕式蝕刻對GaP或砷化鎵（GaAs)等基 材予X银刻進而使GaP或GaAs等基材構成與該蟲晶體11 之傾斜側面Π 2相對應之傾斜側面121。 刖揭美國專利案於該磊晶體11形成該等傾斜侧面112 的原因’主要是在於’自GaP為主的材料所構之蠢晶體^ 的厚度甚高，為使得自該發光區115所產生的光子14可有 效地貢獻在外部量子效率上，因此，需在該磊晶體n形成 該等傾斜側面112以降低光子14的全反 於該等傾斜側Φ112上的光子14構成内部全反射（：= intemal reflecti〇n，簡稱TIR)進而增加形成於該磊晶體 11之上表面111的逃逸錐面（escape c〇ne)的機率。 雖然上述美國專利的幾何設計可提升該半導體發光元 件1的外部量子效率，然而，由於GaP所構成之蟲晶體n 的厚度過鬲，因此該視窗層丨2下側之一水平截面積亦相對 過小，導致在晶粒封裝時可供該半導體發光元件丨支撐的 底部面積太小而容易產生倒晶的現象。 另，该視窗層12是經由晶圓鍵合技術將Gap基材連接 於该磊晶體11之p摻雜層114，雖然經過成型製程以定義 出該視窗層12的傾斜側面121可優化光子14於行進過程 中的全反射環境，然而，由於該視窗層12之折射率 (refractive index)過高，致使光子丨4所欲形成全反射的 1299580 # 又亦相對提尚，因此光子14於行進過程中，該視窗 的傾斜側面121所能提供的全反射貢獻度有限。 再者， ，主要θ 述的視窗層12在使用晶圓鍵合技術的機制上 θ用GaP與该磊晶體11兩者之間的原子擴散以形 成共晶進而& + #人 石曰雕 70々口。然而，在晶圓鍵合的過程中需對該 整雕纟士播士及4視自層12施予晶體對位（alignment)以降低 绞知'丨生义差的問題，因此，製作流程較為複雜。 恭本綜上所述，如何優化晶粒外觀的幾何結構，使得固態 # 2 #所產生的光子配合此幾何結構以有效地增加側向 的取光率，同時，簡化具備有側向部位取光率之固能 杳光兀件的製作流程， 心 7疋田别開發固悲發光元件相關領域 者所待克服的難題之一。 【發明内容】 因此，本發明之目的’即在提供 率 固態發光元件。 卩取九羊回的 相反於該第一側部的第二側部及 —於是，本發明側向取光率高的固態發光元件，包含. 一具有一第一側部、 · 3 連接該第-及第二側部的傾斜圍繞面之透明單二Γ: -具有-連接㈣透明單晶基材之第—側部 : 固態發光件。《光晶體包括—垂直於該 第一側部的圍繞面。 月早日日基材戈 本發明的功效在於，提供適#之晶粒外觀的 ’使得固態發光元件所產生的光子配 ：：捐 地增加側向光子的取光率，同時，可簡7:構以有效 Ί間化具備有側向部位 1299580 取光率之固態發光元件的製作流程。 【實施方式】 有關本發明之前 以下配合參考圖式之 清楚的呈現。 述及其他技術内容、特點與功效，在 四個車又佳實施例的詳細說明中，將可 在本發明被詳細描诚夕1 如… 之則，要注意的是，在以下的說 明内谷中，類似的元件Η 千疋以相同的編號來表示。 〈第一較佳實施例〉BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state light-emitting element, and more particularly to a solid-state light-emitting element having a high lateral light extraction rate. [Prior Art] Generally, an epitaxial film such as an n-type semiconductor layer, an illuminating layer, and a p-type semiconductor layer constituting a solid-state light-emitting element is mainly in a transparent state, and photons generated from the self-luminous layer (ph〇t) 〇) can be transmitted in all directions in the epitaxial film. Therefore, effectively extracting the lateral light source of the solid-state light-emitting element can improve the external quantum efficiency of the solid-state light-emitting element (external). A semiconductor light-emitting element 1 capable of improving the lateral light extraction rate, comprising: an upper surface lu and a plurality of inclined sides 112 connecting the upper surface U1 and being An epi-crystal, a window layer 12, and two contact electrodes 13 respectively connected to the upper surface n1 of the epi-crystal u and the window layer 12 are respectively formed of a gallium phosphide or a (Gap)-based material. The epitaxial crystal 11 has an n-doped (n_d〇pe_113 and a P-doped) layer 114 disposed oppositely and defined between the doped layers 113, 114. (active regi〇n) ii5, wherein the area of the surface lu above the insect crystal 11 is larger than the area of the light-emitting area ι 5 to define the inclined sides 112. The inclined sides 112 of the insect crystal u can utilize - A cutting tool having a v-type mineral bar applies a shaping process to the insect crystal crucible, and the molding process can also be achieved by sandblasting 5 1299580 (sandblasting) or scribing. The window layer 12 is made of crystal. The round bonding technique (ffafer b〇nding) is bonded to the p-doped layer 114 of the insect crystal 11. Alternatively, the window layer i2 may be dry-etched or wet-etched to a base such as GaP or gallium arsenide (GaAs). The material is X-engraved so that the substrate such as GaP or GaAs forms an inclined side surface 121 corresponding to the inclined side surface Π 2 of the insect crystal 11. The reason why the inclined crystal surface 11 forms the inclined side surface 112 is disclosed in the U.S. Patent. Mainly due to the thickness of the stupid crystal constructed by the material based on GaP Very high, in order to enable the photons 14 generated from the illuminating region 115 to effectively contribute to the external quantum efficiency, it is necessary to form the slanted sides 112 in the epitaxial crystal n to reduce the all-inversion of the photons 14 The photon 14 on the side Φ 112 constitutes internal total reflection (:= inteal reflecti〇n, abbreviated as TIR) and thereby increases the probability of an escape cone formed on the upper surface 111 of the epitaxial crystal 11. Although the above-mentioned US patent The geometrical design can improve the external quantum efficiency of the semiconductor light-emitting element 1. However, since the thickness of the insect crystal n formed by GaP is too large, the horizontal cross-sectional area of the lower side of the window layer 丨2 is also relatively small, resulting in crystal When the particle package is used, the bottom area of the semiconductor light-emitting device can be too small to be easily crystallized. In addition, the window layer 12 is connected to the epi-crystal 11 by a wafer bonding technique. The impurity layer 114, although undergoing a molding process to define the sloped side 121 of the window layer 12, optimizes the total reflection environment of the photon 14 during travel, however, due to the refractive index of the window layer 12 (refr The active index) is too high, so that the 1299580, which is the total reflection of the photon 丨4, is also relatively high, so the total reflection contribution of the inclined side 121 of the window during the photon 14 is limited. , the main layer θ of the window layer 12 on the mechanism using the wafer bonding technique θ uses the atomic diffusion between GaP and the epitaxial crystal 11 to form a eutectic and then & + #人石曰雕 70々口. However, in the process of wafer bonding, it is necessary to apply crystal alignment to the sculpt gentleman and the self-layer 12 to reduce the problem of singularity, so the production process is relatively complex. In summary, how to optimize the geometry of the grain appearance, so that the photons generated by the solid state # 2 # cooperate with the geometry to effectively increase the lateral light extraction rate, and at the same time simplify the light extraction with the lateral portion The production process of the solid-state light-emitting element of the rate, one of the problems to be overcome in the field of the development of the solid-spot light-emitting element. SUMMARY OF THE INVENTION Therefore, the object of the present invention is to provide a solid-state light-emitting element. The second side portion of the first side portion opposite to the first side portion is taken and the solid light-emitting element having a high lateral light extraction rate of the present invention comprises: a first side portion, a third connecting portion - and a transparent single bismuth of the slanted surrounding surface of the second side: - having - connecting (four) the first side of the transparent single crystal substrate: a solid state illuminating member. The light crystal includes a surrounding surface perpendicular to the first side. The effect of the invention of the substrate in the early days of the month is to provide a suitable appearance of the crystal grain of the solid-state light-emitting element:: donating the ground to increase the light-receiving rate of the lateral photon, and at the same time, The production process of the solid-state light-emitting element having the light-receiving rate of the lateral portion 1299580 is effectively performed. [Embodiment] Before the present invention, a clear presentation will be made with reference to the drawings. Referring to other technical contents, features and effects, in the detailed description of the four preferred embodiments, the invention can be described in detail as follows: Similar components 疋 thousands are indicated by the same number. <First Preferred Embodiment>
圖I本發明側向取光率高的固態發光元件之-第 U具她例’疋呈正向取光的結構，其包含：一透明單 晶基材2及一固態發光件3。 ，亥透明早曰曰基材2具有一第一側部U、一相反於該第 ’及一連接該第一及第二側部21 、22的傾斜圍繞面23 〇 4固怨發光件3具有_連接於該透明單晶基材2之第 /部21的發光晶體31、—透明歐姆接觸層32及兩提供 忒赉光晶體31產生電致發光效應的接觸電極33。 ，,、=發光晶體3丨是由一以氮化鎵（GaN)為主的半導體材 料所衣成。該發光晶體31包括一垂直於該透明單晶基材2 之第側°卩21的圍繞面311、一連接於該透明單晶基材2 之第-側部21的第一型半導體區312及一相反於該第一型 半導體區312的第二型半導體區313。該透明歐姆接觸層 32是疊置於該第二型半導體區313，該等接觸電極33是分 另J认置於5亥第一型半導體區312及該透明歐姆接觸層3 2上 1299580 值得一提的是，本發明 。 ® 23 Θ μ μ ju 早日日基材2的傾斜圍繞BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a structure of a solid-state light-emitting element having a high lateral light extraction rate, which is a forward-light-receiving structure comprising: a transparent single crystal substrate 2 and a solid state light-emitting member 3. The transparent transparent substrate 2 has a first side portion U, a tilting surrounding surface 23 opposite to the first portion and a first and second side portions 21, 22, and the illuminating member 3 has The luminescent crystal 31 connected to the first portion 21 of the transparent single crystal substrate 2, the transparent ohmic contact layer 32, and the two contact electrodes 33 which provide the electroluminescence effect to the electroluminescence effect. , , , = illuminating crystal 3 丨 is made of a semiconductor material mainly composed of gallium nitride (GaN). The illuminating crystal 31 includes a surrounding surface 311 perpendicular to the first side 21 of the transparent single crystal substrate 2, and a first type semiconductor region 312 connected to the first side portion 21 of the transparent single crystal substrate 2. A second type semiconductor region 313 opposite to the first type semiconductor region 312. The transparent ohmic contact layer 32 is stacked on the second type semiconductor region 313. The contact electrodes 33 are respectively disposed on the first-type semiconductor region 312 and the transparent ohmic contact layer 32. It is noted that the invention. ® 23 Θ μ μ ju As early as day, the substrate 2 is tilted around
面U疋猎由對該透明單晶基材2 ‘ 计I 適用於本發明該透明單 ή刻所構成。而 化石詹）其卜t 2是藍寳石（卿㈣及碳 在該第一較佳實施例中 、今货 4透明早晶基材2是藍寶 ，違弟一、二型半導體區312 疋風貝石 说 , 分別是一 η型丰導舻γ 及一 Ρ型半導體區。 尘千冷脰£ 在本發明中，由於該透明曰 是對藍寳石施予渴式㈣絲21的傾斜圍繞面23 …白a 4㈣所構成，因此，該傾斜圍繞面23 疋延自於下列所構成之群組：f一、{—“ J厂23 該透明單晶基材2 UM叫及{叫；且， …,a 们之弟-側部21的-水平截面積是 弟二側部22的一水平荔而拉^ 償疋大於忒 關係，是以”石:：積。有關於本發明藍寶石之晶面 μ 中的結構單胞（structural unit ceU) 定義之，相關定義已揭一“ ⑽it cell) 第__申人之前㈣申之中華民國 贅述。虎的專利說明書中，因此，於此不再多加 本發明該第一較佳 元件之f作方、丰日 先率南的固態發光 兀件之衣作H是簡單地說明於下。 參閱圖3，首务，# 声約1?nn A ; 一監虞石基板50上依序磊製一厚 度、、力1 20 0 nm的緩徐爲 層51、一厚度約2000職的第一型半 月豆（即，η 型丰道遍 1丰¥體）層52、一多重量子井 quantumwau，簡稱 _ 型半導體)層54以構&石 及弟-W導體(即，ρ 楫成一磊晶膜55 ’並對該藍寶石基板5〇 1299580 予以薄化達約200 jum的厚度。 進一步地，利用電漿辅助與 4 、 enhanrpH π/η 斤 予* 相〉儿積法（plasma- nhanced CVD，簡稱 PECVD)形 .π λλ ^ 包俣垓磊晶膜55及該藍 貝石基板50的氧化石夕（以〇2)膜… 其；生r /、甲 幵^成於该監寶石 基板50下表面的氧化矽膜56 圄崇TF1 土 -、 疋壬禝數正方形孔洞的幾何 Θ案（圖未不），且在該第一較佳 务絲+古旧舢忐 、也例中，該氧化矽膜 疋麵予阿洫熱處理以增加該氧化 其與該藍寶石基板5〇、石^55^本身的敏密性，及 攸川说日日Μ 55之間的附著性。 石日=地’將包覆有該氧化石夕膜56的藍寶石基板5〇及 心日、55放置於一由硫酸（H2S〇4)與碟酸（η 刻劑（體積比為3 : η中以约qnnv认 ^ ^ .各 中以約300C的温度進行濕式蝕刻， 猎以在該藍寶石基板50上形成複數傾斜圍繞面501。與本 ㈣刻劑之反應機财關的細部說明，亦請㈣發明人之 前所提申之中華民國第951G69㈣請號的專利說明書。 於完成濕式似彳後，將包覆有該氧切膜56的藍寶石 土扳50及观曰曰膜55依序地浸泡於體積濃度為5〇%的鹽酸 (HC1)水冷液、煮沸的王水（叫⑽及去離子水中，以 分別地移除該氧切膜56並完成清洗流程。進—步地，於 完成清洗流程後，利用乾式蝕刻法於該磊晶膜55上定義出 複數刀別具有-n型半導體區52，及__ p型半導體區的 發光晶體55’。 利用電子束瘵鍍系統（e-beam evaporation system) 晶 分別在每一發光晶體55,的p型半導體區54,形成一由鎳 (Νι)/金（Au)所構成的透明歐姆接觸層57，並於每一發光 10 l29958〇 體55,的該等透明歐姆接觸層”及㈣半導體區比上 2成-接觸電極58。最後，利用雷射以切割出本發明★亥第 )—。較佳實施例之側向取光率高的固態發光元件(如圖2二示 在本發明該第一較佳眚& 仫貝^例中，並不需要進行晶體對 位的流程，因此，相軔於今 宁 車乂於刖揭吴國專利的製作方法， 、明該第一較佳實施例於製作過程中較為簡單。又 <第二較佳實施例〉 參閱圖4’本發明側向取光率高的關發光元件之 二較佳實施例’大致上是與該第—較佳實施例相同， 同處僅在於該第二較佳實施例是呈背向取光的覆晶⑴心 P、。構口此’ 4昂一較佳實施例更包含一散熱單 透明單晶基材2的第二側部22具有一粗链表面221 以政熱导兀4具有-散熱塊4卜至少二焊墊^及至少二 該散熱塊41的導線43。每一谭墊42連； 應的導線43與該固態發光件3的接觸電極犯。 圖3 ’在一該第二較佳實施例的製作過程中，大致 與5亥弟一較佳貫施例相同，其不同處僅在於，位於★亥 Μ之下表面的氧化…6(即，呈複數正方： ，的侧案處；圖未示)是未施予高溫熱處理，其本身 及附著性較低’因此，於施予濕編 =亦傾向於由該氧化…舆該藍寶石基 ： 22 崎應’並形成該第二較佳實施例的粗輪表面 ，痛件一，附件-顯示出該第二較佳實施例所;成 11 I299580 的粗糖:表面2 21，其中，附件一所顧+沾 1丨 nj丨卞 W顯不的不規則錐狀體主要 是由{ιοί个及{ιΐ叫相互配合所構成。 〈第三較佳實施例〉 芩閱圖5,本發明側向取光率高的固態發光元件之一第 三較佳實施例，大致上是與該第一較佳實施例相同（即，呈 正向取光的結構），其不同處僅在於該第一、二型半導體區 312、313分別是- p型半導體區及—n型半導體區；該透 明單晶基材2是經由晶圓鍵合技術與該發光晶體31接合， 且該透明單晶基材2的傾斜圍繞面23具有―連接該第:側 部22的傾斜圍繞面區231及一連接該傾斜圍繞面區231並 垂直地朝向該第一側部21延伸且與第一側部Μ連接的垂 直圍繞面區232。該垂直圍繞面區232是與該發光晶體3ι 的圍繞面311相互切齊’且該傾斜圍繞面區231是選丘自於 下列所構成之群、组：卜1$、|iioi|及|uk|。 在本發明該第三較佳實施例的製作過程中，大致上是 與該第日-較佳實施例相同’其$同處僅在於該透明單晶^ 材2是以晶圓鍵合技術與該發光晶體31接合。參閱圖6: 本發明該第三較佳實施例，是簡單地說明於下。 ' 、首先，利用相同於該第一較佳實施例之pECVD製程、 “，钱刻及清洗流程，以依序地於—藍寶石基板⑽上形成 箪匕夕膜61並完成濕式蝕刻，進而於該藍寶石基板6〇 上疋我出複數傾斜圍繞面β 〇 1。 一 進一步地， 例中蟲製有該磊 移除該氧化矽膜61，並將該第一較佳實施 晶膜55之藍寶石基板5〇予以倒置，進而 12 1299580 藉由晶圓鍵合技術將該藍寶石基板6〇與該磊晶膜55接合 。值得-提的是’本發明該第三較佳實施例之晶圓鍵合技 術是可使用環氧樹脂（epoxy)、苯并環丁烯 (benZ〇CyCl〇bUtene ’簡稱 BCB)及聚亞醯氨（p〇lyimide，簡 稱PI)等黏著膠。 於完成晶圓鍵合技術之後，利用雷射剝離法(La· Hft-off)將該藍寶石基板5〇予以移除。 進一步地，利用乾式蝕刻法於該第一型半導體層52、 多重量子井層53及第二型半導體層51上定義出複^分別 ^，有。一 n型半導體區52，，及—P財導體區54”的發光晶體 一利用該電子束蒸《統分別在每-發光晶體55，，的〇型 半導體區52”形成一透明歐姆接觸層57，，並於每一發光晶 體55’、’的該等透明歐姆接觸層57，及p型半導體區上： 別^^成一接觸電極5 8 ’。畏接，刹田 楚，取後利用雷射以切割出本發明該 車父佳貫施例之側向取光率高的固態發光元件（如圖5所 示）。 …在本發明該第三較佳實施例的製作流程中，不僅 、"對位的製作流程，此外，水平導通(horizontal =ghQut)式的結構，使得適詩本發明之晶 :黏靖擇性較高，因此，相對前揭美國專利的製作 :本@明以三較佳實施例於製作過程中較 〈弟四較佳實施例> 參閱圖7,本發明側向取光率高的固態發光元件之一第 13 l29958〇 四較佳實施例，大致上是與該第三較佳實施例相同，並不 问處僅在於該第四較佳實施料呈覆晶結構，因此，該第 四，佳實施例更包含-散熱單元4，，且該透明單晶基材2 :弟二侧部22具有-粗糙表面221，。該散熱單元4,具有一 政熱塊41’、至少二焊墊42’及至少二分別連接該散熱塊41， 的導線43’。每-焊墊42,連接其所對應的導線43，與該固態 發光件3的接觸電極33。The surface U 疋 由 is composed of the transparent single crystal substrate 2 适用 I suitable for the transparent single etch of the present invention. And fossil Zhan) its t 2 is sapphire (Qing (four) and carbon in the first preferred embodiment, this product 4 transparent early crystal substrate 2 is sapphire, contrary to the first and second type semiconductor area 312 hurricane According to Beishi, there is a η-type 舻γ and a Ρ-type semiconductor region. In the present invention, since the transparent yttrium is applied to the sapphire, the inclined surrounding surface 23 of the thirsty (four) wire 21 is applied. ... white a 4 (four), therefore, the inclined surrounding surface 23 is extended from the following group: f, {-" J factory 23 The transparent single crystal substrate 2 UM called {call; and, ... The horizontal cross-sectional area of the younger brother-side 21 is the horizontal level of the second side 22 of the younger brother, and the compensation is greater than the 忒 relationship, which is "stone:: product. There is a crystal surface of the sapphire of the present invention. In the definition of the structural unit ceU, the relevant definition has been revealed "(10)it cell) before the __ Shen Ren (4) Shen Zhongmin Republic of China. In the patent specification of the tiger, therefore, the invention is no longer added here. The clothing of the first preferred component, the fabric of the solid-state light-emitting element of the south of the first day, is simply described below. 3, the first service, #声约1?nn A; a supervised stone substrate 50 on the basis of a thickness, the force of 1 200 nm slow layer 51, a thickness of about 2000 first half moon beans (ie, η-type Feng Dao 1 ¥ ¥ body) layer 52, a multi-quantum well quantumwau, referred to as _-type semiconductor) layer 54 to construct & stone and brother-W conductor (ie, ρ 楫 into an epitaxial film 55 ' and The sapphire substrate 5〇1299580 is thinned to a thickness of about 200 jum. Further, plasma-assisted and plasma-nhanced CVD (PECVD) is used to assist with 4, enhanrpH π/η jin. π λλ ^ 俣垓 俣垓 俣垓 55 及 及 及 及 俣垓 俣垓 俣垓 俣垓 俣垓 俣垓 俣垓 俣垓 俣垓 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 蓝 ; ; 俣垓 俣垓56 圄 TF TF1 soil -, the geometrical case of the number of square holes (not shown), and in the first preferred wire + old 舢忐, also in the case, the ruthenium film face to the aunt Heat treatment to increase the adhesion between the oxidation and the sapphire substrate 5, the stone itself, and the adhesion between the 攸 说 说 。 。 55. The sapphire substrate 5 covered with the oxidized stone film 56 and the heart, 55 are placed in a sulfuric acid (H2S〇4) and a dish acid (η engraving agent (volume ratio of 3: η is about qnnv recognized ^ ^ Each of the wet etching is performed at a temperature of about 300 C, and a plurality of inclined surrounding faces 501 are formed on the sapphire substrate 50. The detailed description of the financial converter of the (four) engraving agent is also requested by the inventor. Apply for the patent specification of the No. 951G69 (four) request number of the Republic of China. After the wet type is completed, the sapphire soil plate 50 and the spectator film 55 coated with the oxygen cut film 56 are sequentially immersed in a hydrochloric acid (HC1) water-cooled liquid having a volume concentration of 5% by weight, and the boiled king. Water (called (10) and deionized water to separately remove the oxygen cut film 56 and complete the cleaning process. Further, after the cleaning process is completed, a plurality of knives are defined on the epitaxial film 55 by dry etching. The light-emitting crystal 55' of the -n-type semiconductor region 52 and the __p-type semiconductor region is formed. The p-type semiconductor region 54 of each of the light-emitting crystals 55 is respectively formed by an electron beam plating system (e-beam evaporation system). Forming a transparent ohmic contact layer 57 of nickel (Νι)/gold (Au), and the transparent ohmic contact layer and the (four) semiconductor region of each of the light emitting 10 l29958 body 55, Contact electrode 58. Finally, the laser is used to cut the present invention. The solid-state light-emitting element with high lateral light extraction rate of the preferred embodiment (as shown in FIG. 2 is the first preferred embodiment of the present invention). & 仫 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The method for fabricating the Wu Guo patent is disclosed, and the first preferred embodiment is relatively simple in the manufacturing process. Further, the second preferred embodiment is described in FIG. 4 'the side light having high lateral light extraction rate. The second preferred embodiment of the component is substantially the same as the first preferred embodiment, except that the second preferred embodiment is a flip-chip (1) core P that is facing away from the light. 4, a preferred embodiment further comprises a heat-dissipating single transparent single-crystal substrate 2, the second side portion 22 has a thick chain surface 221, the heat guide 4 has - heat-dissipating block 4, at least two pads ^ and at least two The wire 43 of the heat dissipating block 41. Each of the pads 42 is connected; the wire 43 is in contact with the contact electrode of the solid state light emitting member 3. Fig. 3 'In the manufacturing process of the second preferred embodiment, substantially The preferred embodiment of the haidi is the same, except that the oxidation of the surface under the surface of the Μ Μ 6 6 ( ( ( ( ( ( ( ( ( ( ( 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 , its own and low adhesion 'Therefore, the application of wet weaving = also tends to be caused by the oxidation ... 舆 sapphire base: 22 Saki The surface of the thick wheel of the second preferred embodiment should be formed, the pain piece, the attachment - showing the second preferred embodiment; the raw sugar of 11 I299580: surface 2 21, wherein the attachment is The irregular conical shape which is not shown by n丨nj丨卞W is mainly composed of {ιοί and {ιΐ 相互 相互 。 。 。 。 。 。 。 。 。 。 。 。 。 。 芩 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧 侧A third preferred embodiment of a high solid state light emitting device is substantially the same as the first preferred embodiment (i.e., a structure that takes forward light extraction), differing only in the first and second type semiconductor regions. 312 and 313 are respectively a p-type semiconductor region and an n-type semiconductor region; the transparent single crystal substrate 2 is bonded to the luminescent crystal 31 via a wafer bonding technique, and the slanted surrounding surface of the transparent single crystal substrate 2 23 has a slanted surrounding surface area 231 connecting the first side portion 22 and a vertical surrounding surface area 232 connecting the inclined surrounding surface area 231 and extending perpendicularly toward the first side portion 21 and connected to the first side portion Μ . The vertical surrounding area 232 is aligned with the surrounding surface 311 of the illuminating crystal 3 ι and the slanted surrounding area 231 is a group or group consisting of the following: Bu 1$, |iioi| and |uk |. In the manufacturing process of the third preferred embodiment of the present invention, it is substantially the same as the first day-best embodiment. The same is only in the case where the transparent single crystal material 2 is bonded by wafer bonding technology. The luminescent crystal 31 is joined. Referring to Figure 6: This third preferred embodiment of the present invention is briefly described below. First, using the same pECVD process, "money engraving and cleaning process" as in the first preferred embodiment, sequentially forming a film 61 on the sapphire substrate (10) and performing wet etching, The sapphire substrate 6 is slanted around the surface β 〇 1. Further, in the example, the sapphire film 61 is removed by the worm, and the sapphire substrate of the first preferred crystal film 55 is removed. 5〇 is inverted, and then 12 1299580 is bonded to the epitaxial film 55 by wafer bonding technology. It is worth mentioning that the wafer bonding technique of the third preferred embodiment of the present invention is It is possible to use adhesives such as epoxy, benzocyclobutene (BCZ) and p〇lyimide (PI). After completion of wafer bonding technology The sapphire substrate 5 is removed by a laser lift-off method (La·Hft-off). Further, the first type semiconductor layer 52, the multiple quantum well layer 53, and the second type semiconductor layer are dry-etched. 51 defines a complex ^ respectively, there is an n-type semiconductor region 52 And the light-emitting crystal of the "P-conductor region 54" is formed by the electron beam to form a transparent ohmic contact layer 57 in each of the germanium-type semiconductor regions 52 of each of the light-emitting crystals 55, and is illuminated at each The transparent ohmic contact layer 57 of the crystal 55', 'and the p-type semiconductor region: do not form a contact electrode 5 8 '. 畏 ,, 刹田楚, after taking the laser to cut the car of the present invention A solid-state light-emitting element having a high lateral light extraction rate (as shown in FIG. 5) is used in the parent embodiment. In the production process of the third preferred embodiment of the present invention, not only the "alignment process; In addition, the horizontally-conducting (horizontal = ghQut)-type structure makes the crystal of the invention of the present invention: the adhesion is relatively high, and therefore, the production of the prior patent is compared with the prior art in the production process. [Comparative Embodiments of the Fourth Embodiment] Referring to FIG. 7, a preferred embodiment of the solid-state light-emitting element having a high lateral light extraction rate of the present invention is substantially the same as the third preferred embodiment. The same, it is not only that the fourth preferred embodiment has a flip chip structure, because The fourth embodiment further includes a heat dissipating unit 4, and the transparent single crystal substrate 2 has a rough surface 221, and the heat dissipating unit 4 has a thermal block 41'. At least two pads 42' and at least two wires 43' respectively connected to the heat dissipation block 41. Each of the pads 42 is connected to a corresponding wire 43 and a contact electrode 33 of the solid state light-emitting member 3.
再茶閱® 6，在該第四較佳實施例的製作過程中，大致 f是與該第三較佳實施例相同，其不同處僅在於，位於該 監寶石基板6G之下表面的氧切膜61是未施予高溫熱處 =’因此，於施予濕式蝕刻的過程中蝕刻劑亦傾向於由該 乳化石夕膜61與該藍寶石基板6G的介面間產生㈣反應， 並幵/成5亥弟四較佳實施例的粗糙表面221，。 〈分析數據〉 參閱圖8,由電壓對電流之曲線圖([!)顯示可知，完 $覆晶結構前的第二較佳實施例於2〇 時所取得的正向 電壓(Ward voltage)值約為2·85 v，相近於無傾斜圍繞 面之傳統結構於20 mA時所取得的正向電麼值（2·以v)。 頌然’本發明该第二較佳實施例中的發光晶體W並未因為 對该透明單晶基材2施^濕式㈣反應而有所損害。 參閱圖9，由發光強度對注入電流（injecti〇n 咖贈）之曲線圖α_η顯示可知，完成覆晶結構前的第二 較佳實施例於2G fflA時所取得的發光強度與傳統結構雖然 相近(即，正向發光強度）’但隨著注入電流值的增加，完 14 Ϊ299580 烕復晶結構前的第二較佳實施例之發光強度 的發光強度顯著地增加。另，由圖9的顯示可知：構 較佳實施例於2GmA時所取得的發光強度，是相對 晶結構的發光強度增加約犯％。 、、、先伋 由前述圖9的析數據可知，在本發明該第二較佳實施 例於未兀成復晶結構之前的幾何外觀結構中，自該發光曰 ::傳遞至該透明單晶基材2方向的光子可藉由該透二 ^材2的傾斜圍繞面23以降低全反射臨界角，並有效地 利用側向光源進而提昇固態發光元件的外部量子效率。 奋/匕:，在本發明該第二較佳實施例中，因該第二較佳 晶結構之背向取光型態’因此，自該發光晶 版 纟的光子不僅未受到該等接觸電極33的阻撞， 且，因該第二較佳實施例中所使用的藍寶石基材之折身^ 車父该發光晶體31(即，以GaN為主的半導體材料）低，而使 得光子於行進過程中的全反射臨界角得以降低；再者，拜 该傾斜圍繞面23及粗糖表面221亦進一步地優化光源於行 進過程中的全反射環境，因此，本發明該第二較佳.實施例 可有效地將側向光源貢獻於的外部量子效率上，以使得其 發”度是相對傳統覆晶結構的發光強度增加約62 %。” 〃閱圓10 ’為Trace-Pr〇模擬軟體所取得之傳統覆晶 結構與該第二較佳實施例的燭光分布圖（eandeia卿），其 " 〗同樣疋以5 〇⑽道光束行進於發光晶體内並以1 〇 的光功率、折射率（η值）與吸收係數^值），分別作為無 傾料圍、'面之傳統覆晶結構與該第二較佳實施例之模擬過 15 !299580 程中的設定條件，以比較傳統覆 例於不同幾何外觀的模擬條件下之燭光;:布差 10的顯不可知，兩者相比較下，該第二較佳實施例的最大 濁光（Max. Candela)是每立體角為〇?5毫瓦（即，ο” — Si〇 $顯大於傳統覆晶結構所取得的最大燭光（〇 〇 mW/sr) 〇 · 芩閱圖1卜由光輪出功率對注入電流曲線圖（P-D顯示 :知，完成封裝後的傳統覆晶結構於2Q⑽時所取得的光 輪出功率約為9.3 mW，反觀本發明該第：較佳實施例在完 成封裝後於2〇 _時所取得的光輸出功率則可達U.2 mW。 在本發明該第二較佳實施，例中，該透明單晶基材2之傾斜 ，繞面23及粗糙表面221可有效地將側向光源貢獻於外部 里子效率，以取得優異的光輸出功率值。 1圖12由不同幾何結構之光輸出功率曲線圖顯示 可知，在相同的注人電流條件下，結構卜結構2與結構3 々光輸出功率为別約為l 8 mW、3· 2 _與3· 8 。 —由圖12的分析數據可知，在本發明該第二及第四較佳 :把例的幾何外觀設計中，該傾斜圍繞面23(該傾斜圍繞面 ，―23”是經由濕式M刻構成，因此，由{繼卜卜^及 f叫等晶面族中所提供的反射面亦較多，並可優化光“ ^丁 =過耘中的全反射環境致使側向光源可有效地貢獻於外 里子效率上，此外，藉由該粗糙表面22丨更可進一步地 提供約16 %的光輸出功率。 上所述’本發明側向取光高的固態發光元件可提供 16 1299580 適當之晶粒外翻嫌/ 光子使㈣11發光元件所產生的 時：:、:何結構以有效地增加側向光子的取光率，同 ，衣-矛王車父為簡易，碎實達到本發明之目的。 能以Γ:士所述者’僅為本發明之較佳實施例而已，當不 :、疋本發明實施之範圍，即大凡依本發明申枝專利 .範圍及發明今明向— 4义/3甲5月專利 p + 内谷所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 乂飾白仍 【圖式簡單說明】 揭霹m—正視示意圖’說明美國帛62291 6◦號專利所 匕。圖文。側向光取出率的半導體發光元件； 態發L2件視示意圖，說明本發明側向取光率高的固 牛之弟一較佳實施例； 簡易L乍3^~;簡易製作流程圖’說明該第—較佳實施例之 態發=/之=視=土圖’說明本發明側向取光率高的固 卞心弟一較佳實施例； 圖 5 是一 目-立r-n 疋正視不思圖，說明本發明側向取光率高的固 悲^先凡件之—第三較佳實施例； 圖6是—簡易製作流程圖，說明本發明該者 施例之簡易的製作流程； —早乂佺貝 m 7 4· — X 'a « 疋-正視示意圖，.說明本發明側向取光率高 悲魚先兀件之一第四較佳實施例； 圖8是—電壓對電流（V-I)之曲線圖； 圖9疋一發光強度對注入電流（L-I)之曲線圖； 17 1299580 圖10是一 Trace-Pro模擬軟體所取得的燭光分布圖； 圖11是一光輸出功率對注入電流（P-1)曲線圖；及 圖12是一不同幾何結構之光輸出功率曲線圖。 附件一：說明該第二較佳實施例在經過濕式蝕刻之後 ，於一透明單晶基材之一第二側部所留下之粗糙表面的顯 微結構。In the manufacturing process of the fourth preferred embodiment, substantially f is the same as the third preferred embodiment, and the difference is only in the oxygen cutting on the lower surface of the gemstone substrate 6G. The film 61 is not subjected to high temperature heat = ' Therefore, during the application of the wet etching, the etchant also tends to generate a (four) reaction between the emulsified stone film 61 and the interface of the sapphire substrate 6G, and The rough surface 221 of the preferred embodiment of the 5th Hei. <Analysis data> Referring to Fig. 8, the voltage vs. current graph ([!) shows that the Ward voltage value obtained at 2 前 in the second preferred embodiment before the flip-chip structure is completed. It is about 2.85 v, which is similar to the positive value obtained by the conventional structure without tilting around the surface at 20 mA (2·v). The light-emitting crystal W in the second preferred embodiment of the present invention is not damaged by the wet-type (four) reaction of the transparent single crystal substrate 2. Referring to FIG. 9, the graph of the illuminance intensity versus the injection current α_η shows that the illuminance obtained in the second preferred embodiment before the completion of the flip-chip structure is similar to that of the conventional structure. (i.e., forward luminescence intensity) 'But as the value of the injection current increases, the luminescence intensity of the luminescence intensity of the second preferred embodiment before the completion of the 14 Ϊ 299 580 烕 polycrystal structure is remarkably increased. Further, from the display of Fig. 9, it is understood that the luminous intensity obtained by constructing the preferred embodiment at 2 GmA is an increase in the luminous intensity of the crystal structure. According to the data of the foregoing FIG. 9 , in the geometric appearance structure of the second preferred embodiment of the present invention before the polycrystalline structure is formed, the light-emitting 曰:: is transmitted to the transparent single crystal. The photons in the direction of the substrate 2 can surround the face 23 by the tilt of the transparent material 2 to lower the critical angle of total reflection, and effectively utilize the lateral light source to enhance the external quantum efficiency of the solid state light emitting element. In the second preferred embodiment of the present invention, the photons from the luminescent plate are not only not subjected to the contact electrodes due to the back-lighting pattern of the second preferred crystal structure. The collision of 33, and because of the folding of the sapphire substrate used in the second preferred embodiment, the illuminating crystal 31 (i.e., GaN-based semiconductor material) is low, so that the photon is traveling. The critical angle of total reflection is reduced in the process; further, the inclined surrounding surface 23 and the rough surface 221 further optimize the total reflection environment of the light source during traveling. Therefore, the second preferred embodiment of the present invention can Effectively contributes the lateral quantum light to the external quantum efficiency such that its intensity is about 62% greater than that of a conventional flip-chip structure.” 〃阅圆10' is a Trace-Pr〇 simulation software. The conventional flip-chip structure and the candlelight distribution map of the second preferred embodiment (eandeia), which are similarly traversed by a 5 〇 (10) beam in the illuminating crystal with an optical power of 1 、 and a refractive index (η) Value) and absorption coefficient ^ value), respectively For the non-dipping, 'face conventional flip-chip structure and the simulated conditions of the second preferred embodiment of the simulated 15!299580 process, to compare the candlelight under the simulated conditions of different geometrical appearances; The difference of the difference of 10 is indistinguishable. Compared with the two, the maximum turbidity (Max. Candela) of the second preferred embodiment is 毫?5 mW per solid angle (ie, ο" - Si〇$ The maximum candlelight (〇〇mW/sr) obtained by the conventional flip-chip structure 〇· 图 图 由 由 由 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光The obtained light wheel output power is about 9.3 mW, and in view of the present invention, the light output power obtained by the preferred embodiment at 2 〇 after the package is completed can reach U.2 mW. Preferably, in the example, the tilting of the transparent single crystal substrate 2, the winding surface 23 and the rough surface 221 can effectively contribute the lateral light source to the external neutron efficiency to obtain an excellent light output power value. The light output power graph of different geometries shows that the same injection is made. Under the flow condition, the output power of the structure structure 2 and the structure 3 is about 18 mW, 3·2 _ and 3.8. - From the analysis data of Fig. 12, the second and fourth in the present invention. Preferably, in the geometric design of the example, the inclined surrounding surface 23 (the inclined surrounding surface, "23" is formed by a wet M engraving, and therefore, is carried out by the {following and f-called crystal face family The reflective surface is also provided, and the total reflection environment in the light can be optimized, so that the lateral light source can effectively contribute to the outer neutron efficiency, and further, the rough surface 22 can further Providing about 16% of the light output power. The above-mentioned solid-state light-emitting element with high lateral light extraction can provide 16 1299580 suitable grain valgus/photon (4) 11 light-emitting elements::,: The structure is effective to increase the light extraction rate of the lateral photons, and the same is the purpose of the present invention. The present invention can be used only as a preferred embodiment of the present invention. When not, the scope of the present invention, that is, the scope of the invention and the invention of the present invention. The simple equivalent changes and modifications made by the May patent p + Neigu are still within the scope of the invention patent.乂 乂 white still [schematic description of the simple] 霹 m - front view ‘illustrated the United States 帛 62291 6 专利 patent 匕. Graphic. A semiconductor light-emitting device with a lateral light extraction rate; a schematic diagram of a state of the L2 device, illustrating a preferred embodiment of the solid-state light-collecting method of the present invention; a simple L乍3^~; - The preferred embodiment of the present invention = / = = = soil map 'Describes a preferred embodiment of the present invention for high lateral light extraction rate; Figure 5 is a one-line rn 疋 疋 不 , , , , , , A third preferred embodiment of the present invention is a simple flow chart for illustrating the simple production process of the embodiment of the present invention; m 7 4· — X 'a « 疋-front view, illustrating a fourth preferred embodiment of the lateral light extraction rate of the present invention; FIG. 8 is a curve of voltage versus current (VI) Fig. 9 is a graph of luminous intensity versus injection current (LI); 17 1299580 Fig. 10 is a candle light distribution obtained by a Trace-Pro simulation software; Fig. 11 is an optical output power versus injection current (P-1) The graph; and Figure 12 is a graph of light output power for a different geometry. Annex I: illustrates the microstructure of the rough surface left on the second side of a transparent single crystal substrate after wet etching after the second preferred embodiment.
18 129958018 1299580
【主要元件符號說明】 2……， …》透明早晶基材 43，··" •…導線 21…… ……第一側部 5 0…… …，監實石基板 2 2， ……第二侧部 5(H… …·傾斜圍繞面 221… …·粗植表面 51..... …·緩衝層 221，… ，…粗植表面 52 ••… •…第一型半導體層 2 3 …* …·傾斜圍繞面 52,…· ♦…η型半導體區 231 - …♦傾斜圍繞面區 52”…· •…Ρ型半導體區 232… •…垂直圍繞面區 53 ♦•… •…多重量子井層 3……… s…固態發光件 54..... •…第二型半導體層 31"，*** …發光晶體 54,…. •…Ρ型半導體區 31卜… …圍繞面 54”…. •…η型半導體區 31 2 ” … …第一型半導體區 55 "… …*证曰曰膜 313… …第二型半導體區 55、… •…發光晶體 3 2…^ … …透明歐姆接觸層 55”…· …·發光晶體 3 3……… …接觸電極 56 … ，…氧化矽膜 …散熱單元 57 •…· …·透明歐姆接觸層 …散熱單元 57,…* •…透明歐姆接觸層 4卜…… …散熱塊 58…" …·接觸電極 41，…… …散熱塊 58，·… *…接觸笔極 42…… …焊墊 6〇 ·…· •…藍寶石基板 42,…… …焊墊 601 ·*· •…傾斜圍繞面 13 ******* …導線 61…… …氧化碎膜 19[Description of main component symbols] 2..., ..." transparent early crystal substrate 43, ····quot; wire 21.........first side part 5 0... ..., supervised stone substrate 2 2, ... Second side portion 5 (H... ... inclined surrounding surface 221 ... ... rough surface 51..... buffer layer 221, ..., ... rough surface 52 ••... •...first type semiconductor layer 2 3 ...* .... inclined surrounding surface 52, ... ♦ ... η-type semiconductor region 231 - ... ♦ tilt around the surface area 52" ... ... ... ... Ρ type semiconductor region 232 ... ... ... vertical surrounding area 53 ♦ • ... •... Multiple quantum well layers 3.........s...Solid light-emitting elements 54.....•...Second-type semiconductor layer 31",***...Light-emitting crystals 54,.......Ρ-type semiconductor regions 31... Face 54"....•...n-type semiconductor region 31 2"...first-type semiconductor region 55 "...* proof film 313...second-type semiconductor region 55,...?...light-emitting crystal 3 2...^ ... transparent ohmic contact layer 55"...··· luminescent crystal 3 3... contact electrode 56 ..., yttrium oxide film ... heat sink unit 57 ...·...·transparent ohmic contact layer...heat dissipation unit 57,...*•...transparent ohmic contact layer 4...heat dissipation block 58..." ... contact electrode 41, ... heat sink block 58, .... Pen pole 42.........pad 6〇····...sapphire substrate 42,...solder pad 601 ·*· •...inclined surrounding surface 13 ******* ... wire 61... ...oxidized chip 19