TWI720170B - 旋轉蝕刻方法及半導體晶圓之製造方法 - Google Patents

旋轉蝕刻方法及半導體晶圓之製造方法 Download PDF

Info

Publication number: TWI720170B
Authority: TW; Taiwan
Prior art keywords: etching; wafer; back surface; seagull; grinding
Prior art date: 2016-04-05

Application number

TW106110847A

Other languages

English (en)

Chinese (zh)

Other versions

TW201802929A (zh

Inventor

根津勝美

吉田修

日下部恭一

Original Assignee

日商三益半導體工業股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-04-05

Filing date

2017-03-30

Publication date

2021-03-01

2017-03-30 Application filed by 日商三益半導體工業股份有限公司 filed Critical 日商三益半導體工業股份有限公司

2018-01-16 Publication of TW201802929A publication Critical patent/TW201802929A/zh

2021-03-01 Application granted granted Critical

2021-03-01 Publication of TWI720170B publication Critical patent/TWI720170B/zh

Links

238000005530 etching Methods 0.000 title claims abstract description 165
238000000034 method Methods 0.000 title claims abstract description 49
239000004065 semiconductor Substances 0.000 title claims abstract description 48
238000004519 manufacturing process Methods 0.000 title claims abstract description 13
238000000227 grinding Methods 0.000 claims abstract description 53
239000007788 liquid Substances 0.000 claims abstract description 43
238000009826 distribution Methods 0.000 claims abstract description 17
230000008569 process Effects 0.000 claims abstract description 15
230000002093 peripheral effect Effects 0.000 claims description 14
230000002787 reinforcement Effects 0.000 claims description 3
239000003112 inhibitor Substances 0.000 abstract description 8
235000012431 wafers Nutrition 0.000 description 123
230000006872 improvement Effects 0.000 description 6
238000007514 turning Methods 0.000 description 6
230000000052 comparative effect Effects 0.000 description 5
238000004556 laser interferometry Methods 0.000 description 5
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
230000008859 change Effects 0.000 description 4
238000005259 measurement Methods 0.000 description 4
238000003754 machining Methods 0.000 description 3
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
229910017604 nitric acid Inorganic materials 0.000 description 2
238000012545 processing Methods 0.000 description 2
239000000758 substrate Substances 0.000 description 2
238000007796 conventional method Methods 0.000 description 1
238000005336 cracking Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000005498 polishing Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000003672 processing method Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
230000003014 reinforcing effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000009987 spinning Methods 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000007480 spreading Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000008961 swelling Effects 0.000 description 1

Images

Landscapes

Mechanical Treatment Of Semiconductor (AREA)
Weting (AREA)
Grinding Of Cylindrical And Plane Surfaces (AREA)

TW106110847A 2016-04-05 2017-03-30 旋轉蝕刻方法及半導體晶圓之製造方法 TWI720170B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2016075806A JP6646510B2 (ja)	2016-04-05	2016-04-05	スピンエッチング方法及び半導体ウェーハの製造方法
JP2016-075806		2016-04-05

Publications (2)

Publication Number	Publication Date
TW201802929A TW201802929A (zh)	2018-01-16
TWI720170B true TWI720170B (zh)	2021-03-01

Family

ID=60045718

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW106110847A TWI720170B (zh)	2016-04-05	2017-03-30	旋轉蝕刻方法及半導體晶圓之製造方法

Country Status (2)

Country	Link
JP (1)	JP6646510B2 (ja)
TW (1)	TWI720170B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP3690805A4 (en)	2017-09-28	2021-09-29	Koito Manufacturing Co., Ltd.	SENSOR SYSTEM
JP7329391B2 (ja) *	2019-08-23	2023-08-18	東京エレクトロン株式会社	基板処理方法及び基板処理システム
JP7376317B2 (ja)	2019-10-30	2023-11-08	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法
JP7599020B2 (ja) *	2021-06-24	2024-12-12	東京エレクトロン株式会社	基板処理方法及び基板処理システム
JPWO2023219026A1 (ja) *	2022-05-13	2023-11-16

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20050000940A1 (en) *	2003-05-12	2005-01-06	Hayato Iwamoto	Etching method and etching device
JP2008060470A (ja) *	2006-09-01	2008-03-13	Disco Abrasive Syst Ltd	ウエーハの加工方法
CN103903975A (zh) *	2012-12-27	2014-07-02	株式会社迪思科	板状物的加工方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4415333B2 (ja) *	1999-09-20	2010-02-17	信越半導体株式会社	半導体ウェーハの製造方法
JP4008854B2 (ja) *	2003-06-24	2007-11-14	株式会社ノリタケカンパニーリミテド	高平面度加工方法
JP5012632B2 (ja) *	2008-04-15	2012-08-29	富士電機株式会社	半導体装置の製造方法
JP5430975B2 (ja) *	2009-02-25	2014-03-05	株式会社ディスコ	ワーク加工方法およびワーク加工装置
JP2011134797A (ja) *	2009-12-22	2011-07-07	Sumco Corp	枚葉式エッチング装置及び方法
JP6271339B2 (ja) *	2014-05-26	2018-01-31	株式会社ディスコ	研削研磨装置

2016
- 2016-04-05 JP JP2016075806A patent/JP6646510B2/ja active Active
2017
- 2017-03-30 TW TW106110847A patent/TWI720170B/zh active

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20050000940A1 (en) *	2003-05-12	2005-01-06	Hayato Iwamoto	Etching method and etching device
JP2008060470A (ja) *	2006-09-01	2008-03-13	Disco Abrasive Syst Ltd	ウエーハの加工方法
CN103903975A (zh) *	2012-12-27	2014-07-02	株式会社迪思科	板状物的加工方法

Also Published As

Publication number	Publication date
JP2017188549A (ja)	2017-10-12
TW201802929A (zh)	2018-01-16
JP6646510B2 (ja)	2020-02-14

Similar Documents

Publication	Publication Date	Title
TWI720170B (zh)	2021-03-01	旋轉蝕刻方法及半導體晶圓之製造方法
US9033764B2 (en)	2015-05-19	Method of polishing object to be polished
US8772177B2 (en)	2014-07-08	Semiconductor wafer and method of producing the same
TWI680507B (zh)	2019-12-21	晶圓研磨方法
JP6045542B2 (ja)	2016-12-14	半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法
TWI614803B (zh)	2018-02-11	單晶半導體晶圓以及製備半導體晶圓的方法
US8952496B2 (en)	2015-02-10	Semiconductor wafer and method of producing same
CN100541727C (zh)	2009-09-16	外延晶片的制造方法
US20250316506A1 (en)	2025-10-09	Substrate processing method and substrate processing system
US20240413022A1 (en)	2024-12-12	Substrate processing method and substrate processing system
JP6972184B2 (ja)	2021-11-24	半導体ウェハを処理するための方法、制御システムおよびプラント、ならびに半導体ウェハ
JP6232881B2 (ja)	2017-11-22	Ｓｏｉウェーハの製造方法
TW201834002A (zh)	2018-09-16	晶圓的製造方法
WO2017098696A1 (ja)	2017-06-15	研磨方法
KR101453683B1 (ko)	2014-10-22	웨이퍼 에지 연마 장치 및 웨이퍼 에지 연마 방법
JP6525046B1 (ja)	2019-06-05	半導体ウェーハの製造方法
TWI714292B (zh)	2020-12-21	矽晶圓的螺旋去角加工方法
CN114864465B (zh)	2025-09-26	用于键合的晶圆结构及其形成方法、键合方法
JP2011134797A (ja)	2011-07-07	枚葉式エッチング装置及び方法
JP5026356B2 (ja)	2012-09-12	拡散ウェーハの製造方法
JPH06198562A (ja)	1994-07-19	半導体ウェハ研磨機
KR20170009258A (ko)	2017-01-25	웨이퍼의 노치 연삭 장치
JP2013110322A (ja)	2013-06-06	シリコン酸化膜の形成方法及び形成装置、並びにシリコンウェーハの研磨方法