TWI557787B - 薄加熱基板支撐件 - Google Patents

薄加熱基板支撐件 Download PDF

Info

Publication number
TWI557787B
TWI557787B TW101106557A TW101106557A TWI557787B TW I557787 B TWI557787 B TW I557787B TW 101106557 A TW101106557 A TW 101106557A TW 101106557 A TW101106557 A TW 101106557A TW I557787 B TWI557787 B TW I557787B
Authority
TW
Taiwan
Prior art keywords
heating plate
substrate support
support assembly
cantilever
heating
Prior art date
Application number
TW101106557A
Other languages
English (en)
Chinese (zh)
Other versions
TW201241899A (en
Inventor
尤瑟夫以馬德
紗麗訥絲馬丁傑夫
魯特保羅Ｂ
包爾阿尼魯德哈
李傑瑞阿瑪
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201241899A publication Critical patent/TW201241899A/zh
Application granted granted Critical
Publication of TWI557787B publication Critical patent/TWI557787B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
TW101106557A 2011-03-01 2012-02-29 薄加熱基板支撐件 TWI557787B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161448018P 2011-03-01 2011-03-01

Publications (2)

Publication Number Publication Date
TW201241899A TW201241899A (en) 2012-10-16
TWI557787B true TWI557787B (zh) 2016-11-11

Family

ID=46758420

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101106557A TWI557787B (zh) 2011-03-01 2012-02-29 薄加熱基板支撐件

Country Status (6)

Country Link
US (2) US20130334199A1 (fr)
JP (1) JP6104823B2 (fr)
KR (1) KR101970184B1 (fr)
CN (1) CN103403857B (fr)
TW (1) TWI557787B (fr)
WO (1) WO2012118606A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012148568A1 (fr) 2011-03-01 2012-11-01 Applied Materials, Inc. Procédé et appareil de transfert de substrat et confinement radical
US20130334199A1 (en) 2011-03-01 2013-12-19 Applied Materials, Inc. Thin heated substrate support
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
US11171008B2 (en) * 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
US9464732B2 (en) 2012-04-26 2016-10-11 Applied Materials, Inc. Apparatus for uniform pumping within a substrate process chamber
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
JP2014072510A (ja) * 2012-10-02 2014-04-21 Disco Abrasive Syst Ltd チャックテーブル
TWM644795U (zh) * 2013-03-15 2023-08-11 美商瓦特隆電子製造公司 使用在半導體處理室內的裝置
CN104600000A (zh) * 2013-10-30 2015-05-06 沈阳芯源微电子设备有限公司 一种基板周边吸附烘烤结构
JP6581602B2 (ja) * 2014-02-06 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計
US10032601B2 (en) 2014-02-21 2018-07-24 Varian Semiconductor Equipment Associates, Inc. Platen support structure
CN105431924B (zh) 2014-04-09 2020-11-17 应用材料公司 用于解决具有改良的流动均匀性/气体传导性的可变的处理容积的对称腔室主体设计架构
US9378992B2 (en) * 2014-06-27 2016-06-28 Axcelis Technologies, Inc. High throughput heated ion implantation system and method
JP6195029B1 (ja) * 2016-07-20 2017-09-13 Toto株式会社 静電チャック
US10903066B2 (en) * 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber
US10704142B2 (en) * 2017-07-27 2020-07-07 Applied Materials, Inc. Quick disconnect resistance temperature detector assembly for rotating pedestal
CN107622943A (zh) * 2017-10-13 2018-01-23 德淮半导体有限公司 半导体刻蚀机台
KR102347144B1 (ko) * 2017-10-16 2022-01-03 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드 락 구성에서의 고온 가열식 지지 페데스탈
WO2020024859A1 (fr) * 2018-08-01 2020-02-06 北京北方华创微电子装备有限公司 Chambre de réaction et dispositif de traitement au plasma
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
KR20200021818A (ko) * 2018-08-21 2020-03-02 세메스 주식회사 가열 플레이트, 이를 구비하는 기판 열처리 장치 및 가열 플레이트의 제조 방법
JP7594852B2 (ja) * 2018-10-11 2024-12-05 日本発條株式会社 ステージ、成膜装置、および膜加工装置
KR102773262B1 (ko) * 2018-10-11 2025-02-28 닛폰 하츠죠 가부시키가이샤 스테이지, 성막 장치 및 막 가공 장치
WO2020086122A1 (fr) 2018-10-24 2020-04-30 Applied Materials, Inc. Conceptions de support de substrat pour une chambre de dépôt
WO2020236235A1 (fr) * 2019-05-22 2020-11-26 Applied Materials, Inc. Kit de support de dispositif de chauffage pour chambre de gravure en biseau
KR102559551B1 (ko) * 2021-03-11 2023-07-27 주식회사 한국제이텍트써모시스템 열처리 오븐의 히터 유닛
CN113745135B (zh) * 2021-11-04 2022-03-22 北京北方华创微电子装备有限公司 工艺腔室

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
US5753891A (en) * 1994-08-31 1998-05-19 Tokyo Electron Limited Treatment apparatus
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US7045014B2 (en) * 2003-04-24 2006-05-16 Applied Materials, Inc. Substrate support assembly
US20090179365A1 (en) * 2008-01-15 2009-07-16 Lerner Alexander N High temperature vacuum chuck assembly
TW201102455A (en) * 2004-02-26 2011-01-16 Applied Materials Inc In-situ dry clean chamber for front end of line fabrication

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139051A (en) * 1976-09-07 1979-02-13 Rockwell International Corporation Method and apparatus for thermally stabilizing workpieces
JPS62242441A (ja) 1986-04-15 1987-10-23 Nec Corp パケツト交換方式
JPH0770297B2 (ja) * 1986-05-20 1995-07-31 東京エレクトロン株式会社 イオン注入装置におけるウエハ保持装置
JPH05228873A (ja) * 1992-02-21 1993-09-07 Sony Corp 真空チャック
KR100238626B1 (ko) * 1992-07-28 2000-02-01 히가시 데쓰로 플라즈마 처리장치
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
JP3352418B2 (ja) * 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
US6466426B1 (en) * 1999-08-03 2002-10-15 Applied Materials Inc. Method and apparatus for thermal control of a semiconductor substrate
JP2004319540A (ja) * 2003-04-11 2004-11-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法およびドライエッチング装置
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
JP5080043B2 (ja) * 2006-08-31 2012-11-21 新電元工業株式会社 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置
JP4927623B2 (ja) * 2007-03-30 2012-05-09 東京エレクトロン株式会社 ロードロック装置の昇圧方法
US20090031955A1 (en) 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
US8440048B2 (en) * 2009-01-28 2013-05-14 Asm America, Inc. Load lock having secondary isolation chamber
US20130334199A1 (en) 2011-03-01 2013-12-19 Applied Materials, Inc. Thin heated substrate support

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5753891A (en) * 1994-08-31 1998-05-19 Tokyo Electron Limited Treatment apparatus
US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US7045014B2 (en) * 2003-04-24 2006-05-16 Applied Materials, Inc. Substrate support assembly
TW201102455A (en) * 2004-02-26 2011-01-16 Applied Materials Inc In-situ dry clean chamber for front end of line fabrication
US20090179365A1 (en) * 2008-01-15 2009-07-16 Lerner Alexander N High temperature vacuum chuck assembly

Also Published As

Publication number Publication date
TW201241899A (en) 2012-10-16
KR101970184B1 (ko) 2019-04-18
JP2014509782A (ja) 2014-04-21
US20170040192A1 (en) 2017-02-09
KR20140012679A (ko) 2014-02-03
WO2012118606A3 (fr) 2012-10-26
US10204805B2 (en) 2019-02-12
WO2012118606A2 (fr) 2012-09-07
JP6104823B2 (ja) 2017-03-29
CN103403857B (zh) 2016-04-13
CN103403857A (zh) 2013-11-20
US20130334199A1 (en) 2013-12-19

Similar Documents

Publication Publication Date Title
TWI557787B (zh) 薄加熱基板支撐件
KR101904146B1 (ko) 기판 이송 및 라디칼 구속을 위한 방법 및 장치
TWI665328B (zh) 用於電漿處理的多區域基座
CN1945807B (zh) 控制衬底温度的装置
CN104995726B (zh) 多区加热器中的温度测量
JP4450106B1 (ja) 載置台構造及び処理装置
US7436645B2 (en) Method and apparatus for controlling temperature of a substrate
CN104377155B (zh) 静电卡盘以及等离子体加工设备
US20090159566A1 (en) Method and apparatus for controlling temperature of a substrate
TW201518538A (zh) 像素化冷卻溫度控制的基板支撐組件
TW201351559A (zh) 具有即時熱區調節能力的高溫靜電夾具
KR102347144B1 (ko) 듀얼 로드 락 구성에서의 고온 가열식 지지 페데스탈
CN110603630B (zh) 用于旋转基座的快速断接电阻温度检测器组件
KR101220307B1 (ko) 서셉터 및 이를 구비하는 기판 처리 장치
JP2006173531A (ja) 基板処理装置