TWI552225B - ＳｉＣＮ膜之形成方法及裝置 - Google Patents

ＳｉＣＮ膜之形成方法及裝置 Download PDF

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Publication number
TWI552225B
TWI552225B TW102129039A TW102129039A TWI552225B TW I552225 B TWI552225 B TW I552225B TW 102129039 A TW102129039 A TW 102129039A TW 102129039 A TW102129039 A TW 102129039A TW I552225 B TWI552225 B TW I552225B
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Taiwan
Prior art keywords
gas
process gas
supply
film
field
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TW102129039A
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English (en)
Chinese (zh)
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TW201347037A (zh
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周保華
長谷部一秀
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東京威力科創股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW102129039A 2007-02-16 2008-02-14 ＳｉＣＮ膜之形成方法及裝置 TWI552225B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007037112 2007-02-16
JP2008001689A JP4924437B2 (ja) 2007-02-16 2008-01-08 成膜方法及び成膜装置

Publications (2)

Publication Number Publication Date
TW201347037A TW201347037A (zh) 2013-11-16
TWI552225B true TWI552225B (zh) 2016-10-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW102129039A TWI552225B (zh) 2007-02-16 2008-02-14 ＳｉＣＮ膜之形成方法及裝置
TW097105244A TW200845208A (en) 2007-02-16 2008-02-14 SiCN film formation method and apparatus

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW097105244A TW200845208A (en) 2007-02-16 2008-02-14 SiCN film formation method and apparatus

Country Status (4)

Country Link
JP (2) JP4924437B2 (ja)
KR (2) KR20080076828A (ja)
CN (1) CN101252087B (ja)
TW (2) TWI552225B (ja)

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JP5384291B2 (ja) 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP2010147139A (ja) * 2008-12-17 2010-07-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5421736B2 (ja) * 2009-11-13 2014-02-19 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、及びプログラム
US8409352B2 (en) 2010-03-01 2013-04-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
JP5651451B2 (ja) * 2010-03-16 2015-01-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
KR101366002B1 (ko) 2010-04-09 2014-02-21 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
JP5841222B2 (ja) * 2010-04-12 2016-01-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP5654862B2 (ja) * 2010-04-12 2015-01-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP5572447B2 (ja) 2010-05-25 2014-08-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP5545061B2 (ja) 2010-06-18 2014-07-09 東京エレクトロン株式会社 処理装置及び成膜方法
JP2012015344A (ja) * 2010-07-01 2012-01-19 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP5689398B2 (ja) * 2010-12-21 2015-03-25 東京エレクトロン株式会社 窒化シリコン膜の成膜方法及び成膜装置
JP5847566B2 (ja) 2011-01-14 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6151335B2 (ja) * 2011-01-14 2017-06-21 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2012128044A1 (ja) * 2011-03-23 2012-09-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5699980B2 (ja) * 2011-06-16 2015-04-15 東京エレクトロン株式会社 成膜方法及び成膜装置
CN102881631B (zh) * 2011-07-13 2014-12-17 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN102881632B (zh) * 2011-07-13 2014-12-17 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN102891101B (zh) * 2011-07-18 2015-05-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
WO2013027549A1 (ja) 2011-08-25 2013-02-28 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および記録媒体
JPWO2013054655A1 (ja) * 2011-10-14 2015-03-30 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および記録媒体
JP5758829B2 (ja) 2012-03-27 2015-08-05 東京エレクトロン株式会社 ボロン含有シリコン酸炭窒化膜の形成方法およびシリコン酸炭窒化膜の形成方法
JP6047039B2 (ja) * 2012-04-20 2016-12-21 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6022274B2 (ja) * 2012-09-18 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6024484B2 (ja) * 2013-01-29 2016-11-16 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6035166B2 (ja) * 2013-02-26 2016-11-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP5446022B2 (ja) * 2013-03-06 2014-03-19 国立大学法人東北大学 光電変換部材
JP5847783B2 (ja) * 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
JP6246558B2 (ja) * 2013-10-29 2017-12-13 東京エレクトロン株式会社 シリコン酸炭窒化物膜、シリコン酸炭化物膜、シリコン酸窒化物膜の成膜方法および成膜装置
JP6315699B2 (ja) * 2014-03-17 2018-04-25 東京エレクトロン株式会社 炭窒化チタン膜を形成する方法
KR101764959B1 (ko) 2014-03-21 2017-08-03 주식회사 엘지화학 고속 원자층 증착 장치 및 이를 이용한 증착 방법
JP6340251B2 (ja) * 2014-05-30 2018-06-06 東京エレクトロン株式会社 ＳｉＣＮ膜の成膜方法
JP6176811B2 (ja) 2014-06-25 2017-08-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9685325B2 (en) * 2014-07-19 2017-06-20 Applied Materials, Inc. Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD
JP6345136B2 (ja) * 2015-03-06 2018-06-20 東京エレクトロン株式会社 炭素含有シリコン窒化物膜の成膜方法および成膜装置
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JP2016034043A (ja) * 2015-11-25 2016-03-10 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
CN111868894B (zh) * 2018-04-24 2024-12-20 株式会社国际电气 半导体装置的制造方法、基板处理方法、基板处理装置及存储介质
JP7203670B2 (ja) * 2019-04-01 2023-01-13 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7227122B2 (ja) 2019-12-27 2023-02-21 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7072012B2 (ja) 2020-02-27 2022-05-19 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、及びプログラム
JP2021172841A (ja) * 2020-04-22 2021-11-01 東京エレクトロン株式会社 成膜方法
KR102853083B1 (ko) * 2020-09-23 2025-09-02 삼성전자주식회사 에어 갭을 포함하는 반도체 소자 제조 방법
JP2025181095A (ja) 2024-05-31 2025-12-11 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置

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US20060286817A1 (en) * 2003-05-26 2006-12-21 Hitoshi Kato Cvd method for forming silicon nitride film

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US20060286817A1 (en) * 2003-05-26 2006-12-21 Hitoshi Kato Cvd method for forming silicon nitride film
US20050155551A1 (en) * 2004-01-19 2005-07-21 Byoung-Jae Bae Deposition apparatus and related methods including a pulse fluid supplier having a buffer

Also Published As

Publication number Publication date
KR20130064766A (ko) 2013-06-18
JP2008227460A (ja) 2008-09-25
KR101314002B1 (ko) 2013-10-01
JP5287964B2 (ja) 2013-09-11
CN101252087B (zh) 2013-01-02
CN101252087A (zh) 2008-08-27
JP4924437B2 (ja) 2012-04-25
JP2012023399A (ja) 2012-02-02
KR20080076828A (ko) 2008-08-20
TW201347037A (zh) 2013-11-16
TW200845208A (en) 2008-11-16

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