TWI627508B - Ｅｕｖ微影用阻劑下層膜形成組成物 - Google Patents

Ｅｕｖ微影用阻劑下層膜形成組成物 Download PDF

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Publication number: TWI627508B
Authority: TW; Taiwan
Prior art keywords: group; carbon atoms; underlayer film; resist; forming composition
Prior art date: 2012-03-23

Application number

TW102109627A

Other languages

English (en)

Chinese (zh)

Other versions

TW201400987A (zh

Inventor

遠藤貴文

坂本力丸

藤谷徳昌

大西竜慈

何邦慶

Original Assignee

日產化學工業股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2012-03-23

Filing date

2013-03-19

Publication date

2018-06-21

2013-03-19 Application filed by 日產化學工業股份有限公司 filed Critical 日產化學工業股份有限公司

2014-01-01 Publication of TW201400987A publication Critical patent/TW201400987A/zh

2018-06-21 Application granted granted Critical

2018-06-21 Publication of TWI627508B publication Critical patent/TWI627508B/zh

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125000005843 halogen group Chemical group 0.000 claims abstract description 15
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229940114055 beta-resorcylic acid Drugs 0.000 description 1
ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
239000007795 chemical reaction product Substances 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
125000001309 chloro group Chemical group Cl* 0.000 description 1
TXWOGHSRPAYOML-UHFFFAOYSA-N cyclobutanecarboxylic acid Chemical compound OC(=O)C1CCC1 TXWOGHSRPAYOML-UHFFFAOYSA-N 0.000 description 1
125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
238000011161 development Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
229940116333 ethyl lactate Drugs 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
ZHUXMBYIONRQQX-UHFFFAOYSA-N hydroxidodioxidocarbon(.) Chemical class [O]C(O)=O ZHUXMBYIONRQQX-UHFFFAOYSA-N 0.000 description 1
125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
125000004464 hydroxyphenyl group Chemical group 0.000 description 1
238000005286 illumination Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
125000005647 linker group Chemical group 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
FZZQNEVOYIYFPF-UHFFFAOYSA-N naphthalene-1,6-diol Chemical compound OC1=CC=CC2=CC(O)=CC=C21 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 1
PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
229910000484 niobium oxide Inorganic materials 0.000 description 1
URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
QUBQYFYWUJJAAK-UHFFFAOYSA-N oxymethurea Chemical compound OCNC(=O)NCO QUBQYFYWUJJAAK-UHFFFAOYSA-N 0.000 description 1
YZERDTREOUSUHF-UHFFFAOYSA-N pentafluorobenzoic acid Chemical compound OC(=O)C1=C(F)C(F)=C(F)C(F)=C1F YZERDTREOUSUHF-UHFFFAOYSA-N 0.000 description 1
238000006552 photochemical reaction Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000001294 propane Substances 0.000 description 1
125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
150000004060 quinone imines Chemical group 0.000 description 1
239000002994 raw material Substances 0.000 description 1
230000004044 response Effects 0.000 description 1
230000004043 responsiveness Effects 0.000 description 1
229960001860 salicylate Drugs 0.000 description 1
YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
238000004626 scanning electron microscopy Methods 0.000 description 1
230000008313 sensitization Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000002904 solvent Substances 0.000 description 1
239000007858 starting material Substances 0.000 description 1
239000011975 tartaric acid Substances 0.000 description 1
235000002906 tartaric acid Nutrition 0.000 description 1
150000003568 thioethers Chemical class 0.000 description 1
ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
- C08G59/186—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents with acids
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Medicinal Chemistry (AREA)
Polymers & Plastics (AREA)
Organic Chemistry (AREA)
Health & Medical Sciences (AREA)
Architecture (AREA)
Structural Engineering (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Materials For Photolithography (AREA)
Epoxy Resins (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

TW102109627A 2012-03-23 2013-03-19 Ｅｕｖ微影用阻劑下層膜形成組成物 TWI627508B (zh)

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WO2022172917A1 (fr) *	2021-02-09	2022-08-18	日産化学株式会社	Composition pour former un film de sous-couche de réserve contenant un polymère qui a une chaîne latérale bloquée par un groupe aryle
WO2022244682A1 (fr)	2021-05-19	2022-11-24	Jsr株式会社	Procédé de fabrication de substrat semi-conducteur, et composition pour formation de film de sous-couche de réserve
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KR20240041932A (ko)	2021-08-10	2024-04-01	제이에스알 가부시끼가이샤	반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물
KR20240088880A (ko)	2021-10-19	2024-06-20	제이에스알 가부시끼가이샤	반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물
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Publication number	Publication date
WO2013141015A1 (fr)	2013-09-26
JP6083537B2 (ja)	2017-02-22
TW201400987A (zh)	2014-01-01
JPWO2013141015A1 (ja)	2015-08-03

Publication	Publication Date	Title
TWI627508B (zh)	2018-06-21	Ｅｕｖ微影用阻劑下層膜形成組成物
KR101805119B1 (ko)	2017-12-06	고밀착성 레지스트 하층막 형성용 조성물
US9250525B2 (en)	2016-02-02	Resist underlayer film-forming composition
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TWI531864B (zh)	2016-05-01	光阻下層膜形成組成物及使用其之光阻圖型之形成方法
CN103221888B (zh)	2016-06-29	抗蚀剂下层膜形成用组合物和使用了该组合物的抗蚀剂图案的形成方法
US20090317740A1 (en)	2009-12-24	Composition containing hydroxylated condensation resin for forming resist underlayer film
TW200906890A (en)	2009-02-16	Hardmask composition having antireflective properties and method of patterning material using the same
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TW200811602A (en)	2008-03-01	Antireflective composition for photoresists
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TW201527401A (zh)	2015-07-16	光阻下層膜形成組成物及使用其之光阻圖型之形成方法
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WO2018052028A1 (fr)	2018-03-22	Composé, résine, composition, et procédé de formation de motif
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