TWI704243B - 圓筒形濺射靶件及其製造方法 - Google Patents

圓筒形濺射靶件及其製造方法 Download PDF

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Publication number: TWI704243B
Authority: TW; Taiwan
Prior art keywords: cylindrical; cylinder; sintered body; oxygen element; oxygen
Prior art date: 2016-03-28

Application number

TW109119026A

Other languages

English (en)

Chinese (zh)

Other versions

TW202035740A (zh

Inventor

館野諭

長田幸三

Original Assignee

日商Ｊｘ金屬股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-03-28

Filing date

2017-02-24

Publication date

2020-09-11

2017-02-24 Application filed by 日商Ｊｘ金屬股份有限公司 filed Critical 日商Ｊｘ金屬股份有限公司

2020-09-11 Application granted granted Critical

2020-09-11 Publication of TWI704243B publication Critical patent/TWI704243B/zh

2020-10-01 Publication of TW202035740A publication Critical patent/TW202035740A/zh

Links

238000005477 sputtering target Methods 0.000 title claims abstract description 52
238000004519 manufacturing process Methods 0.000 title abstract description 40
239000000463 material Substances 0.000 claims description 32
230000000007 visual effect Effects 0.000 claims 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 258
229910052760 oxygen Inorganic materials 0.000 abstract description 258
239000001301 oxygen Substances 0.000 abstract description 258
238000005245 sintering Methods 0.000 description 105
230000000052 comparative effect Effects 0.000 description 93
238000000034 method Methods 0.000 description 81
230000008569 process Effects 0.000 description 53
238000000465 moulding Methods 0.000 description 23
239000000523 sample Substances 0.000 description 23
239000013078 crystal Substances 0.000 description 21
239000002245 particle Substances 0.000 description 18
239000007787 solid Substances 0.000 description 18
239000007789 gas Substances 0.000 description 17
239000002994 raw material Substances 0.000 description 16
239000000843 powder Substances 0.000 description 15
238000000635 electron micrograph Methods 0.000 description 11
238000012986 modification Methods 0.000 description 10
230000004048 modification Effects 0.000 description 10
238000004544 sputter deposition Methods 0.000 description 10
230000001788 irregular Effects 0.000 description 9
238000005259 measurement Methods 0.000 description 9
239000000203 mixture Substances 0.000 description 9
229910052738 indium Inorganic materials 0.000 description 8
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
239000000758 substrate Substances 0.000 description 8
239000010409 thin film Substances 0.000 description 8
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
238000005219 brazing Methods 0.000 description 7
238000005469 granulation Methods 0.000 description 7
230000003179 granulation Effects 0.000 description 7
229910003437 indium oxide Inorganic materials 0.000 description 7
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
229910001887 tin oxide Inorganic materials 0.000 description 7
MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
238000005336 cracking Methods 0.000 description 6
238000002156 mixing Methods 0.000 description 6
229910006404 SnO 2 Inorganic materials 0.000 description 5
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
238000001816 cooling Methods 0.000 description 5
230000000694 effects Effects 0.000 description 5
238000011156 evaluation Methods 0.000 description 5
239000010408 film Substances 0.000 description 5
239000012535 impurity Substances 0.000 description 5
238000010298 pulverizing process Methods 0.000 description 5
229910052718 tin Inorganic materials 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
239000000470 constituent Substances 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
238000012423 maintenance Methods 0.000 description 4
239000011701 zinc Substances 0.000 description 4
238000007088 Archimedes method Methods 0.000 description 3
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
239000000956 alloy Substances 0.000 description 3
229910045601 alloy Inorganic materials 0.000 description 3
238000010586 diagram Methods 0.000 description 3
238000001035 drying Methods 0.000 description 3
230000005684 electric field Effects 0.000 description 3
239000011521 glass Substances 0.000 description 3
238000003754 machining Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
125000006850 spacer group Chemical group 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
239000011787 zinc oxide Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
238000004438 BET method Methods 0.000 description 2
229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
239000011324 bead Substances 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000011049 filling Methods 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
239000002184 metal Substances 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
238000005498 polishing Methods 0.000 description 2
239000011148 porous material Substances 0.000 description 2
238000002360 preparation method Methods 0.000 description 2
238000005070 sampling Methods 0.000 description 2
239000002002 slurry Substances 0.000 description 2
239000007921 spray Substances 0.000 description 2
230000003746 surface roughness Effects 0.000 description 2
239000010936 titanium Substances 0.000 description 2
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
239000004677 Nylon Substances 0.000 description 1
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
230000004323 axial length Effects 0.000 description 1
235000015895 biscuits Nutrition 0.000 description 1
229910002091 carbon monoxide Inorganic materials 0.000 description 1
238000005266 casting Methods 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
238000011161 development Methods 0.000 description 1
230000018109 developmental process Effects 0.000 description 1
229910001882 dioxygen Inorganic materials 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000000921 elemental analysis Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000003628 erosive effect Effects 0.000 description 1
239000010419 fine particle Substances 0.000 description 1
230000005484 gravity Effects 0.000 description 1
238000000227 grinding Methods 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
239000004615 ingredient Substances 0.000 description 1
238000001746 injection moulding Methods 0.000 description 1
238000009434 installation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000005304 joining Methods 0.000 description 1
229910052743 krypton Inorganic materials 0.000 description 1
DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
238000010907 mechanical stirring Methods 0.000 description 1
239000007769 metal material Substances 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
238000009768 microwave sintering Methods 0.000 description 1
239000011268 mixed slurry Substances 0.000 description 1
229920001778 nylon Polymers 0.000 description 1
230000008520 organization Effects 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000005453 pelletization Methods 0.000 description 1
230000035699 permeability Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
230000002250 progressing effect Effects 0.000 description 1
230000002035 prolonged effect Effects 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
238000010079 rubber tapping Methods 0.000 description 1
238000004062 sedimentation Methods 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000013077 target material Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6586—Processes characterised by the flow of gas

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Structural Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Physical Vapour Deposition (AREA)

TW109119026A 2016-03-28 2017-02-24 圓筒形濺射靶件及其製造方法 TWI704243B (zh)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP2016064132		2016-03-28
JP2016-064132		2016-03-28
JP2016214323A JP6397869B2 (ja)	2016-03-28	2016-11-01	円筒型スパッタリングターゲット及びその製造方法
JP2016-214323		2016-11-01

Publications (2)

Publication Number	Publication Date
TWI704243B true TWI704243B (zh)	2020-09-11
TW202035740A TW202035740A (zh)	2020-10-01

Family

ID=60004925

Family Applications (4)

Application Number	Title	Priority Date	Filing Date
TW109119026A TWI704243B (zh)	2016-03-28	2017-02-24	圓筒形濺射靶件及其製造方法
TW108132861A TWI698542B (zh)	2016-03-28	2017-02-24	圓筒形濺射靶件及其製造方法
TW107109686A TWI699444B (zh)	2016-03-28	2017-02-24	圓筒形濺射靶件及其製造方法
TW106106359A TWI635194B (zh)	2016-03-28	2017-02-24	Cylindrical sputtering target and manufacturing method thereof

Family Applications After (3)

Application Number	Title	Priority Date	Filing Date
TW108132861A TWI698542B (zh)	2016-03-28	2017-02-24	圓筒形濺射靶件及其製造方法
TW107109686A TWI699444B (zh)	2016-03-28	2017-02-24	圓筒形濺射靶件及其製造方法
TW106106359A TWI635194B (zh)	2016-03-28	2017-02-24	Cylindrical sputtering target and manufacturing method thereof

Country Status (3)

Country	Link
JP (3)	JP6397869B2 (2)
KR (1)	KR102001363B1 (2)
TW (4)	TWI704243B (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6523510B1 (ja) *	2018-03-30	2019-06-05	Ｊｘ金属株式会社	スパッタリングターゲット
BE1028481B1 (nl) *	2020-07-14	2022-02-14	Soleras Advanced Coatings Bv	Sputterdoel met grote densiteit
BE1028482B1 (nl)	2020-07-14	2022-02-14	Soleras Advanced Coatings Bv	Vervaardiging en hervullen van sputterdoelen

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JPH0776672B2 (ja) *	1986-08-26	1995-08-16	川崎重工業株式会社	流動層炉の分散板ノズル
JPH08144056A (ja) *	1994-11-22	1996-06-04	Mitsubishi Materials Corp	高強度を有するｉｔｏ薄膜形成用スパッタリングターゲット材の製造法
JP4227227B2 (ja) *	1998-10-30	2009-02-18	Ｄｏｗａホールディングス株式会社	Ｉｔｏスパッタリングターゲットの製造方法
JP2005069668A (ja) *	2003-08-01	2005-03-17	Asahi Glass Co Ltd	窒化ケイ素質セラミックス用焼成容器
KR20060043427A (ko) *	2004-03-05	2006-05-15	토소가부시키가이샤	원통형 스퍼터링 타겟, 세라믹 소결체와 그 제조방법
JP5299415B2 (ja) *	2010-12-13	2013-09-25	住友金属鉱山株式会社	円筒形スパッタリングターゲット用酸化物焼結体およびその製造方法
JP5750060B2 (ja) *	2012-01-18	2015-07-15	三井金属鉱業株式会社	セラミックス円筒形スパッタリングターゲット材およびその製造方法
TW201410904A (zh) *	2012-07-30	2014-03-16	東曹股份有限公司	氧化物燒結體、濺鍍靶及其製造方法
JP6186649B2 (ja) *	2013-07-09	2017-08-30	株式会社大一商会	遊技機
JP5799154B2 (ja) *	2013-12-13	2015-10-21	Jx日鉱日石金属株式会社	スパッタリングターゲット及びその製造方法
JP5887391B1 (ja) *	2014-08-22	2016-03-16	三井金属鉱業株式会社	スパッタリングターゲット用ターゲット材の製造方法および爪部材
JP6464776B2 (ja) *	2014-10-29	2019-02-06	住友金属鉱山株式会社	円筒形セラミックス焼結体およびその製造方法
JP2016117950A (ja)	2014-12-22	2016-06-30	住友化学株式会社	円筒型ターゲット材の製造方法および円筒型ターゲット材
JP5887625B1 (ja) *	2015-03-27	2016-03-16	Ｊｘ金属株式会社	円筒型スパッタリングターゲット、円筒型焼結体、円筒型成形体及びそれらの製造方法
JP6532287B2 (ja) *	2015-05-14	2019-06-19	キヤノン株式会社	医療診断支援装置、情報処理方法及びプログラム
JP2016014191A (ja) *	2015-07-21	2016-01-28	三井金属鉱業株式会社	セラミックス円筒形スパッタリングターゲット材およびその製造方法

2016
- 2016-11-01 JP JP2016214323A patent/JP6397869B2/ja active Active
2017
- 2017-02-24 TW TW109119026A patent/TWI704243B/zh active
- 2017-02-24 TW TW108132861A patent/TWI698542B/zh active
- 2017-02-24 TW TW107109686A patent/TWI699444B/zh active
- 2017-02-24 TW TW106106359A patent/TWI635194B/zh active
- 2017-05-26 JP JP2017104785A patent/JP6967372B2/ja active Active
- 2017-09-19 JP JP2017179069A patent/JP7244989B2/ja active Active
2019
- 2019-06-14 KR KR1020190070769A patent/KR102001363B1/ko active Active

Also Published As

Publication number	Publication date
TW201819660A (zh)	2018-06-01
TW202035740A (zh)	2020-10-01
TWI635194B (zh)	2018-09-11
JP2017197425A (ja)	2017-11-02
JP2017178784A (ja)	2017-10-05
TWI698542B (zh)	2020-07-11
JP7244989B2 (ja)	2023-03-23
TWI699444B (zh)	2020-07-21
JP2018009251A (ja)	2018-01-18
KR20190071656A (ko)	2019-06-24
JP6397869B2 (ja)	2018-09-26
JP6967372B2 (ja)	2021-11-17
TW201734240A (zh)	2017-10-01
KR102001363B1 (ko)	2019-07-17
TW202014543A (zh)	2020-04-16

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KR102493208B1 (ko)	2023-01-30	원통형 스퍼터링 타겟, 원통형 성형체, 및 원통형 스퍼터링 타겟, 원통형 소결체, 및 원통형 성형체의 제조 방법
CN104032270A (zh)	2014-09-10	一种大尺寸钌基合金溅射靶材及其制备方法
TWI698542B (zh)	2020-07-11	圓筒形濺射靶件及其製造方法
KR102524402B1 (ko)	2023-04-21	원통형 스퍼터링 타겟 및 그 제조 방법
TWI645060B (zh)	2018-12-21	Cylindrical ceramic sputtering target and cylindrical ceramic sputtering target formed by joining one or more cylindrical ceramic sputtering targets by a backing tube
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