TWI484525B - - Google Patents
Info
- Publication number
- TWI484525B TWI484525B TW101143553A TW101143553A TWI484525B TW I484525 B TWI484525 B TW I484525B TW 101143553 A TW101143553 A TW 101143553A TW 101143553 A TW101143553 A TW 101143553A TW I484525 B TWI484525 B TW I484525B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110422141.9A CN103165368B (zh) | 2011-12-16 | 2011-12-16 | 一种温度可调的等离子体约束装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201338011A TW201338011A (zh) | 2013-09-16 |
| TWI484525B true TWI484525B (fr) | 2015-05-11 |
Family
ID=48588356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101143553A TW201338011A (zh) | 2011-12-16 | 2012-11-21 | 一種溫度可調的等離子體約束裝置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103165368B (fr) |
| TW (1) | TW201338011A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104299875A (zh) * | 2013-07-17 | 2015-01-21 | 中微半导体设备(上海)有限公司 | 一种电感耦合等离子体处理装置 |
| CN106898534B (zh) * | 2015-12-21 | 2019-08-06 | 中微半导体设备(上海)股份有限公司 | 等离子体约束环、等离子体处理装置与基片处理方法 |
| CN111383884B (zh) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | 等离子体约束系统及方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW294819B (fr) * | 1993-12-22 | 1997-01-01 | Tokyo Electron Co Ltd | |
| TW297135B (fr) * | 1995-03-20 | 1997-02-01 | Hitachi Ltd | |
| TW200616498A (en) * | 2004-07-13 | 2006-05-16 | Nordson Corp | Ultra high speed uniform plasma processing system |
| TWI308776B (en) * | 2006-12-27 | 2009-04-11 | Advanced Micro Fab Equip Inc | A plasma confinement apparatus |
| JP2011228133A (ja) * | 2010-04-20 | 2011-11-10 | Sharp Corp | プラズマ処理装置、プラズマ処理方法および半導体素子の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
| CN101150909B (zh) * | 2006-09-22 | 2010-05-12 | 中微半导体设备(上海)有限公司 | 等离子体约束装置 |
| CN101196750A (zh) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室 |
| US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| JP5357486B2 (ja) * | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2011
- 2011-12-16 CN CN201110422141.9A patent/CN103165368B/zh active Active
-
2012
- 2012-11-21 TW TW101143553A patent/TW201338011A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW294819B (fr) * | 1993-12-22 | 1997-01-01 | Tokyo Electron Co Ltd | |
| TW297135B (fr) * | 1995-03-20 | 1997-02-01 | Hitachi Ltd | |
| TW200616498A (en) * | 2004-07-13 | 2006-05-16 | Nordson Corp | Ultra high speed uniform plasma processing system |
| TWI308776B (en) * | 2006-12-27 | 2009-04-11 | Advanced Micro Fab Equip Inc | A plasma confinement apparatus |
| JP2011228133A (ja) * | 2010-04-20 | 2011-11-10 | Sharp Corp | プラズマ処理装置、プラズマ処理方法および半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201338011A (zh) | 2013-09-16 |
| CN103165368A (zh) | 2013-06-19 |
| CN103165368B (zh) | 2016-02-03 |