TWI490923B - Thin film device - Google Patents
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- TWI490923B TWI490923B TW102108322A TW102108322A TWI490923B TW I490923 B TWI490923 B TW I490923B TW 102108322 A TW102108322 A TW 102108322A TW 102108322 A TW102108322 A TW 102108322A TW I490923 B TWI490923 B TW I490923B
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- 239000010409 thin film Substances 0.000 title claims description 30
- 239000010408 film Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/005—Non square semiconductive diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
本發明係關於一種薄膜裝置，特別是一種可增強結構強度並可使結構穩定而堅固且不變形的薄膜裝置。The present invention relates to a film device, and more particularly to a film device which can enhance structural strength and which can make the structure stable and strong without deformation.
在半導體製程中，大多數的元件製作皆自金屬層與氧化層的連續製程而來，其中金屬層多由物理性方式所沉積形成，故金屬層通常具有張應力，而氧化層多由化學性方式所沉積形成，故氧化層通常具有壓應力。微機電(Micro-Electro-Mechanical-System，以下簡稱MEMS)元件為一種常見且使用金屬層與氧化層相互堆疊形成的半導體元件，所以MEMS元件的殘留應力是一個具有壓應力與張應力所組合而成的等效應力值。以半導體製程製作的MEMS元件其最大的優點為整合特殊用途積體電路(Application-Specific Integrated Circuit,ASIC)與MEMS於同一平面，省去了複雜的封裝方式，但最大的難題即為MEMS結構的殘留應力。In the semiconductor process, most of the fabrication of the components comes from the continuous process of the metal layer and the oxide layer. The metal layer is mostly formed by physical deposition, so the metal layer usually has tensile stress, and the oxide layer is mostly chemical. The deposition is formed by the way, so the oxide layer usually has compressive stress. Micro-Electro-Mechanical-System (MEMS) components are a common semiconductor component formed by stacking metal layers and oxide layers, so the residual stress of MEMS components is a combination of compressive stress and tensile stress. The equivalent stress value. The biggest advantage of MEMS components fabricated in semiconductor manufacturing is the integration of Application-Specific Integrated Circuit (ASIC) and MEMS in the same plane, eliminating the need for complex packaging, but the biggest problem is the MEMS structure. Residual stress.
常見的XY軸加速度計即為MEMS元件的應用，因為金屬層具有張應力(結構呈上彎曲)，而氧化層具有壓應力(結構呈下彎曲)，其中氧化層是透過化學方式產生鍵結再由鍵結產生薄膜，此氧化層的沉積溫度高且鍵結與鍵結間的力量造成氧化層的殘留應力大於金屬的殘留應力，故殘留應力以氧化層為主並使MEMS結構呈下彎曲。此時，雖可使用快速退火(Rapid Thermal Annealing,RTA)系統以進行殘留應力的釋放，然而尚有複合 材料的熱膨脹係數必須進行考量，例如金屬鋁的熱膨脹係數是23 ppm/℃，而氧化層的熱膨脹係數是0.5 ppm/℃，兩種不同材料的堆疊造成熱膨脹係數約有46倍的差距。如此一來，當MEMS結構受到溫度的變化時，除了本身的殘留應力之外，仍必須再考量兩種不同材料堆疊時的熱膨脹現象。The common XY-axis accelerometer is the application of MEMS components because the metal layer has tensile stress (the structure is curved upwards), and the oxide layer has compressive stress (the structure is bent downward), wherein the oxide layer is chemically bonded. The film is formed by the bond, the deposition temperature of the oxide layer is high, and the force between the bond and the bond causes the residual stress of the oxide layer to be greater than the residual stress of the metal, so the residual stress is dominated by the oxide layer and the MEMS structure is bent downward. At this time, although a Rapid Thermal Annealing (RTA) system can be used for the release of residual stress, there is still a compound. The coefficient of thermal expansion of the material must be considered. For example, the thermal expansion coefficient of metallic aluminum is 23 ppm/°C, and the thermal expansion coefficient of the oxide layer is 0.5 ppm/°C. The stacking of two different materials causes a thermal expansion coefficient of about 46 times. As a result, when the MEMS structure is subjected to temperature changes, in addition to its own residual stress, it is necessary to consider the thermal expansion phenomenon when two different materials are stacked.
一般而言，目前各種已用於習知技術中之MEMS元件大多易受殘留應力與溫度的影響，且元件結構不夠堅固以致於不穩定而變形。另一方面，結構強度不足將造成MEMS元件在受到外力的變化時呈現翹曲的現象。In general, various MEMS components that have been used in the prior art are mostly susceptible to residual stress and temperature, and the component structure is not strong enough to be unstable and deformed. On the other hand, insufficient structural strength will cause the MEMS element to exhibit warpage when subjected to changes in external force.
本發明提供一種薄膜裝置，藉以增強結構的強度，並使結構穩定、堅固且不變形。The present invention provides a thin film device whereby the strength of the structure is enhanced and the structure is stable, strong and non-deformable.
根據本發明之一實施例，一種薄膜裝置具有複數個薄膜單元，每一薄膜單元包括一結晶層以及一環繞層。結晶層具有一多邊形的形狀。環繞層部份位於結晶層之上，此環繞層圍繞於結晶層。In accordance with an embodiment of the present invention, a thin film device has a plurality of thin film units, each thin film unit including a crystalline layer and a surrounding layer. The crystal layer has a polygonal shape. The surrounding layer portion is located above the crystalline layer, which surrounds the crystalline layer.
本發明所提供的薄膜裝置，藉由複數個具有正六邊形的結晶層，再藉由複數個環繞層以圍繞於這些結晶層，以組合這些結晶層與這些環繞層成為複數個薄膜單元，並透過一銜接層來連接這些薄膜單元，以進而增強薄膜裝置的結構強度，並可使薄膜裝置的結構穩定而堅固且不變形。如此一來，可有效改善薄膜裝置的靈敏度，以進而提升於微機電的應用範圍。The thin film device provided by the present invention comprises a plurality of crystal layers having a regular hexagon shape and surrounding the crystal layers by a plurality of surrounding layers to combine the crystal layers and the surrounding layers into a plurality of thin film units, and These thin film units are connected through a bonding layer to further enhance the structural strength of the thin film device, and the structure of the thin film device can be made stable and strong without deformation. In this way, the sensitivity of the thin film device can be effectively improved, thereby increasing the application range of the microelectromechanical device.
以上之關於本發明內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理，並且提供本發明之專利申請範圍更 進一步之解釋。The above description of the present invention and the following description of the embodiments are intended to illustrate and explain the spirit and principles of the present invention, and to provide the scope of the patent application of the present invention. Further explanation.
100‧‧‧薄膜裝置100‧‧‧film device
101‧‧‧薄膜單元101‧‧‧film unit
110‧‧‧結晶層110‧‧‧ Crystallized layer
112‧‧‧第一表面112‧‧‧ first surface
120‧‧‧環繞層120‧‧‧ wrapping layer
122‧‧‧第二表面122‧‧‧ second surface
130‧‧‧銜接層130‧‧‧Connection layer
第1圖係為本發明之薄膜裝置之薄膜單元的上視示意圖。Fig. 1 is a top plan view showing a film unit of the film device of the present invention.
第2圖係為本發明之薄膜裝置之薄膜單元的側視示意圖。Figure 2 is a side elevational view of the film unit of the film apparatus of the present invention.
第3圖係為本發明之薄膜裝置的局部示意圖。Figure 3 is a partial schematic view of the thin film device of the present invention.
第4圖係為本發明之薄膜裝置的製造流程圖。Figure 4 is a flow chart showing the manufacture of the thin film device of the present invention.
以下在實施方式中詳細敘述本發明之詳細特徵以及優點，其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施，且根據本說明書所揭露之內容、申請專利範圍及圖式，任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點，但非以任何觀點限制本發明之範疇。The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.
請同時參照『第1圖』、『第2圖』、及『第3圖』，係分別為根據本發明之一實施例之薄膜裝置之薄膜單元的上視示意圖、薄膜裝置之薄膜單元的側視示意圖、及薄膜裝置的局部示意圖。本實施例之薄膜裝置100適於微機電元件，例如麥克風、壓力計、高度計、流量計、或是觸覺感測器，亦即可透過此薄膜裝置100作為微機電的元件結構。此薄膜裝置100具有複數個薄膜單元101，每一薄膜單元101包括一結晶層110以及一環繞層120。Please refer to FIG. 1 , FIG. 2 , and FIG. 3 simultaneously, which are schematic views of the film unit of the thin film device according to an embodiment of the present invention, and the side of the thin film unit of the thin film device. A schematic view, and a partial schematic view of a thin film device. The thin film device 100 of the present embodiment is suitable for a microelectromechanical component, such as a microphone, a pressure gauge, an altimeter, a flow meter, or a tactile sensor, or through the thin film device 100 as a microelectromechanical component structure. The thin film device 100 has a plurality of thin film units 101 each including a crystal layer 110 and a surrounding layer 120.
結晶層110具有一第一表面112且大致上可呈一多邊形的形狀，亦即此薄膜裝置100具有複數個結晶層110，且這些結晶層110彼此相 鄰並位於同一平面上。在本實施例中，結晶層110之多邊形的形狀例如可為正六邊形，此結晶層110例如可接收來自於各方向的複數個水平分力或是複數個垂直分力，並致使這些水平分力或是這些垂直分力得以彼此互相達成力平衡的狀態。換句話說，此結晶層110可具有穩定的水平位移或是垂直位移的結構特性。其中，結晶層110的材料例如可為多晶矽，但本實施例不限於此，結晶層110亦可使用其他熱膨脹係數小的材料來實施。The crystal layer 110 has a first surface 112 and may have a substantially polygonal shape, that is, the thin film device 100 has a plurality of crystal layers 110, and the crystal layers 110 are mutually Neighbors are on the same plane. In this embodiment, the shape of the polygon of the crystal layer 110 may be, for example, a regular hexagon. The crystal layer 110 may receive, for example, a plurality of horizontal component forces or a plurality of vertical component forces from various directions, and cause the horizontal components. Force or these vertical components can be balanced with each other. In other words, the crystalline layer 110 can have structural characteristics of stable horizontal displacement or vertical displacement. The material of the crystal layer 110 may be, for example, polycrystalline germanium. However, the embodiment is not limited thereto, and the crystal layer 110 may be implemented by using other materials having a small thermal expansion coefficient.
環繞層120具有一第二表面122且部份位於結晶層110之第一表面112之上，且環繞層120圍繞於結晶層110。在本實施例中，此環繞層120用以增強前述之結晶層110的結構強度，此環繞層120例如可接收前述之各方向的複數個水平分力或是複數個垂直分力，並致使結晶層110具有穩定的水平位移或是垂直位移的結構特性，亦可防止結晶層110受這些水平分力或是這些垂直分力的影響而導致變形。其中，環繞層120的材料例如可為鎢，但本實施例不限於此，環繞層120亦可使用其他結構硬度高的材料來實施。The surrounding layer 120 has a second surface 122 and is partially over the first surface 112 of the crystalline layer 110, and the surrounding layer 120 surrounds the crystalline layer 110. In this embodiment, the surrounding layer 120 is used to enhance the structural strength of the foregoing crystalline layer 110. The surrounding layer 120 can receive, for example, a plurality of horizontal component forces or a plurality of vertical component forces in the respective directions, and cause crystallization. The layer 110 has a structural characteristic of stable horizontal displacement or vertical displacement, and also prevents the crystal layer 110 from being deformed by these horizontal component forces or these vertical component forces. The material of the surrounding layer 120 may be, for example, tungsten. However, the embodiment is not limited thereto, and the surrounding layer 120 may also be implemented by using other materials having high structural rigidity.
此薄膜裝置100更包括一銜接層130，用以連接前述之複數個薄膜單元101，且銜接層130部份位於每一薄膜單元101之環繞層120之第二表面122之上。在本實施例中，此銜接層130例如可作為類似彈簧類的減震結構，且銜接層130用以接收來自於外界的施力或是振動所導致的水平位移或是垂直位移，並致使這些薄膜單元101保持穩定且堅固的結構而不至於變形。其中，銜接層130的材料例如可為鋁、鎢、或鉑等金屬，但本實施例不限於此，銜接層130亦可使用其他類似的金屬材料來實施。The film device 100 further includes an interface layer 130 for connecting the plurality of film units 101, and the bonding layer 130 is partially disposed on the second surface 122 of the surrounding layer 120 of each of the film units 101. In this embodiment, the engaging layer 130 can be used as a spring-like shock absorbing structure, for example, and the engaging layer 130 is configured to receive horizontal displacement or vertical displacement caused by external force or vibration, and cause these The film unit 101 maintains a stable and strong structure without being deformed. The material of the bonding layer 130 may be, for example, a metal such as aluminum, tungsten, or platinum. However, the embodiment is not limited thereto, and the bonding layer 130 may also be implemented by using other similar metal materials.
請接著參照『第4圖』，係為根據本發明之一實施例之薄 膜裝置的製造流程圖。首先，可於例如一矽基板上使用薄膜沉積的方式，以成長例如多晶矽的複數個結晶層110(步驟S401)。接著，先將例如光阻的材料塗佈於這些多晶矽結晶層110之上方，透過一第一光罩再經由曝光與顯影之微影製程(Lithography)將定義出一第一硬遮罩(Hard Mask)，此第一硬遮罩所未遮蔽的區域即為欲製作例如鎢的複數個環繞層120之區域(步驟S402)。接著，使用例如電子槍(E-Gun)或是濺鍍機(Sputtering)以將金屬鎢鍍膜(Coating)於這些結晶層110之第一表面112之上(步驟S403)。接著，將位於此第一硬遮罩所遮蔽之區域上方之多餘的金屬鎢掀離(Lift-Off)，以形成這些鎢的環繞層120(步驟S404)。Please refer to FIG. 4 again, which is a thin according to an embodiment of the present invention. Manufacturing flow chart of the membrane device. First, a plurality of crystal layers 110 such as polycrystalline germanium may be grown by, for example, thin film deposition on a substrate (step S401). Next, a material such as a photoresist is first applied over the polycrystalline germanium crystal layer 110, and a first hard mask (Hard Mask) is defined through a first photomask and through exposure and development lithography (Lithography). The unmasked area of the first hard mask is an area where a plurality of surrounding layers 120 such as tungsten are to be formed (step S402). Next, a metal tungsten is coated on the first surface 112 of the crystal layer 110 using, for example, an electron gun (E-Gun) or a sputtering machine (step S403). Next, the excess metal tungsten located above the area covered by the first hard mask is lifted-off to form the surrounding layer 120 of the tungsten (step S404).
接著，將前述之光阻的材料再塗佈於由這些結晶層110與這些環繞層120所組成之複數個薄膜單元101之上方，透過一第二光罩再經由前述之曝光與顯影的微影製程以定義出一第二硬遮罩，此第二硬遮罩所未遮蔽的區域即為欲製作例如金屬的銜接層130之區域(步驟S405)。接著，使用前述之電子槍或是濺鍍機以將金屬鍍膜於這些環繞層120之第二表面122之上(步驟S406)。最後，將位於此第二硬遮罩所遮蔽之區域上方之多餘的金屬掀離，以形成金屬的銜接層130(步驟S407)。Then, the photoresist material is further coated on the plurality of thin film units 101 composed of the crystal layer 110 and the surrounding layers 120, and then passed through the second photomask and the lithography through the foregoing exposure and development. The process defines a second hard mask, and the unmasked area of the second hard mask is the area where the bonding layer 130 such as metal is to be formed (step S405). Next, an electron gun or a sputtering machine as described above is used to deposit a metal on the second surface 122 of the surrounding layer 120 (step S406). Finally, the excess metal located above the area covered by the second hard mask is peeled off to form the metal tie layer 130 (step S407).
綜上所述，本發明之實施例所揭露的薄膜裝置，藉由複數個具有正六邊形的結晶層，再藉由複數個環繞層以圍繞於這些結晶層，以組合這些結晶層與這些環繞層成為複數個薄膜單元，並透過一銜接層來連接這些薄膜單元，以進而增強薄膜裝置的結構強度，並可使薄膜裝置的結構穩定而堅固且不變形。如此一來，可有效改善薄膜裝置的靈敏度，以進而提升於微機電的應用範圍。In summary, the thin film device disclosed in the embodiments of the present invention surrounds the crystal layers by a plurality of crystal layers having a regular hexagon and surrounds the crystal layers by a plurality of surrounding layers to surround the crystal layers. The layer is formed into a plurality of film units, and the film units are joined through an interface layer to further enhance the structural strength of the film device, and the structure of the film device can be stabilized and strong without deformation. In this way, the sensitivity of the thin film device can be effectively improved, thereby increasing the application range of the microelectromechanical device.
雖然本發明以前述之實施例揭露如上，然其並非用以限定本發明。在不脫離本發明之精神和範圍內，所為之更動與潤飾，均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
100‧‧‧薄膜裝置100‧‧‧film device
101‧‧‧薄膜單元101‧‧‧film unit
110‧‧‧結晶層110‧‧‧ Crystallized layer
112‧‧‧第一表面112‧‧‧ first surface
120‧‧‧環繞層120‧‧‧ wrapping layer
122‧‧‧第二表面122‧‧‧ second surface
130‧‧‧銜接層130‧‧‧Connection layer
Claims (5)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
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| TW102108322A TWI490923B (en) | 2013-03-08 | 2013-03-08 | Thin film device |
| CN201410071474.5A CN104030229A (en) | 2013-03-08 | 2014-02-28 | Film device |
| US14/200,905 US9018771B2 (en) | 2013-03-08 | 2014-03-07 | Thin film apparatus |
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| TW102108322A TWI490923B (en) | 2013-03-08 | 2013-03-08 | Thin film device |
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| TWI490923B true TWI490923B (en) | 2015-07-01 |
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| TW (1) | TWI490923B (en) |
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| JP2017223643A (en) * | 2016-06-14 | 2017-12-21 | 株式会社デンソー | Pressure sensor |
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| US20100059244A1 (en) * | 2007-03-05 | 2010-03-11 | Kyocera Corporation | Microstructure Apparatus and Method for Manufacturing Microstructure Apparatus |
| TW201012739A (en) * | 2008-09-10 | 2010-04-01 | Panasonic Corp | MEMS device and method for manufacturing the same |
| CN102757010A (en) * | 2011-04-20 | 2012-10-31 | 特罗尼克斯微系统有限公司 | A micro-electromechanical system (MEMS) device |
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| US6876046B2 (en) * | 2002-02-07 | 2005-04-05 | Superconductor Technologies, Inc. | Stiction alleviation using passivation layer patterning |
| KR100661347B1 (en) * | 2004-10-27 | 2006-12-27 | 삼성전자주식회사 | Micro thin film structure and MEMS switch using the same and method for manufacturing them |
| US7227432B2 (en) * | 2005-06-30 | 2007-06-05 | Robert Bosch Gmbh | MEMS resonator array structure and method of operating and using same |
| JP5309898B2 (en) * | 2008-10-31 | 2013-10-09 | セイコーエプソン株式会社 | Pressure sensor device |
| US8464589B2 (en) * | 2010-10-14 | 2013-06-18 | Solid State System Co., Ltd. | Micro-electromechanical systems (MEMS) structure |
| US20120170103A1 (en) * | 2010-12-31 | 2012-07-05 | Pavan Gupta | Spatial Light Modulators and Fabrication Techniques |
| US8653634B2 (en) * | 2012-06-11 | 2014-02-18 | Advanced Semiconductor Engineering, Inc. | EMI-shielded semiconductor devices and methods of making |
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| US20100059244A1 (en) * | 2007-03-05 | 2010-03-11 | Kyocera Corporation | Microstructure Apparatus and Method for Manufacturing Microstructure Apparatus |
| TW201012739A (en) * | 2008-09-10 | 2010-04-01 | Panasonic Corp | MEMS device and method for manufacturing the same |
| CN102757010A (en) * | 2011-04-20 | 2012-10-31 | 特罗尼克斯微系统有限公司 | A micro-electromechanical system (MEMS) device |
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| TW201435981A (en) | 2014-09-16 |
| US20140252362A1 (en) | 2014-09-11 |
| CN104030229A (en) | 2014-09-10 |
| US9018771B2 (en) | 2015-04-28 |
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