TWI525903B - Programmable antenna having a programmable substrate - Google Patents

Description

Programmable antenna with programmable substrate

The present invention relates generally to electromagnetics and, more particularly, to electromagnetic circuits.

It is known that an artificial magnetic conductor (AMC) suppresses surface wave current through a set of frequencies on the surface of the AMC. Also, the AMC can be used as a ground plane for the antenna or as a frequency selective surface bandgap.

The AMC can be implemented by a given size on a layer of the substrate and a metal block of a given spacing. The ground plane is on another layer of the substrate. Each metal block is coupled to the ground plane such that the combination of metal blocks, connections, ground planes, and substrate forms a resistor-inductor-capacitor (RLC) circuit that is in the same layer as the metal block in a set of frequencies AMC is generated on it.

It is also known that an integrated circuit (IC) substrate is composed of a pure compound (for example, germanium, antimony, gallium arsenide, etc.) to form a semiconductor. The conductivity of the substrate can be varied by adding impurities (i.e., dopants) to the pure compound. For a crystalline germanium substrate, boron or a phosphorous dopant can be added to change the conductivity of the substrate.

According to an aspect of the invention, there is provided a circuit comprising: a printed inductor; a printed antenna and a substrate supporting the printed inductor in a first region and supporting the printed antenna in a second region, wherein The first region has a high magnetic permeability and the second region has a high dielectric constant.

The substrate includes: a substrate material; a non-magnetic metal dielectric inclusion embedded in the substrate material in the first region; and a high dielectric constant metal dielectric a substance embedded in the substrate material in the second region.

The circuit further includes: a first variable impedance circuit that tunes the magnetic permeability of the first region; and a second variable impedance circuit that tunes the dielectric constant of the second region.

The circuit further includes a projection artificial magnetic mirror (PAMM) that produces an artificial magnetic conductor (AMC) as an electromagnetic characteristic at a distance above the surface of the semiconductor substrate.

The PAMM further includes: a plurality of artificial magnetic mirror (AMM) units, wherein one of the plurality of AMM units includes: a conductive element forming a lumped resistor-inductor-capacitor (RLC) circuit; And an impedance element coupled to the conductive element, wherein an impedance of the impedance element and an impedance of the RLC circuit determine an electromagnetic performance of an AMM unit that contributes to a given frequency range of the AMC.

The circuit further includes a capacitor supported in a third region of the substrate, wherein a capacitance of the capacitor changes as a function of a dielectric constant of the third region changes, thereby providing a radio frequency (RF) change Resistance.

The circuit further includes one of: a duplexer supported in a third region of the substrate, wherein the third region has at least one of a high dielectric constant and a high magnetic permeability; And being supported in the third region of the substrate, wherein the third region has at least one of a high dielectric constant and a high magnetic permeability; a load line of the power amplifier supported on the substrate a third region, wherein the third region has at least one of a high dielectric constant and a high magnetic permeability; and a phase shifter supported in a third region of the substrate, wherein the third region There is at least one of a high dielectric constant and a high magnetic permeability.

The circuit further includes: a plurality of metal dielectric cells, wherein one of the plurality of metal dielectric cells comprises: a conductive element forming a lumped resistor-inductor-capacitor (RLC) circuit; and an impedance An element coupled to the conductive element, wherein an impedance of the impedance element and an impedance of the RLC circuit are determined Electromagnetic performance of the unit within a fixed frequency range; wherein at least some of the plurality of metal dielectric units are tuned to control electromagnetic signals through the plurality of metal dielectric units via different paths to effectively provide Radio frequency (RF) switch.

In accordance with another aspect of the present invention, an antenna circuit is provided comprising: a programmable frequency selective surface; a high impedance surface having substantially parallel to the programmable frequency selective surface and at a distance from the programmable frequency selective surface And an antenna source radiating electromagnetic signals, wherein the electromagnetic signals are reflected from the high impedance surface and radiated through the programmable frequency selective surface, wherein electromagnetic properties of the programmable frequency selective surface are tuned for The desired performance of the antenna circuit.

The programmable frequency selective surface includes: a semiconductor material; and substrate inclusions embedded within the semiconductor material to provide dielectric constant, magnetic permeability, and conductivity characteristics that contribute to the electromagnetic properties.

The programmable frequency selection surface includes one or more variable impedance circuits that tune the dielectric constant, magnetic permeability, and conductivity characteristics.

The antenna circuit further includes a dielectric cap layer having a surface juxtaposed with the other surface of the programmable frequency selective surface.

The antenna source includes a dipole antenna.

The high impedance surface includes a substrate having a surface substantially parallel to the programmable frequency selective surface and at a distance from the programmable frequency selective surface, and a ground plane having a juxtaposition with another surface of the substrate a surface.

The high-impedance surface includes: a semiconductor material; and a substrate inclusion embedded in the semiconductor material, wherein the substrate inclusion provides a dielectric constant, a magnetic permeability, and a conductivity characteristic to the high-impedance surface .

According to another aspect of the present invention, there is provided an antenna circuit comprising: a substrate; an antenna on the substrate, wherein the antenna is located in a region of the substrate having a high dielectric constant; and a projected artificial magnetic mirror (PAMM), an artificial magnetic conductor (AMC) is generated at a distance above the surface of the substrate to promote the antenna's spokes Shooting mode.

The substrate includes: a substrate material; and a substrate inclusion embedded in the substrate material to produce a desired dielectric constant, magnetic permeability, and conductivity characteristics of the substrate.

The antenna circuit further includes: one or more variable impedance circuits that tune a dielectric constant, a magnetic permeability, and a conductivity characteristic of the substrate to provide a dielectric constant, a magnetic permeability, and a conductivity of the tuned substrate Rate characteristics.

The PAMM further includes: a plurality of artificial magnetic mirror (AMM) units, wherein one of the plurality of AMM units includes: a conductive element forming a lumped resistor-inductor-capacitor (RLC) circuit; And an impedance element coupled to the conductive element, wherein an impedance of the impedance element and an impedance of the RLC circuit determine an electromagnetic performance that contributes to an AMM unit within a given frequency range of the AMC.

The geometry of the AMC includes one of the following: spherical; partially spherical; cylindrical; partially cylindrical; planar; textured surface; concave; and convex.

10,12‧‧‧Communication devices

14‧‧‧Base frequency processing module

16‧‧‧Transmitter section

18‧‧‧ Receiver section

20‧‧‧ Radio front-end circuit

22‧‧‧Antenna

24‧‧‧Low Noise Amplifier (LNA)

26‧‧‧Power Amplifier Driver (PA)

28‧‧‧Antenna interface

30‧‧‧Receiver transmitter isolation circuit

32‧‧‧Antenna Tuning Unit

34‧‧‧Control signal

40‧‧‧Substrate

42‧‧‧Inductors

44‧‧‧First area

46‧‧‧Second area

48‧‧‧Non-magnetic metal dielectric inclusions

50‧‧‧High dielectric constant metal dielectric inclusions

60‧‧‧Structural change layer

62‧‧‧First variable impedance circuit

70‧‧‧Projected Artificial Magnetic Mirror (PAMM)

72, 80‧‧‧Artificial Magnetic Mirror (AMM) Unit

74‧‧‧Connector

76, 142, 216‧‧‧ ground plane

82‧‧‧Conducting components

84‧‧‧ impedance components

90, 152, 220‧‧‧ control modules

92‧‧‧Control messages

94‧‧‧Artificial Magnetic Conductor (AMC)

100‧‧‧ Capacitor plate

104‧‧‧Support circuit

106‧‧‧High dielectric constant

112‧‧‧Metal dielectric unit

114‧‧‧RLC circuit

116, 232‧‧‧ impedance components

118, 120‧‧‧Metal dielectric unit control electromagnetic signal

130‧‧‧Programmable Frequency Selective Surface (FSS)

132‧‧‧High impedance surface

134‧‧‧Antenna source

135, 213‧‧‧ substrate contents

136‧‧‧Electromagnetic signal

138‧‧‧ gap

140‧‧‧ dielectric cover

150‧‧‧Metal inclusions

154‧‧‧Control signal

156‧‧‧Bidirectional coupling circuit (BCC)

158‧‧‧Antenna coupling circuit

162‧‧‧Bidirectional Current Amplifier (BCA)

164‧‧‧ electric field

170‧‧‧First area

172‧‧‧Second area

174‧‧‧First type circuit

176‧‧‧Second type circuit

178‧‧‧Other types of circuits

180‧‧‧Other layers

182‧‧‧ substrate layer

188‧‧‧Metal dielectric structure

190‧‧‧Porous enamel pattern

192, 210‧‧‧ areas

200‧‧‧ third area

202‧‧‧fourth area

204‧‧‧ Third type electronic circuit

206‧‧‧fourth type electronic circuit

212‧‧‧Programmable substrate supporting electronic circuit

214‧‧‧RLC components

218‧‧‧Variable impedance

230‧‧‧RLC circuit

1 is a schematic block diagram of one embodiment of a communication device in accordance with the present invention; FIG. 2 is a schematic block diagram of one embodiment of a communication device in accordance with the present invention; and FIG. 3 is a supporting antenna and inductor in accordance with the present invention. Figure (4 is a side view) of one embodiment of a substrate; Figure 4 is a view of another embodiment of a substrate supporting an antenna and an inductor according to the present invention; Figure 5 is a diagram of a supporting antenna and an inductor according to the present invention. FIG. 6 is a view showing another embodiment of a substrate supporting an antenna and an inductor according to the present invention; and FIG. 7 is a projection artificial magnetic mirror according to the present invention. A diagram of one embodiment of a PAMM); Figure 8 is an implementation of an artificial magnetic mirror (AMM) of a PAMM in accordance with the present invention. Figure 9 is a diagram of an embodiment of an antenna having an artificial magnetic conductor (AMC) produced by a projected artificial magnetic mirror in accordance with the present invention; Figure 10 is a supporting varactor in accordance with the present invention; Figure 1 is a diagram of one embodiment of a substrate of an antenna and an inductor; Figure 11 is a diagram of one embodiment of a substrate supporting a circuit, an antenna and an inductor according to the present invention; and Figure 12 is used as a radio frequency (in accordance with the present invention) FIG. 13 is a diagram of one embodiment of a metal dielectric unit array according to the present invention; FIG. 14 is a view of an embodiment of a metal dielectric unit according to the present invention; 1 is a diagram of one embodiment of a programmable frequency selective surface (FSS) of the antenna of FIG. 14 or FIG. 16 according to the present invention; FIG. 16 is another embodiment of an antenna according to the present invention. Figure 17 is a diagram of one embodiment of a high impedance surface of the antenna of Figure 14 or Figure 16; Figure 18 is a diagram of one embodiment of a programmable antenna in accordance with the present invention; Figure 19 Root A diagram of one example of operation of a programmable antenna of the present invention; FIG. 20 is a diagram of another embodiment of a programmable antenna in accordance with the present invention; and FIG. 21 is another example of operation of a programmable antenna in accordance with the present invention. Figure 22 is a diagram (side view) of one embodiment of a substrate supporting a plurality of electronic circuits in accordance with the present invention; and Figure 23 is another embodiment of a substrate supporting a plurality of electronic circuits in accordance with the present invention. FIG. 24 is a view (side view) of another embodiment of a substrate supporting a plurality of electronic circuits according to the present invention; FIG. 25 is another embodiment of a substrate supporting a plurality of electronic circuits according to the present invention; An implementation Figure 26 is a diagram of another embodiment of a substrate supporting a plurality of electronic circuits in accordance with the present invention; Figure 27 is a diagram of another embodiment of a substrate supporting a plurality of electronic circuits in accordance with the present invention. (Top view); FIG. 28 is a diagram (top view) of another embodiment of a substrate supporting a plurality of electronic circuits according to the present invention; FIG. 29 is another embodiment of a substrate supporting a plurality of electronic circuits according to the present invention. FIG. 30 is a diagram (side view) of one embodiment of a programmable substrate supporting a plurality of electronic circuits according to the present invention; and FIG. 31 is a diagram of supporting a plurality of electronic circuits according to the present invention. A side view (side view) of another embodiment of a programmable substrate; FIG. 32 is a diagram of one embodiment of an AMM unit, a metal dielectric unit or a variable impedance circuit in accordance with the present invention; A view of another embodiment of an AMM cell, a metal dielectric cell, or a variable impedance circuit; FIG. 34 is an illustration of one embodiment of a variable impedance of an AMM cell, a metal dielectric cell, or a variable impedance circuit in accordance with the present invention. Figure 35; and Figure 35 is a diagram of another embodiment of a variable impedance of an AMM cell, metal dielectric cell or variable impedance circuit in accordance with the present invention.

1 is a schematic block diagram of one embodiment of a communication device 10, 12 that communicates via radio frequency (RF) and/or millimeter wave (MMW) communication media. Each communication device 10, 12 includes a baseband processing module 14, a transmitter portion 16, a receiver portion 18, and a radio front-end circuit 20. The radio front end circuit 20 will be described in more detail with reference to one or more of FIGS. 2 through 35. It should be noted that the communication devices 10, 12 can be cellular phones, wireless local area networks (WLANs). Client, WLAN access point, computer, video game console and/or player unit.

In one example of operation, one of the communication devices 10, 12 transmits data (eg, sound, text, audio, video, graphics, etc.) to another communication device. In this case, the baseband processing module 14 receives data (eg, outbound data) and is based on one or more wireless communication standards (eg, GSM, CDMA, WCDMA, HSUPA, HSDPA, WiMAX, EDGE). , GPRS, IEEE 802.11, Bluetooth, ZigBee, Universal Mobile Telecommunications System (UMTS), Long Term Evolution (LTE), IEEE 802.16, Evolution Data Optimization (EV-DO), etc., convert it into one or more outbound stations Symbol stream. Such conversions include one or more of the following: scrambling, puncturing, encoding, interleaving, constellation mapping, modulation, frequency spreading, frequency hopping, beamforming, space-time block coding (space-time block) Encoding), space-frequency block coding, frequency domain-time domain conversion, and/or digital baseband-intermediate frequency conversion. It should be noted that the baseband processing module converts the outbound data into a single outbound symbol stream for single-input single-output (SISO) communication and/or multi-input single-output (MISO) communication, and converts outbound data. Multiple outbound symbol streams for single-input multiple-output (SIMO) communication and/or multiple-input multiple-output (MIMO) communication.

Transmitter portion 16 converts one or more outbound symbol streams into one or more outbound RF signals having carriers within a given frequency band (eg, 2.4 GHz, 5 GHz, 57-66 GHz, etc.) frequency. In one embodiment, this can be done by mixing one or more outbound symbol streams with local oscillations to produce one or more upconverted signals. One or more power amplifiers and/or power amplifier drivers, which may be located in the front end circuitry and/or in the transmitter section, amplify one or more upconverted signals (which may be RF bandpass filtered) to produce one or more Outbound RF signal. In another embodiment, the transmitter portion 16 includes an oscillator that produces an oscillation. The outbound symbol stream provides phase information (eg, +/- Δθ [phase shift] and / or θ (t) [phase modulation]), the phase information adjusts the phase of the oscillation to produce a phase adjusted RF signal, The signal is transmitted as an outbound RF signal. In another embodiment, outbound The symbol stream includes an amplitude message (eg, A(t) [amplitude modulation]) that is used to adjust the amplitude of the phase adjusted RF signal to produce an outbound RF signal.

In another embodiment, the transmitter portion 16 includes an oscillator that produces an oscillation. The outbound symbol stream provides a frequency message (eg, +/- Δf [frequency shift] and/or f(t) [frequency modulation]), which adjusts the frequency of the oscillation to produce a frequency adjusted RF signal, which is used as the signal Outbound RF signals are transmitted. In another embodiment, the outbound symbol stream includes an amplitude message that is used to adjust the amplitude of the frequency adjusted RF signal to produce an outbound RF signal. In yet another embodiment, the transmitter portion includes an oscillator that produces an oscillation. The outbound symbol stream provides amplitude information (eg, +/- ΔA [amplitude shift] and/or A(t) [amplitude modulation]), which adjusts the amplitude of the oscillation to produce an outbound RF signal.

The radio front end circuitry 20 receives one or more outbound RF signals and transmits this/these signals. The radio front end circuit 20 of the other communication device receives one or more RF signals and provides this/these signals to the receiver portion 18.

Receiver portion 18 amplifies one or more inbound RF signals to produce one or more amplified inbound RF signals. Receiver portion 18 then mixes the in-phase (I) and quadrature (Q) components of the amplified inbound RF signal with the in-phase and quadrature (Q) components of the local oscillation to produce one or more sets of mixed I signals and Mixed Q signal. Each of the mixed I and Q signals is combined to produce one or more inbound symbol streams. In this embodiment, each of the one or more inbound symbol streams may include phase information (eg, +/- Δθ [phase shift] and/or θ(t) [phase modulation]) and/or frequency. Message (for example, +/- Δf [frequency shift] and / or f (t) [frequency modulation]). In another embodiment and/or in a refinement of the above-described embodiments, the inbound RF signal includes an amplitude message (eg, +/- ΔA [amplitude shift] and/or A(t) [amplitude modulation]). In order to recover the amplitude information, the receiver portion includes an amplitude detector such as an envelope detector, a low pass filter, and the like.

The baseband processing module 14 is based on one or more wireless communication standards (eg, GSM, CDMA, WCDMA, HSUPA, HSDPA, WiMAX, EDGE, GPRS, IEEE 802.11, Bluetooth, ZigBee, Universal Mobile Telecommunications System (UMTS), Long Term Evolution (LTE), IEEE 802.16, Evolution Data Optimization (EV-DO), etc. convert one or more inbound symbol streams into inbound Data (eg, sound, text, audio, video, graphics, etc.). Such conversion may include one or more of the following: digital intermediate frequency to fundamental frequency conversion, time domain to frequency domain conversion, space-time block decoding, space-frequency block decoding, demodulation, frequency extension decoding, frequency hopping decoding. Beamforming decoding, plex demapping, deinterleaving, decoding, puncturing, and/or descrambling. It should be noted that the baseband processing module converts a single inbound symbol stream into inbound data for single-input single-output (SISO) communication and/or multi-input single-output (MISO) communication, and multiple inbounds The symbol stream is converted to inbound data for single-input multiple-output (SIMO) communication and/or multiple-input multiple-output (MIMO) communication.

2 is a schematic block diagram of one embodiment of a communication device 10, 12 including a baseband processing module 14, a transmitter portion 16, a receiver portion 18, and a front end module or circuit 20. The front end module 20 includes an antenna 22, an antenna interface 28, a low noise amplifier (LNA) 24, and a power amplifier or power amplifier driver (PA) 26. The antenna interface 28 includes an antenna tuning unit 32 and a receiver transmitter isolation circuit 30. It is to be noted that the radio front end 20 may further include one to all elements of the receiver portion 18 and/or may further include one to all elements of the transmitter portion 16.

In one example of operation, power amplifier 26 amplifies one or more outbound RF signals it receives from transmitter portion 16. Receiver Transmitter (RX-TX) isolation circuit 30 (which may be a duplexer, circulator, or transformer balun or other device that uses the same antenna to provide isolation between the TX signal and the RX signal) Attenuate the outbound RF signal. The RX-TX isolation module 30 can adjust the attenuation of the outbound RF signal (ie, the TX signal) based on the control signal 34 received from the baseband processing unit 14. For example, when the transmission power is relatively low, the RX-TX isolation module 30 can be adjusted to reduce the attenuation of its TX signal. The RX-TX isolation module 30 provides the attenuated outbound RF signal to the antenna tuning unit 32.

An antenna tuning unit (ATU) 32 is tuned to provide substantially matching antenna 22 The desired impedance is matched. Because of the tuning, the ATU 32 provides the attenuated TX signal from the RX-TX isolation module 30 to the antenna 22 for transmission. It is noted that the ATU 32 can be adjusted continuously or periodically to track changes in the impedance of the antenna 22. For example, the baseband processing unit 14 can detect the impedance change of the antenna 22 and provide a control signal 34 to the ATU 32 based on the detected change such that it changes its impedance accordingly.

The outbound signal it receives from the ATU 32 can be transmitted by the antenna 22 of the various implementations as described with reference to one or any of Figures 3 through 35. Antenna 22 also receives one or more inbound RF signals provided to ATU 32. The ATU 32 provides the inbound RF signal to the RX-TX isolation module 30, which routes the signal to the LNA 24 with minimal attenuation. The LNA 24 amplifies the inbound RF signal and provides the amplified inbound RF signal to the receiver portion 18.

In an alternative embodiment, the radio front end 20 includes a transmit antenna 22 and a receive antenna 22. In this embodiment, the antenna interface 28 can include two antenna tuning units and omitting the RX-TX isolation circuit. Thus, isolation is provided between the outbound RF signal and the inbound RF signal via separate antennas to the transmitter portion 16 and the receiver portion 18 and separate paths.

FIG. 3 is a diagram of one embodiment of a substrate 40 supporting an antenna 22 and an inductor 42. The substrate 40 includes a first region 44 having a high magnetic permeability (μ) and a second region 46 having a high dielectric constant (ε). Substrate 40 can be an integrated circuit (IC) wafer, an IC package substrate, a printed circuit board, and/or portions thereof. The base material (ie, substrate material) of the substrate 40 can be, but is not limited to, one or more of silicon germanium, porous alumina, germanium single crystal, and gallium arsenide.

As is well known, magnetic permeability is used to measure the ability of a substrate to withstand a magnetic field (ie, the degree of magnetization obtained by the substrate in response to the magnetic field and corresponds to the ease with which the substrate can withstand the magnetic field). Moreover, it is well known that the dielectric constant is used to measure how an electric field affects the substrate and how it is affected by the substrate (ie, it is used to measure the electric field (or flux) generated per unit charge within the substrate and can support the electric field or electrical flux with the substrate. Easy amount The degree corresponds). It should be noted that when the substrate has a high dielectric constant, there is more electric current in the substrate.

In this case, the inductor 42 can be a printed inductor fabricated on a substrate within the first region 44, and the antenna 22 can be a printed antenna fabricated on a substrate within the second region 46. Antenna 22 and inductor 42 can be printed on a substrate within one or more metal layers using conventional printed circuit fabrication processes, such as etching or deposition. The inductor 42 is located within the first region 44 having a high magnetic permeability (e.g., the ability to withstand the increase in magnetic field). Therefore, when the inductor is used, the magnetic field generated by it is enhanced by the magnetic permeability of the first region, which improves the quality factor (Q) of the inductor (ie, the ratio between the reactance and the resistance, wherein the higher the Q The closer the inductor is to the ideal inductor). Again, a high Q inductor on the substrate is implemented.

Antenna 22 is located in a second region 46 having a high dielectric constant (e.g., the ability to withstand an electric field). Thus, when the antenna 22 is in use, the electric field it generates is enhanced by the dielectric constant of the second region 46, which increases the gain and/or impedance of the antenna 22 and can further advantageously affect the radiation pattern, beam of the antenna. Width and / or polarization.

In the application of the circuit, the inductor 42 can be part of the RX-TX isolation circuit 30, the antenna tuning unit 32, the power amplifier 26, or the low noise amplifier 24 of the front end module 20. Moreover, the first region can support a plurality of inductors incorporated within the front end module. Moreover, the second region can support a plurality of antennas 22 that function as antenna arrays, diversity antennas, and the like.

4 is a diagram of another embodiment of a substrate 40 supporting an antenna 22 and an inductor 42. In this embodiment, the first region 44 includes a non-magnetic metal polyol inclusion 48 embedded within the substrate material of the substrate 40. The non-magnetic metal dielectric inclusions 48 exhibit resonant (high) effective permeability values over a desired frequency range (eg, within the operating range of the inductor).

The second region 46 includes high dielectric constant metal dielectric inclusions embedded in the substrate 50. The high dielectric constant metal dielectric inclusion 50 can be a porous germanium wherein the substrate loss can be compared to the dielectric and the germanium is no longer a semiconductor. The high dielectric constant metal dielectric inclusions enable the second region to have a high (resonant) dielectric constant over a particular frequency range, which allows the antenna 22 to be relatively small compared to similarly operated antennas fabricated on conventional substrates. It is noted that the size, shape and/or distribution of the inclusions 50 in the first region 44 and the inclusions 50 in the second region 46 can be varied to provide the desired magnetic permeability and/or desired dielectric. constant.

5 is a diagram of another embodiment of a substrate 40 supporting an antenna 22 and an inductor 42 and further including a metamorphic layer 60 (described in more detail in FIGS. 30-32). Substrate 40 includes non-magnetic metal dielectric inclusions 48 within first region 44 and high dielectric constant metal dielectric inclusions 50 within second region 46.

The structural change layer 60 includes one or more first variable impedance circuits 62 associated with the first region 44 and one or more second variable impedance circuits 62 associated with the second region 46 (examples of variable impedance circuits are This will be described in more detail in Figures 32 through 35). The first variable impedance circuit 62 is operable to tune the magnetic permeability of the first region 44 to tune the performance of the inductor 42 (eg, quality factor, inductance, resistance, reactance, etc.). The second variable impedance circuit is operable to tune the dielectric constant of the second region 46 to tune performance (eg, gain, impedance, radiation mode, polarization, beam width, etc.).

6 is a diagram of another embodiment of a substrate 40 supporting an antenna 22 and an inductor 42 and further including a projected artificial magnetic mirror (PAMM) 70 (more details in FIGS. 7 and 8) Describe). The PAMM 70 generates an artificial magnetic conductor (AMC) at a distance above the surface of the semiconductor substrate, which affects the inductor 42 and/or the antenna 22. For example, the AMC can have a parabolic shape to serve as a dish for the antenna, which is discussed in more detail in FIG. As another example, the AMC can affect the magnetic field of the inductor to tune the performance of the inductor. 7 is a diagram of one embodiment of a tunable projected artificial magnetic mirror (PAMM) 70 that includes a plurality of artificial magnetic mirror (AMM) units 72 or arrays of artificial magnetic mirror elements. In one embodiment, each AMM unit 72 includes a conductive element (eg, a metal trace on one layer of the substrate) that is substantially the same shape, substantially the same pattern, and substantially the same size as in other units. The shape may be circular, square, rectangular, hexagonal, octagonal, elliptical, etc., and the pattern may be a spiral coil, a pattern with interconnected branches, an n-th order Peano curve, an n-th order Hilbert curve Wait. In another embodiment, the conductive elements can have different shapes, sizes, and/or patterns.

Within the AMM unit, the conductive elements can be coupled to the ground plane 76 by one or more connectors 74 (eg, vias). Alternatively, the conductive elements of the AMM unit can be capacitively coupled to the ground plane 76 (eg, without vias). Although not shown in the figures, the conductive elements of the AMM unit are coupled to the impedance elements of the AMM unit, as will be further discussed with reference to one or more of the subsequent figures.

The plurality of conductive elements of the AMM unit are arranged in an array (eg, as shown, 3 x 5). The array can have different sizes and shapes. For example, the array can be a square of n x n conductive elements, where n is 2 or more. As another example, the array can be a series of concentric rings of increased size and number of conductive elements. As yet another example, the array can be triangular, hexagonal, octagonal, or the like.

FIG. 8 is a schematic block diagram of one embodiment of an artificial magnetic mirror (AMM) unit 80 of a plurality of AMM units 72. AMM unit 80 includes a conductive element 82 and an impedance element 84, which may be fixed or variable. The conductive element is composed of a conductive material (for example, a metal such as copper, gold, aluminum) and has a certain shape (for example, a spiral coil, a pattern having interconnected branches, an n-th order Peano curve, an n-th order Hilbert curve, etc.) to A lumped resistor-inductor-capacitor (RLC) circuit is formed (see the examples discussed in Figures 32-33).

The impedance element 84 is coupled to the conductive element 82. The impedance of the impedance element 84 and the impedance of the RLC circuit determine the electromagnetic performance of the AMM unit over a given frequency range (ratio For example, radiation mode, polarization, gain, scattered signal phase, scattered signal amplitude, gain, etc., which contribute to the size, shape, orientation, and/or distance of the AMC. An example of a variable impedance element will be discussed in more detail with reference to Figures 34-35.

9 is a diagram of an antenna 22 having a substrate 40 and a projected artificial magnetic mirror (PAMM) 70 that produces a projected artificial magnetic conductor (AMC) 94 at a distance (d) above its surface. The shape of the projection AMC 94 is based on the characteristics of the artificial magnetic mirror (AMM) unit of the PAMM 70, which can be adjusted via the control message 92 generated by the control module 90. In this example, the projected AMC 94 is a parabolic shape of y = ax ² . Control module 90 generates control message 92 to tune the "a" term of the parabolic shape to change the parabolic shape of AMC 94. It is to be noted that the antenna 22 is located at the focus of the parabola. Substrate 40 can include substrate inclusions (eg, non-magnetic metal dielectric inclusions and/or high dielectric constant metal dielectric inclusions), and can further include structural changes that support one or more variable impedance circuits The layer has a tuned and/or adjustable magnetic permeability and/or dielectric constant region.

FIG. 10 is a diagram of one embodiment of a substrate 40 supporting a varactor, an antenna 22, and an inductor 42. The varactor includes two capacitive plates 100 that are placed on the main surface of the substrate 40 and form a capacitor. In this region of the substrate 40, the dielectric constant is adjustable (e.g., via a PAMM or via a structure to change a variable impedance circuit within the layer). It is well known that the capacitance of a capacitor is a function of the physical dimensions of the capacitor plates, the distance between the plates, and the dielectric constant of the dielectric layer separating the plates. Also, by adjusting the dielectric constant of the substrate, the capacitance of the capacitor changes to function as a varactor.

In the application of the circuit, the inductor 42 and/or the varactor may be part of the RX-TX isolation circuit 30, the antenna tuning unit 32, the power amplifier 26, or the low noise amplifier 24 of the front end module 20. Moreover, the first region can support a plurality of varactors incorporated into the front end module. Moreover, the second region can support a plurality of antennas 22 that function as antenna arrays, diversity antennas, and the like.

11 is a diagram of one embodiment of a substrate 40 supporting a circuit 104, an antenna 22, and an inductor 42. The circuit 104 is supported on the substrate with high magnetic permeability and/or high Within the region of dielectric constant 106. As an example, if the operation of circuit 104 is based on a magnetic field, the area supporting the circuit can have a high magnetic permeability. As another example, if the operation of circuit 104 is based on an electric field, the region supporting the circuit can have a high dielectric constant.

In various implementations, circuit 104 can be a resistor, a transistor, a capacitor, an inductor, a diode, a duplexer, an antenna duplexer, a load of a power amplifier, and/or a phase shifter. In these embodiments, the region can be divided into a plurality of sub-regions, wherein one of the sub-regions has a high magnetic permeability to support the magnetic field-based component in the circuit and the other sub-region has a high dielectric Constant to support electric field based components in the circuit.

FIG. 12 is a diagram of one embodiment of a metal dielectric cell array 110 for use as a radio frequency (RF) switch. The cell array 110 can be implemented on the substrate 40 and/or on the structural change layer 60. In either case, as shown in FIG. 13, metal dielectric unit 112 includes an impedance element 116 and a conductive element 114 that forms a lumped resistor-inductor-capacitor (RLC) circuit. The impedance of the impedance element 116 and the impedance of the RLC circuit 114 determine the electromagnetic performance of the unit to allow for the same signal to pass within a given frequency range. An example of metal dielectric unit 112 will be discussed in greater detail with respect to Figures 32-35.

In one example of operation, some of the metal dielectric units are tuned to control electromagnetic signals 118 and/or 120 through a plurality of metal dielectric units via different paths to effectively provide radio frequency (RF) switches. For example, the RF signal 118 can be an outbound RF signal, and the RF signal 120 can be an inbound RF signal; both signals have a specific protocol and therefore have a particular frequency band. Thus, a certain setting of the unit is tuned to allow the RF signal 118 to flow through the unit while the unit around a certain setting is tuned to block the RF signal 118. Similarly, a certain setting of the unit is tuned to allow the RF signal 120 to flow through the units while the unit surrounding the certain setting is tuned to block the RF signal 120.

In a multimode communication device, if another protocol with a different frequency band is used, The certain settings of the unit can then be changed to control the RF signals 118 and 120 along different paths. Thus, when tuning, these units provide an efficient RF switch with a large number of applications in RF communications.

14 is a diagram of one embodiment of an antenna 22 (eg, a Fabry-Perot antenna) that includes a programmable frequency selective surface (FSS) 130, a high impedance surface 132, and an antenna source 134. The programmable FSS 130 is at a distance (d) from the high impedance surface 132 and is substantially parallel thereto.

In one example of operation, antenna source 134 radiates electromagnetic signals 136 that are reflected from high impedance surface 132 and radiate through programmable frequency selective surface 130. The programmable FSS 130 includes a plurality of slits that are arranged in a grid of rows and columns, arranged in a linear or some pattern thereof. The slits may be physical holes that pass through or partially through the programmable FSS 130, and/or may generate electromagnetic holes by controlling the electromagnetic properties of the antenna, the programmable FSS, the high impedance surface 132, and/or the antenna source 134. For example, one or more electromagnetic characteristics of the programmable frequency selective surface 130 (electric field, magnetic field, impedance, radiation pattern, polarization, gain, scattered signal phase, scattered signal amplitude, gain, dielectric constant, magnetic permeability, conductivity, etc.) The tuned to affect the effective size, shape, and position of at least some of the slits to adjust the radiation pattern, operating band, gain, impedance, beam scan, and/or beam width of the antenna.

The antenna source 134 can be a dipole antenna and its position can be effectively varied by changing the performance of the support substrate. For example, by changing the effective position of the antenna source 134, the electromagnetic signal changes from the high impedance surface, thereby changing the operation of the antenna 22.

15 is a diagram of one embodiment of a programmable frequency selective surface (FSS) 130 of the antenna of FIG. 14 or FIG. 16, including a substrate 40, a structural change layer 60, a slit 138, and one or more Variable impedance circuit 62. Substrate 40 has substrate contents 135 (eg, non-magnetic metal dielectric inclusions and/or high dielectric constant metal dielectric inclusions) embedded therein to provide a desired substrate dielectric constant for programmable FSS 130 , magnetic permeability and conductivity characteristics.

16 is a diagram of another embodiment of an antenna 22 (eg, a Fabry-Perot antenna) including a dielectric cover 140, a programmable frequency selective surface (FSS) 130, a high impedance surface 132, and Antenna source 134. Dielectric cap layer 140 can include one or more dielectric layers, which can be solid layers and/or include vias to provide an electromagnetic band gap.

17 is a diagram of one embodiment of a high impedance surface 132 of the antenna of FIG. 14 or FIG. 16, including a substrate 40 and a ground plane 142. Substrate 40 has a surface that is substantially parallel to and at a distance from programmable frequency selective surface 130 and includes substrate inclusions 135 embedded therein (eg, non-magnetic metal dielectric inclusions and/or high dielectric constants) The metal dielectric inclusions) provide the desired substrate dielectric constant, magnetic permeability, and conductivity characteristics for the high impedance surface 132.

18 is a diagram of one embodiment of a programmable antenna 22 that includes a substrate 40, a metal inclusion 150 embedded in the region of the substrate 40, a bidirectional coupling circuit (BCC) 156, and a control module 152. It is to be noted that the substrate 40 may be an integrated circuit (IC) wafer having one of germanium, porous alumina, germanium single crystal, and gallium arsenide material, including an IC of at least one of a non-conductive material and a semiconductor material. A package substrate, and/or a printed circuit board (PCB) substrate including at least one of a PCB non-conductive material and a PCB semiconductor material.

A bidirectional coupling circuit (BCC) 156 is physically distributed within the region and physically adjacent to the metal inclusions 150. As shown, the circle can include from one hundred to several hundred metal inclusions 150 of the same size, different sizes, the same shape, different shapes, uniform spacing, and/or random spacing. It is to be noted that one or more dimensions of the metal inclusions are a fraction of the wavelength of the signal transmitted or received by the antenna.

In one example of operation, control module 152 generates control signals 154 to enable a set of bidirectional coupling circuits 156 (eg, bidirectional switches, transistors, amplifiers, etc.). The control module 152 transmits the control signals 154 to the bidirectional coupling circuit 156 via a trace grid, which may be located on one or more layers of the substrate. By arranging the set of bidirectional coupling circuits to be usable, a set of metal inclusions 150 are interconnected to be in the region A conductive region is provided therein, wherein the conductive region provides an antenna 22.

19 is a diagram of an example of operation of programmable antenna 22 in which control module 152 generates control signals 154 to enable a set of bidirectional coupling circuits 156 (eg, BCC with gray shading). By providing the set of bidirectional coupling circuits as available, a set of metal inclusions 150 (e.g., inclusions with shades of gray) are interconnected to provide a conductive region within the region. In this example, the conductive region provides a dipole antenna 22.

To provide antenna 22 connectivity, an antenna coupling circuit 158 (such as antenna interface 28 of FIG. 2) is included. Antenna coupling circuit 158 is coupled to one or more of the available BCCs via control signal 154.

20 is a diagram of another embodiment of a programmable antenna 22 that includes a substrate 40, a metal inclusion 150 embedded in the region of the substrate 40, a bidirectional current amplifier (BCA) 162, and a control module 152. The BCA 162 is physically distributed within the region and physically adjacent to the metal inclusions 150. As shown, the circle can include one hundred or hundreds of metal inclusions 150 of the same size, different sizes, the same shape, different shapes, uniform spacing, and/or random spacing. It is to be noted that one or more dimensions of the metal inclusions are a fraction of the wavelength of the signal transmitted or received by the antenna.

In one example of operation, control module 152 generates control signals 154 to activate a set of bidirectional current amplifiers 162. The control module 152 transmits the control signal 154 to the bidirectional current amplifier 162 via a trace grid, which may be located on one or more layers of the substrate. By providing the set of bidirectional current amplifiers as available, they interconnect a set of metal inclusions 150 to provide a conductive region within the region, wherein the conductive region provides the antenna 22.

21 is a diagram of another example of operation of programmable antenna 22 including substrate 40, metal inclusions 150 embedded in the region of substrate 40, bidirectional coupling circuit (BCC) 156, and control module 152. In this figure, the enabled BCC generates an electric field 164 that surrounds several metal inclusions 150. The electric field electrically couples the metal inclusions 150 within the field to create a conductive region of the region that provides a portion of the antenna. The disabled BCC does not generate an electric field and, therefore, the metal inclusions in these zones are not electrically coupled together. Again, these areas remain as semiconductors or dielectrics.

22 is a diagram of one embodiment of a substrate 40 supporting electronic circuits 174-178, such as capacitors, resistors, inductors, transistors, diodes, antennas, and/or combinations thereof. The substrate 40 (eg, tantalum, porous alumina, tantalum single crystal, and/or gallium arsenide) includes a first region 170 having a first dielectric constant, magnetic permeability, and conductivity characteristics and having a second dielectric constant, A second region 172 of magnetic permeability and conductivity characteristics. The first type of circuit 174 is supported within the first region and the second type of circuit 176 is supported within the second region 172. Other types of circuits 178 are supported in other areas of the substrate.

There are various examples for placing certain types of electronic circuits within certain areas of substrate 40 having tuned dielectric constant, magnetic permeability, and conductivity specificity. For example, in areas with high magnetic permeability, the quality factor of the inductor is enhanced. As another example, the characteristics of the antenna (e.g., gain, impedance, beam width, radiation mode, polarization, etc.) are enhanced in regions with high dielectric constants. As yet another example, when resistors or transistors are used in circuits operating in a given frequency band, it is desirable to enhance the capacitive elements of these elements and to suppress the inductive elements, and vice versa. In this particular example, placing a resistor or transistor in the high permeability region enhances the inductive component, while placing the resistor or transistor in the high dielectric constant region enhances the capacitive component.

23 is a diagram of another embodiment of a substrate 40 supporting electronic circuits 174-178. Substrate 40 further includes one or more other layers 180, which may be dielectric layers, insulating layers, and/or semiconductor layers. The one or more other layers 180 may include substrate inclusions (eg, non-magnetic metal dielectric inclusions and/or high dielectric constant metal dielectric inclusions) to provide a desired dielectric constant, magnetic Conductivity and conductivity characteristics (eg, high dielectric constant, high magnetic permeability, low dielectric constant, low magnetic permeability, etc.).

24 is a diagram of another embodiment of a substrate 40 having a plurality of substrate layers 182. One or more substrate layers 182 support the electronic circuit and have a dielectric constant, A region where magnetic permeability and conductivity characteristics are tunable. For example, the stacked substrate layer 182 can have overlapping regions (eg, first and second) for supporting the first type of electronic circuit 174 and the second type of electronic circuit 176.

25 is a diagram of another embodiment of a substrate 40 supporting electronic circuits 174-178. In this embodiment, within the first region 170, the semiconductor substrate includes a first embedded pattern of substrate inclusions (eg, metal inclusions and/or dielectric inclusions) to produce a first dielectric constant, Magnetic permeability, and conductivity characteristics. Moreover, within the second region 172, the semiconductor substrate includes a second embedded pattern of substrate inclusions to produce a second dielectric constant, magnetic permeability, and conductivity characteristics.

The first embedded pattern represents a first amount of substrate inclusions, a first pitch of substrate contents, and/or a first type of size of the substrate contents. The second embedded pattern represents a second amount of substrate inclusions, a second pitch of the substrate contents, and/or a second type of substrate inclusions. It is noted that the substrate contents can be non-magnetic metal dielectric inclusions, high dielectric constant metal dielectric inclusions, discrete RLC on-chip components, and printed metal in one or more layers of the substrate.

FIG. 26 is a diagram of another embodiment of a substrate 40 supporting electronic circuits 174-178. In this embodiment, the substrate 40 has a region 192 having a high effective magnetic permeability for supporting the first type of circuit 174 (eg, operating based on a magnetic field). Substrate 40 also includes a region 194 having a high dielectric constant for supporting a second type of circuit 176 (e.g., operation based on an electric field). The high magnetic permeability region 192 is created by including a metal dielectric structure 188 within the substrate. The high dielectric constant region 194 is created by including a porous germanium pattern 190 within the substrate.

FIG. 27 is a diagram of another embodiment of a substrate 40 supporting electronic circuits 174-178. In this embodiment, the substrate 40 includes a plurality of first regions 170 and a plurality of second regions 172. Each first region 170 supports one or more first type electronic circuits 174, and each second region 172 supports one or more second type electronic circuits 176.

28 is another embodiment of a substrate 40 supporting electronic circuits 174-178. Diagram of the style. In this embodiment, the substrate 40 includes a plurality of regions 170, 172, 200, and 202. The first region 170 supports one or more first type electronic circuits 174; the second region 172 supports one or more second type electronic circuits 176; the third region 200 supports one or more third type electronic circuits 204; The four regions 202 support one or more fourth type electronic circuits 206. It is to be noted that the third region 200 has a third dielectric constant, magnetic permeability, and conductivity characteristics, and the fourth region 202 has a fourth dielectric constant, magnetic permeability, and conductivity characteristics.

29 is a diagram of another embodiment of a programmable substrate including one or more substrates 40 and one or more structural change layers 60. The programmable substrate supports electronic circuitry 212 (eg, capacitors, resistors, inductors, transistors, diodes, antennas, and/or combinations thereof). Substrate 40 includes embedded substrate inclusions 213 (eg, non-magnetic metal dielectric inclusions, high dielectric constant metal dielectric inclusions, metal inclusions, bubbles, dielectrics within one or more layers of the substrate) Mass inclusions, discrete RLC on-chip components, and printed metal) to provide substrate dielectric constant, magnetic permeability, and conductivity characteristics. The structural change layer 60 includes one or more variable circuits 62 that modulate the dielectric constant, magnetic permeability, and conductivity characteristics of the region 210 of the substrate 40.

As an example, the substrate can be a porous alumina or other material (eg, substrate inclusions) having injected and randomly distributed bubbles, which can be hexagonal, cylindrical, spherical, and/or have other shapes. The size of the substrate contents can be controlled by a manufacturing process. The electromagnetic (EM) properties of the substrate depend on the EM properties of the substrate material as well as the shape, size and spacing of the substrate contents. The substrate contents can be designed in an ordered or randomly distributed array. Their shape, size and spacing control the bandwidth required for the desired material properties. Such performance can be altered by further including a variable impedance circuit within one or more of the structural change layers.

As may be used herein, a substrate is considered to be programmable or tunable if (a) in the process of fabricating the substrate, fabricating regions with ordered substrate contents and/or having disordered or random distribution The area of the substrate contents; (b) in the process of manufacturing the substrate, the manufacturing has different lateral dimensions and sizes and thus has different EM a region of performance; (c) an algorithm to control the design of the programmable substrate; (d) a substrate having a bias ferroelectric material for variable substrate EM properties (dielectric constant and/or magnetic permeability) within the substrate The substrate; and/or (e) the substrate includes a MEMS switch to locally achieve variable substrate EM performance.

Programmable or tuned substrate for supporting and tuning inductors, transformers, amplifiers, power drivers, filters, antennas, antenna arrays, CMOS devices, GaAS devices, transmission lines, vias, capacitors, transceivers, radio reception One or more of a device, a radio transmitter, and the like.

30 is a diagram of another embodiment of a programmable substrate including one or more substrates 40 that support electronic circuitry 212, one or more structural change layers 60, and control module 220. Substrate 40 includes embedded substrate contents 213 to provide substrate dielectric constant, magnetic permeability, and conductivity characteristics. The structural change layer 60 includes a ground plane 216 having an opening, and within the opening, includes one or more variable circuits 62 that include RLC elements 214 (eg, metal lines, traces, metal planes, Planar coil, spiral coil, etc.) and variable impedance 218.

Control module 220 provides control signals to one or more variable impedance circuits to tune the substrate dielectric constant, magnetic permeability, and conductivity characteristics to provide desired dielectric constant, magnetic permeability, and conductivity characteristics. It is to be noted that the spacing (S) between the circuits 62, the length (l) of the RLC element 214, and the distance (d) from the ground plane to the substrate 40 affect the electromagnetic properties of the programmable substrate. Moreover, it is noted that one end of the RLC element 214 is open.

31 is a diagram of another embodiment of a programmable substrate including one or more substrates 40 that support electronic circuitry 212, one or more structural change layers 60, and control module 220. Substrate 40 includes embedded substrate contents 213 to provide substrate dielectric constant, magnetic permeability, and conductivity characteristics. The structural change layer 60 includes a ground plane 216 having an opening and includes one or more variable circuits 62 within the opening, the variable circuit including RLC elements 214 (eg, metal lines, traces, metal planes, planes) Coils, spiral coils, etc.) and variable impedance 218. To be careful of, One end of the RLC element 214 is coupled to the ground plane and the other end is coupled to the corresponding variable impedance 218.

32 is a circuit schematic block diagram of one embodiment of an AMM cell, a metal dielectric cell, or a variable impedance circuit, wherein the conductive elements are represented by a lumped RLC circuit 230. In this example, impedance element 232 is a variable impedance circuit coupled in series with RLC circuit 230. It is noted that in an alternative embodiment, the impedance element 232 can be a fixed impedance circuit.

33 is a circuit schematic block diagram of one embodiment of an AMM cell, a metal dielectric cell, or a variable impedance circuit, wherein the conductive elements are represented by a lumped RLC circuit 230. In this example, impedance element 232 is a variable impedance circuit coupled in parallel with RLC circuit 230. It is noted that in an alternative embodiment, the impedance element 232 can be a fixed impedance circuit.

Figure 34 is a circuit schematic block diagram of one embodiment of a variable impedance element 232 of an AMM cell, metal dielectric cell or variable impedance circuit used as a negative resistor. The negative resistor includes an operational amplifier, a pair of resistors, and a passive component impedance circuit (Z), which may include resistors, capacitors, and/or inductors.

35 is a circuit schematic block diagram of another embodiment of a variable impedance element 232 used as an AMM unit, a metal dielectric unit, or a variable impedance circuit of a varactor. The varactor includes a transistor and a capacitor. The gate of the transistor is driven by the gate voltage (Vgate) and the connection of the transistor to the capacitor is driven by the tuning voltage (Vtune). As an alternative embodiment of the variable impedance element 232, passive components (such as resistors, capacitors, and/or inductors) can be implemented, wherein at least the passive components are adjustable.

As used herein, the terms "substantially" and "about" provide industrially acceptable tolerances and/or relatives between the various terms. Such industrially acceptable tolerances range from less than 1% to 50% and correspond to, but are not limited to, component values, integrated circuit processing variations, temperature variations, rise and fall times, and/or thermal noise. The relative range between the items ranges from a few percentage differences to large differences. do not. The term "operably coupled to", "coupled to", and/or "coupled", as used herein, includes the direct coupling between the items and/or the (For example, the items include, but are not limited to, components, components, circuits, and/or modules) indirectly coupled, wherein, for indirect coupling, the intermediate term does not modify the signal message, but can adjust its current level, voltage Level and / or power level. As used further herein, inferred coupling (ie, one component coupled with another component by inference) includes direct and indirect coupling between two items in the same manner as "coupled to." As further used herein, the term "operable to" or "operably coupled to" means that the item includes one or more power connections, inputs, outputs, etc., to enable one or more of its Corresponding functions, and may further include inferred coupling to one or more other items. As used further herein, the term "associated with" refers to a direct and/or indirect coupling of a single item and/or an item embedded within another item. As used herein, the term "advantageously compare" means that a comparison between two or more items, signals, etc., provides the desired relationship. For example, when the expected relationship is that the signal 1 has a larger amplitude than the signal 2, then an advantageous comparison can be obtained when the amplitude of the signal 1 is greater than the amplitude of the signal 2 or the amplitude of the signal 2 is smaller than the amplitude of the signal 1.

As used herein, the terms "processing module," "processing circuit," and/or "processing unit" may be a single processing device or multiple processing devices. Such processing devices can be microprocessors, microcontrollers, digital signal processors, microcomputers, central processing units, field programmable gate arrays, programmable logic devices, state machines, logic circuits, analog circuits, digital circuits, and/or Or any device that manipulates (analog or digital) signals based on hard-coded and/or operational instructions of the circuit. The processing module, module, processing circuit, and/or processing unit may be or further include a storage and/or integrated storage component, which may be a single storage device, multiple storage devices, and/or another processing module Embedded circuits of modules, processing circuits, and/or processing units. Such a storage device can be a read-only storage, a random access storage, a volatile storage, a non-volatile storage, a static storage, a dynamic storage, a flash storage, a high-speed storage. Any device that stores and/or stores digital messages. It should be noted that if the processing module, module, processing circuit, and/or processing unit includes more than one processing device, then centralized positioning (eg, directly coupled by wired and/or wireless bus structures) or distributed These processing devices are located (eg, indirectly coupled through a local area network and/or a wide area network for cloud computing). Moreover, it is noted that if the processing module, module, processing circuit, and/or processing unit performs one or more of its functions via a state machine, analog circuit, digital circuit, and/or logic circuit, then the corresponding operational command is stored. The storage and/or storage components can be embedded within or external to the circuitry including the state machine, analog circuitry, digital circuitry, and/or logic circuitry. It should still be noted that the memory component can store and process the modules, modules, processing circuitry, and/or processing units to execute hard-coded and/or operational instructions that are at least as shown in one or more of the figures. Some steps and / or functions correspond. Such a reservoir device or reservoir component can be included in the article.

The invention has been described above by means of method steps showing the performance of a particular function and its relationship. The boundaries and sequence of these functional components and method steps have been arbitrarily defined herein for the convenience of the description. Optional boundaries and sequences can be defined as long as specific functions and relationships are properly performed. Any such optional boundaries or sequences are therefore within the scope and spirit of the invention as claimed. Moreover, for convenience of description, the boundaries of these functional components have been arbitrarily defined as long as certain important functions are properly performed, and optional boundaries may be defined. Again, flowchart modules have been arbitrarily defined herein to illustrate some important functions. To the extent of some use, the boundaries and order of the flowchart modules can be additionally defined, and these boundaries and sequences still perform some important function. Such alternative definitions and sequences of functional components and flow diagram modules are therefore within the scope and spirit of the claimed invention. Those skilled in the art will also appreciate that the functional components and other exemplary blocks, modules, and components herein may be implemented as shown or may be implemented by discrete components, application specific integrated circuits, processors executing appropriate software, etc. or It is implemented in any combination.

In one or more embodiments, the present invention has also been described at least in part Bright. An embodiment of the invention is illustrated herein, an aspect of the invention, its features, its concepts, and/or examples thereof. Physical implementations of the devices, articles, machines, and/or processes embodying the invention may include one or more aspects, features, concepts, examples, etc. described with reference to one or more embodiments discussed herein. In addition, these embodiments may be combined with functions, steps, modules, etc., having the same or similar names, using the same or different reference numerals, which may be the same or similar functions, in accordance with all the figures. , steps, modules, etc., or different.

Although the transistors in the above figures are shown as field effect transistors (FETs), those skilled in the art will appreciate that the transistors can be implemented using any type of transistor structure, including but not Limited to bipolar, metal oxide semiconductor field effect transistors (MOSFETs), N-channel transistors, P-channel transistors, enhancement mode, depletion mode, and zero voltage threshold (VT) type transistors.

In any of the figures shown herein, the signals sent to the component, the signals from the components, and/or the signals between the components may be analog or digital, continuous time, or discrete time, unless explicitly stated to the contrary. And single-ended or differential signals. For example, if the signal path is shown as a single-ended path, then the signal path also represents a differential signal path. Similarly, if the signal path is shown as a differential path, then the signal path also represents a single-ended signal path. Those skilled in the art will recognize that although one or more specific structures are described herein, other structures may be utilized that use one or more data buses, direct connections between components, and / or indirect coupling between other components.

In the description of various embodiments of the invention, the term "module" is used. The modules include processing modules, functional blocks, hardware, and/or software stored on the storage for performing one or more of the functions described herein. It is to be noted that if the module is executed by hardware, the hardware can be operated separately and/or in combination with software and/or firmware. As used herein, a module can include one or more sub-modules, each of which can be one or more modules.

Although specific combinations of various functions and features of the present invention have been explicitly described herein, other combinations of these features and functions are also possible. The invention is not limited by the specific examples disclosed herein, and such other combinations are explicitly included.

22‧‧‧Antenna

40‧‧‧Substrate

42‧‧‧Inductors

44‧‧‧First area

46‧‧‧Second area

Claims (8)

A circuit comprising: a printed inductor; a printed antenna; a substrate supporting the printed inductor in a first region and supporting the printed antenna in a second region, wherein the first region is for increasing the inductance a magnetic field generated by the device, and the second region is for enhancing an electric field generated by the antenna; and a capacitor supported in the third region of the substrate, wherein the dielectric of the third region As the constant changes, the capacitance of the capacitor changes to provide a radio frequency (RF) varactor. The circuit of claim 1, further comprising: a first variable impedance circuit that tunes the magnetic permeability of the first region; and a second variable impedance circuit that tunes the dielectric of the second region constant. The circuit according to claim 1, further comprising: a projection artificial magnetic mirror (PAMM) for generating an artificial magnetic conductor (AMC) as an electromagnetic characteristic at a certain distance above the surface of the semiconductor substrate. The circuit of claim 3, wherein the PAMM further comprises: a plurality of artificial magnetic mirror (AMM) units, wherein one of the plurality of AMM units comprises: a conductive element, forming a set a total resistor-inductor-capacitor (RLC) circuit; and an impedance element coupled to the conductive element, wherein an impedance of the impedance element and an impedance of the RLC circuit determine a contribution to the AMC Electromagnetic performance of AMM units within a given frequency range. The circuit of claim 1, further comprising one of the following: a duplexer supported in a third region of the substrate; an antenna duplexer supported in the third region of the substrate; a load line of the power amplifier supported in the third region of the substrate; And a phase shifter supported in the third region of the substrate. The circuit of claim 1, further comprising: a plurality of metal dielectric units, wherein one of the plurality of metal dielectric units comprises: a conductive element forming a lumped resistor-inductor a capacitor (RLC) circuit; and an impedance element coupled to the conductive element, wherein an impedance of the impedance element and an impedance of the RLC circuit determine electromagnetic performance of the unit within a given frequency range; At least some of the plurality of metal dielectric units are tuned to control electromagnetic signals through the plurality of metal dielectric units via different paths to effectively provide radio frequency (RF) switches. An antenna circuit comprising: a substrate; an antenna on the substrate, wherein the antenna is located in a region of the substrate for enhancing an electric field generated by the antenna; and a projected artificial magnetic mirror (PAMM) is An artificial magnetic conductor (AMC) is generated at a distance above the surface of the substrate to promote a radiation pattern of the antenna; and a capacitor is supported in another region of the substrate, wherein a dielectric constant is constant with the other region Varying, the capacitance of the capacitor changes to provide a radio frequency (RF) varactor. The antenna circuit of claim 7, wherein the PAMM further comprises: a plurality of artificial magnetic mirror (AMM) units, wherein one of the plurality of AMM units comprises: a conductive element forming a lumped resistor-inductor-capacitor (RLC) circuit; and an impedance element coupled To the conductive element, wherein the impedance of the impedance element and the impedance of the RLC circuit determine an electromagnetic performance that contributes to the AMM unit within a given frequency range of the AMC.