TWI484022B - 化學機械拋光用之水性泥漿組成物以及化學機械拋光方法 - Google Patents

化學機械拋光用之水性泥漿組成物以及化學機械拋光方法 Download PDF

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Publication number
TWI484022B
TWI484022B TW098106334A TW98106334A TWI484022B TW I484022 B TWI484022 B TW I484022B TW 098106334 A TW098106334 A TW 098106334A TW 98106334 A TW98106334 A TW 98106334A TW I484022 B TWI484022 B TW I484022B
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TW
Taiwan
Prior art keywords
layer
polishing
acid
slurry composition
aqueous slurry
Prior art date
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TW098106334A
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English (en)
Chinese (zh)
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TW200948940A (en
Inventor
申東穆
崔銀美
曹昇範
河賢哲
Original Assignee
Ｌｇ化學股份有限公司
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Application filed by Ｌｇ化學股份有限公司 filed Critical Ｌｇ化學股份有限公司
Publication of TW200948940A publication Critical patent/TW200948940A/zh
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Publication of TWI484022B publication Critical patent/TWI484022B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW098106334A 2008-02-29 2009-02-27 化學機械拋光用之水性泥漿組成物以及化學機械拋光方法 TWI484022B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20080019103 2008-02-29
KR1020090009099A KR101202720B1 (ko) 2008-02-29 2009-02-05 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법

Publications (2)

Publication Number Publication Date
TW200948940A TW200948940A (en) 2009-12-01
TWI484022B true TWI484022B (zh) 2015-05-11

Family

ID=41016292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106334A TWI484022B (zh) 2008-02-29 2009-02-27 化學機械拋光用之水性泥漿組成物以及化學機械拋光方法

Country Status (7)

Country Link
US (1) US20100184291A1 (de)
EP (1) EP2247682A4 (de)
JP (1) JP2011515023A (de)
KR (1) KR101202720B1 (de)
CN (1) CN101679810B (de)
TW (1) TWI484022B (de)
WO (1) WO2009107986A1 (de)

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TWI780075B (zh) * 2016-12-28 2022-10-11 大陸商安集微電子科技(上海)股份有限公司 化學機械研磨液及其應用

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KR101906135B1 (ko) * 2010-09-08 2018-10-10 바스프 에스이 수성 연마 조성물 및 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마 방법
JPWO2013021946A1 (ja) * 2011-08-09 2015-03-05 株式会社フジミインコーポレーテッド 化合物半導体研磨用組成物
US20130045599A1 (en) * 2011-08-15 2013-02-21 Rohm and Electronic Materials CMP Holdings, Inc. Method for chemical mechanical polishing copper
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US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
CN104647197B (zh) * 2013-11-22 2019-01-04 安集微电子（上海）有限公司 一种用于抛光钽的化学机械抛光方法
CN104745085B (zh) * 2013-12-25 2018-08-21 安集微电子（上海）有限公司 一种用于钴阻挡层抛光的化学机械抛光液
KR101656414B1 (ko) * 2014-10-22 2016-09-12 주식회사 케이씨텍 분산성이 개선된 슬러리 조성물
KR101761789B1 (ko) * 2015-12-24 2017-07-26 주식회사 케이씨텍 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물
CN109971359B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
US11043396B2 (en) * 2018-07-31 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polish slurry and method of manufacture
IL283786B2 (en) * 2018-12-12 2025-08-01 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
CN111378972B (zh) * 2018-12-29 2024-09-13 安集微电子（上海）有限公司 一种化学机械抛光液
US20200308447A1 (en) * 2019-03-29 2020-10-01 Fujimi Corporation Compositions for polishing cobalt and low-k material surfaces
WO2020255602A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
JP7331103B2 (ja) * 2019-06-20 2023-08-22 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
JP7433042B2 (ja) * 2019-12-24 2024-02-19 ニッタ・デュポン株式会社 研磨用組成物
WO2021162111A1 (ja) * 2020-02-13 2021-08-19 昭和電工マテリアルズ株式会社 Ｃｍｐ研磨液及び研磨方法
KR102415203B1 (ko) * 2020-08-24 2022-06-30 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN114106704A (zh) * 2021-12-16 2022-03-01 河北工业大学 一种绿色环保型钛金属抛光液
KR102515722B1 (ko) * 2022-07-06 2023-03-30 영창케미칼 주식회사 구리 배리어층 연마용 cmp 슬러리 조성물
CN117004324B (zh) * 2023-08-25 2026-03-03 湖南二零八先进科技有限公司 用于激光陀螺腔体的抛光液及抛光方法

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TWI280273B (en) * 2001-07-23 2007-05-01 Fujimi Inc Polishing composition and polishing method employing it
TWI227728B (en) * 2002-06-07 2005-02-11 Cabot Microelectronics Corp CMP methods for low-k dielectric materials

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TWI780075B (zh) * 2016-12-28 2022-10-11 大陸商安集微電子科技(上海)股份有限公司 化學機械研磨液及其應用

Also Published As

Publication number Publication date
JP2011515023A (ja) 2011-05-12
WO2009107986A1 (en) 2009-09-03
CN101679810B (zh) 2014-06-18
KR20090093805A (ko) 2009-09-02
CN101679810A (zh) 2010-03-24
US20100184291A1 (en) 2010-07-22
EP2247682A1 (de) 2010-11-10
KR101202720B1 (ko) 2012-11-19
TW200948940A (en) 2009-12-01
EP2247682A4 (de) 2012-03-14

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