TWI437384B - 光刻用洗淨劑及沖洗劑 - Google Patents

光刻用洗淨劑及沖洗劑 Download PDF

Info

Publication number
TWI437384B
TWI437384B TW096110276A TW96110276A TWI437384B TW I437384 B TWI437384 B TW I437384B TW 096110276 A TW096110276 A TW 096110276A TW 96110276 A TW96110276 A TW 96110276A TW I437384 B TWI437384 B TW I437384B
Authority
TW
Taiwan
Prior art keywords
acetate
alkyl ether
ether
glycol alkyl
photoresist
Prior art date
Application number
TW096110276A
Other languages
English (en)
Chinese (zh)
Other versions
TW200801852A (en
Inventor
Akira Horiguchi
Toru Katayama
Original Assignee
Daicel Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daicel Chem filed Critical Daicel Chem
Publication of TW200801852A publication Critical patent/TW200801852A/zh
Application granted granted Critical
Publication of TWI437384B publication Critical patent/TWI437384B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/04—Polymerisation in solution
    • C08F2/06—Organic solvent
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096110276A 2006-03-29 2007-03-26 光刻用洗淨劑及沖洗劑 TWI437384B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006090172A JP2007264352A (ja) 2006-03-29 2006-03-29 リソグラフィー用洗浄剤又はリンス剤

Publications (2)

Publication Number Publication Date
TW200801852A TW200801852A (en) 2008-01-01
TWI437384B true TWI437384B (zh) 2014-05-11

Family

ID=38637395

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110276A TWI437384B (zh) 2006-03-29 2007-03-26 光刻用洗淨劑及沖洗劑

Country Status (4)

Country Link
JP (1) JP2007264352A (ja)
KR (1) KR20070098586A (ja)
CN (1) CN101046641A (ja)
TW (1) TWI437384B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102227687A (zh) * 2008-12-25 2011-10-26 长瀬化成株式会社 光致抗蚀剂剥离剂组合物、层积金属布线基板的光致抗蚀剂剥离方法和制造方法
JP6899220B2 (ja) * 2017-01-11 2021-07-07 株式会社ダイセル レジスト除去用組成物
SG11202005938SA (en) 2018-01-05 2020-07-29 Fujifilm Electronic Materials Usa Inc Surface treatment compositions and methods
CN109164686B (zh) * 2018-11-02 2022-01-28 江阴江化微电子材料股份有限公司 一种正性光刻胶去胶清洗组合物及其应用
TWI792260B (zh) * 2021-04-09 2023-02-11 晶瑞光電股份有限公司 利用金屬掀離製程的半導體元件製造方法及其製成之半導體元件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0667420A (ja) * 1992-08-19 1994-03-11 Nippon Zeon Co Ltd ポジ型レジスト組成物
JP3619261B2 (ja) * 1993-06-15 2005-02-09 三菱レイヨン株式会社 溶剤組成物
JPH086244A (ja) * 1994-06-17 1996-01-12 Shin Etsu Chem Co Ltd 感放射線性レジスト組成物
JP2005286208A (ja) * 2004-03-30 2005-10-13 Shin Etsu Chem Co Ltd 剥離液および薄膜除去方法

Also Published As

Publication number Publication date
CN101046641A (zh) 2007-10-03
JP2007264352A (ja) 2007-10-11
KR20070098586A (ko) 2007-10-05
TW200801852A (en) 2008-01-01

Similar Documents

Publication Publication Date Title
TWI417682B (zh) 微細化圖案之形成方法及用於它之光阻基板處理液
KR100593280B1 (ko) 평판인쇄용 린싱 및 스트리핑 방법
JP3978255B2 (ja) リソグラフィー用洗浄剤
EP2933682B1 (en) Composition and use of a composition for forming overlay film, and resist pattern formation method using same
JP2003167352A (ja) ホトレジストパターンの形成方法およびホトレジスト積層体
JPH06148896A (ja) レジスト用塗布液及びそれを用いたレジスト材料
JP6371057B2 (ja) パターン形成方法
KR20070098586A (ko) 리소그래피용 세정제 또는 린스제
TWI383271B (zh) 微影後之洗淨步驟用洗淨劑及沖洗液
KR101405696B1 (ko) 레지스트 조성물
JP4626978B2 (ja) リソグラフィー用洗浄剤及びリンス液
US6416930B2 (en) Composition for lithographic anti-reflection coating, and resist laminate using the same
TWI363935B (ja)
TWI406109B (zh) 光刻用洗淨劑或沖洗劑
JP2001117241A (ja) リソグラフィー用リンス液
TWI417651B (zh) 光阻組成物
TWI477912B (zh) Photoresist composition and photoresist pattern formation method
JP2001117242A (ja) リソグラフィー用洗浄剤
JPH0667420A (ja) ポジ型レジスト組成物
JPH05241332A (ja) レジスト材料
TW201730693A (zh) 光阻圖型形成方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees