1320295 * » 九、發明說明： 【發明所屬之技術領域】 本心明係一種具浮動式電源驅動器（p〇wer driver)之燈管驅動電路，尤指一種以常壓製程製造出之 個別積體電路7C件分別控制高、低壓側驅動電晶體之燈管 驅動電路。 【先前技術】 用電流互感器之驅動電路， 60) ’該電路包含一連接 開關（6 1 )、一電流互感 導體場效電晶體（M0SFET)構 4 )。該電流互感器（6 2 ) 〇)串聯，而其二次側繞組 )(6 4 )連接，該燈管（6 及電容（66)(67)構 )的另一端則是連接電流互 關（δ 1 )導通後提供一脈 @ ’其振盪頻率即為電感（6 譜振頻率。更具體而言，當 電路便保持振盪而—高頻激 兩端的電壓由於電路q諧振 燈管（6 〇 )產生放電。 雙極性電晶體構成，再經修1320295 * » Nine, invention description: [Technical field of invention] This is a lamp driving circuit with a floating power driver, especially an individual integrated body manufactured by a constant pressing process. The circuit 7C controls the lamp driving circuit of the high and low side driving transistors, respectively. [Prior Art] Using a drive circuit of a current transformer, 60) 'The circuit includes a connection switch (6 1 ), a current mutual inductance conductor field effect transistor (M0SFET) 4). The current transformer (6 2 ) 〇) is connected in series, and its secondary winding (6 4 ) is connected, and the other end of the tube (6 and the capacitor (66) (67) is connected to each other ( δ 1 ) After the conduction, provide a pulse @ 'the oscillation frequency is the inductance (6 spectral frequency. More specifically, when the circuit keeps oscillating - the voltage at both ends of the high-frequency excitation due to the circuit q resonance lamp (6 〇) Produces a discharge. Bipolar transistor is constructed and repaired
請參閱第六圖所示，為使 可用於驅動一氣體放電燈管（ 在直流（DC)輸入端的雙向觸發 器（62)、兩金屬氧化物半 成的功率電晶體（6 3 ) ( 6 的一次側繞組提供與燈管（6 係與前述兩功率電晶體（6 3 0)係串接一由電感（6 5) 成的LC電路，該電容（6 6 感器（6 2 )的一次側繞組。 如述電路係由雙向觸發開 衝電流使電路開始進入振盪狀 5)與電容（6 6)所構成的 功率電晶體（6 4 )導通後’ 發s玄LC電路。電容eg?) 而被放大，使電壓值足以觸發 由於前述驅動電路原是以 4 132.0.295 改设计而以金屬氣化物ύ: ^ BA |〇 虱化物丰導體輪效電晶體（M0SFET )組成， 惟其電路架構實際上並不適合 e ^ ^ &、。MOSFET，原因在於其波形不 佳。 清參考第七圖，供於箭、+、 血於則述電路的缺點，於美國第 5，545, 955號專利幸中伤裎φ ^ 尔甲係挺出—種適用於M0SFET的驅動積 體電路 υ ； 忒驅動積體電路（70)具有 —南壓輸出端（Ho)及一低Μ私山山"、 低&輸出端（Lo)，係分別連接兩功 率電晶體（63) ( R 4 Λ 4)，该驅動積體電路更有一輸出 端（Vs)連接兩電晶體（63) Γ 05 ; ( 6 4 )之串聯接點及一 ^ C電路與一氣體放電燈管（6〇)。 «氣體放電燈管（6〇)@工作原理可知當欲點亮 u :，必須要提供一極高的驅動電壓以激發該燈管工 作。實際上在該驅動積體電路（7〇)内冑，於高壓輸出 :(Η〇)與低壓輸出端的(L〇)兩者之間係具有一高壓 谷，其耐壓程度須高達數百伏# ^ 六〇 伙特以上，由於該高壓耦合電 ^的存在，該驅動積體電路（7〇)&半導體原料 …件設計、電路佈局等各方面都必須考慮高 私’如此一來其製程的複雜声月制、土 衣 復雑度及製造成本都將相對提高。 【發明内容】 由前述說明可,。，現有驅動燈管所用之 4壓製程製造，而使成本及複雜度始終居高不下。 本發明之主要目的係提供一種以常壓 電路來椹占蛛爲夕矛呈衣&之積體 、成 動電路，以降低電路之製造成本。 為達成前述目的，本發明係包含： 5 1320295 一微處理單元，係為一獨立之積體電路元件且至少具 有一低側驅動脈衝輸出接腳及兩控制信號輸出接腳； 一浮動式電源驅動器，係為一獨立之積體電路元件且 透過兩獨立的高壓耦合電容耦接至前述微處理單元的兩控 制信號輸出接腳，該浮動式電源驅動器不與微處理單元共 用相同接地，具有至少一高側驅動脈衝輸出接腳； 一驅動單元，係連接於一驅動高壓及一接地之間，受 前述微處理單元及浮動式電源驅動器控制而點亮一燈管。 前述驅動單元可為一全橋架構或半橋架構，若為全橋 架構則包含兩高側功率電晶體及兩低側功率電晶體，前述 微處理單元提供兩支低側驅動脈衝輸出接腳連接低側功率 電晶體，該浮動式電源驅動器亦提供兩支高侧驅動脈衝輸 出接腳連接高側功率電晶體。 若前述驅動單元為一半橋架構，則包含一高側功率電 晶體及一低側功率電晶體，高側功率電晶體係連接該驅動 高壓及該浮動式電源驅動器的高側驅動脈衝輸出接腳；低 側功率電晶體係串接該高側功率電晶體與接地之間，同時 該低側功率電晶體亦連接微處理單元之低側驅動脈衝輸出 接腳。 前述高側功率電晶體與低側功率電晶體可由雙極型 (BIPOLAR)電晶體或金屬氧化物半導體場效電晶體（M0SFET) 構成。 【實施方式】 請參閱第一圖，本發明的燈管驅動電路中係使用一浮 6 1320295 動式電源驅動器（1〇)及一耦接該浮動式電源驅動器的 微處理單元（MCU)(20)，由兩者共同控制一驅動單元 (30)，該驅動單元（30)係連接一燈管（4〇)的 兩端。該微處理單元（2 0 )亦可以為一通用的脈寬調節 控制積體電路（pulse width modulation control circuits)(例如TL494CD)，為求降低成本可將此微處理單 元（2 0 )設計開發成為一專用！ c(AS丨c)。Please refer to Figure 6 for the purpose of driving a gas discharge lamp (a bidirectional trigger (62) at the DC (DC) input, a two-metal oxide semi-powered transistor (6 3 ) (6 The primary side winding is provided with a lamp tube (6 series and the aforementioned two power transistors (630) are connected in series with an LC circuit formed by an inductor (6 5), and the capacitor (the primary side of the 6 6 sensor (6 2 )) Winding. As described above, the circuit is triggered by the bidirectional triggering of the current to make the circuit start to oscillate. 5) After the power transistor (6 4 ) formed by the capacitor (6 6) is turned on, the singular LC circuit (capacitor eg?) It is amplified to make the voltage value sufficient to trigger. Because the above-mentioned driving circuit was originally designed to be modified by 4 132.0.295, it is composed of metal vapor ύ: ^ BA | 〇虱 丰 导体 导体 导体 导体 导体 , , , , , , , , , , , , , , , , , , , It is not suitable for e ^ ^ &, MOSFET, because its waveform is not good. Refer to the seventh figure for the shortcomings of the arrow, +, and blood, and the US 5,545, 955 patent.裎φ ^ 尔甲甲出出—A kind of driving integrated circuit suitable for M0SFET υ ; The moving body circuit (70) has a south voltage output terminal (Ho) and a low-voltage private mountain", a low & output terminal (Lo), which are respectively connected to two power transistors (63) (R 4 Λ 4 The drive integrated circuit further has an output terminal (Vs) connected to the two transistors (63) Γ 05; (6 4) series contacts and a ^ C circuit and a gas discharge lamp (6 〇). Discharge lamp tube (6〇)@ working principle, we know that when we want to illuminate u:, we must provide a very high driving voltage to stimulate the lamp to work. Actually, in the driving integrated circuit (7〇), The high-voltage output: (Η〇) and the low-voltage output (L〇) have a high-pressure valley, and the withstand voltage must be as high as several hundred volts # ^ 六〇伙特, due to the existence of the high-voltage coupling The driver integrated circuit (7〇) & semiconductor raw materials... design, circuit layout, etc. must all consider high-privacy'. As a result, the complex acoustic system, soil reclamation and manufacturing costs of the process will be According to the foregoing description, the conventional driving lamp tube can be manufactured by using 4 press processes, and the cost and The main purpose of the present invention is to provide an integrated circuit for reducing the manufacturing cost of the circuit by using an atmospheric circuit to reduce the manufacturing cost of the circuit. The invention comprises: 5 1320295 a micro processing unit, which is a separate integrated circuit component and has at least one low side driving pulse output pin and two control signal output pins; a floating power driver is an independent The integrated circuit component is coupled to the two control signal output pins of the micro processing unit through two independent high voltage coupling capacitors. The floating power driver does not share the same ground as the micro processing unit, and has at least one high side driving pulse output. a driving unit is connected between a driving high voltage and a ground, and is illuminated by the micro processing unit and the floating power driver to illuminate a light tube. The driving unit may be a full bridge architecture or a half bridge architecture. If the full bridge architecture comprises two high side power transistors and two low side power transistors, the micro processing unit provides two low side driving pulse output pin connections. Low-side power transistor, the floating power driver also provides two high-side drive pulse output pins to connect the high-side power transistors. If the driving unit is a half bridge structure, comprising a high side power transistor and a low side power transistor, the high side power crystal system is connected to the driving high voltage and the high side driving pulse output pin of the floating power driver; The low side power transistor system is connected in series between the high side power transistor and the ground, and the low side power transistor is also connected to the low side driving pulse output pin of the micro processing unit. The aforementioned high side power transistor and low side power transistor may be composed of a bipolar type (BIPOLAR) transistor or a metal oxide semiconductor field effect transistor (M0SFET). [Embodiment] Please refer to the first figure. In the lamp driving circuit of the present invention, a floating 6 1320295 dynamic power driver (1〇) and a micro processing unit (MCU) coupled to the floating power driver are used. ), a driving unit (30) is jointly controlled by the two, and the driving unit (30) is connected to both ends of a lamp tube (4〇). The micro processing unit (20) can also be a general pulse width modulation control circuit (for example, TL494CD), and the micro processing unit (20) can be designed and developed to reduce the cost. A dedicated! c(AS丨c).
該驅動單元（3 0 )於本實施例中係由四顆雙極型 (BIPOLAR)功率電晶體（3 1 a)〜（34a)構成的全 橋架構，連接於一驅動高壓（如400v)及接地之間，其中功 率電晶體（3 la) (32a)連接該驅動高壓；其餘兩 電日日肋( 3 3 a )( 3 4 a )則負責低側驅動，係分別連 接功率電晶體（3 i a ) ( 3 2 a )及接地之間。該燈管 (4 0 )可為任何類型的節能燈或日光燈’係連接在全橋 架構的中間’即高側驅動與低側驅動之間。 前述浮動式電源驅動器（工〇)係具有兩支高側㈣ 脈衝輸出接腳（H0UT1 )(H0UT2)，分別透過電阻（ri)(r2)連 接全橋架構中的高側功率電晶體（3 1 a ) ( 3 2 a )的 基極端，處理單元（2 〇 )則提供兩支低側驅動脈衝 輸出接腳“〇un)(LOUT2)以連接該低側的功率電晶體（3 3 a ) ( 3 4 a ) 〇 浮動式電源驅動器（1 n )#且亡 初亞、丄υ Μπ具有兩支耦合輸出接腳， 該耦合接腳係分別連接到兩高壓耦合電容（c丄八C 2 )， 透過該高廢叙合電容（Gl') ( r η \ λ j 电今、L丄）（C 2 )連接到微處理單元 7 1320295 (20)的兩控制信號輸出接腳，高壓耦合電容（〇工） (C 2 )可選用耐壓4〇〇 v以上的電容器以提供高壓隔離 效果。 。月參考第一圖，該洋動式電源驅動器（^ )係以 製程製為-積體電路，内部邏輯元件設計如圖所示，包含 比及運具放大電路’該浮動式電源驅動器（1 〇)主 要接腳包括有： —電源接腳（VDD)，^ ^ )係連接一直流電源以提供該浮動 » Q 1 ◦)之工作電壓，例如DC 8〜15V ; 二負電源接腳⑽，係為—高壓系電流的負端，在驅 早凡（3 ◦)採用-半橋結構時，係連接至半橋 中間接點； —至少-高側驅動脈衝輪出接腳⑽UT1)，係用於驅動 -向側場效電晶體，圖中係顯示兩輸出接腳_ 以適用於全橋架構； _ =—錢信號輸人接腳⑽），係透過該高壓耗合 电合（C 1)與微處理單元（2〇)連接； —第一低廢信號輸入接腳（IΝ 2 )栌.# ·Α — a 安卿UW)知透過該高壓耦合電 (C 2 )與微處理單元（2 〇 )連接。 上述驅動電路的工作原理如下:該微處理單元（ =係有自振1功能’而其㈣信號亦透過兩高壓輕 谷（cn (C2)傳遞給浮動式電源驅動 ： =一來’該微處理單元（2〇)及浮動式電源驅動哭; ◦)可依據振堡信號適當地輸出控制信號予 二 8 1320295 (3 1 a )〜(3 4 a )，今古如从方 (32a)與低側功率電晶體：晶體（3… 替導通，使該驅動高厂堅能順利激二:（3“）呈交 昤估爾楚闽 兵冽教發燈官（4 0 )點亮。 除使用第-圖的雙極型功率電晶體（3丄a 4 a )之外，本創作的全橋電路架 _The driving unit (30) is a full-bridge structure composed of four bipolar (BIPOLAR) power transistors (31a) to (34a) in this embodiment, connected to a driving high voltage (such as 400v) and Between the grounding, the power transistor (3 la) (32a) is connected to the driving high voltage; the remaining two electric day ribs (3 3 a ) ( 3 4 a ) are responsible for the low side driving, respectively connecting the power transistors (3 Ia ) ( 3 2 a ) and ground. The lamp (40) can be any type of energy saving lamp or fluorescent lamp that is connected between the high side drive and the low side drive in the middle of the full bridge architecture. The floating power driver (worker) has two high-side (four) pulse output pins (H0UT1) (H0UT2) connected to the high-side power transistors in the full-bridge structure through resistors (ri) (r2) (3 1 The base of a) (3 2 a ), the processing unit (2 〇) provides two low-side drive pulse output pins “〇un” (LOUT2) to connect the low-side power transistor (3 3 a ) ( 3 4 a ) 〇 floating power driver (1 n ) # and 初 亚, 丄υ Μ π has two coupled output pins, the coupling pin is connected to two high-voltage coupling capacitors (c 丄 eight C 2 ), Connected to the two control signal output pins of the micro processing unit 7 1320295 (20) through the high waste rectification capacitor (Gl') (r η \ λ j, L丄) (C 2 ), the high voltage coupling capacitor (〇 (C 2 ) Capacitors with a withstand voltage of 4〇〇v or more can be used to provide high-voltage isolation. According to the first figure, the ocean power supply driver (^) is manufactured by a process-integrated circuit, internal The logic component design is shown in the figure, including the ratio and the amplifier amplifier circuit. The floating power driver (1 〇) main pin includes There are: — power pin (VDD), ^ ^ ) is connected to the power supply to provide the floating » Q 1 ◦) operating voltage, such as DC 8~15V; two negative power pin (10), is - high voltage current The negative end is connected to the indirect point in the half bridge when the drive is used in the half bridge structure; at least the high side drive pulse wheel (10) UT1) is used for the drive-to-side field. Effect transistor, the figure shows two output pins _ for the full bridge architecture; _ = - money signal input pin (10)), through the high voltage consumption of electricity (C 1) and the microprocessor unit (2 〇) connection; — first low waste signal input pin (IΝ 2 ) 栌.# ·Α — a Anqing UW) It is known that the high voltage coupling (C 2 ) is connected to the microprocessor unit (2 〇). The working principle of the circuit is as follows: the microprocessor unit (= has the function of self-vibration 1) and its (4) signal is also transmitted to the floating power supply through two high-voltage light valleys (cn (C2): = one comes to the micro-processing unit ( 2〇) and floating power supply drive crying; ◦) According to the Zhenbao signal, the control signal can be appropriately output to 2 8 1320295 (3 1 a )~(3 4 a ), Gu Ru from the side (32a) and the low-side power transistor: crystal (3... for the conduction, so that the drive high factory can smoothly stimulate two: (3") submitted to the evaluation of the 闽 闽 闽 闽 冽 冽 冽 发4 0 ) Lights up. In addition to using the bipolar power transistor (3丄a 4 a ) of the first figure, the full bridge circuit frame of this creation _
的金屬氧化物半導體型（MQS) t U *二®所7F 圖）的功李電晶體（3 1 b )〜 …成’其動作原理如同第-圖實施例。The metal oxide semiconductor type (MQS) t U * II® 7F diagram) has the operation principle of the plume transistor (3 1 b ) ~ ... into the same as the first embodiment.
極i所示’該驅動單元（3 0 )係、利用兩雙 極型(刪LAR)功率電晶體（3 半橋架構，其中-功率電晶體（31 2 構成一 ::裔（1 0 )的高側驅動脈衝輸出接腳⑽UT1)所控 ’另一功率電晶體⑴由微處理單元（2〇) L低側驅動脈衝輸出接腳（LQUT2)控制，其中S功率電 (3 1 c ) ( 3 2 C )的串聯節點係連接該浮動式電 6、驅動器（1 0)的負電源接腳（vs)，該串聯節點亦透過 一觸發器（41)诖； 運接至燈官（4C))的一端，而燈管 0 )另端係接地。 該半橋架構的驅動單元（4〇)亦是設在—驅動高壓 乂士 31 0V )與接地之間。該浮動式電源驅動器（丄〇 )與 :處理單70 ( 2 0 )亦是交互送出驅動信號，令功率電晶 蛆（3lc) (32c)呈交替導通，使該驅動高壓透過 觸發器（41)啟動燈管（40)。 則述半橋電路中的雙極型功率電晶體（3工c ) ( 3 2 c )係可以改由金屬氧化物半導體型（M0S)的功率電晶 1320295 體（3“）（32d)所取代，如第^ r r., 弟五圖的貫施例所繪。 由以上四種不同態樣來看，本 積體雷A > 免月均疋以兩個獨立的 ^電路配合兩高壓耗合電容 種作法具有如下優點： 動-壓加以控制，此 在積體電吏用了獨立元件的高㈣合電容，而非整4 需以高…製造，僅彡 處理單元本^The pole i shows 'the drive unit (30), using two bipolar type (deleted LAR) power transistors (3 half-bridge architecture, where - power transistor (31 2 constitutes a:: (1 0) The high-side drive pulse output pin (10) UT1) is controlled by 'the other power transistor (1) is controlled by the micro-processing unit (2〇) L low-side drive pulse output pin (LQUT2), where S power (3 1 c ) ( 3 The series node of 2 C ) is connected to the negative power pin (vs) of the floating circuit 6 and the driver (10), and the series node is also transmitted through a trigger (41); and is connected to the lamp officer (4C). One end, while the lamp 0) is grounded at the other end. The drive unit (4〇) of the half-bridge structure is also located between the drive high voltage gentleman 31 0V and ground. The floating power driver (丄〇) and the processing unit 70 (20) also alternately send the driving signal, so that the power transistor (3lc) (32c) is alternately turned on, so that the driving high voltage is transmitted through the trigger (41). Start the lamp (40). The bipolar power transistor (3Cc) (3 2 c ) in the half-bridge circuit can be replaced by a metal oxide semiconductor type (M0S) power transistor 1320295 body (3") (32d). For example, ^ r r., the five examples of the five figures are drawn. From the above four different aspects, the original body A > free monthly average with two independent ^ circuit with two high pressure consumption The combined capacitor method has the following advantages: Dynamic-voltage control, which uses a high (four) combined capacitor of a separate component in the integrated power supply, instead of the whole 4, it needs to be manufactured in a high-order, only the processing unit.
使用現有的常壓製程（3V〜20V) 可’故其製造成本及難度可A幅降低。另—方面 -件型態的高壓麵合電容係可輕易取得，且成本極低。 :二用電：隔離電路設計：即該浮動式電源_ …者不共用同一個接地，且利用高壓州 谷達成南低壓區塊隔離，而使用兩個電容可確保從低壓对 (微處理單元)傳送到高壓端(浮動式電源驅動器）的_ 號，不會因為雜訊干擾而造成誤動作。 =·可適用多種電路架構：無論是全橋式或半橋式的 驅動早兀，洋動式電源驅動器配合微處理單元均可加以控 制，而且無論是雙極型（BIP〇LAR)或是金屬氧化物半導= 場效電晶體（M0SFET)皆可使用。 祖 【圖式簡單說明】 第一圖：係本發明驅動電路一實施例之電路圖。 第二圖：係本發明浮動式電源驅動器的内部電路方塊 第三圖：係本發明驅動電路另一實施例之電路巴 第四圖：係本發明驅動電路又一實施例之電路圖 10 1320295 第五圖：係本發明驅動電路再—實施例之電路圖。 第六圖.係一使用電流互感器的燈管驅動電路。 第七圖.係一使用驅動積體電路的燈管驅動電路。 【主要元件符说说明】 (1〇)浮動式電源驅動器 （20)微處理單元 (3 〇 )驅動單元 (3]_a)〜（34a)功率電晶體 (3lb)〜（34b)功率電晶體The existing normal press process (3V~20V) can be used, so the manufacturing cost and difficulty can be reduced. Another aspect - the high-voltage surface-capacitance of the part type can be easily obtained and the cost is extremely low. : Two power consumption: isolation circuit design: that is, the floating power supply _ ... does not share the same ground, and uses the high voltage state valley to achieve the isolation of the south low voltage block, and the use of two capacitors can ensure the low voltage pair (micro processing unit) The _ number transmitted to the high voltage side (floating power supply driver) will not cause malfunction due to noise interference. =·Applicable to a variety of circuit architectures: whether it is a full-bridge or half-bridge drive, the ocean power driver can be controlled with the microprocessor unit, and it can be bipolar (BIP〇LAR) or metal. Oxide semiconductor = field effect transistor (M0SFET) can be used. [After a brief description of the drawings] Fig. 1 is a circuit diagram of an embodiment of a driving circuit of the present invention. FIG. 2 is a circuit diagram of another embodiment of the driving circuit of the present invention. FIG. 4 is a circuit diagram of another embodiment of the driving circuit of the present invention. FIG. 10 1320295 Figure: is a circuit diagram of a driving circuit of the present invention. The sixth figure is a lamp driving circuit using a current transformer. Fig. 7 is a lamp driving circuit using a driving integrated circuit. [Main component description] (1〇) Floating power driver (20) Micro processing unit (3 〇) Drive unit (3]_a) ~ (34a) Power transistor (3lb) ~ (34b) Power transistor
(3 1 c ) ( 3 2 c )功率電晶體 (3 1 d ) ( 3 2 d )功率電晶體 (4〇)燈管 （41)觸發器 (6 〇 )燈管 （6 1 )雙向觸發開關 (6 2 )電流互感器 （ 6 3 ) ( 6 4 )功率電晶體 (65)電感 （66) (67)電容 (7〇)驅動積體電路 (c χ ) (C2)高壓耦合電容(3 1 c ) ( 3 2 c ) power transistor (3 1 d ) ( 3 2 d ) power transistor (4 〇) lamp (41) trigger (6 〇) lamp (6 1) bidirectional trigger (6 2 ) Current Transformer ( 6 3 ) ( 6 4 ) Power Transistor (65) Inductor (66) (67) Capacitor (7〇) Drive Integrated Circuit (c χ ) (C2) High Voltage Coupling Capacitor
(H〇uTl ) ( H〇UT2 )高側驅動脈衝輸出接腳 (L〇UTl ) ( L〇U丁2 )低側驅動脈衝輸出接腳 11(H〇uTl) (H〇UT2) High-side drive pulse output pin (L〇UT1) (L〇U丁2) Low-side drive pulse output pin 11