TWI673748B - 用於檢查基板的設備、用於檢查基板的方法 - Google Patents

用於檢查基板的設備、用於檢查基板的方法 Download PDF

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Publication number
TWI673748B
TWI673748B TW104139058A TW104139058A TWI673748B TW I673748 B TWI673748 B TW I673748B TW 104139058 A TW104139058 A TW 104139058A TW 104139058 A TW104139058 A TW 104139058A TW I673748 B TWI673748 B TW I673748B
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Taiwan
Prior art keywords
substrate
charged particle
particle beam
imaging
vacuum chamber
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TW104139058A
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English (en)
Chinese (zh)
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TW201626421A (zh
Inventor
博海德 穆勒
路維格 雷德
安賽爾 溫雷
利底亞 帕里索利
馬堤爾斯 布魯納
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美商應用材料股份有限公司
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/61—Specific applications or type of materials thin films, coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0216—Means for avoiding or correcting vibration effects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW104139058A 2014-12-22 2015-11-25 用於檢查基板的設備、用於檢查基板的方法 TWI673748B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/EP2014/079018 WO2016101978A1 (fr) 2014-12-22 2014-12-22 Appareil d'inspection de substrat, procédé d'inspection de substrat, appareil d'inspection de substrat étendu, et procédé de commande correspondant
??PCT/EP2014/079018 2014-12-22

Publications (2)

Publication Number Publication Date
TW201626421A TW201626421A (zh) 2016-07-16
TWI673748B true TWI673748B (zh) 2019-10-01

Family

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Family Applications (1)

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TW104139058A TWI673748B (zh) 2014-12-22 2015-11-25 用於檢查基板的設備、用於檢查基板的方法

Country Status (5)

Country Link
JP (1) JP6604704B2 (fr)
KR (1) KR20170101265A (fr)
CN (2) CN107110799A (fr)
TW (1) TWI673748B (fr)
WO (1) WO2016101978A1 (fr)

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KR102260984B1 (ko) * 2016-12-12 2021-06-03 어플라이드 머티어리얼스, 인코포레이티드 기판을 검사하기 위한 방법 및 명령들이 저장된 컴퓨터 판독가능 매체
US10345250B2 (en) * 2017-10-12 2019-07-09 Applied Materials, Inc. Method of inspecting a sample with a charged particle beam device, and charged particle beam device
WO2019081010A1 (fr) * 2017-10-25 2019-05-02 Applied Materials, Inc. Support destiné à être utilisé dans une chambre sous vide, système pour tester un agencement de transport dans une chambre sous vide, système de traitement sous vide et procédé pour tester un agencement de transport dans une chambre sous vide
US10731979B2 (en) * 2018-01-12 2020-08-04 Applied Materials Israel Ltd. Method for monitoring nanometric structures
CN110506236B (zh) * 2018-02-22 2021-12-03 应用材料公司 用于显示器制造的基板上的自动临界尺寸测量的方法、用于检查用于显示器制造的大面积基板的方法和设备和操作所述设备的方法
TWI697932B (zh) * 2018-03-22 2020-07-01 日商愛發科股份有限公司 離子槍
US10964522B2 (en) * 2018-06-06 2021-03-30 Kla Corporation High resolution electron energy analyzer
US11435257B2 (en) * 2018-07-27 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for monitoring vacuum valve closing condition in vacuum processing system
WO2020104031A1 (fr) * 2018-11-22 2020-05-28 Applied Materials, Inc. Procédé de mesure de dimensions critiques sur un substrat, et appareil destiné à inspecter et à découper un dispositif électronique sur le substrat
TWI910679B (zh) * 2019-08-30 2026-01-01 荷蘭商Ａｓｍｌ荷蘭公司 掃描電子顯微鏡及非暫時性電腦可讀媒體
US12142456B2 (en) 2019-08-30 2024-11-12 Asml Netherlands B.V. Self-differential confocal tilt sensor for measuring level variation in charged particle beam system
US10921268B1 (en) * 2019-09-09 2021-02-16 Fei Company Methods and devices for preparing sample for cryogenic electron microscopy
WO2022033661A1 (fr) * 2020-08-11 2022-02-17 Applied Materials, Inc. Procédé de mesure de l'examen des défauts sur un substrat, appareil d'imagerie d'un substrat, et procédé de fonctionnement de celui-ci
WO2026037599A1 (fr) 2024-08-14 2026-02-19 Carl Zeiss Smt Gmbh Architecture améliorée d'appareil d'inspection pour tomographie 3d
KR102963118B1 (ko) * 2025-06-12 2026-05-08 심정도 Ai기술을 활용한 반도체 검사 공정 사고 방지 시스템

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Publication number Priority date Publication date Assignee Title
JPS5967849U (ja) * 1982-10-29 1984-05-08 株式会社明石製作所 真空排気系の防振装置
JPH11265678A (ja) * 1998-01-12 1999-09-28 Shimadzu Corp 基板検査用高速電子線計測装置及び基板検査方法
US20020028399A1 (en) * 2000-06-27 2002-03-07 Mamoru Nakasuji Inspection system by charged particle beam and method of manufacturing devices using the system
JP2002248338A (ja) * 2001-02-23 2002-09-03 Hitachi Ltd 真空排気装置、粒子線装置、光線装置及びｘ線装置並びにそれらを用いた半導体集積回路装置の製造法
JP2014239050A (ja) * 2003-05-09 2014-12-18 株式会社荏原製作所 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
JP2005121645A (ja) * 2003-09-25 2005-05-12 Integrated Dynamics Engineering Gmbh 電子ビーム測定ツールのための振動絶縁方法および装置
TW200636232A (en) * 2005-02-17 2006-10-16 Ebara Corp Electron beam device
US20070221844A1 (en) * 2006-03-23 2007-09-27 Hiromasa Yamanashi Metrology System of Fine pattern for Process Control by Charged Particle Beam
JP2009289468A (ja) * 2008-05-27 2009-12-10 Hitachi High-Technologies Corp 荷電粒子線装置
JP2013528320A (ja) * 2010-05-26 2013-07-08 アプライド マテリアルズ インコーポレイテッド 静電放電（ｅｓｄ）の低減のための装置及び方法
JP2013191333A (ja) * 2012-03-13 2013-09-26 Hitachi High-Technologies Corp 荷電粒子線装置用防音カバー及び荷電粒子線装置

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Publication number Publication date
CN107110799A (zh) 2017-08-29
JP6604704B2 (ja) 2019-11-13
KR20170101265A (ko) 2017-09-05
JP2017535787A (ja) 2017-11-30
CN115901831A (zh) 2023-04-04
WO2016101978A1 (fr) 2016-06-30
TW201626421A (zh) 2016-07-16

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