TWI737959B - 探索裝置、探索方法及電漿處理裝置 - Google Patents

探索裝置、探索方法及電漿處理裝置 Download PDF

Info

Publication number
TWI737959B
TWI737959B TW108103034A TW108103034A TWI737959B TW I737959 B TWI737959 B TW I737959B TW 108103034 A TW108103034 A TW 108103034A TW 108103034 A TW108103034 A TW 108103034A TW I737959 B TWI737959 B TW I737959B
Authority
TW
Taiwan
Prior art keywords
value
data
aforementioned
processing
search
Prior art date
Application number
TW108103034A
Other languages
English (en)
Chinese (zh)
Other versions
TW201941115A (zh
Inventor
大森健史
中田百科
小藤行
石川昌義
栗原優
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW201941115A publication Critical patent/TW201941115A/zh
Application granted granted Critical
Publication of TWI737959B publication Critical patent/TWI737959B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form
    • G05B19/4155—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of program data in numerical form characterised by program execution, i.e. part program or machine function execution, e.g. selection of a program
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • G06N3/09—Supervised learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N5/00—Computing arrangements using knowledge-based models
    • G06N5/02—Knowledge representation; Symbolic representation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Plasma & Fusion (AREA)
  • Computing Systems (AREA)
  • Chemical & Material Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Computational Linguistics (AREA)
  • Automation & Control Theory (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Medical Informatics (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW108103034A 2018-03-20 2019-01-28 探索裝置、探索方法及電漿處理裝置 TWI737959B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018052162A JP7137943B2 (ja) 2018-03-20 2018-03-20 探索装置、探索方法及びプラズマ処理装置
JP2018-052162 2018-03-20

Publications (2)

Publication Number Publication Date
TW201941115A TW201941115A (zh) 2019-10-16
TWI737959B true TWI737959B (zh) 2021-09-01

Family

ID=67984311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108103034A TWI737959B (zh) 2018-03-20 2019-01-28 探索裝置、探索方法及電漿處理裝置

Country Status (4)

Country Link
US (1) US11189470B2 (2)
JP (1) JP7137943B2 (2)
KR (1) KR102311313B1 (2)
TW (1) TWI737959B (2)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7121506B2 (ja) 2018-03-14 2022-08-18 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置
JP7056592B2 (ja) * 2019-01-17 2022-04-19 Ｊｆｅスチール株式会社 金属材料の製造仕様決定方法、製造方法、および製造仕様決定装置
KR102287460B1 (ko) * 2019-08-16 2021-08-10 엘지전자 주식회사 인공지능 무빙 에이전트
JP7094594B2 (ja) * 2019-10-30 2022-07-04 Ａｌｉｔｅｃｓ株式会社 処理条件推定装置、方法及びプログラム
JP7148644B2 (ja) * 2019-12-03 2022-10-05 株式会社日立ハイテク 探索装置、探索プログラム及びプラズマ処理装置
US11761969B2 (en) * 2020-01-21 2023-09-19 Kla Corporation System and method for analyzing a sample with a dynamic recipe based on iterative experimentation and feedback
JP7267966B2 (ja) * 2020-03-19 2023-05-02 株式会社東芝 情報処理装置及び情報処理方法
KR102768449B1 (ko) * 2020-03-31 2025-02-18 주식회사 히타치하이테크 하전 입자선 장치
JP7424909B2 (ja) 2020-05-18 2024-01-30 株式会社日立製作所 処理条件探索装置および処理条件探索方法
CN115777085A (zh) * 2020-07-09 2023-03-10 Asml荷兰有限公司 用于调整图案化过程的方法
JP7704506B2 (ja) * 2020-09-03 2025-07-08 東京エレクトロン株式会社 温度推定装置、プラズマ処理システム、温度推定方法及び温度推定プログラム
JP2022043780A (ja) * 2020-09-04 2022-03-16 東京エレクトロン株式会社 パラメータ選択方法および情報処理装置
JP7596106B2 (ja) * 2020-09-28 2024-12-09 キヤノン株式会社 情報処理装置、検査方法、プログラム、露光装置、決定方法、及び物品の製造方法
CN115210531B (zh) * 2021-02-10 2026-01-02 株式会社日立高新技术 轮廓线解析装置、处理条件决定系统、形状估计系统、半导体装置制造系统、搜索装置以及在这些中使用的数据结构
JP7571612B2 (ja) * 2021-02-22 2024-10-23 株式会社Sumco 加工条件設定装置、加工条件設定方法、及びウェーハの製造システム
JP7595278B2 (ja) * 2021-03-26 2024-12-06 ｂａｃｏｏｒ ｄＡｐｐｓ株式会社 再学習用データ管理システム、及び、再学習用データ管理方法
US11860591B2 (en) * 2021-09-13 2024-01-02 Applied Materials, Inc. Process recipe creation and matching using feature models
JP7672351B2 (ja) * 2022-01-25 2025-05-07 株式会社日立ハイテク 観察システム、観察方法およびプログラム
JP7709930B2 (ja) 2022-02-18 2025-07-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理条件の設定方法、基板処理方法、基板処理条件の設定システム、及び、基板処理システム
JP2025508924A (ja) * 2022-03-03 2025-04-10 エーイーエス グローバル ホールディングス， プライベート リミテッド 適応的予測制御システム
US12272536B2 (en) 2022-03-03 2025-04-08 Advanced Energy Industries, Inc. Systems and methods for delay and amplitude correction
US12360512B2 (en) 2022-03-03 2025-07-15 Advanced Energy Industries, Inc. Multi-step predictive control system
US11990324B2 (en) * 2022-03-03 2024-05-21 Advanced Energy Industries, Inc. Adaptive predictive control system
US20240321608A1 (en) * 2022-03-14 2024-09-26 Hitachi High-Tech Corporation Diagnostic device, semiconductor manufacturing equipment system, semiconductor equipment manufacturing system, and diagnostic method
TW202407483A (zh) 2022-05-06 2024-02-16 日商東京威力科創股份有限公司 模型產生方法、電腦程式及資訊處理裝置
CN119631092A (zh) 2022-07-14 2025-03-14 东京毅力科创株式会社 信息处理方法、信息处理系统以及计算机程序
US20240037442A1 (en) * 2022-07-26 2024-02-01 Applied Materials, Inc. Generating indications of learning of models for semiconductor processing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201104452A (en) * 2009-03-31 2011-02-01 Tokyo Electron Ltd Method and system for detection of tool performance degradation and mismatch
TW201202876A (en) * 2010-01-29 2012-01-16 Tokyo Electron Ltd Method and system for self-learning and self-improving a semiconductor manufacturing tool
WO2017149267A1 (en) * 2016-03-01 2017-09-08 The Aluminium Lighting Company Ltd Monitoring the structural health of columns and like structures
US20180052907A1 (en) * 2013-07-24 2018-02-22 Dynatrace Llc Method And System For Real-Time, False Positive Resistant, Load Independent And Self-Learning Anomaly Detection Of Measured Transaction Execution Parameters Like Response Times

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920002268A (ko) 1990-07-17 1992-02-28 유끼노리 가까즈 인텔리젠트가공장치
JPH1074188A (ja) * 1996-05-23 1998-03-17 Hitachi Ltd データ学習装置およびプラント制御装置
JPH10301979A (ja) 1997-04-30 1998-11-13 Oki Electric Ind Co Ltd モデルパラメータ抽出方法およびモデルパラメータ抽出装置
JP3086794B2 (ja) 1997-09-19 2000-09-11 豊田工機株式会社 数値制御研削盤
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP4215454B2 (ja) * 2001-07-12 2009-01-28 株式会社日立製作所 試料の凹凸判定方法、及び荷電粒子線装置
US6941301B2 (en) * 2002-01-18 2005-09-06 Pavilion Technologies, Inc. Pre-processing input data with outlier values for a support vector machine
US7272459B2 (en) 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
JP4671594B2 (ja) * 2003-10-08 2011-04-20 株式会社日立ハイテクノロジーズ データ収集管理方法およびそのシステム
JP2006074067A (ja) 2005-11-08 2006-03-16 Hitachi Ltd プラズマ処理装置および処理方法
JP2007165721A (ja) * 2005-12-15 2007-06-28 Omron Corp プロセス異常分析装置及びプログラム
WO2007109752A2 (en) 2006-03-22 2007-09-27 Ascension Orthopedics, Inc. Prosthetic implant and assembly method
US7567700B2 (en) * 2006-03-28 2009-07-28 Tokyo Electron Limited Dynamic metrology sampling with wafer uniformity control
US20080279434A1 (en) * 2007-05-11 2008-11-13 William Cassill Method and system for automated modeling
US8190543B2 (en) 2008-03-08 2012-05-29 Tokyo Electron Limited Autonomous biologically based learning tool
JP5489681B2 (ja) 2009-12-02 2014-05-14 キヤノン株式会社 固体撮像装置
JP5751045B2 (ja) 2010-08-31 2015-07-22 富士電機株式会社 プラントの運転条件最適化システム、プラントの運転条件最適化方法、プラントの運転条件最適化プログラム
JP6099626B2 (ja) * 2011-04-06 2017-03-22 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
TWI549007B (zh) 2013-02-07 2016-09-11 先知科技股份有限公司 製程參數的搜尋與分析方法及其電腦程式產品
JP6316578B2 (ja) * 2013-12-02 2018-04-25 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡
US9396443B2 (en) * 2013-12-05 2016-07-19 Tokyo Electron Limited System and method for learning and/or optimizing manufacturing processes
JP6101650B2 (ja) 2014-02-27 2017-03-22 日本電信電話株式会社 システムパラメタ学習装置、情報処理装置、方法、及びプログラム
CN107004060B (zh) * 2014-11-25 2022-02-18 Pdf决策公司 用于半导体制造工艺的经改进工艺控制技术
US9558545B2 (en) * 2014-12-03 2017-01-31 Kla-Tencor Corporation Predicting and controlling critical dimension issues and pattern defectivity in wafers using interferometry
US9711327B2 (en) 2015-07-16 2017-07-18 Applied Materials Israel, Ltd. Method and system for optimizing configurable parameters of inspection tools
KR102413703B1 (ko) 2015-08-20 2022-06-27 삼성전자주식회사 무선 통신 시스템에서 버퍼 상태 정보 송수신 방법 및 장치
JP2017102619A (ja) 2015-11-30 2017-06-08 オムロン株式会社 制御パラメータ調整装置、制御パラメータ調整方法、制御パラメータ調整プログラム
JP6650786B2 (ja) 2016-03-03 2020-02-19 三菱日立パワーシステムズ株式会社 制御パラメータ自動調整装置、制御パラメータ自動調整方法、及び制御パラメータ自動調整装置ネットワーク
JP2018068752A (ja) * 2016-10-31 2018-05-10 株式会社Ｐｒｅｆｅｒｒｅｄ Ｎｅｔｗｏｒｋｓ 機械学習装置、機械学習方法及びプログラム
JP6778666B2 (ja) 2017-08-24 2020-11-04 株式会社日立製作所 探索装置及び探索方法
JP6883787B2 (ja) 2017-09-06 2021-06-09 パナソニックＩｐマネジメント株式会社 学習装置、学習方法、学習プログラム、推定装置、推定方法、及び推定プログラム
JP6974712B2 (ja) 2017-10-24 2021-12-01 富士通株式会社 探索方法、探索装置および探索プログラム
JP7121506B2 (ja) 2018-03-14 2022-08-18 株式会社日立ハイテク 探索装置、探索方法及びプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201104452A (en) * 2009-03-31 2011-02-01 Tokyo Electron Ltd Method and system for detection of tool performance degradation and mismatch
TW201202876A (en) * 2010-01-29 2012-01-16 Tokyo Electron Ltd Method and system for self-learning and self-improving a semiconductor manufacturing tool
US20180052907A1 (en) * 2013-07-24 2018-02-22 Dynatrace Llc Method And System For Real-Time, False Positive Resistant, Load Independent And Self-Learning Anomaly Detection Of Measured Transaction Execution Parameters Like Response Times
WO2017149267A1 (en) * 2016-03-01 2017-09-08 The Aluminium Lighting Company Ltd Monitoring the structural health of columns and like structures

Also Published As

Publication number Publication date
KR102311313B1 (ko) 2021-10-12
TW201941115A (zh) 2019-10-16
US11189470B2 (en) 2021-11-30
KR20190110425A (ko) 2019-09-30
US20190295827A1 (en) 2019-09-26
JP2019165123A (ja) 2019-09-26
JP7137943B2 (ja) 2022-09-15

Similar Documents

Publication Publication Date Title
JP7137943B2 (ja) 探索装置、探索方法及びプラズマ処理装置
JP6778666B2 (ja) 探索装置及び探索方法
KR102039394B1 (ko) 탐색 장치 및 탐색 방법
JP7636418B2 (ja) 半導体製造プロセスのための性能予測子
JP5095999B2 (ja) 半導体処理ツールによって実行されるプロセスを分析する第１の原理シミュレーションを使用するシステム及び方法。
JP4795957B2 (ja) 半導体製造プロセスを制御する第１の原理シミュレーションを用いたシステム及び方法。
US10254641B2 (en) Layout pattern proximity correction through fast edge placement error prediction
JP5032118B2 (ja) 半導体製造プロセスにおいて第１の原理シミュレーションを用いたシステム及び方法。
US11874234B2 (en) Multi-level RF pulse monitoring and RF pulsing parameter optimization at a manufacturing system
JP6754878B2 (ja) 探索装置および探索方法
JP2025517079A (ja) マルチラン周期処理手順の分析
US20240427308A1 (en) Substrate process operation analysis application and generation of visualizations
JP2025530219A (ja) 画像解析による詰まり検出
JP2025541068A (ja) 仮想基板測定による基板特性の決定