TWI378567B - - Google Patents

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Info

Publication number: TWI378567B
Authority: TW; Taiwan
Prior art keywords: layer; thin film; solar cell; refractive index; semiconductor
Prior art date: 2009-02-06

Application number

TW098103891A

Other languages

English (en)

Chinese (zh)

Other versions

TW201030993A (en

Inventor

Chien Chung Bi

Kuang Chieh Lai

Original Assignee

Nexpower Technology Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-02-06

Filing date

2009-02-06

Publication date

2012-12-01

2009-02-06 Application filed by Nexpower Technology Corp filed Critical Nexpower Technology Corp

2009-02-06 Priority to TW098103891A priority Critical patent/TW201030993A/zh

2010-08-16 Publication of TW201030993A publication Critical patent/TW201030993A/zh

2012-12-01 Application granted granted Critical

2012-12-01 Publication of TWI378567B publication Critical patent/TWI378567B/zh

Links

239000010409 thin film Substances 0.000 claims description 92
239000004065 semiconductor Substances 0.000 claims description 78
239000010408 film Substances 0.000 claims description 63
239000000463 material Substances 0.000 claims description 26
238000002310 reflectometry Methods 0.000 claims description 18
239000000758 substrate Substances 0.000 claims description 18
229910052751 metal Inorganic materials 0.000 claims description 13
239000002184 metal Substances 0.000 claims description 13
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
229910052755 nonmetal Inorganic materials 0.000 claims description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
239000004020 conductor Substances 0.000 claims description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
229910052804 chromium Inorganic materials 0.000 claims description 3
239000011651 chromium Substances 0.000 claims description 3
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
229910052737 gold Inorganic materials 0.000 claims description 3
239000010931 gold Substances 0.000 claims description 3
229910002804 graphite Inorganic materials 0.000 claims description 3
239000010439 graphite Substances 0.000 claims description 3
239000000203 mixture Substances 0.000 claims description 3
229910052759 nickel Inorganic materials 0.000 claims description 3
229910052709 silver Inorganic materials 0.000 claims description 3
239000004332 silver Substances 0.000 claims description 3
229910052719 titanium Inorganic materials 0.000 claims description 3
239000010936 titanium Substances 0.000 claims description 3
239000011787 zinc oxide Substances 0.000 claims description 3
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
229910052733 gallium Inorganic materials 0.000 claims description 2
230000003647 oxidation Effects 0.000 claims description 2
238000007254 oxidation reaction Methods 0.000 claims description 2
229910052710 silicon Inorganic materials 0.000 claims description 2
239000010703 silicon Substances 0.000 claims description 2
229910052725 zinc Inorganic materials 0.000 claims description 2
239000011701 zinc Substances 0.000 claims description 2
229910052797 bismuth Inorganic materials 0.000 claims 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
239000000919 ceramic Substances 0.000 claims 1
239000000839 emulsion Substances 0.000 claims 1
SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
239000011148 porous material Substances 0.000 claims 1
238000006243 chemical reaction Methods 0.000 description 21
230000002708 enhancing effect Effects 0.000 description 19
238000000034 method Methods 0.000 description 11
238000010521 absorption reaction Methods 0.000 description 8
230000031700 light absorption Effects 0.000 description 7
230000001965 increasing effect Effects 0.000 description 6
230000009103 reabsorption Effects 0.000 description 6
230000009102 absorption Effects 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000008569 process Effects 0.000 description 5
238000010586 diagram Methods 0.000 description 4
229910052732 germanium Inorganic materials 0.000 description 4
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
239000004575 stone Substances 0.000 description 4
JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000005520 cutting process Methods 0.000 description 2
239000011521 glass Substances 0.000 description 2
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
238000003698 laser cutting Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
230000035515 penetration Effects 0.000 description 2
229920003023 plastic Polymers 0.000 description 2
239000010453 quartz Substances 0.000 description 2
238000002834 transmittance Methods 0.000 description 2
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
230000003471 anti-radiation Effects 0.000 description 1
238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
229910001566 austenite Inorganic materials 0.000 description 1
229910000420 cerium oxide Inorganic materials 0.000 description 1
239000013078 crystal Substances 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
210000003298 dental enamel Anatomy 0.000 description 1
238000002309 gasification Methods 0.000 description 1
238000005984 hydrogenation reaction Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
239000007769 metal material Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
229910052763 palladium Inorganic materials 0.000 description 1
230000001737 promoting effect Effects 0.000 description 1
238000009774 resonance method Methods 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Photovoltaic Devices (AREA)

TW098103891A 2009-02-06 2009-02-06 Thin film solar cell TW201030993A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
TW098103891A TW201030993A (en)	2009-02-06	2009-02-06	Thin film solar cell

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
TW098103891A TW201030993A (en)	2009-02-06	2009-02-06	Thin film solar cell

Publications (2)

Publication Number	Publication Date
TW201030993A TW201030993A (en)	2010-08-16
TWI378567B true TWI378567B (fr)	2012-12-01

Family

ID=44854380

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW098103891A TW201030993A (en)	2009-02-06	2009-02-06	Thin film solar cell

Country Status (1)

Country	Link
TW (1)	TW201030993A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102254695B (zh) *	2011-04-22	2013-03-20	南京工业大学	具有陷光结构的染料敏化纳米晶薄膜太阳能电池
CN112466971A (zh) *	2019-09-06	2021-03-09	位速科技股份有限公司	堆叠式光伏电池

2009
- 2009-02-06 TW TW098103891A patent/TW201030993A/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
TW201030993A (en)	2010-08-16

Legal Events

Date	Code	Title	Description
2022-09-01	MM4A	Annulment or lapse of patent due to non-payment of fees

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