TWI562190B - - Google Patents

Info

Publication number
TWI562190B
TWI562190B TW104124838A TW104124838A TWI562190B TW I562190 B TWI562190 B TW I562190B TW 104124838 A TW104124838 A TW 104124838A TW 104124838 A TW104124838 A TW 104124838A TW I562190 B TWI562190 B TW I562190B
Authority
TW
Taiwan
Application number
TW104124838A
Other languages
Chinese (zh)
Other versions
TW201705183A (zh
Inventor
Jia-Fu Chen
si-lun Huang
guo-feng Qiu
ren-bin Shi
You-Zhe Cai
Ding-Gui Lian
cheng-yang Lian
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW104124838A priority Critical patent/TW201705183A/zh
Application granted granted Critical
Publication of TWI562190B publication Critical patent/TWI562190B/zh
Publication of TW201705183A publication Critical patent/TW201705183A/zh

Links

TW104124838A 2015-07-31 2015-07-31 超高頻電漿模擬裝置與超高頻電漿特性量測方法 TW201705183A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW104124838A TW201705183A (zh) 2015-07-31 2015-07-31 超高頻電漿模擬裝置與超高頻電漿特性量測方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104124838A TW201705183A (zh) 2015-07-31 2015-07-31 超高頻電漿模擬裝置與超高頻電漿特性量測方法

Publications (2)

Publication Number Publication Date
TWI562190B true TWI562190B (de) 2016-12-11
TW201705183A TW201705183A (zh) 2017-02-01

Family

ID=58227337

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104124838A TW201705183A (zh) 2015-07-31 2015-07-31 超高頻電漿模擬裝置與超高頻電漿特性量測方法

Country Status (1)

Country Link
TW (1) TW201705183A (de)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
TWI342898B (en) * 2003-08-14 2011-06-01 Advanced Energy Ind Inc Sensor array for measuring plasma characteristics in plasma processing environments
TW201202685A (en) * 2003-04-24 2012-01-16 Tokyo Electron Ltd Method and apparatus for measuring electron density of plasma and plasma processing apparatus
TW201220392A (en) * 2010-10-05 2012-05-16 Skyworks Solutions Inc Apparatus and methods for electrical measurements in a plasma etcher
TWI466158B (zh) * 2009-07-03 2014-12-21 Univ Lunghwa Sci & Technology 電漿測量裝置、電漿系統及測量電漿特性之方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
TW201202685A (en) * 2003-04-24 2012-01-16 Tokyo Electron Ltd Method and apparatus for measuring electron density of plasma and plasma processing apparatus
TWI342898B (en) * 2003-08-14 2011-06-01 Advanced Energy Ind Inc Sensor array for measuring plasma characteristics in plasma processing environments
TWI466158B (zh) * 2009-07-03 2014-12-21 Univ Lunghwa Sci & Technology 電漿測量裝置、電漿系統及測量電漿特性之方法
TW201220392A (en) * 2010-10-05 2012-05-16 Skyworks Solutions Inc Apparatus and methods for electrical measurements in a plasma etcher

Also Published As

Publication number Publication date
TW201705183A (zh) 2017-02-01

Similar Documents

Publication Publication Date Title
BR112018002313A2 (de)
BR112017026075A2 (de)
TWI562190B (de)
BR0009349B1 (de)
CN303071819S (de)
CN303070995S (de)
CN303069222S (de)
CN303067934S (de)
CN303066654S (de)
CN303064561S (de)
BR9809862B1 (de)
BR8302639Y1 (de)
BR8301984Y1 (de)
CN303071257S (de)
BR0108864B1 (de)
BR0008874B1 (de)
BR0003401B1 (de)
BR0009994B1 (de)
BR0009942B1 (de)
BR0009761B1 (de)
BR0009757B1 (de)
BR0009717B1 (de)
BR0009649B1 (de)
BR0009373B1 (de)
BR0107990B1 (de)