TWI842995B - Detection system for use in a multi-beam charged particle system and particle beam system - Google Patents
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Abstract
Description
本發明係關於用許多粒子束操作的粒子束系統。 The present invention relates to a particle beam system operating with a plurality of particle beams.
WO 2005/024881 A2揭示一種電子顯微鏡系統型態下的多重粒子束系統,其使用許多電子束來操作,以便同時藉由電子束的集束掃描要檢查的物件。藉由將一電子來源所產生的電子束指引至具有多孔徑的多孔板,來產生該電子束的集束。某些電子束的電子撞擊該多孔板並由此板吸收,並且電子束的其他部分穿過該多孔板的孔徑,如此在每一孔徑之後的電子束路徑內形成電子束,該電子束的截面由該孔徑的截面所界定。更進一步,將該電子束路徑上游內及/或該多孔板下游內所提供合適選取的電場,引導至該多孔板內的每一孔徑,每一孔徑當成通過該孔徑的該電子束上的一透鏡,如此該電子束聚焦在與該多孔板有段距離的一平面內。其中形成該電子束焦點的該平面由後續光學設備成像在要檢查的該物件之表面上,如此撞擊在該物件上的個別電子束聚焦成為主電子束。在此產生發自於該物件的背散射電子或第二電子,其形成第二電子束並藉由其他光學設備引導至一偵測器上。在該偵測器上,每一該等第二電子束都撞擊在一分離的偵測器元件上,如此在其間偵測到的電子密度提供有關該物件在對 應主電子束入射至該物件上的該位置之資訊。主電子束的集束有系統地掃描過該物件的表面,以便以傳統用於掃描電子顯微鏡的方式產生該物件的電子顯微影像。 WO 2005/024881 A2 discloses a multi-particle beam system in the form of an electron microscope system, which operates using a plurality of electron beams so as to simultaneously scan an object to be inspected by beam focusing of the electron beams. The beam focusing of the electron beam is generated by directing an electron beam generated by an electron source to a porous plate having multiple apertures. Some of the electrons of the electron beam strike the porous plate and are absorbed by the plate, and other parts of the electron beam pass through the apertures of the porous plate, so that an electron beam is formed in the electron beam path after each aperture, and the cross section of the electron beam is defined by the cross section of the aperture. Furthermore, a suitably selected electric field provided in the upstream of the electron beam path and/or in the downstream of the porous plate is directed to each aperture in the porous plate, each aperture acting as a lens on the electron beam passing through the aperture, so that the electron beam is focused in a plane at a distance from the porous plate. The plane forming the focus of the electron beam is imaged by subsequent optical equipment on the surface of the object to be inspected, so that the individual electron beams impinging on the object are focused into a main electron beam. Backscattered electrons or secondary electrons originating from the object are generated here, which form a secondary electron beam and are guided to a detector by other optical equipment. At the detector, each of the secondary electron beams impinges on a separate detector element, so that the electron density detected therebetween provides information about the position of the object at which the corresponding primary electron beam was incident on the object. The primary electron beam is systematically scanned across the surface of the object to produce an electron microscopic image of the object in the manner conventionally used for scanning electron microscopes.
本專利申請案的目的在於發展出這種多束粒子束系統,尤其是進一步改善這種多束粒子束系統內產生的對比。進一步目標為指定已發展的方法用於物件的粒子光學檢查。 The object of this patent application is to develop such a multi-beam particle beam system and in particular to further improve the contrast generated within such a multi-beam particle beam system. A further object is to specify the developed method for the particle optical inspection of an object.
利用具有如後續申請專利範圍之特徵的一偵測器系統,可達成指定目的。有利的具體實施例來自於獨立申請專利範圍之特徵。 The specified object can be achieved by means of a detector system having the features as in the subsequent patent claims. Advantageous specific embodiments are derived from the features of the independent patent claims.
根據一個具體實施例,該粒子束系統包含一粒子源,設置成產生一第一帶電粒子束。更進一步,該粒子束系統包含一多束產生器,設置成從該帶電粒子的第一入射束產生複數個粒子束,如此粒子束在與該部分束傳播方向垂直的方向內彼此空間相隔。在此,該等複數個部分束包含至少一第一部分束與一第二部分束。該粒子束系統更進一步包含一物鏡,設置成將入射的部分束聚焦在一第一平面內,如此其上該第一部分入射至該第一平面內的一第一區域與其上一第二部分束入射的一第二區域分離。更進一步,該粒子束系統包含內含複數個偵測區的一偵測器系統以及一投影系統。該投影系統設置成將因為該入射部分束而離開該第一平面的相互作用產物,投射在該偵測器系統的該等偵測區域上。在此,該投影系統與該等複數個偵測區域彼此匹配,如此發自於該第一平面中該第一區域的相互作用產物投影至該偵測器系統的一第一偵測區域上,並且發自於該第一平面中該第二區域的相互作用產物投影至一第二偵測區域上。在此,該第二偵測區域與該第一偵測區域不同。更進一步,該偵測器系統包含一過濾裝置,用於根據其個別軌道來過濾該等相互作用產物。 According to a specific embodiment, the particle beam system includes a particle source, which is configured to generate a first charged particle beam. Further, the particle beam system includes a multi-beam generator, which is configured to generate a plurality of particle beams from a first incident beam of charged particles, so that the particle beams are spatially separated from each other in a direction perpendicular to the propagation direction of the partial beams. Here, the plurality of partial beams include at least a first partial beam and a second partial beam. The particle beam system further includes an objective lens, which is configured to focus the incident partial beams in a first plane, so that a first area on which the first portion is incident in the first plane is separated from a second area on which the second partial beam is incident. Further, the particle beam system includes a detector system including a plurality of detection areas and a projection system. The projection system is arranged to project the interaction products leaving the first plane due to the incident partial beam onto the detection regions of the detector system. Here, the projection system and the plurality of detection regions are matched to each other so that the interaction products emanating from the first region in the first plane are projected onto a first detection region of the detector system and the interaction products emanating from the second region in the first plane are projected onto a second detection region. Here, the second detection region is different from the first detection region. Furthermore, the detector system comprises a filtering device for filtering the interaction products according to their individual tracks.
藉由根據其個別軌道之合適的相互作用產物過濾,可提高由 合併該偵測器系統的該等輸出信號所建立的影像內之對比,讓該等許多偵測區域形成一整體影像。在此,該過濾不應受限為遮蓋或抑制其軌道在遠離該投影系統光學軸線的外部區域內延伸的相互作用產物。 By suitable filtering of the interaction products according to their individual trajectories, the contrast in the image created by merging the output signals of the detector system can be increased so that the many detection areas form an overall image. Here, the filtering should not be limited to masking or suppressing interaction products whose trajectories extend in outer regions far from the optical axis of the projection system.
該等帶電粒子可為電子或離子。尤其是,該等相互作用產物可為第二電子或背散射電子。然而,該等相互作用產物也可為主要粒子,其經歷因為該物鏡與該物件之間減速電位造成的運動逆轉,而沒有在該等主要粒子與該物件之間發生的物理散射處理。 The charged particles may be electrons or ions. In particular, the interaction products may be secondary electrons or backscattered electrons. However, the interaction products may also be primary particles which undergo a reversal of motion due to the deceleration potential between the objective and the object without physical scattering processes occurring between the primary particles and the object.
在一個具體實施例,該過濾裝置具有複數個第一偵測場,其關聯於該第一偵測區域。更進一步,該過濾裝置具有複數個第二偵測場,其關聯於該第二偵測區域。在此,每一第一和第二偵測場都具體實施成以和相互作用產物入射在其他偵測場上無關的方式,偵測該等相互作用產物入射在該個別偵測場上。表達方式不同,此偵測器具有許多偵測場用於每一偵測區域,在每一情況下該等偵測場分開偵測每一相互作用產物。這種儀器已知來自光顯微鏡、來自文件US8705172B2和DE102010049627 A1以及尚未公開的德國專利申請案第10 2013 218 795.5號。 In a specific embodiment, the filter device has a plurality of first detection fields, which are associated with the first detection region. Furthermore, the filter device has a plurality of second detection fields, which are associated with the second detection region. Here, each of the first and second detection fields is embodied to detect the impact of the interaction products on the individual detection field in a manner independent of the impact of the interaction products on the other detection fields. Expressed differently, the detector has a plurality of detection fields for each detection region, which in each case detect each interaction product separately. Such an instrument is known from light microscopes, from documents US8705172B2 and DE102010049627 A1 and from the not yet published German patent application No. 10 2013 218 795.5.
該粒子束系統可更進一步包含一控制器,其具體實施成個別讀取並且處理來自一相關偵測區域的該等複數個偵測場之偵測器信號。利用評估產自於該等許多偵測場的該等相關偵測器信號,可獲得重要額外資訊。藉由範例,每一偵測場的該等偵測信號之分析,使其可建立該相關主要部分束是否聚焦入射在一物件表面上,即是該物件表面是否在該入射部分束的該位置上與該第一平面重疊。接著,此資訊可用來致動一自動調整系統,像是一自動對焦系統、一偵測器調整系統或一過濾調整系統,以便讓該等部分束理想聚焦在該物件的表面上。更進一步,在該相關部分束入射至該物件的該位置上,利用比較屬於該相同偵測區域的該等偵測場之該等偵測器信號,可獲得有關檢查物件拓撲的額外資訊。更進一步,將屬於該等複數個偵測區域或屬於整個影像的該等偵測器信號平均,如此獲得有 關該物件表面上該平均偵測區域(物件區域)之內該樣本傾斜之資訊。再者,在該物件表面上該區域之內,該物件的整體外型,這由該等評估偵測器信號界定,可利用評估屬於該等複數個偵測區域的該等偵測器信號來決定,並且此資訊可用於修正一焦距及/或修正與該評估物件區域相鄰的該等物件區域內之像差。 The particle beam system may further comprise a controller which is embodied to individually read and process the detector signals from the plurality of detection fields of a relevant detection area. By evaluating the relevant detector signals resulting from the many detection fields, important additional information can be obtained. By way of example, analysis of the detector signals of each detection field makes it possible to establish whether the relevant main partial beam is focused incident on an object surface, i.e. whether the object surface overlaps with the first plane at the position of the incident partial beam. This information can then be used to actuate an automatic adjustment system, such as an automatic focus system, a detector adjustment system or a filter adjustment system, so that the partial beams are ideally focused on the surface of the object. Furthermore, at the location where the relevant partial beam is incident on the object, additional information about the topology of the object under inspection can be obtained by comparing the detector signals of the detection fields belonging to the same detection area. Furthermore, the detector signals belonging to the plurality of detection areas or to the entire image are averaged, thus obtaining information about the tilt of the sample within the average detection area (object area) on the surface of the object. Furthermore, within the region on the object surface, the overall shape of the object, as defined by the evaluation detector signals, can be determined by evaluating the detector signals belonging to the plurality of detection regions, and this information can be used to correct a focus and/or correct aberrations in the object regions adjacent to the evaluation object region.
在進一步具體實施例內,該偵測系統可額外包含產生分散的一元件。該元件產生該分散,然後導致與一偵測區域相關聯的該等相互作用產物依照其個別動能而分離。利用比較屬於該相同偵測區域中該等偵測場的該等偵測器信號,可減少當該等相互作用產物從該物件冒出時的動能。如此可產生一電壓對比。在此,電壓對比也應理解為針對從該物件區域冒出具有不同電荷的第二電子,該等第二電子從該物件冒出的電位並不同。如此的一個範例為半導體結構內的接點孔,其建立該等導體軌跡結構的不同平面間之接觸。若在這種接點孔內的兩平面之間並無連接,則使用例如電子這類帶電粒子的照射會導致該接點孔內充電,因為電荷無法消散。然後該非彈性散射粒子(例如電子)或第二電子從與接觸的接點孔的情況不同的電位開始。結果就是由於這些電子具有不同動能,因此可區分這些電子,而由於產生分散的該元件而導致不同軌跡,如此可以顯著較高速度偵測未接觸的接點孔,因為訊噪比大幅增加。 In a further specific embodiment, the detection system may additionally comprise an element for generating dispersion. The element generates the dispersion, which then causes the interaction products associated with a detection area to separate according to their individual kinetic energies. By comparing the detector signals belonging to the detection fields in the same detection area, the kinetic energy of the interaction products when they emerge from the object can be reduced. In this way, a voltage contrast can be generated. Here, the voltage contrast should also be understood as the different potentials at which second electrons emerge from the object area with different charges. An example of this is a contact hole in a semiconductor structure, which establishes contact between different planes of the conductor track structures. If there is no connection between the two planes in such a contact hole, irradiation with charged particles such as electrons will lead to charging in the contact hole, since the charge cannot dissipate. The inelastic scattered particles (such as electrons) or second electrons then start from a different potential than in the case of the contact hole in contact. The result is that these electrons can be distinguished due to their different kinetic energies, and due to the different trajectories caused by the element that generates the dispersion, which allows the detection of uncontacted contact holes at significantly higher speeds, since the signal-to-noise ratio is greatly increased.
而除了具有產生分散的元件之具體實施例以外,該過濾裝置也可為一分散產生成像能量過濾器。該等已偵測到的相互作用產物可分離,並且借助於這種能量過濾器依照其動能來選取。此具體實施例也可用於產生一電壓對比。 In addition to the embodiment with a dispersion-generating element, the filter device can also be a dispersion-generating imaging energy filter. The detected interaction products can be separated and selected according to their kinetic energy by means of this energy filter. This embodiment can also be used to generate a voltage contrast.
根據進一步具體實施例,該投影系統包含一交錯平面,並且該過濾裝置具體實施為配置在此交錯平面附近的一光欄。尤其是,該光欄具有一環形孔徑。而借助於該環形光欄所能達到的就是,只有偵測在一特定虛擬開始角度範圍之下從該已檢查物件冒出的那些相互作用產物。在該 環形光欄之下,根據從該物件冒出的該等相互作用產物之該初始速度的向量分量與該物件表面平行,可有一選擇。結果,可獲得有關該物件表面拓撲,或在其上該相關部分束入射的該位置上該物件表面上材料的額外資訊。尤其是,可藉由該環形光欄部分過濾通過該光欄的該等相互作用產物的能量分佈。因為該等相互作用產物的該能量分佈,特別是在第二電子當成相互作用產物的情況下,除此之外也取決於該局部表面電位以及所發出的第二電子數量,也就是在其上第二電子從該物件冒出的該位置上之原子質量數,如此可獲得有關該物件表面上個別位置處之該物件材料成分的額外資訊,甚至假設該樣本表面。 According to a further specific embodiment, the projection system comprises a staggered plane and the filtering device is embodied as a light bar arranged in the vicinity of the staggered plane. In particular, the light bar has an annular aperture. What can be achieved by means of the annular light bar is that only those interaction products that emerge from the inspected object within a certain virtual starting angle range are detected. Under the annular light bar, a selection can be made according to which vector component of the initial velocity of the interaction products emerging from the object is parallel to the object surface. As a result, additional information can be obtained about the object surface topology or the material on the object surface at the position on which the relevant partial beam is incident. In particular, the energy distribution of the interaction products passing through the light bar can be partially filtered by the annular light bar. Since the energy distribution of the interaction products, in particular in the case of second electrons as interaction products, depends among other things on the local surface potential and the number of emitted second electrons, i.e. the atomic mass number at the position at which the second electron emerges from the object, additional information can be obtained about the material composition of the object at individual positions on the surface of the object, and even assuming the sample surface.
根據進一步具體實施例,該投影系統可包含一個接著一個依序排列的複數個粒子束透鏡,產生連續彼此相接的至少兩個交錯平面。然後,個別一個光欄可配置在該等至少兩個交錯平面的每一者內。藉由範例,一第一光欄可具有一中央孔徑,只有相互作用產物可穿過,其軌跡延伸足夠接近該投影系統的光學軸線。使用這種「亮場光欄」,可避免許多偵測區域之間的干擾。不同的表示方式,借助該「亮場光欄」可避免從該第一平面的第一區域冒出之相互作用產物,撞擊在與該第一平面內不同區域相關聯的一偵測區域上。再一次,具有環形孔徑的光欄可配置在該第二交錯平面內。類似於上面已經說明的具體實施例,其可獲得有關在該物件表面上原子質量數的額外資訊及/或產生額外拓撲對比。這較佳用一暗場光欄來執行。 According to a further specific embodiment, the projection system may comprise a plurality of particle beam lenses arranged one after another in sequence, producing at least two intersecting planes that are connected in succession to each other. Then, a respective light bar may be arranged in each of the at least two intersecting planes. By way of example, a first light bar may have a central aperture through which only interaction products may pass, whose trajectories extend sufficiently close to the optical axis of the projection system. Using such a "bright field light bar", interferences between many detection areas can be avoided. Expressed differently, with the aid of the "bright field light bar", it can be avoided that interaction products emerging from a first area of the first plane impinge on a detection area associated with a different area in the first plane. Once again, a light bar with an annular aperture can be arranged in the second intersecting plane. Similar to the embodiments already described above, it is possible to obtain additional information about the atomic mass numbers on the surface of the object and/or to generate additional topological contrasts. This is preferably performed using a dark field lightbar.
利用改變該粒子束透鏡的焦距,就可改變用該光欄所獲得的過濾效果。因此,在進一步具體實施例內可改變該粒子束透鏡的焦距。 By changing the focal length of the particle beam lens, the filtering effect obtained by the light barrier can be changed. Therefore, in a further specific embodiment, the focal length of the particle beam lens can be changed.
該粒子束透鏡可具體實施為磁性透鏡或為靜電透鏡,或可具體實施為重疊磁性與靜電場的組合透鏡。 The particle beam lens can be implemented as a magnetic lens or an electrostatic lens, or can be implemented as a combined lens with superimposed magnetic and electrostatic fields.
根據進一步具體實施例,該粒子束系統更進一步包含一束偏轉系統,其具體實施來將該第一粒子束和該第二粒子束偏轉成與其傳播方 向垂直。在此情況下,該控制器更進一步具體實施成合併許多偵測區域的偵測器信號(屬於不同部分束偏轉),來形成一影像。利用偏轉該等部分束,則可由每一部分束掃描整個第一區域,並且藉由複數個部分束掃描所產生的該影像資訊可合併形成一完整影像。 According to a further specific embodiment, the particle beam system further comprises a beam deflection system, which is specifically implemented to deflect the first particle beam and the second particle beam perpendicular to their propagation direction. In this case, the controller is further specifically implemented to merge the detector signals (belonging to different partial beam deflections) of many detection areas to form an image. By deflecting the partial beams, the entire first area can be scanned by each partial beam, and the image information generated by the plurality of partial beam scans can be merged to form a complete image.
根據進一步具體實施例,本發明係關於一物件的微觀粒子檢查之方法,包含下列步驟:●在複數個互相分開的場區域內,分別用一個帶電粒子的主要束同時照射該物件,●收集由於該入射主要粒子束而從該物件發出的相互作用產物,●將該等相互作用產物投射至一偵測器的複數個偵測區域上,如此從兩不同場區域發出的該等相互作用產物都投射在該偵測器的不同偵測區域上,以及●以根據其個別軌跡的方式過濾該等相互作用產物。 According to a further specific embodiment, the present invention is a method for microscopic particle inspection of an object, comprising the following steps: ● irradiating the object simultaneously with a primary beam of charged particles in a plurality of mutually separated field regions, ● collecting interaction products emitted from the object due to the incident primary particle beam, ● projecting the interaction products onto a plurality of detection regions of a detector, so that the interaction products emitted from two different field regions are projected onto different detection regions of the detector, and ● filtering the interaction products in a manner according to their individual trajectories.
尤其是,根據該等相互作用產物的動能來過濾。 In particular, the products of these interactions are filtered based on their kinetic energy.
如上面已經進一步說明,在一個具體實施例內借助於一偵測器,該偵測器包含對相互作用產物敏感的複數個相互獨立之偵測場,針對每一偵測區域來實施該等相互作用產物的過濾。在此,屬於該相同偵測區域的該等偵測場之該等信號可彼此相對評估,以便例如產生具有改善電壓對比、改善拓撲對比或改善材料對比的影像。更進一步,可用一特定校準或建立該物件表面的高度外型,來強調邊緣。 As already further explained above, in a specific embodiment, the filtering of the interaction products is performed for each detection area by means of a detector comprising a plurality of mutually independent detection fields sensitive to the interaction products. In this case, the signals of the detection fields belonging to the same detection area can be evaluated relative to one another in order to produce images with improved voltage contrast, improved topological contrast or improved material contrast, for example. Furthermore, edges can be emphasized by a specific calibration or by establishing a height profile of the object surface.
在進一步具體實施例內,該粒子束系統在俗稱的反射模式內運作,用於物件的微觀粒子檢查的方法。在此方法中,一靜電電位供應給要檢查的該物件,該電位實質上對應至該(等)粒子束產生器(粒子源)的電位。該靜電電位供應至該物件之後,該等主要粒子束依照到達該物件之前一靜電反射鏡至一零動能,但是在該物件表面的直接周圍上之情況來減速,並且在往逆向方向內加速,即是在回到該物鏡的方向。因為該物件的 靜電電位而經歷過逆向運動的這些粒子集中起來,並且該集中的帶電粒子實質上投射至一偵測器的複數個偵測區域上,如此從該物件平面內兩不同場區域收集到的該等帶電粒子都投射至該偵測器的不同偵測區域上。在根據本發明的此方法具體實施例內,依照所收集粒子的軌跡來進行過濾。在此,該等集中的粒子借助於一偵測器,該偵測器包含對每一偵測區域的該等集中粒子敏感的複數個相互獨立之偵測場,針對每一偵測區域來進行過濾。 In a further specific embodiment, the particle beam system operates in the so-called reflection mode for a method of microscopic particle inspection of an object. In this method, an electrostatic potential is applied to the object to be inspected, which potential substantially corresponds to the potential of the particle beam generator (particle source). After the electrostatic potential is applied to the object, the primary particle beams are decelerated according to a static reflector to zero kinetic energy before reaching the object, but in the direct vicinity of the object surface, and are accelerated in the reverse direction, i.e. in the direction back to the objective lens. The particles that have undergone reverse motion due to the electrostatic potential of the object are concentrated, and the concentrated charged particles are substantially projected onto a plurality of detection areas of a detector, so that the charged particles collected from two different field areas in the plane of the object are projected onto different detection areas of the detector. In a specific embodiment of the method according to the present invention, filtering is performed according to the trajectory of the collected particles. Here, the concentrated particles are filtered for each detection area by means of a detector that includes a plurality of independent detection fields sensitive to the concentrated particles in each detection area.
當在該反射模式內操作該粒子束系統來檢查不導電物件時,因為該部分束的主要粒子並不會穿入該物件內,因此在合適選取輻射參數的情況下,幾乎可完全避免由於該入射主要束造成該物件局部帶電。若該物件電位改變,則可決定以消失動能落在該物件表面上的該等主要粒子之該物件電位。結果,可決定該物件電荷的電位。若在該物件表面的多個不同點上執行此動作,則可決定在該物件表面附近的該電位外型。如上述該等相互作用產物過濾之結果,更可能決定該等相互作用產物的軌跡。該等軌跡允許推斷出該物件表面附近內該局部電位外型的形式,並從此可推斷出該物件表面的局部拓撲。在該表面的「非接觸」感應之後,就可利用電荷補償方法大幅分配。尤其是,利用改變參數,像是該多束粒子束系統的物件電位或焦點位置,可從複數個資料記錄以較高精準度來決定該樣本拓撲。因此,該方法也可包含改變該物件電位、決定該物件表面附近內該電位外型,以及從該物件表面附近內該局部電位外型決定該物件表面的該局部拓撲之步驟。 When operating the particle beam system in the reflection mode for the examination of non-conductive objects, local charging of the object due to the incident main beam can be almost completely avoided if the radiation parameters are suitably chosen, since the primary particles of the partial beam do not penetrate into the object. If the object potential changes, the object potential of the primary particles falling on the surface of the object with vanishing kinetic energy can be determined. As a result, the potential of the object charge can be determined. If this is performed at a number of different points on the surface of the object, the potential profile in the vicinity of the object surface can be determined. As a result of the filtering of the interaction products as described above, it is further possible to determine the trajectories of the interaction products. The trajectories allow to infer the form of the local potential profile in the vicinity of the object surface and from this the local topology of the object surface. After the "non-contact" sensing of the surface, the charge compensation method can be used to distribute the charge. In particular, by changing parameters such as the object potential or the focus position of the multi-beam particle beam system, the sample topology can be determined with high accuracy from a plurality of data records. Therefore, the method can also include the steps of changing the object potential, determining the potential shape in the vicinity of the object surface, and determining the local topology of the object surface from the local potential shape in the vicinity of the object surface.
在使用多數粒子束系統進行一物件的微觀粒子檢查之方法的進一步具體實施例中,由於該入射主要束而從該物件發出的該等相互作用產物一開始以第一吸入場收集,並投射到一偵測器的複數個偵測區域上,如此從兩不同場區域發出的該等相互作用產物都入射至該偵測器的不同偵測區域上。因此,由於該等入射主要粒子束而從該物件發出的該等相 互作用產物借助於與該第一吸入場不同的一第二吸入場來收集。由該第二吸入場收集的該等相互作用產物接著也依序投射至一偵測器的複數個偵測區域上,如此從該物件的兩不同場區域發出的該等第二粒子投射至該偵測器的不同偵測區域上。接著,屬於不同吸入場但是在該相同偵測區域內的該等偵測器信號利用計算彼此結合,如此產生充滿該物件拓撲效應的資料信號,接著用此信號產生影像與描繪影像。此方法可類似針對三、四或多個不同吸入場執行,以便在依照計算結合時達到更高精準度。若該吸入場可進入該物件,此方法也可用於該物件表面底下的影像結構,這在個別影像當中看不見。 In a further specific embodiment of a method for performing microscopic particle inspection of an object using a multi-particle beam system, the interaction products emitted from the object due to the incident primary beam are initially collected with a first suction field and projected onto a plurality of detection regions of a detector, so that the interaction products emitted from two different field regions are incident on different detection regions of the detector. Therefore, the interaction products emitted from the object due to the incident primary particle beams are collected with the aid of a second suction field different from the first suction field. The interaction products collected by the second suction field are then also sequentially projected onto a plurality of detection regions of a detector, so that the second particles emitted from two different field regions of the object are projected onto different detection regions of the detector. The detector signals belonging to different suction fields but within the same detection area are then combined computationally, thus generating a data signal full of the topological effects of the object, which is then used to generate and depict the image. This method can be performed similarly for three, four or more different suction fields in order to achieve higher accuracy when combined computationally. If the suction field can enter the object, this method can also be used to image structures beneath the surface of the object, which are not visible in the individual images.
在上述方法中,其中已經在不同吸入場內偵測到相互作用產物,在該等相互產物的偵測之前也可根據其個別軌跡來額外執行該等相互作用產物的過濾。如上述,可用傅立葉過濾在具有一圓形孔徑或環形孔徑光欄(對相互作用產物而言透明)的交錯平面內實施過濾。另外並且如已經進一步說明,借助於一偵測器,該偵測器具有對相互作用產物敏感的複數個相互獨立之偵測場,針對每一偵測區域來實施該等相互作用產物的過濾。 In the above method, in which interaction products are detected in different inhalation fields, a filtering of the interaction products according to their individual trajectories can also be additionally performed before their detection. As described above, the filtering can be carried out by Fourier filtering in staggered planes with a circular aperture or annular aperture light barrier (transparent for the interaction products). In addition and as already further described, the filtering of the interaction products is carried out for each detection area by means of a detector having a plurality of mutually independent detection fields sensitive to the interaction products.
1:粒子束系統 1: Particle beam system
3:主要粒子束 3: Main particle beam
5:位置 5: Location
7:物件 7: Objects
9:第二粒子束 9: Second particle beam
10:控制器 10: Controller
11:粒子束路徑 11: Particle beam path
100:物鏡系統 100:Objective system
101:第一平面 101: First plane
102:物鏡 102:Objective lens
103:矩形場 103: Rectangular field
200:偵測器系統 200: Detector system
205:投影透鏡 205: Projection lens
208:過濾裝置 208: Filter device
209:粒子多偵測器 209: Particle multi-detector
210:第一進一步粒子束透鏡 210: First step particle beam lens
211:第二進一步粒子束透鏡 211: Second step particle beam lens
211:平面 211: Plane
213:位置、光欄 213: Position, light bar
214:交錯平面 214: Interlaced planes
215:偵測區域 215: Detection area
215a、215b、215c:偵測區域 215a, 215b, 215c: Detection area
215d、215e:偵測區域 215d, 215e: Detection area
216a、216b:偵測場 216a, 216b: Detection field
217:場 217: Field
220:中央區域 220: Central area
221、222:環形區段 221, 222: Annular section
223:環形區段、周邊區域 223: Annular section, peripheral area
230、231、232、233、235、236:進一步粒子束透鏡 230, 231, 232, 233, 235, 236: Further particle beam lenses
237、234:光欄 237, 234: light bar
238:第一交錯平面 238: First intersecting plane
239:第二交錯平面 239: Second interlaced plane
240、241、242、244:偏轉系統 240, 241, 242, 244: Deflection system
300:粒子束產生設備 300: Particle beam generation equipment
301:粒子來源 301: Particle source
303:準直透鏡 303: Collimating lens
305:多孔徑配置 305:Multi-aperture configuration
307:場透鏡 307: Field lens
309:發散粒子束 309: Divergent particle beam
311:粒子束 311: Particle beam
313:多孔板 313: porous plate
315:孔徑 315: aperture
317:中央點 317: Central point
319:場 319: Field
323:粒子束焦點 323: Particle beam focus
325:平面 325: Plane
400:粒子束開關 400: Particle beam switch
515c、515d:強度分佈 515c, 515d: Intensity distribution
515e:強度分佈 515e:Intensity distribution
600:成像能量過濾器 600: Imaging energy filter
601:第一輸入側平面 601: First input side plane
602:輸出影像平面 602: Output image plane
603:第二輸入側平面 603: Second input side plane
604:第二輸出側平面 604: Second output side plane
700:分散生產元件 700: Distributed production components
801、802:第一雙偏轉系統 801, 802: The first double deflection system
803、804:第二雙偏轉系統 803, 804: Second double deflection system
803a、803b:孔徑 803a, 803b: aperture
810:帶電區域 810:Electrified area
811、812、813、814、815、817、818:偵測區域 811, 812, 813, 814, 815, 817, 818: Detection area
811a、812a、818a:偵測區域 811a, 812a, 818a: Detection area
901:第一輻射 901: The First Fallout
902:收集第一相互作用產物 902: Collect the first interaction product
903:第二輻射 903: Second Fallout
904:收集第二相互作用產物 904: Collect the second interaction product
905:評估 905:Evaluation
906:內含拓撲效果的影像資訊 906: Image information containing topological effects
底下根據圖式,解釋前述與進一步具體實施例的細節。圖式詳述:圖1顯示多束粒子束儀器的具體實施例示意圖。 The following is an explanation of the details of the above and further specific embodiments based on the drawings. Detailed description of the drawings: FIG1 shows a schematic diagram of a specific embodiment of a multi-beam particle beam instrument.
圖2顯示第一具體實施例內一偵測器系統的示意圖。 FIG2 shows a schematic diagram of a detector system in the first specific embodiment.
圖3顯示具有環形孔徑的光欄之俯視圖。 Figure 3 shows a top view of a light bar with an annular aperture.
圖4顯示一偵測器系統的第二具體實施例示意圖。 FIG4 shows a schematic diagram of a second specific embodiment of a detector system.
圖5顯示一偵測器系統的進一步具體實施例示意圖。 FIG5 shows a schematic diagram of a further specific embodiment of a detector system.
圖6顯示具有圓形孔徑的光欄之俯視圖。 Figure 6 shows a top view of a light bar with circular apertures.
圖7顯示具有一偵測器,其具有許多偵測場用於每一偵測區域,的一 偵測器系統之具體實施例示意圖。 FIG7 shows a schematic diagram of a specific embodiment of a detector system having a detector with a plurality of detection fields for each detection area.
圖8顯示含許多偵測區域,而該等區域含入射在該等偵測區域上的該等相互作用產物強度分佈(以示範方式顯示)之一偵測器的俯視圖。 FIG8 shows a top view of a detector having a number of detection regions containing the intensity distributions of the interaction products incident on the detection regions (shown in an exemplary manner).
圖9顯示含許多偵測區域,而該等區域含入射在該等偵測區域上的該等相互作用產物強度分佈(以示範方式顯示)之一偵測器的俯視圖。 FIG9 shows a top view of a detector having a number of detection regions containing the intensity distributions of the interaction products incident on the detection regions (shown in an exemplary manner).
圖10顯示含一能量過濾器的一偵測器系統之示意圖。 FIG10 shows a schematic diagram of a detector system including an energy filter.
圖11顯示含一分散元件的一偵測器系統之示意圖。 Figure 11 shows a schematic diagram of a detector system including a dispersed element.
圖12顯示含複數個亮場孔徑與暗場孔徑的一多重光欄之俯視圖。 Figure 12 shows a top view of a multiple lightbar with multiple bright field apertures and dark field apertures.
圖13顯示一偵測器系統的進一步具體實施例示意圖。 FIG13 shows a schematic diagram of a further specific embodiment of a detector system.
圖14顯示含許多偵測區域,而該等區域含在物件帶電情況下入射在該等偵測區域上的該等相互作用產物強度分佈(以示範方式顯示)之一偵測器的俯視圖。 FIG14 shows a top view of a detector having a number of detection regions containing the intensity distribution of the interaction products incident on the detection regions when the object is charged (shown in an exemplary manner).
圖15顯示來自圖14並且含偵測場與偵測區域之間已修改分配的該偵測器之進一步俯視圖。 FIG15 shows a further top view of the detector from FIG14 with a modified allocation between detection fields and detection areas.
圖16顯示放大拓撲效應的方法流程圖。 FIG16 shows a flow chart of a method for amplifying topological effects.
圖1為使用許多粒子束的粒子束系統1之示意圖。粒子束系統1產生複數個粒子束,入射在要檢查的物件上,以便在此產生相互作用產物,例如第二電子,這些相互作用產物從該物件發出並接著被偵測到。粒子束系統1為一種掃描式電子顯微鏡(SEM,scanning electron microscope),其使用複數個主要粒子束3撞擊物件7表面上複數個位置5,並且在此產生複數個空間相隔電子束點。要檢查的物件7可為任何類型,並且例如包含一半導體晶圓、一生物樣本以及小型化元件的配置等等。物件7的該表面排列在一物鏡系統100的物鏡102之第一平面101(物件平面)內。 FIG. 1 is a schematic diagram of a particle beam system 1 using a plurality of particle beams. The particle beam system 1 generates a plurality of particle beams that are incident on an object to be inspected so as to generate interaction products therein, such as second electrons, which are emitted from the object and then detected. The particle beam system 1 is a scanning electron microscope (SEM) that uses a plurality of primary particle beams 3 to impact a plurality of locations 5 on the surface of an object 7 and generate a plurality of spatially spaced electron beam spots therein. The object 7 to be inspected may be of any type and may include, for example, a semiconductor wafer, a biological sample, and a configuration of miniaturized components. The surface of the object 7 is arranged in a first plane 101 (object plane) of an objective lens 102 of an objective lens system 100.
圖1內的放大區段I1顯示物件平面101的俯視圖,內含形成於第一平面101內的撞擊位置5之一般矩形場103。在圖1內,撞擊位置的數量為25,形成一5 x 5場103。為了簡化例示,撞擊位置數量25為小數量選擇。尤其是,粒子束或撞擊位置的數量可選擇大一點,像是例如20 x 30、100 x 100等。 The enlarged section I1 in FIG. 1 shows a top view of the object plane 101, which contains a generally rectangular field 103 of impact locations 5 formed in the first plane 101. In FIG. 1, the number of impact locations is 25, forming a 5 x 5 field 103. For the sake of simplicity of illustration, the number of impact locations 25 is chosen to be a small number. In particular, the number of particle beams or impact locations can be chosen to be larger, such as, for example, 20 x 30, 100 x 100, etc.
在例示的具體實施例內,撞擊位置5的場103大體上為一般矩形場,在相鄰撞擊位置之間具有恆定距離P1。距離P1的示範值為1微米、10微米或40微米。不過,場103也可具有不同對稱性,像是例如六角對稱。 In the illustrated embodiment, the field 103 of the impact locations 5 is a generally rectangular field with a constant distance P1 between adjacent impact locations. Exemplary values for the distance P1 are 1 micron, 10 microns or 40 microns. However, the field 103 may also have a different symmetry, such as, for example, hexagonal symmetry.
在第一平面101內形成的粒子束點直徑並不大,此直徑的示範值為1奈米、5奈米、10奈米、100奈米以及200奈米。利用物鏡系統100實施用於形成束點5的粒子束3之聚焦。 The particle beam spot diameter formed in the first plane 101 is not large, and exemplary values of the diameter are 1 nm, 5 nm, 10 nm, 100 nm, and 200 nm. The objective lens system 100 is used to focus the particle beam 3 that forms the beam spot 5.
該等主要粒子撞擊在該物件上產生相互作用產物,例如第二電子、背散射電子或因為其他因素而經歷逆向運動的主要粒子,其從物件7的表面或從第一平面101冒出。從物件7表面冒出的該等相互作用產物由物鏡102形成第二電子束9。粒子束系統1提供一粒子束路徑11,以便將多個第二粒子束9送至偵測器系統200。偵測器系統200包含粒子光學設備,其具有一投影透鏡205,將第二粒子束9引導至一粒子多偵測器209上。 The primary particles hit the object to generate interaction products, such as second electrons, backscattered electrons, or primary particles that undergo reverse motion due to other factors, which emerge from the surface of the object 7 or from the first plane 101. The interaction products emerging from the surface of the object 7 are formed into a second electron beam 9 by the objective lens 102. The particle beam system 1 provides a particle beam path 11 to send a plurality of second particle beams 9 to the detector system 200. The detector system 200 includes a particle optical device having a projection lens 205 to guide the second particle beam 9 to a particle multi-detector 209.
圖1內的區段I2顯示平面211的平面圖,其中排列粒子多偵測器209的個別偵測區,其上第二粒子束9撞擊位置213。撞擊位置213位於一場217內,彼此之間具有一常規距離P2。距離P2的示範值為10微米、100微米以及200微米。 Section I2 in Fig. 1 shows a plan view of a plane 211 in which the individual detection areas of the particle multi-detector 209 are arranged, on which the second particle beam 9 impacts positions 213. The impact positions 213 are located in a field 217 at a regular distance P2 from each other. Exemplary values of the distance P2 are 10 microns, 100 microns and 200 microns.
粒子束產生設備300內產生主要粒子束3,該設備包含至少一個粒子來源301(例如一電子來源)、至少一個準直透鏡303、一個多孔徑配置305以及一個場透鏡307。粒子來源301產生一發散粒子束309,其利用準直透鏡303準直,或大幅準直,以便形成粒子束311照射多孔徑配置305。 The primary particle beam 3 is generated in a particle beam generating device 300, which includes at least one particle source 301 (e.g., an electron source), at least one collimating lens 303, a multi-aperture configuration 305, and a field lens 307. The particle source 301 generates a divergent particle beam 309, which is collimated or substantially collimated by the collimating lens 303 to form a particle beam 311 to irradiate the multi-aperture configuration 305.
圖1內的區段I3顯示多孔徑配置305的平面圖。多孔徑配置305包含一多孔板313,其內形成複數個開口或孔徑315。孔徑315的中央點317配置在一場319內,其對應至物件平面101內粒子束點5所形成的場103。孔徑315的中央點317彼此之間的間隔P3可具有大約5微米、100微米以及200微米之示範值。孔徑315的直徑D小於該等孔徑中央點間之距離P3,該直徑D的示範值為0.2 x P3、0.4 x P3和0.8 x P3。 Section I3 in FIG. 1 shows a plan view of a multi-aperture configuration 305. The multi-aperture configuration 305 includes a multi-aperture plate 313 in which a plurality of openings or apertures 315 are formed. The center points 317 of the apertures 315 are arranged in a field 319 corresponding to the field 103 formed by the particle beam spot 5 in the object plane 101. The spacing P3 between the center points 317 of the apertures 315 can have exemplary values of about 5 microns, 100 microns, and 200 microns. The diameter D of the aperture 315 is smaller than the distance P3 between the center points of the apertures, and exemplary values of the diameter D are 0.2 x P3, 0.4 x P3, and 0.8 x P3.
照射粒子束311的粒子通過孔徑315,並形成粒子束3。該板313會捕捉撞擊在板313上的照射粒子束311之粒子,因此不會用於形成粒子束3。 Particles of the irradiation particle beam 311 pass through the aperture 315 and form the particle beam 3. The plate 313 captures the particles of the irradiation particle beam 311 that hit the plate 313 and are therefore not used to form the particle beam 3.
多孔徑配置305因為所施加的電場將每一粒子束3聚焦,如此在平面325內形成粒子束焦點323。藉由範例,粒子束焦點323的直徑可為例如10奈米、100奈米以及1微米。 The multi-aperture configuration 305 focuses each particle beam 3 due to the applied electric field, thus forming a particle beam focus 323 in a plane 325. By way of example, the diameter of the particle beam focus 323 can be, for example, 10 nanometers, 100 nanometers, and 1 micrometer.
場透鏡307和物鏡102將用於讓平面325(其中形成焦點)成像的第一成像粒子光學設備提供於第一平面101上,如此在此形成撞擊位置5的一場103或粒子束點。對於物件7的表面配置在該第一平面內之範疇,該等粒子束據此形成於該物件表面上。 The field lens 307 and the objective lens 102 provide a first imaging particle optical device for imaging the plane 325 (in which the focus is formed) on the first plane 101, so that a field 103 or particle beam spot is formed here at the impact location 5. For the extent that the surface of the object 7 is arranged in the first plane, the particle beams are formed accordingly on the surface of the object.
物鏡102和投影透鏡配置205提供一第二成像粒子光學設備,用於將第一平面101成像至偵測平面211上。如此,物鏡102是一個同時為該第一以及該第二粒子光學設備的部分的透鏡,而場透鏡307只屬於該第一粒子光學設備,並且投影透鏡205只屬於該第二粒子光學設備。 The objective lens 102 and the projection lens arrangement 205 provide a second imaging particle optical device for imaging the first plane 101 onto the detection plane 211. Thus, the objective lens 102 is a lens that is part of both the first and the second particle optical device, while the field lens 307 belongs only to the first particle optical device and the projection lens 205 belongs only to the second particle optical device.
粒子束開關400配置於多孔徑配置305與物鏡系統100之間該第一粒子光學設備之該粒子束路徑內。粒子束開關400也是物鏡系統100與偵測器系統200之間該粒子束路徑內該第二粒子光學設備之零件。 The particle beam switch 400 is arranged in the particle beam path of the first particle optical device between the multi-aperture arrangement 305 and the objective system 100. The particle beam switch 400 is also a part of the second particle optical device in the particle beam path between the objective system 100 and the detector system 200.
從國際專利申請案WO 2005/024881、WO 2007/028595、WO 2007/028596、WO 2011/124352和WO 2007/060017當中,以及具有申請編號DE 10 2013 016 113.4和DE 10 2013 014 976.2的德國專利申請案當 中,可獲得本文內所使用有關這種多束粒子束系統以及組件的進一步資訊,例如粒子來源、多孔徑平板以及透鏡,這些申請案的完整揭露事項都在此完整併入當成本申請案的參考。 Further information on such multi-beam particle beam systems and components used herein, such as particle sources, multi-aperture plates and lenses, can be obtained from the international patent applications WO 2005/024881, WO 2007/028595, WO 2007/028596, WO 2011/124352 and WO 2007/060017 and from the German patent applications with the application numbers DE 10 2013 016 113.4 and DE 10 2013 014 976.2, the complete disclosures of which are hereby fully incorporated by reference into the present application.
更進一步,偵測器系統200具有一過濾裝置208,借助於此裝置,從物件7或第一平面101發出的該等相互作用產物(例如電子束9)依照其軌跡過濾。底下基於圖2至圖15,更詳細說明含不同過濾裝置的偵測器裝置範例。 Furthermore, the detector system 200 has a filter device 208, by means of which the interaction products (e.g., electron beam 9) emitted from the object 7 or the first plane 101 are filtered according to their trajectory. Examples of detector devices with different filter devices are described in more detail below based on FIGS. 2 to 15 .
該多束粒子束系統更進一步具有一控制器10,其具體實施用於控制該多束粒子束系統的該等個別粒子光學組件,以及用於評估與分析多偵測器209所獲得的該等偵測器信號。更進一步,控制器10具體實施成根據多偵測器209產生的該等偵測器信號,在一再生裝置,例如一顯示器,產生物件表面的影像。 The multi-beam particle beam system further has a controller 10, which is specifically implemented for controlling the individual particle optical components of the multi-beam particle beam system and for evaluating and analyzing the detector signals obtained by the multi-detector 209. Further, the controller 10 is specifically implemented to generate an image of the surface of the object on a reproduction device, such as a display, based on the detector signals generated by the multi-detector 209.
圖2內的偵測器系統200具有兩個進一步粒子束透鏡210、211,加上投影透鏡205以及多偵測器209。第一進一步粒子束透鏡210在一交錯平面214內形成交錯。在此交錯平面214內,該等相互作用產物在不同區域內離開第一平面101(物件平面)的軌跡都重疊。第二額外粒子束透鏡211以其聚焦平面實質上在第一額外粒子束透鏡210的交錯平面214內之方式來操作。該等相互作用產物從第一平面101中許多區域內發出,然後彼此分別在第二額外粒子束透鏡211之後傳播,並且利用投影透鏡205投射至多偵測器209的許多偵測區域215。 The detector system 200 in FIG. 2 has two further particle beam lenses 210, 211, plus a projection lens 205 and a multi-detector 209. The first further particle beam lens 210 is staggered in a staggered plane 214. In this staggered plane 214, the trajectories of the interaction products leaving the first plane 101 (object plane) in different regions overlap. The second additional particle beam lens 211 is operated in such a way that its focusing plane is substantially in the staggered plane 214 of the first additional particle beam lens 210. The interaction products are emitted from many regions in the first plane 101, and then propagate behind the second additional particle beam lens 211, and are projected to many detection regions 215 of the multi-detector 209 by the projection lens 205.
一光欄213,在其幫助之下可根據該等相互作用產物的個別軌跡,依照需求來過濾,該光欄配置在交錯平面214內或交錯平面214附近,即是兩額外粒子束透鏡210與211之間。圖3和圖6內描繪兩示範光欄213。圖3內描繪的光欄213具有一中央區域220以及一周邊區域223,該等相互作用產物都無法透射過這些區域。在中央區域220與周邊區域223之間,光欄213具有一環形區域,該等相互作用產物可透射過此區域,在 此描繪具體實施例內,該區域由三個環形區段221、222、223所組成。該網存在於環形區段221、222、223之間,將該等環形區段彼此分隔,僅用來將中央區域220與周圍區域223彼此連接。借助於一環形光欄,可根據該等相互作用產物從物件7冒出或離開第一平面101時的開始角度來過濾。因此,只有在一特定角度區域內離開第一平面101的這些相互作用產物,才能通過三個環形區域221、222、223中對於該等相互作用產物而言透明之一者內的該光欄。借助於這種光欄,則因為該等相互作用產物(例如第二電子)相對於物件表面7邊緣上的該等入射部分束,主要在較大的入射角度之下冒出,因此可提高該拓撲對比。 A light barrier 213, with the help of which the interaction products can be filtered as required according to their individual trajectories, is arranged in or near the interlaced plane 214, i.e. between the two additional particle beam lenses 210 and 211. Two exemplary light barriers 213 are depicted in Figures 3 and 6. The light barrier 213 depicted in Figure 3 has a central region 220 and a peripheral region 223, through which the interaction products cannot pass. Between the central region 220 and the peripheral region 223, the light barrier 213 has an annular region, through which the interaction products can pass, which in the depicted embodiment consists of three annular segments 221, 222, 223. The network exists between the annular segments 221, 222, 223, separating the annular segments from each other and only serves to connect the central area 220 with the peripheral area 223. With the help of an annular light barrier, the interaction products can be filtered according to the starting angle when they emerge from the object 7 or leave the first plane 101. Therefore, only the interaction products that leave the first plane 101 within a certain angle range can pass through the light barrier in one of the three annular regions 221, 222, 223 that is transparent to the interaction products. With the help of such a light barrier, the topological contrast can be improved because the interaction products (such as second electrons) mainly emerge under larger incident angles relative to the incident partial beams on the edge of the object surface 7.
因為光欄213配置在該偵測器系統的一交錯平面214內,則對於該多粒子束系統的所有部分束只需要單一個環形光欄。如此,由該粒子束系統的所有部分束從物件7產生的該等相互作用產物都經歷相同的過濾。 Since the light barrier 213 is arranged in a staggered plane 214 of the detector system, only a single annular light barrier is required for all partial beams of the multi-particle beam system. Thus, the interaction products generated from the object 7 by all partial beams of the particle beam system undergo the same filtering.
在圖2的具體實施例內,兩進一步粒子束透鏡210、211形成與光欄213與投影透鏡205一起的一投影系統。 In the specific embodiment of FIG. 2 , two further particle beam lenses 210 , 211 form a projection system together with the light barrier 213 and the projection lens 205 .
圖6內的光欄213只具有一圓形孔徑214,可讓該等相互作用產物透射。借助於圖2內偵測器系統200的交錯平面214內這種「亮場光欄」,可避免偵測器209的該等偵測區域間之該等偵測信號干擾。當從第一平面101內一場區域發出的相互作用產物撞擊在未指派給此場區域的一偵測區域215上,可建立偵測區域215之間的干擾。借助於圖6內的亮場光欄213,可藉由適當選擇圓形孔徑214的孔徑直徑來確定,已經過濾由於其軌跡而應該撞擊在與對應場區域無關的一偵測區域上之所有相互作用產物,並且已經由光欄213所吸收。當從該物件發出時已經結合大開始角度以及大開始能量的這些相互作用產物之軌跡,對於該徑向方向而言,在該交錯平面的外側區域內延伸。利用一亮場光欄可減少相鄰粒子束之間的干擾。再者,該等對比,例如邊緣對比,會受到一亮場光欄的影響。 The light barrier 213 in FIG6 has only one circular aperture 214 through which the interaction products can be transmitted. By means of such a "bright field light barrier" in the staggered plane 214 of the detector system 200 in FIG2, interference of the detection signals between the detection areas of the detector 209 can be avoided. When an interaction product emanating from a field area in the first plane 101 hits a detection area 215 not assigned to this field area, interference between the detection areas 215 can be established. With the aid of the bright field light bar 213 in FIG. 6 , it can be determined by a suitable choice of the aperture diameter of the circular aperture 214 that all interaction products which, due to their trajectory, should impinge on a detection region independent of the corresponding field region have been filtered out and absorbed by the light bar 213. The trajectories of these interaction products, which when emitted from the object already combine a large start angle and a large start energy, extend in the outer region of the intersecting plane with respect to the radial direction. The use of a bright field light bar reduces interference between adjacent particle beams. Furthermore, the contrasts, such as edge contrasts, are affected by a bright field light bar.
為了可產生不同的過濾效果,光欄213用可交換方式配置在偵測器系統200內,並且可提供用於具有不同孔徑直徑、環直徑與環寬度的複數個光欄。針對只含一個光欄孔徑的一可交換光欄之替代,也可使用多個光欄。圖12內描繪含複數個光欄孔徑803a-803d的一多光欄803之平面圖。在圖12內描繪的該多光欄中,兩光欄孔徑803a、803b之每一者都具有對相互作用產物而言透明的環形孔徑,其中該等環形孔徑的內直徑與外直徑都不同。兩進一步光欄孔徑803c、803d為圓形,並且具有不同的孔徑直徑。然而,可以有含更多、更少、不同光欄孔徑的其他光欄配置。 In order to produce different filtering effects, the light bars 213 are arranged in the detector system 200 in an interchangeable manner, and a plurality of light bars with different aperture diameters, ring diameters and ring widths can be provided. Instead of an interchangeable light bar containing only one light bar aperture, a plurality of light bars can also be used. FIG. 12 depicts a plan view of a multi-light bar 803 containing a plurality of light bar apertures 803a-803d. In the multi-light bar depicted in FIG. 12, each of the two light bar apertures 803a, 803b has an annular aperture transparent to the interaction products, wherein the inner diameter and the outer diameter of the annular apertures are different. The two further light bar apertures 803c, 803d are circular and have different aperture diameters. However, there may be other light bar configurations with more, fewer, or different light bar apertures.
圖13顯示具有一偵測器系統的一示範具體實施例,其設計類似於圖2內的設計。該偵測器系統再一次包含一第一額外粒子束透鏡210,其在一交錯平面內產生交錯。一第二額外粒子束透鏡211再次以其聚焦平面實質上與第一額外粒子束透鏡210所形成的該交錯平面重疊之方式來操作。該等相互作用產物從第一平面101中許多區域內發出,然後彼此分別在第二額外粒子束透鏡211之後傳播,並且利用投影透鏡205投射至多偵測器209的許多偵測區域215。除了圖2內的該示範具體實施例,在圖13的該示範具體實施例內,在第一額外粒子束透鏡210與該交錯平面之間配置一第一雙偏轉系統801、802,並且在該交錯平面與該等第二進一步粒子束透鏡之間配置一第二雙偏轉系統803、804。如圖12內描繪的示範方式,一多光欄803配置在該交錯平面內。借助於兩個雙偏轉系統801、802、803、804,在此示範具體實施例內可選擇多光欄803的一個該等孔徑,其中圖13內只描繪該多光欄的兩個孔徑803a、803b。因此,根據其激發,借助於該等雙偏轉系統,可在該多光欄幫助之下於不同對比之間切換。因此,兩雙偏轉系統801、802、804、805當成孔徑選擇器。 FIG. 13 shows an exemplary embodiment with a detector system, the design of which is similar to that of FIG. 2 . The detector system again comprises a first additional particle beam lens 210, which generates an interlacing in an interlacing plane. A second additional particle beam lens 211 again operates in such a way that its focusing plane substantially overlaps the interlacing plane formed by the first additional particle beam lens 210. The interaction products are emitted from a plurality of regions in the first plane 101, and then propagate behind the second additional particle beam lens 211, respectively, and are projected to a plurality of detection regions 215 of the multi-detector 209 by means of a projection lens 205. In addition to the exemplary embodiment of FIG. 2 , in the exemplary embodiment of FIG. 13 , a first double deflection system 801, 802 is arranged between the first additional particle beam lens 210 and the interlaced plane, and a second double deflection system 803, 804 is arranged between the interlaced plane and the second further particle beam lenses. As in the exemplary manner depicted in FIG. 12 , a multi-light barrier 803 is arranged in the interlaced plane. With the aid of the two double deflection systems 801, 802, 803, 804, one of the apertures of the multi-light barrier 803 can be selected in this exemplary embodiment, wherein only two apertures 803a, 803b of the multi-light barrier are depicted in FIG. Therefore, depending on its activation, with the help of the dual deflection systems, it is possible to switch between different contrasts with the help of the multi-light bar. Therefore, the two dual deflection systems 801, 802, 804, 805 act as aperture selectors.
在圖13的具體實施例內,兩進一步粒子束透鏡210、211形成具有光欄213、雙偏轉系統801、802、804、805以及投影透鏡205的一投影系統。 In the specific embodiment of FIG. 13 , two further particle beam lenses 210 and 211 form a projection system having a light barrier 213, a double deflection system 801, 802, 804, 805 and a projection lens 205.
除了投影透鏡205與多偵測器209以外,圖4內的偵測器系統200具有六個進一步粒子束透鏡230、231、232、233、235、236。兩第一進一步粒子束透鏡230、231在第一交錯平面238內形成第一交錯,兩後續進一步粒子束透鏡232、233在第二交錯平面239內形成第二交錯。兩進一步粒子束透鏡235、236接著第二交錯平面239重新收集從第二交錯平面239發出的該等相互作用產物之該等粒子束,如此借助於多偵測器209上的投影透鏡205,再次將從第一平面101內許多場區域發出的該等相互作用產物投射至多偵測器209的許多偵測區域215上。 In addition to the projection lens 205 and the multi-detector 209, the detector system 200 in FIG4 has six further particle beam lenses 230, 231, 232, 233, 235, 236. The two first further particle beam lenses 230, 231 form a first interlacing in a first interlacing plane 238, and the two subsequent further particle beam lenses 232, 233 form a second interlacing in a second interlacing plane 239. The two further particle beam lenses 235 and 236 then recollect the particle beams of the interaction products emitted from the second interlaced plane 239 at the second interlaced plane 239, and thus, with the help of the projection lens 205 on the multi-detector 209, the interaction products emitted from the many field regions in the first plane 101 are projected onto the many detection regions 215 of the multi-detector 209 again.
在偵測器系統200的此具體實施例內,在該第一和該第二交錯平面238與239內可同時使用兩不同的光欄237、234。藉由範例,圖6內描繪的亮場光欄213可配置在第一交錯平面238內,並且圖3內所描繪含一環形孔徑的該光欄可配置在第二交錯平面239內。同時在此具體實施例內,執行根據第一平面101內該開始角度的偵測區域215與該等相互作用產物的目標過濾之間干擾之抑制。 In this embodiment of the detector system 200, two different light bars 237, 234 can be used simultaneously in the first and second interlaced planes 238 and 239. By way of example, the bright field light bar 213 depicted in FIG. 6 can be arranged in the first interlaced plane 238, and the light bar with an annular aperture depicted in FIG. 3 can be arranged in the second interlaced plane 239. At the same time, in this embodiment, suppression of interference between the detection area 215 according to the starting angle in the first plane 101 and the target filtering of the interaction products is performed.
在此,注意力集中在兩光欄237、234也可用一可交換方式來配置,如此含環形孔徑的一光欄配置在第一交錯平面238內,並且含一中央孔徑的一光欄配置在第二交錯平面239內。 Here, attention is focused on the fact that the two light bars 237, 234 can also be arranged in an interchangeable manner, so that a light bar with an annular aperture is arranged in the first intersecting plane 238, and a light bar with a central aperture is arranged in the second intersecting plane 239.
利用改變進一步粒子束透鏡230、231、232、233、234、235的激發,可獨立設定兩交錯平面238、239內該等相互作用產物彼此的軌跡。利用改變交錯平面238、239內的該等軌跡,其可模擬不同的光欄半徑與光欄直徑,因此不需要以機械方式交換光欄。當進入偵測器系統200時與當進入投影透鏡205時,該等軌跡可在此情況下維持恆等,如此可維持第一平面101內該等場區域與多偵測器209的該等偵測區域間之關聯性。由第一平面101內相互作用產物的所有粒子束所傳輸的該物件場維持不變,並在處理中維持恆等。 By changing the excitation of the further particle beam lenses 230, 231, 232, 233, 234, 235, the trajectories of the interaction products in the two intersecting planes 238, 239 can be set independently of each other. By changing the trajectories in the intersecting planes 238, 239, different beam radii and beam diameters can be simulated, so that the beams do not need to be exchanged mechanically. When entering the detector system 200 and when entering the projection lens 205, the trajectories can in this case remain constant, so that the correlation between the field areas in the first plane 101 and the detection areas of the multi-detector 209 can be maintained. The object field transmitted by all particle beams of the interaction products in the first plane 101 remains constant and remains constant during the process.
在此情況下,進一步粒子束透鏡230、231、232、233、235、 236可為磁性透鏡或靜電透鏡。 In this case, the particle beam lenses 230, 231, 232, 233, 235, and 236 may be magnetic lenses or electrostatic lenses.
在圖4的具體實施例內,六個進一步粒子束透鏡230、231、232、233、235、236與兩光欄234、237與投影透鏡205一起形成一投影系統。 In the specific embodiment of FIG. 4 , six further particle beam lenses 230, 231, 232, 233, 235, 236 and two light barriers 234, 237 together with the projection lens 205 form a projection system.
圖5內偵測器系統200的具體實施例具有與圖4內偵測器系統200非常類似的設計。尤其是,圖5內的偵測器系統200除了投影透鏡205以及多偵測器209以外,再次具有總共六個進一步粒子束透鏡230、231、232、233、235、236,在進一步粒子束透鏡之間,頭兩個進一步粒子束透鏡230、231再次在第一交錯平面238內產生第一交錯,並且兩後續進一步粒子束透鏡232、233再次在第二交錯平面239內產生第二交錯。除了圖4內的具體實施例,在每一情況下,圖5內的偵測器系統200分別具有位於第一交錯平面238之前以及第一交錯平面238之後的一個偏轉系統240、244。偵測器系統200分別在第二交錯平面239之前與之後同樣具有一個偏轉系統241、242。針對分別在該個別交錯平面238、239之前與之後內,在其間分別具有一個光欄237、234的該等偏轉系統之不同激發結果,可放大多偵測器209所偵測該等信號的邊緣效應,並且可產生陰影效果。此處的重點在於利用分別配置在該交錯平面之前的偏轉系統244、241,讓該等相互作用產物的該等粒子束所經歷之偏轉,再度由配置在該個別交錯平面之後的偏轉系統240、242所補償。因為位於該等兩偏轉系統之間的該交錯平面分別彼此對齊,這表示配置在交錯平面之前的偏轉系統244、241與配置在該相同交錯平面之後的偏轉系統240、242,在一特定組態的情況下可產生一致的偏轉。 The specific embodiment of the detector system 200 in Figure 5 has a design very similar to the detector system 200 in Figure 4. In particular, the detector system 200 in Figure 5, in addition to the projection lens 205 and the multidetector 209, again has a total of six further particle beam lenses 230, 231, 232, 233, 235, 236, between which the first two further particle beam lenses 230, 231 again produce a first interlacing in a first interlacing plane 238, and the two subsequent further particle beam lenses 232, 233 again produce a second interlacing in a second interlacing plane 239. In addition to the specific embodiment in Fig. 4, the detector system 200 in Fig. 5 has in each case one deflection system 240, 244 respectively before the first interlacing plane 238 and after the first interlacing plane 238. The detector system 200 also has one deflection system 241, 242 respectively before and after the second interlacing plane 239. As a result of the different activation of the deflection systems respectively before and after the respective interlacing plane 238, 239, with a light bar 237, 234 in between, edge effects of the signals detected by the multi-detector 209 can be amplified and a shadow effect can be produced. The key point here is that the deflection experienced by the particle beams of the interaction products by the deflection systems 244, 241 respectively arranged before the stagger plane is compensated again by the deflection systems 240, 242 arranged after the respective stagger plane. Since the stagger planes between the two deflection systems are respectively aligned with each other, this means that the deflection systems 244, 241 arranged before the stagger plane and the deflection systems 240, 242 arranged after the same stagger plane can produce consistent deflections under a specific configuration.
利用記錄在該等交錯平面內具有不同偏轉角度的複數個影像,並且利用評估一控制器10內該等個別發生的陰影效果,可產生該樣本表面的3D資料記錄。 By recording a plurality of images with different deflection angles in the interlaced planes and by evaluating the individually occurring shading effects in a controller 10, a 3D data record of the sample surface can be generated.
偏轉系統240、244、241、242可分別具體實施為單一偏轉 系統或雙偏轉系統,不過單一偏轉系統已經足以應用大部分應用。 The deflection systems 240, 244, 241, 242 can be implemented as a single deflection system or a dual deflection system, respectively, but a single deflection system is sufficient for most applications.
在圖5的具體實施例內,六個進一步粒子束透鏡230、231、232、233、235、236與兩光欄237、238、偏轉系統240、244、241、241與投影透鏡205一起形成一投影系統。 In the specific embodiment of FIG. 5 , six further particle beam lenses 230, 231, 232, 233, 235, 236 together with two light barriers 237, 238, deflection systems 240, 244, 241, 241 and projection lens 205 form a projection system.
圖7顯示一偵測系統的一多偵測器209之進一步具體實施例俯視圖。此偵測器209也具有一相關偵測區域215a、215b、215c,用於平面101內每一場區域。然而,在此偵測器209內,每一偵測區域215a、215b、215c再次分成許多偵測場216a、216b,彼此獨立偵測。在圖7內,只描繪此偵測區域215a、215b分成彼此獨立偵測的偵測場216a、216b用於該等偵測區域的一個欄,含偵測區域215b和215c。再者,圖7內分別描繪20個偵測場216a、216b用於每一偵測區域215b、215c。然而,每一偵測區域215b、215c的偵測場216a、216b之數量也可不同;尤其是更多或更少偵測場可存在於每一偵測場。每一偵測區域的偵測場數較佳落在3至64的範圍內。該等偵測場的四邊或六角配置都有可能,不過其他對稱也可。在高測量速度並不重要的情況下,每一偵測區域的偵測場數也可顯著較多。 FIG7 shows a top view of a further specific embodiment of a multi-detector 209 of a detection system. This detector 209 also has an associated detection area 215a, 215b, 215c for each field area in the plane 101. However, in this detector 209, each detection area 215a, 215b, 215c is again divided into a plurality of detection fields 216a, 216b, which are detected independently of each other. In FIG7, only one column of the detection areas 215a, 215b divided into detection fields 216a, 216b for detecting independently of each other is depicted, including detection areas 215b and 215c. Furthermore, FIG. 7 depicts 20 detection fields 216a, 216b for each detection region 215b, 215c, respectively. However, the number of detection fields 216a, 216b in each detection region 215b, 215c may also be different; in particular, more or fewer detection fields may be present in each detection field. The number of detection fields in each detection region preferably lies in the range of 3 to 64. A quadrilateral or hexagonal configuration of the detection fields is possible, but other symmetries are also possible. In cases where a high measurement speed is not important, the number of detection fields in each detection region may also be significantly greater.
在偵測器系統200的此具體實施例內,借助於控制器10並未考慮將屬於相同偵測區域215b、215c的偵測場216a、216b之該等輸出信號用於後續評估中的該影像產生,或借助於屬於該相同偵測區域的許多偵測場之該等輸出信號藉由控制器10的計算,以合適方式彼此結合,只有當該等對應相互作用產物撞擊在多偵測器209上,才會根據該等相互作用產物的個別軌跡將其過濾。 In this specific embodiment of the detector system 200, the output signals of the detection fields 216a, 216b belonging to the same detection area 215b, 215c are not taken into account for the image generation in the subsequent evaluation by the controller 10, or the output signals of many detection fields belonging to the same detection area are combined with each other in a suitable manner by calculation of the controller 10, and only when the corresponding interaction products hit the multi-detector 209 are they filtered according to their individual trajectories.
每一偵測區域215a、215b、215c含許多偵測場216a、216c的一對應多偵測器209可用許多不同方式實施,這種多偵測器209的第一具體實施例可為具有上游閃爍器的CCD攝影機。然後該CCD攝影機的每一像素形成一偵測場216a、216b,然後複數個偵測場一起分別形成一個偵測區域215a、515b、215c。在其他具體實施例內,傳輸由該等相互作用產 物撞擊在該閃爍器上所產生光線的一光纖纜線可配置在一閃爍器與一偵測器之間。然後該光纖纜線具有至少一條光纖用於每一偵測場216a、216b。並且該偵測器類似具有一專屬偵測器或一專屬偵測器像素,用於每一偵測場。然而,另外,一對應偵測器209也可為一非常快像素電子偵測器,直接將入射電子(相互作用產物,第二電子)轉換成一電信號。在此情況下,每一偵測器像素也形成一偵測場。該等說明具體實施例也可組合。藉由範例,可將配置在閃爍器之後的光纖纜線引導至第一組偵測器,該群組中每一偵測區域只具有單一個偵測器。藉由配置在該閃爍器與該光纖纜線進入端之間的一分束器,可將該閃爍器內產生的其他光線部分引導至第二組偵測器,該群組中每一偵測區域都具有複數個偵測器。然後與該相同偵測區域相關聯的每一偵測器形成一偵測場。因為兩組偵測器都具有完全不同的偵測器數量,因此兩組偵測器可利用整個偵測器群組的對應不同時脈來讀取。因為第二組偵測器一般因為偵測器數量較多而具有較低時脈,則可獲得不需要高資料率的信號,例如該粒子束調整組件的信號,而可用第一組偵測器獲得用於該影像產生的信號。 A corresponding multi-detector 209 containing a plurality of detection fields 216a, 216c per detection region 215a, 215b, 215c can be implemented in many different ways. A first embodiment of such a multi-detector 209 can be a CCD camera with an upstream scintillator. Each pixel of the CCD camera then forms a detection field 216a, 216b, and the plurality of detection fields together then form a detection region 215a, 215b, 215c, respectively. In other embodiments, an optical fiber cable that transmits light generated by the interaction products impinging on the scintillator can be arranged between a scintillator and a detector. The optical fiber cable then has at least one optical fiber for each detection field 216a, 216b. And the detector similarly has a dedicated detector or a dedicated detector pixel for each detection field. However, in addition, a corresponding detector 209 can also be a very fast pixel electron detector, which directly converts the incident electron (interaction product, second electron) into an electrical signal. In this case, each detector pixel also forms a detection field. The specific embodiments described can also be combined. By way of example, the optical fiber cable arranged after the scintillator can be guided to a first group of detectors, each detection area in the group having only a single detector. By means of a beam splitter arranged between the scintillator and the fiber optic cable entry, the other part of the light generated in the scintillator can be directed to a second group of detectors, each detection area of which has a plurality of detectors. Each detector associated with the same detection area then forms a detection field. Since both groups of detectors have completely different numbers of detectors, the two groups of detectors can be read using the corresponding different clocks of the entire detector group. Since the second group of detectors generally has a lower clock due to the larger number of detectors, signals that do not require a high data rate, such as the signal of the particle beam conditioning assembly, can be obtained, while the first group of detectors can be used to obtain the signal used for the image generation.
圖8和圖9分別描繪對應多偵測器209的進一步平面圖,在該等偵測區域之內同時指出入射在該個別偵測區域上的該等相互作用產物個別粒子束之強度分佈。 FIG8 and FIG9 respectively depict further plan views corresponding to the multi-detector 209, and simultaneously indicate the intensity distribution of the individual particle beams of the interaction products incident on the individual detection regions within the detection regions.
若物鏡102、粒子束開關400以及投影透鏡205要絕對無像差,並且若該物件表面為平面並且無電荷,則從平面101內每一場區域發出的該等相互作用產物應由物鏡、粒子束開關400以及投影透鏡205所構成的該系統投射至偵測器209上,如此每一偵測區215內的強度分佈都旋轉對稱,如圖8內一偵測區域215e中的強度分佈515e所示。然而,由於許多效果,入射在個別偵測區域上的實際強度分佈會偏離此理想狀況。藉由範例,這種效果可為該物件表面的拓撲效果,其影響從該物件發出的該等第二電子之開始條件,或只是簡單的電荷效果。再者,偏離旋轉對稱的強 度分佈可發生在由於物鏡102、粒子束開關400與投影透鏡205內有像差之該等偵測區域內。圖9內用偵測區域215a內的交錯線515a來表示。若像差導致偏離該旋轉對稱在理想對焦情況下已知,則可用此資訊來產生一自動對焦信號。為此,可關於空間分佈分析在該相同偵測區域的該等個別偵測場內偵測到之該等相互作用產物以及從此發出的該等偵測器信號。若建構的強度分佈對稱偏離已知的所要形狀,則需要調整,例如重新對焦。當一偵測區域內的該強度分佈之對稱具有所要形狀,表示已經達成理想對焦。該偵測器上該等相互作用產物相對於所要位置或所要分佈的強度分佈之整體置換或變形允許關於該整體樣本外型來繪製結論,像是例如一樣本拼貼或一整體樣本充電。在此,若延伸超過一個獨立粒子束的場區域,則樣本屬性為整體屬性。 If the objective lens 102, the beam switch 400 and the projection lens 205 are absolutely aberration-free, and if the object surface is planar and charge-free, the interaction products emitted from each field region in the plane 101 should be projected onto the detector 209 by the system consisting of the objective lens, the beam switch 400 and the projection lens 205, so that the intensity distribution in each detection region 215 is rotationally symmetric, as shown in the intensity distribution 515e in a detection region 215e in Figure 8. However, due to many effects, the actual intensity distribution incident on individual detection regions will deviate from this ideal condition. By way of example, such effects can be topological effects of the object surface, which influence the starting conditions of the second electrons emitted from the object, or simply charge effects. Furthermore, intensity distributions that deviate from rotational symmetry can occur in the detection regions due to aberrations in the objective 102, the beam switch 400 and the projection lens 205. This is represented in FIG9 by the interlaced lines 515a in the detection region 215a. If the aberrations that cause deviations from the rotational symmetry are known in the ideal focus situation, this information can be used to generate an autofocus signal. For this purpose, the interaction products detected in the individual detection fields of the same detection region and the detector signals emitted therefrom can be analyzed with respect to the spatial distribution. If the constructed intensity distribution symmetry deviates from a known desired shape, adjustments such as refocusing are required. When the symmetry of the intensity distribution within a detection region has the desired shape, ideal focusing has been achieved. The global displacement or deformation of the intensity distribution of the interaction products on the detector relative to the desired position or desired distribution allows conclusions to be drawn about the overall sample appearance, such as, for example, a sample collage or an overall sample charge. Here, sample properties are global properties if they extend beyond the field region of an independent particle beam.
若一主要部分束撞擊在第一平面101內該物件表面的邊緣上,這通常會導致在多偵測器209的該平面內該強度分佈之置換,以及由於從該樣本發出的該等相互作用產物不同的軌跡造成該強度分佈形狀改變。這在圖8內指示用於部分215c和215d內的強度分佈515c和515d。該等相互作用產物在多偵測器209平面內的該強度分佈改變形式來自於該等相互作用產物軌跡由於該物件的表面拓撲或由於其他因素之相應改變,像是例如局部改變。利用評估用該個別偵測場所記錄的該等偵測信號,再次可決定該等已偵測相互作用產物的強度分佈置換,以及該強度分佈對於該旋轉對稱之偏離。利用評估此額外資訊,可改善接著要呈現給使用者的該影像資訊,例如藉由已經反白的邊緣。 If a major partial beam hits the edge of the object surface in the first plane 101, this generally results in a displacement of the intensity distribution in the plane of the multidetector 209 and a change in the shape of the intensity distribution due to different trajectories of the interaction products emanating from the sample. This is indicated in FIG8 for the intensity distributions 515c and 515d in the sections 215c and 215d. The changed form of the intensity distribution of the interaction products in the plane of the multidetector 209 results from corresponding changes in the trajectories of the interaction products due to the surface topology of the object or due to other factors, such as, for example, local changes. By evaluating the detection signals recorded with the individual detection sites, it is again possible to determine the intensity distribution displacements of the detected interaction products, as well as the deviations of the intensity distribution from the rotational symmetry. By evaluating this additional information, the image information subsequently presented to the user can be improved, for example by highlighting edges.
尤其是在該反射模式內,利用決定在該偵測器上該等位置,推論第二電子的局部開始角度。優點在於每一影像(訊框)可多次執行此評估,並且特別有利於每掃描畫素都執行此動作。從該開始角度分佈搭配有關該物件的進一步資訊,像是材料成分及/或該拓撲特徵高度,可計算該等特徵的橫向外型。為此,可分析由該等第二電子所產生亮度分佈的相對位 置,並且可分析偵測器處的該焦點、相對粒子束形式改變以及粒子束位置改變。 In particular, in the reflection mode, the local start angle of the second electron is inferred from the positions determined on the detector. The advantage is that this evaluation can be performed multiple times per image (frame) and is particularly advantageous for each scan pixel. From the start angle distribution in combination with further information about the object, such as the material composition and/or the height of the topological features, the lateral shape of the features can be calculated. For this purpose, the relative position of the brightness distribution generated by the second electrons can be analyzed, and the focus at the detector, relative beam form changes and beam position changes can be analyzed.
將主要粒子束撞擊位置上的該物件充電也導致該偵測器平面內該等相互作用產物的強度分佈置換,以及改變該等相互作用產物強度分佈的形式。如圖14內所描繪,帶電區域810內該物件的充電可導致偵測區域811一部分內的該等相互作用產物具有較寬的強度分佈。在其他偵測區域812、813、818內,相對於未帶電物件情況下置換該強度分佈,並且部分拉長,如此將在多偵測器209的該平面內發出之強度分佈拉長。在其他偵測區域814、815內,其在該物件表面上的相關位置距離該帶電區域夠遠,因此該物件的電荷不再具有效果,並且該強度分佈具有預定形式與位置。如此可輕鬆將特別是在偵測區域817內的該偵測信號之干擾,投射至相鄰偵測區域812的強度分佈。 Charging the object at the location of the primary beam impact also results in a displacement of the intensity distribution of the interaction products in the detector plane and a change in the form of the intensity distribution of the interaction products. As depicted in FIG14 , charging of the object in the charged region 810 can result in a wider intensity distribution of the interaction products in a portion of the detection region 811. In other detection regions 812, 813, 818, the intensity distribution is displaced and partially elongated relative to the case of an uncharged object, thus elongating the intensity distribution emitted in the plane of the multi-detector 209. In the other detection areas 814, 815, the relevant positions on the surface of the object are far enough away from the charged area so that the charge of the object no longer has an effect and the intensity distribution has a predetermined form and position. This makes it easy to project interference of the detection signal, especially in the detection area 817, to the intensity distribution of the adjacent detection area 812.
利用評估個別偵測場內的偵測器信號,可產生帶電對比影像。藉由範例,可借助於這些點,在描繪影像內以特殊方式描繪其上偵測到該等相互作用產物的特定形式。更進一步,借助於該等偵測區域與根據借助於該等偵測場所決定該強度分佈來修改的該已指派偵測場間之關聯性,可避免干擾。這在圖15內描繪用於三個偵測區域811a、812a、818a。在圖15內分別用方塊所指示的該等偵測場由個別偵測區域內個別局部決定的強度分佈所決定,並與新的結合來形成偵測區域811a、812a、818a,如此該等相互作用產物的個別強度分佈完全位於每一偵測區域的邊界之內。藉由重新指派之後的範例,圖14內將六個偵測場關聯於原始偵測區域811,而含十個偵測場的一偵測區域812a在重新指派之後從不同的原始偵測區域812產生。在該等偵測場重新指派至該等偵測區域之後,然後在所有偵測場內的該等偵測器信號分別加入至一信號,並且關聯於該物件表面上該對應物件點當成一影像信號。選擇性,在該等偵測器信號針對該物件表面上個別影像點的評估期間,可實施該等偵測場重新指派至該等偵測區域。 By evaluating the detector signals in the individual detection fields, a charge contrast image can be generated. By way of example, the specific forms on which the interaction products are detected can be depicted in a special way in the depicted image by means of these points. Furthermore, interferences can be avoided by means of the correlation between the detection regions and the assigned detection fields modified according to the intensity distribution determined by means of the detection fields. This is depicted in FIG. 15 for three detection regions 811a, 812a, 818a. The detection fields indicated by the blocks in FIG15 are determined by the intensity distributions determined locally in the individual detection regions and are combined with the new ones to form the detection regions 811a, 812a, 818a so that the individual intensity distributions of the interaction products are completely within the boundaries of each detection region. By way of example after reassignment, six detection fields are associated with the original detection region 811 in FIG14, while a detection region 812a containing ten detection fields is generated from a different original detection region 812 after reassignment. After the detection fields have been reassigned to the detection regions, the detector signals in all detection fields are then added to a signal respectively and associated to the corresponding object point on the object surface as an image signal. Optionally, the detection fields can be reassigned to the detection regions during the evaluation of the detector signals for individual image points on the object surface.
如上述,因為該等偵測信號一部分不再獨一關聯於該等偵測區域,所以充電或過度邊緣對比可導致具有單一固定偵測區域用於每一影像區域的一多偵測器內之干擾(該等偵測器通道之間的干擾)。使用每一偵測區都具有複數個偵測場的偵測器,也就是說其中複數個偵測器可用於每一主要粒子束,可重新關聯與每一偵測區域關聯的該等偵測場,如此根據利用找出具有提高信號強度的樣本連續區域,在該等粒子束位置分析之後該等粒子束的位置,首先降低干擾,接著在其他通道內並無偵測器信號遺失。若此評估在每訊框內不只實施一次,而是每訊框多次或甚至每像素多次,則特別有利。結果,實質上降低可能電荷補償系統的需求或該物件的拓撲需求。 As mentioned above, charging or excessive edge contrast can lead to interference (interference between the detector channels) in a multi-detector with a single fixed detection area for each image region, because a portion of the detection signals is no longer uniquely associated with the detection areas. Using detectors with multiple detection fields per detection area, that is, where multiple detectors are available for each primary beam, the detection fields associated with each detection area can be re-correlated, so that continuous areas of samples with increased signal strength are found based on the use of the positions of the beams after the analysis of the beam positions, firstly reducing interference and then without loss of detector signals in other channels. It is particularly advantageous if this evaluation is not performed only once per frame, but multiple times per frame or even multiple times per pixel. As a result, the need for a possible charge compensation system or the topology requirements of the object are substantially reduced.
特別是在帶電物件的情況下,可借助於此方法在該反射模式內推斷該局部物件結構,如上述。 Especially in the case of charged objects, this method can be used to infer the local object structure within the reflection pattern, as described above.
利用整合屬於相同偵測區域215a的所有偵測場之所有偵測器信號,則若具有主要粒子束的該物件輻射導致一局部樣本帶電,也可獲得影像資訊。 By integrating all detector signals of all detection fields belonging to the same detection area 215a, image information can also be obtained if the object irradiation with the primary particle beam causes a local sample to be charged.
圖10內的偵測系統200除了多偵測器209與投影透鏡205以外,還具有俗稱的成像能量過濾器600,例如一歐米迦過濾器。藉由範例,這種成像能量過濾器說明於US 4740704 A內。成像能量過濾器600以消色差方式,將第一輸入側平面601成像至一輸出影像平面602內。同時,該成像能量過濾器以分散方式,將一第二輸入側平面603成像至一第二輸出側平面604內,就是該分散平面內。利用在分散平面604內配置一光欄,其中第二輸入側平面603已經成像,則可改變可通過該過濾器600的這些相互作用產物之能量。此方式中可達成的就是,只有從該物件發出,具有由分散平面604內該光欄所預定能量的這些相互作用產物,才能被多偵測器209所偵測到。在此具體實施例內,也依照該投影系統內該等相互作用產物的個別軌跡來過濾該等產物,即使該能量過濾器確定每一相互作用產 物的軌跡取決於過濾器內其動能。在此具體實施例內,成像能量過濾器600與投影透鏡205一起形成該投影系統。 The detection system 200 in FIG. 10 has, in addition to the multi-detector 209 and the projection lens 205, a so-called imaging energy filter 600, such as an omega filter. By way of example, such an imaging energy filter is described in US 4740704 A. The imaging energy filter 600 images a first input side plane 601 in an achromatic manner into an output image plane 602. At the same time, the imaging energy filter images a second input side plane 603 in a dispersive manner into a second output side plane 604, i.e., the dispersive plane. By configuring a light barrier in the dispersive plane 604, in which the second input side plane 603 has been imaged, the energy of these interaction products that can pass through the filter 600 can be changed. What is achieved in this way is that only those interaction products emanating from the object with an energy predetermined by the beam in the dispersion plane 604 can be detected by the multi-detector 209. In this embodiment, the interaction products are also filtered according to their individual trajectories in the projection system, even if the energy filter determines the trajectory of each interaction product depending on its kinetic energy in the filter. In this embodiment, the imaging energy filter 600 together with the projection lens 205 forms the projection system.
在上述方式中,可用該多束系統產生電壓對比影像,因為該等相互作用產物的能量由該等相互作用產物離開該物件的位置上該物件之電位所決定。 In the manner described above, voltage contrast images can be produced using the multi-beam system because the energy of the interaction products is determined by the potential of the object at the location where the interaction products leave the object.
圖11描繪一偵測器系統200,其除了多偵測器209與投影透鏡205以外,還具有一分散產生元件700。藉由範例,這種分散產生元件可為磁扇。進入分散產生元件700的相互作用產物在分散產生元件700內根據其動能來分離。在此情況下,多偵測器209,像是圖7內的該偵測器,具有許多偵測場216a、216b用於每一偵測區域。然後,由於分散產生元件700內的分散,從平面101內每一場區域發出的該等相互作用產物撞擊相同偵測區域215b的不同偵測場216a、216b。在許多偵測場內偵測器信號的合適評估之後,再次可獲得影像資訊,這取決於該個別偵測場內所偵測的該等相互作用產物之動能。因為該等相互作用產物的動能接著取決於該等相互作用產物離開在第一平面101上的該位置上之靜電電位,因此可用此方式產生電壓對比影像。 FIG. 11 depicts a detector system 200 which, in addition to the multi-detector 209 and the projection lens 205, also has a dispersion generating element 700. By way of example, such a dispersion generating element can be a magnetic sector. The interaction products entering the dispersion generating element 700 are separated in the dispersion generating element 700 according to their kinetic energy. In this case, the multi-detector 209, such as the one in FIG. 7 , has a number of detection fields 216 a, 216 b for each detection region. Then, due to the dispersion in the dispersion generating element 700, the interaction products emanating from each field region in the plane 101 hit different detection fields 216 a, 216 b of the same detection region 215 b. After suitable evaluation of the detector signals within a number of detection fields, image information can again be obtained, which depends on the kinetic energy of the interaction products detected within the individual detection field. Since the kinetic energy of the interaction products then depends on the electrostatic potential at the location where the interaction products leave the first plane 101, voltage contrast images can be generated in this way.
利用評估屬於該相同偵測區域的該等偵測場內該等信號之分佈,可描繪出有關整體系統調整狀態的結論。這些結論或此資訊可用自動方式重新調整該系統,或啟動自動調整動作。屬於相同偵測區域的該等偵測場內該分佈形式或該等信號偏移之評估也可用來描繪出有關聚焦與其他參數(像是該物件表面的傾斜)之結論。此外或另外,在屬於相同偵測區域的該等偵測場內該等信號之分佈可平均分散在複數個偵測場上及/或時間內。然後,這供應有關全體物件屬性的資訊,像是該物件表面相對於該粒子束系統光學軸線的整體傾斜度。 By evaluating the distribution of the signals within the detection fields belonging to the same detection area, conclusions can be drawn about the adjustment state of the overall system. These conclusions or this information can be used to readjust the system in an automatic manner or to initiate automatic adjustment actions. The evaluation of the distribution form or the deviation of the signals within the detection fields belonging to the same detection area can also be used to draw conclusions about focusing and other parameters, such as the tilt of the object surface. Alternatively or additionally, the distribution of the signals within the detection fields belonging to the same detection area can be averaged over a plurality of detection fields and/or in time. This then provides information about overall object properties, such as the overall tilt of the object surface relative to the optical axis of the particle beam system.
圖16說明使用一粒子束儀器以及藉由可獲得含該物件表面放大拓撲效果的影像資訊,可執行之方法。在第一步驟中,用帶電粒子的 主要粒子束,照射該物件表面中複數個相互分隔的場區域。在此於步驟902內,借助於第一吸收場收集由於該入射主要粒子束而從該物件發出的相互作用產物,並且將用該第一吸收場收集的該等相互作用產物投射至一偵測器的複數個偵測區域上,如此將從兩不同場區域發出的該等相互作用產物投射至該偵測器的不同偵測區域上。此後,在進一步步驟903內,用帶電粒子的主要粒子束,分別同時照射該物件表面內複數個相互分隔的場區域。在此於步驟904內,由於該等入射主要粒子束而從該物件發出的該等相互作用產物借助於一第二吸入場來收集,其中該第二吸入場與該第一吸入場不同。在此,由該第二吸入場收集的該等相互作用產物依序投射至一偵測器的複數個偵測區域上,如此從該物件的兩不同場區域發出的該等相互作用產物投射至該偵測器的不同偵測區域上。在後續步驟905內,一起評估在兩不同吸入場的情況下所偵測到之該等信號,在步驟906內,從在該等不同吸入場情況下獲得的該等偵測器信號中獲得一資料信號,其中反白該物件的資料信號拓撲效果。在此情況內,步驟901和903內的兩吸入場應該顯著不同;尤其是,較強吸入場的該電場強度應該比該物件表面上較弱吸入場的該電場強度至少超過10%、更佳超過20%。此時,該較強吸入場的該電場強度應該比該較弱吸入場的該電場強度超過至少100V/mm。 FIG. 16 illustrates a method that can be performed using a particle beam instrument and by obtaining image information containing an amplified topological effect of the object surface. In a first step, a plurality of mutually separated field regions in the object surface are irradiated with a primary particle beam of charged particles. In this step 902, interaction products emitted from the object due to the incident primary particle beam are collected by means of a first absorption field, and the interaction products collected by the first absorption field are projected onto a plurality of detection regions of a detector, so that the interaction products emitted from two different field regions are projected onto different detection regions of the detector. Thereafter, in a further step 903, a plurality of mutually separated field regions in the object surface are irradiated simultaneously with the primary particle beam of charged particles. In step 904, the interaction products emitted from the object due to the incident primary particle beams are collected by means of a second suction field, wherein the second suction field is different from the first suction field. Here, the interaction products collected by the second suction field are sequentially projected onto a plurality of detection areas of a detector, so that the interaction products emitted from two different field areas of the object are projected onto different detection areas of the detector. In a subsequent step 905, the signals detected under the two different suction fields are evaluated together, and in step 906, a data signal is obtained from the detector signals obtained under the different suction fields, wherein the data signal topology effect of the object is highlighted. In this case, the two suction fields in steps 901 and 903 should be significantly different; in particular, the electric field strength of the stronger suction field should be at least 10% greater, preferably 20% greater than the electric field strength of the weaker suction field on the surface of the object. At this time, the electric field strength of the stronger suction field should be at least 100V/mm greater than the electric field strength of the weaker suction field.
1:粒子束系統 1: Particle beam system
3:主要粒子束 3: Main particle beam
5:位置 5: Location
7:物件 7: Objects
9:第二粒子束 9: Second particle beam
10:控制器 10: Controller
11:粒子束路徑 11: Particle beam path
100:物鏡系統 100:Objective system
101:第一平面 101: First plane
102:物鏡 102:Objective lens
103:矩形場 103: Rectangular field
200:偵測器系統 200: Detector system
205:投影透鏡 205: Projection lens
208:過濾裝置 208: Filter device
209:粒子多偵測器 209: Particle multi-detector
211:平面 211: Plane
213:位置 213: Location
215:偵測區域 215: Detection area
217:場 217: Field
300:粒子束產生設備 300: Particle beam generation equipment
301:粒子來源 301: Particle source
303:準直透鏡 303: Collimating lens
305:多孔徑配置 305:Multi-aperture configuration
307:場透鏡 307: Field lens
309:發散粒子束 309: Divergent particle beam
311:粒子束 311: Particle beam
313:多孔板 313: porous plate
315:孔徑 315: aperture
317:中央點 317: Central point
319:場 319: Field
323:粒子束焦點 323: Particle beam focus
325:平面 325: Plane
400:粒子束開關 400: Particle beam switch
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2016
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| CN110148548B (en) | 2021-10-08 |
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