TWI406335B - A plasma etch method and a computer readable memory medium - Google Patents

A plasma etch method and a computer readable memory medium Download PDF

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Publication number
TWI406335B
TWI406335B TW096106870A TW96106870A TWI406335B TW I406335 B TWI406335 B TW I406335B TW 096106870 A TW096106870 A TW 096106870A TW 96106870 A TW96106870 A TW 96106870A TW I406335 B TWI406335 B TW I406335B
Authority
TW
Taiwan
Prior art keywords
film
etching
electrode
voltage
plasma
Prior art date
Application number
TW096106870A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746292A (en
Inventor
廣津信
內藤和香子
鈴木敬紀
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200746292A publication Critical patent/TW200746292A/zh
Application granted granted Critical
Publication of TWI406335B publication Critical patent/TWI406335B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW096106870A 2006-02-28 2007-02-27 A plasma etch method and a computer readable memory medium TWI406335B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006052894A JP2007234770A (ja) 2006-02-28 2006-02-28 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体

Publications (2)

Publication Number Publication Date
TW200746292A TW200746292A (en) 2007-12-16
TWI406335B true TWI406335B (zh) 2013-08-21

Family

ID=38555069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106870A TWI406335B (zh) 2006-02-28 2007-02-27 A plasma etch method and a computer readable memory medium

Country Status (4)

Country Link
JP (1) JP2007234770A (ko)
KR (1) KR100894345B1 (ko)
CN (1) CN101030527A (ko)
TW (1) TWI406335B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5065787B2 (ja) * 2007-07-27 2012-11-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および記憶媒体
US20090230089A1 (en) * 2008-03-13 2009-09-17 Kallol Bera Electrical control of plasma uniformity using external circuit
JP5578782B2 (ja) * 2008-03-31 2014-08-27 東京エレクトロン株式会社 プラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
US8232199B2 (en) 2010-07-01 2012-07-31 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension
TWI502617B (zh) * 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
US9786471B2 (en) * 2011-12-27 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etcher design with effective no-damage in-situ ash
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7595431B2 (ja) * 2020-07-21 2024-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040214445A1 (en) * 2001-07-10 2004-10-28 Akitaka Shimizu Dry etching method
US20060037701A1 (en) * 2004-06-21 2006-02-23 Tokyo Electron Limited Plasma processing apparatus and method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831853B2 (ja) * 1999-05-11 2011-12-07 東京エレクトロン株式会社 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法
US6364958B1 (en) * 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
JP4584565B2 (ja) * 2002-11-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004207286A (ja) * 2002-12-24 2004-07-22 Sony Corp ドライエッチング方法および半導体装置の製造方法
JP4722550B2 (ja) * 2004-06-16 2011-07-13 東京エレクトロン株式会社 半導体装置の製造方法
TWI447802B (zh) * 2004-06-21 2014-08-01 東京威力科創股份有限公司 A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040214445A1 (en) * 2001-07-10 2004-10-28 Akitaka Shimizu Dry etching method
US20060037701A1 (en) * 2004-06-21 2006-02-23 Tokyo Electron Limited Plasma processing apparatus and method

Also Published As

Publication number Publication date
JP2007234770A (ja) 2007-09-13
KR20070089618A (ko) 2007-08-31
TW200746292A (en) 2007-12-16
KR100894345B1 (ko) 2009-04-22
CN101030527A (zh) 2007-09-05

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