TWI810698B - 電極界定未懸掛之聲波共振器 - Google Patents

電極界定未懸掛之聲波共振器 Download PDF

Info

Publication number: TWI810698B
Authority: TW; Taiwan
Prior art keywords: layer; aforementioned; thickness; acoustic impedance; mode
Prior art date: 2019-06-12

Application number

TW110140579A

Other languages

English (en)

Chinese (zh)

Other versions

TW202221950A (zh

Inventor

文清許

迪藍

克里斯多福Ｓ柯本

Original Assignee

美商特拉華公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-06-12

Filing date

2020-06-03

Publication date

2023-08-01

2020-05-14 Priority claimed from US16/874,164 external-priority patent/US11362640B2/en

2020-06-03 Application filed by 美商特拉華公司 filed Critical 美商特拉華公司

2022-06-01 Publication of TW202221950A publication Critical patent/TW202221950A/zh

2023-08-01 Application granted granted Critical

2023-08-01 Publication of TWI810698B publication Critical patent/TWI810698B/zh

Links

239000013078 crystal Substances 0.000 claims abstract description 36
229910013641 LiNbO 3 Inorganic materials 0.000 claims abstract description 35
239000000463 material Substances 0.000 claims description 76
238000005520 cutting process Methods 0.000 claims description 39
230000008878 coupling Effects 0.000 claims description 22
238000010168 coupling process Methods 0.000 claims description 22
238000005859 coupling reaction Methods 0.000 claims description 22
229910003460 diamond Inorganic materials 0.000 claims description 21
239000010432 diamond Substances 0.000 claims description 21
229910052710 silicon Inorganic materials 0.000 claims description 14
239000010703 silicon Substances 0.000 claims description 14
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
239000000919 ceramic Substances 0.000 claims description 6
229910052760 oxygen Inorganic materials 0.000 claims description 6
239000001301 oxygen Substances 0.000 claims description 6
230000000737 periodic effect Effects 0.000 claims description 6
239000011521 glass Substances 0.000 claims description 4
238000002161 passivation Methods 0.000 claims description 4
229920000642 polymer Polymers 0.000 claims description 4
229910003327 LiNbO3 Inorganic materials 0.000 claims description 3
229910052782 aluminium Inorganic materials 0.000 claims description 3
229910052750 molybdenum Inorganic materials 0.000 claims description 3
230000007704 transition Effects 0.000 claims description 3
229910052804 chromium Inorganic materials 0.000 claims description 2
229910052763 palladium Inorganic materials 0.000 claims description 2
229910052697 platinum Inorganic materials 0.000 claims description 2
229910052715 tantalum Inorganic materials 0.000 claims description 2
229910052719 titanium Inorganic materials 0.000 claims description 2
229910017083 AlN Inorganic materials 0.000 claims 1
230000002349 favourable effect Effects 0.000 claims 1
239000004020 conductor Substances 0.000 description 98
239000000758 substrate Substances 0.000 description 98
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
229910052751 metal Inorganic materials 0.000 description 17
239000002184 metal Substances 0.000 description 17
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 15
239000002131 composite material Substances 0.000 description 14
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
230000004044 response Effects 0.000 description 13
238000010586 diagram Methods 0.000 description 12
230000000717 retained effect Effects 0.000 description 12
229910004298 SiO 2 Inorganic materials 0.000 description 9
235000012239 silicon dioxide Nutrition 0.000 description 9
239000000377 silicon dioxide Substances 0.000 description 9
230000000638 stimulation Effects 0.000 description 9
238000004891 communication Methods 0.000 description 7
239000010408 film Substances 0.000 description 7
238000000034 method Methods 0.000 description 6
238000010897 surface acoustic wave method Methods 0.000 description 6
238000003780 insertion Methods 0.000 description 5
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238000009434 installation Methods 0.000 description 5
229910052783 alkali metal Inorganic materials 0.000 description 4
150000001340 alkali metals Chemical class 0.000 description 4
229910052681 coesite Inorganic materials 0.000 description 4
229910052906 cristobalite Inorganic materials 0.000 description 4
230000007423 decrease Effects 0.000 description 4
229910052682 stishovite Inorganic materials 0.000 description 4
229910052905 tridymite Inorganic materials 0.000 description 4
229910052721 tungsten Inorganic materials 0.000 description 4
239000000853 adhesive Substances 0.000 description 3
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229910052784 alkaline earth metal Inorganic materials 0.000 description 3
239000002585 base Substances 0.000 description 3
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238000002310 reflectometry Methods 0.000 description 3
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229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
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229910003465 moissanite Inorganic materials 0.000 description 2
238000000465 moulding Methods 0.000 description 2
229910010271 silicon carbide Inorganic materials 0.000 description 2
239000010409 thin film Substances 0.000 description 2
229910002704 AlGaN Inorganic materials 0.000 description 1
PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
229910002601 GaN Inorganic materials 0.000 description 1
238000001069 Raman spectroscopy Methods 0.000 description 1
PGHQEOHSIGPJOC-UHFFFAOYSA-N [Fe].[Ta] Chemical compound [Fe].[Ta] PGHQEOHSIGPJOC-UHFFFAOYSA-N 0.000 description 1
-1 alkaline earth metal titanate Chemical class 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
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238000005229 chemical vapour deposition Methods 0.000 description 1
238000005094 computer simulation Methods 0.000 description 1
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239000003989 dielectric material Substances 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
230000017525 heat dissipation Effects 0.000 description 1
239000004615 ingredient Substances 0.000 description 1
229910052500 inorganic mineral Inorganic materials 0.000 description 1
HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
239000011707 mineral Substances 0.000 description 1
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239000010980 sapphire Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000012360 testing method Methods 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/0004—Impedance-matching networks
- H03H9/0014—Impedance-matching networks using bulk acoustic wave devices
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors

Landscapes

Physics & Mathematics (AREA)
Acoustics & Sound (AREA)
Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

TW110140579A 2019-06-12 2020-06-03 電極界定未懸掛之聲波共振器 TWI810698B (zh)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US201962860426P	2019-06-12	2019-06-12
US62/860,426		2019-06-12
US16/874,164 US11362640B2 (en)	2018-07-17	2020-05-14	Electrode-defined unsuspended acoustic resonator
US16/874,164		2020-05-14

Publications (2)

Publication Number	Publication Date
TW202221950A TW202221950A (zh)	2022-06-01
TWI810698B true TWI810698B (zh)	2023-08-01

Family

ID=73546976

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
TW110140579A TWI810698B (zh)	2019-06-12	2020-06-03	電極界定未懸掛之聲波共振器
TW112124378A TWI866311B (zh)	2019-06-12	2020-06-03	電極界定未懸掛之聲波共振器
TW109118689A TWI748497B (zh)	2019-06-12	2020-06-03	電極界定未懸掛之聲波共振器

Family Applications After (2)

Application Number	Title	Priority Date	Filing Date
TW112124378A TWI866311B (zh)	2019-06-12	2020-06-03	電極界定未懸掛之聲波共振器
TW109118689A TWI748497B (zh)	2019-06-12	2020-06-03	電極界定未懸掛之聲波共振器

Country Status (4)

Country	Link
JP (1)	JP7307032B2 (ja)
KR (2)	KR102451077B1 (ja)
DE (1)	DE102020115436B4 (ja)
TW (3)	TWI810698B (ja)

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP4454128A1 (en) *	2022-03-08	2024-10-30	Huawei Technologies Co., Ltd.	An acoustic resonator solidly mounted on a high acoustic velocity substrate
CN116707477B (zh) *	2023-08-02	2024-04-02	深圳新声半导体有限公司	用于制造薄膜体声波谐振器fbar滤波装置的方法

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US20130099630A1 (en) *	2010-08-31	2013-04-25	Taiyo Yuden Co., Ltd.	Acoustic wave device
US20140117815A1 (en) *	2012-10-26	2014-05-01	Avago Technologies General Ip (Singapore) Pte. Ltd	Temperature compensated resonator device having low trim sensitivy and method of fabricating the same

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2020
- 2020-06-03 TW TW110140579A patent/TWI810698B/zh active
- 2020-06-03 TW TW112124378A patent/TWI866311B/zh active
- 2020-06-03 TW TW109118689A patent/TWI748497B/zh active
- 2020-06-04 JP JP2020097677A patent/JP7307032B2/ja active Active
- 2020-06-10 DE DE102020115436.4A patent/DE102020115436B4/de active Active
- 2020-06-11 KR KR1020200070691A patent/KR102451077B1/ko active Active
2022
- 2022-09-29 KR KR1020220124142A patent/KR102740970B1/ko active Active

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US20130099630A1 (en) *	2010-08-31	2013-04-25	Taiyo Yuden Co., Ltd.	Acoustic wave device
US20140117815A1 (en) *	2012-10-26	2014-05-01	Avago Technologies General Ip (Singapore) Pte. Ltd	Temperature compensated resonator device having low trim sensitivy and method of fabricating the same

Also Published As

Publication number	Publication date
TW202221950A (zh)	2022-06-01
KR102451077B1 (ko)	2022-10-06
TWI866311B (zh)	2024-12-11
DE102020115436B4 (de)	2025-03-27
JP2020202564A (ja)	2020-12-17
TW202343838A (zh)	2023-11-01
JP7307032B2 (ja)	2023-07-11
TWI748497B (zh)	2021-12-01
DE102020115436A1 (de)	2020-12-17
TW202103346A (zh)	2021-01-16
KR20220137599A (ko)	2022-10-12
KR102740970B1 (ko)	2024-12-11
KR20200142469A (ko)	2020-12-22

Publication	Publication Date	Title
US11362640B2 (en)	2022-06-14	Electrode-defined unsuspended acoustic resonator
US10938367B2 (en)	2021-03-02	Solidly mounted layer thin film device with grounding layer
JP3940932B2 (ja)	2007-07-04	薄膜圧電共振器、薄膜圧電デバイスおよびその製造方法
TWI735913B (zh)	2021-08-11	電極界定共振器
KR102780373B1 (ko)	2025-03-12	전극 정의 공진기
TWI908923B (zh)	2025-12-21	聲波裝置中之壓電層配置及相關方法
KR100771345B1 (ko)	2007-10-29	압전 박막 공진자 및 필터
CN118369853A (zh)	2024-07-19	弹性波装置
TWI810698B (zh)	2023-08-01	電極界定未懸掛之聲波共振器
US12244290B2 (en)	2025-03-04	Electrode-defined unsuspended acoustic resonator
KR20220055718A (ko)	2022-05-04	에어갭형 fbar
WO2025123162A1 (en)	2025-06-19	Acoustic resonator
US20250007486A1 (en)	2025-01-02	Acoustic wave devices and modules using same