TWI379444B - - Google Patents

Download PDF

Info

Publication number: TWI379444B
Authority: TW; Taiwan
Prior art keywords: layer; light; substrate; sacrificial layer; patent application
Prior art date: 2008-12-30

Application number

TW97151446A

Other languages

English (en)

Chinese (zh)

Other versions

TW201025673A (en

Original Assignee

Univ Nat Chunghsing

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-12-30

Filing date

2008-12-30

Publication date

2012-12-11

2008-12-30 Application filed by Univ Nat Chunghsing filed Critical Univ Nat Chunghsing

2008-12-30 Priority to TW97151446A priority Critical patent/TW201025673A/zh

2010-07-01 Publication of TW201025673A publication Critical patent/TW201025673A/zh

2012-12-11 Application granted granted Critical

2012-12-11 Publication of TWI379444B publication Critical patent/TWI379444B/zh

Links

239000000758 substrate Substances 0.000 claims description 66
238000000034 method Methods 0.000 claims description 34
239000000463 material Substances 0.000 claims description 17
238000005530 etching Methods 0.000 claims description 11
229920002120 photoresistant polymer Polymers 0.000 claims description 10
241000238631 Hexapoda Species 0.000 claims description 8
239000013078 crystal Substances 0.000 claims description 7
238000005192 partition Methods 0.000 claims description 7
239000003795 chemical substances by application Substances 0.000 claims description 6
239000000126 substance Substances 0.000 claims 2
241001124076 Aphididae Species 0.000 claims 1
230000008719 thickening Effects 0.000 claims 1
239000010410 layer Substances 0.000 description 108
239000010408 film Substances 0.000 description 35
238000004519 manufacturing process Methods 0.000 description 16
230000008569 process Effects 0.000 description 12
229910002601 GaN Inorganic materials 0.000 description 9
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
230000000694 effects Effects 0.000 description 4
230000017525 heat dissipation Effects 0.000 description 4
125000006850 spacer group Chemical group 0.000 description 4
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
229910052802 copper Inorganic materials 0.000 description 3
239000010949 copper Substances 0.000 description 3
238000000151 deposition Methods 0.000 description 3
229910052732 germanium Inorganic materials 0.000 description 3
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
239000010931 gold Substances 0.000 description 3
229910052594 sapphire Inorganic materials 0.000 description 3
239000010980 sapphire Substances 0.000 description 3
239000010936 titanium Substances 0.000 description 3
238000007740 vapor deposition Methods 0.000 description 3
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
239000012790 adhesive layer Substances 0.000 description 2
MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
239000004020 conductor Substances 0.000 description 2
238000005520 cutting process Methods 0.000 description 2
238000000407 epitaxy Methods 0.000 description 2
238000001459 lithography Methods 0.000 description 2
239000007769 metal material Substances 0.000 description 2
239000011241 protective layer Substances 0.000 description 2
239000010409 thin film Substances 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
240000007594 Oryza sativa Species 0.000 description 1
235000007164 Oryza sativa Nutrition 0.000 description 1
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
210000004027 cell Anatomy 0.000 description 1
230000008859 change Effects 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000011651 chromium Substances 0.000 description 1
RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
210000002858 crystal cell Anatomy 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000000605 extraction Methods 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
230000006872 improvement Effects 0.000 description 1
238000003698 laser cutting Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
230000005923 long-lasting effect Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000007747 plating Methods 0.000 description 1
235000009566 rice Nutrition 0.000 description 1
229910052707 ruthenium Inorganic materials 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
239000010959 steel Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
229910052727 yttrium Inorganic materials 0.000 description 1
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
239000011787 zinc oxide Substances 0.000 description 1

Landscapes

Led Devices (AREA)

TW97151446A 2008-12-30 2008-12-30 The method to produce a light emitting device module TW201025673A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
TW97151446A TW201025673A (en)	2008-12-30	2008-12-30	The method to produce a light emitting device module

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
TW97151446A TW201025673A (en)	2008-12-30	2008-12-30	The method to produce a light emitting device module

Publications (2)

Publication Number	Publication Date
TW201025673A TW201025673A (en)	2010-07-01
TWI379444B true TWI379444B (fr)	2012-12-11

Family

ID=44852688

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW97151446A TW201025673A (en)	2008-12-30	2008-12-30	The method to produce a light emitting device module

Country Status (1)

Country	Link
TW (1)	TW201025673A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103606602A (zh) *	2013-10-22	2014-02-26	溧阳市东大技术转移中心有限公司	一种制造半导体芯片的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102082214B (zh) *	2010-11-29	2012-09-26	华南师范大学	一种GaN基LED半导体芯片的制备方法
TWI611540B (zh) *	2016-11-03	2018-01-11	長華科技股份有限公司	積層式預成形封裝導線架及其製作方法

2008
- 2008-12-30 TW TW97151446A patent/TW201025673A/zh unknown

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103606602A (zh) *	2013-10-22	2014-02-26	溧阳市东大技术转移中心有限公司	一种制造半导体芯片的方法

Also Published As

Publication number	Publication date
TW201025673A (en)	2010-07-01

Publication	Publication Date	Title
JP4996706B2 (ja)	2012-08-08	半導体発光素子およびその製造方法
US8053789B2 (en)	2011-11-08	Light emitting device and fabrication method thereof
TWI264064B (en)	2006-10-11	Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method
TWI357163B (en)	2012-01-21	Method of forming light-emitting element
TW201225334A (en)	2012-06-16	Optoelectronic device and method for manufacturing the same
KR101149677B1 (ko)	2012-07-11	플렉서블 소자 제조방법 및 이에 의하여 제조된 플렉서블 소자, 태양전지, ｌｅｄ
TW201036192A (en)	2010-10-01	Back contacting and interconnection of two solar cells
TW201037859A (en)	2010-10-16	Light emitting diode chip and manufacturing method thereof
CN111164766B (zh)	2023-02-03	一种制作半导体发光元件的方法
TW201123525A (en)	2011-07-01	Method of forming light emitting diode
TW201133918A (en)	2011-10-01	Separation process for epitaxial substrate of optoelectronic device
TWI379444B (fr)	2012-12-11
CN114530534A (zh)	2022-05-24	一种led芯片及其制备方法
JP2007013093A (ja)	2007-01-18	発光ダイオード
JPS61234082A (ja)	1986-10-18	太陽電池のアレイを製造する方法
TW201019505A (en)	2010-05-16	Opto-electronic device structure
US8785326B2 (en)	2014-07-22	Methods of separating solid state transducers from substrates and associated devices and systems
JP5592904B2 (ja)	2014-09-17	半導体発光素子
JP2009277852A (ja)	2009-11-26	半導体発光素子とその製造方法
CN218918893U (zh)	2023-04-25	一种低热阻led芯片
TW200937509A (en)	2009-09-01	Fabrication of semiconductor devices
TW200913326A (en)	2009-03-16	Separation of semiconductor devices
TWI322518B (fr)	2010-03-21
TWI351775B (fr)	2011-11-01
TW200810149A (en)	2008-02-16	Light-emitting diode device and method for fabricating the same

TWI379444B - - Google Patents

Info

Links

Landscapes

Priority Applications (1)

Applications Claiming Priority (1)

Publications (2)

Family

ID=44852688

Family Applications (1)

Country Status (1)

Cited By (1)

Families Citing this family (2)

Cited By (1)

Also Published As

Similar Documents