TWI563108B - 分散有C粒子之Fe-Pt-Ag-C系濺鍍靶及其製造方法 - Google Patents

分散有C粒子之Fe-Pt-Ag-C系濺鍍靶及其製造方法

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Publication number
TWI563108B
TWI563108B TW102113251A TW102113251A TWI563108B TW I563108 B TWI563108 B TW I563108B TW 102113251 A TW102113251 A TW 102113251A TW 102113251 A TW102113251 A TW 102113251A TW I563108 B TWI563108 B TW I563108B
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TW
Taiwan
Prior art keywords
sputtering target
manufacturing
powder
sintered
number satisfying
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TW102113251A
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English (en)
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TW201402850A (zh
Inventor
佐藤敦
高見英生
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Jx日鑛日石金屬股份有限公司
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Application filed by Jx日鑛日石金屬股份有限公司 filed Critical Jx日鑛日石金屬股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • H01J37/3429Plural materials
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C33/00Making ferrous alloys
    • C22C33/02Making ferrous alloys by powder metallurgy
    • C22C33/0257Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements
    • C22C33/0278Making ferrous alloys by powder metallurgy characterised by the range of the alloying elements with at least one alloying element having a minimum content above 5%
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/002Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/007Ferrous alloys, e.g. steel alloys containing silver
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/04Alloys based on a platinum group metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00Metallic composition of the powder or its coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2302/00Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
    • B22F2302/40Carbon, graphite
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10Sintering only
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C2202/00Physical properties
    • C22C2202/02Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)

Abstract

一種燒結體濺鍍靶,其係以原子數比計具有(Fe100-X-PtX)100-Y-Z-AgY-CZ(其中,X為滿足35≦X≦55的數,Y為滿足0.5≦Y≦15的數,Z為滿足15≦Z≦55的數)之組成的Fe-Pt-Ag-C系燒結體濺鍍靶,相對密度在93%以上。一種Fe-Pt-Ag-C系燒結體濺鍍靶之製造方法,用以製造Fe-Pt-Ag-C系濺鍍靶,其特徵在於:預先製作Fe-Pt-C燒結體,將其加以粉碎製成粉碎粉末,將該粉碎粉末與Ag粉末混合,以未達Ag熔點的溫度進行燒結。課題為提供一種可在不使用昂貴的共濺鍍裝置下製作粒狀結構磁性薄膜,並且減少濺鍍時所產生之顆粒量的高密度濺鍍靶。
TW102113251A 2012-05-22 2013-04-15 分散有C粒子之Fe-Pt-Ag-C系濺鍍靶及其製造方法 TWI563108B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012116813 2012-05-22
JPJP2012-116813 2012-05-22

Publications (2)

Publication Number Publication Date
TW201402850A TW201402850A (zh) 2014-01-16
TWI563108B true TWI563108B (zh) 2016-12-21

Family

ID=49623587

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102113251A TWI563108B (zh) 2012-05-22 2013-04-15 分散有C粒子之Fe-Pt-Ag-C系濺鍍靶及其製造方法

Country Status (7)

Country Link
US (1) US20140360871A1 (zh)
JP (1) JP5705993B2 (zh)
CN (1) CN104169458B (zh)
MY (1) MY167671A (zh)
SG (1) SG11201403264SA (zh)
TW (1) TWI563108B (zh)
WO (1) WO2013175884A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103081009B (zh) 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt型强磁性材料溅射靶
MY164370A (en) 2010-12-20 2017-12-15 Jx Nippon Mining & Metals Corp Fe-pt-based sputtering target with dispersed c grains
MY154754A (en) 2011-03-30 2015-07-15 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film
MY166492A (en) 2012-07-20 2018-06-27 Jx Nippon Mining & Metals Corp Sputtering target for forming magnetic recording film and process for producing same
JP2014034730A (ja) * 2012-08-10 2014-02-24 Mitsui Mining & Smelting Co Ltd 焼結体およびスパッタリングターゲット
US10600440B2 (en) 2014-09-22 2020-03-24 Jx Nippon Mining & Metals Corporation Sputtering target for forming magnetic recording film and method for producing same
WO2016052380A1 (ja) * 2014-09-30 2016-04-07 Jx金属株式会社 タングステンスパッタリングターゲット及びその製造方法
JP5999161B2 (ja) * 2014-10-08 2016-09-28 三菱マテリアル株式会社 W−Tiスパッタリングターゲット
JP6437427B2 (ja) * 2015-03-04 2018-12-12 Jx金属株式会社 磁気記録媒体用スパッタリングターゲット
CN108699677B (zh) 2016-02-19 2020-12-04 捷客斯金属株式会社 磁记录介质用溅射靶以及磁性薄膜

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007623A (en) * 1997-08-29 1999-12-28 International Business Machines Corporation Method for making horizontal magnetic recording media having grains of chemically-ordered FePt or CoPt
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
US20040247945A1 (en) * 2003-06-03 2004-12-09 Seagate Technology Llc Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4175829B2 (ja) * 2002-04-22 2008-11-05 株式会社東芝 記録媒体用スパッタリングターゲットと磁気記録媒体
KR100470151B1 (ko) * 2002-10-29 2005-02-05 한국과학기술원 FePtC 박막을 이용한 고밀도 자기기록매체 및 그제조방법
MY146996A (en) * 2009-03-03 2012-10-15 Jx Nippon Mining & Metals Corp Sputtering target and process for producing same
CN101717922A (zh) * 2009-12-23 2010-06-02 天津大学 掺氮细化薄膜中有序化面心四方结构铁铂颗粒尺寸的方法
JP5459494B2 (ja) * 2010-03-28 2014-04-02 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
WO2012073882A1 (ja) * 2010-11-29 2012-06-07 三井金属鉱業株式会社 スパッタリングターゲット
JP5041262B2 (ja) * 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
MY154754A (en) * 2011-03-30 2015-07-15 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film
JP5912559B2 (ja) * 2011-03-30 2016-04-27 田中貴金属工業株式会社 FePt−C系スパッタリングターゲットの製造方法
JP5301751B1 (ja) * 2011-09-26 2013-09-25 Jx日鉱日石金属株式会社 Fe−Pt−C系スパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007623A (en) * 1997-08-29 1999-12-28 International Business Machines Corporation Method for making horizontal magnetic recording media having grains of chemically-ordered FePt or CoPt
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
US20040247945A1 (en) * 2003-06-03 2004-12-09 Seagate Technology Llc Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same

Also Published As

Publication number Publication date
CN104169458B (zh) 2017-02-22
CN104169458A (zh) 2014-11-26
US20140360871A1 (en) 2014-12-11
MY167671A (en) 2018-09-21
JPWO2013175884A1 (ja) 2016-01-12
JP5705993B2 (ja) 2015-04-22
WO2013175884A1 (ja) 2013-11-28
TW201402850A (zh) 2014-01-16
SG11201403264SA (en) 2014-09-26

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