TWI496901B - 圓筒型濺鍍靶材及其製造方法 - Google Patents

圓筒型濺鍍靶材及其製造方法 Download PDF

Info

Publication number: TWI496901B
Authority: TW; Taiwan
Prior art keywords: sputtering target; alloy; cylindrical sputtering; cylindrical; mold
Prior art date: 2013-03-29

Application number

TW103111492A

Other languages

English (en)

Chinese (zh)

Other versions

TW201506174A (zh

Inventor

Shinji Kato

Shoubin Zhang

Shozo Komiyama

Original Assignee

Mitsubishi Materials Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-03-29

Filing date

2014-03-27

Publication date

2015-08-21

2014-03-27 Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp

2015-02-16 Publication of TW201506174A publication Critical patent/TW201506174A/zh

2015-08-21 Application granted granted Critical

2015-08-21 Publication of TWI496901B publication Critical patent/TWI496901B/zh

Links

238000005477 sputtering target Methods 0.000 title claims description 106
238000004544 sputter deposition Methods 0.000 title claims description 34
239000013078 crystal Substances 0.000 claims description 79
238000000034 method Methods 0.000 claims description 54
238000005266 casting Methods 0.000 claims description 32
238000009750 centrifugal casting Methods 0.000 claims description 22
238000009749 continuous casting Methods 0.000 claims description 16
229910000881 Cu alloy Inorganic materials 0.000 claims description 11
238000004519 manufacturing process Methods 0.000 claims description 11
230000005484 gravity Effects 0.000 claims description 9
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
229910052760 oxygen Inorganic materials 0.000 claims description 8
239000001301 oxygen Substances 0.000 claims description 8
229910045601 alloy Inorganic materials 0.000 claims description 4
239000000956 alloy Substances 0.000 claims description 4
229910000882 Ca alloy Inorganic materials 0.000 claims 1
229910000807 Ga alloy Inorganic materials 0.000 description 86
239000010408 film Substances 0.000 description 32
239000000155 melt Substances 0.000 description 22
230000000052 comparative effect Effects 0.000 description 20
230000015572 biosynthetic process Effects 0.000 description 16
238000001816 cooling Methods 0.000 description 15
238000002347 injection Methods 0.000 description 15
239000007924 injection Substances 0.000 description 15
235000014347 soups Nutrition 0.000 description 15
238000005336 cracking Methods 0.000 description 13
238000007711 solidification Methods 0.000 description 12
230000008023 solidification Effects 0.000 description 12
239000000203 mixture Substances 0.000 description 9
238000009826 distribution Methods 0.000 description 8
238000001755 magnetron sputter deposition Methods 0.000 description 8
230000002159 abnormal effect Effects 0.000 description 6
150000001875 compounds Chemical class 0.000 description 6
210000004027 cell Anatomy 0.000 description 5
238000005304 joining Methods 0.000 description 5
230000008018 melting Effects 0.000 description 5
238000002844 melting Methods 0.000 description 5
238000005204 segregation Methods 0.000 description 5
239000013077 target material Substances 0.000 description 5
239000010409 thin film Substances 0.000 description 5
238000000465 moulding Methods 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
229910000831 Steel Inorganic materials 0.000 description 3
238000005259 measurement Methods 0.000 description 3
239000002245 particle Substances 0.000 description 3
239000000843 powder Substances 0.000 description 3
239000010959 steel Substances 0.000 description 3
239000000758 substrate Substances 0.000 description 3
238000006243 chemical reaction Methods 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000009616 inductively coupled plasma Methods 0.000 description 2
239000007788 liquid Substances 0.000 description 2
239000012768 molten material Substances 0.000 description 2
238000005245 sintering Methods 0.000 description 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
229910052790 beryllium Inorganic materials 0.000 description 1
238000005119 centrifugation Methods 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
210000001787 dendrite Anatomy 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000004512 die casting Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000011156 evaluation Methods 0.000 description 1
238000000605 extraction Methods 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
229910052748 manganese Inorganic materials 0.000 description 1
238000000691 measurement method Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
238000007747 plating Methods 0.000 description 1
238000005096 rolling process Methods 0.000 description 1
239000000523 sample Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000005361 soda-lime glass Substances 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000004575 stone Substances 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
238000004781 supercooling Methods 0.000 description 1
230000008646 thermal stress Effects 0.000 description 1
229910052718 tin Inorganic materials 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
229910052727 yttrium Inorganic materials 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/001—Continuous casting of metals, i.e. casting in indefinite lengths of specific alloys
- B22D11/004—Copper alloys
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/006—Continuous casting of metals, i.e. casting in indefinite lengths of tubes
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D13/00—Centrifugal casting; Casting by using centrifugal force
- B22D13/02—Centrifugal casting; Casting by using centrifugal force of elongated solid or hollow bodies, e.g. pipes, in moulds rotating around their longitudinal axis
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D13/00—Centrifugal casting; Casting by using centrifugal force
- B22D13/02—Centrifugal casting; Casting by using centrifugal force of elongated solid or hollow bodies, e.g. pipes, in moulds rotating around their longitudinal axis
- B22D13/023—Centrifugal casting; Casting by using centrifugal force of elongated solid or hollow bodies, e.g. pipes, in moulds rotating around their longitudinal axis the longitudinal axis being horizontal
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
- B22D21/02—Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
- B22D21/025—Casting heavy metals with high melting point, i.e. 1000 - 1600 degrees C, e.g. Co 1490 degrees C, Ni 1450 degrees C, Mn 1240 degrees C, Cu 1083 degrees C
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
Continuous Casting (AREA)

TW103111492A 2013-03-29 2014-03-27 圓筒型濺鍍靶材及其製造方法 TWI496901B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2013071195		2013-03-29
JP2013240056A JP5622012B2 (ja)	2013-03-29	2013-11-20	円筒型スパッタリングターゲット及びその製造方法

Publications (2)

Publication Number	Publication Date
TW201506174A TW201506174A (zh)	2015-02-16
TWI496901B true TWI496901B (zh)	2015-08-21

Family

ID=51624480

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW103111492A TWI496901B (zh)	2013-03-29	2014-03-27	圓筒型濺鍍靶材及其製造方法

Country Status (6)

Country	Link
US (1)	US20160056025A1 (fr)
EP (1)	EP2980268B1 (fr)
JP (1)	JP5622012B2 (fr)
CN (1)	CN105074047B (fr)
TW (1)	TWI496901B (fr)
WO (1)	WO2014157519A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
MY162021A (en) *	2014-03-31	2017-05-31	Nippon Micrometal Corp	Bonding wire for semiconductor device use and method of production of same
KR101633414B1 (ko) *	2014-03-31	2016-06-24	닛데쓰스미킹 마이크로 메탈 가부시키가이샤	반도체 장치용 본딩 와이어 및 그 제조 방법
JP5828350B2 (ja) *	2014-04-11	2015-12-02	三菱マテリアル株式会社	円筒型スパッタリングターゲット用素材の製造方法
JP6390432B2 (ja) *	2015-01-07	2018-09-19	三菱マテリアル株式会社	Ｃｕ−Ｇａ合金円筒型スパッタリングターゲット、Ｃｕ−Ｇａ合金円筒型鋳塊、Ｃｕ−Ｇａ合金円筒型スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金円筒型鋳塊の製造方法
JP2016141863A (ja) *	2015-02-04	2016-08-08	三菱マテリアル株式会社	Ｃｕ合金スパッタリングターゲット及びその製造方法
JP6888294B2 (ja) *	2016-02-03	2021-06-16	三菱マテリアル株式会社	Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法、及び、Ｃｕ−Ｇａ合金スパッタリングターゲット
CN111590279A (zh) *	2020-06-03	2020-08-28	福建阿石创新材料股份有限公司	一种高纯金属旋转靶材及其制备方法
CN114086132B (zh) *	2021-11-26	2023-11-17	先导薄膜材料（广东）有限公司	一种铜镓靶材及其制备方法与应用
CN118577756B (zh) *	2023-12-29	2025-06-10	长沙鑫康新材料有限公司	一种管状旋转合金靶真空熔炼浇铸模具

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CN1302915A (zh) *	1999-11-05	2001-07-11	W.C.贺利氏股份有限及两合公司	管靶
CN100418235C (zh) *	2005-06-03	2008-09-10	清华大学	用于铜铟镓硒薄膜太阳能电池的铜镓合金靶的制备方法
JP2010116580A (ja) *	2008-11-11	2010-05-27	Solar Applied Materials Technology Corp	銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途

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US20050279630A1 (en) *	2004-06-16	2005-12-22	Dynamic Machine Works, Inc.	Tubular sputtering targets and methods of flowforming the same
US20100116341A1 (en) *	2008-11-12	2010-05-13	Solar Applied Materials Technology Corp.	Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP5643524B2 (ja) *	2009-04-14	2014-12-17	株式会社コベルコ科研	Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
JP5818139B2 (ja) *	2010-06-28	2015-11-18	日立金属株式会社	Ｃｕ−Ｇａ合金ターゲット材およびその製造方法
JP2012017481A (ja) *	2010-07-06	2012-01-26	Mitsui Mining & Smelting Co Ltd	Ｃｕ−Ｇａ合金およびＣｕ−Ｇａ合金スパッタリングターゲット
JP5769004B2 (ja) *	2011-04-22	2015-08-26	三菱マテリアル株式会社	スパッタリングターゲットおよびその製造方法
JP5519800B2 (ja) *	2011-08-29	2014-06-11	Ｊｘ日鉱日石金属株式会社	Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法

2013
- 2013-11-20 JP JP2013240056A patent/JP5622012B2/ja not_active Expired - Fee Related
2014
- 2014-03-27 TW TW103111492A patent/TWI496901B/zh not_active IP Right Cessation
- 2014-03-27 CN CN201480018190.8A patent/CN105074047B/zh not_active Expired - Fee Related
- 2014-03-27 US US14/779,603 patent/US20160056025A1/en not_active Abandoned
- 2014-03-27 WO PCT/JP2014/058867 patent/WO2014157519A1/fr not_active Ceased
- 2014-03-27 EP EP14773134.3A patent/EP2980268B1/fr active Active

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Publication number	Priority date	Publication date	Assignee	Title
CN1302915A (zh) *	1999-11-05	2001-07-11	W.C.贺利氏股份有限及两合公司	管靶
CN100418235C (zh) *	2005-06-03	2008-09-10	清华大学	用于铜铟镓硒薄膜太阳能电池的铜镓合金靶的制备方法
JP2010116580A (ja) *	2008-11-11	2010-05-27	Solar Applied Materials Technology Corp	銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途

Also Published As

Publication number	Publication date
TW201506174A (zh)	2015-02-16
EP2980268A1 (fr)	2016-02-03
JP5622012B2 (ja)	2014-11-12
US20160056025A1 (en)	2016-02-25
CN105074047B (zh)	2017-06-13
JP2014208877A (ja)	2014-11-06
EP2980268B1 (fr)	2021-06-02
CN105074047A (zh)	2015-11-18
EP2980268A4 (fr)	2016-11-30
WO2014157519A1 (fr)	2014-10-02

Legal Events

Date	Code	Title	Description
2024-05-21	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TWI496901B (zh)	2015-08-21	圓筒型濺鍍靶材及其製造方法
TWI546401B (zh)	2016-08-21	Cu-Ga alloy sputtering target and its manufacturing method
CN102656291B (zh)	2013-11-06	铟靶材及其制造方法
JP5254290B2 (ja)	2013-08-07	インジウムターゲット及びその製造方法
JP5086452B2 (ja)	2012-11-28	インジウムターゲット及びその製造方法
CN102732845A (zh)	2012-10-17	一种高纯度、高成分均匀性的镍铬合金靶材及其制备方法
TWI458849B (zh)	2014-11-01	Indium target and its manufacturing method
JP5750393B2 (ja)	2015-07-22	Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP6390432B2 (ja)	2018-09-19	Ｃｕ−Ｇａ合金円筒型スパッタリングターゲット、Ｃｕ−Ｇａ合金円筒型鋳塊、Ｃｕ−Ｇａ合金円筒型スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金円筒型鋳塊の製造方法
JP6456810B2 (ja)	2019-01-23	Ｉｎ−Ｃｕ合金スパッタリングターゲット及びその製造方法
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JP6147788B2 (ja)	2017-06-14	Ｃｕ−Ｇａ合金スパッタリングターゲット
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