TWI322331B - - Google Patents
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- Publication number
- TWI322331B TWI322331B TW95114236A TW95114236A TWI322331B TW I322331 B TWI322331 B TW I322331B TW 95114236 A TW95114236 A TW 95114236A TW 95114236 A TW95114236 A TW 95114236A TW I322331 B TWI322331 B TW I322331B
- Authority
- TW
- Taiwan
- Prior art keywords
- pdms
- curved
- substrate
- pattern
- forming
- Prior art date
Links
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 53
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 239000002131 composite material Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 9
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 9
- 238000004049 embossing Methods 0.000 claims description 7
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003431 cross linking reagent Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 3
- -1 polydimethylsiloxane Polymers 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 15
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 14
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 14
- 239000013590 bulk material Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- KZRXTDVKMJQCBB-UHFFFAOYSA-N 4-octadecyltrioxane Chemical compound C(CCCCCCCCCCCCCCCCC)C1OOOCC1 KZRXTDVKMJQCBB-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 239000004033 plastic Substances 0.000 description 10
- 229920003023 plastic Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 235000006679 Mentha X verticillata Nutrition 0.000 description 1
- 235000002899 Mentha suaveolens Nutrition 0.000 description 1
- 235000001636 Mentha x rotundifolia Nutrition 0.000 description 1
- 241000237536 Mytilus edulis Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095114236A TW200741337A (en) | 2006-04-21 | 2006-04-21 | Method for imprinting 3-D circuit patterns on curved surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095114236A TW200741337A (en) | 2006-04-21 | 2006-04-21 | Method for imprinting 3-D circuit patterns on curved surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200741337A TW200741337A (en) | 2007-11-01 |
| TWI322331B true TWI322331B (fr) | 2010-03-21 |
Family
ID=45073941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095114236A TW200741337A (en) | 2006-04-21 | 2006-04-21 | Method for imprinting 3-D circuit patterns on curved surface |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200741337A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104360580A (zh) * | 2014-10-28 | 2015-02-18 | 北京航空航天大学 | 一种曲面上微结构滚压成型制造方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI414647B (zh) * | 2010-09-27 | 2013-11-11 | 私立中原大學 | 製作次微米圖樣化藍寶石基板之方法 |
| TWI672212B (zh) * | 2016-08-25 | 2019-09-21 | 國立成功大學 | 奈米壓印組合體及其壓印方法 |
| CN108008599B (zh) * | 2017-12-27 | 2024-01-26 | 青岛天仁微纳科技有限责任公司 | 用于三维曲面纳米级压印的方法、装置及模具制备方法 |
| CN112817209B (zh) * | 2020-12-28 | 2024-09-10 | 山东大学 | 一种可实现异形曲面压印的压印设备及使用方法 |
-
2006
- 2006-04-21 TW TW095114236A patent/TW200741337A/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104360580A (zh) * | 2014-10-28 | 2015-02-18 | 北京航空航天大学 | 一种曲面上微结构滚压成型制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200741337A (en) | 2007-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |