TWI418655B - Wet bench sidewall paddle agitation method and apparatus - Google Patents
Wet bench sidewall paddle agitation method and apparatus Download PDFInfo
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- TWI418655B TWI418655B TW100131996A TW100131996A TWI418655B TW I418655 B TWI418655 B TW I418655B TW 100131996 A TW100131996 A TW 100131996A TW 100131996 A TW100131996 A TW 100131996A TW I418655 B TWI418655 B TW I418655B
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- 238000000034 method Methods 0.000 title claims description 37
- 238000013019 agitation Methods 0.000 title claims description 5
- 238000003756 stirring Methods 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 39
- 239000011521 glass Substances 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 230000000694 effects Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- ing And Chemical Polishing (AREA)
Description
本發明係有關於一種濕製程蝕刻方法及裝置,特別是一種以攪棒擾動載具邊緣之濕製程蝕刻方法及裝置。The present invention relates to a wet process etching method and apparatus, and more particularly to a wet process etching method and apparatus for disturbing the edge of a carrier with a stir bar.
一般在進行濕式蝕刻時,首先反應物利用擴散效應,通過一層薄薄的擴散邊界層,以到達被蝕刻薄膜表面。然後,這些反應物將與薄膜表面的分子產生化學反應,並生成各種反應生成物。這些位於薄膜表面的反應生成物,也將利用擴散效應,通過擴散邊界層到達溶液裡,而後隨者溶液排出。為增加擴散效應,有利用磁鐵帶動蝕刻槽底部之攪棒以攪拌蝕刻液,但僅能攪動下層之蝕刻液,對於大面積之玻璃或晶圓之蝕刻,亦不能到達載具之凹槽(Slot)處,而形成死角。授予Jellrey C. Calio等人之美國專利第6,054,162號案教導一種攪拌蝕刻液之方法及裝置,在蝕刻槽底部放出氣泡,以攪拌蝕刻液,但仍不能攪動到載具之凹槽(Slot)處,亦形成死角。Generally, when wet etching is performed, first, the reactant utilizes a diffusion effect through a thin diffusion boundary layer to reach the surface of the film to be etched. These reactants then chemically react with the molecules on the surface of the film and produce various reaction products. These reaction products on the surface of the film will also use the diffusion effect to reach the solution by diffusing the boundary layer, and the subsequent solution is discharged. In order to increase the diffusion effect, a magnet is used to drive the stir bar at the bottom of the etching tank to stir the etching liquid, but only the lower etching liquid can be stirred. For the etching of a large area of glass or wafer, the groove of the carrier cannot be reached (Slot). ), and form a dead end. U.S. Patent No. 6,054,162 to Jellrey C. Calio et al. teaches a method and apparatus for agitating an etchant by ejecting bubbles at the bottom of the etched tank to agitate the etchant but still not agitate to the groove of the carrier. It also formed a dead end.
故有一種需求,能有一種攪拌蝕刻液之方法及裝置,可使得位於載具(Cassette)內各玻璃/晶圓表面能夠得到均勻之蝕刻液分佈。Therefore, there is a need for a method and apparatus for agitating an etchant that provides a uniform etchant distribution across the glass/wafer surface within the Cassette.
本發明即針對此一需求,提出一種能解決以上缺點之攪拌蝕刻液之方法及裝置。In view of this need, the present invention provides a method and apparatus for agitating an etchant that can solve the above disadvantages.
本發明之目的在提供一種以攪棒擾動載具邊緣之濕製程蝕刻裝置,利用攪棒往復式攪拌產生微小振動,提高蝕刻均勻度,而增進良率。SUMMARY OF THE INVENTION The object of the present invention is to provide a wet process etching apparatus for disturbing the edge of a carrier with a stir bar, which uses a stir bar to reciprocally stir to generate minute vibrations, thereby improving etching uniformity and improving yield.
本發明之次一目的在提供一種以攪棒擾動載具邊緣之濕製程蝕刻方法,以排除載具凹槽處之流場死角,提高蝕刻均勻度,而增進良率。A second object of the present invention is to provide a wet process etching method for disturbing the edge of a carrier with a stir bar to eliminate the dead field of the flow field at the groove of the carrier, improve the etching uniformity, and improve the yield.
為達成上述目的及其他目的,本發明之第一觀點教導一種以攪棒擾動載具邊緣之濕製程蝕刻裝置,利用攪棒往復式攪拌設計,使玻璃/晶圓產生微小振動(Micro-vibration),可使得位於載具(Cassette)內各玻璃/晶圓表面能夠得到均勻之蝕刻液分佈,尤其是在固定玻璃/晶圓的凹槽(Slot)處,為蝕刻液最不易擴散到達之死角,使用攪棒之往復式攪拌,可提高玻璃/晶圓之蝕刻均勻度,包括:一個濕製程蝕刻槽,內有蝕刻液及載具,載具之凹槽內置放要蝕刻之玻璃/晶圓;兩組攪棒,分置於載具之兩側,由連桿帶動,一組向前,一組向後地往復攪拌;兩根連桿,於蝕刻時,一根向前,一根向後地往復運動,以分別帶動兩組攪棒。In order to achieve the above and other objects, the first aspect of the present invention teaches a wet process etching apparatus that disturbs the edge of a carrier with a stir bar, and uses a reciprocating stirring design of the stir bar to cause micro-vibration of the glass/wafer. It can make a uniform etchant distribution on each glass/wafer surface in the Cassette, especially at the fixed glass/wafer slot, which is the dead spot where the etching solution is the least likely to spread. The reciprocating agitation of the stir bar can improve the etching uniformity of the glass/wafer, including: a wet process etching bath with an etchant and a carrier, and a groove for the carrier to be embedded with the glass/wafer to be etched; Two sets of stir bar are placed on both sides of the vehicle, driven by the connecting rod, one set forward and one set back and forth to reciprocate; two connecting rods, one for forward and one backward for etching Exercise to drive the two sets of stir bars separately.
本發明之另一觀點教導一種以攪棒擾動載具邊緣之濕製程蝕刻方法,利用攪棒往復式攪拌,產生不同方向之水波來推動工件之兩邊,使其一邊向前,一邊向後抵住凹槽,使玻璃/晶圓產生微小振動(Micro-vibration),可使得位於載具(Cassette)內各玻璃/晶圓表面能夠得到均勻之蝕刻液分佈,尤其是在固定玻璃/晶圓的凹槽(Slot)處,為蝕刻液最不易擴散到達之死角,經由調整攪拌頻率及攪棒之形狀、數量及位置,可排除載具凹槽處之流場死角,有效降低擴散邊界層厚度,進而提高玻璃/晶圓之蝕刻均勻度,包括:將玻璃/晶圓置於載具之凹槽內;將內有玻璃/晶圓之載具置於內有蝕刻液之濕製程蝕刻槽內;使載具兩側之兩根連桿帶動兩組攪棒;調整攪拌頻率及攪棒之形狀、數量及位置,以排除載具凹槽處之流場死角,以提高玻璃/晶圓之蝕刻均勻度。Another aspect of the present invention teaches a wet process etching method for disturbing the edge of a carrier with a stir bar, which uses a stir bar reciprocating agitation to generate water waves in different directions to push both sides of the workpiece so that one side is forward and the back is pressed against the concave Slots that cause micro-vibration of the glass/wafer to provide uniform etchant distribution across the glass/wafer surface in the Cassette, especially in fixed glass/wafer grooves (Slot) is the dead angle that the etching liquid is most difficult to diffuse. By adjusting the stirring frequency and the shape, number and position of the stirring rod, the flow field dead angle at the groove of the carrier can be eliminated, and the thickness of the diffusion boundary layer can be effectively reduced, thereby improving Glass/wafer etch uniformity, including: placing the glass/wafer in the recess of the carrier; placing the glass/wafer carrier in a wet process etching bath with an etchant; Two sets of connecting rods on both sides are used to drive the two sets of stirring rods; the stirring frequency and the shape, number and position of the stirring rods are adjusted to eliminate the flow field dead angle at the groove of the carrier to improve the etching uniformity of the glass/wafer.
本發明之以上及其他目的及優點參考以下之參照圖示及最佳實施例之說明而更易完全瞭解。The above and other objects and advantages of the present invention will be more fully understood from the description and appended claims appended claims.
請參考第1圖,第1圖顯示濕式蝕刻之擴散邊界層理論示意圖。在進行濕式蝕刻時,首先反應物利用擴散效應,通過一層薄薄的擴散邊界層,以到達被蝕刻薄膜表面。然後,這些反應物將與薄膜表面的分子產生化學反應,並生成各種反應生成物。這些位於薄膜表面的反應生成物,也將利用擴散效應,通過擴散邊界層到達溶液裡,而後隨者溶液排出。根據流體之質量傳輸(Mass Transfer)公式可知,設備使用Paddle攪拌方式,以增加W(振動頻率或角頻率)的值,可降低擴散邊界層厚度(δ),進而提高擴散速率及最終蝕刻速率。其中D為擴散常數,V為黏度(Kinetic Viscosity)。Please refer to FIG. 1 , which shows a schematic diagram of the diffusion boundary layer of wet etching. In the wet etching, the reactants first pass through a thin diffusion boundary layer to reach the surface of the film to be etched by the diffusion effect. These reactants then chemically react with the molecules on the surface of the film and produce various reaction products. These reaction products on the surface of the film will also use the diffusion effect to reach the solution by diffusing the boundary layer, and the subsequent solution is discharged. According to the fluid mass transfer formula, the device uses the Paddle stirring method to increase the value of W (vibration frequency or angular frequency) to reduce the diffusion boundary layer thickness (δ), thereby increasing the diffusion rate and the final etching rate. Where D is the diffusion constant and V is the Kinetic Viscosity.
擴散層厚度δ=1.61D1/3 V1/6 (w)1/2 Diffusion layer thickness δ=1.61D 1/3 V 1/6 (w) 1/2
第2圖顯示依據本發明實施例以攪棒擾動載具邊緣之濕製程蝕刻裝置之示意圖。以攪棒擾動載具邊緣之濕製程蝕刻裝置200在濕製程蝕刻槽202內有蝕刻液(未圖示),中間放置載具208,載具之凹槽212可置放需蝕刻之玻璃/晶圓210,兩組攪棒206、207分置於載具208之兩側,由連桿204、205帶動,一組向前,一組向後地往復攪拌。第3圖顯示依據本發明實施例一組攪棒之側視圖。攪棒206、207可為1支,或為數支成一組,例如2至5支,但不可過多,否則行程不足,擾動力道太小。攪拌頻率為每分鐘5至20次。連桿204、205則由馬達或氣動式帶動。Figure 2 is a schematic illustration of a wet process etching apparatus for disturbing the edges of a carrier with a stir bar in accordance with an embodiment of the present invention. The wet process etching apparatus 200 for disturbing the edge of the carrier with a stir bar has an etching liquid (not shown) in the wet process etching bath 202, and the carrier 208 is placed in the middle, and the groove 212 of the carrier can be placed on the glass/crystal to be etched. Circle 210, the two sets of stir bars 206, 207 are placed on either side of the carrier 208, driven by the links 204, 205, one set forward and one set back and forth agitated. Figure 3 shows a side view of a set of stir bars in accordance with an embodiment of the present invention. The stir bar 206, 207 may be one, or a plurality of groups, for example, 2 to 5, but not too much, otherwise the stroke is insufficient and the disturbing power path is too small. The stirring frequency is 5 to 20 times per minute. The links 204, 205 are driven by a motor or pneumatically.
第3圖顯示依據本發明實施例以攪棒擾動載具邊緣形成水波之示意圖。載具之凹槽212置放需蝕刻之玻璃/晶圓210。置放需蝕刻之玻璃/晶圓210,攪棒206向前推動蝕刻液形成水波402。推動玻璃/晶圓210之右側向前,使蝕刻液到達凹槽212內之玻璃/晶圓210表面。相反地。攪棒207向後推動蝕刻液形成水波403。推動玻璃/晶圓210之左側向後,使蝕刻液到達凹槽212內之玻璃/晶圓210表面。因而有效降低擴散邊界層厚度,並使蝕刻液進入最不易擴散到達凹槽內之死角。進而提高玻璃/晶圓之蝕刻均勻度。第4圖顯示攪棒反向擾動之示意圖。攪棒206改為向後而攪棒207改為向前,如此反覆擾動,以提高玻璃/晶圓之蝕刻均勻度。Figure 3 is a schematic illustration of the formation of water waves at the edges of the carrier by a stir bar in accordance with an embodiment of the present invention. The recess 212 of the carrier places the glass/wafer 210 to be etched. The glass/wafer 210 to be etched is placed, and the stir bar 206 pushes the etchant forward to form a water wave 402. Pushing the right side of the glass/wafer 210 forward causes the etchant to reach the surface of the glass/wafer 210 within the recess 212. Conversely. The stir bar 207 pushes the etching liquid backward to form a water wave 403. Pushing the left side of the glass/wafer 210 rearward causes the etchant to reach the surface of the glass/wafer 210 within the recess 212. Therefore, the thickness of the diffusion boundary layer is effectively reduced, and the etching liquid enters a dead angle which is least likely to diffuse into the groove. In turn, the etch uniformity of the glass/wafer is improved. Figure 4 shows a schematic diagram of the reverse disturbance of the stir bar. The stir bar 206 is changed to the rear and the stir bar 207 is changed to the forward direction, so that the disturbance is repeated to improve the etching uniformity of the glass/wafer.
藉由以上較佳之具體實施例之詳述,係希望能更加清楚描述本創作之特徵與精神,而並非以上述所揭露的較佳具體實例來對本發明之範疇加以限制。相反的,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範疇內。The features and spirit of the present invention are more clearly described in the detailed description of the preferred embodiments of the present invention, and are not intended to limit the scope of the invention. On the contrary, the intention is to cover various modifications and equivalent arrangements within the scope of the invention as claimed.
200...以攪棒擾動載具邊緣之濕製程蝕刻裝置200. . . Wet process etching device for disturbing the edge of the carrier with a stir bar
202...濕製程蝕刻槽202. . . Wet process etching bath
204...連桿204. . . link
206...攪棒206. . . Stir bar
207...攪棒207. . . Stir bar
208...載具208. . . vehicle
210...玻璃/晶圓210. . . Glass/wafer
212...載具之凹槽212. . . Carrier groove
402...向前之水波402. . . Forward water wave
403...向後之水波403. . . Backward water wave
第1圖顯示濕式蝕刻之擴散邊界層理論示意圖。Figure 1 shows a schematic diagram of the diffusion boundary layer of wet etching.
第2圖顯示依據本發明實施例以攪棒擾動載具邊緣之濕製程蝕刻裝置之示意圖。Figure 2 is a schematic illustration of a wet process etching apparatus for disturbing the edges of a carrier with a stir bar in accordance with an embodiment of the present invention.
第3圖顯示依據本發明實施例以攪棒擾動載具邊緣形成水波之示意圖。Figure 3 is a schematic illustration of the formation of water waves at the edges of the carrier by a stir bar in accordance with an embodiment of the present invention.
第4圖顯示攪棒反向擾動之示意圖。Figure 4 shows a schematic diagram of the reverse disturbance of the stir bar.
200...以攪棒擾動載具邊緣之濕製程蝕刻裝置200. . . Wet process etching device for disturbing the edge of the carrier with a stir bar
202...濕製程蝕刻槽202. . . Wet process etching bath
204...連桿204. . . link
206...攪棒206. . . Stir bar
207...攪棒207. . . Stir bar
208...載具208. . . vehicle
Claims (7)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100131996A TWI418655B (en) | 2011-09-06 | 2011-09-06 | Wet bench sidewall paddle agitation method and apparatus |
| CN2012103192076A CN102983061A (en) | 2011-09-06 | 2012-08-31 | Wet process etching device and method using stirring rod to disturb carrier edge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100131996A TWI418655B (en) | 2011-09-06 | 2011-09-06 | Wet bench sidewall paddle agitation method and apparatus |
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| Publication Number | Publication Date |
|---|---|
| TW201311932A TW201311932A (en) | 2013-03-16 |
| TWI418655B true TWI418655B (en) | 2013-12-11 |
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|---|---|---|---|
| TW100131996A TWI418655B (en) | 2011-09-06 | 2011-09-06 | Wet bench sidewall paddle agitation method and apparatus |
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| CN (1) | CN102983061A (en) |
| TW (1) | TWI418655B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200413087A (en) * | 2003-01-20 | 2004-08-01 | Taiwan Semiconductor Mfg | System and method of homogeneous fluid mixing |
| US20070151844A1 (en) * | 2005-11-23 | 2007-07-05 | Semitool, Inc. | Apparatus and method for agitating liquids in wet chemical processing of microfeature workpieces |
| JP2008192766A (en) * | 2007-02-02 | 2008-08-21 | Sharp Corp | Wet etching equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101247700A (en) * | 2007-02-16 | 2008-08-20 | 和旺昌喷雾股份有限公司 | Stirring type wet processing machine and stirring type wet processing |
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2011
- 2011-09-06 TW TW100131996A patent/TWI418655B/en active
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- 2012-08-31 CN CN2012103192076A patent/CN102983061A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200413087A (en) * | 2003-01-20 | 2004-08-01 | Taiwan Semiconductor Mfg | System and method of homogeneous fluid mixing |
| US20070151844A1 (en) * | 2005-11-23 | 2007-07-05 | Semitool, Inc. | Apparatus and method for agitating liquids in wet chemical processing of microfeature workpieces |
| JP2008192766A (en) * | 2007-02-02 | 2008-08-21 | Sharp Corp | Wet etching equipment |
Non-Patent Citations (1)
| Title |
|---|
| 1.藍偉誌撰寫,"攪拌方式與蝕刻幾何特徵對KOH矽蝕刻蝕刻速率及表面粗糙度的影響",中國機械工程學會第二十一屆全國學術研討會論文集,九十三年十一月二十六日。 * |
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| Publication number | Publication date |
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| CN102983061A (en) | 2013-03-20 |
| TW201311932A (en) | 2013-03-16 |
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