TWI612696B - 發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法 - Google Patents

發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法 Download PDF

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Publication number
TWI612696B
TWI612696B TW105114215A TW105114215A TWI612696B TW I612696 B TWI612696 B TW I612696B TW 105114215 A TW105114215 A TW 105114215A TW 105114215 A TW105114215 A TW 105114215A TW I612696 B TWI612696 B TW I612696B
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TW
Taiwan
Prior art keywords
metal
layer
conductive layer
dielectric
led
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Application number
TW105114215A
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English (en)
Chinese (zh)
Other versions
TW201631810A (zh
Inventor
雷吉普
Jipu Lei
廣興 亨利 蔡
Kwong-Hin Henry CHOY
魏亞軍
Yajun Wei
史帝法諾 史恰非諾
Stefano Schiaffino
丹尼爾 亞歷山卓 史帝格沃
Daniel Alexander Steigerwald
Original Assignee
皇家飛利浦電子股份有限公司
Koninklijke Philips Electronics N.V.
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Publication of TW201631810A publication Critical patent/TW201631810A/zh
Application granted granted Critical
Publication of TWI612696B publication Critical patent/TWI612696B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW105114215A 2011-03-14 2012-03-13 發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法 TWI612696B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161452181P 2011-03-14 2011-03-14
US61/452,181 2011-03-14

Publications (2)

Publication Number Publication Date
TW201631810A TW201631810A (zh) 2016-09-01
TWI612696B true TWI612696B (zh) 2018-01-21

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW105114215A TWI612696B (zh) 2011-03-14 2012-03-13 發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法
TW106136319A TWI683457B (zh) 2011-03-14 2012-03-13 發光二極體(led)結構及形成覆晶led結構之方法
TW101108520A TW201301562A (zh) 2011-03-14 2012-03-13 具有再分配用於覆晶安裝的垂直接觸件的發光二極體

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106136319A TWI683457B (zh) 2011-03-14 2012-03-13 發光二極體(led)結構及形成覆晶led結構之方法
TW101108520A TW201301562A (zh) 2011-03-14 2012-03-13 具有再分配用於覆晶安裝的垂直接觸件的發光二極體

Country Status (7)

Country Link
US (3) US9246061B2 (2)
EP (1) EP2686892B1 (2)
JP (1) JP5932851B2 (2)
KR (1) KR101933001B1 (2)
CN (2) CN106058028B (2)
TW (3) TWI612696B (2)
WO (1) WO2012123840A1 (2)

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TWI548124B (zh) * 2013-05-27 2016-09-01 崴發控股有限公司 覆晶式發光二極體元件及其封裝結構
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102222861B1 (ko) * 2013-07-18 2021-03-04 루미리즈 홀딩 비.브이. 고반사성 플립칩 led 다이
WO2015074880A1 (en) * 2013-11-19 2015-05-28 Koninklijke Philips N.V. A solid state light emitting device and method of manufacturing a solid state light emitting device
WO2015165048A1 (zh) * 2014-04-29 2015-11-05 陈振贤 一种结合led外延结构与led封装基板为一体的垂直式led阵列元件
US9343633B1 (en) 2014-10-31 2016-05-17 Mikro Mesa Technology Co., Ltd. Light-emitting diode lighting device
US9865772B2 (en) * 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9601659B2 (en) * 2015-01-06 2017-03-21 Apple Inc. LED structures for reduced non-radiative sidewall recombination
CN107258022B (zh) * 2015-03-16 2019-09-24 首尔伟傲世有限公司 包括金属块的发光元件
DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
US10898725B2 (en) 2018-11-26 2021-01-26 International Business Machines Corporation Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes
CN113594321B (zh) * 2021-04-05 2023-12-01 常州纵慧芯光半导体科技有限公司 一种半导体光源及其驱动电路

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US20100078656A1 (en) * 2008-09-30 2010-04-01 Seoul Opto Device Co., Ltd. Light emitting device and method of fabricating the same
US20120181568A1 (en) * 2011-01-13 2012-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Micro-interconnects for light-emitting diodes

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Also Published As

Publication number Publication date
JP5932851B2 (ja) 2016-06-08
TW201301562A (zh) 2013-01-01
EP2686892B1 (en) 2019-10-02
WO2012123840A1 (en) 2012-09-20
CN103415935A (zh) 2013-11-27
JP2014508426A (ja) 2014-04-03
TW201631810A (zh) 2016-09-01
KR101933001B1 (ko) 2018-12-27
TWI683457B (zh) 2020-01-21
US20160126408A1 (en) 2016-05-05
KR20140013029A (ko) 2014-02-04
CN103415935B (zh) 2016-09-14
EP2686892A1 (en) 2014-01-22
CN106058028B (zh) 2019-03-29
TW201826576A (zh) 2018-07-16
US9246061B2 (en) 2016-01-26
US20130334563A1 (en) 2013-12-19
CN106058028A (zh) 2016-10-26
US20180019370A1 (en) 2018-01-18
US9722137B2 (en) 2017-08-01

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