TWI837123B - 光阻及蝕刻模型建立 - Google Patents

光阻及蝕刻模型建立 Download PDF

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Publication number
TWI837123B
TWI837123B TW108112271A TW108112271A TWI837123B TW I837123 B TWI837123 B TW I837123B TW 108112271 A TW108112271 A TW 108112271A TW 108112271 A TW108112271 A TW 108112271A TW I837123 B TWI837123 B TW I837123B
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TW
Taiwan
Prior art keywords
model
etch
computational
segments
transfer function
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TW108112271A
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English (en)
Chinese (zh)
Other versions
TW202006817A (zh
Inventor
沙拉維納布里恩 斯里拉曼
大衛 Ｍ 萊德
Original Assignee
美商蘭姆研究公司
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Publication of TW202006817A publication Critical patent/TW202006817A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
TW108112271A 2018-04-10 2019-04-09 光阻及蝕刻模型建立 TWI837123B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862655495P 2018-04-10 2018-04-10
US62/655,495 2018-04-10

Publications (2)

Publication Number Publication Date
TW202006817A TW202006817A (zh) 2020-02-01
TWI837123B true TWI837123B (zh) 2024-04-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW108112271A TWI837123B (zh) 2018-04-10 2019-04-09 光阻及蝕刻模型建立
TW112142655A TWI846635B (zh) 2018-04-10 2019-04-09 光阻及蝕刻模型建立

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112142655A TWI846635B (zh) 2018-04-10 2019-04-09 光阻及蝕刻模型建立

Country Status (5)

Country Link
US (2) US11624981B2 (fr)
KR (2) KR102812035B1 (fr)
CN (1) CN112005347B (fr)
TW (2) TWI837123B (fr)
WO (1) WO2019199697A1 (fr)

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CN114488705B (zh) * 2022-01-13 2026-02-27 东方晶源微电子科技(北京)股份有限公司 一种负向显影光刻胶模型优化方法
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CN115408650B (zh) * 2022-08-03 2023-04-28 武汉宇微光学软件有限公司 光刻胶多级串连表征网络的建模、校准、仿真方法和系统
CN115616874B (zh) * 2022-11-07 2026-03-24 中国科学院微电子研究所 光刻胶模型校准的优化图形选择方法、装置、系统和介质
TWI835455B (zh) * 2022-12-08 2024-03-11 東龍投資股份有限公司 製程檢測方法、製程檢測圖案及形成方法，及光罩
CN118732409A (zh) * 2023-03-28 2024-10-01 腾讯科技（深圳）有限公司 用于生成光刻胶图案的光刻胶模型的确定方法和装置
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