TWI525171B - 晶圓加工體、晶圓加工用構件、晶圓加工用暫時性接著材及薄型晶圓之製造方法 - Google Patents
晶圓加工體、晶圓加工用構件、晶圓加工用暫時性接著材及薄型晶圓之製造方法 Download PDFInfo
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- TWI525171B TWI525171B TW101139514A TW101139514A TWI525171B TW I525171 B TWI525171 B TW I525171B TW 101139514 A TW101139514 A TW 101139514A TW 101139514 A TW101139514 A TW 101139514A TW I525171 B TWI525171 B TW I525171B
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- Prior art keywords
- wafer
- adhesive layer
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- temporary adhesive
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
- C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/14—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2848—Three or more layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011236960 | 2011-10-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201335321A TW201335321A (zh) | 2013-09-01 |
| TWI525171B true TWI525171B (zh) | 2016-03-11 |
Family
ID=47602771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101139514A TWI525171B (zh) | 2011-10-28 | 2012-10-25 | 晶圓加工體、晶圓加工用構件、晶圓加工用暫時性接著材及薄型晶圓之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9365681B2 (fr) |
| EP (1) | EP2587530B1 (fr) |
| JP (1) | JP5958262B2 (fr) |
| KR (1) | KR102008307B1 (fr) |
| TW (1) | TWI525171B (fr) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8999817B2 (en) * | 2012-02-28 | 2015-04-07 | Shin-Etsu Chemical Co., Ltd. | Wafer process body, wafer processing member, wafer processing temporary adhesive material, and method for manufacturing thin wafer |
| TWI534238B (zh) * | 2012-04-24 | 2016-05-21 | 信越化學工業股份有限公司 | Wafer processing body, wafer processing member, temporary processing material for wafer processing, and manufacturing method of thin wafer |
| JP5975528B2 (ja) * | 2012-10-11 | 2016-08-23 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
| JP5975918B2 (ja) * | 2013-03-27 | 2016-08-23 | 富士フイルム株式会社 | 半導体装置製造用仮接合用積層体、および、半導体装置の製造方法 |
| KR101774185B1 (ko) * | 2013-09-25 | 2017-09-01 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치, 접합 기판의 박리 방법 및 접착제의 제거 방법 |
| US9315696B2 (en) * | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
| WO2015079863A1 (fr) | 2013-11-26 | 2015-06-04 | Jsr株式会社 | Stratifié, procédé de traitement de base, composition pour fixation provisoire et dispositif à semi-conducteurs |
| CN105960697B (zh) * | 2014-01-29 | 2019-06-11 | 信越化学工业株式会社 | 晶片加工体、晶片加工用暂时粘合材料、及薄型晶片的制造方法 |
| JP6023737B2 (ja) * | 2014-03-18 | 2016-11-09 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
| JP6583639B2 (ja) * | 2014-06-10 | 2019-10-02 | 日産化学株式会社 | 仮接着剤を用いた積層体 |
| JP6156443B2 (ja) | 2014-08-13 | 2017-07-05 | Jsr株式会社 | 積層体および基材の処理方法 |
| JP6404787B2 (ja) | 2014-09-26 | 2018-10-17 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
| JP6225894B2 (ja) * | 2014-12-24 | 2017-11-08 | 信越化学工業株式会社 | ウエハの仮接着方法及び薄型ウエハの製造方法 |
| JP2018507539A (ja) * | 2015-01-14 | 2018-03-15 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板スタックから基板を剥離するための方法および装置 |
| WO2016180456A1 (fr) * | 2015-05-08 | 2016-11-17 | Imec Vzw | Procédé de fabrication de substrat de dispositif et de dispositif à semi-conducteurs |
| JP6443241B2 (ja) * | 2015-06-30 | 2018-12-26 | 信越化学工業株式会社 | ウエハ加工用仮接着材、ウエハ加工体、及び薄型ウエハの製造方法 |
| JP6502824B2 (ja) * | 2015-10-19 | 2019-04-17 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
| JP6463664B2 (ja) * | 2015-11-27 | 2019-02-06 | 信越化学工業株式会社 | ウエハ加工体及びウエハ加工方法 |
| US10074626B2 (en) | 2016-06-06 | 2018-09-11 | Shin-Etsu Chemical Co., Ltd. | Wafer laminate and making method |
| JP6791086B2 (ja) | 2016-10-11 | 2020-11-25 | 信越化学工業株式会社 | ウエハ積層体、その製造方法、及びウエハ積層用接着剤組成物 |
| JP6874584B2 (ja) | 2017-08-09 | 2021-05-19 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、積層体、及びパターン形成方法 |
| JP6866802B2 (ja) | 2017-08-09 | 2021-04-28 | 信越化学工業株式会社 | シリコーン骨格含有高分子化合物、感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、積層体、及びパターン形成方法 |
| JP6870657B2 (ja) | 2018-05-17 | 2021-05-12 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性ドライフィルム、及びパターン形成方法 |
| JP7035915B2 (ja) * | 2018-09-03 | 2022-03-15 | 信越化学工業株式会社 | 薄型ウエハの製造方法 |
| US11548985B2 (en) | 2018-11-28 | 2023-01-10 | Shin-Etsu Chemical Co., Ltd. | Siloxane polymer containing isocyanuric acid and polyether skeletons, photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device |
| JP7056541B2 (ja) | 2018-12-19 | 2022-04-19 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性ドライフィルム及びパターン形成方法 |
| KR20230087509A (ko) * | 2020-10-16 | 2023-06-16 | 브레우어 사이언스, 인코포레이션 | 웨이퍼-수준 패키징 적용을 위한 광자 디본딩 |
| CN115939017A (zh) * | 2023-03-02 | 2023-04-07 | 广东海拓创新技术有限公司 | 一种半导体临时键合设备 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2805741B2 (ja) * | 1992-12-04 | 1998-09-30 | 宇部興産株式会社 | 耐熱性接着剤組成物 |
| TW334469B (en) * | 1995-08-04 | 1998-06-21 | Doconitele Silicon Kk | Curable organosiloxane compositions and semiconductor devices |
| US6325885B1 (en) * | 1997-08-11 | 2001-12-04 | Vicki L. Harrison | Temporary pressure-sensitive adhesive |
| US6512037B1 (en) * | 2001-06-06 | 2003-01-28 | Dow Corning Corporation | Silicone composition and cured silicone product |
| JP4565804B2 (ja) | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
| US7534498B2 (en) | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
| JP4170839B2 (ja) | 2003-07-11 | 2008-10-22 | 日東電工株式会社 | 積層シート |
| JP4381860B2 (ja) * | 2004-03-24 | 2009-12-09 | 日東電工株式会社 | 補強半導体ウエハに固定された補強板の分離方法およびその装置 |
| WO2006093639A1 (fr) | 2005-03-01 | 2006-09-08 | Dow Corning Corporation | Procede de collage de tranche temporaire pour le traitement de semi-conducteurs |
| JP2006328104A (ja) | 2005-05-23 | 2006-12-07 | Jsr Corp | 接着剤組成物 |
| JP5027460B2 (ja) * | 2006-07-28 | 2012-09-19 | 東京応化工業株式会社 | ウエハの接着方法、薄板化方法、及び剥離方法 |
| DE102006048216A1 (de) * | 2006-10-11 | 2008-04-17 | Wacker Chemie Ag | Laminate mit thermoplastischen Polysiloxan-Harnstoff-Copolymeren |
| JP4336999B2 (ja) * | 2007-01-31 | 2009-09-30 | 信越化学工業株式会社 | シルフェニレン骨格含有高分子化合物及び光硬化性樹脂組成物並びにパターン形成方法及び基板回路保護用皮膜 |
| KR100844383B1 (ko) | 2007-03-13 | 2008-07-07 | 도레이새한 주식회사 | 반도체 칩 적층용 접착 필름 |
| KR100963675B1 (ko) * | 2008-03-14 | 2010-06-15 | 제일모직주식회사 | 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법 |
| JP5413340B2 (ja) * | 2009-09-30 | 2014-02-12 | 信越化学工業株式会社 | エポキシ基含有高分子化合物、これを用いた光硬化性樹脂組成物、パターン形成方法及び電気・電子部品保護用皮膜 |
| US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
| JP5348147B2 (ja) * | 2011-01-11 | 2013-11-20 | 信越化学工業株式会社 | 仮接着材組成物、及び薄型ウエハの製造方法 |
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2012
- 2012-10-11 JP JP2012225874A patent/JP5958262B2/ja active Active
- 2012-10-24 US US13/659,168 patent/US9365681B2/en active Active
- 2012-10-25 TW TW101139514A patent/TWI525171B/zh active
- 2012-10-26 KR KR1020120119864A patent/KR102008307B1/ko active Active
- 2012-10-26 EP EP20120190089 patent/EP2587530B1/fr active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013110391A (ja) | 2013-06-06 |
| EP2587530B1 (fr) | 2015-03-04 |
| KR102008307B1 (ko) | 2019-08-07 |
| EP2587530A2 (fr) | 2013-05-01 |
| EP2587530A3 (fr) | 2013-06-12 |
| US9365681B2 (en) | 2016-06-14 |
| JP5958262B2 (ja) | 2016-07-27 |
| US20130108866A1 (en) | 2013-05-02 |
| KR20130047629A (ko) | 2013-05-08 |
| TW201335321A (zh) | 2013-09-01 |
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