TWI469112B - Pixel array and display panel - Google Patents
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Description
本發明是有關於一種顯示陣列以及顯示面板,且特別是有關於一種畫素陣列以及具有該畫素陣列之顯示面板。 The present invention relates to a display array and a display panel, and more particularly to a pixel array and a display panel having the pixel array.
為因應現代產品高速度、高效能、且輕薄短小的要求,各電子零件皆積極地朝體積小型化發展。各種攜帶式電子裝置也已漸成主流,例如:筆記型電腦(Note Book)、行動電話(Cell Phone)、電子辭典、個人數位助理器(Personal Digital Assistant,PDA)、上網機(web pad)及平板型電腦(Tablet PC)等。對於攜帶式電子裝置的影像顯示器而言,為了符合產品趨向小型化之需求,具有空間利用效率佳、高畫質、低消耗功率、無輻射等優越特性之平面顯示器,目前已被廣為使用。 In response to the requirements of high speed, high efficiency, light weight and shortness of modern products, all electronic components are actively developing towards miniaturization. A variety of portable electronic devices have also become mainstream, such as: Note Book, Cell Phone, electronic dictionary, Personal Digital Assistant (PDA), web pad and Tablet PC, etc. For the image display of the portable electronic device, in order to meet the demand for miniaturization of the product, a flat panel display having superior space utilization efficiency, high image quality, low power consumption, and no radiation is widely used.
一般而言,平面顯示器中主要是由一顯示面板以及多個驅動晶片(Driver IC)所構成,其中顯示面板上具有畫素陣列,而畫素陣列中的畫素是藉由對應之掃描線以及對應之資料線所驅動。為了使得平面顯示器的產品更為普及,業者皆如火如荼地進行降低成本作業,由於資料驅動晶片的造價較為昂貴,且資料驅動晶片所處理的訊號較為複雜、耗電量較高,近年來一種資料驅動晶片減半(half source driver)的技術被提出,其主要是利用畫素陣列上的佈局來降低資料驅動晶片的使用量,以降低成本。 In general, a flat panel display is mainly composed of a display panel and a plurality of driver ICs, wherein the display panel has a pixel array, and the pixels in the pixel array are corresponding to the scan lines and Driven by the corresponding data line. In order to make the products of flat-panel displays more popular, the industry is in full swing to reduce costs. Because the cost of data-driven chips is relatively expensive, and the signals processed by data-driven chips are more complicated and consume more power, in recent years, a data-driven A technique of half source driver is proposed, which mainly uses the layout on the pixel array to reduce the amount of data driven wafers used to reduce costs.
此外,為了符合消費者對於平面顯示器具有朝向低價以及高品質的期待,在畫素陣列的佈局上亦需將製程上所不可避免的製造誤差一併納入考量,以使得實際產品更具市場競爭力。舉例而言,畫素陣列上的多個畫素分別藉由對應的主動元件來進行資料訊號的寫入。然而,當機台的精密度不足或是製程上的對位誤差時,主動元件的閘極與源極、汲極之間會產生相對位移而使主動元件的特性偏離原有的設計值。換句話說,當主動元件的閘極與汲極產生相對位移時,畫素中之主動元件的閘極與汲極之間重疊面積的改變將使閘極-汲極寄生電容Cgd(parasitic capacitance,Cgd)產生變化,而當畫素陣列中畫素的閘極-汲極寄生電容Cgd差異性大時,容易在顯示過程中產生閃爍以及顯示不均的問題,嚴重影響顯示品質。 In addition, in order to meet consumers' expectations for low-cost and high-quality flat-panel displays, it is necessary to take into account the manufacturing errors that are inevitable in the layout of the pixel array, so that the actual products are more competitive in the market. force. For example, a plurality of pixels on a pixel array perform data signal writing by corresponding active components. However, when the precision of the machine is insufficient or the alignment error on the process, the relative displacement between the gate of the active device and the source and the drain will cause the characteristics of the active component to deviate from the original design value. In other words, when the gate and the drain of the active device are relatively displaced, the change in the overlap area between the gate and the drain of the active element in the pixel will cause the gate-drain parasitic capacitance Cgd (parasitic capacitance, Cgd) produces a change, and when the gate-drain parasitic capacitance Cgd of the pixel in the pixel array has a large difference, it is easy to cause flicker and display unevenness in the display process, which seriously affects the display quality.
本發明提供一種畫素陣列,其可減少製作過程中因對位偏移造成的閘極-汲極寄生電容的變異。 The present invention provides a pixel array that reduces variation in gate-drain parasitic capacitance due to alignment offset during fabrication.
本發明提供一種顯示面板,其可改善相鄰畫素之間因製程對位偏移造成的閘極-汲極寄生電容的變異,因而有助於提高顯示品質。 The present invention provides a display panel which can improve variations in gate-drain parasitic capacitance caused by process alignment offset between adjacent pixels, thereby contributing to improvement in display quality.
本發明提出一種畫素陣列,其包括多條掃描線、多條資料線、多個第一畫素以及多個第二畫素。資料線與掃描線相交,其中每一資料線在其一側與相鄰兩奇數條掃描線定義出第一畫素區,且在此資料線的另一側與相鄰兩偶數條掃描線定義第二畫素區,第一畫素區與第二畫素區相鄰且分別位於資料線的兩側。第一畫素分別位於第一畫素區內,每一第一畫素包括一第一電晶體與一第一 畫素電極。第二畫素分別位於每一第二畫素區內,每一第二畫素包括一第二電晶體與一第二畫素電極,且同一條資料線兩側的該些第一畫素與該些第二畫素電性連接至該資料線。其中,每一第一電晶體的一第一汲極自每一第一電晶體的一第一閘極的突出方向與每一第二電晶體的一第二汲極自每一第二電晶體的一第二閘極的突出方向一致。 The invention provides a pixel array comprising a plurality of scan lines, a plurality of data lines, a plurality of first pixels, and a plurality of second pixels. The data line intersects the scan line, wherein each data line defines a first pixel area on one side and two adjacent odd-numbered scan lines, and is defined on the other side of the data line and adjacent two even-numbered scan lines In the second pixel area, the first pixel area is adjacent to the second pixel area and is located on both sides of the data line. The first pixels are respectively located in the first pixel region, and each of the first pixels includes a first transistor and a first pixel Pixel electrode. The second pixels are respectively located in each of the second pixel regions, and each of the second pixels includes a second transistor and a second pixel electrode, and the first pixels on both sides of the same data line are The second pixels are electrically connected to the data line. Wherein a first drain of each first transistor protrudes from a first gate of each first transistor and a second drain of each second transistor from each second transistor A second gate protrudes in the same direction.
本發明另提出一種顯示面板,其包括一畫素陣列基板、一對向基板以及一顯示介質層。畫素陣列基板包括一基板、多條掃描線以及多條資料線、多個第一畫素以及多個第二畫素,其中掃描線以及資料線配置於基板上,資料線與掃描線相交,每一資料線在其一側與相鄰兩奇數條掃描線定義出一第一畫素區,且在其另一側與相鄰兩偶數條掃描線定義一第二畫素區,第一畫素區與第二畫素區相鄰且分別位於資料線的兩側。第一畫素分別位於第一畫素區內,每一第一畫素包括一第一電晶體與一第一畫素電極。第二畫素分別位於第二畫素區內,每一第二畫素包括一第二電晶體與一第二畫素電極,且同一條資料線兩側的該些第一畫素與該些第二畫素電性連接至該資料線。其中,每一第一電晶體的一第一汲極自每一第一電晶體的一第一閘極的突出方向與每一第二電晶體的一第二汲極自每一第二電晶體的一第二閘極的突出方向一致。 The invention further provides a display panel comprising a pixel array substrate, a pair of substrates and a display medium layer. The pixel array substrate includes a substrate, a plurality of scan lines and a plurality of data lines, a plurality of first pixels, and a plurality of second pixels, wherein the scan lines and the data lines are disposed on the substrate, and the data lines intersect the scan lines. Each data line defines a first pixel area on one side and two adjacent odd-numbered scan lines, and defines a second pixel area on the other side and adjacent two even-numbered scan lines, the first picture The prime region is adjacent to the second pixel region and is located on both sides of the data line. The first pixels are respectively located in the first pixel region, and each of the first pixels includes a first transistor and a first pixel electrode. The second pixels are respectively located in the second pixel region, and each of the second pixels includes a second transistor and a second pixel electrode, and the first pixels on both sides of the same data line and the second pixels The second pixel is electrically connected to the data line. Wherein a first drain of each first transistor protrudes from a first gate of each first transistor and a second drain of each second transistor from each second transistor A second gate protrudes in the same direction.
在本發明之一實施例中,在上述之每一第一電晶體中,第一閘極與奇數條掃描線的其中之一連接,第一汲極與第一閘極在一投影方向上具有一第一重疊區域而產生一第一閘極-汲極寄生電容,在上述之每一第二電晶體中,第二閘極與偶數條掃描線的其中之一連接,第二汲極與第二閘極在投影方向上具有一第二重疊區域 而產生一第二閘極-汲極寄生電容,且第二汲極、第二閘極、第一汲極以及第一閘極被設置為:當第一重疊區域減小而導致第一閘極-汲極寄生電容降低時,第二重疊區域相應地減小以使第二閘極-汲極寄生電容降低,當第一重疊區域變大而導致第一閘極-汲極寄生電容增加時,第二重疊區域相應地變大以使第二閘極-汲極寄生電容增加。 In an embodiment of the invention, in each of the first transistors, the first gate is connected to one of the odd scan lines, and the first drain and the first gate have a projection direction. a first overlap region generates a first gate-drain parasitic capacitance, and in each of the second transistors, the second gate is connected to one of the even scan lines, and the second drain and the second The second gate has a second overlapping area in the projection direction And generating a second gate-drain parasitic capacitance, and the second drain, the second gate, the first drain, and the first gate are set to: when the first overlap region is reduced to cause the first gate When the drain parasitic capacitance is lowered, the second overlap region is correspondingly reduced to reduce the second gate-drain parasitic capacitance, and when the first overlap region becomes large, causing the first gate-drain parasitic capacitance to increase, The second overlap region is correspondingly enlarged to increase the second gate-drain parasitic capacitance.
在本發明之一實施例中,在上述與同一條資料線連接的第一畫素與第二畫素中,第一電晶體與第二電晶體的結構呈現線對稱於此資料線的型態。 In an embodiment of the present invention, in the first pixel and the second pixel connected to the same data line, the structures of the first transistor and the second transistor exhibit line symmetry of the type of the data line. .
在本發明之一實施例中,上述之第一汲極例如自第一重疊區域沿著行方向凸出的方向與第二汲極自第二重疊區域凸出的方向一致。 In an embodiment of the invention, the first drain is aligned in a direction from the first overlap region in the row direction, and a direction in which the second drain protrudes from the second overlap region.
在本發明之一實施例中,上述之第一汲極例如自第一重疊區域沿著列方向凸出的方向與第二汲極自第二重疊區域凸出的方向一致。 In an embodiment of the invention, the first drain is aligned, for example, from a direction in which the first overlap region protrudes in the column direction and a direction in which the second drain protrudes from the second overlap region.
在本發明之一實施例中,上述之位於奇數行的第一畫素彼此對齊,位於偶數行的第二畫素彼此對齊,且第一畫素與第二畫素彼此不對齊。 In an embodiment of the invention, the first pixels located in the odd rows are aligned with each other, the second pixels in the even rows are aligned with each other, and the first pixels and the second pixels are not aligned with each other.
在本發明之一實施例中,上述之與第一畫素電性連接的奇數條掃描線作為第二畫素的下電容電極,且與第二畫素電性連接的偶數條掃描線作為第一畫素的下電容電極。 In an embodiment of the invention, the odd-numbered scan lines electrically connected to the first pixel are used as the lower capacitor electrode of the second pixel, and the even-numbered scan lines electrically connected to the second pixel are used as the first A pixel lower capacitor electrode.
在本發明之一實施例中,上述之每一第一畫素更包括一位於第一畫素區內的第一上電容電極,且在每一第一畫素中,第一上電容 電極與位於第一畫素電極下方的偶數列掃描線重疊以構成一第一儲存電容。此時,在每一第一畫素中,第一畫素電極例如與第一上電容電極電性連接。 In an embodiment of the invention, each of the first pixels further includes a first upper capacitor electrode located in the first pixel region, and in each first pixel, the first upper capacitor The electrode overlaps the even column scan line below the first pixel electrode to form a first storage capacitor. At this time, in each of the first pixels, the first pixel electrode is electrically connected to, for example, the first upper capacitor electrode.
在本發明之一實施例中,上述之每一第二畫素更包括一位於第二畫素區內的第二上電容電極,且在每一第二畫素中,第二上電容電極例如與位於第二畫素電極下方的奇數列掃描線重疊以構成一第二儲存電容。此時,在每一第二畫素中,第二畫素電極與第二上電容電極電性連接。 In an embodiment of the invention, each of the second pixels further includes a second upper capacitor electrode located in the second pixel region, and in each second pixel, the second upper capacitor electrode is, for example, An odd column scan line located below the second pixel electrode is overlapped to form a second storage capacitor. At this time, in each second pixel, the second pixel electrode is electrically connected to the second upper capacitor electrode.
基於上述,本發明之畫素陣列與顯示面板利用同一條資料線將對應的訊號寫入相鄰兩行的畫素中,因此可以達到資料驅動晶片減半(half source driver),降低成本。此外,對於與同一條資料線電性連接且位於該資料線兩側的電晶體中的閘極與汲極的形態設置為使其汲極與閘極重疊區域同步減小或變大,以使得畫素陣列上各畫素因汲極與閘極重疊區域變化所導致的閘極-汲極寄生電容變化趨於一致,藉此可避免在顯示過程中產生閃爍和顯示不均的問題,提升顯示品質。 Based on the above, the pixel array and the display panel of the present invention use the same data line to write the corresponding signals into the pixels of the adjacent two rows, thereby achieving a data driven wafer half source driver and reducing the cost. In addition, the gate and the drain of the transistor electrically connected to the same data line and located on both sides of the data line are arranged such that the drain and gate overlap regions are synchronously reduced or enlarged, so that The variation of the gate-drain parasitic capacitance caused by the variation of the drain and gate overlap regions of the pixel array tends to be uniform, thereby avoiding the problem of flicker and display unevenness during display, and improving display quality. .
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
200‧‧‧畫素陣列 200‧‧‧ pixel array
210、210B‧‧‧第一畫素 210, 210B‧‧‧ first pixels
210R‧‧‧第一畫素區 210R‧‧‧ first picture area
218‧‧‧第一上電容電極 218‧‧‧First upper capacitor electrode
210、210A、210B‧‧‧第一畫素 210, 210A, 210B‧‧‧ first pixels
212、212’、212’’‧‧‧第一電晶體 212, 212', 212''‧‧‧ first transistor
212D‧‧‧第一汲極 212D‧‧‧First bungee
212G‧‧‧第一閘極 212G‧‧‧first gate
212S‧‧‧第一源極 212S‧‧‧first source
214‧‧‧第一畫素電極 214‧‧‧ first pixel electrode
216‧‧‧第一重疊區域 216‧‧‧First overlapping area
220、220B‧‧‧第二畫素 220, 220B‧‧‧ second picture
222、222’、222’’‧‧‧第二電晶體 222, 222', 222'' ‧ ‧ second transistor
222D‧‧‧第二汲極 222D‧‧‧Second bungee
222G‧‧‧第二閘極 222G‧‧‧second gate
222S‧‧‧第二源極 222S‧‧‧second source
224‧‧‧第二畫素電極 224‧‧‧second pixel electrode
226‧‧‧第二重疊區域 226‧‧‧Second overlapping area
Cgd1‧‧‧第一閘極-汲極寄生電容 Cgd1‧‧‧first gate-bungee parasitic capacitance
Cgd2‧‧‧第二閘極-汲極寄生電容 Cgd2‧‧‧Second gate-bungee parasitic capacitance
D、D4、D5‧‧‧資料線 D, D4, D5‧‧‧ data lines
S、S4-S7、S1-S8‧‧‧掃描線 S, S4-S7, S1-S8‧‧‧ scan lines
SE、SE1、SE2、SE3、SE4‧‧‧偶數條掃描線 SE, SE1, SE2, SE3, SE4‧‧‧ even scan lines
SO、SO1、SO2、SO3、SO4‧‧‧奇數條掃描線 SO, SO1, SO2, SO3, SO4‧‧‧ odd scan lines
Y1‧‧‧第一方向 Y1‧‧‧ first direction
217‧‧‧保護層 217‧‧‧Protective layer
219、229‧‧‧下電容電極 219, 229‧‧‧ capacitor electrode
220、220A、220B‧‧‧第二畫素 220, 220A, 220B‧‧‧ second picture
220R‧‧‧第二畫素區 220R‧‧‧Second Picture Area
228‧‧‧第二上電容電極 228‧‧‧Second upper capacitor electrode
300‧‧‧顯示面板 300‧‧‧ display panel
310‧‧‧畫素陣列基板 310‧‧‧ pixel array substrate
320‧‧‧對向基板 320‧‧‧ opposite substrate
330‧‧‧顯示介質層 330‧‧‧Display media layer
Cst1‧‧‧第一儲存電容 Cst1‧‧‧first storage capacitor
Cst2‧‧‧第二儲存電容 Cst2‧‧‧Second storage capacitor
D、D1-5‧‧‧資料線 D, D1-5‧‧‧ data line
H1、H2‧‧‧開口 H1, H2‧‧‧ openings
圖1A為本發明一實施例中的一種畫素陣列的上視示意圖。 1A is a top plan view of a pixel array in accordance with an embodiment of the present invention.
圖1B為圖1A之B處之畫素陣列的局部放大圖。 Figure 1B is a partial enlarged view of the pixel array at B of Figure 1A.
圖2A與圖2B進一步繪示圖1B中與同一條資料線連接的一組相鄰之第一畫素與第二畫素因製程上對位偏移時的示意圖。 2A and FIG. 2B are further schematic diagrams showing a set of adjacent first pixels and second pixels connected to the same data line in FIG. 1B due to alignment offset on the process.
圖3A為本發明一實施例之第一畫素的儲存電容上視圖,而圖3B為圖3A中沿AA、BB剖面線的剖面圖。 3A is a top view of a storage capacitor of a first pixel according to an embodiment of the present invention, and FIG. 3B is a cross-sectional view taken along line AA and BB of FIG. 3A.
圖4為本發明之一實施例的一種顯示面板的示意圖。 4 is a schematic diagram of a display panel according to an embodiment of the invention.
圖1A為本發明一實施例中的一種畫素陣列的上視示意圖。請參照圖1A,畫素陣列200包括多條掃描線S、多條資料線D、多個第一畫素210以及多個第二畫素220。資料線D與掃描線S相交,每一資料線D與相鄰兩奇數條掃描線SO定義出第一畫素區210R,且在此資料線D的另一側與相鄰兩偶數條掃描線SE定義第二畫素區220R,第一畫素區210R與第二畫素區220R相鄰且分別位於資料線D的兩側。第一畫素210與第二畫素220分別位於第一畫素區210R內以及第二畫素區220R內。更詳細而言,在本實施例以第一畫素210A為例,其位於資料線D1的左側,且為在相鄰兩奇數條掃描線SO1以及SO2之間,此處的掃描線SO1與SO2例如為第一條掃描線S1與第三條掃描線S3。並且以相鄰於第一畫素210A之第二畫素220A為例,第二畫素220A是位於資料線D1的右側,且位在相鄰兩偶數條掃描線SE1以及SE2之間,此處的掃描線SE1與SE2例如為第二條掃描線S2與第四條掃描線S4。第一畫素210與第二畫素220的形狀、尺寸等型態大體上一致,換言之,在本實施例中,位於奇數行的第一畫素210彼此對齊,位於偶數行的第二畫素220彼此對齊,但由於第一畫素210與第二畫素220在行方向設置於不同掃描線S之間,因此第一畫素210與第二畫素220彼此不對齊。 1A is a top plan view of a pixel array in accordance with an embodiment of the present invention. Referring to FIG. 1A, the pixel array 200 includes a plurality of scan lines S, a plurality of data lines D, a plurality of first pixels 210, and a plurality of second pixels 220. The data line D intersects with the scan line S, each data line D and two adjacent odd-numbered scan lines SO define a first pixel area 210R, and the other side of the data line D and the adjacent two even-numbered scan lines The SE defines a second pixel region 220R, and the first pixel region 210R is adjacent to the second pixel region 220R and is located on both sides of the data line D. The first pixel 210 and the second pixel 220 are located in the first pixel region 210R and in the second pixel region 220R, respectively. In more detail, in the embodiment, the first pixel 210A is taken as an example, which is located on the left side of the data line D1 and between the adjacent two odd-numbered scanning lines SO1 and SO2, where the scanning lines SO1 and SO2 are located. For example, the first scanning line S1 and the third scanning line S3. And taking the second pixel 220A adjacent to the first pixel 210A as an example, the second pixel 220A is located on the right side of the data line D1 and is located between the adjacent two even-numbered scanning lines SE1 and SE2, where The scan lines SE1 and SE2 are, for example, a second scan line S2 and a fourth scan line S4. The first pixel 210 and the second pixel 220 generally conform to the shape, size, and the like. In other words, in the present embodiment, the first pixels 210 located in the odd rows are aligned with each other, and the second pixels in the even rows are aligned. The 220s are aligned with each other, but since the first pixel 210 and the second pixel 220 are disposed between the different scanning lines S in the row direction, the first pixels 210 and the second pixels 220 are not aligned with each other.
更進一步而言,圖1B為圖1A之B處之畫素陣列的局部放大圖。請同時參照圖1A與圖1B,每一第一畫素210包括第一電晶體212與第 一畫素電極214,其中第一電晶體212的第一閘極212G與奇數條掃描線SO的其中之一(如掃描線SO3)連接,例如圖1B中第一畫素210B中的第一閘極212G與第五條掃描線S5連接。第一電晶體212的第一源極212S與資料線D的其中之一連接,如第一畫素210B中的第一源極212S與資料線D4連接。第一電晶體212的第一汲極212D與第一畫素電極214連接,且第一汲極212D與第一閘極212G在一投影方向上具有第一重疊區域216而產生第一閘極-汲極寄生電容Cgd1。另一方面,每一第二畫素220包括第二電晶體222與第二畫素電極224,其中第二電晶體222的第二閘極222G與偶數條掃描線SE的其中之一(如掃描線SE3)連接,例如第二畫素210B中的第一閘極212G與第六條掃描線S6連接。第二電晶體222的第二源極222S與第一電晶體212第一源極212S連接同一條資料線D4,而第二電晶體222的第二汲極222D與第二畫素電極224連接,且第二汲極222D與第二閘極222G在一投影方向上具有第二重疊區域226而產生一第二閘極-汲極寄生電容Cgd2。 Furthermore, FIG. 1B is a partial enlarged view of the pixel array at B of FIG. 1A. Referring to FIG. 1A and FIG. 1B simultaneously, each first pixel 210 includes a first transistor 212 and a first a pixel electrode 214, wherein the first gate 212G of the first transistor 212 is connected to one of the odd scan lines SO (such as the scan line SO3), such as the first gate in the first pixel 210B in FIG. 1B. The pole 212G is connected to the fifth scanning line S5. The first source 212S of the first transistor 212 is connected to one of the data lines D, for example, the first source 212S of the first pixel 210B is connected to the data line D4. The first drain 212D of the first transistor 212 is coupled to the first pixel electrode 214, and the first drain 212D and the first gate 212G have a first overlap region 216 in a projection direction to generate a first gate. Bungee parasitic capacitance Cgd1. On the other hand, each second pixel 220 includes a second transistor 222 and a second pixel electrode 224, wherein the second gate 222G of the second transistor 222 and one of the even scan lines SE (such as scanning) The line SE3) is connected, for example, the first gate 212G of the second pixel 210B is connected to the sixth scanning line S6. The second source 222S of the second transistor 222 is connected to the first data line D4 of the first transistor 212 and the second source 222D of the second transistor 222 is connected to the second pixel electrode 224. The second drain 222D and the second gate 222G have a second overlap region 226 in a projection direction to generate a second gate-drain parasitic capacitance Cgd2.
值得注意的是,考量製程中的不同膜層(例如形成閘極與掃描線的第一金屬層以及形成源極、汲極與資料線的第二金屬層)之間對位偏移所造成的閘極-汲極寄生電容Cgd的變異,本實施例如圖1B所示,在第一畫素210之第一電晶體212與第二畫素220之第二電晶體222中,第二汲極222D、第二閘極222G、第一汲極212D以及第一閘極212G的設置型態必須具有如下的關係:使第一畫素210之第一汲極212D與第一閘極212G的第一重疊區域216與第二畫素220之第二汲極222D與第二閘極222G的第二重疊區域226同步地減小或同步地變大,以使得第一畫素210與第二畫素220之間因汲極與閘極重疊區域變化所導致的第一閘極-汲極寄生電容變化 Cgd1以及第二閘極-汲極寄生電容變化Cgd2趨於一致,藉此避免閃爍和顯示不均問題。亦即,當第一重疊區域216減小而導致第一閘極-汲極寄生電容Cgd1降低時,第二重疊區域226相應地減小以使第二閘極-汲極寄生電容Cgd2降低,當第一重疊區域216變大而導致第一閘極-汲極寄生電容Cgd1增加時,第二重疊區域226相應地變大以使第二閘極-汲極寄生電容Cgd2增加。 It is worth noting that the difference in the alignment between the different layers of the process (such as the first metal layer forming the gate and the scan line and the second metal layer forming the source, the drain and the data line) is considered. Variation of the gate-drain parasitic capacitance Cgd, as shown in FIG. 1B, in the first transistor 212 of the first pixel 210 and the second transistor 222 of the second pixel 220, the second drain 222D The setting pattern of the second gate 222G, the first drain 212D, and the first gate 212G must have a relationship of first overlapping the first drain 212D of the first pixel 210 with the first gate 212G. The region 216 is reduced in size or synchronously with the second drain region 222D of the second pixel 220 and the second overlap region 226 of the second gate 222G such that the first pixel 210 and the second pixel 220 Variation of the first gate-drain parasitic capacitance caused by the variation of the drain and gate overlap regions Cgd1 and the second gate-drain parasitic capacitance change Cgd2 tend to be uniform, thereby avoiding flicker and display unevenness problems. That is, when the first overlap region 216 is decreased to cause the first gate-drain parasitic capacitance Cgd1 to decrease, the second overlap region 226 is correspondingly reduced to lower the second gate-drain parasitic capacitance Cgd2. When the first overlap region 216 becomes large and the first gate-drain parasitic capacitance Cgd1 increases, the second overlap region 226 becomes correspondingly larger to increase the second gate-drain parasitic capacitance Cgd2.
更進一步來說,下文將詳細說明本發明第一畫素與第二畫素的佈局型態。如圖1A與圖1B所示,在與同一條資料線D連接的第一畫素210與第二畫素220中,第一電晶體212與第二電晶體222的結構呈現線對稱於此資料線D的型態。在本實施例中,第一汲極212D自第一重疊區域216沿著行方向凸出的方向與第二汲極222D自第二重疊區域226凸出的方向一致。舉例而言,第一畫素210的第一汲極212D例如是自第一閘極212G沿著資料線D的方向往第一方向Y1延伸,同樣地,第二畫素220的第二汲極222D亦自第二閘極222G沿著資料線D的方向往第一方向Y1延伸。如此一來,可使第一汲極212D與第一閘極212G之間的第一重疊區域216與第二汲極222D與第二閘極222G之間的第二重疊區域226在發生對位偏移時同步地減小或同步地變大,以使得畫素因汲極與閘極重疊區域變化所導致的閘極-汲極寄生電容變化趨於一致,藉此避免閃爍和顯示不均問題。尤其可有效防止因垂直方向的對位偏移產生閘極-汲極寄生電容變化所導致的閃爍和顯示不均問題。 Further, the layout pattern of the first pixel and the second pixel of the present invention will be described in detail below. As shown in FIG. 1A and FIG. 1B, in the first pixel 210 and the second pixel 220 connected to the same data line D, the structures of the first transistor 212 and the second transistor 222 are line-symmetric. The type of line D. In the present embodiment, the direction in which the first drain 212D protrudes from the first overlap region 216 in the row direction coincides with the direction in which the second drain 222D protrudes from the second overlap region 226. For example, the first drain 212D of the first pixel 210 extends, for example, from the first gate 212G along the direction of the data line D to the first direction Y1, and likewise, the second drain of the second pixel 220. 222D also extends from the second gate 222G in the direction of the data line D toward the first direction Y1. In this way, the first overlap region 216 between the first drain 212D and the first gate 212G and the second overlap region 226 between the second drain 222D and the second gate 222G may be offset. The shift time is synchronously reduced or synchronously increased, so that the gate-drain parasitic capacitance variation due to the variation of the drain and gate overlap regions tends to be uniform, thereby avoiding flicker and display unevenness. In particular, it is effective to prevent flicker and display unevenness caused by gate-drain parasitic capacitance variation due to vertical alignment offset.
為更詳細說明本發明之特點,圖2A與圖2B進一步繪示圖1B中與同一條資料線連接的一組相鄰之第一畫素與第二畫素因製程上對位偏移時的示意圖,其中圖2A為汲極相對於閘極往第一方向Y1偏移 時的示意圖,而圖2B為汲極相對於閘極往第二方向Y2偏移時的示意圖。請先參照圖2A,以圖中位於左上方之第一畫素210的第一電晶體212以及位於右下方之第二畫素220為例,以虛線繪製的第一電晶體212以及第二電晶體222代表未偏移時的原始設計位置,而以實線繪製的第一電晶體212’與第二電晶體222’為汲極相對於閘極往第一方向Y1偏移後的位置。如圖2A所示,當第一重疊區域216’減小而導致第一閘極-汲極寄生電容Cgd1降低時,第二重疊區域226’相應地減小以使第二閘極-汲極寄生電容Cgd2降低。 To further illustrate the features of the present invention, FIG. 2A and FIG. 2B further illustrate a schematic diagram of a set of adjacent first pixels and second pixels connected to the same data line in FIG. 1B due to alignment offset on the process. , in which FIG. 2A is that the drain is offset from the gate to the first direction Y1 FIG. 2B is a schematic diagram showing a state in which the drain is offset from the gate in the second direction Y2. Referring first to FIG. 2A, the first transistor 212 of the first pixel 210 at the upper left and the second pixel 220 at the lower right of the figure are taken as an example, and the first transistor 212 and the second electrode are drawn in a broken line. The crystal 222 represents the original design position when not offset, and the first transistor 212' and the second transistor 222' drawn in solid lines are positions where the drain is offset from the gate in the first direction Y1. As shown in FIG. 2A, when the first overlap region 216' is decreased to cause the first gate-drain parasitic capacitance Cgd1 to decrease, the second overlap region 226' is correspondingly reduced to parasitize the second gate-dip The capacitance Cgd2 is lowered.
另一方面,請接著參照圖2B以圖中位於左上方之第一畫素210的第一電晶體212以及位於右下方之第二畫素220為例,以虛線繪製的第一電晶體212以及第二電晶體222代表未偏移時的原始設計位置,而以實線繪製的第一電晶體212’’與第二電晶體222’’為汲極相對於閘極往第一方向Y1偏移後的位置。如圖2B所示,當第一重疊區域216’’變大而導致第一閘極-汲極寄生電容Cgd1增加時,第二重疊區域226’’相應地變大以使第二閘極-汲極寄生電容Cgd2增加。 On the other hand, please refer to FIG. 2B, taking the first transistor 212 of the first pixel 210 located at the upper left in the figure and the second pixel 220 located at the lower right as an example, the first transistor 212 drawn by a broken line and The second transistor 222 represents the original design position when not offset, and the first transistor 212'' and the second transistor 222'' drawn in solid lines are offset from the gate to the first direction Y1 with respect to the gate. After the location. As shown in FIG. 2B, when the first overlap region 216'' becomes large to cause the first gate-drain parasitic capacitance Cgd1 to increase, the second overlap region 226" becomes correspondingly larger to make the second gate-汲The parasitic capacitance Cgd2 increases.
因此,即使於製作電晶體時不同膜層之間發生對位偏差(第二金屬層相對於第一金屬層)或是因機台精度的公差而產生些許偏移時,第一畫素210所產生的第一閘極-汲極寄生電容Cgd1的變化與第二畫素220所產生的第二閘極-汲極寄生電容Cgd2的變化可較為一致,此處所謂變化較為一致意指畫素陣列200上的每一畫素的閘極-汲極寄生電容Cgd會同時變大或同時變小。如此一來,相鄰兩畫素之間的亮度差異較小,且當畫素陣列200應用於顯示面板(繪示於圖4)時有助於提高顯示器的顯示均勻性,即可以避免 產生閃爍(flicker)而造成亮度不均勻的問題。 Therefore, even when a misalignment occurs between different film layers when the transistor is fabricated (the second metal layer is opposite to the first metal layer) or a slight offset due to the tolerance of the precision of the machine, the first pixel 210 The change of the generated first gate-drain parasitic capacitance Cgd1 is more consistent with the change of the second gate-drain parasitic capacitance Cgd2 generated by the second pixel 220. The so-called variation is more consistently means a pixel array. The gate-drain parasitic capacitance Cgd of each pixel on 200 will become larger or smaller at the same time. In this way, the difference in brightness between adjacent two pixels is small, and when the pixel array 200 is applied to the display panel (shown in FIG. 4), the display uniformity of the display is improved, thereby avoiding A problem occurs in which flicker is generated to cause uneven brightness.
此外,在本發明之畫素陣列200中,與第一畫素210電性連接的奇數條掃描線SO可進一步作為第二畫素220的下電容電極,且與第二畫素220電性連接的偶數條掃描線SE可進一步作為第一畫素210的下電容電極。以下將搭配圖3A與圖3B進一步說明第一畫素與第二畫素相互利用與對方電性連接之掃描線作為自身之下電容電極的儲存電容型態。 In addition, in the pixel array 200 of the present invention, the odd-numbered scan lines SO electrically connected to the first pixel 210 can further serve as the lower capacitor electrode of the second pixel 220, and are electrically connected to the second pixel 220. The even number of scan lines SE may further serve as the lower capacitor electrode of the first pixel 210. The following will be further described with reference to FIG. 3A and FIG. 3B to further illustrate that the first pixel and the second pixel mutually utilize the scan line electrically connected to each other as the storage capacitor type of the capacitor electrode under the self.
圖3A為本發明一實施例之第一畫素的儲存電容上視圖,而圖3B為圖3A中沿AA、BB剖面線的剖面圖。如圖3A與圖3B所示,在本實施例中,每一第一畫素210更包括一位於第一畫素區210R內的第一上電容電極218,且在每一第一畫素210中,與第二畫素220電性連接的偶數條掃描線SE作為第一畫素210的下電容電極219,且在本實施例中,第一畫素電極214與第一上電容電極218電性連接,使得第一畫素電極214、第一上電容電極218以及作為第一畫素210的下電容電極219的偶數列掃描線SE構成第一儲存電容Cst1,其中第一畫素電極214例如是經由保護層217之開口H1而與第一上電容電極218連接。另一方面,每一第二畫素220可以更包括一位於第二畫素區220R內的第二上電容電極228,且在每一第二畫素220中,與第一畫素210電性連接的奇數條掃描線SO作為第二畫素220的下電容電極229,且在本實施例中,第二畫素電極224與第二上電容電極228電性連接,使得第二畫素電極224、第二上電容電極228以及作為第二畫素220的下電容電極229的奇數列掃描線SO構成第二儲存電容Cst2,其中第二畫素電極224例如是經由保護層217之開口H2而與第二上電容電極228連接。 3A is a top view of a storage capacitor of a first pixel according to an embodiment of the present invention, and FIG. 3B is a cross-sectional view taken along line AA and BB of FIG. 3A. As shown in FIG. 3A and FIG. 3B, in the embodiment, each first pixel 210 further includes a first upper capacitor electrode 218 located in the first pixel region 210R, and at each first pixel 210. The even number of scan lines SE electrically connected to the second pixel 220 are used as the lower capacitor electrode 219 of the first pixel 210, and in the embodiment, the first pixel electrode 214 and the first upper capacitor electrode 218 are electrically The first pixel element 214, the first upper capacitor electrode 218, and the even column scan line SE as the lower capacitor electrode 219 of the first pixel 210 constitute a first storage capacitor Cst1, wherein the first pixel electrode 214 is, for example, It is connected to the first upper capacitor electrode 218 via the opening H1 of the protective layer 217. On the other hand, each second pixel 220 may further include a second upper capacitor electrode 228 located in the second pixel region 220R, and in each second pixel 220, electrically connected to the first pixel 210 The odd-numbered scan lines SO are connected as the lower capacitor electrodes 229 of the second pixel 220, and in the present embodiment, the second pixel electrodes 224 and the second upper capacitor electrodes 228 are electrically connected such that the second pixel electrodes 224 The second upper capacitor electrode 228 and the odd-numbered column scan line SO as the lower capacitor electrode 229 of the second pixel 220 constitute a second storage capacitor Cst2, wherein the second pixel electrode 224 is, for example, via the opening H2 of the protective layer 217. The second upper capacitor electrode 228 is connected.
圖4為依據本發明之一實施例的一種顯示面板的示意圖。請參照圖4,本實施例的顯示面板300包括一畫素陣列基板310、一對向基板320以及配置於畫素陣列基板310以及對向基板320之間的顯示介質層330。此處的畫素陣列基板310可以是具有本發明前述多個實施例所繪示的或是其他未繪示的畫素陣列200的基板。對向基板320例如是一彩色濾光基板。當然,在可能的情況下,對向基板320也可以是僅具有共用電極的玻璃基板或石英基板,而對應的畫素陣列基板310上則可能形成有彩色濾光層。在本實施例中,顯示介質層330例如是一液晶層,而顯示面板300為一液晶顯示面板300。當然,在其他實施例中,顯示介質層330也可能是電激發光(electroluminescent)材料,則顯示面板300為電激發光顯示面板300,其中電激發光材料例如是有機材料、無機材料或其組合。 4 is a schematic diagram of a display panel in accordance with an embodiment of the present invention. Referring to FIG. 4 , the display panel 300 of the present embodiment includes a pixel array substrate 310 , a pair of substrates 320 , and a display medium layer 330 disposed between the pixel array substrate 310 and the opposite substrate 320 . The pixel array substrate 310 herein may be a substrate having the pixel array 200 of the foregoing various embodiments of the present invention or other unillustrated pixels. The opposite substrate 320 is, for example, a color filter substrate. Of course, if possible, the opposite substrate 320 may be a glass substrate or a quartz substrate having only a common electrode, and a color filter layer may be formed on the corresponding pixel array substrate 310. In the embodiment, the display medium layer 330 is, for example, a liquid crystal layer, and the display panel 300 is a liquid crystal display panel 300. Of course, in other embodiments, the display medium layer 330 may also be an electroluminescent material, and the display panel 300 is an electroluminescent display panel 300, wherein the electroluminescent material is, for example, an organic material, an inorganic material, or a combination thereof. .
綜上所述,本發明之畫素陣列與顯示面板利用同一條資料線將對應的訊號寫入相鄰兩行的畫素中,因此可以達到資料驅動晶片減半(half source driver),降低成本。此外,對於與同一條資料線電性連接且位於該資料線兩側的電晶體中的閘極與汲極的形態設置為使其汲極與閘極重疊區域同步減小或變大,以使得畫素陣列上各畫素因汲極與閘極重疊區域變化所導致的閘極-汲極寄生電容趨於一致,藉此可避免在顯示過程中產生閃爍和顯示不均問題,提升顯示品質。 In summary, the pixel array and the display panel of the present invention use the same data line to write corresponding signals into the pixels of two adjacent rows, thereby achieving a data driven wafer half source driver and reducing the cost. . In addition, the gate and the drain of the transistor electrically connected to the same data line and located on both sides of the data line are arranged such that the drain and gate overlap regions are synchronously reduced or enlarged, so that The gate-drain parasitic capacitance of each pixel on the pixel array tends to be uniform due to the variation of the drain and gate overlap regions, thereby avoiding the occurrence of flicker and display unevenness during display, and improving display quality.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附 之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of protection of the present invention is attached The scope of the patent application is subject to change.
210、210B‧‧‧第一畫素 210, 210B‧‧‧ first pixels
212‧‧‧第一電晶體 212‧‧‧First transistor
212D‧‧‧第一汲極 212D‧‧‧First bungee
212G‧‧‧第一閘極 212G‧‧‧first gate
212S‧‧‧第一源極 212S‧‧‧first source
214‧‧‧第一畫素電極 214‧‧‧ first pixel electrode
216‧‧‧第一重疊區域 216‧‧‧First overlapping area
220、220B‧‧‧第二畫素 220, 220B‧‧‧ second picture
222‧‧‧第二電晶體 222‧‧‧second transistor
222D‧‧‧第二汲極 222D‧‧‧Second bungee
222G‧‧‧第二閘極 222G‧‧‧second gate
222S‧‧‧第二源極 222S‧‧‧second source
224‧‧‧第二畫素電極 224‧‧‧second pixel electrode
226‧‧‧第二重疊區域 226‧‧‧Second overlapping area
Cgd1‧‧‧第一閘極-汲極寄生電容 Cgd1‧‧‧first gate-bungee parasitic capacitance
Cgd2‧‧‧第二閘極-汲極寄生電容 Cgd2‧‧‧Second gate-bungee parasitic capacitance
D、D4、D5‧‧‧資料線 D, D4, D5‧‧‧ data lines
S、S4-S7‧‧‧掃描線 S, S4-S7‧‧‧ scan line
SE2、SE3‧‧‧偶數條掃描線 SE2, SE3‧‧‧ even scan lines
SO3、SO4‧‧‧奇數條掃描線 SO3, SO4‧‧‧ odd scan lines
Y1‧‧‧第一方向 Y1‧‧‧ first direction
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