TWI414088B - 發光元件及其製造方法 - Google Patents

發光元件及其製造方法 Download PDF

Info

Publication number
TWI414088B
TWI414088B TW098143295A TW98143295A TWI414088B TW I414088 B TWI414088 B TW I414088B TW 098143295 A TW098143295 A TW 098143295A TW 98143295 A TW98143295 A TW 98143295A TW I414088 B TWI414088 B TW I414088B
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
illuminating
layer
emitting
Prior art date
Application number
TW098143295A
Other languages
English (en)
Chinese (zh)
Other versions
TW201123539A (en
Inventor
許嘉良
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Priority to TW098143295A priority Critical patent/TWI414088B/zh
Priority to JP2010277971A priority patent/JP2011129920A/ja
Priority to US12/969,001 priority patent/US20110140078A1/en
Publication of TW201123539A publication Critical patent/TW201123539A/zh
Application granted granted Critical
Publication of TWI414088B publication Critical patent/TWI414088B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
TW098143295A 2009-12-16 2009-12-16 發光元件及其製造方法 TWI414088B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW098143295A TWI414088B (zh) 2009-12-16 2009-12-16 發光元件及其製造方法
JP2010277971A JP2011129920A (ja) 2009-12-16 2010-12-14 発光素子及びその製造方法
US12/969,001 US20110140078A1 (en) 2009-12-16 2010-12-15 Light-emitting device and method of making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098143295A TWI414088B (zh) 2009-12-16 2009-12-16 發光元件及其製造方法

Publications (2)

Publication Number Publication Date
TW201123539A TW201123539A (en) 2011-07-01
TWI414088B true TWI414088B (zh) 2013-11-01

Family

ID=44141901

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098143295A TWI414088B (zh) 2009-12-16 2009-12-16 發光元件及其製造方法

Country Status (3)

Country Link
US (1) US20110140078A1 (2)
JP (1) JP2011129920A (2)
TW (1) TWI414088B (2)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8680551B1 (en) * 2006-10-18 2014-03-25 Nitek, Inc. High power ultraviolet light sources and method of fabricating the same
US8471282B2 (en) 2010-06-07 2013-06-25 Koninklijke Philips Electronics N.V. Passivation for a semiconductor light emitting device
EP2686892B1 (en) * 2011-03-14 2019-10-02 Lumileds Holding B.V. Led having vertical contacts redistributed for flip chip mounting
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
TWI467807B (zh) * 2011-10-28 2015-01-01 Rgb Consulting Co Ltd 覆晶式之發光二極體
DE102011087887A1 (de) * 2011-12-07 2013-06-13 Osram Gmbh Leuchtdiodenanordnung
US8928012B2 (en) * 2012-02-22 2015-01-06 Jianhua Hu AC LED device and its manufacturing process for general lighting applications
TWI549278B (zh) * 2012-03-12 2016-09-11 晶元光電股份有限公司 發光二極體元件
TWI575722B (zh) * 2012-03-12 2017-03-21 晶元光電股份有限公司 發光二極體元件
TWI523269B (zh) * 2012-03-30 2016-02-21 晶元光電股份有限公司 發光元件
CN103378254B (zh) * 2012-04-27 2017-07-21 晶元光电股份有限公司 发光元件
US20150187993A1 (en) 2012-06-14 2015-07-02 Sang Jeong An Semiconductor light-emitting device and method for manufacturing the same
KR101928328B1 (ko) * 2012-07-26 2018-12-12 안상정 반도체 발광소자
US9362446B2 (en) * 2012-07-26 2016-06-07 Sang Jeong An Semiconductor light-emitting device
TWI484673B (zh) * 2012-08-22 2015-05-11 華夏光股份有限公司 半導體發光裝置
TWI626395B (zh) 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
TWI661578B (zh) * 2013-06-20 2019-06-01 Epistar Corporation 發光裝置及發光陣列
US9761774B2 (en) * 2014-12-16 2017-09-12 Epistar Corporation Light-emitting element with protective cushioning
TWI642874B (zh) * 2013-09-11 2018-12-01 晶元光電股份有限公司 發光二極體組件以及相關之照明裝置
KR102135921B1 (ko) * 2013-12-27 2020-07-20 엘지디스플레이 주식회사 연성회로기판 및 이를 포함하는 영상표시장치
KR102227085B1 (ko) * 2014-03-05 2021-03-12 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR20150105255A (ko) 2014-03-06 2015-09-16 에피스타 코포레이션 발광 소자
US9997676B2 (en) 2014-05-14 2018-06-12 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
TWI614920B (zh) 2014-05-19 2018-02-11 晶元光電股份有限公司 光電元件及其製造方法
JP6529223B2 (ja) * 2014-06-30 2019-06-12 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
KR101529934B1 (ko) * 2014-07-01 2015-06-18 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
TWI641285B (zh) 2014-07-14 2018-11-11 新世紀光電股份有限公司 發光模組與發光單元的製作方法
KR101771460B1 (ko) 2015-01-27 2017-08-25 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
TWI646706B (zh) 2015-09-21 2019-01-01 隆達電子股份有限公司 發光二極體晶片封裝體
KR102412409B1 (ko) * 2015-10-26 2022-06-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR102761525B1 (ko) * 2016-12-07 2025-02-04 서울바이오시스 주식회사 디스플레이 장치 및 그의 전극 연결 방법
KR102772357B1 (ko) * 2016-12-20 2025-02-21 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치
KR102582424B1 (ko) * 2017-12-14 2023-09-25 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 장치
JP6843916B2 (ja) * 2019-05-14 2021-03-17 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
US11948922B2 (en) * 2020-01-03 2024-04-02 Seoul Viosys Co., Ltd. Light emitting device and LED display apparatus including the same
CN213635982U (zh) 2020-01-03 2021-07-06 首尔伟傲世有限公司 发光元件以及具有该发光元件的显示装置
JP7223046B2 (ja) * 2021-02-24 2023-02-15 晶元光電股▲ふん▼有限公司 光電部品
CN116014051A (zh) * 2021-10-22 2023-04-25 隆达电子股份有限公司 微型发光二极管封装结构
CN114759136B (zh) * 2022-06-14 2022-08-30 南昌凯捷半导体科技有限公司 一种miniLED芯片及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121127A (en) * 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6169294B1 (en) * 1998-09-08 2001-01-02 Epistar Co. Inverted light emitting diode
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US20070072324A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc Substrate for growing a III-V light emitting device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
JP4585014B2 (ja) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド 発光装置
US7675075B2 (en) * 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
JP2008011285A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd 送信電力制御装置及び送信電力制御方法
CN101144598A (zh) * 2006-09-11 2008-03-19 财团法人工业技术研究院 交流发光装置
JP2010517274A (ja) * 2007-01-22 2010-05-20 クリー レッド ライティング ソリューションズ、インコーポレイテッド 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
WO2008091837A2 (en) * 2007-01-22 2008-07-31 Cree Led Lighting Solutions, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121127A (en) * 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
US6169294B1 (en) * 1998-09-08 2001-01-02 Epistar Co. Inverted light emitting diode
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6573537B1 (en) * 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US20070072324A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc Substrate for growing a III-V light emitting device

Also Published As

Publication number Publication date
JP2011129920A (ja) 2011-06-30
TW201123539A (en) 2011-07-01
US20110140078A1 (en) 2011-06-16

Similar Documents

Publication Publication Date Title
TWI414088B (zh) 發光元件及其製造方法
CN102446948B (zh) 发光元件
US10326059B2 (en) Thin film light emitting diode
JP5237566B2 (ja) 発光素子パッケージ及びその製造方法
TWI535077B (zh) 發光單元及其發光模組
US7829911B2 (en) Light emitting diode
CN102214649B (zh) 一种led封装结构及其制备方法
TW554553B (en) Sub-mount for high power light emitting diode
US7875473B2 (en) Method of manufacturing light emitting diode device
TW200814350A (en) A light emitting device and the manufacture method thereof
WO2012012976A1 (zh) 一种硅基板集成有功能电路的led表面贴装结构及其封装方法
CN107112404B (zh) 发光装置
KR101281081B1 (ko) 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법
US20120313119A1 (en) Three dimensional light-emitting-diode (led) stack and method of manufacturing the same
TWI533473B (zh) 發光元件及其製造方法
TWM436224U (2)
CN104091815A (zh) 发光元件
TWI467807B (zh) 覆晶式之發光二極體
TWI479695B (zh) A light emitting diode chip and a light emitting element
JP2007188942A (ja) 整流回路を副キャリアに結合した発光ダイオードの発光装置及びその製造方法
WO2015165048A1 (zh) 一种结合led外延结构与led封装基板为一体的垂直式led阵列元件
HK1122649A1 (zh) 一种发光二极管及其制造方法
HK1122649B (en) A kind of light emitting diode and its manufacturing methods