TWI379620B - - Google Patents
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- Publication number
- TWI379620B TWI379620B TW093109834A TW93109834A TWI379620B TW I379620 B TWI379620 B TW I379620B TW 093109834 A TW093109834 A TW 093109834A TW 93109834 A TW93109834 A TW 93109834A TW I379620 B TWI379620 B TW I379620B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- plasma beam
- frequency
- chamber
- extraction grid
- Prior art date
Links
- 230000005855 radiation Effects 0.000 abstract description 21
- 238000000605 extraction Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 7
- 210000002381 plasma Anatomy 0.000 description 26
- 230000007935 neutral effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 240000006927 Foeniculum vulgare Species 0.000 description 1
- 235000004204 Foeniculum vulgare Nutrition 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/54—Plasma accelerators
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Combustion & Propulsion (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- ing And Chemical Polishing (AREA)
- Chemically Coating (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
/-4年Y月厶曰更正替換頁 雜射(I)抽取出來之抽取栅板(4),以及—出 則被設置於出口之範圍内,其特徵為,為達到形成分散之中性電聚 賴射⑴,抽取栅板⑷具有網孔,而該網孔之寬度,至少與抽取 柵板(4)以及«室(3)之電漿間之空間電荷區厚度一樣大。 10·根據申請專利範圍第9項所述之离裀番將 «阿頻電漿輻射源,其中,抽取柵板 ⑷具有網孔,而該等網孔之寬度大小之上限,基本上必須讓電 漿仍然留在電漿室(3 )内。 11. 根據申請專利範圍第9項或第10項所述之高頻電聚轄射源,其中, 纟少有一遮板被施加一電位,以便能夠將中性電篥轄射(I)加以調 〇 12. 根據申凊專利範圍第9項或第1〇項所述之高頻電聚賴射源,其中, 在鍍膜至(7 )裡面,於基本上與出口相對之處,設置一彎曲之表 面,含有基板(10.1、10.2、10.3、1〇 4、1〇 5、1〇 6 )。 13. 根據申請專利範圍第9項或第10項所述之高頻電漿輻射源,其中, 除向頻電聚輻射源(1 )之外,亦設置一蒸鍵源。 M.根據申請專利範圍第9項或第10項所述之高頻電漿輻射源,其中, 抽取柵板(4 )是由鎢絲網絡所構成,金屬絲之粗細為〇 〇2至3mm。 籲15.麟申請專利範圍第9項或第10項所述之高頻電聚輻射源,其中,( 至少設置一磁鐵(5),用於將電漿關在電漿室(3)之範圍内。 16. 一種真空室,其具有一外殼(2)、一高頻電漿輻射源、以及一用於 進行照射之表面,其特徵為,該高頻電漿輻射源(丨)係根據前述 申請專利範圍第1項至第15項十任一項形成。 17. 根據申請專利範圍第16項所述之真空室,其中,用來進行照射之 表面係呈彎曲狀,且包含一或多個基板(1〇丨、1〇 2、1〇 3、1〇 4、 10.5、10.6 ) 〇 18. 一種利用一高頻電漿輻射源之電漿輻射做為一表面照射之方法,其 17/-4 years Y 厶曰 厶曰 替换 替换 替换 替换 替换 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂The concentrating (1), the extraction grid (4) has a mesh, and the width of the mesh is at least as large as the thickness of the space charge region between the extraction grid (4) and the plasma of the chamber (3). 10. According to the scope of the patent application, the fennel will be «A frequency plasma radiation source, wherein the extraction grid (4) has a mesh, and the upper limit of the width of the mesh must basically make electricity The slurry remains in the plasma chamber (3). 11. The high frequency electro-polymerization source according to claim 9 or claim 10, wherein a shutter is applied with a potential to enable neutralization of the (I) 〇12. The high frequency electro-optical source according to claim 9 or claim 1, wherein in the coating to (7), a bend is provided substantially opposite to the outlet. The surface contains a substrate (10.1, 10.2, 10.3, 1〇4, 1〇5, 1〇6). 13. The high frequency plasma radiation source according to claim 9 or claim 10, wherein a steaming source is provided in addition to the frequency collecting radiation source (1). M. The high-frequency plasma radiation source according to claim 9 or claim 10, wherein the extraction grid (4) is composed of a tungsten wire network having a thickness of 〇 2 to 3 mm. The invention relates to a high-frequency concentrating radiation source according to claim 9 or claim 10, wherein (at least one magnet (5) is provided for shutting off the plasma in the plasma chamber (3) 16. A vacuum chamber having a housing (2), a high frequency plasma radiation source, and a surface for performing illumination, wherein the high frequency plasma radiation source (丨) is according to the foregoing The invention provides a vacuum chamber according to claim 16 wherein the surface for performing the illumination is curved and includes one or more Substrate (1〇丨, 1〇2, 1〇3, 1〇4, 10.5, 10.6) 〇18. A method of using a high-frequency plasma radiation source as a surface irradiation method, 17
V 19. 特徵為.,採用一種發散之電聚輕射⑴,而古匕心日更正替: 據申晴專利範圍第1項至第15項中任门頻電聚輻射源則是根 ㈣申請專利_第18項所述之方法,"' 所製成。 —個發散性量度之H射特性n=4,而就,妓輻射(1 )具有 佈函數之指數。 之11則是一個餘弦分 20 根據申請專利範圍第18項或第19項所述之 ⑴之輻射特性,係經由電衆及抽取拇 ’其中,《輻射 作用來達成之。 )之間一精準之交互 21·根獅料概_丨8項料I9項所述之方 (1)之輻射特性,至少必須與-部分之輻射表面相2 ’電毁輕射 在一部分之表面上’能夠使電漿輻射密度達到1 J ’以便至少 22·根據申請專利範圍第18項或第19項所述之 Μ之均勻度。 彎曲之表面。 ',其中,設置有— 23. 根據申請專利範圍第18項或第19項所述之方法,龙 之照射可達成表面之鍍膜。 ,/、中,藉由表面 24. 根據申請專利範圍第18項或第19項所述之方法,复 之照射可達成表面之改善。 / ,、中,藉由表面 25. -種高頻電漿輻_,其具有—為設置之電 於點燃並保持電漿之電氣機具(8、9),自電漿室3 ) ’ —些用 漿輻射(I)抽取出來之抽取柵板(4),以及一出口,而)中把中性電 則被設置於出口之範圍内,其特徵為,為_形成=取柵板(4: 聚輻射(I),由電襞室(3)看去之抽取栅板(4)係形二二中性= 及/或抽取栅板(4 )網孔之寬度,比抽取柵板(4 )以及=構迨 之電漿間之空間電荷區厚度一樣大^ 激至(3 ) 26. —種尚頻電漿輻射源之電漿輻射噴鍍表面之方法,装 六·丹有_為雷_ 設置之電漿室(3),一些用於點燃並保持電漿之電氣機具(=9电浆 18 1379620 /a年屮月ι日更正替換頁 自電漿室(3 )中把中性電漿輻射(I)抽取出來之抽取柵板(4), 以及一出口,而抽取柵板(4)則被設置於出口之範圍内,其特徵為, 為達到形成分散之中性電漿輻射(I),以抽出中性電漿輻射(I), 由電漿室(3 )看去之抽取柵板(4 )係形成凸起之構造及/或具有如 下網孔寬度之抽取柵板(4 )所述網孔寬度大於抽取柵板(4 )及電 漿之空間電荷區之厚度。V 19. The characteristic is that a divergent electro-lighting (1) is used, and the ancient 匕 更 更 : : : : : : 据 据 据 据 据 据 据 据 据 据 据 据 据 据 据 据 申 申 申 申 申 申 申 申 申 申 申The method described in the patent _18, "'. The divergence measure has an H-shooting characteristic of n = 4, and the helium radiation (1) has an index of the cloth function. The 11th is a cosine score. 20 According to the radiation characteristics of (1) mentioned in Item 18 or Item 19 of the patent application scope, it is achieved by the radiation and the extraction of the thumb. ) A precise interaction between the 21st and the lion's material _ 丨 8 items of material I9 (1) of the radiation characteristics, at least with the - part of the radiant surface 2 'electrical damage light on a part of the surface The above can enable the plasma radiation density to reach 1 J' for at least 22. The uniformity of the crucible according to the 18th or 19th item of the patent application. Curved surface. ', where the setting is - 23. According to the method described in claim 18 or 19, the irradiation of the dragon can achieve the coating of the surface. , /, medium, by surface 24. According to the method described in claim 18 or 19, the complex irradiation can achieve surface improvement. / , , , by surface 25. - high-frequency plasma ray _, which has - set the electrical equipment to ignite and maintain the plasma (8, 9), from the plasma chamber 3) The extraction grid (4) extracted by the slurry radiation (I), and an outlet, and the neutral electricity is placed in the range of the outlet, which is characterized by _ formation = taking the grid (4: The radiation (I), the extraction grid (4) seen by the electric chamber (3) is the shape of the second neutral = and / or the width of the extraction grid (4) mesh, than the extraction grid (4) And the thickness of the space charge region between the plasmas of the = structure is as large as ^ (3) 26. A method of plasma radiation sprayed surface of a frequency-frequency plasma radiation source, equipped with six · Dan has _ for mine _ Set the plasma chamber (3), some electrical tools for igniting and maintaining the plasma (=9 plasma 18 1379620 /a year ι ι correction correction page from the plasma chamber (3) neutral plasma Radiation (I) extracts the extraction grid (4), and an outlet, and the extraction grid (4) is disposed within the outlet, which is characterized by the formation of dispersed neutral plasma radiation (I) ), to pump Neutral plasma radiation (I), the extraction grid (4) seen from the plasma chamber (3) is a raised structure and/or has a mesh width of the extraction grid (4) The width is greater than the thickness of the extraction grid (4) and the space charge region of the plasma.
1919
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10317027A DE10317027A1 (en) | 2003-04-11 | 2003-04-11 | High frequency plasma beam source and method for irradiating a surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200423826A TW200423826A (en) | 2004-11-01 |
| TWI379620B true TWI379620B (en) | 2012-12-11 |
Family
ID=33154197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093109834A TW200423826A (en) | 2003-04-11 | 2004-04-09 | High frequency plasma jet source and method for irradiating a surface |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20060099341A1 (en) |
| EP (1) | EP1614138B1 (en) |
| JP (1) | JP4669472B2 (en) |
| KR (1) | KR101112529B1 (en) |
| CN (1) | CN1802724B (en) |
| AT (1) | ATE463041T1 (en) |
| CA (1) | CA2522058C (en) |
| DE (2) | DE10317027A1 (en) |
| ES (1) | ES2343960T3 (en) |
| TW (1) | TW200423826A (en) |
| WO (1) | WO2004091264A2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2307485C2 (en) * | 2005-11-16 | 2007-09-27 | Федеральное государственное унитарное предприятие "Исследовательский Центр им. М.В. Келдыша" | Plasma accelerator cathode |
| CN101945689B (en) * | 2008-01-30 | 2012-07-18 | 应用材料公司 | Systems and methods for plasma discharge sources for preionized surface wave emission |
| DE102009018912A1 (en) | 2009-04-28 | 2010-11-18 | Leybold Optics Gmbh | Method for generating a plasma jet and plasma source |
| US8698400B2 (en) | 2009-04-28 | 2014-04-15 | Leybold Optics Gmbh | Method for producing a plasma beam and plasma source |
| EP2447393A1 (en) * | 2010-10-27 | 2012-05-02 | Applied Materials, Inc. | Evaporation system and method |
| RU2521823C1 (en) * | 2013-04-17 | 2014-07-10 | Государственный научный центр Российской Федерации-федеральное государственное унитарное предприятие "Исследовательский Центр имени М.В. Келдыша" | Accelerated test of plasma engine cathodes and device to this end |
| EP4006948A1 (en) * | 2020-11-26 | 2022-06-01 | Bühler AG | Extraction grid |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2218652B1 (en) * | 1973-02-20 | 1976-09-10 | Thomson Csf | |
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| US4447773A (en) * | 1981-06-22 | 1984-05-08 | California Institute Of Technology | Ion beam accelerator system |
| US4511593A (en) * | 1983-01-17 | 1985-04-16 | Multi-Arc Vacuum Systems Inc. | Vapor deposition apparatus and method |
| US4587430A (en) * | 1983-02-10 | 1986-05-06 | Mission Research Corporation | Ion implantation source and device |
| DE3708717A1 (en) * | 1987-03-18 | 1988-09-29 | Hans Prof Dr Rer Nat Oechsner | METHOD AND DEVICE FOR PROCESSING SOLID BODY SURFACES BY PARTICLE Bombardment |
| FR2619247A1 (en) * | 1987-08-05 | 1989-02-10 | Realisations Nucleaires Et | METAL ION IMPLANTER |
| EP0339554A3 (en) * | 1988-04-26 | 1989-12-20 | Hauzer Holding B.V. | High-frequency ion beam source |
| JPH0265230A (en) * | 1988-08-31 | 1990-03-05 | Mitsubishi Electric Corp | Plasma reactor |
| GB8905073D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Ion gun |
| DE4026367A1 (en) * | 1990-06-25 | 1992-03-12 | Leybold Ag | DEVICE FOR COATING SUBSTRATES |
| DE4239511A1 (en) * | 1992-11-25 | 1994-05-26 | Leybold Ag | Method and device for coating substrates |
| GB2299137B (en) * | 1995-03-20 | 1999-04-28 | Matra Marconi Space Uk Ltd | Ion thruster |
| US6646223B2 (en) * | 1999-12-28 | 2003-11-11 | Texas Instruments Incorporated | Method for improving ash rate uniformity in photoresist ashing process equipment |
| JP2001210245A (en) * | 2000-01-26 | 2001-08-03 | Shincron:Kk | Ion source and ion extracting electrode |
| AU2001247685A1 (en) * | 2000-03-30 | 2001-10-15 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
| US6250070B1 (en) * | 2000-05-09 | 2001-06-26 | Hughes Electronics Corporation | Ion thruster with ion-extraction grids having compound contour shapes |
| JP3485896B2 (en) * | 2000-07-11 | 2004-01-13 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP4073204B2 (en) * | 2001-11-19 | 2008-04-09 | 株式会社荏原製作所 | Etching method |
-
2003
- 2003-04-11 DE DE10317027A patent/DE10317027A1/en not_active Withdrawn
-
2004
- 2004-04-08 DE DE502004010974T patent/DE502004010974D1/en not_active Expired - Lifetime
- 2004-04-08 KR KR1020057019326A patent/KR101112529B1/en not_active Expired - Lifetime
- 2004-04-08 CA CA2522058A patent/CA2522058C/en not_active Expired - Fee Related
- 2004-04-08 WO PCT/EP2004/003796 patent/WO2004091264A2/en not_active Ceased
- 2004-04-08 AT AT04726483T patent/ATE463041T1/en not_active IP Right Cessation
- 2004-04-08 ES ES04726483T patent/ES2343960T3/en not_active Expired - Lifetime
- 2004-04-08 CN CN2004800159205A patent/CN1802724B/en not_active Expired - Lifetime
- 2004-04-08 EP EP04726483A patent/EP1614138B1/en not_active Expired - Lifetime
- 2004-04-08 JP JP2006505081A patent/JP4669472B2/en not_active Expired - Lifetime
- 2004-04-08 US US10/552,677 patent/US20060099341A1/en not_active Abandoned
- 2004-04-09 TW TW093109834A patent/TW200423826A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2522058C (en) | 2013-01-22 |
| CN1802724A (en) | 2006-07-12 |
| CN1802724B (en) | 2011-05-25 |
| KR20050118234A (en) | 2005-12-15 |
| ES2343960T3 (en) | 2010-08-13 |
| EP1614138A2 (en) | 2006-01-11 |
| CA2522058A1 (en) | 2004-10-21 |
| EP1614138B1 (en) | 2010-03-31 |
| US20060099341A1 (en) | 2006-05-11 |
| TW200423826A (en) | 2004-11-01 |
| WO2004091264A2 (en) | 2004-10-21 |
| DE10317027A1 (en) | 2004-11-11 |
| KR101112529B1 (en) | 2012-02-17 |
| DE502004010974D1 (en) | 2010-05-12 |
| JP4669472B2 (en) | 2011-04-13 |
| WO2004091264A3 (en) | 2005-03-10 |
| JP2006522870A (en) | 2006-10-05 |
| ATE463041T1 (en) | 2010-04-15 |
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