TWI446405B - Ultraviolet (EUV) mask base - Google Patents

Ultraviolet (EUV) mask base Download PDF

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Publication number
TWI446405B
TWI446405B TW097112501A TW97112501A TWI446405B TW I446405 B TWI446405 B TW I446405B TW 097112501 A TW097112501 A TW 097112501A TW 97112501 A TW97112501 A TW 97112501A TW I446405 B TWI446405 B TW I446405B
Authority
TW
Taiwan
Prior art keywords
layer
substrate
euv
mark
defect
Prior art date
Application number
TW097112501A
Other languages
English (en)
Chinese (zh)
Other versions
TW200849332A (en
Inventor
Yoshiaki Ikuta
Ken Ebihara
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW200849332A publication Critical patent/TW200849332A/zh
Application granted granted Critical
Publication of TWI446405B publication Critical patent/TWI446405B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW097112501A 2007-04-17 2008-04-07 Ultraviolet (EUV) mask base TWI446405B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007108060 2007-04-17

Publications (2)

Publication Number Publication Date
TW200849332A TW200849332A (en) 2008-12-16
TWI446405B true TWI446405B (zh) 2014-07-21

Family

ID=39875443

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097112501A TWI446405B (zh) 2007-04-17 2008-04-07 Ultraviolet (EUV) mask base

Country Status (3)

Country Link
JP (1) JP5327046B2 (fr)
TW (1) TWI446405B (fr)
WO (1) WO2008129914A1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
JP5279840B2 (ja) * 2008-11-27 2013-09-04 Ｈｏｙａ株式会社 多層反射膜付基板及び反射型マスクブランク並びに反射型マスクの製造方法
KR101650370B1 (ko) * 2009-03-26 2016-08-23 호야 가부시키가이샤 반사형 마스크용 다층 반사막 부착 기판 및 반사형 마스크블랭크 그리고 그것들의 제조방법
WO2012121159A1 (fr) * 2011-03-07 2012-09-13 旭硝子株式会社 Substrat multicouche, procédé de fabrication pour substrat multicouche, et procédé de contrôle de qualité pour substrat multicouche
WO2013031863A1 (fr) * 2011-09-01 2013-03-07 旭硝子株式会社 Ébauche de masque réfléchissant, procédé de fabrication d'une ébauche de masque réfléchissant et procédé permettant de procéder au contrôle de la qualité d'une ébauche de masque réfléchissant
KR101993322B1 (ko) 2011-09-28 2019-06-26 호야 가부시키가이샤 마스크블랭크용 유리기판, 다층 반사막 부착 기판, 마스크블랭크 및 마스크, 그리고 그것들의 제조방법
JP6460617B2 (ja) 2012-02-10 2019-01-30 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法
WO2013133321A1 (fr) * 2012-03-07 2013-09-12 株式会社ニコン Masque, unité de masque, dispositif d'exposition, appareil de traitement de substrat et procédé de fabrication de dispositif
JP6460619B2 (ja) * 2012-03-12 2019-01-30 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
US9229316B2 (en) 2012-03-28 2016-01-05 Hoya Corporation Method for producing substrate with multilayer reflective film, method for producing reflective mask blank and method for producing reflective mask
WO2014050891A1 (fr) * 2012-09-28 2014-04-03 旭硝子株式会社 Ébauche de masque réfléchissant destinée à une lithographie par ultraviolets extrêmes et son procédé de fabrication, et masque réfléchissant destiné à une lithographie par ultraviolets extrêmes et son procédé de fabrication
JP6106413B2 (ja) * 2012-11-13 2017-03-29 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP6114009B2 (ja) * 2012-11-13 2017-04-12 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP6147514B2 (ja) * 2013-01-31 2017-06-14 Hoya株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法
WO2014129527A1 (fr) * 2013-02-22 2014-08-28 Hoya株式会社 Procédé de fabrication de blanc de masque réfléchissant, et procédé de fabrication de masque réfléchissant
JP6282844B2 (ja) * 2013-11-06 2018-02-21 Hoya株式会社 薄膜付き基板及び転写用マスクの製造方法
JP6713251B2 (ja) * 2015-03-30 2020-06-24 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法
JP6565471B2 (ja) * 2015-08-19 2019-08-28 Ａｇｃ株式会社 マスクブランクス用ガラス基板
JP6586934B2 (ja) 2015-09-17 2019-10-09 Ａｇｃ株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
JP2017075997A (ja) * 2015-10-13 2017-04-20 旭硝子株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
KR102646681B1 (ko) 2016-03-31 2024-03-12 호야 가부시키가이샤 반사형 마스크 블랭크의 제조 방법, 반사형 마스크의 제조 방법 및 반도체 장치의 제조 방법
JP7492456B2 (ja) * 2018-11-07 2024-05-29 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000029202A (ja) * 1998-07-15 2000-01-28 Nikon Corp マスクの製造方法
JP4397496B2 (ja) * 2000-02-25 2010-01-13 Ｏｋｉセミコンダクタ株式会社 反射型露光マスクおよびｅｕｖ露光装置
JP2003248299A (ja) * 2002-02-26 2003-09-05 Toshiba Corp マスク基板およびその製造方法
JP4212025B2 (ja) * 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004170948A (ja) * 2002-10-30 2004-06-17 Nikon Corp パターン転写用マスク、マスク作製方法及び露光方法
JP2004193269A (ja) * 2002-12-10 2004-07-08 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP2005241688A (ja) * 2004-02-24 2005-09-08 Toppan Printing Co Ltd フォトマスクの描画方法
JP4408732B2 (ja) * 2004-03-24 2010-02-03 Ｎｅｃエレクトロニクス株式会社 ホールパターンの形成方法
JP4157486B2 (ja) * 2004-03-24 2008-10-01 株式会社東芝 描画パターンデータの生成方法及びマスクの描画方法
JP2006113221A (ja) * 2004-10-14 2006-04-27 Renesas Technology Corp マスクの修正方法
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
JP5279840B2 (ja) * 2008-11-27 2013-09-04 Ｈｏｙａ株式会社 多層反射膜付基板及び反射型マスクブランク並びに反射型マスクの製造方法

Also Published As

Publication number Publication date
JPWO2008129914A1 (ja) 2010-07-22
WO2008129914A1 (fr) 2008-10-30
TW200849332A (en) 2008-12-16
JP5327046B2 (ja) 2013-10-30

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