TWI353729B - - Google Patents

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Info

Publication number: TWI353729B
Authority: TW; Taiwan
Prior art keywords: pump circuit; potential; charge pump; circuit; positive potential
Prior art date: 2007-02-28

Application number

TW097105300A

Other languages

English (en)

Chinese (zh)

Other versions

TW200843347A (en

Inventor

Taiki Kimura

Kensuke Goto

Original Assignee

Sanyo Electric Co

Sanyo Semiconductor Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-02-28

Filing date

2008-02-15

Publication date

2011-12-01

2008-02-15 Application filed by Sanyo Electric Co, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co

2008-11-01 Publication of TW200843347A publication Critical patent/TW200843347A/zh

2011-12-01 Application granted granted Critical

2011-12-01 Publication of TWI353729B publication Critical patent/TWI353729B/zh

Links

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239000004065 semiconductor Substances 0.000 claims description 43
238000009792 diffusion process Methods 0.000 claims description 11
230000004888 barrier function Effects 0.000 claims description 3
238000004519 manufacturing process Methods 0.000 claims 1
239000003990 capacitor Substances 0.000 description 25
230000003071 parasitic effect Effects 0.000 description 16
238000010586 diagram Methods 0.000 description 15
102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 12
101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 12
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102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 9
102100040856 Dual specificity protein kinase CLK3 Human genes 0.000 description 9
101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 9
101000749304 Homo sapiens Dual specificity protein kinase CLK3 Proteins 0.000 description 9
101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 9
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101100508840 Daucus carota INV3 gene Proteins 0.000 description 7
102100037224 Noncompact myelin-associated protein Human genes 0.000 description 6
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102100026038 Lens fiber membrane intrinsic protein Human genes 0.000 description 4
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101150110971 CIN7 gene Proteins 0.000 description 3
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238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
235000013399 edible fruits Nutrition 0.000 description 2
230000005611 electricity Effects 0.000 description 2
229910044991 metal oxide Inorganic materials 0.000 description 2
150000004706 metal oxides Chemical class 0.000 description 2
206010011469 Crying Diseases 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
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229910052500 inorganic mineral Inorganic materials 0.000 description 1
230000016507 interphase Effects 0.000 description 1
239000011707 mineral Substances 0.000 description 1
238000005086 pumping Methods 0.000 description 1
APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
230000008439 repair process Effects 0.000 description 1
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Classifications

- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
- H02M1/009—Converters characterised by their input or output configuration having two or more independently controlled outputs
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/071—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate a negative voltage output from a positive voltage source

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Dc-Dc Converters (AREA)
Semiconductor Integrated Circuits (AREA)
Electronic Switches (AREA)

TW097105300A 2007-02-28 2008-02-15 Charge pump circuit TW200843347A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007049112A JP4925866B2 (ja)	2007-02-28	2007-02-28	チャージポンプ回路

Publications (2)

Publication Number	Publication Date
TW200843347A TW200843347A (en)	2008-11-01
TWI353729B true TWI353729B (2)	2011-12-01

Family

ID=39741039

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW097105300A TW200843347A (en)	2007-02-28	2008-02-15	Charge pump circuit

Country Status (5)

Country	Link
US (1)	US7583131B2 (2)
JP (1)	JP4925866B2 (2)
KR (1)	KR100922681B1 (2)
CN (1)	CN101272091B (2)
TW (1)	TW200843347A (2)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR101022106B1 (ko) *	2008-08-06	2011-03-17	삼성모바일디스플레이주식회사	유기전계발광표시장치
US7911261B1 (en) *	2009-04-13	2011-03-22	Netlogic Microsystems, Inc.	Substrate bias circuit and method for integrated circuit device
CN101867290A (zh) *	2010-06-17	2010-10-20	清华大学	低功耗电荷泵电路
KR101204569B1 (ko) *	2010-12-03	2012-11-23	에스케이하이닉스 주식회사	고전압 발생기 및 고전압 발생 방법
US8373497B2 (en) *	2011-01-11	2013-02-12	Infineon Technologies Ag	System and method for preventing bipolar parasitic activation in a semiconductor circuit
US9111601B2 (en) *	2012-06-08	2015-08-18	Qualcomm Incorporated	Negative voltage generators
KR102087111B1 (ko) *	2013-08-30	2020-03-10	에스케이하이닉스 주식회사	반도체 장치
JP2016009939A (ja) *	2014-06-23	2016-01-18	株式会社東芝	チャージポンプ、電位変換回路およびスイッチ回路
US9502971B2 (en) *	2014-10-30	2016-11-22	Mediatek Singapore Pte. Ltd.	Charge pump circuit, integrated circuit, electronic device and method therefor
US9509212B2 (en) *	2014-10-30	2016-11-29	Mediatek Singapore Pte. Ltd.	Charge pump circuit, integrated circuit, electronic device and method therefor
FR3029713B1 (fr) *	2014-12-08	2017-01-13	Commissariat Energie Atomique	Convertisseur continu-continu a demarrage a froid
JP6613584B2 (ja) *	2015-03-18	2019-12-04	セイコーエプソン株式会社	電気光学装置、表示ドライバー及び電子機器
US9594997B1 (en) *	2015-08-17	2017-03-14	Em Microelectronic-Marin Sa	Auxiliary charge pump for a rectifier of an RFID transponder
CN105336371B (zh) *	2015-11-26	2023-05-09	成都芯源系统有限公司	非易失性存储器的电压控制电路及其控制方法
US10250235B2 (en) *	2015-11-30	2019-04-02	The Regents Of The University Of Michigan	Full-wave charge pump with low-voltage startup
US10181788B2 (en) *	2016-01-29	2019-01-15	The Regents Of The University Of Michigan	Rational conversion ratio converter
EP3579233B1 (fr) *	2018-06-04	2021-01-27	EM Microelectronic-Marin SA	Cellule elementaire et pompes de charges comprenant une telle cellule elementaire
JP6783879B2 (ja)	2019-01-29	2020-11-11	ウィンボンドエレクトロニクスコーポレーション	チャージポンプ回路
US20210218330A1 (en) *	2020-01-09	2021-07-15	Winbond Electronics Corp.	Charge pump device and method for providing pump voltage
TWI726670B (zh) *	2020-04-01	2021-05-01	華邦電子股份有限公司	電荷泵裝置和提供泵電壓的方法
CN112448576B (zh) *	2020-11-16	2022-10-25	上海唯捷创芯电子技术有限公司	一种正负电压电荷泵电路、芯片及通信终端
CN117200772A (zh) *	2022-05-31	2023-12-08	江苏乾合微电子有限公司	一种mipi射频开关
EP4687277A1 (en) *	2024-07-30	2026-02-04	Universitat Politècnica De Catalunya	Light energy harvesting integrated circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR0143035B1 (ko) *	1994-12-29	1998-08-17	김주용	챠지 펌프회로
KR100251987B1 (ko) *	1996-12-27	2000-05-01	김영환	하나의 회로로 형성된 포지티브 및 네거티브 차지펌프로 사용이 가능한 차지펌핑회로
JP3475173B2 (ja)	1999-12-08	2003-12-08	三洋電機株式会社	チャージポンプ回路
JP3475178B2 (ja)	2000-01-26	2003-12-08	三洋電機株式会社	チャージポンプ回路
JP2002343083A (ja) *	2001-05-18	2002-11-29	Mitsubishi Electric Corp	半導体装置
JP2004328901A (ja) *	2003-04-24	2004-11-18	Toshiba Microelectronics Corp	半導体集積回路及びそれを用いた電圧昇圧方法
CN1233086C (zh) *	2003-08-29	2005-12-21	清华大学	一种电荷泵电路
JP4773147B2 (ja) *	2005-07-05	2011-09-14	ルネサスエレクトロニクス株式会社	昇圧回路
US7355437B2 (en) *	2006-03-06	2008-04-08	Altera Corporation	Latch-up prevention circuitry for integrated circuits with transistor body biasing

2007
- 2007-02-28 JP JP2007049112A patent/JP4925866B2/ja active Active
2008
- 2008-02-15 TW TW097105300A patent/TW200843347A/zh not_active IP Right Cessation
- 2008-02-27 US US12/038,579 patent/US7583131B2/en active Active
- 2008-02-27 CN CN2008100963475A patent/CN101272091B/zh not_active Expired - Fee Related
- 2008-02-27 KR KR1020080017707A patent/KR100922681B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR100922681B1 (ko)	2009-10-19
US7583131B2 (en)	2009-09-01
TW200843347A (en)	2008-11-01
JP2008211957A (ja)	2008-09-11
KR20080080027A (ko)	2008-09-02
CN101272091A (zh)	2008-09-24
CN101272091B (zh)	2010-10-20
US20080218250A1 (en)	2008-09-11
JP4925866B2 (ja)	2012-05-09

Legal Events

Date	Code	Title	Description
2015-09-01	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TWI353729B (2)	2011-12-01
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