TWI602825B - 調整高級矽烷的選擇性的方法及利用它的高級矽烷生成方法 - Google Patents

調整高級矽烷的選擇性的方法及利用它的高級矽烷生成方法 Download PDF

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Publication number: TWI602825B
Authority: TW; Taiwan
Prior art keywords: decane; thermal decomposition; propane; raw material; selectivity
Prior art date: 2015-07-27

Application number

TW105123804A

Other languages

English (en)

Chinese (zh)

Other versions

TW201712021A (zh

Inventor

宋泳河

權三奉

金性洙

Original Assignee

Ｓｋ材料股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-07-27

Filing date

2016-07-27

Publication date

2017-10-21

2016-07-27 Application filed by Ｓｋ材料股份有限公司 filed Critical Ｓｋ材料股份有限公司

2017-04-01 Publication of TW201712021A publication Critical patent/TW201712021A/zh

2017-10-21 Application granted granted Critical

2017-10-21 Publication of TWI602825B publication Critical patent/TWI602825B/zh

Links

238000000034 method Methods 0.000 title claims description 48
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title 2
229910000077 silane Inorganic materials 0.000 title 2
DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 429
ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 112
238000005979 thermal decomposition reaction Methods 0.000 claims description 83
239000002994 raw material Substances 0.000 claims description 74
239000001294 propane Substances 0.000 claims description 56
239000007789 gas Substances 0.000 claims description 49
239000000203 mixture Substances 0.000 claims description 33
239000002245 particle Substances 0.000 claims description 32
239000007787 solid Substances 0.000 claims description 31
OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 17
239000000463 material Substances 0.000 claims description 15
238000002156 mixing Methods 0.000 claims description 14
239000003085 diluting agent Substances 0.000 claims description 11
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
239000001257 hydrogen Substances 0.000 claims description 5
229910052739 hydrogen Inorganic materials 0.000 claims description 5
229910052786 argon Inorganic materials 0.000 claims description 3
238000001816 cooling Methods 0.000 claims description 3
229910052757 nitrogen Inorganic materials 0.000 claims description 3
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 39
239000001273 butane Substances 0.000 description 33
IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 33
238000006243 chemical reaction Methods 0.000 description 24
239000000047 product Substances 0.000 description 24
238000000926 separation method Methods 0.000 description 22
VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 9
239000004065 semiconductor Substances 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 8
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
238000002360 preparation method Methods 0.000 description 7
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
238000009835 boiling Methods 0.000 description 6
230000000052 comparative effect Effects 0.000 description 6
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 4
125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
238000002474 experimental method Methods 0.000 description 4
QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 4
125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 4
229910052707 ruthenium Inorganic materials 0.000 description 4
IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 3
239000006227 byproduct Substances 0.000 description 3
238000000354 decomposition reaction Methods 0.000 description 3
238000009826 distribution Methods 0.000 description 3
238000011049 filling Methods 0.000 description 3
-1 lithium aluminum hydride Chemical compound 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
238000004064 recycling Methods 0.000 description 3
YMEKHGLPEFBQCR-UHFFFAOYSA-N 2,2,3,3,5,5-hexachloro-1,4-dioxane Chemical compound ClC1(OC(C(OC1)(Cl)Cl)(Cl)Cl)Cl YMEKHGLPEFBQCR-UHFFFAOYSA-N 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
239000007864 aqueous solution Substances 0.000 description 2
239000003638 chemical reducing agent Substances 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 2
230000008021 deposition Effects 0.000 description 2
238000010790 dilution Methods 0.000 description 2
239000012895 dilution Substances 0.000 description 2
239000001307 helium Substances 0.000 description 2
229910052734 helium Inorganic materials 0.000 description 2
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
229960003105 metformin Drugs 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
XDRYMKDFEDOLFX-UHFFFAOYSA-N pentamidine Chemical compound C1=CC(C(=N)N)=CC=C1OCCCCCOC1=CC=C(C(N)=N)C=C1 XDRYMKDFEDOLFX-UHFFFAOYSA-N 0.000 description 2
229960004448 pentamidine Drugs 0.000 description 2
230000000704 physical effect Effects 0.000 description 2
239000002243 precursor Substances 0.000 description 2
238000007670 refining Methods 0.000 description 2
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
229910010082 LiAlH Inorganic materials 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
150000001785 cerium compounds Chemical class 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
239000012467 final product Substances 0.000 description 1
238000007429 general method Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
230000007062 hydrolysis Effects 0.000 description 1
238000006460 hydrolysis reaction Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
239000012280 lithium aluminium hydride Substances 0.000 description 1
239000002070 nanowire Substances 0.000 description 1
239000011148 porous material Substances 0.000 description 1
239000000376 reactant Substances 0.000 description 1
230000008929 regeneration Effects 0.000 description 1
238000011069 regeneration method Methods 0.000 description 1
230000002441 reversible effect Effects 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
239000002904 solvent Substances 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
239000007921 spray Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
239000007858 starting material Substances 0.000 description 1
238000003860 storage Methods 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
ZTBJFXYWWZPTFM-UHFFFAOYSA-N tellanylidenemagnesium Chemical compound [Te]=[Mg] ZTBJFXYWWZPTFM-UHFFFAOYSA-N 0.000 description 1
AKYUXYJGXHZKLL-UHFFFAOYSA-N triethoxy(triethoxysilyl)silane Chemical compound CCO[Si](OCC)(OCC)[Si](OCC)(OCC)OCC AKYUXYJGXHZKLL-UHFFFAOYSA-N 0.000 description 1
238000005406 washing Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

TW105123804A 2015-07-27 2016-07-27 調整高級矽烷的選擇性的方法及利用它的高級矽烷生成方法 TWI602825B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1020150106024A KR101733051B1 (ko)	2015-07-27	2015-07-27	고차실란의 선택도 조절방법 및 이를 이용한 고차실란의 생성방법

Publications (2)

Publication Number	Publication Date
TW201712021A TW201712021A (zh)	2017-04-01
TWI602825B true TWI602825B (zh)	2017-10-21

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ID=57884728

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Application Number	Title	Priority Date	Filing Date
TW105123804A TWI602825B (zh)	2015-07-27	2016-07-27	調整高級矽烷的選擇性的方法及利用它的高級矽烷生成方法

Country Status (3)

Country	Link
KR (1)	KR101733051B1 (fr)
TW (1)	TWI602825B (fr)
WO (1)	WO2017018772A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US11230474B2 (en) *	2018-10-11	2022-01-25	L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude	Process for producing isomer enriched higher silanes
US11401166B2 (en) *	2018-10-11	2022-08-02	L'Air Liaquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude	Process for producing isomer enriched higher silanes
TWI800690B (zh) *	2019-10-25	2023-05-01	台灣特品化學股份有限公司	一種高純度正矽丁烷的純化方法
CN110980738B (zh) *	2019-12-04	2021-07-27	中国化学赛鼎宁波工程有限公司	一种硅烷热解法制备乙硅烷和丙硅烷的系统及其方法
DE102020211833A1 (de)	2020-09-22	2022-03-24	Evonik Operations Gmbh	Verfahren zur Herstellung oligomerer Hydridosilane aus SiH4
CN114314596B (zh) *	2021-12-01	2024-01-19	全椒亚格泰电子新材料科技有限公司	利用微波加热固定床连续合成高阶硅烷的方法及系统

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JP2719211B2 (ja) *	1989-12-13	1998-02-25	昭和電工株式会社	高次シランの製造法
US6027705A (en) *	1998-01-08	2000-02-22	Showa Denko K.K.	Method for producing a higher silane
US20060222583A1 (en) *	2005-04-05	2006-10-05	Bruce Hazeltine	System and method for making Si2H6 and higher silanes
TWI477447B (zh) *	2012-06-13	2015-03-21	Oci Materials Co Ltd	透過單矽烷之熱裂解製造二矽烷之方法及裝置

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JPH11260729A (ja) *	1998-01-08	1999-09-24	Showa Denko Kk	高次シランの製造法
JP5604044B2 (ja) *	2009-01-09	2014-10-08	独立行政法人科学技術振興機構	高次シラン組成物および膜付基板の製造方法

2015
- 2015-07-27 KR KR1020150106024A patent/KR101733051B1/ko active Active
2016
- 2016-07-26 WO PCT/KR2016/008141 patent/WO2017018772A1/fr not_active Ceased
- 2016-07-27 TW TW105123804A patent/TWI602825B/zh active

Patent Citations (4)

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Publication number	Priority date	Publication date	Assignee	Title
JP2719211B2 (ja) *	1989-12-13	1998-02-25	昭和電工株式会社	高次シランの製造法
US6027705A (en) *	1998-01-08	2000-02-22	Showa Denko K.K.	Method for producing a higher silane
US20060222583A1 (en) *	2005-04-05	2006-10-05	Bruce Hazeltine	System and method for making Si2H6 and higher silanes
TWI477447B (zh) *	2012-06-13	2015-03-21	Oci Materials Co Ltd	透過單矽烷之熱裂解製造二矽烷之方法及裝置

Also Published As

Publication number	Publication date
WO2017018772A1 (fr)	2017-02-02
KR20170013076A (ko)	2017-02-06
TW201712021A (zh)	2017-04-01
KR101733051B1 (ko)	2017-05-08

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