TWI487581B - Low carbon copper particles and methods for producing the same - Google Patents

Low carbon copper particles and methods for producing the same Download PDF

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TWI487581B
TWI487581B TW100129122A TW100129122A TWI487581B TW I487581 B TWI487581 B TW I487581B TW 100129122 A TW100129122 A TW 100129122A TW 100129122 A TW100129122 A TW 100129122A TW I487581 B TWI487581 B TW I487581B
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copper
particles
reduction
copper particles
low carbon
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TW201219128A (en
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Yoshinori Shimizu
Keita Furumoto
Hikaru Minowa
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Mitsui Mining & Smelting Co
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Description

低碳銅粒子及其製造方法Low carbon copper particle and manufacturing method thereof

本發明係關於一種碳含量降至極低之低碳銅粒子。本發明之低碳銅粒子特別適合用作例如用於印刷配線板之電路形成、或陶瓷電容器之外部電極之電氣導通確保的銅膏之原料。The present invention relates to a low carbon copper particle having an extremely low carbon content. The low carbon copper particles of the present invention are particularly suitable for use as a raw material for a copper paste, for example, for circuit formation of a printed wiring board or electrical conduction of an external electrode of a ceramic capacitor.

先前,作為形成電子零件等之電極或電路之方法,已知有將使作為導電性材料之銅粉分散於膏中而成之導電膏印刷於基板上後,焙燒該膏使其硬化而形成電路之方法。Conventionally, as a method of forming an electrode or a circuit of an electronic component or the like, it is known that a conductive paste obtained by dispersing a copper powder as a conductive material in a paste is printed on a substrate, and then the paste is baked and cured to form a circuit. The method.

例如,於陶瓷電容器之外部電極之導通中使用導電膏之情形時,於外部電極上塗佈導電膏,繼而藉由加熱進行脫黏合劑,其後燒結銅粒子。於該情形時,當銅粒子中所含之碳量過多時,存在由於焙燒而產生含有碳之氣體,並因該氣體而於導體中產生龜裂,或者使導體自基板剝離之情況。For example, when a conductive paste is used for conducting the external electrodes of the ceramic capacitor, a conductive paste is applied onto the external electrodes, and then a debonding agent is heated by heating, and then copper particles are sintered. In this case, when the amount of carbon contained in the copper particles is too large, a gas containing carbon is generated by baking, and cracks may be generated in the conductor due to the gas, or the conductor may be peeled off from the substrate.

成為導電膏之原料之銅粒子之製造方法大致分為霧化法所代表之乾式法與利用水中之銅離子之還原之濕式法,若採用乾式法,則具有銅粒子中難以混入碳之優點。然而,於乾式法中,在製造小粒徑之銅粒子方面存在極限。另一方面,根據濕式法,具有可容易地製造次微米級之微小銅粒子之優點,但另一方面,具有源自反應系統中所存在之分散劑或還原劑之碳大量混入之傾向。The method for producing copper particles which are raw materials for the conductive paste is roughly classified into a dry method represented by an atomization method and a wet method using reduction of copper ions in water, and if a dry method is used, there is an advantage that it is difficult to mix carbon in copper particles. . However, in the dry method, there is a limit in the production of copper particles having a small particle size. On the other hand, according to the wet method, there is an advantage that micron-sized micro-sized copper particles can be easily produced, but on the other hand, there is a tendency that a large amount of carbon derived from a dispersing agent or a reducing agent existing in the reaction system is mixed.

作為上述製造方法之一,本申請人先前提出有如下銅粉之製造方法,其係於具有二價銅離子之銅鹽水溶液中混合氫氧化鹼而生成氧化銅,藉由添加還原糖將氧化銅還原成氧化亞銅,進而藉由添加肼系還原劑而還原氧化亞銅,由此生成金屬銅者,且於銅鹽水溶液中預先投入錯合劑後,混合以反應當量計相當於1.10~1.60之氫氧化鹼,以生成黑色氧化銅之方式進行熟成反應(參照專利文獻1)。於該方法中,由於使用還原糖作為還原劑,故源自其之碳有可能混入銅粒子中。As one of the above-mentioned production methods, the present applicant has previously proposed a method for producing a copper powder by mixing an alkali hydroxide with an aqueous solution of a copper salt having a cupric ion to form copper oxide, and adding copper oxide by adding a reducing sugar. Reduction to cuprous oxide, reduction of cuprous oxide by addition of a lanthanide-based reducing agent, thereby producing copper metal, and pre-injecting a compounding agent in a copper salt aqueous solution, and mixing is equivalent to 1.10 to 1.60 in terms of reaction equivalent. The alkali hydroxide is subjected to a ripening reaction to form black copper oxide (see Patent Document 1). In this method, since reducing sugar is used as a reducing agent, carbon derived therefrom may be mixed into the copper particles.

因此,本申請人先前提出有使用磷酸化合物替代以濕式法製造銅粒子時使用之包含有機化合物之分散劑的銅粒子之製造方法(參照專利文獻2)。使用磷酸化合物之銅粒子之製造方法除此以外亦記載於例如專利文獻3中。Therefore, the present applicant has previously proposed a method for producing copper particles using a phosphoric acid compound instead of a dispersant containing an organic compound used in the production of copper particles by a wet method (see Patent Document 2). The method for producing copper particles using a phosphoric acid compound is also described in, for example, Patent Document 3.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本專利特開2003-342621號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-342621

[專利文獻2]日本專利特開2009-74152號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-74152

[專利文獻3]US5801318A[Patent Document 3] US5801318A

根據專利文獻2所記載之方法,可獲得碳含量較少之銅粒子。然而,於該方法中,為提高所得銅粒子之分散性且統一粒徑,而於步驟之中途進行洗淨,調整反應系統之pH值。pH值之調整係為提高分散性或獲得均勻粒徑之銅粒子所必需之操作,但相應地作業步驟增加,就生產性之方面而言,不可謂有利。又,即便進行上述pH值調整,分散性仍未達到應滿足之程度。According to the method described in Patent Document 2, copper particles having a small carbon content can be obtained. However, in this method, in order to improve the dispersibility of the obtained copper particles and to uniformize the particle diameter, it is washed in the middle of the step to adjust the pH of the reaction system. The pH adjustment is an operation necessary for improving dispersibility or obtaining copper particles having a uniform particle diameter, but correspondingly, the number of work steps is increased, which is not advantageous in terms of productivity. Further, even if the above pH adjustment is carried out, the dispersibility is not yet satisfactory.

於專利文獻3所記載之方法中,為控制反應而使用大量磷酸,故存在所得銅粒子中含有之磷之量變多之傾向。含有大量磷之銅粒子就導電性方面而言有時產生不利作用,又,廢液中之磷之量亦變多,就環境負荷方面而言,可謂欠佳。In the method described in Patent Document 3, since a large amount of phosphoric acid is used to control the reaction, the amount of phosphorus contained in the obtained copper particles tends to increase. Copper particles containing a large amount of phosphorus sometimes have an adverse effect on the conductivity, and the amount of phosphorus in the waste liquid also increases, which is not preferable in terms of environmental load.

因此,本發明之課題在於提供一種相比上述先前技術之銅粒子,各種特性得到進一步提高之低碳銅粒子。Accordingly, an object of the present invention is to provide a low carbon copper particle having further improved various characteristics compared to the copper particles of the prior art described above.

本發明藉由提供如下低碳銅粒子而解決上述課題,其特徵在於,碳含量未達0.01重量%,含有磷100~1000 ppm,藉由雷射繞射散射式粒度分佈測定法測得之累積體積90容量%下之體積累積粒徑D90 、與累積體積50容量%下之體積累積粒徑D50 之比D90 /D50 為1.3~2.5,且藉由圖像分析而測定之一次粒子之平均粒徑D為0.1~4 μm。The present invention solves the above problems by providing low carbon copper particles characterized by having a carbon content of less than 0.01% by weight, containing phosphorus of 100 to 1000 ppm, and accumulating by laser diffraction scattering particle size distribution measurement. volume cumulative particle diameter D 90 at a volume capacity of 90%, and 50 vol% cumulative volume of the volume cumulative particle diameter D 50 of the ratio D 90 / D 50 of 1.3 to 2.5, and measured by image analysis of the primary particles The average particle diameter D is 0.1 to 4 μm.

又,本發明提供如下之低碳銅粒子之製造方法作為上述低碳銅粒子之較佳之製造方法,其特徵在於,其係包括於含碳化學物種之不存在下(其中含碳銅化合物除外),向含有水溶性銅化合物之水溶液中添加還原劑而進行銅之還原之還原步驟的製造低碳銅粒子之方法,且於無助於還原反應之鹽存在11~15 mol/L之條件下,藉由還原而生成銅粒子。Further, the present invention provides a method for producing low carbon copper particles as a preferred method for producing the above low carbon copper particles, which is characterized by being included in the absence of a carbon-containing chemical species (excluding carbon-containing copper compounds) a method for producing low carbon copper particles by adding a reducing agent to an aqueous solution containing a water-soluble copper compound to carry out a reduction step of copper, and in the presence of a salt which does not contribute to the reduction reaction, in the presence of 11 to 15 mol/L, Copper particles are formed by reduction.

根據本發明,可提供一種碳含量經減少,並且為微粒且粒度分佈統一之銅粒子。According to the present invention, it is possible to provide a copper particle which has a reduced carbon content and which is fine particles and has a uniform particle size distribution.

以下,將本發明基於其較佳之實施形態進行說明。本發明之銅粒子之特徵之一在於碳含量經減少。本發明之銅粒子中之碳含量為未達0.01重量%之極少量,較佳為0.005重量%以下、進而較佳為0.003重量%以下。碳含量係使用堀場製作所製之碳分析裝置即EMIA-320V,藉由利用氧氣流中之燃燒-紅外線吸收方式之測定而求出。具體而言,於坩堝中加入0.5 g之試樣,進而加入助燃劑(鎢金屬1.5 g+錫金屬0.3 g),並將該坩堝設置於裝置內而進行測定。Hereinafter, the present invention will be described based on preferred embodiments thereof. One of the characteristics of the copper particles of the present invention is that the carbon content is reduced. The carbon content in the copper particles of the present invention is an extremely small amount of less than 0.01% by weight, preferably 0.005% by weight or less, more preferably 0.003% by weight or less. The carbon content was determined by measurement using a combustion-infrared absorption method in a gas stream, that is, EMIA-320V, which is a carbon analyzer manufactured by Horiba, Ltd. Specifically, a 0.5 g sample was added to the crucible, and a combustion improver (tungsten metal 1.5 g + tin metal 0.3 g) was further added, and the crucible was placed in the apparatus to measure.

於後步驟中對銅粒子之表面施加包含有機化合物之表面處理劑之情形時,去除該表面處理劑後測定碳含量。已知包含有機化合物之表面處理劑通常因200℃~300℃之加熱自銅粒子之表面消失,故於本發明中,利用上述方法對在大氣環境中以400℃加熱30分鐘後之銅粒子測定碳含量。In the case where a surface treatment agent containing an organic compound is applied to the surface of the copper particles in the subsequent step, the carbon content is measured after the surface treatment agent is removed. It is known that a surface treatment agent containing an organic compound generally disappears from the surface of the copper particles by heating at 200 ° C to 300 ° C. Therefore, in the present invention, copper particles after heating at 400 ° C for 30 minutes in an atmospheric environment are determined by the above method. Carbon content.

藉由將本發明之銅粒子中所含之碳量設為未達0.01重量%,以該銅粒子為原料而製造之導電膏於焙燒使用其所形成之導體時,難以發生於該導體上產生龜裂,或者自基板剝離之不良情形。其原因在於,銅粒子中所含之碳量經減少,故因碳而產生之氣體量減少。關於用以減少銅粒子中所含之碳量之具體手段,以下將作闡述。When the amount of carbon contained in the copper particles of the present invention is less than 0.01% by weight, the conductive paste produced using the copper particles as a raw material is hard to be produced on the conductor when the conductor formed by the use of the conductive paste is used for firing. Crack, or a problem of peeling from the substrate. The reason for this is that the amount of carbon contained in the copper particles is reduced, so that the amount of gas generated by carbon is reduced. Specific means for reducing the amount of carbon contained in the copper particles will be described below.

本發明之銅粒子中所含之碳以何種狀態存在尚不明確,推測例如以有機化合物或碳酸根之狀態存在。然而,碳以何種狀態存在,於本發明中並非臨界。It is not clear in which state the carbon contained in the copper particles of the present invention exists, and it is presumed that it exists, for example, in the state of an organic compound or a carbonate. However, the state in which carbon exists is not critical in the present invention.

本發明之銅粒子亦具有粒徑統一之特徵。即,亦具有粒度分佈陡峭之特徵。本發明之銅粒子之粒度分佈之程度可以藉由雷射繞射散射式粒度分佈測定法測得之累積體積90容量%下之體積累積粒徑D90 、與累積體積50容量%下之體積累積粒徑D50 之比D90 /D50 而表示。於本發明之銅粒子中,D90 /D50 之值為1.3~2.5,較佳為1.35~2.4,進而較佳為1.4~2.0。藉由使D90 /D50 之值為該範圍內,可起到當製成膏膜時,能夠形成高填充性且緻密之膜,進而亦容易控制膜厚之有利效果。The copper particles of the present invention also have the characteristics of uniform particle size. That is, it also has a characteristic that the particle size distribution is steep. The degree of particle size distribution of the copper particles of the present invention can be obtained by a volumetric cumulative particle diameter D 90 at a cumulative volume of 90% by volume and a volume accumulation at a cumulative volume of 50% by volume as measured by a laser diffraction scattering particle size distribution measurement method. The ratio of the particle diameter D 50 is represented by D 90 /D 50 . In the copper particles of the present invention, the value of D 90 /D 50 is from 1.3 to 2.5, preferably from 1.35 to 2.4, and further preferably from 1.4 to 2.0. By setting the value of D 90 /D 50 within this range, it is possible to form a highly filled and dense film when the paste film is formed, and it is also advantageous in that the film thickness can be easily controlled.

上述D90 及D50 並非銅粒子之一次粒子之粒徑本身,而是一次粒子凝聚而成之二次粒子之凝聚徑,本發明之銅粒子亦具有一次粒子之凝聚程度較低之特徵。即,亦具有分散性良好之特徵。為抑制一次粒子之凝聚,例如於銅之濕式還原法中,迄今為止通常進行之手法是使溶液中存在分散劑。然而,分散劑通常為含有碳之有機化合物,故由於使用分散劑而於所得銅粒子中混入碳。相對於此,本發明之銅粒子儘管如上所述碳含量經減少,但分散性仍較高。即,本發明之銅粒子同時滿足低碳量與高分散性之迄今為止不相容之二種特性。The above-mentioned D 90 and D 50 are not the particle diameter of the primary particles of the copper particles, but the aggregation diameter of the secondary particles in which the primary particles are agglomerated, and the copper particles of the present invention are also characterized by a low degree of aggregation of the primary particles. That is, it also has the characteristics of good dispersibility. In order to suppress aggregation of primary particles, for example, in the wet reduction method of copper, a conventional method has hitherto been to obtain a dispersant in a solution. However, the dispersant is usually an organic compound containing carbon, so carbon is mixed into the obtained copper particles by using a dispersant. On the other hand, although the copper particles of the present invention have a reduced carbon content as described above, the dispersibility is still high. That is, the copper particles of the present invention simultaneously satisfy two characteristics which have hitherto been incompatible with low carbon content and high dispersibility.

一次粒子之凝聚程度可以藉由雷射繞射散射式粒度分佈測定法測得之累積體積50容量%下之體積累積粒徑D50 、與藉由圖像分析而測定之一次粒子之平均粒徑D之比D50 /D而表示。該值越接近1,一次粒子之凝聚程度越小。然而,通常粒子之凝聚係粒徑越小,其程度越嚴重,反之隨著粒徑變大,凝聚變得難以產生。例如於一次粒子之平均粒徑D為數百μm之情形時,D50 /D之值即便不實施特別處理等亦可接近1,但於一次粒子之平均粒徑D為次微米級之情形時,不易使D50 /D之值接近1。即,表示凝聚程度之D50 /D之值成為一次粒子之平均粒徑D之函數,即便僅表示D50 /D之值,技術含義亦較淺。因此,本發明者等人就與一次粒子之平均粒徑D之關係,對D50 /D之值進行了各種研究,結果發現,使用將D50 /D設為y、一次粒子之平均粒徑D設為x時,y與x滿足下式(1)之銅粒子就導電膏之性能提高方面而言有利。The degree of aggregation of primary particles can be obtained by a laser diffraction scattering particle size distribution measurement, and the volume cumulative particle diameter D 50 at a cumulative volume of 50% by volume, and the average particle diameter of primary particles measured by image analysis. The ratio D is expressed as D 50 /D. The closer the value is to 1, the smaller the degree of aggregation of the primary particles. However, generally, the smaller the particle size of the agglomerated particles, the more severe the degree, and conversely, as the particle size becomes larger, agglomeration becomes less likely to occur. For example, when the average particle diameter D of the primary particles is several hundred μm, the value of D 50 /D may be close to 1 even if no special treatment is performed, but when the average particle diameter D of the primary particles is on the order of submicron. It is not easy to make the value of D 50 /D close to 1. That is, the value of D 50 /D indicating the degree of aggregation is a function of the average particle diameter D of the primary particles, and even if only the value of D 50 /D is expressed, the technical meaning is shallow. Therefore, the inventors of the present invention conducted various studies on the relationship between the average particle diameter D of the primary particles and the value of D 50 /D, and found that D 50 /D was set to y, and the average particle diameter of the primary particles was used. When D is set to x, copper particles satisfying y and x satisfying the following formula (1) are advantageous in terms of improvement in performance of the conductive paste.

[數1][Number 1]

滿足上述式(1)之關係之銅粒子尤其是形成膏膜時可形成平滑之膜。進而,帶來可形成高填充性且緻密之膜之有利效果,故而較佳。The copper particles satisfying the relationship of the above formula (1) can form a smooth film especially when a paste film is formed. Further, it is preferable because it has an advantageous effect of forming a film having a high filling property and being dense.

上述藉由圖像分析測得之平均粒徑D可藉由如下方式求出:基於使用掃描式電子顯微鏡(SEM,Scanning Electron Microscope),將銅粒子放大至5000倍~20000倍進行直接觀察所得之SEM像,實測各個銅粒子(測定樣品數為10個以上)之最大橫截長,以測定樣品數進行平均。The average particle diameter D measured by image analysis described above can be obtained by directly observing the copper particles by using a scanning electron microscope (SEM, Scanning Electron Microscope) to a magnification of 5000 times to 20,000 times. The SEM image was used to measure the maximum cross-sectional length of each copper particle (the number of measured samples was 10 or more), and the average number of samples was measured.

本發明之銅粒子除了一次粒子之凝聚程度較低以外,亦具有其為微粒之特徵。如上所述,粒子之凝聚係粒徑越小,其程度越嚴重。相對於此,本發明之銅粒子儘管為微粒,但仍如上所述一次粒子之凝聚較低。即,本發明之銅粒子同時滿足小粒徑與高分散性之迄今為止不相容之二種特性。In addition to the low degree of aggregation of the primary particles, the copper particles of the present invention also have the characteristics of being fine particles. As described above, the smaller the particle size of the agglomerates of the particles, the more serious the degree. On the other hand, although the copper particles of the present invention are fine particles, the aggregation of the primary particles is low as described above. That is, the copper particles of the present invention simultaneously satisfy two characteristics which are incompatible with the small particle diameter and the high dispersibility.

具體而言,本發明之銅粒子之一次粒子之平均粒徑D為0.1~4 μm。藉由使一次粒子之平均粒徑D為該範圍內,可帶來能夠形成膜厚較薄且間距寬較窄之導電膜之有利效果。就使該有利效果更加明顯之觀點而言,本發明之銅粒子之一次粒子之平均粒徑D較佳為0.13~3 μm,進而較佳為0.15~2 μm。Specifically, the average particle diameter D of the primary particles of the copper particles of the present invention is 0.1 to 4 μm. By setting the average particle diameter D of the primary particles within the range, it is possible to form an advantageous effect of forming a conductive film having a thin film thickness and a narrow pitch. The average particle diameter D of the primary particles of the copper particles of the present invention is preferably from 0.13 to 3 μm, more preferably from 0.15 to 2 μm, from the viewpoint of making the advantageous effect more conspicuous.

本發明之銅粒子之形狀並無特別限制,例如可為球狀、多面體狀、紡錘狀、扁平狀、不定形等各種形狀。根據下述銅粒子之較佳之製造方法所得之銅粒子通常形成於表面之一部分具有非曲面部之略球狀(參照下述圖2)。例如形成於表面之一部分具有平面部且於該平面部之端部具有脊線或角部之略球狀。上述形狀與例如以霧化法所製造之表面成為光滑曲面之球狀銅粒子之形狀明顯不同。形成於表面之一部分具有非曲面部之略球狀的銅粒子相比圓球之粒子,填充性較低,且相比薄片狀之粒子,填充性較高,故於由含有該銅粒子之膏形成導電膜之情形時,該導電膜具有表現充分之導電性,且脫氣性優異之優點。脫氣性優異就難以於導電膜上產生龜裂等方面而言有利。The shape of the copper particles of the present invention is not particularly limited, and may be, for example, various shapes such as a spherical shape, a polyhedral shape, a spindle shape, a flat shape, and an amorphous shape. The copper particles obtained by the preferred method for producing copper particles described below are usually formed in a slightly spherical shape having a non-curved portion in one of the surfaces (see FIG. 2 below). For example, one portion formed on the surface has a flat portion and has a slightly spherical shape with ridges or corners at the end portion of the flat portion. The above shape is significantly different from the shape of spherical copper particles having a smooth curved surface, for example, which is produced by an atomization method. The slightly spherical copper particles having a non-curved portion formed on one surface of the surface have lower filling properties than the particles of the sphere, and have higher filling properties than the flaky particles, so the paste containing the copper particles is used. In the case where a conductive film is formed, the conductive film has an advantage of exhibiting sufficient conductivity and excellent degassing property. It is advantageous in that it is difficult to cause cracks on the conductive film, etc., because it is excellent in degassing property.

本發明之低碳銅粒子含有磷。藉由含有磷,可提高低碳銅粒子之耐氧化性。然而,含有大量磷成為銅粒子之導電性下降之原因之一,故本發明之低碳銅粒子中之磷含量必需設為100~1000 ppm,較佳為130~800 ppm,進而較佳為150~500 ppm。再者,ppm係指重量基準之百萬分率。又,本發明之低碳銅粒子較佳為實質上不含有銅及磷以外之元素。所謂實質上不含有,旨在排除有意添加該元素,例如旨在容許於製品之製造過程中不可避免地混入之微量元素、或無法藉由純化去除乾淨而不可避免地殘留之微量元素之存在。The low carbon copper particles of the present invention contain phosphorus. The oxidation resistance of the low carbon copper particles can be improved by containing phosphorus. However, since a large amount of phosphorus is one of the causes of a decrease in conductivity of the copper particles, the phosphorus content in the low carbon copper particles of the present invention must be 100 to 1000 ppm, preferably 130 to 800 ppm, and more preferably 150. ~500 ppm. Further, ppm means the parts per million by weight. Further, the low carbon copper particles of the present invention preferably contain substantially no elements other than copper and phosphorus. The term "substantially not contained" is intended to exclude the intentional addition of the element, for example, to allow trace elements which are inevitably mixed in the manufacturing process of the product, or the presence of trace elements which are inevitably left to be removed by purification.

為使本發明之低碳銅粒子中含有磷,例如只要於下述製造方法中添加含磷之化合物即可。又,本發明之低碳銅粒子中之磷含量例如可藉由ICP(Inductively Coupled Plasma,感應耦合電漿)測定而求出。於本發明之低碳銅粒子中,磷較佳為以氧化物之狀態、例如以H3 PO4 、Na4 P2 O7 之狀態存在。磷是否以氧化物之狀態存在可藉由X射線電子分光法(XPS,X-ray Photoelectron Spectroscopy)或X射線繞射裝置(XRD,X-Ray Diffraction)而確認。又,較佳為磷以未與銅化學鍵結之狀態存在。於磷以與銅化學鍵結之狀態含於銅粒子中之情形時,有時對導電性產生不利作用。磷是否與銅化學鍵結可藉由XPS或XRD確認。In order to contain phosphorus in the low carbon copper particles of the present invention, for example, a phosphorus-containing compound may be added to the following production method. Further, the phosphorus content in the low carbon copper particles of the present invention can be determined, for example, by measurement by ICP (Inductively Coupled Plasma). In the low carbon copper particles of the present invention, phosphorus is preferably present in the state of an oxide, for example, in the state of H 3 PO 4 or Na 4 P 2 O 7 . Whether or not phosphorus is present in the form of an oxide can be confirmed by X-ray photoelectron spectroscopy (XPS, X-ray photoelectron spectroscopy) or X-ray Diffraction (XRD). Further, it is preferred that phosphorus is present in a state in which it is not chemically bonded to copper. When phosphorus is contained in the copper particles in a state of being chemically bonded to copper, it sometimes has an adverse effect on conductivity. Whether or not phosphorus is chemically bonded to copper can be confirmed by XPS or XRD.

繼而,對本發明之扁平銅粒子之較佳之製造方法進行說明。於本製造方法中,於含有銅化合物之水性液中添加還原劑而進行銅之還原。於該方法中,自其開始至結束為止,於含碳化學物種之不存在下(其中乙酸銅或甲酸銅等含碳銅化合物除外)進行所有步驟。作為含碳化學物種,可列舉各種有機化合物(例如烴、醇、醛、羧酸、酯、醚、酮、有機矽烷、胺基酸等)、含有碳之離子物種(例如羧酸根離子或碳酸根離子等)、碳材料(例如黑鉛或石墨等)。Next, a preferred method of producing the flat copper particles of the present invention will be described. In the present production method, a reducing agent is added to an aqueous liquid containing a copper compound to carry out reduction of copper. In this method, all steps are carried out from the beginning to the end thereof in the absence of a carbonaceous chemical species (except for copper-containing copper compounds such as copper acetate or copper formate). Examples of the carbon-containing chemical species include various organic compounds (for example, hydrocarbons, alcohols, aldehydes, carboxylic acids, esters, ethers, ketones, organic decanes, amino acids, etc.), and carbon-containing ionic species (for example, carboxylate ions or carbonates). Ions, etc., carbon materials (such as black lead or graphite).

於本製造方法中,首先製備含有二價銅化合物之水性液(以下亦稱作「銅含有液」)。作為銅化合物,例如可使用硫酸銅、硝酸銅或該等之水合物等水溶性銅化合物。又,亦可使用乙酸銅作為銅化合物。乙酸銅為含碳化合物,但源自乙酸銅之碳為微量,故源自乙酸銅之碳不會大量含於作為目標之銅粒子中。該等銅化合物中,硫酸銅五水合物及硝酸銅之水溶性較高,可提高於水溶液中之銅濃度,又,容易獲得粒度之均一性較高之銅粒子,故而可較佳地使用。In the present production method, an aqueous liquid containing a divalent copper compound (hereinafter also referred to as "copper-containing liquid") is first prepared. As the copper compound, for example, a water-soluble copper compound such as copper sulfate, copper nitrate or a hydrate thereof can be used. Further, copper acetate can also be used as the copper compound. Copper acetate is a carbon-containing compound, but the carbon derived from copper acetate is a trace amount, so that carbon derived from copper acetate is not contained in a large amount in the target copper particles. Among these copper compounds, copper sulfate pentahydrate and copper nitrate have high water solubility, can increase the concentration of copper in an aqueous solution, and can easily obtain copper particles having a high uniformity of particle size, and thus can be preferably used.

銅含有液相對於水100重量份,較佳為含有銅化合物2.0重量份~4.0重量份、進而較佳為3.0重量份~3.8重量份。藉由以該範圍之比例含有銅化合物,可實現生產性優異之合成,故而較佳。The copper-containing liquid phase is preferably contained in an amount of 2.0 parts by weight to 4.0 parts by weight, more preferably 3.0 parts by weight to 3.8 parts by weight, based on 100 parts by weight of the water. It is preferable to contain a copper compound in a ratio of this range, since synthesis with excellent productivity can be achieved.

銅含有液可藉由在水中溶解或分散二價銅化合物而製備。作為銅化合物之溶解方法,例如可列舉使水處於攪拌之狀態,向其中添加銅化合物進行攪拌之方法。關於銅含有液之製備時之液溫,就獲得均勻粒徑之銅粒子之觀點而言,較佳為40℃~90℃、進而較佳為50℃~80℃。The copper-containing liquid can be prepared by dissolving or dispersing a divalent copper compound in water. As a method of dissolving the copper compound, for example, a method in which water is stirred and a copper compound is added thereto and stirred is mentioned. The liquid temperature at the time of preparation of the copper-containing liquid is preferably from 40 ° C to 90 ° C, and more preferably from 50 ° C to 80 ° C from the viewpoint of obtaining copper particles having a uniform particle diameter.

於以上述方式獲得之銅含有液中添加鹼性化合物而生成氧化銅(CuO)。作為用於此之鹼性化合物,例如可列舉氫氧化鈉或氫氧化鉀等鹼金屬之氫氧化物及氨。該等鹼性化合物可單獨使用或組合2種以上使用。生成之氧化銅以微小固體狀粒子之狀態懸浮於溶液中。A basic compound is added to the copper-containing liquid obtained in the above manner to form copper oxide (CuO). Examples of the basic compound used herein include hydroxides of alkali metals such as sodium hydroxide or potassium hydroxide, and ammonia. These basic compounds may be used singly or in combination of two or more. The generated copper oxide is suspended in the solution in the form of fine solid particles.

作為向銅含有液中添加鹼性化合物之方法,例如可列舉使銅含有液處於攪拌狀態,向其中添加鹼性化合物之水溶液進行攪拌之方法。此時之液溫可較佳為設為40℃~90℃、進而較佳為設為50℃~80℃。若液溫為該範圍內,則容易獲得一次粒子之凝聚較少之粒徑之均一性較高之銅粒子,故而較佳。於使用2種以上之組合作為鹼性化合物之情形時,可同時添加該等,或者亦可依序添加該等。As a method of adding a basic compound to a copper-containing liquid, for example, a method in which a copper-containing liquid is stirred and an aqueous solution of a basic compound is added thereto is stirred. The liquid temperature at this time is preferably from 40 ° C to 90 ° C, and more preferably from 50 ° C to 80 ° C. When the liquid temperature is within this range, copper particles having a high uniformity of particle diameters in which primary particles are less aggregated are easily obtained, which is preferable. When two or more combinations are used as the basic compound, these may be added at the same time, or may be added in order.

鹼性化合物於銅含有液中之添加量設為相對於銅1莫耳較佳為成為0.7~2.0莫耳、進而較佳為成為0.75~1.8莫耳之量。藉由使鹼性化合物之添加量處於該範圍內,可容易獲得粒徑之均一性較高之銅粒子,故而較佳。The amount of the basic compound added to the copper-containing liquid is preferably 0.7 to 2.0 mol, more preferably 0.75 to 1.8 mol, based on the copper 1 molar. When the amount of the basic compound added is within this range, copper particles having a high uniformity in particle diameter can be easily obtained, which is preferable.

較佳為藉由向銅含有液中添加鹼性化合物而生成氧化銅後仍繼續攪拌溶液進行熟成。熟成較佳為進行10分鐘~60分鐘、尤佳為進行20分鐘~40分鐘。藉由熟成可充分地生成氧化銅,藉此容易獲得粒度之均一性較高之銅粒子,故而較佳。It is preferred to continue the stirring of the solution by adding a basic compound to the copper-containing liquid to form a copper oxide. The ripening is preferably carried out for 10 minutes to 60 minutes, and more preferably for 20 minutes to 40 minutes. It is preferable to form copper oxide sufficiently by aging to easily obtain copper particles having high uniformity in particle size.

以該方式生成氧化銅後,繼而進行第1還原步驟。於本還原步驟中,一面攪拌溶液一面添加還原劑,藉此將溶液中所含之氧化銅還原成氧化亞銅(Cu2 O)。因此,本還原步驟中所使用之還原劑係具有將氧化銅還原成氧化亞銅之作用者。作為該還原劑,例如可使用肼。After the copper oxide is formed in this manner, the first reduction step is carried out. In the present reduction step, a reducing agent is added while stirring the solution, thereby reducing the copper oxide contained in the solution to cuprous oxide (Cu 2 O). Therefore, the reducing agent used in the present reduction step has a function of reducing copper oxide to cuprous oxide. As the reducing agent, for example, hydrazine can be used.

於本還原步驟中,相對於溶液中所含之銅1莫耳,較佳為添加還原劑0.1莫耳~3莫耳,進而較佳為添加0.3莫耳~1.5莫耳。藉由使還原劑之添加量為該範圍內,可充分進行氧化銅向氧化亞銅之還原反應,其結果,作為目標之銅粒子難以發生其一次粒子之凝聚,故而較佳。In the present reduction step, it is preferable to add 0.1 mol to 3 mol of the reducing agent with respect to the copper 1 mol contained in the solution, and it is preferable to add 0.3 mol to 1.5 mol. When the amount of the reducing agent added is within this range, the reduction reaction of copper oxide to cuprous oxide can be sufficiently performed. As a result, it is preferable that the target copper particles are less likely to agglomerate the primary particles.

較佳為藉由本還原步驟將氧化銅還原成氧化亞銅後仍繼續攪拌溶液進行熟成。熟成較佳為進行10分鐘~60分鐘、尤佳為進行20分鐘~40分鐘。藉由熟成可充分生成氧化亞銅,使作為目標之銅粒子難以發生其一次粒子之凝聚,故而較佳。Preferably, the copper oxide is reduced to form cuprous oxide by the reduction step, and the solution is further stirred for ripening. The ripening is preferably carried out for 10 minutes to 60 minutes, and more preferably for 20 minutes to 40 minutes. It is preferred that the copper particles are sufficiently formed by aging to make the target copper particles less likely to agglomerate the primary particles.

第1還原步驟結束後,繼而進行第2還原步驟。於本還原步驟中,藉由一面攪拌溶液一面添加還原劑,而將溶液中所含之氧化亞銅還原成銅而生成銅粒子。因此,本還原步驟中所使用之還原劑係具有將氧化亞銅還原成銅之作用者。作為該還原劑,例如可使用肼。After the completion of the first reduction step, the second reduction step is followed. In the present reduction step, copper oxide particles are formed by reducing the cuprous oxide contained in the solution to copper by adding a reducing agent while stirring the solution. Therefore, the reducing agent used in the present reduction step has a function of reducing cuprous oxide to copper. As the reducing agent, for example, hydrazine can be used.

於第2還原步驟中,相對於溶液中所含之銅1莫耳,較佳為添加還原劑0.3莫耳~3莫耳,進而較佳為添加0.31莫耳~2莫耳。藉由將還原劑之使用量設定為該範圍內,可順利地獲得作為目標之銅粒子。In the second reduction step, it is preferable to add 0.3 mol to 3 mol of the reducing agent to the copper 1 mol contained in the solution, and it is preferable to add 0.31 mol to 2 mol. By setting the amount of the reducing agent to be within this range, the target copper particles can be smoothly obtained.

本發明者等人研究之結果表明,於第2還原步驟中之銅粒子之生成時使反應系統中含有大量無助於還原反應之水溶性鹽就順利獲得粒徑統一之銅粒子之方面而言有利。為統一銅粒子之粒徑,重要的是儘量抑制生成銅粒子時之溶液之pH值變動,藉由使溶液中含有大量鹽,可使該鹽作為緩衝劑而發揮作用,從而抑制pH值之變動。就該觀點而言,較佳為將生成銅粒子時溶液中所存在之鹽之濃度設定為11~15 mol/L、尤佳為設定為11.5~14 mol/L。As a result of research by the inventors of the present invention, it has been found that the formation of copper particles in the second reduction step causes the reaction system to contain a large amount of water-soluble salt which does not contribute to the reduction reaction, and the copper particles having a uniform particle diameter are smoothly obtained. advantageous. In order to unify the particle size of the copper particles, it is important to suppress the pH value of the solution when the copper particles are formed as much as possible, and by allowing the solution to contain a large amount of salt, the salt acts as a buffer to suppress the pH change. . From this point of view, it is preferred to set the concentration of the salt present in the solution to 11 to 15 mol/L, and more preferably to 11.5 to 14 mol/L, when the copper particles are formed.

作為無助於還原反應之鹽,於水中進行電離而產生之陽離子及陰離子均可列舉為無助於自氧化亞銅向銅粒子之生成者。作為上述陽離子,可列舉鈉離子、鉀離子、質子等。作為陰離子,可列舉硫酸根離子、硝酸根離子、氯化物離子、銨離子、氫氧化物離子等。作為包含該等陽離子與陰離子之組合之鹽之具體例,可舉出NaNO3 、NaCl、Na2 SO4 等。As the salt which does not contribute to the reduction reaction, the cation and anion which are generated by ionization in water can be exemplified as those which do not contribute to the formation of copper oxide from copper oxide. Examples of the cation include sodium ions, potassium ions, protons, and the like. Examples of the anion include a sulfate ion, a nitrate ion, a chloride ion, an ammonium ion, and a hydroxide ion. Specific examples of the salt containing the combination of the cation and the anion include NaNO 3 , NaCl, Na 2 SO 4 and the like.

上述水溶性鹽較佳為於第2還原步驟之開始前存在於溶液中。為達成該目的,(A)可於第1還原步驟之後,不將氧化亞銅自溶液分離而供給至第2還原步驟,且於第1還原步驟之後、第2還原步驟之前,將該水溶性鹽以其濃度成為11~15 mol/L之方式添加至溶液中。作為另一方法,(B)於第1還原步驟之後,將氧化亞銅自溶液分離進行洗淨等操作後,製備含有經分離之氧化亞銅且含有上述水溶性鹽11~15 mol/L之漿料,將所製備之漿料供給至第2還原步驟。The water-soluble salt is preferably present in the solution before the start of the second reduction step. In order to achieve the object, (A) may be supplied to the second reduction step without separating the cuprous oxide from the solution after the first reduction step, and the water-soluble portion may be after the first reduction step or before the second reduction step. The salt is added to the solution in such a manner that its concentration becomes 11 to 15 mol/L. As another method, (B) after the first reduction step, the cuprous oxide is separated from the solution and washed, and the like, the prepared cuprous oxide is contained and the water-soluble salt is contained in an amount of 11 to 15 mol/L. The slurry is supplied to the second reduction step.

根據為進行本製造方法所添加之各種化合物之添加量,存在於第1還原步驟之結束時,溶液中之上述水溶性鹽之濃度已滿足上述範圍之情形。於上述情形時,無需使用追加之水溶性鹽,可繼續進行第2還原步驟。The amount of the various compounds added for carrying out the production method is such that the concentration of the water-soluble salt in the solution satisfies the above range at the end of the first reduction step. In the above case, the second reduction step can be continued without using an additional water-soluble salt.

較佳為藉由第2還原步驟將氧化亞銅還原成銅後仍繼續攪拌溶液進行熟成。熟成較佳為進行20分鐘~120分鐘、尤佳為進行40分鐘~90分鐘。藉由熟成可充分進行還原,使作為目標之銅粒子難以發生其一次粒子之凝聚,故而較佳。Preferably, the cuprous oxide is reduced to copper by the second reduction step, and the solution is further stirred to be aged. The ripening is preferably carried out for 20 minutes to 120 minutes, and more preferably for 40 minutes to 90 minutes. It is preferred that the target copper particles are less likely to be agglomerated by primary particles by aging.

於以上製造方法中,在任一步驟中添加磷化合物,使作為目標之低碳銅粒子含有磷。藉由使低碳銅粒子含有磷,可提高該粒子之耐氧化性。又,藉由在步驟中添加磷化合物,可抑制一次粒子之凝聚,獲得分散性良好之銅粒子。In the above production method, a phosphorus compound is added in any step so that the target low carbon copper particles contain phosphorus. By making the low carbon copper particles contain phosphorus, the oxidation resistance of the particles can be improved. Further, by adding a phosphorus compound in the step, aggregation of primary particles can be suppressed, and copper particles having good dispersibility can be obtained.

作為磷化合物之添加時間,例如可列舉以下任意1個時間或2個以上時間:(i)於銅含有液中添加鹼性化合物之前、(ii)於銅含有液中添加鹼性化合物之同時或其後且為第1還原步驟之前、(iii)於第1還原步驟中添加還原劑之同時或其後且為第2還原步驟之前、(iv)於第2還原步驟中添加還原劑之同時或其後。尤其是若於(i)之時間、或(i)與(iii)之時間之兩者添加磷化合物,則對一次粒子之凝聚防止尤為有效,故而較佳。The addition time of the phosphorus compound may be, for example, any one of the following times or two or more times: (i) before adding a basic compound to the copper-containing liquid, (ii) adding a basic compound to the copper-containing liquid, or Thereafter, before the first reduction step, (iii) while adding the reducing agent in the first reduction step or after and before the second reduction step, (iv) adding the reducing agent to the second reduction step, or Thereafter. In particular, it is preferable to add a phosphorus compound to the time of (i) or both of (i) and (iii) for the prevention of aggregation of primary particles.

作為磷化合物,較佳為使用可於水之存在下生成正磷酸根離子、焦磷酸根離子、偏磷酸根離子等磷酸根離子之化合物。作為上述磷化合物,例如可列舉:正磷酸;焦磷酸及三聚磷酸等聚磷酸;三偏磷酸等偏磷酸;正磷酸鈉及正磷酸鉀等正磷酸鹽;焦磷酸鈉及焦磷酸鉀等聚磷酸鹽;三偏磷酸鈉及三偏磷酸鉀等偏磷酸鹽等。該等磷化合物中,若使用焦磷酸鹽、三聚磷酸鹽、正磷酸鹽,則對一次粒子之凝聚防止更加有效。As the phosphorus compound, a compound which can form a phosphate ion such as a orthophosphate ion, a pyrophosphate ion or a metaphosphate ion in the presence of water is preferably used. Examples of the phosphorus compound include orthophosphoric acid; polyphosphoric acid such as pyrophosphoric acid and tripolyphosphoric acid; metaphosphoric acid such as trimetaphosphoric acid; orthophosphate such as sodium orthophosphate and potassium orthophosphate; and sodium pyrophosphate and potassium pyrophosphate. Phosphate; metaphosphate such as sodium trimetaphosphate and potassium trimetaphosphate. Among these phosphorus compounds, if pyrophosphate, tripolyphosphate or orthophosphate is used, aggregation prevention of primary particles is more effective.

本製造方法中所添加之磷化合物之合計量以換算成P(磷)之量表示,相對於銅1莫耳,較佳為0.1毫莫耳~100毫莫耳、進而較佳為0.2毫莫耳~50毫莫耳。若磷化合物之添加量為該範圍內,則可無損作為目標之低碳銅粒子之導電性而有效地防止一次粒子之凝聚,故而較佳。The total amount of the phosphorus compound added in the production method is expressed by the amount converted into P (phosphorus), and is preferably 0.1 millimolar to 100 millimolar, and more preferably 0.2 millimeter, relative to the copper 1 molar. Ears ~50 millimoles. When the amount of the phosphorus compound added is within this range, the conductivity of the target low carbon copper particles can be prevented, and aggregation of the primary particles can be effectively prevented, which is preferable.

藉由以上方法而製造之銅粒子自步驟之開始至結束為止,於含碳化學物種(其中含碳銅化合物除外)之不存在下進行反應,故原理上完全不含有碳,或者即便含有碳,其量亦降低至極低。並且,粒徑統一,且一次粒子之凝聚得到抑制。即便銅粒子含有碳,該碳亦為不可避免地混入銅粒子中者。於本製造方法中,不進行有意使銅粒子中含有碳之操作。The copper particles produced by the above method are reacted in the absence of the carbon-containing chemical species (excluding the carbon-containing copper compound) from the beginning to the end of the step, so that in principle, no carbon is contained at all, or even if carbon is contained, The amount is also reduced to a very low level. Further, the particle diameter is uniform, and aggregation of primary particles is suppressed. Even if the copper particles contain carbon, the carbon is inevitably mixed into the copper particles. In the present production method, the operation of intentionally causing carbon in the copper particles is not performed.

藉由以上方法可獲得作為目標之低碳銅粒子。以該方式獲得之低碳銅粒子例如可較佳地用作導電膏之原料。該導電膏係含有包含本發明之低碳銅粒子之金屬粒子、有機媒劑、及玻璃料者。該有機媒劑包含樹脂成分與溶劑。作為樹脂成分,例如可列舉丙烯酸系樹脂、環氧樹脂、乙基纖維素、羧基乙基纖維素等。作為溶劑,可列舉松油醇及二氫松油醇等萜烯系溶劑、或乙基卡必醇及丁基卡必醇等醚系溶劑。作為玻璃料,可列舉硼矽玻璃、鋇硼矽玻璃、鋅硼矽玻璃等。導電膏中之金屬粉之比例較佳為設為36~97.5重量%。玻璃料之比例較佳為設為1.5~14重量%。有機媒劑之比例較佳為設為1~50重量%。作為該導電膏中之金屬粒子,可僅使用本發明之低碳銅粒子,或者亦可組合該低碳銅粒子與扁平等其他形狀之銅粒子而使用。藉由組合本發明之低碳銅粒子與其他形狀之銅粒子而使用,容易精密地進行膏之黏度調整。The target low carbon copper particles can be obtained by the above method. The low carbon copper particles obtained in this manner are preferably used, for example, as a raw material for a conductive paste. The conductive paste contains metal particles, an organic vehicle, and a glass frit containing the low carbon copper particles of the present invention. The organic vehicle contains a resin component and a solvent. Examples of the resin component include an acrylic resin, an epoxy resin, ethyl cellulose, and carboxyethyl cellulose. Examples of the solvent include terpene-based solvents such as terpineol and dihydroterpineol, and ether solvents such as ethyl carbitol and butyl carbitol. Examples of the glass frit include borosilicate glass, bismuth boron bismuth glass, and zinc borosilicate glass. The proportion of the metal powder in the conductive paste is preferably set to 36 to 97.5 wt%. The proportion of the glass frit is preferably set to 1.5 to 14% by weight. The ratio of the organic vehicle is preferably from 1 to 50% by weight. As the metal particles in the conductive paste, only the low carbon copper particles of the present invention may be used, or the low carbon copper particles and other shapes of copper particles such as flat sheets may be used in combination. By combining the low carbon copper particles of the present invention with copper particles of other shapes, it is easy to precisely adjust the viscosity of the paste.

以該方式獲得之導電膏例如可較佳地用於印刷配線板之電路形成、陶瓷電容器之外部電極等之電氣導通確保、EMI(Electro Magnetic Interference,電磁干擾)對策。The conductive paste obtained in this manner can be preferably used for circuit formation of a printed wiring board, electrical conduction securing of an external electrode of a ceramic capacitor, and the like, and EMI (Electro Magnetic Interference) countermeasure.

[實施例][Examples]

以下,藉由實施例對本發明進行更加詳細之說明。然而,本發明之範圍並不受該實施例限制。只要無特別規定,則「%」係指「重量%」。Hereinafter, the present invention will be described in more detail by way of examples. However, the scope of the invention is not limited by the embodiment. As long as there is no special provision, "%" means "% by weight".

[實施例1][Example 1]

(1) 含銅水溶液之製備(1) Preparation of copper-containing aqueous solution

於65℃之純水6.5 L中,以銅之濃度成為表1所示之值之方式添加硫酸銅五水合物,進行攪拌。向其中進而添加焦磷酸鈉,於該狀態下持續攪拌30分鐘,獲得含銅水溶液。焦磷酸鈉之添加量設為相對於銅1莫耳成為表1所示之值之量。Copper sulfate pentahydrate was added to 6.5 L of pure water at 65 ° C so that the copper concentration became the value shown in Table 1, and the mixture was stirred. Further, sodium pyrophosphate was further added thereto, and stirring was continued for 30 minutes in this state to obtain a copper-containing aqueous solution. The amount of sodium pyrophosphate added was set to the amount shown in Table 1 with respect to copper 1 molar.

(2) 氧化銅之生成(2) Formation of copper oxide

於攪拌該水溶液之狀態下,向該水溶液中同時添加表1所示之2種鹼性化合物而於溶液中生成氧化銅。然後繼續攪拌30分鐘。鹼性化合物之添加量設為相對於銅1莫耳成為表1所示之值之量。Two kinds of basic compounds shown in Table 1 were simultaneously added to the aqueous solution while stirring the aqueous solution to form copper oxide in the solution. Stirring was then continued for 30 minutes. The amount of the basic compound added was set to the amount shown in Table 1 with respect to the copper 1 molar.

(3) 氧化銅向氧化亞銅之還原(3) Reduction of copper oxide to cuprous oxide

繼而,添加肼及氨水進行第1還原反應,將氧化銅還原成氧化亞銅。然後繼續攪拌30分鐘。肼及氨水之添加量設為相對於銅1莫耳成為表1所示之值之量。此時溶液中之水溶性鹽(無助於還原反應之鹽)之濃度如表1所示。Then, hydrazine and ammonia water are added to carry out the first reduction reaction, and the copper oxide is reduced to cuprous oxide. Stirring was then continued for 30 minutes. The amount of hydrazine and ammonia added was set to the amount shown in Table 1 with respect to copper 1 molar. The concentration of the water-soluble salt (salt which does not contribute to the reduction reaction) in the solution at this time is shown in Table 1.

(4) 氧化亞銅向銅粒子之還原(4) Reduction of cuprous oxide to copper particles

繼而,於溶液中添加焦磷酸鈉,進而添加肼,進行第2還原反應,將氧化亞銅還原成銅。繼續攪拌1小時,結束反應。焦磷酸鈉之添加量與之前添加之焦磷酸鈉之添加量之合計設為相對於銅1莫耳成為表1所示之值之量。肼之添加量設為相對於銅1莫耳成為表1所示之值之量。反應結束後,使用布氏漏斗對所得之漿料進行過濾,繼而以純水洗淨,進而加以乾燥,獲得作為目標之銅粒子。以SEM觀察該銅粒子,結果如圖2所示,確認該該銅粒子為表面之一部分具有非曲面部之略球狀者。Then, sodium pyrophosphate is added to the solution, and further, hydrazine is added to carry out the second reduction reaction, and the cuprous oxide is reduced to copper. Stirring was continued for 1 hour and the reaction was terminated. The total amount of sodium pyrophosphate added and the amount of sodium pyrophosphate added before was set to be the amount shown in Table 1 with respect to copper 1 molar. The amount of ruthenium added was set to the amount shown in Table 1 with respect to copper 1 molar. After completion of the reaction, the obtained slurry was filtered using a Buchner funnel, followed by washing with pure water, followed by drying to obtain a target copper particle. The copper particles were observed by SEM. As a result, as shown in Fig. 2, it was confirmed that the copper particles had a slightly spherical shape in which a part of the surface had a non-curved surface portion.

[實施例2][Embodiment 2]

(2)之步驟之前進行與實施例1相同之操作。其中,使用硝酸銅替代硫酸銅作為銅化合物。繼而,添加肼及氨水進行第1還原反應,將氧化銅還原成氧化亞銅。然後繼續攪拌30分鐘。肼及氨水之添加量設為相對於銅1莫耳成為表1所示之值之量。繼而,使用布氏漏斗,過濾分離該生成之氧化亞銅,以純水洗淨。使用純水,將洗淨後之氧化亞銅再漿料化(氧化亞銅之比例為70%),進而添加表1所示之水溶性鹽以成為同表所示之濃度。The same operation as in Embodiment 1 was carried out before the step of (2). Among them, copper nitrate was used instead of copper sulfate as a copper compound. Then, hydrazine and ammonia water are added to carry out the first reduction reaction, and the copper oxide is reduced to cuprous oxide. Stirring was then continued for 30 minutes. The amount of hydrazine and ammonia added was set to the amount shown in Table 1 with respect to copper 1 molar. Then, the formed cuprous oxide was separated by filtration using a Buchner funnel, and washed with pure water. The washed cuprous oxide was reslurryed with pure water (the proportion of cuprous oxide was 70%), and the water-soluble salt shown in Table 1 was further added to have the concentration shown in the same table.

繼而,於溶液中添加焦磷酸鈉,進而添加肼,進行第2還原反應,將氧化亞銅還原成銅。繼續攪拌1小時,結束反應。焦磷酸鈉之添加量與之前添加之焦磷酸鈉之添加量之合計設為相對於銅1莫耳成為表1所示之值之量。肼之添加量設為相對於銅1莫耳成為表1所示之值之量。反應結束後,使用布氏漏斗,對所得之漿料進行過濾,繼而以純水洗淨,進而加以乾燥,獲得作為目標之銅粒子。以SEM觀察該銅粒子,結果確認該銅粒子為於表面之一部分具有非曲面部之略球狀者。Then, sodium pyrophosphate is added to the solution, and further, hydrazine is added to carry out the second reduction reaction, and the cuprous oxide is reduced to copper. Stirring was continued for 1 hour and the reaction was terminated. The total amount of sodium pyrophosphate added and the amount of sodium pyrophosphate added before was set to be the amount shown in Table 1 with respect to copper 1 molar. The amount of ruthenium added was set to the amount shown in Table 1 with respect to copper 1 molar. After completion of the reaction, the obtained slurry was filtered using a Buchner funnel, followed by washing with pure water, followed by drying to obtain a target copper particle. When the copper particles were observed by SEM, it was confirmed that the copper particles had a slightly spherical shape having a non-curved portion on one of the surfaces.

[實施例3][Example 3]

(2)之步驟之前進行與實施例1相同之操作。其中,含銅水溶液係於60℃下製備。繼而,添加肼及氨水進行第1還原反應,將氧化銅還原成氧化亞銅。然後繼續攪拌30分鐘。肼及氨水之添加量設為相對於銅1莫耳成為表1所示之值之量。繼而,不將氧化亞銅與溶液分離而於溶液中添加表1所示之水溶性鹽。水溶性鹽之添加量設為與目前為止溶液中存在之水溶性鹽之合計濃度成為表1所示之值之量。The same operation as in Embodiment 1 was carried out before the step of (2). Among them, an aqueous copper solution was prepared at 60 °C. Then, hydrazine and ammonia water are added to carry out the first reduction reaction, and the copper oxide is reduced to cuprous oxide. Stirring was then continued for 30 minutes. The amount of hydrazine and ammonia added was set to the amount shown in Table 1 with respect to copper 1 molar. Then, the water-soluble salt shown in Table 1 was added to the solution without separating the cuprous oxide from the solution. The amount of the water-soluble salt added is such that the total concentration of the water-soluble salt present in the solution is the value shown in Table 1.

繼而,於溶液中添加肼進行第2還原反應,將氧化亞銅還原成銅。繼續攪拌1小時,結束反應。肼之添加量設為相對於銅1莫耳成為表1所示之值之量。反應結束後,使用布氏漏斗對所得之漿料進行過濾,繼而以純水洗淨,進而加以乾燥,獲得作為目標之銅粒子。以SEM觀察該銅粒子,結果確認該銅粒子為於表面之一部分具有非曲面部之略球狀者。Then, ruthenium is added to the solution to carry out the second reduction reaction, and the cuprous oxide is reduced to copper. Stirring was continued for 1 hour and the reaction was terminated. The amount of ruthenium added was set to the amount shown in Table 1 with respect to copper 1 molar. After completion of the reaction, the obtained slurry was filtered using a Buchner funnel, followed by washing with pure water, followed by drying to obtain a target copper particle. When the copper particles were observed by SEM, it was confirmed that the copper particles had a slightly spherical shape having a non-curved portion on one of the surfaces.

[實施例4至實施例16][Example 4 to Example 16]

除了採用表1所示之條件以外,以與實施例1至3相同之方式獲得銅粒子。以SEM觀察所得之銅粒子,結果確認該銅粒子為於表面之一部分具有非曲面部之略球狀者。Copper particles were obtained in the same manner as in Examples 1 to 3 except that the conditions shown in Table 1 were employed. When the obtained copper particles were observed by SEM, it was confirmed that the copper particles had a slightly spherical shape having a non-curved portion on one of the surfaces.

[實施例17][Example 17]

於本實施例中,使用乙酸銅作為銅化合物。又,採用表1所示之條件。除了該等以外,以與實施例1至3相同之方式獲得銅粒子。以SEM觀察所得之銅粒子,結果確認該銅粒子為於表面之一部分具有非曲面部之略球狀者。In the present embodiment, copper acetate was used as the copper compound. Further, the conditions shown in Table 1 were employed. Copper particles were obtained in the same manner as in Examples 1 to 3 except for the above. When the obtained copper particles were observed by SEM, it was confirmed that the copper particles had a slightly spherical shape having a non-curved portion on one of the surfaces.

[比較例1][Comparative Example 1]

依據專利文獻2所記載之實施例1製造銅粒子。首先,於純水6.5 L中投入硫酸銅6000 g進行攪拌,其後一面將液溫保持於50℃,一面以硫酸銅水溶液之液量成為9 L之方式進而添加水,調整濃度。於該硫酸銅水溶液中,歷時30分鐘添加氨水溶液(濃度25%)2537 ml進行中和,獲得銅鹽化合物漿料。然後,將銅鹽化合物漿料靜置30分鐘進行熟成。至此為止將銅鹽化合物漿料之液溫保持於50℃,熟成後將液溫調整至45℃。Copper particles were produced in accordance with Example 1 described in Patent Document 2. First, 6000 g of copper sulfate was added to 6.5 L of pure water and stirred, and then the liquid temperature was maintained at 50 ° C, and water was further added so that the amount of the copper sulfate aqueous solution became 9 L, and the concentration was adjusted. To the copper sulfate aqueous solution, 2537 ml of an aqueous ammonia solution (concentration: 25%) was added for 30 minutes to carry out neutralization to obtain a copper salt compound slurry. Then, the copper salt compound slurry was allowed to stand for 30 minutes for ripening. The liquid temperature of the copper salt compound slurry was kept at 50 ° C until now, and the liquid temperature was adjusted to 45 ° C after the aging.

繼而,以銅鹽化合物漿料之銅濃度成為2.0 mol/L之方式添加水,調整液量。將該銅鹽化合物漿料保持於pH值6.3、液溫50℃之條件,歷時30分鐘向其中連續添加肼一水合物450 g與氨水溶液(濃度25%)591 ml,製成氧化亞銅漿料(第1還原處理)。然後,為完全進行還原反應,進而持續攪拌30分鐘。Then, water was added so that the copper concentration of the copper salt compound slurry became 2.0 mol/L, and the amount of liquid was adjusted. The copper salt compound slurry was maintained at a pH of 6.3 and a liquid temperature of 50 ° C, and 459 ml of hydrazine monohydrate and 591 ml of an aqueous ammonia solution (concentration: 25%) were continuously added thereto over 30 minutes to prepare a cuprous oxide slurry. Material (first reduction treatment). Then, the reduction reaction was carried out completely, and stirring was continued for further 30 minutes.

其後,為進行再製漿洗淨,於氧化亞銅漿料中添加純水,將液量調整至18 L後,進行靜置使氧化亞銅粒子沈澱,重複將靜置後之上清液去除14 L之操作直至pH值達到4.7為止。然後,添加溫的純水8 L使總液量成為12 L,使液溫維持45℃,將銅濃度調整至2.0 mol/L,而將其製成洗淨氧化亞銅漿料。此時水溶性鹽之濃度為11.7 mol/L。Thereafter, in order to perform repulping washing, pure water was added to the cuprous oxide slurry, and the amount of the liquid was adjusted to 18 L, and then allowed to stand to precipitate the cuprous oxide particles, and the supernatant was allowed to stand still after repeated standing. The operation of 14 L was removed until the pH reached 4.7. Then, 8 L of warm pure water was added to make the total liquid amount to 12 L, the liquid temperature was maintained at 45 ° C, and the copper concentration was adjusted to 2.0 mol/L, and this was made into a washed cuprous oxide slurry. The concentration of the water-soluble salt at this time was 11.7 mol/L.

於銅濃度調整後之洗淨氧化亞銅漿料中添加次亞磷酸銨3.02 g,攪拌5分鐘。3.02 g of ammonium hypophosphite was added to the washed cuprous oxide slurry after the copper concentration adjustment, and the mixture was stirred for 5 minutes.

以洗淨氧化亞銅漿料之銅濃度成為2.0 mol/L之方式再次添加水,調整液量。於該洗淨氧化亞銅漿料中,歷時30分鐘添加肼一水合物1200 g。繼而,進而攪拌15分鐘,完全進行還原反應而還原析出銅粒子(第2還原處理)。以SEM觀察所得之銅粒子,結果確認該銅粒子為於表面之一部分具有非曲面部之略球狀者。Water was again added so that the copper concentration of the washed cuprous oxide slurry became 2.0 mol/L, and the amount of liquid was adjusted. To the washed cuprous oxide slurry, 1200 g of hydrazine monohydrate was added over 30 minutes. Then, the mixture was further stirred for 15 minutes, and the reduction reaction was completely carried out to reduce the precipitation of copper particles (second reduction treatment). When the obtained copper particles were observed by SEM, it was confirmed that the copper particles had a slightly spherical shape having a non-curved portion on one of the surfaces.

[比較例2][Comparative Example 2]

本比較例係與之前背景技術項中闡述之專利文獻3(US 5801318A)之實施例6對應之例。於以170 rpm攪拌30℃之純水之狀態下添加硫酸銅五水合物使其溶解,製備0.63 mol/L之硫酸銅水溶液。於該溶液中添加焦磷酸鈉十水合物。添加量設為相對於銅1莫耳,焦磷酸鈉成為95.1毫莫耳之量。於該溶液中添加25%氨水,製備銅氨錯離子溶液。氨水之添加量設為相對於銅1莫耳,氨成為5.66莫耳之量。此時水溶性鹽之濃度為1.8 mol/L。於該銅氨錯離子溶液中添加無水肼。肼之添加量設為相對於銅1莫耳,肼成為3.9莫耳之量。然後,使溶液升溫至80℃,將該溫度保持2小時,獲得銅粒子。This comparative example is an example corresponding to Embodiment 6 of Patent Document 3 (US Pat. No. 5,801,318 A), which is hereby incorporated by reference. Copper sulfate pentahydrate was added and dissolved by stirring 30 ° C of pure water at 170 rpm to prepare a 0.63 mol/L copper sulfate aqueous solution. Sodium pyrophosphate decahydrate was added to the solution. The amount added was set to 1 mol with respect to copper 1 mol, and sodium pyrophosphate was 95.1 mmol. A copper ammonia stray solution was prepared by adding 25% ammonia water to the solution. The amount of ammonia added was set to be 1.56 moles with respect to copper 1 mol. The concentration of the water-soluble salt at this time was 1.8 mol/L. An anhydrous hydrazine is added to the copper ammonia counterion solution. The amount of niobium added was set to 1 mol relative to copper, and the amount of niobium was 3.9 m. Then, the solution was heated to 80 ° C, and the temperature was maintained for 2 hours to obtain copper particles.

[比較例3][Comparative Example 3]

本比較例係與之前背景技術項中闡述之專利文獻1(日本專利特開2003-342621號公報)之實施例對應之例。於以170 rpm攪拌60℃之純水之狀態下溶解硫酸銅五水合物及甘胺酸,製備2 mol/L之硫酸銅水溶液。甘胺酸之添加量設為相對於銅1莫耳,甘胺酸成為0.1莫耳之量。一面攪拌該水溶液,一面歷時約5分鐘定量地添加25%氫氧化鈉水溶液,於液溫60℃下攪拌60分鐘,進行熟成直至液色完全變成黑色為止而生成氧化銅。氫氧化鈉之添加量設為相對於銅1莫耳,氫氧化鈉成為1.77莫耳之量。其後放置30分鐘,添加葡萄糖,熟成1小時,藉此將氧化銅還原成氧化亞銅。葡萄糖之添加量設為相對於銅1莫耳,葡萄糖成為0.52莫耳之量。進而,歷時5分鐘定量地添加無水肼而還原氧化亞銅,藉此形成金屬銅而獲得銅粒子。肼之添加量設為相對於銅1莫耳,肼成為1.95莫耳之量。The present comparative example corresponds to an example of the embodiment of the patent document 1 (Japanese Patent Laid-Open No. 2003-342621), which is hereby incorporated by reference. Copper sulfate pentahydrate and glycine acid were dissolved in a state of stirring at 60 ° C in pure water at 170 rpm to prepare a 2 mol/L copper sulfate aqueous solution. The amount of glycine added was set to be 1 mol with respect to copper 1 mol, and glycine acid was 0.1 mol. While stirring the aqueous solution, a 25% aqueous sodium hydroxide solution was quantitatively added over a period of about 5 minutes, and the mixture was stirred at a liquid temperature of 60 ° C for 60 minutes to be matured until the liquid color completely became black to form copper oxide. The amount of sodium hydroxide added was set to 1.77 moles of copper relative to copper. Thereafter, it was allowed to stand for 30 minutes, glucose was added, and it was aged for 1 hour, thereby reducing copper oxide to cuprous oxide. The amount of glucose added was set to be 1 part by mole with respect to copper 1 mol. Further, anhydrous cerium was quantitatively added over 5 minutes to reduce cuprous oxide, thereby forming metallic copper to obtain copper particles. The amount of ruthenium added was set to be 1.95 moles relative to copper 1 mole.

[評價][Evaluation]

利用之前闡述之碳分析來測定實施例及比較例中獲得之銅粒子所含之碳量,以ICP發光分析來測定磷量。又,使用日機裝股份有限公司製之Microtrac HRA測定實施例及比較例中獲得之銅粒子之D90 及D50 。又,利用上述方法測定一次粒子之平均粒徑D。將根據D50 及D之測定結果繪製D50 /D與D之關係而成者示於圖1中。於同圖中亦一併表示依據上述式(1)之曲線。進而,對於實施例及比較例中獲得之銅粒子,利用以下方法製備漿料,測定由該漿料製成之膜之表面粗糙度。將該等結果示於以下表2中。The amount of carbon contained in the copper particles obtained in the examples and the comparative examples was measured by the carbon analysis described above, and the amount of phosphorus was measured by ICP emission analysis. Further, D 90 and D 50 of the copper particles obtained in the examples and the comparative examples were measured using a Microtrac HRA manufactured by Nikkiso Co., Ltd. Further, the average particle diameter D of the primary particles was measured by the above method. Drawn from the measurement results of D and D 50 are formed by the relationship 50 / D and D of the D 1 shown in FIG. Also shown in the same figure is a curve according to the above formula (1). Further, with respect to the copper particles obtained in the examples and the comparative examples, a slurry was prepared by the following method, and the surface roughness of the film made of the slurry was measured. These results are shown in Table 2 below.

[由漿料製成之膜之表面粗糙度之測定][Determination of Surface Roughness of Film Made of Slurry]

將實施例及比較例中獲得之銅粒子與溶劑(松油醇95 g與乙基纖維素5 g之混合物)以1:1之重量比進行混合,形成漿料。使用混合機(Thinky股份有限公司,ARE-250),將該漿料以2000 rpm旋轉45秒,進行預備混練。繼而,以三輥式研磨機(AIMEX股份有限公司,Model RMZ-1)進一步混練漿料。輥之間隙設定為5 μm。使用30 μm之敷料器(YOSHIMITSU SEIKI股份有限公司,Model YR-1),將以該方式獲得之漿料塗佈於玻璃基板上,形成塗膜。將該塗膜於80℃下乾燥5分鐘。使用表面粗糙度形狀測定器(東京精密股份有限公司,Surfcom 130A)測定以該方式獲得之膜之表面粗糙度Ra及Rmax。The copper particles obtained in the examples and the comparative examples and a solvent (a mixture of 95 g of terpineol and 5 g of ethyl cellulose) were mixed at a weight ratio of 1:1 to form a slurry. The slurry was rotated at 2000 rpm for 45 seconds using a mixer (Thinky Co., Ltd., ARE-250) to perform preliminary kneading. Then, the slurry was further kneaded by a three-roll mill (AIMEX Co., Ltd., Model RMZ-1). The gap between the rolls was set to 5 μm. The slurry obtained in this manner was applied onto a glass substrate using a 30 μm applicator (YOSHIMITSU SEIKI Co., Ltd., Model YR-1) to form a coating film. The coating film was dried at 80 ° C for 5 minutes. The surface roughness Ra and Rmax of the film obtained in this manner were measured using a surface roughness shape measuring instrument (Tokyo Precision Co., Ltd., Surfcom 130A).

由表2所示之結果可明確,各實施例中獲得之銅粒子碳含量較低,粒度分佈陡峭,且為微粒。又,可知使用各實施例中獲得之銅粒子所形成之膜表面性良好。相對於此,可知比較例1中獲得之銅粒子雖碳含量較低,但相比實施例之銅粒子,欠缺分散性,發生凝聚。其結果,可知膜之表面性並不良好。As is clear from the results shown in Table 2, the copper particles obtained in the respective examples had a low carbon content, a sharp particle size distribution, and were fine particles. Further, it was found that the surface properties of the film formed by using the copper particles obtained in the respective examples were good. On the other hand, it is understood that the copper particles obtained in Comparative Example 1 have a low carbon content, but they are less dispersible and agglomerate than the copper particles of the examples. As a result, it was found that the surface properties of the film were not good.

又,雖未示於表中,但關於實施例及比較例中獲得之銅粒子,於含有50 ppm之氧氣之氦氣環境中進行TG-MS之測定(升溫速度100℃/min),結果各實施例之銅粒子於0~1000℃之溫度範圍未觀察到任何波峰,相對於此,比較例3之銅粒子於800℃附近觀察到源自內含之碳之波峰。Further, although not shown in the table, the copper particles obtained in the examples and the comparative examples were subjected to measurement of TG-MS in a helium atmosphere containing 50 ppm of oxygen (temperature up rate 100 ° C/min), and each of the results In the copper particles of the examples, no peak was observed in the temperature range of 0 to 1000 ° C. On the other hand, the copper particles of Comparative Example 3 observed peaks derived from the contained carbon at around 800 ° C.

進而,雖未示於表中,但藉由XPS調查實施例中獲得之銅粒子中所含之磷之狀態,結果確認磷係以氧化物之狀態存在,且磷係以未與銅化學鍵結之狀態存在。Further, although not shown in the table, the state of phosphorus contained in the copper particles obtained in the examples was investigated by XPS, and it was confirmed that the phosphorus was present in the form of an oxide, and the phosphorus was not chemically bonded to copper. The status exists.

與以上測定、評價不同,利用以下方法,對粒徑相同程度之實施例10及比較例2中獲得之銅粒子測定體積電阻值。其結果,實施例10之銅粒子之體積電阻值為5.1×10-2 Ω‧cm之較低值,相對於此,比較例2之銅粒子之體積電阻值為3.8×101 Ω‧cm之較高值。可認為比較例2之銅粒子之體積電阻值較高之原因在於含有大量(0.2%)磷。Unlike the above measurement and evaluation, the volume resistivity of the copper particles obtained in Example 10 and Comparative Example 2 having the same particle diameter was measured by the following method. As a result, the volume resistivity of the copper particles of Example 10 was a lower value of 5.1 × 10 -2 Ω ‧ cm, whereas the volume resistivity of the copper particles of Comparative Example 2 was 3.8 × 10 1 Ω · cm Higher value. The reason why the volume resistivity of the copper particles of Comparative Example 2 is high is that a large amount (0.2%) of phosphorus is contained.

[體積電阻值][Volume resistance value]

使用壓粉電阻測定系統(三菱化學,PD-41)與電阻率測定器(三菱化學,MCP-T600)測定壓粉電阻值。將試樣15 g投入探針氣缸中,並將探針單元設置於PD-41中。使用MCP-T600測定藉由油壓千斤頂施加1000 f/kg壓力時之電阻值。由所測定之電阻值與試樣厚度算出體積電阻值。The powder resistance value was measured using a powder resistance measuring system (Mitsubishi Chemical, PD-41) and a resistivity meter (Mitsubishi Chemical, MCP-T600). 15 g of the sample was placed in the probe cylinder, and the probe unit was placed in the PD-41. The resistance value at a pressure of 1000 f/kg applied by a hydraulic jack was measured using an MCP-T600. The volume resistance value was calculated from the measured resistance value and the sample thickness.

圖1係對實施例中所得之銅粒子之(D50 /D)與D之關係進行繪製而成之圖。Fig. 1 is a graph in which the relationship between (D 50 /D) and D of the copper particles obtained in the examples is plotted.

圖2係實施例1中所得之銅粒子之掃描式電子顯微鏡像。2 is a scanning electron microscope image of the copper particles obtained in Example 1.

(無元件符號說明)(no component symbol description)

Claims (8)

一種低碳銅粒子,其特徵在於,碳含量未達0.01重量%,含有磷100~1000ppm,藉由雷射繞射散射式粒度分佈測定法測得之累積體積90容量%下之體積累積粒徑D90 、與累積體積50容量%下之體積累積粒徑D50 之比D90 /D50 為1.3~2.5,且藉由圖像分析而測定之一次粒子之平均粒徑D為0.1~4μm,其中當將累積體積50容量%下之體積累積粒徑D50 與藉由圖像分析而測定之一次粒子之平均粒徑D之比(D50 /D)設為y、一次粒子之平均粒徑D設為x時,y與x滿足下式(1), A low carbon copper particle characterized by having a carbon content of less than 0.01% by weight, containing 100 to 1000 ppm of phosphorus, and a volume cumulative particle diameter of 90% by volume of a cumulative volume measured by a laser diffraction scattering particle size distribution measurement method D 90, 50 with the cumulative volume of the volume capacity of the% cumulative particle diameter D 50 of the ratio of D 90 / D 50 of 1.3 to 2.5, and is measured by the image analysis of the primary particle average particle diameter D of 0.1 ~ 4μm, Wherein the ratio (D 50 /D) of the volume cumulative particle diameter D 50 at the cumulative volume of 50% by volume to the average particle diameter D of the primary particles determined by image analysis is y, the average particle diameter of the primary particles When D is set to x, y and x satisfy the following formula (1), 如請求項1之低碳銅粒子,其中磷以氧化物之狀態存在。 The low carbon copper particle of claim 1, wherein the phosphorus is present in the form of an oxide. 如請求項1之低碳銅粒子,其為於表面之一部分具有非曲面部之略球狀。 The low carbon copper particle of claim 1, which has a slightly spherical shape having a non-curved portion on one of the surfaces. 一種低碳銅粒子之製造方法,其特徵在於,其係包括於含碳化學物種之不存在下(其中含碳銅化合物除外),向含有銅化合物之水性液中添加還原劑而進行銅之還原之還原步驟的製造低碳銅粒子之方法,且於無助於還原反應之鹽存在11~15mol/L之條件下,藉由還原而生成銅粒子。 A method for producing low carbon copper particles, which is characterized in that it is included in the absence of a carbon-containing chemical species (excluding a carbon-containing copper compound), and a reducing agent is added to an aqueous liquid containing a copper compound for copper reduction The method for producing low carbon copper particles in the reduction step, and forming copper particles by reduction in the presence of a salt which does not contribute to the reduction reaction in the presence of 11 to 15 mol/L. 如請求項4之製造方法,其包括於含有銅化合物之水性液中添加鹼性化合物而生成氧化銅,於第1還原步驟中,使生成之氧化銅還原成氧化亞銅,繼而於第2還原步驟中,還原氧化亞銅而生成銅粒子之步驟,且於第2還原步驟中,在無助於還原反應之鹽存在11~15mol/L之條件下,藉由還原而生成銅粒子。 The method of claim 4, comprising adding a basic compound to the aqueous liquid containing the copper compound to form copper oxide, and reducing the generated copper oxide to cuprous oxide in the first reduction step, followed by the second reduction In the step, copper oxide is reduced to form copper particles, and in the second reduction step, copper particles are formed by reduction in the presence of a salt which does not contribute to the reduction reaction in the range of 11 to 15 mol/L. 如請求項5之製造方法,其中於第1還原步驟之後,不將氧化亞銅自溶液分離而供給至第2還原步驟,且於第1還原步驟之後、第2還原步驟之前添加無助於還原反應之鹽,在無助於還原反應之鹽之總濃度成為11~15mol/L之條件下,藉由還原而生成銅粒子。 The manufacturing method of claim 5, wherein after the first reduction step, the cuprous oxide is not separated from the solution and supplied to the second reduction step, and after the first reduction step and before the second reduction step, the addition does not contribute to the reduction. The salt of the reaction forms copper particles by reduction under the condition that the total concentration of the salt which does not contribute to the reduction reaction is 11 to 15 mol/L. 如請求項5之製造方法,其中於第1還原步驟之後,將氧化亞銅自溶液分離,製備包含經分離之氧化亞銅且含有無助於還原反應之鹽11~15mol/L之漿料,將所製備之漿料供給至第2還原步驟,藉由還原而生成銅粒子。 The method of claim 5, wherein after the first reduction step, the cuprous oxide is separated from the solution to prepare a slurry comprising the separated cuprous oxide and containing a salt which does not contribute to the reduction reaction, 11 to 15 mol/L, The prepared slurry is supplied to the second reduction step, and copper particles are produced by reduction. 一種導電膏,其特徵在於含有如請求項1之低碳銅粒子。A conductive paste characterized by containing low carbon copper particles as claimed in claim 1.
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