TWI852052B - Sound transmitter - Google Patents

Sound transmitter Download PDF

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Publication number
TWI852052B
TWI852052B TW111128508A TW111128508A TWI852052B TW I852052 B TWI852052 B TW I852052B TW 111128508 A TW111128508 A TW 111128508A TW 111128508 A TW111128508 A TW 111128508A TW I852052 B TWI852052 B TW I852052B
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Taiwan
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vibration
microphone
vibration pickup
acoustic
pickup part
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TW111128508A
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Chinese (zh)
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TW202308406A (en
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周文兵
黃雨佳
袁永帥
鄧文俊
齊心
廖風雲
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大陸商深圳市韶音科技有限公司
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Abstract

The present disclosure discloses a sound transmitter. The sound transmitter may include: a housing structure; a vibration pickup part generating vibration in response to vibration of the housing structure; a vibration transmission part configured to transmit the vibration generated by the vibration pickup part; and an acoustical-electrical transduction element configured to receive the vibration transmitted by the vibration transmission part to generate an electrical signal. The vibration pickup part and the vibration transmission part may form a vacuum cavity, and the acoustical-electrical transduction element may be located in the vacuum cavity. In the present disclosure, the acoustical-electrical transduction element of the sound transmitter may be arranged in the vacuum cavity formed by the vibration pickup part and the vibration transmission part, so as to prevent the acoustical-electrical transduction element from contacting with air in an acoustic cavity, which can effectively reduce background noise of the sound transmitter, and at the same time prevent the acoustical-electrical transduction element from rubbing against gas during a vibration process, reducing air damping inside the vacuum cavity of the sound transmitter, and improving a Q value of the sound transmitter.

Description

傳聲器Microphone

本申請案涉及傳聲裝置技術領域,特別涉及一種傳聲器。 This application relates to the field of microphone technology, and in particular to a microphone.

相關申請案之交叉參考 Cross-references to related applications

本申請案主張於2021年8月11日提交之申請號為202110917780.6的中國專利申請案的優先權,其全部內容通過引用的方式併入本文。 This application claims priority to the Chinese patent application No. 202110917780.6 filed on August 11, 2021, the entire contents of which are incorporated herein by reference.

傳聲器是一種將聲音信號轉換為電信號的轉換器。以氣傳導麥克風為例,外部聲音信號通過殼體結構上的孔部進入氣傳導麥克風的聲學腔體並傳遞至聲電轉換組件,聲電轉換組件基於該聲音信號產生振動並將振動信號轉換為電信號輸出。傳聲器的聲學腔體內部具有一定氣壓的氣體(例如,空氣),會使得聲音信號在經由傳聲器的聲學腔體傳遞至聲電轉換組件的流程中產生較大的雜訊,降低傳聲器輸出的聲音品質。此外,傳聲器的聲電轉換組件在接收到聲音信號產生振動的流程中,聲電轉換組件會與聲學腔體中的氣體進行摩擦,增大傳聲器的聲學腔體的空氣阻尼,從而降低傳聲器的Q值。 A microphone is a transducer that converts sound signals into electrical signals. Taking an air conduction microphone as an example, the external sound signal enters the acoustic cavity of the air conduction microphone through the hole in the shell structure and is transmitted to the acoustic-to-electric conversion component. The acoustic-to-electric conversion component generates vibrations based on the sound signal and converts the vibration signal into an electrical signal for output. The acoustic cavity of the microphone has a gas (e.g., air) with a certain air pressure inside, which will cause the sound signal to generate greater noise in the process of being transmitted from the acoustic cavity of the microphone to the acoustic-to-electric conversion component, thereby reducing the sound quality output by the microphone. In addition, when the microphone's acoustic-to-electric conversion component vibrates after receiving a sound signal, it will rub against the gas in the acoustic cavity, increasing the air damping of the microphone's acoustic cavity, thereby reducing the microphone's Q value.

因此,希望提供一種具有低底噪、高Q值的傳聲器。 Therefore, it is desirable to provide a microphone with low noise floor and high Q value.

本申請案實施例提供一種傳聲器,該傳聲器包括:殼體結構;振動拾取部,所述振動拾取部回應於所述殼體結構的振動而產生振動;振動傳遞 部,被配置為傳遞所述振動拾取部產生的振動;以及聲電轉換組件,被配置為接收所述振動傳遞部傳遞的振動而產生電信號;其中,所述振動拾取部與所述振動傳遞部形成真空腔體,所述聲電轉換組件位於所述真空腔體中。 The present application provides a microphone, which includes: a housing structure; a vibration pickup part, which generates vibration in response to the vibration of the housing structure; a vibration transmission part, which is configured to transmit the vibration generated by the vibration pickup part; and an acoustic-to-electric conversion component, which is configured to receive the vibration transmitted by the vibration transmission part and generate an electrical signal; wherein the vibration pickup part and the vibration transmission part form a vacuum cavity, and the acoustic-to-electric conversion component is located in the vacuum cavity.

相對於現有技術,本揭示內容的實施例中提供的傳聲器的有益效果在於:傳聲器中聲電轉換組件位於振動拾取部和振動傳遞部形成的真空腔體中,外部聲音信號通過孔部進入殼體結構的聲學腔體中,使聲學腔體中的空氣產生振動,振動拾取部和振動傳遞部將振動傳遞至處於真空腔體中的聲電轉換組件,避免了聲電轉換組件與聲學腔體的空氣相接觸,進而解決了聲電轉換組件在聲電轉換工作流程中聲學腔體的空氣振動帶來的影響,也就是說解決了傳聲器底噪較大的問題。此外,聲電轉換組件位於真空腔體中,可以避免聲電轉換組件在振動的流程中與氣體進行摩擦,從而減小傳聲器的真空腔體內部的空氣阻尼,提高傳聲器的Q值。 Compared with the prior art, the beneficial effect of the microphone provided in the embodiment of the present disclosure is that the acoustic-to-electric conversion component in the microphone is located in a vacuum cavity formed by a vibration pickup portion and a vibration transmission portion, and the external sound signal enters the acoustic cavity of the shell structure through the hole, causing the air in the acoustic cavity to vibrate, and the vibration pickup portion and the vibration transmission portion transmit the vibration to the acoustic-to-electric conversion component in the vacuum cavity, thereby avoiding contact between the acoustic-to-electric conversion component and the air in the acoustic cavity, thereby solving the influence of the acoustic-to-electric conversion component on the air vibration of the acoustic cavity during the acoustic-to-electric conversion process, that is, solving the problem of large background noise of the microphone. In addition, the acoustic-to-electric conversion component is located in the vacuum cavity, which can prevent the acoustic-to-electric conversion component from rubbing against the gas during the vibration process, thereby reducing the air damping inside the vacuum cavity of the microphone and improving the Q value of the microphone.

100:傳聲器 100: Microphone

110:殼體結構 110: Shell structure

111:孔部 111: Hole

120:聲電轉換組件 120: Sound-to-electric conversion components

130:處理器 130: Processor

140:聲學腔體 140:Acoustic cavity

150:導線 150: Conductor wire

200:傳聲器 200: Microphone

210:殼體結構 210: Shell structure

211:孔部 211: Hole

220:聲電轉換組件 220: Sound-to-electric conversion components

230:處理器 230: Processor

240:第一聲學腔體 240: First acoustic cavity

250:第二聲學腔體 250: Second acoustic cavity

260:振動拾取部 260: Vibration pickup unit

270:導線 270: Conductor

500:傳聲器 500: Microphone

510:殼體結構 510: Shell structure

511:孔部 511: Hole

520:聲電轉換組件 520: Sound-to-electric conversion components

522:振動拾取部 522: Vibration pickup unit

523:振動傳遞部 523: Vibration transmission unit

530:第一聲學腔體 530: First acoustic cavity

540:第二聲學腔體 540: Second acoustic cavity

550:真空腔體 550: Vacuum chamber

1000:傳聲器 1000: Microphone

1010:殼體結構 1010: Shell structure

1011:孔部 1011: Hole

1020:聲電轉換組件 1020: Sound-to-electric conversion components

1022:振動拾取部 1022: Vibration pickup unit

1023:振動傳遞部 1023: Vibration transmission unit

1030:第一聲學腔體 1030: The first acoustic cavity

1040:第二聲學腔體 1040: Second acoustic cavity

1050:真空腔體 1050: Vacuum chamber

1110:頻率響應曲線 1110:Frequency response curve

1120:頻率響應曲線 1120:Frequency response curve

1130:頻率響應曲線 1130:Frequency response curve

1200:傳聲器 1200: Microphone

1210:殼體結構 1210: Shell structure

1211:孔部 1211: Hole Department

1220:聲電轉換組件 1220: Sound-to-electric conversion components

1222:振動拾取部 1222: Vibration pickup unit

1223:振動傳遞部 1223: Vibration transmission unit

1230:第一聲學腔體 1230: The first acoustic cavity

1240:第二聲學腔體 1240: Second acoustic cavity

1250:真空腔體 1250: Vacuum chamber

1260:膜結構 1260:Membrane structure

1300:傳聲器 1300: Microphone

1310:殼體結構 1310: Shell structure

1311:孔部 1311: Hole

1320:聲電轉換組件 1320: Sound-to-electric conversion components

1322:振動拾取部 1322: Vibration pickup unit

1323:振動傳遞部 1323: Vibration transmission unit

1330:第一聲學腔體 1330: The first acoustic cavity

1340:第二聲學腔體 1340: Second acoustic cavity

1350:真空腔體 1350: Vacuum chamber

1360:膜結構 1360:Membrane structure

1500:傳聲器 1500: Microphone

1510:殼體結構 1510: Shell structure

1511:孔部 1511: Hole Department

1520:聲電轉換組件 1520: Sound-to-electric conversion components

1522:振動拾取部 1522: Vibration pickup unit

1523:振動傳遞部 1523: Vibration transmission unit

1530:第一聲學腔體 1530: The first acoustic cavity

1540:第二聲學腔體 1540: Second acoustic cavity

1550:真空腔體 1550: Vacuum chamber

1600:傳聲器 1600: Microphone

1610:殼體結構 1610: Shell structure

1611:孔部 1611: Hole Department

1620:聲電轉換組件 1620: Sound-to-electric conversion components

1622:振動拾取部 1622: Vibration pickup unit

1623:振動傳遞部 1623: Vibration transmission unit

1630:第一聲學腔體 1630: The first acoustic cavity

1640:第二聲學腔體 1640: Second acoustic cavity

1650:真空腔體 1650: Vacuum chamber

1700:傳聲器 1700: Microphone

1710:殼體結構 1710: Shell structure

1711:孔部 1711: Hole Department

1720:聲電轉換組件 1720: Sound-to-electric conversion components

1722:振動拾取部 1722: Vibration pickup unit

1723:振動傳遞部 1723: Vibration Transmission Department

1730:第一聲學腔體 1730: The first acoustic cavity

1740:第二聲學腔體 1740: Second acoustic cavity

1750:真空腔體 1750: Vacuum chamber

1760:支撐結構 1760:Supporting structure

2000:傳聲器 2000: Microphone

2010:殼體結構 2010: Shell structure

2011:孔部 2011: Kong Department

2020:聲電轉換組件 2020: Sound-to-Electricity Conversion Components

2022:振動拾取部 2022: Vibration pickup unit

2023:振動傳遞部 2023: Vibration Transmission Department

2030:第一聲學腔體 2030: The first acoustic cavity

2040:第二聲學腔體 2040: Second acoustic cavity

2050:真空腔體 2050: Vacuum chamber

2060:支撐結構 2060:Supporting structure

2100:傳聲器 2100: Microphone

2110:殼體結構 2110: Shell structure

2120:聲電轉換組件 2120: Sound-to-electric conversion components

2122:振動拾取部 2122: Vibration pickup unit

2123:振動傳遞部 2123: Vibration transmission unit

2130:第一聲學腔體 2130: The first acoustic cavity

2140:第二聲學腔體 2140: Second acoustic cavity

2150:真空腔體 2150: Vacuum chamber

2160:支撐結構 2160:Support structure

2200:傳聲器 2200: Microphone

2210:殼體結構 2210: Shell structure

2220:聲電轉換組件 2220: Sound-to-electric conversion components

2222:振動拾取部 2222: Vibration pickup unit

2223:振動傳遞部 2223: Vibration transmission unit

2230:第一聲學腔體 2230: The first acoustic cavity

2240:第二聲學腔體 2240: Second acoustic cavity

2250:真空腔體 2250: Vacuum chamber

2260:支撐結構 2260:Support structure

5221:第一振動拾取部 5221: First vibration pickup unit

5222:第二振動拾取部 5222: Second vibration pickup unit

10211:第一懸臂樑結構 10211: First cantilever beam structure

10212:第二懸臂樑結構 10212: Second cantilever beam structure

10221:第一振動拾取部 10221: First vibration pickup unit

10222:第二振動拾取部 10222: Second vibration pickup unit

12221:第一振動拾取部 12221: First vibration pickup unit

12222:第二振動拾取部 12222: Second vibration pickup unit

13211:第一懸臂樑結構 13211: First cantilever beam structure

13212:第二懸臂樑結構 13212: Second cantilever beam structure

13221:第一振動拾取部 13221: First vibration pickup unit

13222:第二振動拾取部 13222: Second vibration pickup unit

15221:第一振動拾取部 15221: First vibration pickup unit

15222:第二振動拾取部 15222: Second vibration pickup unit

15223:第三振動拾取部 15223: The third vibration pickup unit

16211:第一懸臂樑結構 16211: First cantilever beam structure

16212:第二懸臂樑結構 16212: Second cantilever beam structure

16221:第一振動拾取部 16221: First vibration pickup unit

16222:第二振動拾取部 16222: Second vibration pickup unit

16223:第三振動拾取部 16223: The third vibration pickup unit

17221:第一振動拾取部 17221: First vibration pickup unit

17222:第二振動拾取部 17222: Second vibration pickup unit

17223:第三振動拾取部 17223: The third vibration pickup unit

20211:第一懸臂樑結構 20211: First cantilever beam structure

20212:第二懸臂樑結構 20212: Second cantilever beam structure

20221:第一振動拾取部 20221: First vibration pickup unit

20222:第二振動拾取部 20222: Second vibration pickup unit

20223:第三振動拾取部 20223: The third vibration pickup unit

21221:第一振動拾取部 21221: First vibration pickup unit

21222:第二振動拾取部 21222: Second vibration pickup unit

21223:第三振動拾取部 21223: The third vibration pickup unit

22211:第一懸臂樑結構 22211: First cantilever beam structure

22212:第二懸臂樑結構 22212: Second cantilever beam structure

22221:第一振動拾取部 22221: First vibration pickup unit

22222:第二振動拾取部 22222: Second vibration pickup unit

22223:第三振動拾取部 22223: The third vibration pickup unit

52211:第一彈性部 52211: First elastic part

52212:第一固定部 52212: First fixed part

52221:第二彈性部 52221: Second elastic part

52222:第二固定部 52222: Second fixed part

102211:第一彈性部 102211: First elastic part

102212:第一固定部 102212: First fixed part

102221:第二彈性部 102221: Second elastic part

102222:第二固定部 102222: Second fixing part

122211:第一彈性部 122211: First elastic part

122212:第一固定部 122212: First fixed part

122221:第二彈性部 122221: Second elastic part

122222:第二固定部 122222: Second fixing part

132211:第一彈性部 132211: First elastic part

132212:第一固定部 132212: First fixed part

132221:第二彈性部 132221: Second elastic part

132222:第二固定部 132222: Second fixing part

本申請案將以示例性實施例的方式進一步說明,這些示例性實施例將通過圖式進行詳細描述。這些實施例並非限制性的,在這些實施例中,相同的編號表示相同的結構,其中;[圖1]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖2]係根據本申請案一些實施例所示的另一種傳聲器的結構示意圖;[圖3]係根據本申請案一些實施例所示的聲電轉換組件的彈簧-質量-阻尼系統的示意圖;[圖4]係根據本申請案的一些實施例所示的彈簧-質量-阻尼系統的位移共振曲線的示例性歸一化的示意圖; [圖5]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖6]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖7]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖8A]係圖5中傳聲器沿A至A方向的截面示意圖;[圖8B]係圖5傳聲器沿垂直於A至A方向的截面示意圖;[圖9A]係根據本申請案一些實施例所示的懸臂樑結構分佈示意圖;[圖9B]係根據本申請案一些實施例所示的懸臂樑結構分佈示意圖;[圖10]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖11]係根據本申請案一些實施例所示的傳聲器的頻率響應曲線示意圖;[圖12]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖13]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖14]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖15]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖16]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖17]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖18A]係根據本申請案的一些實施例所示的傳聲器的截面示意圖;[圖18B]係根據本申請案的一些實施例所示的傳聲器的截面示意圖;[圖19A]係根據本申請案的一些實施例所示的傳聲器的截面示意圖; [圖19B]係根據本申請案的一些實施例所示的傳聲器的截面示意圖;[圖20]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖21]係根據本申請案一些實施例所示的傳聲器的結構示意圖;[圖22]係根據本申請案一些實施例所示的傳聲器的結構示意圖。 This application will be further explained in the form of exemplary embodiments, which will be described in detail through drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein; [Figure 1] is a schematic diagram of the structure of a microphone shown in some embodiments of this application; [Figure 2] is a schematic diagram of the structure of another microphone shown in some embodiments of this application; [Figure 3] is a schematic diagram of the spring-mass-damper system of the acoustic-to-electric conversion component shown in some embodiments of this application; [Figure 4] is an exemplary normalized schematic diagram of the displacement resonance curve of the spring-mass-damper system shown in some embodiments of this application; [Figure 5] is a schematic diagram of the structure of the microphone shown in some embodiments of this application Schematic diagram; [Fig. 6] is a schematic diagram of the structure of the microphone shown in some embodiments of the present application; [Fig. 7] is a schematic diagram of the structure of the microphone shown in some embodiments of the present application; [Fig. 8A] is a schematic diagram of the cross-section of the microphone in Fig. 5 along the A to A direction; [Fig. 8B] is a schematic diagram of the cross-section of the microphone in Fig. 5 along the direction perpendicular to the A to A direction; [Fig. 9A] is a schematic diagram of the cantilever beam structure distribution shown in some embodiments of the present application; [Fig. 9B] is a schematic diagram of the cantilever beam structure distribution shown in some embodiments of the present application; [Fig. 10] is a schematic diagram of the structure of the microphone shown in some embodiments of the present application; [Fig. 11] is a schematic diagram of the structure of the microphone shown in some embodiments of the present application FIG12 is a schematic diagram of a frequency response curve of a microphone according to some embodiments of the present application; FIG13 is a schematic diagram of a structure of a microphone according to some embodiments of the present application; FIG14 is a schematic diagram of a structure of a microphone according to some embodiments of the present application; FIG15 is a schematic diagram of a structure of a microphone according to some embodiments of the present application; FIG16 is a schematic diagram of a structure of a microphone according to some embodiments of the present application; FIG17 is a schematic diagram of a structure of a microphone according to some embodiments of the present application; FIG18A is a schematic diagram of a structure of a microphone according to some embodiments of the present application; [Figure 18B] is a schematic cross-sectional view of a microphone according to some embodiments of the present application; [Figure 19A] is a schematic cross-sectional view of a microphone according to some embodiments of the present application; [Figure 19B] is a schematic cross-sectional view of a microphone according to some embodiments of the present application; [Figure 20] is a schematic structural view of a microphone according to some embodiments of the present application; [Figure 21] is a schematic structural view of a microphone according to some embodiments of the present application; [Figure 22] is a schematic structural view of a microphone according to some embodiments of the present application.

為了更清楚地說明本申請案實施例的技術方案,下面將對實施例描述中所需要使用的圖式作簡單的介紹。顯而易見地,下面描述中的圖式僅僅是本申請案的一些示例或實施例,對於本領域具有通常知識者來講,在不付出進步性努力的前提下,還可以根據這些圖式將本申請案應用於其它類似情景。除非從語言環境中顯而易見或另做說明,圖中相同標號代表相同結構或操作。 In order to more clearly explain the technical solution of the embodiment of this application, the following will briefly introduce the figures required for the description of the embodiment. Obviously, the figures described below are only some examples or embodiments of this application. For those with ordinary knowledge in this field, this application can also be applied to other similar scenarios based on these figures without making any progressive efforts. Unless it is obvious from the language context or otherwise explained, the same number in the figure represents the same structure or operation.

本說明書描述了一種傳聲器。傳聲器是一種將聲音信號轉換成電信號的轉換器。在一些實施例中,傳聲器可以是動圈式傳聲器、帶式傳聲器、電容式傳聲器、壓電式傳聲器、駐極體式傳聲器、電磁式傳聲器、碳粒式傳聲器等或其任意組合。在一些實施例中,以聲音採集的方式進行區分,傳聲器可以包括骨傳導傳聲器和氣傳導傳聲器。本揭示內容的實施例描述的傳聲器可以包括殼體結構、振動拾取部、振動傳遞部和聲電轉換組件。其中,殼體結構可以被配置為承載振動拾取部、振動傳遞部和聲電轉換組件。在一些實施例中,殼體結構可以為內部中空的結構體,殼體結構可以獨立形成聲學腔體,振動拾取部、振動傳遞部和聲電轉換組件可以位於殼體結構的聲學腔體內。在一些實施例中,振動拾取部可以與殼體結構的側壁連接,振動拾取部可以回應於傳遞到殼體結構的外部聲音信號而產生振動。在一些實施例中,振動傳遞部可以與振動拾取部連接,振動傳遞部可以接收振動拾取部的振動,並將振動信號傳遞至聲電轉換組件,聲 電轉換組件將振動信號轉換為電信號。在一些實施例中,振動傳遞部與振動拾取部的部分結構(例如,固定部)之間可以形成真空腔體,聲電轉換組件位於真空腔體中。本揭示內容的實施例提供的傳聲器中聲電轉換組件位於振動拾取部和振動傳遞部形成的真空腔體中,外部聲音信號通過孔部進入殼體結構的聲學腔體中,使聲學腔體中的空氣產生振動,振動拾取部和振動傳遞部將振動傳遞至處於真空腔體中的聲電轉換組件,避免了聲電轉換組件與聲學腔體的空氣相接觸,進而解決了聲電轉換組件在聲電轉換工作流程中聲學腔體的空氣振動帶來的影響,也就是說解決了傳聲器底噪較大的問題。此外,聲電轉換組件位於真空腔體中,可以避免聲電轉換組件在振動的流程中與氣體進行摩擦,從而減小傳聲器的真空腔體內部的空氣阻尼,提高傳聲器的Q值。 This specification describes a microphone. A microphone is a converter that converts a sound signal into an electrical signal. In some embodiments, the microphone may be a dynamic microphone, a ribbon microphone, a capacitor microphone, a piezoelectric microphone, a stationary-pole microphone, an electromagnetic microphone, a carbon-particle microphone, or the like or any combination thereof. In some embodiments, the microphone may include a bone conduction microphone and an air conduction microphone, based on the way the sound is collected. The microphone described in the embodiments of the present disclosure may include a housing structure, a vibration pickup portion, a vibration transmission portion, and an acoustic-to-electric conversion assembly. Among them, the housing structure may be configured to carry the vibration pickup portion, the vibration transmission portion, and the acoustic-to-electric conversion assembly. In some embodiments, the housing structure may be a hollow structure, the housing structure may independently form an acoustic cavity, and the vibration pickup portion, the vibration transmission portion, and the acoustic-electric conversion assembly may be located in the acoustic cavity of the housing structure. In some embodiments, the vibration pickup portion may be connected to the side wall of the housing structure, and the vibration pickup portion may generate vibration in response to an external sound signal transmitted to the housing structure. In some embodiments, the vibration transmission portion may be connected to the vibration pickup portion, the vibration transmission portion may receive the vibration of the vibration pickup portion, and transmit the vibration signal to the acoustic-electric conversion assembly, and the acoustic-electric conversion assembly converts the vibration signal into an electrical signal. In some embodiments, a vacuum cavity can be formed between the vibration transmission part and the partial structure of the vibration pickup part (for example, the fixing part), and the acoustic-to-electric conversion component is located in the vacuum cavity. In the microphone provided by the embodiments of the present disclosure, the acoustic-to-electric conversion component is located in the vacuum cavity formed by the vibration pickup part and the vibration transmission part, and the external sound signal enters the acoustic cavity of the shell structure through the hole, causing the air in the acoustic cavity to vibrate. The vibration pickup part and the vibration transmission part transmit the vibration to the acoustic-to-electric conversion component in the vacuum cavity, thereby avoiding the acoustic-to-electric conversion component from contacting the air in the acoustic cavity, thereby solving the influence of the acoustic-to-electric conversion component on the air vibration of the acoustic cavity in the acoustic-to-electric conversion process, that is, solving the problem of the large background noise of the microphone. In addition, the acoustic-to-electric conversion component is located in the vacuum cavity, which can prevent the acoustic-to-electric conversion component from rubbing against the gas during the vibration process, thereby reducing the air damping inside the vacuum cavity of the microphone and improving the Q value of the microphone.

圖1係根據本申請案一些實施例所示的傳聲器的結構示意圖。如圖1所示,傳聲器100可以包括殼體結構110、聲電轉換組件120和處理器130。傳聲器100可以基於外部信號,例如,聲音信號(如聲波)、機械振動信號等,產生形變及/或位移。所述形變及/或位移可以通過傳聲器100的聲電轉換組件120進一步轉換為電信號。在一些實施例中,傳聲器100可以是氣傳導麥克風或骨傳導麥克風等。氣傳導麥克風是指聲波通過空氣傳導的麥克風。骨傳導麥克風是指聲波以機械振動的方式在固體(例如,骨骼)中傳導的麥克風。 FIG1 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG1 , the microphone 100 may include a housing structure 110, an acoustic-to-electric conversion component 120, and a processor 130. The microphone 100 may generate deformation and/or displacement based on an external signal, such as an acoustic signal (such as a sound wave), a mechanical vibration signal, etc. The deformation and/or displacement may be further converted into an electrical signal by the acoustic-to-electric conversion component 120 of the microphone 100. In some embodiments, the microphone 100 may be an air conduction microphone or a bone conduction microphone. An air conduction microphone refers to a microphone in which sound waves are conducted through air. A bone conduction microphone refers to a microphone in which sound waves are conducted in a solid (e.g., bone) in the form of mechanical vibration.

殼體結構110可以為內部中空的結構體,殼體結構110可以獨立形成聲學腔體140,聲電轉換組件120和處理器130位於聲學腔體140內。在一些實施例中,殼體結構110的材質可以包括但不限於金屬、合金材料、高分子材料(例如,丙烯腈-丁二烯-苯乙烯共聚物、聚氯乙烯、聚碳酸酯、聚丙烯等)等中的一種或多種。在一些實施例中,殼體結構110的側壁上可以開設有一個或多個孔部111,一個或多個孔部111可以將外部聲音信號導入聲學腔體140。在一些實施例中,外部聲音信號可以從孔部111進入傳聲器100的聲學腔體140,並引起聲學腔 體140內的空氣產生振動,聲電轉換組件120可以接收該振動信號並將振動信號轉換為電信號輸出。 The shell structure 110 may be a hollow structure, and the shell structure 110 may independently form an acoustic cavity 140, and the acoustic-to-electric conversion component 120 and the processor 130 are located in the acoustic cavity 140. In some embodiments, the material of the shell structure 110 may include but is not limited to one or more of metal, alloy material, polymer material (e.g., acrylonitrile-butadiene-styrene copolymer, polyvinyl chloride, polycarbonate, polypropylene, etc.). In some embodiments, one or more holes 111 may be opened on the side wall of the shell structure 110, and the one or more holes 111 may guide external sound signals into the acoustic cavity 140. In some embodiments, an external sound signal can enter the acoustic cavity 140 of the microphone 100 from the hole 111 and cause the air in the acoustic cavity 140 to vibrate. The acoustic-to-electric conversion component 120 can receive the vibration signal and convert the vibration signal into an electrical signal for output.

聲電轉換組件120用於將外部信號轉換為目標信號。在一些實施例中,聲電轉換組件120可以為疊層結構。在一些實施例中,疊層結構的至少部分結構與殼體結構通過物理方式進行連接。本申請案所述的「連接」可以理解為同一結構上不同部位之間的連接,或者在分別製備不同部件或結構後,將各獨立部件或結構通過焊接、鉚接、卡接、螺栓連接、膠黏劑黏合等方式固定連接,或者在製備流程中,通過物理沉積(例如,物理氣相沉積)或者化學沉積(例如,化學氣相沉積)的方式將第一部件或結構沉積在第二部件或結構上。在一些實施例中,疊層結構的至少部分結構可以固定於殼體結構的側壁。例如,疊層結構可以為懸臂樑,該懸臂樑可以為板狀結構體,懸臂樑的一端與殼體結構的腔體所在的側壁連接,懸臂樑的另一端不與基體結構連接或接觸,使得懸臂樑的另一端懸空設置於殼體結構的腔體。又例如,傳聲器可以包括振膜層(也稱為振動拾取部),振動拾取部與殼體結構固定連接,疊層結構設置於振動拾取部結構的上表面或下表面。需要知道的是,本申請案中所說的「位於腔體」或「懸空設置於腔體」可以表示懸空設置於腔體的內部、下部或者上方。在一些實施例中,聲電轉換組件120也可以通過其他部件(例如,振動拾取部、振動傳遞部)與殼體結構110連接。 The acoustic-to-electric conversion assembly 120 is used to convert an external signal into a target signal. In some embodiments, the acoustic-to-electric conversion assembly 120 may be a laminated structure. In some embodiments, at least a portion of the laminated structure is physically connected to the shell structure. The "connection" described in this application may be understood as a connection between different parts of the same structure, or after preparing different components or structures separately, each independent component or structure is fixedly connected by welding, riveting, clamping, bolting, adhesive bonding, etc., or in the preparation process, a first component or structure is deposited on a second component or structure by physical deposition (e.g., physical vapor deposition) or chemical deposition (e.g., chemical vapor deposition). In some embodiments, at least part of the stacked structure can be fixed to the side wall of the shell structure. For example, the stacked structure can be a cantilever beam, which can be a plate-like structure, one end of which is connected to the side wall where the cavity of the shell structure is located, and the other end of which is not connected to or in contact with the base structure, so that the other end of the cantilever beam is suspended in the cavity of the shell structure. For another example, the microphone can include a diaphragm layer (also called a vibration pickup portion), the vibration pickup portion is fixedly connected to the shell structure, and the stacked structure is arranged on the upper surface or lower surface of the vibration pickup portion structure. It should be noted that the phrase "located in the cavity" or "suspended in the cavity" in this application may mean suspended in the interior, below or above the cavity. In some embodiments, the acoustic-electric conversion assembly 120 may also be connected to the housing structure 110 via other components (e.g., a vibration pickup unit, a vibration transmission unit).

在一些實施例中,疊層結構可以包括振動單元和聲學換能單元。振動單元是指疊層結構中受到外力容易發生形變的部分,振動單元可以用於將外力導致的形變傳遞至聲學換能單元。聲學換能單元是指疊層結構中將振動單元的形變轉換為電信號的部分。具體地,外部聲音信號通過進聲孔111進入聲學腔體140,使得聲學腔體140內的空氣產生振動,振動單元回應於聲學腔體140內部空氣的振動發生形變;聲學換能單元基於振動單元的的形變產生電信號。需要 知道的是,這裡對振動單元和聲學換能單元的描述只是出於方便介紹疊層結構工作原理的目的,並不限制疊層結構的實際組成和結構。事實上,振動單元可以不是必須的,其功能完全可以由聲學換能單元實現。例如,對聲學換能單元的結構做一定改變後可以由聲學換能單元直接回應於基體結構的振動而產生電信號。 In some embodiments, the laminated structure may include a vibration unit and an acoustic transducer unit. The vibration unit refers to the portion of the laminated structure that is easily deformed by external force, and the vibration unit can be used to transfer the deformation caused by external force to the acoustic transducer unit. The acoustic transducer unit refers to the portion of the laminated structure that converts the deformation of the vibration unit into an electrical signal. Specifically, the external sound signal enters the acoustic cavity 140 through the sound inlet 111, causing the air in the acoustic cavity 140 to vibrate, and the vibration unit deforms in response to the vibration of the air inside the acoustic cavity 140; the acoustic transducer unit generates an electrical signal based on the deformation of the vibration unit. It is important to know that the description of the vibration unit and the acoustic transducer unit here is only for the purpose of conveniently introducing the working principle of the laminated structure, and does not limit the actual composition and structure of the laminated structure. In fact, the vibration unit may not be necessary, and its function can be fully realized by the acoustic transducer unit. For example, after making certain changes to the structure of the acoustic transducer unit, the acoustic transducer unit can directly respond to the vibration of the base structure and generate an electrical signal.

在一些實施例中,振動單元和聲學換能單元重疊形成疊層結構。聲學換能單元可以位於振動單元的上層,聲學換能單元也可以位於振動單元的下層。 In some embodiments, the vibration unit and the acoustic transducer unit overlap to form a stacked structure. The acoustic transducer unit can be located on the upper layer of the vibration unit, and the acoustic transducer unit can also be located on the lower layer of the vibration unit.

在一些實施例中,聲學換能單元可以包括兩個電極層(例如,第一電極層和第二電極層)和壓電層,壓電層可以位於第一電極層和第二電極層之間。壓電層是指受到外力作用時可以在其兩端面產生電壓的結構。在一些實施例中,壓電層可以在振動單元的形變應力作用下產生電壓,第一電極層和第二電極層可以將該電壓(電信號)進行採集。 In some embodiments, the acoustic transducer unit may include two electrode layers (e.g., a first electrode layer and a second electrode layer) and a piezoelectric layer, and the piezoelectric layer may be located between the first electrode layer and the second electrode layer. The piezoelectric layer refers to a structure that can generate voltage on its two end surfaces when subjected to external force. In some embodiments, the piezoelectric layer can generate voltage under the deformation stress of the vibration unit, and the first electrode layer and the second electrode layer can collect the voltage (electrical signal).

處理器130可以從聲電轉換組件120獲取電信號並進行信號處理。在一些實施例中,處理器130可以通過導線150(例如金線、銅線、鋁線等)與聲電轉換組件120直接連接。在一些實施例中,所述信號處理可以包括調頻處理、調幅處理、濾波處理、降噪處理等。在一些實施例中,處理器130可以包括但不限於微控制器、微處理器、特定應用積體電路(ASIC)、特定應用指令集處理器(ASIP)、中央處理器(CPU)、物理運算處理器(PPU)、數位訊號處理器(DSP)、現場可程式閘陣列(FPGA)、高級精簡指令集電腦(ARM)、可程式邏輯裝置(PLD)等,或其他類型的處理電路或處理器。 The processor 130 can obtain an electrical signal from the acoustic-to-electric conversion component 120 and perform signal processing. In some embodiments, the processor 130 can be directly connected to the acoustic-to-electric conversion component 120 through a wire 150 (e.g., a gold wire, a copper wire, an aluminum wire, etc.). In some embodiments, the signal processing can include frequency modulation processing, amplitude modulation processing, filtering processing, noise reduction processing, etc. In some embodiments, the processor 130 may include but is not limited to a microcontroller, a microprocessor, an application specific integrated circuit (ASIC), an application specific instruction set processor (ASIP), a central processing unit (CPU), a physical processing unit (PPU), a digital signal processor (DSP), a field programmable gate array (FPGA), an advanced reduced instruction set computer (ARM), a programmable logic device (PLD), etc., or other types of processing circuits or processors.

在一些實施例中,傳聲器100作為氣傳導傳聲器(例如,氣傳導麥克風)時,聲學腔體140通過孔部111可以與傳聲器100外部聲學連通,使得聲學腔體140中具有一定氣壓的氣體(例如,空氣)。聲學腔體140內部的氣體會使 得聲音信號從孔部111經聲學腔體140傳遞至聲電轉換組件120的流程中,聲學腔體140內部的空氣產生振動,該振動作用於聲電轉換組件120產生振動的同時,會給傳聲器100帶來較大的底噪。另一方面,聲電轉換組件120在接收到聲音信號產生振動的流程中,聲電轉換組件120會與聲學腔體140內部的氣體進行摩擦,增大聲學腔體140內的空氣阻尼,從而減低傳聲器100的Q值。為了解決上述問題,本申請案說明書的實施例中提供一種傳聲器,關於傳聲器的具體內容可以參見以下內容。 In some embodiments, when the microphone 100 is used as an air conduction microphone (e.g., an air conduction microphone), the acoustic cavity 140 can be acoustically connected to the outside of the microphone 100 through the hole 111, so that there is a gas (e.g., air) with a certain air pressure in the acoustic cavity 140. The gas inside the acoustic cavity 140 will cause the air inside the acoustic cavity 140 to vibrate during the process of the sound signal being transmitted from the hole 111 through the acoustic cavity 140 to the acoustic-to-electric conversion component 120. The vibration acts on the acoustic-to-electric conversion component 120 to generate vibration, and at the same time, it will bring a larger background noise to the microphone 100. On the other hand, when the acoustic-to-electric conversion component 120 receives a sound signal and generates vibration, the acoustic-to-electric conversion component 120 will rub against the gas inside the acoustic cavity 140, increasing the air damping inside the acoustic cavity 140, thereby reducing the Q value of the microphone 100. In order to solve the above problem, a microphone is provided in the embodiment of the specification of this application. The specific content of the microphone can be found in the following content.

圖2係根據本申請案一些實施例所示的傳聲器的結構示意圖。如圖2所示,傳聲器200可以包括殼體結構210、聲電轉換組件220和處理器230。圖2所示的傳聲器200可以與圖1所示的傳聲器100相同或相似。例如,傳聲器200的殼體結構210與傳聲器100的殼體結構110相同或相似。又例如,傳聲器200的聲電轉換組件220與傳聲器100的聲電轉換組件120相同或相似。關於傳聲器200的更多結構(例如,處理器230、導線270等)可以參考圖1及其相關描述。 FIG2 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG2, the microphone 200 may include a housing structure 210, an acoustic-to-electric conversion component 220, and a processor 230. The microphone 200 shown in FIG2 may be the same as or similar to the microphone 100 shown in FIG1. For example, the housing structure 210 of the microphone 200 is the same as or similar to the housing structure 110 of the microphone 100. For another example, the acoustic-to-electric conversion component 220 of the microphone 200 is the same as or similar to the acoustic-to-electric conversion component 120 of the microphone 100. For more structures of the microphone 200 (e.g., the processor 230, the wire 270, etc.), please refer to FIG1 and its related description.

在一些實施例中,傳聲器200與傳聲器100的區別之處在於,傳聲器200還可以包括振動拾取部260。振動拾取部260位於殼體結構210的聲學腔體內,振動拾取部260的周側可以與殼體結構210的側壁連接,從而將所述聲學腔體分隔為第一聲學腔體240和第二聲學腔體250。在一些實施例中,傳聲器200可以包括一個或多個孔部211,孔部211可以位於第一聲學腔體240對應的殼體結構210的側壁處,孔部211可以將第一聲學腔體240與傳聲器200外部連通。外部的聲音信號可以通過孔部211進入第一聲學腔體240,並引起第一聲學腔體240內的空氣產生振動。振動拾取部260可以拾取第一聲學腔體240內的空氣振動並將振動信號傳遞至聲電轉換組件220。聲電轉換組件220接收振動拾取部260的振動信號並將振動信號轉換成電信號。 In some embodiments, the microphone 200 is different from the microphone 100 in that the microphone 200 may further include a vibration pickup portion 260. The vibration pickup portion 260 is located in the acoustic cavity of the housing structure 210, and the periphery of the vibration pickup portion 260 may be connected to the side wall of the housing structure 210, thereby dividing the acoustic cavity into a first acoustic cavity 240 and a second acoustic cavity 250. In some embodiments, the microphone 200 may include one or more holes 211, and the holes 211 may be located at the side wall of the housing structure 210 corresponding to the first acoustic cavity 240, and the holes 211 may connect the first acoustic cavity 240 with the outside of the microphone 200. The external sound signal can enter the first acoustic cavity 240 through the hole 211 and cause the air in the first acoustic cavity 240 to vibrate. The vibration pickup portion 260 can pick up the air vibration in the first acoustic cavity 240 and transmit the vibration signal to the acoustic-to-electric conversion component 220. The acoustic-to-electric conversion component 220 receives the vibration signal from the vibration pickup portion 260 and converts the vibration signal into an electrical signal.

在一些實施例中,振動拾取部260的材料可以包括但不限於半導 體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、碳化矽等。在一些實施例中,金屬材料可以包括但不限於銅、鋁、鉻、鈦、金等。在一些實施例中,金屬合金可以包括但不限於銅鋁合金、銅金合金、鈦合金、鋁合金等。在一些實施例中,有機材料可以包括但不限於聚醯亞胺、聚對二甲苯、聚二甲基矽氧烷、矽凝膠、矽膠等。在一些實施例中,振動拾取部260的結構可以是板狀結構、柱狀結構等。 In some embodiments, the material of the vibration pickup portion 260 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, semiconductor materials may include but are not limited to silicon, silicon dioxide, silicon nitride, silicon carbide, etc. In some embodiments, metal materials may include but are not limited to copper, aluminum, chromium, titanium, gold, etc. In some embodiments, metal alloys may include but are not limited to copper-aluminum alloys, copper-gold alloys, titanium alloys, aluminum alloys, etc. In some embodiments, organic materials may include but are not limited to polyimide, polyparaxylene, polydimethylsiloxane, silicone gel, silicone, etc. In some embodiments, the structure of the vibration pickup portion 260 may be a plate structure, a columnar structure, etc.

在一些實施例中,聲電轉換組件220和處理器230可以位於第二聲學腔體250內。其中,第二聲學腔體250為真空腔體。在一些實施例中,聲電轉換組件220位於第二聲學腔體250中,避免了聲電轉換組件220與第二聲學腔體250中的空氣相接觸,進而解決了聲電轉換組件220在聲電轉換流程中第二聲學腔體250內部空氣振動帶來的影響,也就是說解決了傳聲器200底噪較大的問題。另一方面,聲電轉換組件220位於第二聲學腔體250中,可以避免聲電轉換組件220在振動的流程中與第二聲學腔體250內部的空氣進行摩擦,從而降低第二聲學腔體250內部的空氣阻尼,提高傳聲器200的Q值。在一些實施例中,第二聲學腔體250內部的真空度可以小於100Pa。在一些實施例中,第二聲學腔體250內部的真空度可以為10-6Pa至100Pa。在一些實施例中,第二聲學腔體250內部的真空度可以為10-7Pa至100Pa。 In some embodiments, the acoustic-to-electric conversion component 220 and the processor 230 may be located in the second acoustic cavity 250. The second acoustic cavity 250 is a vacuum cavity. In some embodiments, the acoustic-to-electric conversion component 220 is located in the second acoustic cavity 250, which avoids the acoustic-to-electric conversion component 220 from contacting the air in the second acoustic cavity 250, thereby solving the influence of the acoustic-to-electric conversion component 220 on the vibration of the air inside the second acoustic cavity 250 during the acoustic-to-electric conversion process, that is, solving the problem of the large background noise of the microphone 200. On the other hand, the acoustic-to-electric conversion component 220 is located in the second acoustic cavity 250, which can prevent the acoustic-to-electric conversion component 220 from rubbing against the air inside the second acoustic cavity 250 during the vibration process, thereby reducing the air damping inside the second acoustic cavity 250 and improving the Q value of the microphone 200. In some embodiments, the vacuum degree inside the second acoustic cavity 250 can be less than 100Pa. In some embodiments, the vacuum degree inside the second acoustic cavity 250 can be 10-6Pa to 100Pa. In some embodiments, the vacuum degree inside the second acoustic cavity 250 can be 10-7Pa to 100Pa.

為了便於理解聲電轉換組件,在一些實施例中,傳聲器的聲電轉換組件可以近似等效於彈簧-質量-阻尼系統。當傳聲器工作時,彈簧-質量-阻尼系統可能會在激勵源(例如,振動拾取部的振動)的作用下發生振動。圖3係根據本申請案的一些實施例所示的聲電轉換組件的彈簧-質量-阻尼系統的示意圖。如圖3所示,彈簧-質量-阻尼系統可以根據微分方程式(1)進行移動;

Figure 111128508-A0305-02-0011-1
其中M表示彈簧-質量-阻尼系統的質量、x表示彈簧-質量-阻尼系統的位移、R表示彈簧-質量-阻尼系統的阻尼、K表示彈簧-質量-阻尼的彈性係數、F表示驅動力的振幅、ω表示外力的圓形頻率。 To facilitate understanding of the acoustic-to-electric conversion assembly, in some embodiments, the acoustic-to-electric conversion assembly of the microphone can be approximately equivalent to a spring-mass-damper system. When the microphone is working, the spring-mass-damper system may vibrate under the action of an excitation source (e.g., the vibration of the vibration pickup). FIG. 3 is a schematic diagram of a spring-mass-damper system of an acoustic-to-electric conversion assembly according to some embodiments of the present application. As shown in FIG. 3 , the spring-mass-damper system can move according to differential equation (1);
Figure 111128508-A0305-02-0011-1
Where M represents the mass of the spring-mass-damper system, x represents the displacement of the spring-mass-damper system, R represents the damping of the spring-mass-damper system, K represents the elastic coefficient of the spring-mass-damper, F represents the amplitude of the driving force, and ω represents the circular frequency of the external force.

可以求解微分方程式(1)以獲得穩態(2)下的位移;x=x a cos(ωt-θ),(2)其中,x表示傳聲器工作時彈簧-質量-阻尼系統的變形等於輸出電信號的值、x a =

Figure 111128508-A0305-02-0012-2
x a 表示輸出位移、Z表示機械阻抗、θ表示振蕩相位。 The differential equation (1) can be solved to obtain the displacement in the steady state (2); x = x a cos( ωt - θ ), (2) where x represents the deformation of the spring-mass-damper system when the microphone is working, which is equal to the value of the output electrical signal, and x a =
Figure 111128508-A0305-02-0012-2
Here, xa represents output displacement, Z represents mechanical impedance, and θ represents oscillation phase.

位移振幅之比A的歸一化可描述為方程式(3);

Figure 111128508-A0305-02-0012-3
The normalized displacement amplitude ratio A can be described as equation (3);
Figure 111128508-A0305-02-0012-3

其中,

Figure 111128508-A0305-02-0012-8
x a0表示穩態下的位移幅度(或當ω=0時的位移 幅度)、
Figure 111128508-A0305-02-0012-5
Figure 111128508-A0305-02-0012-6
表示外力頻率與固有頻率之比、ω0=K/M中ω0表示振動的圓 周頻率、
Figure 111128508-A0305-02-0012-7
Q m 表示機械質量因數。 in,
Figure 111128508-A0305-02-0012-8
where x a 0 represents the displacement amplitude in the steady state (or the displacement amplitude when ω=0),
Figure 111128508-A0305-02-0012-5
middle
Figure 111128508-A0305-02-0012-6
Represents the ratio of the external force frequency to the natural frequency. In ω 0 = K/M , ω 0 represents the circular frequency of vibration.
Figure 111128508-A0305-02-0012-7
Qm represents the mechanical quality factor.

圖4係根據本申請案的一些實施例所示的彈簧-質量-阻尼系統的位移共振曲線的示例性歸一化的示意圖。橫軸可以表示彈簧-質量-阻尼系統的實際振動頻率與其固有頻率的比值,縱軸可以表示彈簧-質量-阻尼系統歸一化位移。可以理解的是,圖4中的各個曲線可以分別表示具有不同參數的彈簧-質量-阻尼系統的位移共振曲線。在一些實施例中,傳聲器可以通過聲電轉換組件和殼體結構之間的相對位移來產生電信號。例如,駐極體傳聲器可以根據變形的振膜與基板之間的距離的變化來產生電信號。作為另一示例,懸臂樑骨傳導傳聲器可以根據由變形的懸臂樑結構引起的逆壓電效應來產生電信號。在一些實施例中,懸臂樑結構變形的位移越大,傳聲器輸出的電信號就越大。如圖4所示,當彈簧-質量-阻尼系統的實際振動頻率與其固有頻率相同或近似相同時(即彈簧-質量-阻尼系統的實際振動頻率與其固有頻率的比值ω/ω 0等於或近似等於1時),彈簧-質量-阻尼系統的歸一化位移越大,並且位移共振曲線中諧振峰的3dB帶寬(這 裡可以理解為諧振頻率範圍)越窄。結合上述方程式(3)可知,彈簧-質量-阻尼系統的歸一化位移越大,傳聲器的Q值越大。 FIG4 is a schematic diagram of an exemplary normalized displacement resonance curve of a spring-mass-damper system according to some embodiments of the present application. The horizontal axis may represent the ratio of the actual vibration frequency of the spring-mass-damper system to its natural frequency, and the vertical axis may represent the normalized displacement of the spring-mass-damper system. It is understood that each curve in FIG4 may represent a displacement resonance curve of a spring-mass-damper system with different parameters. In some embodiments, a microphone may generate an electrical signal through a relative displacement between an acoustic-electric conversion assembly and a housing structure. For example, a stationary microphone may generate an electrical signal according to a change in the distance between a deformed diaphragm and a substrate. As another example, a cantilever beam conduction microphone can generate an electrical signal based on the reverse piezoelectric effect caused by the deformed cantilever beam structure. In some embodiments, the greater the displacement of the cantilever beam structure deformation, the greater the electrical signal output by the microphone. As shown in FIG4 , when the actual vibration frequency of the spring-mass-damper system is the same as or approximately the same as its natural frequency (i.e., the ratio ω / ω 0 of the actual vibration frequency of the spring-mass-damper system to its natural frequency is equal to or approximately equal to 1), the greater the normalized displacement of the spring-mass-damper system, and the narrower the 3dB bandwidth (here can be understood as the harmonic frequency range) of the resonant peak in the displacement resonance curve. Combining the above equation (3), it can be seen that the larger the normalized displacement of the spring-mass-damper system, the larger the Q value of the microphone.

圖5係根據本申請案一些實施例所示的傳聲器的結構示意圖。如圖5所示,傳聲器500可以包括殼體結構510、聲電轉換組件520、振動拾取部522和振動傳遞部523。其中,殼體結構510可以被配置為承載振動拾取部522、振動傳遞部523和聲電轉換組件520。在一些實施例中,殼體結構510可以是長方體、圓柱體、圓台等規則結構體或其他不規則結構體。在一些實施例中,殼體結構510為內部中空的結構體,殼體結構510可以獨立形成聲學腔體,振動拾取部522、振動傳遞部523和聲電轉換組件520可以位於該聲學腔體內。在一些實施例中,殼體結構510的材質可以包括但不限於金屬、合金材料、高分子材料(例如,丙烯腈-丁二烯-苯乙烯共聚物、聚氯乙烯、聚碳酸酯、聚丙烯等)等中的一種或多種。在一些實施例中,振動拾取部522的周側可以與殼體結構510的側壁連接,從而將殼體結構510形成的聲學腔體分隔形成多個腔體,包括第一聲學腔體530和第二聲學腔體540。 FIG5 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG5 , the microphone 500 may include a housing structure 510, an acoustic-to-electric conversion assembly 520, a vibration pickup portion 522, and a vibration transmission portion 523. The housing structure 510 may be configured to carry the vibration pickup portion 522, the vibration transmission portion 523, and the acoustic-to-electric conversion assembly 520. In some embodiments, the housing structure 510 may be a regular structure such as a cuboid, a cylinder, a frustum, or other irregular structures. In some embodiments, the housing structure 510 is a structure with a hollow interior, and the housing structure 510 may independently form an acoustic cavity, and the vibration pickup portion 522, the vibration transmission portion 523, and the acoustic-to-electric conversion assembly 520 may be located in the acoustic cavity. In some embodiments, the material of the housing structure 510 may include but is not limited to one or more of metal, alloy material, polymer material (e.g., acrylonitrile-butadiene-styrene copolymer, polyvinyl chloride, polycarbonate, polypropylene, etc.). In some embodiments, the periphery of the vibration pickup portion 522 may be connected to the side wall of the housing structure 510, thereby separating the acoustic cavity formed by the housing structure 510 into multiple cavities, including a first acoustic cavity 530 and a second acoustic cavity 540.

在一些實施例中,殼體結構510與第一聲學腔體530對應的側壁上可以開設有一個或多個孔部511,一個或多個孔部511可以位於第一聲學腔體530處並將外部聲音信號導入第一聲學腔體530。在一些實施例中,外部聲音信號可以從孔部511進入傳聲器500的第一聲學腔體530並引起第一聲學腔體530內的空氣產生振動。振動拾取部522可以拾取空氣振動信號並將振動信號傳遞至聲電轉換組件520,聲電轉換組件520接收該振動信號並將振動信號轉換為電信號輸出。 In some embodiments, one or more holes 511 may be provided on the side wall of the housing structure 510 corresponding to the first acoustic cavity 530. The one or more holes 511 may be located at the first acoustic cavity 530 and guide the external sound signal into the first acoustic cavity 530. In some embodiments, the external sound signal may enter the first acoustic cavity 530 of the microphone 500 from the hole 511 and cause the air in the first acoustic cavity 530 to vibrate. The vibration pickup portion 522 may pick up the air vibration signal and transmit the vibration signal to the acoustic-electric conversion component 520. The acoustic-electric conversion component 520 receives the vibration signal and converts the vibration signal into an electrical signal for output.

在一些實施例中,振動拾取部522可以包括由上至下依次設置的第一振動拾取部5221和第二振動拾取部5222。第一振動拾取部5221和第二振動拾取部5222可以通過其周側與殼體結構510連接,第一振動拾取部5221和第二振動拾取部5222的部分結構可以回應於通過孔部511進入傳聲器500的聲音信號產 生振動。在一些實施例中,振動拾取部522的材料可以包括但不限於半導體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、碳化矽等。在一些實施例中,金屬材料可以包括但不限於銅、鋁、鉻、鈦、金等。在一些實施例中,金屬合金可以包括但不限於銅鋁合金、銅金合金、鈦合金、鋁合金等。在一些實施例中,有機材料可以包括但不限於聚醯亞胺、聚對二甲苯、聚二甲基矽氧烷、矽凝膠、矽膠等。在一些實施例中,振動拾取部522的結構可以是板狀結構、柱狀結構等。 In some embodiments, the vibration pickup portion 522 may include a first vibration pickup portion 5221 and a second vibration pickup portion 5222 arranged sequentially from top to bottom. The first vibration pickup portion 5221 and the second vibration pickup portion 5222 may be connected to the housing structure 510 through their peripheries, and a portion of the first vibration pickup portion 5221 and the second vibration pickup portion 5222 may vibrate in response to a sound signal entering the microphone 500 through the hole portion 511. In some embodiments, the material of the vibration pickup portion 522 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, the semiconductor material may include but is not limited to silicon, silicon dioxide, silicon nitride, silicon carbide, etc. In some embodiments, the metal material may include but is not limited to copper, aluminum, chromium, titanium, gold, etc. In some embodiments, the metal alloy may include but is not limited to copper-aluminum alloy, copper-gold alloy, titanium alloy, aluminum alloy, etc. In some embodiments, the organic material may include but is not limited to polyimide, polyparaxylene, polydimethylsiloxane, silicone gel, silicone, etc. In some embodiments, the structure of the vibration pickup portion 522 may be a plate structure, a columnar structure, etc.

在一些實施例中,振動拾取部522可以包括彈性部和固定部。僅作為示例,圖6係根據本申請案一些實施例所示的傳聲器的結構示意圖。如圖6所示,第一振動拾取部5221可以包括第一彈性部52211和第一固定部52212。第一彈性部52211的一端與殼體結構510的側壁連接,第一彈性部52211的另一端與第一固定部52212連接,使得第一彈性部52211連接於第一固定部52212和殼體結構510的內壁之間。第二振動拾取部5222可以包括第二彈性部52221和第二固定部52222。第二彈性部52221的一端與殼體結構510的側壁連接,第二彈性部52221的另一端與第二固定部52222連接,使得第二彈性部52221連接於第二固定部52222與殼體結構510的內壁之間。 In some embodiments, the vibration pickup portion 522 may include an elastic portion and a fixed portion. As an example only, FIG. 6 is a schematic diagram of the structure of a microphone shown in some embodiments of the present application. As shown in FIG. 6, the first vibration pickup portion 5221 may include a first elastic portion 52211 and a first fixed portion 52212. One end of the first elastic portion 52211 is connected to the side wall of the shell structure 510, and the other end of the first elastic portion 52211 is connected to the first fixed portion 52212, so that the first elastic portion 52211 is connected between the first fixed portion 52212 and the inner wall of the shell structure 510. The second vibration pickup portion 5222 may include a second elastic portion 52221 and a second fixed portion 52222. One end of the second elastic part 52221 is connected to the side wall of the shell structure 510, and the other end of the second elastic part 52221 is connected to the second fixed part 52222, so that the second elastic part 52221 is connected between the second fixed part 52222 and the inner wall of the shell structure 510.

在一些實施例中,振動傳遞部523可以位於第一振動拾取部5221和第二振動拾取部5222之間。振動傳遞部523的上表面與第一振動拾取部5221的下表面連接,振動傳遞部523的下表面與第二振動拾取部5222的上表面連接。具體地,振動傳遞部523、第一振動拾取部5221的第一固定部52212、第二振動拾取部5222的第二固定部52222之間可以形成真空腔體550,聲電轉換組件520可以位於真空腔體550內。具體地,聲電轉換組件520的一端可以與振動傳遞部523的內壁連接,聲電轉換組件520的另一端可以懸空設置於真空腔體550中。在一些實施例中,振動拾取部522(例如,第一振動拾取部5221的第一彈性部52211、第二振 動拾取部5222的第二彈性部52221)拾取的振動可以通過振動傳遞部523傳遞至聲電轉換組件520。在一些實施例中,振動傳遞部523的材料可以包括但不限於半導體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,振動傳遞部523的材料與振動拾取部522的材料可以相同或不同。在一些實施例中,振動傳遞部523與振動拾取部522可以是一體成型的結構。在一些實施例中,振動傳遞部523與振動拾取部522也可以是相對獨立的結構。在一些實施例中,振動傳遞部523可以是管狀結構、環形結構、四邊形、五邊形等規則及/或不規則多邊形結構。 In some embodiments, the vibration transmission part 523 may be located between the first vibration pickup part 5221 and the second vibration pickup part 5222. The upper surface of the vibration transmission part 523 is connected to the lower surface of the first vibration pickup part 5221, and the lower surface of the vibration transmission part 523 is connected to the upper surface of the second vibration pickup part 5222. Specifically, a vacuum cavity 550 may be formed between the vibration transmission part 523, the first fixing part 52212 of the first vibration pickup part 5221, and the second fixing part 52222 of the second vibration pickup part 5222, and the acoustic-electric conversion assembly 520 may be located in the vacuum cavity 550. Specifically, one end of the acoustic-to-electric conversion assembly 520 may be connected to the inner wall of the vibration transmission part 523, and the other end of the acoustic-to-electric conversion assembly 520 may be suspended in the vacuum chamber 550. In some embodiments, the vibration picked up by the vibration pickup part 522 (e.g., the first elastic part 52211 of the first vibration pickup part 5221, the second elastic part 52221 of the second vibration pickup part 5222) may be transmitted to the acoustic-to-electric conversion assembly 520 through the vibration transmission part 523. In some embodiments, the material of the vibration transmission part 523 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, the material of the vibration transmission part 523 may be the same as or different from the material of the vibration pickup part 522. In some embodiments, the vibration transmission part 523 and the vibration pickup part 522 may be an integrally formed structure. In some embodiments, the vibration transmission part 523 and the vibration pickup part 522 may also be relatively independent structures. In some embodiments, the vibration transmission part 523 may be a tubular structure, an annular structure, a quadrilateral, a pentagon, or other regular and/or irregular polygonal structure.

聲電轉換組件520設置於真空腔體550中,可以避免聲電轉換組件520與真空腔體550內的空氣相接觸,解決了聲電轉換組件520在振動流程中真空腔體550內部空氣振動帶來的影響,進而解決了傳聲器500底噪較大的問題。另一方面,聲電轉換組件520位於真空腔體550中,可以避免聲電轉換組件520與真空腔體550內部的空氣進行摩擦,從而降低真空腔體550內部的空氣阻尼,提高傳聲器500的Q值。為了提高傳聲器500的輸出效果,在一些實施例中,真空腔體550內部的真空度可以小於100Pa。在一些實施例中,真空腔體550內部的真空度可以為10-6Pa至100Pa。在一些實施例中,真空腔體550內部的真空度可以為10-7Pa至100Pa。 The acoustic-to-electric conversion component 520 is disposed in the vacuum cavity 550, which can prevent the acoustic-to-electric conversion component 520 from contacting the air in the vacuum cavity 550, solve the influence of the acoustic-to-electric conversion component 520 on the vibration process of the air in the vacuum cavity 550, and further solve the problem of the large background noise of the microphone 500. On the other hand, the acoustic-to-electric conversion component 520 is located in the vacuum cavity 550, which can prevent the acoustic-to-electric conversion component 520 from rubbing against the air in the vacuum cavity 550, thereby reducing the air damping in the vacuum cavity 550 and improving the Q value of the microphone 500. In order to improve the output effect of the microphone 500, in some embodiments, the vacuum degree in the vacuum cavity 550 can be less than 100Pa. In some embodiments, the vacuum degree inside the vacuum chamber 550 may be 10 −6 Pa to 100 Pa. In some embodiments, the vacuum degree inside the vacuum chamber 550 may be 10 −7 Pa to 100 Pa.

在一些實施例中,第一固定部52212、第二固定部52222的材料可以與第一彈性部52211、第二彈性部52221的材料不同。例如,在一些實施例中,振動拾取部522的固定部的剛度可以大於彈性部的剛度,即第一固定部52212的剛度可以大於第一彈性部52211的剛度及/或第二固定部52222的剛度可以大於第二彈性部52221的剛度。第一彈性部52211及/或第二彈性部52221可以回應於外部聲音信號產生振動,並將振動信號傳遞至聲電轉換組件520。第一固定部52212和第二固定部52222具有較大的剛度,以保證第一固定部52212、第二固定部52222 和振動傳遞部523形成的真空腔體550可以不受外部氣壓的影響。在一些實施例中,為保證真空腔體550可以不受外部氣壓的影響,振動拾取部522的固定部(例如,第一固定部52212、第二固定部52222)的楊氏模量可以大於60GPa。在一些實施例中,振動拾取部522的固定部(例如,第一固定部52212、第二固定部52222)的楊氏模量可以大於50GPa。在一些實施例中,振動拾取部522的固定部(例如,第一固定部52212、第二固定部52222)的楊氏模量可以大於40GPa。 In some embodiments, the materials of the first fixing portion 52212 and the second fixing portion 52222 may be different from the materials of the first elastic portion 52211 and the second elastic portion 52221. For example, in some embodiments, the rigidity of the fixing portion of the vibration pickup portion 522 may be greater than the rigidity of the elastic portion, that is, the rigidity of the first fixing portion 52212 may be greater than the rigidity of the first elastic portion 52211 and/or the rigidity of the second fixing portion 52222 may be greater than the rigidity of the second elastic portion 52221. The first elastic portion 52211 and/or the second elastic portion 52221 may generate vibrations in response to external sound signals and transmit the vibration signals to the acoustic-to-electric conversion assembly 520. The first fixing part 52212 and the second fixing part 52222 have a relatively large rigidity to ensure that the vacuum cavity 550 formed by the first fixing part 52212, the second fixing part 52222 and the vibration transmission part 523 is not affected by the external air pressure. In some embodiments, in order to ensure that the vacuum cavity 550 is not affected by the external air pressure, the Young's modulus of the fixing part of the vibration pickup part 522 (for example, the first fixing part 52212, the second fixing part 52222) can be greater than 60GPa. In some embodiments, the Young's modulus of the fixing part of the vibration pickup part 522 (for example, the first fixing part 52212, the second fixing part 52222) can be greater than 50GPa. In some embodiments, the Young's modulus of the fixed portion (e.g., the first fixed portion 52212, the second fixed portion 52222) of the vibration pickup portion 522 may be greater than 40 GPa.

在一些實施例中,為保證真空腔體可以不受外部氣壓的影響,傳聲器還可以包括加固件,加固件可以位於真空腔體對應的振動拾取部的上表面或下表面,從而提高真空腔體對應的部分振動拾取部的剛度。僅作為示例,圖7係根據本申請案一些實施例所示的傳聲器的結構示意圖。如圖7所示,傳聲器500還可以包括加固件560。加固件560可以位於真空腔體550對應的振動拾取部522的上表面或下表面。具體地,加固件560可以分別位於第一振動拾取部5221的下表面、第二振動拾取部5222的上表面,加固件560的周側與振動傳遞部523的內壁連接。在一些實施例中,加固件560的結構可以是板狀結構、柱狀結構等,加固件560的結構可以根據振動傳遞部523的形狀和結構進行適應性調整。需要注意的是,加固件560的位置不限於圖7所示的真空腔體550的內部,還可以位於其他位置。例如,加固件560還可以位於真空腔體550的外部。具體地,加固件560可以位於第一振動拾取部5221的上表面、第二振動拾取部5222的下表面。又例如,加固件560還可以同時位於真空腔體550的內部和外部。具體地,加固件560可以位於第一振動拾取部5221的上表面、第二振動拾取部5222的上表面,或者加固件560可以位於第一振動拾取部5221的上表面、第二振動拾取部5222的下表面,或者加固件560可以位於第一振動拾取部5221的下表面、第二振動拾取部5222的下表面,或者加固件560可以位於第一振動拾取部5221的下表面、第二振動拾取部5222的上表面,又或者加固件560可以位於第一振動拾取部5221的上表面和下表 面、第二振動拾取部5222的上表面和下表面。關於加固件560的位置不限於上述的描述,能夠達到保證真空腔體不受外部氣壓的影響的作用均在本說明書的保護範圍內。 In some embodiments, in order to ensure that the vacuum cavity is not affected by the external air pressure, the microphone may further include a reinforcement member, which may be located on the upper surface or lower surface of the vibration pickup portion corresponding to the vacuum cavity, thereby improving the rigidity of the portion of the vibration pickup portion corresponding to the vacuum cavity. As an example only, FIG. 7 is a schematic diagram of the structure of the microphone shown in some embodiments of the present application. As shown in FIG. 7, the microphone 500 may further include a reinforcement member 560. The reinforcement member 560 may be located on the upper surface or lower surface of the vibration pickup portion 522 corresponding to the vacuum cavity 550. Specifically, the reinforcement member 560 may be located on the lower surface of the first vibration pickup portion 5221 and the upper surface of the second vibration pickup portion 5222, respectively, and the periphery of the reinforcement member 560 is connected to the inner wall of the vibration transmission portion 523. In some embodiments, the structure of the reinforcement 560 may be a plate-like structure, a columnar structure, etc., and the structure of the reinforcement 560 may be adaptively adjusted according to the shape and structure of the vibration transmission part 523. It should be noted that the position of the reinforcement 560 is not limited to the inside of the vacuum cavity 550 shown in FIG. 7, and may also be located at other positions. For example, the reinforcement 560 may also be located outside the vacuum cavity 550. Specifically, the reinforcement 560 may be located on the upper surface of the first vibration pickup part 5221 and the lower surface of the second vibration pickup part 5222. For another example, the reinforcement 560 may also be located inside and outside the vacuum cavity 550 at the same time. Specifically, the reinforcing member 560 may be located on the upper surface of the first vibration pickup portion 5221 and the upper surface of the second vibration pickup portion 5222, or the reinforcing member 560 may be located on the upper surface of the first vibration pickup portion 5221 and the lower surface of the second vibration pickup portion 5222, or the reinforcing member 560 may be located on the lower surface of the first vibration pickup portion 5221 and the lower surface of the second vibration pickup portion 5222, or the reinforcing member 560 may be located on the lower surface of the first vibration pickup portion 5221 and the upper surface of the second vibration pickup portion 5222, or the reinforcing member 560 may be located on the upper and lower surfaces of the first vibration pickup portion 5221 and the upper and lower surfaces of the second vibration pickup portion 5222. The position of the reinforcement 560 is not limited to the above description, and any function that can ensure that the vacuum chamber is not affected by external air pressure is within the scope of protection of this specification.

在一些實施例中,為保證真空腔體550可以不受外部氣壓的影響,加固件560的剛度大於振動拾取部522的剛度。在一些實施例中,加固件560的楊氏模量可以大於60GPa。在一些實施例中,加固件560的楊氏模量可以大於50GPa。在一些實施例中,加固件560的楊氏模量可以大於40GPa。在一些實施例中,加固件560的材料可以包括但不限於半導體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、碳化矽等。在一些實施例中,金屬材料可以包括但不限於銅、鋁、鉻、鈦、金等。在一些實施例中,金屬合金可以包括但不限於銅鋁合金、銅金合金、鈦合金、鋁合金等。在一些實施例中,有機材料可以包括但不限於聚醯亞胺、聚對二甲苯、聚二甲基矽氧烷、矽凝膠、矽膠等。 In some embodiments, to ensure that the vacuum chamber 550 is not affected by the external air pressure, the stiffness of the reinforcement 560 is greater than the stiffness of the vibration pickup portion 522. In some embodiments, the Young's modulus of the reinforcement 560 may be greater than 60 GPa. In some embodiments, the Young's modulus of the reinforcement 560 may be greater than 50 GPa. In some embodiments, the Young's modulus of the reinforcement 560 may be greater than 40 GPa. In some embodiments, the material of the reinforcement 560 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, the semiconductor material may include but is not limited to silicon, silicon dioxide, silicon nitride, silicon carbide, etc. In some embodiments, the metal material may include but is not limited to copper, aluminum, chromium, titanium, gold, etc. In some embodiments, the metal alloy may include but is not limited to copper-aluminum alloy, copper-gold alloy, titanium alloy, aluminum alloy, etc. In some embodiments, the organic material may include but is not limited to polyimide, polyparaxylene, polydimethylsiloxane, silicone gel, silicone, etc.

真空腔體550的內部氣壓遠低於真空腔體550的外部氣壓,通過在真空腔體550對應的第一振動拾取部5221及/或第二振動拾取部5222處設置加固件560,可以保證真空腔體550不受外部氣壓影響。這裡也可以理解為,通過設置加固件560可以提高真空腔體550對應的第一振動拾取部5221和第二振動拾取部5222的剛度,以避免真空腔體550對應的振動拾取部522在外部氣壓和真空腔體550內部的氣壓差作用下產生變形,從而保證傳聲器500工作時真空腔體550的體積基本保持恒定,進而保證真空腔體550內部的聲電轉換組件520正常工作。需要說明的是,傳聲器500的各部件(例如,第一振動拾取部5221、第二振動拾取部5222、振動傳遞部523、聲電轉換組件520)在生產流程中需要封裝裝置提供所需的真空度,以使得真空腔體550內部的真空度在所需範圍內。 The internal air pressure of the vacuum cavity 550 is much lower than the external air pressure of the vacuum cavity 550. By providing the reinforcing member 560 at the first vibration pickup portion 5221 and/or the second vibration pickup portion 5222 corresponding to the vacuum cavity 550, it can be ensured that the vacuum cavity 550 is not affected by the external air pressure. It can also be understood here that by providing the reinforcing member 560, the rigidity of the first vibration pickup portion 5221 and the second vibration pickup portion 5222 corresponding to the vacuum cavity 550 can be improved to prevent the vibration pickup portion 522 corresponding to the vacuum cavity 550 from being deformed under the effect of the difference between the external air pressure and the air pressure inside the vacuum cavity 550, thereby ensuring that the volume of the vacuum cavity 550 remains basically constant when the microphone 500 is working, thereby ensuring that the sound-to-electric conversion component 520 inside the vacuum cavity 550 works normally. It should be noted that the components of the microphone 500 (e.g., the first vibration pickup part 5221, the second vibration pickup part 5222, the vibration transmission part 523, and the acoustic-electric conversion assembly 520) need the packaging device to provide the required vacuum degree during the production process so that the vacuum degree inside the vacuum chamber 550 is within the required range.

需要注意的是,在可替代實施例中,振動拾取部522可以只包括 第一振動拾取部5221,第一振動拾取部5221通過其周側與殼體結構510連接,聲電轉換組件520可以與第一振動拾取部5221直接連接或間接連接。例如,聲電轉換組件520可以位於第一振動拾取部5221的上表面或下表面。又例如,聲電轉換組件520可以通過其他結構(例如,振動傳遞部523)與第一振動拾取部5221實現連接。第一振動拾取部5221可以回應於通過孔部511進入傳聲器500的聲音信號產生振動,聲電轉換組件520可以將第一振動拾取部5221或振動傳遞部523的振動轉換為電信號。 It should be noted that, in an alternative embodiment, the vibration pickup portion 522 may only include a first vibration pickup portion 5221, the first vibration pickup portion 5221 is connected to the housing structure 510 through its periphery, and the acoustic-to-electric conversion component 520 may be directly or indirectly connected to the first vibration pickup portion 5221. For example, the acoustic-to-electric conversion component 520 may be located on the upper surface or the lower surface of the first vibration pickup portion 5221. For another example, the acoustic-to-electric conversion component 520 may be connected to the first vibration pickup portion 5221 through other structures (e.g., the vibration transmission portion 523). The first vibration pickup portion 5221 can generate vibration in response to the sound signal entering the microphone 500 through the hole portion 511, and the sound-to-electric conversion component 520 can convert the vibration of the first vibration pickup portion 5221 or the vibration transmission portion 523 into an electrical signal.

在一些實施例中,聲電轉換組件520可以包括一個或多個聲電轉換組件。在一些實施例中,多個聲電轉換組件520可以間隔分佈於振動傳遞部523的內壁。需要注意的是,這裡的間隔分佈可以是指水平方向(垂直於圖5中所示的A至A方向)或豎直方向(圖5中所示的A至A方向)。例如,振動傳遞部523為環形管狀結構時,在豎直方向上,多個聲電轉換組件520可以由上至下依次間隔分佈。圖8A係圖5中傳聲器沿A至A方向的截面示意圖。如圖8A所示,多個聲電轉換組件520可以依次間隔分佈振動傳遞部523的內壁上,並且在水平方向上,呈間隔分佈的多個聲電轉換組件520在同一平面上或近似平行。圖8B係圖5傳聲器沿垂直於A至A方向的截面示意圖。如圖8B所示,在水平方向上,每個聲電轉換組件520中與振動傳遞部523的固定端可以間隔分佈於振動傳遞部523的環形內壁上,聲電轉換組件520的固定端與振動傳遞部523可以近似垂直,聲電轉換組件520的另一端(也被稱為自由端)向振動傳遞部523的中心方向延伸並懸空於真空腔體550中,使得聲電轉換組件520在水平方向上呈環形分佈。在一些實施例中,振動傳遞部523為多邊形管狀結構(例如,三角形、五邊形、六邊形等)時,在水平方向上,多個聲電轉換組件520固定端也可以沿振動傳遞部523的各側壁間隔分佈。圖9A係根據本申請案一些實施例所示的聲電轉換組件在水平方向的分佈示意圖。如圖9A所示,振動傳遞部523為四邊形結構,多個聲電轉換組件520 可以交替分佈在振動傳遞部523的四個側壁上。圖9B係根據本申請案一些實施例所示的聲電轉換組件分佈示意圖。如圖9B所示,振動傳遞部523為六邊形結構,多個聲電轉換組件520可以交替分佈在振動傳遞部523的六個側壁上。在一些實施例中,多個聲電轉換組件520間隔分佈在振動傳遞部523的內壁處可以提高真空腔體550空間的利用率,從而降低傳聲器500的整體體積。 In some embodiments, the acoustic-to-electric conversion assembly 520 may include one or more acoustic-to-electric conversion assemblies. In some embodiments, a plurality of acoustic-to-electric conversion assemblies 520 may be distributed at intervals on the inner wall of the vibration transmission portion 523. It should be noted that the interval distribution here may refer to the horizontal direction (perpendicular to the A to A direction shown in FIG5 ) or the vertical direction (the A to A direction shown in FIG5 ). For example, when the vibration transmission portion 523 is an annular tubular structure, in the vertical direction, a plurality of acoustic-to-electric conversion assemblies 520 may be distributed at intervals in sequence from top to bottom. FIG8A is a schematic cross-sectional view of the microphone in FIG5 along the A to A direction. As shown in Fig. 8A, a plurality of acoustic-to-electric conversion components 520 can be sequentially spaced and distributed on the inner wall of the vibration transmission part 523, and in the horizontal direction, the plurality of acoustic-to-electric conversion components 520 spaced and distributed are on the same plane or approximately parallel. Fig. 8B is a schematic cross-sectional view of the microphone of Fig. 5 along the direction perpendicular to A to A. As shown in FIG8B , in the horizontal direction, the fixed ends of each acoustic-to-electric conversion assembly 520 and the vibration transmission part 523 can be distributed at intervals on the annular inner wall of the vibration transmission part 523, and the fixed ends of the acoustic-to-electric conversion assembly 520 and the vibration transmission part 523 can be approximately perpendicular, and the other end of the acoustic-to-electric conversion assembly 520 (also referred to as the free end) extends toward the center direction of the vibration transmission part 523 and is suspended in the vacuum cavity 550, so that the acoustic-to-electric conversion assembly 520 is distributed in an annular shape in the horizontal direction. In some embodiments, when the vibration transmission part 523 is a polygonal tubular structure (e.g., a triangle, a pentagon, a hexagon, etc.), in the horizontal direction, the fixed ends of multiple acoustic-to-electric conversion assemblies 520 can also be distributed at intervals along the side walls of the vibration transmission part 523. FIG9A is a schematic diagram of the horizontal distribution of the acoustic-to-electric conversion components shown in some embodiments of the present application. As shown in FIG9A , the vibration transmission part 523 is a quadrilateral structure, and a plurality of acoustic-to-electric conversion components 520 can be alternately distributed on the four side walls of the vibration transmission part 523. FIG9B is a schematic diagram of the distribution of the acoustic-to-electric conversion components shown in some embodiments of the present application. As shown in FIG9B , the vibration transmission part 523 is a hexagonal structure, and a plurality of acoustic-to-electric conversion components 520 can be alternately distributed on the six side walls of the vibration transmission part 523. In some embodiments, multiple acoustic-to-electric conversion components 520 are spaced and distributed on the inner wall of the vibration transmission part 523 to improve the space utilization of the vacuum cavity 550, thereby reducing the overall volume of the microphone 500.

需要注意的是,在水平方向或豎直方向上,多個聲電轉換組件520不限於在振動傳遞部523的所有內壁間隔分佈,多個聲電轉換組件520還可以設置於振動傳遞部523的一個側壁或部分側壁上,或者多個聲電轉換組件520在同一水平面上。例如,振動傳遞部523為長方體結構,多個聲電轉換組件520可以同時設置於長方體結構的一個側壁上、相對或相鄰的兩個側壁上或任意三個側壁上。關於多個聲電轉換組件520的分佈方式可以根據其數量或真空腔體550的大小進行適應性調整,在此不做進一步限定。 It should be noted that in the horizontal direction or vertical direction, the multiple acoustic-electric conversion components 520 are not limited to being distributed at intervals on all inner walls of the vibration transmission part 523. The multiple acoustic-electric conversion components 520 can also be arranged on a side wall or part of the side wall of the vibration transmission part 523, or the multiple acoustic-electric conversion components 520 are on the same horizontal plane. For example, the vibration transmission part 523 is a rectangular parallelepiped structure, and the multiple acoustic-electric conversion components 520 can be simultaneously arranged on a side wall of the rectangular parallelepiped structure, on two opposite or adjacent side walls, or on any three side walls. The distribution method of the multiple acoustic-electric conversion components 520 can be adaptively adjusted according to their number or the size of the vacuum cavity 550, and is not further limited here.

在一些實施例中,聲電轉換組件520可以包括一個懸臂樑結構,懸臂樑結構的一端可以與振動傳遞部523的內壁連接,懸臂樑結構的另一端可以懸空設置於真空腔體550中。 In some embodiments, the acoustic-electric conversion assembly 520 may include a cantilever beam structure, one end of which may be connected to the inner wall of the vibration transmission portion 523, and the other end of which may be suspended in the vacuum chamber 550.

在一些實施例中,懸臂樑結構可以包括第一電極層、壓電層、第二電極層、彈性層和基底層。其中,第一電極層、壓電層、第二電極層可以由上至下依次設置,彈性層可以位於第一電極層的上表面或第二電極層的下表面,基底層可以位於彈性層的上表面或下表面。在一些實施例中,外部聲音信號通過孔部511進入傳聲器500的第一聲學腔體530並引起第一聲學腔體530內的空氣產生振動。振動拾取部522(例如,第一彈性部52211)可以拾取空氣振動信號並將振動信號通過振動傳遞部523傳遞至聲電轉換組件520(例如,懸臂樑結構),從而使得懸臂樑結構中的彈性層在振動信號的作用下發生形變。在一些實施例中,壓電層可以基於彈性層的形變產生電信號,第一電極層和第二電極層可以對該電 信號進行採集。在一些實施例中,壓電層可以基於壓電效應,在彈性層的形變應力作用下產生電壓(電勢差),第一電極層和第二電極層可以將該電壓(電信號)匯出。 In some embodiments, the cantilever beam structure may include a first electrode layer, a piezoelectric layer, a second electrode layer, an elastic layer, and a base layer. The first electrode layer, the piezoelectric layer, and the second electrode layer may be arranged in sequence from top to bottom, the elastic layer may be located on the upper surface of the first electrode layer or the lower surface of the second electrode layer, and the base layer may be located on the upper surface or the lower surface of the elastic layer. In some embodiments, an external sound signal enters the first acoustic cavity 530 of the microphone 500 through the hole 511 and causes the air in the first acoustic cavity 530 to vibrate. The vibration pickup portion 522 (e.g., the first elastic portion 52211) can pick up air vibration signals and transmit the vibration signals to the acoustic-electric conversion component 520 (e.g., the cantilever beam structure) through the vibration transmission portion 523, so that the elastic layer in the cantilever beam structure is deformed under the action of the vibration signal. In some embodiments, the piezoelectric layer can generate an electrical signal based on the deformation of the elastic layer, and the first electrode layer and the second electrode layer can collect the electrical signal. In some embodiments, the piezoelectric layer can generate a voltage (potential difference) under the deformation stress of the elastic layer based on the piezoelectric effect, and the first electrode layer and the second electrode layer can export the voltage (electrical signal).

在一些實施例中,懸臂樑結構也可以包括一個或多個彈性層、電極層和壓電層,其中,彈性層可以位於電極層的表面,電極層可以位於壓電層的上表面或下表面。在一些實施例中,電極層可以包括第一電極和第二電極。第一電極和第二電極可以彎折成第一梳齒狀結構,第一梳齒狀結構和第二梳齒狀結構可以包括多個梳齒結構,第一梳齒狀結構的相鄰梳齒結構之間和第一梳齒狀結構的相鄰梳齒結構之間均具有一定間距,該間距可以相同或不同。其中,第一梳齒狀結構與第二梳齒狀結構相配合形成電極層,進一步地,第一梳齒狀結構的梳齒結構可以伸入第二梳齒狀結構的間距處,第二梳齒狀結構的梳齒結構可以伸入第一梳齒狀結構的間距處,從而相互配合形成電極層。第一梳齒狀結構和第二梳齒狀結構互相配合,使得第一電極和第二電極排列緊湊,但不相交。在一些實施例中,第一梳齒狀結構和第二梳齒狀結構沿懸臂樑的長度方向(例如,從固定端到自由端的方向)延伸。 In some embodiments, the cantilever beam structure may also include one or more elastic layers, electrode layers and piezoelectric layers, wherein the elastic layer may be located on the surface of the electrode layer, and the electrode layer may be located on the upper surface or the lower surface of the piezoelectric layer. In some embodiments, the electrode layer may include a first electrode and a second electrode. The first electrode and the second electrode may be bent into a first comb-shaped structure, and the first comb-shaped structure and the second comb-shaped structure may include a plurality of comb structures, and adjacent comb structures of the first comb-shaped structure and adjacent comb structures of the first comb-shaped structure both have a certain spacing, and the spacing may be the same or different. The first comb-shaped structure cooperates with the second comb-shaped structure to form an electrode layer. Furthermore, the comb-shaped structure of the first comb-shaped structure can extend into the spacing of the second comb-shaped structure, and the comb-shaped structure of the second comb-shaped structure can extend into the spacing of the first comb-shaped structure, thereby cooperating with each other to form an electrode layer. The first comb-shaped structure and the second comb-shaped structure cooperate with each other so that the first electrode and the second electrode are arranged compactly but do not intersect. In some embodiments, the first comb-shaped structure and the second comb-shaped structure extend along the length direction of the cantilever beam (for example, from the fixed end to the free end).

在一些實施例中,彈性層可以為一種或多種半導體材料支撐的膜狀結構或塊狀結構。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、氮化鎵、氧化鋅、碳化矽等。在一些實施例中,壓電層的材料可以包括壓電晶體材料和壓電陶瓷材料。壓電晶體材料是指壓電單晶體。在一些實施例中,壓電晶體材料可以包括水晶、閃鋅礦、方硼石、電氣石、紅鋅礦、GaAs、鈦酸鋇及其衍生結構晶體、KH2PO4、NaKC4H4O6.4H2O(酒石酸鉀鈉)等或其任意組合。壓電陶瓷材料是指由不同材料粉粒之間的固相反應和燒結而獲得的微細晶粒無規則集合而成的壓電多晶體。在一些實施例中,壓電陶瓷材料可以包括鈦酸鋇(BT)、鋯鈦酸鉛(PZT)、鈮酸鉛鋇鋰(PBLN)、改性鈦酸鉛(PT)、氮 化鋁(AIN)、氧化鋅(ZnO)等或其任意組合。在一些實施例中,壓電層材料還可以為壓電聚合物材料,例如聚偏氟乙烯(polyvinylidene difluoride,PVDF)等。在一些實施例中,第一電極層和第二電極層可以為導電材質結構。示例性的導電材質可以包括金屬、合金材料、金屬氧化物材料、石墨烯等或其任意組合。在一些實施例中,金屬與合金材料可以包括鎳、鐵、鉛、鉑、鈦、銅、鉬、鋅,或其任意組合。在一些實施例中,合金材料可以包括銅鋅合金、銅錫合金、銅鎳矽合金、銅鉻合金、銅銀合金等或其任意組合。在一些實施例中,金屬氧化物材料可以包括RuO2、MnO2、PbO2、NiO等或其任意組合。 In some embodiments, the elastic layer may be a film-like structure or a block-like structure supported by one or more semiconductor materials. In some embodiments, the semiconductor material may include but is not limited to silicon, silicon dioxide, silicon nitride, gallium nitride, zinc oxide, silicon carbide, etc. In some embodiments, the material of the piezoelectric layer may include piezoelectric crystal materials and piezoelectric ceramic materials. Piezoelectric crystal materials refer to piezoelectric single crystals. In some embodiments, the piezoelectric crystal material may include crystal, sphalerite, borate, electric stone, red zinc ore, GaAs, barium titanate and its derivative structure crystals, KH2PO4 , NaKC4H4O6.4H2O (sodium potassium tartrate ) , etc. or any combination thereof. Piezoelectric ceramic material refers to a piezoelectric polycrystal formed by irregular aggregation of fine grains obtained by solid phase reaction and sintering between powders of different materials. In some embodiments, the piezoelectric ceramic material may include barium titanate (BT), lead zirconium titanate (PZT), lead barium lithium niobium oxide (PBLN), modified lead titanate (PT), aluminum nitride (AIN), zinc oxide (ZnO), etc. or any combination thereof. In some embodiments, the piezoelectric layer material may also be a piezoelectric polymer material, such as polyvinylidene difluoride (PVDF), etc. In some embodiments, the first electrode layer and the second electrode layer may be a conductive material structure. Exemplary conductive materials may include metals, alloy materials, metal oxide materials, graphene, etc., or any combination thereof. In some embodiments, metal and alloy materials may include nickel, iron, lead, platinum, titanium, copper, molybdenum, zinc, or any combination thereof. In some embodiments, alloy materials may include copper-zinc alloys, copper-tin alloys, copper-nickel-silicon alloys, copper-chromium alloys, copper-silver alloys, etc., or any combination thereof. In some embodiments, metal oxide materials may include RuO 2 , MnO 2 , PbO 2 , NiO, etc., or any combination thereof.

在一些實施例中,懸臂樑結構還可以包括綁線電極層(PAD層),綁線電極層可以位於第一電極層和第二電極層上,通過外部綁線(例如,金線、鋁線等)的方式將第一電極層和第二電極層與外部電路連通,從而將第一電極層和第二電極層之間的電壓信號引出至後端處理電路。在一些實施例中,綁線電極層的材料可以包括銅箔、鈦、銅等。在一些實施例中,綁線電極層與第一電極層(或第二電極層)的材料可以相同。在一些實施例中,綁線電極層與第一電極層(或第二電極層)的材料可以不同。 In some embodiments, the cantilever beam structure may further include a bonding electrode layer (PAD layer), which may be located on the first electrode layer and the second electrode layer, and the first electrode layer and the second electrode layer are connected to an external circuit by means of an external bonding wire (e.g., a gold wire, an aluminum wire, etc.), thereby leading the voltage signal between the first electrode layer and the second electrode layer to a back-end processing circuit. In some embodiments, the material of the bonding electrode layer may include copper foil, titanium, copper, etc. In some embodiments, the material of the bonding electrode layer may be the same as that of the first electrode layer (or the second electrode layer). In some embodiments, the material of the binding electrode layer and the first electrode layer (or the second electrode layer) may be different.

在一些實施例中,可以通過設置懸臂樑結構的參數(例如,懸臂樑結構的長度、寬度、高度、材料等),使得不同懸臂樑結構分別具有不同的諧振頻率,從而對振動傳遞部523的振動信號產生不同的頻率響應。例如,可以通過設置不同長度的懸臂樑結構,使得不同長度的懸臂樑結構具有不同的諧振頻率。不同長度的懸臂樑結構對應的多個諧振頻率可以在100Hz至12000Hz的範圍內。由於懸臂樑結構對在其諧振頻率附近的振動敏感,可以認為懸臂樑結構對振動信號具有頻率選擇特性,也就是說,懸臂樑結構會主要將振動信號中在其諧振頻率附近的子帶振動信號轉化為電信號。因此,在一些實施例中,通過設置成不同長度,可以使得不同的懸臂樑結構具有不同的諧振頻率,從而在每個諧振頻率 附近分別形成子帶。例如,可以通過多個懸臂樑結構在人聲頻率範圍內設定11個子帶,11個子帶分別對應的懸臂樑結構的諧振頻率可以分別位於500Hz至700Hz、700Hz至1000Hz、1000Hz至1300Hz、1300Hz至1700Hz、1700Hz至2200Hz、2200Hz至3000Hz、3000Hz至3800Hz、3800Hz至4700Hz、4700Hz至5700Hz、5700Hz至7000Hz、7000Hz至12000Hz。需要說明的是,通過懸臂樑結構在人聲頻率範圍內設定的子帶個數可以傳聲器500的應用場景進行調整,在此不做進一步限定。 In some embodiments, the parameters of the cantilever beam structure (e.g., the length, width, height, material, etc. of the cantilever beam structure) can be set so that different cantilever beam structures have different resonant frequencies, thereby generating different frequency responses to the vibration signal of the vibration transmission part 523. For example, cantilever beam structures of different lengths can be set so that cantilever beam structures of different lengths have different resonant frequencies. The multiple resonant frequencies corresponding to cantilever beam structures of different lengths can be in the range of 100 Hz to 12000 Hz. Since the cantilever beam structure is sensitive to vibrations near its resonant frequency, it can be considered that the cantilever beam structure has a frequency-selective characteristic for the vibration signal, that is, the cantilever beam structure will mainly convert the sub-band vibration signal near its resonant frequency in the vibration signal into an electrical signal. Therefore, in some embodiments, by setting different cantilever beam structures to different lengths, different resonant frequencies can be made, thereby forming sub-bands near each resonant frequency. For example, 11 sub-bands can be set within the human voice frequency range through multiple cantilever beam structures, and the resonant frequencies of the cantilever beam structures corresponding to the 11 sub-bands can be respectively located at 500Hz to 700Hz, 700Hz to 1000Hz, 1000Hz to 1300Hz, 1300Hz to 1700Hz, 1700Hz to 2200Hz, 2200Hz to 3000Hz, 3000Hz to 3800Hz, 3800Hz to 4700Hz, 4700Hz to 5700Hz, 5700Hz to 7000Hz, and 7000Hz to 12000Hz. It should be noted that the number of sub-bands set within the human voice frequency range through the cantilever beam structure can be adjusted according to the application scenario of the microphone 500, and no further limitation is made here.

圖10係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖10所示,傳聲器1000可以包括殼體結構1010、聲電轉換組件1020、振動拾取部1022和振動傳遞部1023。圖10中所示的傳聲器1000可以與圖5和圖6中所示的傳聲器500相同或相似。例如,傳聲器1000的殼體結構1010可以與傳聲器500的殼體結構510相同或相似。又例如,傳聲器1000的第一聲學腔體1030、第二聲學腔體1040、真空腔體1050可以分別與傳聲器500的第一聲學腔體530、第二聲學腔體540、真空腔體550相同或相似。再例如,傳聲器1000的振動拾取部1022(例如,第一振動拾取部10221(例如,第一彈性部102211、第一固定部102212)、第二振動拾取部10222(例如,第二彈性部102221、第二固定部102222))可以與傳聲器500的振動拾取部522(例如,第一振動拾取部5221(例如,第一彈性部52211、第一固定部52212)、第二振動拾取部5222(例如,第二彈性部52221、第二固定部52222))相同或相似。關於傳聲器1000的更多結構(例如,孔部1011、振動傳遞部1023等)可以參考圖5和圖6及其相關描述。 FIG10 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG10 , the microphone 1000 may include a housing structure 1010, an acoustic-electric conversion assembly 1020, a vibration pickup portion 1022, and a vibration transmission portion 1023. The microphone 1000 shown in FIG10 may be the same as or similar to the microphone 500 shown in FIG5 and FIG6 . For example, the housing structure 1010 of the microphone 1000 may be the same as or similar to the housing structure 510 of the microphone 500. For another example, the first acoustic cavity 1030, the second acoustic cavity 1040, and the vacuum cavity 1050 of the microphone 1000 may be the same as or similar to the first acoustic cavity 530, the second acoustic cavity 540, and the vacuum cavity 550 of the microphone 500, respectively. For another example, the vibration pickup portion 1022 (e.g., the first vibration pickup portion 10221 (e.g., the first elastic portion 102211, the first fixed portion 102212), the second vibration pickup portion 10222 (e.g., the second elastic portion 102221, the second fixed portion 102222)) of the microphone 1000 may be the same as or similar to the vibration pickup portion 522 (e.g., the first vibration pickup portion 5221 (e.g., the first elastic portion 52211, the first fixed portion 52212), the second vibration pickup portion 5222 (e.g., the second elastic portion 52221, the second fixed portion 52222)) of the microphone 500. For more structures of the microphone 1000 (e.g., the hole portion 1011, the vibration transmission portion 1023, etc.), refer to FIG. 5 and FIG. 6 and their related descriptions.

在一些實施例中,圖10中所示的傳聲器1000與圖5所示的傳聲器500的主要區別之處在於,傳聲器1000的聲電轉換組件1020可以包括第一懸臂樑結構10211和第二懸臂樑結構10212,這裡的第一懸臂樑結構10211和第二懸臂樑結構10212相對於兩塊電極板。聲電轉換組件1020對應的第一懸臂樑結構10211 和第二懸臂樑結構10212的固定端可以與振動傳遞部1023的內壁連接,第一懸臂樑結構10211和第二懸臂樑結構10212的另一端(也叫自由端)懸空設置於真空腔體1050中。在一些實施例中,第一懸臂樑結構10211和第二懸臂樑結構10212可以相對設置,且第一懸臂樑結構10211和第二懸臂樑結構10212具有正對面積。在一些實施例中,第一懸臂樑結構10211和第二懸臂樑結構10212呈豎直排布,此時正對面積可以理解為,第一懸臂樑結構10211的下表面與第二懸臂樑結構10212的上表面相對的面積。在一些實施例中,第一懸臂樑結構10211與第二懸臂樑結構10212可以具有第一間距d1。第一懸臂樑結構10211和第二懸臂樑結構10212接收振動傳遞部1023的振動信號後,可以分別在其振動方向(第一間距d1的延長方向)上產生不同程度的形變,從而使得第一間距d1發生變化。第一懸臂樑結構10211和第二懸臂樑結構10212可以基於第一間距d1的變化,將接收到的振動傳遞部1023的振動信號轉換為電信號。 In some embodiments, the main difference between the microphone 1000 shown in FIG. 10 and the microphone 500 shown in FIG. 5 is that the acoustic-to-electrical conversion assembly 1020 of the microphone 1000 may include a first cantilever beam structure 10211 and a second cantilever beam structure 10212, where the first cantilever beam structure 10211 and the second cantilever beam structure 10212 are relative to two electrode plates. The fixed ends of the first cantilever beam structure 10211 and the second cantilever beam structure 10212 corresponding to the acoustic-electric conversion assembly 1020 can be connected to the inner wall of the vibration transmission part 1023, and the other ends (also called free ends) of the first cantilever beam structure 10211 and the second cantilever beam structure 10212 are suspended in the vacuum chamber 1050. In some embodiments, the first cantilever beam structure 10211 and the second cantilever beam structure 10212 can be arranged opposite to each other, and the first cantilever beam structure 10211 and the second cantilever beam structure 10212 have a facing area. In some embodiments, the first cantilever beam structure 10211 and the second cantilever beam structure 10212 are arranged vertically, and the facing area can be understood as the area where the lower surface of the first cantilever beam structure 10211 and the upper surface of the second cantilever beam structure 10212 are opposite. In some embodiments, the first cantilever beam structure 10211 and the second cantilever beam structure 10212 can have a first spacing d1. After receiving the vibration signal of the vibration transmission part 1023, the first cantilever beam structure 10211 and the second cantilever beam structure 10212 can respectively generate different degrees of deformation in their vibration direction (the extension direction of the first spacing d1), thereby changing the first spacing d1. The first cantilever beam structure 10211 and the second cantilever beam structure 10212 can convert the received vibration signal of the vibration transmission part 1023 into an electrical signal based on the change of the first spacing d1.

為了使第一懸臂樑結構10211與第二懸臂樑結構10212在其振動方向上產生不同程度的形變,在一些實施例中,第一懸臂樑結構10211的剛度與第二懸臂樑結構10212的剛度可以不同。在振動傳遞部1023的振動信號的作用下,剛度較小的懸臂樑結構可以產生一定程度的形變,剛度較大的懸臂樑結構可以近似認為不產生形變或小於剛度較小的懸臂樑結構產生的形變量。在一些實施例中,傳聲器1000處於工作狀態時,具有較小剛度的懸臂樑結構(例如,第二懸臂樑結構10212)可以回應於振動傳遞部1023的振動而產生形變,具有較大剛度的懸臂樑結構(例如,第一懸臂樑結構10211)可以與振動傳遞部1023一起振動而不產生形變,使得第一間距d1發生變化。 In order to make the first cantilever beam structure 10211 and the second cantilever beam structure 10212 produce different degrees of deformation in their vibration directions, in some embodiments, the stiffness of the first cantilever beam structure 10211 may be different from the stiffness of the second cantilever beam structure 10212. Under the action of the vibration signal of the vibration transmission part 1023, the cantilever beam structure with smaller stiffness may produce a certain degree of deformation, and the cantilever beam structure with larger stiffness may be approximately considered to have no deformation or a deformation amount less than that of the cantilever beam structure with smaller stiffness. In some embodiments, when the microphone 1000 is in operation, the cantilever beam structure with smaller rigidity (e.g., the second cantilever beam structure 10212) can deform in response to the vibration of the vibration transmitting portion 1023, and the cantilever beam structure with larger rigidity (e.g., the first cantilever beam structure 10211) can vibrate together with the vibration transmitting portion 1023 without deformation, so that the first spacing d1 changes.

在一些實施例中,聲電轉換組件1020中具有較小剛度的懸臂樑結構的諧振頻率可以位於人耳聽覺範圍內的頻率範圍(例如,12000Hz內)。在一些實施例中,聲電轉換組件1020中具有較大剛度的懸臂樑結構的諧振頻率可以 位於人耳不敏感的頻率範圍(例如,大於12000Hz)。在一些實施例中,聲電轉換組件1020中第一懸臂樑結構10211(或者第二懸臂樑結構10212)的剛度可以通過調整第一懸臂樑結構10211(或者第二懸臂樑結構10212)的材料、長度、寬度或厚度等來實現。在一些實施例中,通過調整聲電轉換組件1020對應的每組懸臂樑結構的參數(例如,懸臂樑結構的材料、厚度、長度、寬度等),以獲取不同對應不同諧振頻率的頻率響應。 In some embodiments, the resonant frequency of the cantilever beam structure with relatively small stiffness in the acoustic-to-electric conversion assembly 1020 may be located in a frequency range within the hearing range of the human ear (e.g., within 12000 Hz). In some embodiments, the resonant frequency of the cantilever beam structure with relatively large stiffness in the acoustic-to-electric conversion assembly 1020 may be located in a frequency range to which the human ear is insensitive (e.g., greater than 12000 Hz). In some embodiments, the stiffness of the first cantilever beam structure 10211 (or the second cantilever beam structure 10212) in the acoustic-to-electric conversion assembly 1020 can be achieved by adjusting the material, length, width or thickness of the first cantilever beam structure 10211 (or the second cantilever beam structure 10212). In some embodiments, by adjusting the parameters of each group of cantilever beam structures corresponding to the acoustic-to-electric conversion assembly 1020 (for example, the material, thickness, length, width, etc. of the cantilever beam structure), different frequency responses corresponding to different resonant frequencies can be obtained.

圖11係根據本申請案的一些實施例所示的傳聲器的頻率響應曲線示意圖。如圖11所示,橫軸表示頻率,單位是Hz,縱軸表示傳聲器輸出的聲音信號的頻率響應,單位是dB。這裡的傳聲器可以是指傳聲器500、傳聲器1000、傳聲器1200、傳聲器1300、傳聲器1500、傳聲器1600、傳聲器1700、傳聲器2000、傳聲器2100、傳聲器2200等。圖11中的各虛線可以表示傳聲器的各聲電轉換組件分別對應的頻率響應曲線。根據圖11中的各頻率響應曲線可知,每個聲電轉換組件均具有自身的諧振頻率(例如,頻率響應曲線1120的諧振頻率約為350Hz,頻率響應曲線1130的諧振頻率約為1500Hz),當外部聲音信號傳遞至傳聲器時,不同聲電轉換組件均對自身諧振頻率附近的振動信號更加敏感,因而各個聲電轉換組件輸出的電信號主要包括與其諧振頻率對應的子帶信號。在一些實施例中,各個聲電轉換組件諧振峰處的輸出遠大於其自身的平坦區輸出,通過選取各個聲電轉換部件的頻率響應曲線中靠近諧振峰的頻段,可以實現對聲音信號對應的全頻帶信號進行子帶分頻。在一些實施例中,將圖11中的各頻率響應曲線融合後可以得到信號雜訊比高、且更加平坦的傳聲器的頻率響應曲線1110。此外,通過設置不同聲電轉換組件(懸臂樑結構),可以在傳聲器系統中增加不同頻率範圍的諧振峰,提升了傳聲器在多個諧振峰附近的靈敏度,進而提升傳聲器在整個寬頻帶的靈敏度。 FIG11 is a diagram showing a frequency response curve of a microphone according to some embodiments of the present application. As shown in FIG11 , the horizontal axis represents frequency in Hz, and the vertical axis represents the frequency response of the sound signal output by the microphone in dB. The microphone here may refer to microphone 500, microphone 1000, microphone 1200, microphone 1300, microphone 1500, microphone 1600, microphone 1700, microphone 2000, microphone 2100, microphone 2200, etc. The dotted lines in FIG11 may represent the frequency response curves corresponding to the respective acoustic-to-electric conversion components of the microphone. According to the frequency response curves in Figure 11, each acoustic-to-electric conversion component has its own resonant frequency (for example, the resonant frequency of frequency response curve 1120 is approximately 350 Hz, and the resonant frequency of frequency response curve 1130 is approximately 1500 Hz). When the external sound signal is transmitted to the microphone, different acoustic-to-electric conversion components are more sensitive to the vibration signal near their own resonant frequency. Therefore, the electrical signal output by each acoustic-to-electric conversion component mainly includes the sub-band signal corresponding to its resonant frequency. In some embodiments, the output of each acoustic-to-electric conversion component at the resonance peak is much greater than its own flat area output. By selecting the frequency band close to the resonance peak in the frequency response curve of each acoustic-to-electric conversion component, the full-band signal corresponding to the sound signal can be sub-band divided. In some embodiments, after merging the frequency response curves in Figure 11, a frequency response curve 1110 of a microphone with a high signal-to-noise ratio and a flatter signal can be obtained. In addition, by setting different acoustic-to-electric conversion components (cantilever beam structures), resonance peaks of different frequency ranges can be added to the microphone system, which improves the sensitivity of the microphone near multiple resonance peaks, thereby improving the sensitivity of the microphone in the entire broadband.

通過在傳聲器中設置多個聲電轉換組件,利用聲電轉換組件(例 如,懸臂樑結構)具有不同諧振頻率的特性,可以實現對振動信號的濾波和頻帶分解,避免了傳聲器中濾波電路的複雜性和以及軟體演算法佔用計算資源較高、帶來信號失真、雜訊引入的問題,進而降低了傳聲器的複雜度和生產成本。 By setting up multiple acoustic-to-electric conversion components in the microphone and utilizing the characteristics of the acoustic-to-electric conversion components (e.g., cantilever beam structure) with different resonant frequencies, the vibration signal can be filtered and decomposed into frequency bands, thus avoiding the complexity of the filtering circuit in the microphone and the problem that the software algorithm occupies high computing resources, causes signal distortion, and introduces noise, thereby reducing the complexity and production cost of the microphone.

圖12係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖12所示,傳聲器1200可以包括殼體結構1210、聲電轉換組件1220、振動傳遞部1223和振動拾取部1222。圖12中所示的傳聲器1200可以與圖5和圖6中所示的傳聲器500相同或相似。例如,傳聲器1200的殼體結構1210可以與傳聲器500的殼體結構510相同或相似。又例如,傳聲器1200的第一聲學腔體1230、第二聲學腔體1240、真空腔體1250可以分別與傳聲器500的第一聲學腔體530、第二聲學腔體540、真空腔體550相同或相似。再例如,傳聲器1200的振動拾取部1222(例如,第一振動拾取部12221(例如,第一彈性部122211、第一固定部122212)、第二振動拾取部12222(例如,第二彈性部122221、第二固定部122222))可以與傳聲器500的振動拾取部522(例如,第一振動拾取部5221(例如,第一彈性部52211、第一固定部52212)、第二振動拾取部5222(例如,第二彈性部52221、第二固定部52222))相同或相似。關於傳聲器1200的更多結構(例如,孔部1211、振動傳遞部1223、聲電轉換組件1220等)可以參考圖5和圖6及其相關描述。 FIG12 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG12 , the microphone 1200 may include a housing structure 1210, an acoustic-electric conversion assembly 1220, a vibration transmission portion 1223, and a vibration pickup portion 1222. The microphone 1200 shown in FIG12 may be the same as or similar to the microphone 500 shown in FIG5 and FIG6 . For example, the housing structure 1210 of the microphone 1200 may be the same as or similar to the housing structure 510 of the microphone 500. For another example, the first acoustic cavity 1230, the second acoustic cavity 1240, and the vacuum cavity 1250 of the microphone 1200 may be the same as or similar to the first acoustic cavity 530, the second acoustic cavity 540, and the vacuum cavity 550 of the microphone 500, respectively. For another example, the vibration picking-up portion 1222 of the microphone 1200 (e.g., the first vibration picking-up portion 12221 (e.g., the first elastic portion 122211, the first fixed portion 122212), the second vibration picking-up portion 12222 (e.g., the second elastic portion 122221, the second fixed portion 122222)) may be the same as or similar to the vibration picking-up portion 5222 of the microphone 500 (e.g., the first vibration picking-up portion 5221 (e.g., the first elastic portion 52211, the first fixed portion 52212), the second vibration picking-up portion 5222 (e.g., the second elastic portion 52221, the second fixed portion 52222)). For more information about the structure of the microphone 1200 (e.g., the hole 1211, the vibration transmission part 1223, the acoustic-electric conversion component 1220, etc.), please refer to Figures 5 and 6 and their related descriptions.

在一些實施例中,圖12中所示的傳聲器1200與圖5所示的傳聲器500的主要區別之處在於,傳聲器1200還可以包括一個或多個膜結構1260。在一些實施例中,膜結構1260可以位於聲電轉換組件1220的上表面及/或下表面。例如,膜結構1260可以是單層膜結構,膜結構1260可以位於聲電轉換組件1220的上表面或下表面。又例如,膜結構1260可以為雙層膜,膜結構1260可以包括第一膜結構和第二膜結構,第一膜結構位於聲電轉換組件1220的上表面,第二膜結構位於聲電轉換組件1220的下表面。通過在聲電轉換組件1220的表面設置膜結構1260可以調整聲電轉換組件1220的諧振頻率,在一些實施例中,通過調整膜結構 1260的材料、尺寸(如長度、寬度)、厚度等可以影響聲電轉換組件1220的諧振頻率。一方面,可以通過調整膜結構1260的參數資訊(例如,材料、尺寸、厚度等)和聲電轉換組件1220(例如,懸臂樑結構),使得各聲電轉換組件1220在所需的頻率範圍內產生諧振。另一方面,在聲電轉換組件1220表面設置膜結構1260,可以規避傳聲器1200在超載情況下對聲電轉換組件1220造成的損壞,從而提高傳聲器1200的可靠性。 In some embodiments, the main difference between the microphone 1200 shown in FIG. 12 and the microphone 500 shown in FIG. 5 is that the microphone 1200 may further include one or more membrane structures 1260. In some embodiments, the membrane structure 1260 may be located on the upper surface and/or the lower surface of the acoustic-to-electric conversion component 1220. For example, the membrane structure 1260 may be a single-layer membrane structure, and the membrane structure 1260 may be located on the upper surface or the lower surface of the acoustic-to-electric conversion component 1220. For another example, the membrane structure 1260 may be a double-layer membrane, and the membrane structure 1260 may include a first membrane structure and a second membrane structure, the first membrane structure being located on the upper surface of the acoustic-to-electric conversion component 1220, and the second membrane structure being located on the lower surface of the acoustic-to-electric conversion component 1220. The resonant frequency of the acoustic-to-electric conversion assembly 1220 can be adjusted by arranging the membrane structure 1260 on the surface of the acoustic-to-electric conversion assembly 1220. In some embodiments, the resonant frequency of the acoustic-to-electric conversion assembly 1220 can be affected by adjusting the material, size (such as length, width), thickness, etc. of the membrane structure 1260. On the one hand, the parameter information (such as material, size, thickness, etc.) of the membrane structure 1260 and the acoustic-to-electric conversion assembly 1220 (such as a cantilever beam structure) can be adjusted so that each acoustic-to-electric conversion assembly 1220 generates resonance within a desired frequency range. On the other hand, by providing a membrane structure 1260 on the surface of the acoustic-to-electric conversion component 1220, it is possible to avoid damage to the acoustic-to-electric conversion component 1220 caused by the microphone 1200 when it is overloaded, thereby improving the reliability of the microphone 1200.

在一些實施例中,膜結構1260可以全部或局部覆蓋聲電轉換組件1220的上表面及/或下表面。例如,每個聲電轉換組件1220的上表面或下表面覆蓋有相對應的膜結構1260,膜結構1260可以全部覆蓋對應的聲電轉換組件1220的上表面或下表面,或膜結構1260可以局部覆蓋對應的聲電轉換組件1220的上表面或下表面。又例如,在水平方向上看,當多個聲電轉換組件1220同時位於同一水平面時,一個膜結構1260可以同時全部覆蓋多個在同一水平面的聲電轉換組件1220的上表面或下表面,例如,這裡的膜結構1260通過其周側與振動傳遞部1223的內壁連接,從而將真空腔體1250分隔為上下兩個相互獨立的真空腔體。再例如,膜結構1260的形狀可以與振動傳遞部1223的橫截面形狀相同,膜結構1260通過其周側與振動傳遞部1223的內壁連接,膜結構1260的中間部分可以包括一個孔部(圖12中未示出),膜結構1260可以同時局部覆蓋多個在同一水平面的聲電轉換組件1220的上表面或下表面,並使得真空腔體1250被膜結構1260可以分隔成的上下兩個連通的真空腔體。 In some embodiments, the membrane structure 1260 may fully or partially cover the upper surface and/or lower surface of the acoustic-to-electric conversion assembly 1220. For example, the upper surface or lower surface of each acoustic-to-electric conversion assembly 1220 is covered with a corresponding membrane structure 1260, and the membrane structure 1260 may fully cover the upper surface or lower surface of the corresponding acoustic-to-electric conversion assembly 1220, or the membrane structure 1260 may partially cover the upper surface or lower surface of the corresponding acoustic-to-electric conversion assembly 1220. For another example, viewed in the horizontal direction, when multiple acoustic-to-electric conversion components 1220 are simultaneously located on the same horizontal plane, a membrane structure 1260 can simultaneously cover the upper or lower surfaces of multiple acoustic-to-electric conversion components 1220 on the same horizontal plane. For example, the membrane structure 1260 here is connected to the inner wall of the vibration transmission part 1223 through its periphery, thereby dividing the vacuum cavity 1250 into two independent upper and lower vacuum cavities. For another example, the shape of the membrane structure 1260 can be the same as the cross-sectional shape of the vibration transmission part 1223. The membrane structure 1260 is connected to the inner wall of the vibration transmission part 1223 through its periphery. The middle part of the membrane structure 1260 can include a hole (not shown in FIG. 12). The membrane structure 1260 can partially cover the upper surface or lower surface of multiple acoustic-electric conversion components 1220 on the same horizontal plane at the same time, and the vacuum cavity 1250 can be divided into two upper and lower connected vacuum cavities by the membrane structure 1260.

在一些實施例中,膜結構1260的材料可以包括但不限於半導體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、碳化矽等。在一些實施例中,金屬材料可以包括但不限於銅、鋁、鉻、鈦、金等。在一些實施例中,金屬合金可以包括但不限於銅鋁合金、銅金合金、鈦合金、鋁合金等。在一些實施例中, 有機材料可以包括但不限於聚醯亞胺、聚對二甲苯、聚二甲基矽氧烷、矽凝膠、矽膠等。 In some embodiments, the material of the film structure 1260 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, semiconductor materials may include but are not limited to silicon, silicon dioxide, silicon nitride, silicon carbide, etc. In some embodiments, metal materials may include but are not limited to copper, aluminum, chromium, titanium, gold, etc. In some embodiments, metal alloys may include but are not limited to copper-aluminum alloys, copper-gold alloys, titanium alloys, aluminum alloys, etc. In some embodiments, Organic materials may include but are not limited to polyimide, polyparaxylene, polydimethylsiloxane, silicone gel, silicone, etc.

圖13係根據本申請案的一些實施例所示的傳聲器的結構示意圖。圖13所示的傳聲器1300可以與圖10所示的傳聲器1000相同或相似。例如,傳聲器1300的第一聲學腔體1330、第二聲學腔體1340、真空腔體1350可以分別與傳聲器1000的第一聲學腔體1030、第二聲學腔體1040、真空腔體1050相同或相似。又例如,傳聲器1300的振動拾取部1322(例如,第一振動拾取部13221(例如,第一彈性部132211、第一固定部132212)、第二振動拾取部13222(例如,第二彈性部132221、第二固定部132222))可以與傳聲器1000的振動拾取部1022(例如,第一振動拾取部10221(例如,第一彈性部102211、第一固定部102212)、第二振動拾取部10222(例如,第二彈性部102221、第二固定部102222))相同或相似。關於傳聲器1300的更多結構(例如,殼體結構1310、孔部1311、振動傳遞部1323、聲電轉換組件1320等)可以參考圖10及其相關描述。 FIG13 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. The microphone 1300 shown in FIG13 may be the same as or similar to the microphone 1000 shown in FIG10. For example, the first acoustic cavity 1330, the second acoustic cavity 1340, and the vacuum cavity 1350 of the microphone 1300 may be the same as or similar to the first acoustic cavity 1030, the second acoustic cavity 1040, and the vacuum cavity 1050 of the microphone 1000, respectively. For another example, the vibration picking-up portion 1322 of the microphone 1300 (e.g., the first vibration picking-up portion 13221 (e.g., the first elastic portion 132211, the first fixed portion 132212), the second vibration picking-up portion 13222 (e.g., the second elastic portion 132221, the second fixed portion 132222)) may be the same as or similar to the vibration picking-up portion 10222 of the microphone 1000 (e.g., the first vibration picking-up portion 10221 (e.g., the first elastic portion 102211, the first fixed portion 102212), the second vibration picking-up portion 10222 (e.g., the second elastic portion 102221, the second fixed portion 102222)). For more information about the structure of the microphone 1300 (e.g., the housing structure 1310, the hole 1311, the vibration transmission part 1323, the acoustic-electric conversion component 1320, etc.), please refer to FIG. 10 and its related description.

在一些實施例中,圖13中所示的傳聲器1300與圖10所示的傳聲器1200的主要區別之處在於,傳聲器1300還可以包括一個或多個膜結構1360。在一些實施例中,膜結構1360可以位於聲電轉換組件1320的具有較小剛度的懸臂樑結構(例如,第二懸臂樑結構13212)的上表面及/或下表面。例如,膜結構1360可以是單層膜結構,膜結構1360可以位於第二懸臂樑結構13212的上表面或下表面。又例如,膜結構1360可以為雙層膜,膜結構1360可以包括第一膜結構和第二膜結構,第一膜結構位於第二懸臂樑結構13212的上表面,第二膜結構位於第二懸臂樑結構13212的下表面。在一些實施例中,膜結構1360可以全部或局部覆蓋第二懸臂樑結構13212的上表面及/或下表面。例如,每個第二懸臂樑結構13212的上表面或下表面覆蓋有相對應的膜結構1360,膜結構1360可以全部覆蓋對應的第二懸臂樑結構13212的上表面或下表面,或膜結構1360可以局部覆蓋對應的 第二懸臂樑結構13212的上表面或下表面。關於膜結構1360全部或局部覆蓋第二懸臂樑結構13212的上表面和下表面的更多內容可以參考圖12及其相關描述。 In some embodiments, the microphone 1300 shown in FIG. 13 is mainly different from the microphone 1200 shown in FIG. 10 in that the microphone 1300 may further include one or more membrane structures 1360. In some embodiments, the membrane structure 1360 may be located on the upper surface and/or lower surface of the cantilever beam structure (e.g., the second cantilever beam structure 13212) with a relatively small rigidity of the acoustic-electric conversion component 1320. For example, the membrane structure 1360 may be a single-layer membrane structure, and the membrane structure 1360 may be located on the upper surface or the lower surface of the second cantilever beam structure 13212. For another example, the membrane structure 1360 may be a double-layer membrane, and the membrane structure 1360 may include a first membrane structure and a second membrane structure, wherein the first membrane structure is located on the upper surface of the second cantilever beam structure 13212, and the second membrane structure is located on the lower surface of the second cantilever beam structure 13212. In some embodiments, the membrane structure 1360 may cover the upper surface and/or the lower surface of the second cantilever beam structure 13212 in whole or in part. For example, the upper surface or lower surface of each second cantilever beam structure 13212 is covered with a corresponding membrane structure 1360, and the membrane structure 1360 may completely cover the upper surface or lower surface of the corresponding second cantilever beam structure 13212, or the membrane structure 1360 may partially cover the upper surface or lower surface of the corresponding second cantilever beam structure 13212. For more information about the membrane structure 1360 completely or partially covering the upper surface and lower surface of the second cantilever beam structure 13212, please refer to Figure 12 and its related description.

在一些實施例中,膜結構1360也可以位於聲電轉換組件1320的具有較大剛度的懸臂樑結構(例如,第一懸臂樑結構13211)的上表面及/或下表面。膜結構1360位於第一懸臂樑結構13211的上表面及/或下表面的方式與膜結構1360位於第二懸臂樑結構13212的上表面及/或下表面的方式類似,在此不做贅述。 In some embodiments, the membrane structure 1360 may also be located on the upper surface and/or lower surface of the cantilever beam structure (e.g., the first cantilever beam structure 13211) of the acoustic-electric conversion assembly 1320 with greater rigidity. The manner in which the membrane structure 1360 is located on the upper surface and/or lower surface of the first cantilever beam structure 13211 is similar to the manner in which the membrane structure 1360 is located on the upper surface and/or lower surface of the second cantilever beam structure 13212, and will not be elaborated here.

在一些實施例中,膜結構1360還可以同時位於聲電轉換組件1320的具有較小剛度的懸臂樑結構(例如,第二懸臂樑結構13212)的上表面及/或下表面和具有較大剛度的懸臂樑結構(例如,第一懸臂樑結構13211)的上表面及/或下表面。例如,圖14係根據本申請案的一些實施例所示的傳聲器的結構示意圖,如圖14所示,膜結構1360同時位於第一懸臂樑結構13211的上表面和第二懸臂樑結構13212的下表面。在一些實施例中,在具有較大剛度的懸臂樑結構(例如,第一懸臂樑結構13211)的上表面及/或下表面設置膜結構1360,可以使得具有較大剛度的懸臂樑結構相對於振動傳遞部1323不發生形變,提高傳聲器1300的靈敏度。 In some embodiments, the membrane structure 1360 may also be located simultaneously on the upper surface and/or lower surface of the cantilever beam structure with smaller rigidity (e.g., the second cantilever beam structure 13212) and the upper surface and/or lower surface of the cantilever beam structure with larger rigidity (e.g., the first cantilever beam structure 13211) of the acoustic-electric conversion assembly 1320. For example, FIG14 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG14, the membrane structure 1360 is located simultaneously on the upper surface of the first cantilever beam structure 13211 and the lower surface of the second cantilever beam structure 13212. In some embodiments, a membrane structure 1360 is provided on the upper surface and/or lower surface of a cantilever beam structure with greater rigidity (e.g., the first cantilever beam structure 13211), so that the cantilever beam structure with greater rigidity does not deform relative to the vibration transmission part 1323, thereby improving the sensitivity of the microphone 1300.

需要說明的是,圖10所示的傳聲器1000、圖12所示的傳聲器1200和圖13和圖14所示的傳聲器1300中各自對應的振動拾取部不限於通過設置不同剛度的固定部和彈性部以保證真空腔體的穩定性,在一些實施例中,還可以通過在真空腔體對應的振動拾取部處設置加固件來保證真空腔體的穩定性,關於固定件的描述可以參考圖7中及其相關內容,在此不做贅述。 It should be noted that the corresponding vibration pickup parts in the microphone 1000 shown in FIG. 10 , the microphone 1200 shown in FIG. 12 , and the microphone 1300 shown in FIG. 13 and FIG. 14 are not limited to ensuring the stability of the vacuum cavity by setting the fixed part and the elastic part with different rigidity. In some embodiments, the stability of the vacuum cavity can also be ensured by setting a reinforcement at the vibration pickup part corresponding to the vacuum cavity. The description of the fixing part can refer to FIG. 7 and its related contents, which will not be elaborated here.

圖15係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖15所示,傳聲器1500可以包括殼體結構1510、聲電轉換組件1520、振動拾取部1522和振動傳遞部1523。圖15中所示的傳聲器1500可以與圖5中所示的傳聲器 500相同或相似。例如,傳聲器1500的第一聲學腔體1530、第二聲學腔體1540、真空腔體1550可以分別與傳聲器500的第一聲學腔體530、第二聲學腔體540、真空腔體550相同或相似。關於傳聲器1500的更多結構(例如,殼體結構1510、孔部1511、振動傳遞部1523、聲電轉換組件1520等)可以參考圖5及其相關描述。 FIG15 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG15 , the microphone 1500 may include a housing structure 1510, an acoustic-electric conversion assembly 1520, a vibration pickup portion 1522, and a vibration transmission portion 1523. The microphone 1500 shown in FIG15 may be the same as or similar to the microphone 500 shown in FIG5 . For example, the first acoustic cavity 1530, the second acoustic cavity 1540, and the vacuum cavity 1550 of the microphone 1500 may be the same as or similar to the first acoustic cavity 530, the second acoustic cavity 540, and the vacuum cavity 550 of the microphone 500, respectively. For more information about the structure of the microphone 1500 (e.g., the housing structure 1510, the hole 1511, the vibration transmission part 1523, the acoustic-electric conversion component 1520, etc.), please refer to FIG. 5 and its related description.

在一些實施例中,圖15中所示的傳聲器1500與圖5所示的傳聲器500的主要區別之處在於振動拾取部1522。在一些實施例中,振動拾取部1522可以包括第一振動拾取部15221、第二振動拾取部15222和第三振動拾取部15223。在一些實施例中,第一振動拾取部15221和第二振動拾取部15222關於振動傳遞部1523呈上下相對設置,使得振動傳遞部1523位於第一振動拾取部15221和第二振動拾取部15222之間。具體地,第一振動拾取部15221的下表面與振動傳遞部1523的上表面連接,第二振動拾取部15222的上表面與振動傳遞部1523的下表面連接。在一些實施例中,第一振動拾取部15221、第二振動拾取部15222和振動傳遞部1523之間可以形成真空腔體1550,聲電轉換組件1520位於真空腔體1550中。在一些實施例中,第三振動拾取部15223連接於振動傳遞部1523和殼體結構1510的內壁之間。當傳聲器1500工作時,聲音信號可以通過孔部1511進入到第一聲學腔體1530並作用於振動拾取部1522,使得第三振動拾取部15223發生振動,第三振動拾取部15223將振動通過振動傳遞部1523傳遞至聲電轉換組件1520。 In some embodiments, the microphone 1500 shown in FIG. 15 is mainly different from the microphone 500 shown in FIG. 5 in the vibration pickup portion 1522. In some embodiments, the vibration pickup portion 1522 may include a first vibration pickup portion 15221, a second vibration pickup portion 15222, and a third vibration pickup portion 15223. In some embodiments, the first vibration pickup portion 15221 and the second vibration pickup portion 15222 are disposed opposite to each other up and down with respect to the vibration transmission portion 1523, so that the vibration transmission portion 1523 is located between the first vibration pickup portion 15221 and the second vibration pickup portion 15222. Specifically, the lower surface of the first vibration pickup part 15221 is connected to the upper surface of the vibration transmission part 1523, and the upper surface of the second vibration pickup part 15222 is connected to the lower surface of the vibration transmission part 1523. In some embodiments, a vacuum cavity 1550 can be formed between the first vibration pickup part 15221, the second vibration pickup part 15222 and the vibration transmission part 1523, and the acoustic-electric conversion assembly 1520 is located in the vacuum cavity 1550. In some embodiments, the third vibration pickup part 15223 is connected between the vibration transmission part 1523 and the inner wall of the housing structure 1510. When the microphone 1500 is working, the sound signal can enter the first acoustic cavity 1530 through the hole 1511 and act on the vibration pickup part 1522, causing the third vibration pickup part 15223 to vibrate, and the third vibration pickup part 15223 transmits the vibration to the acoustic-electric conversion component 1520 through the vibration transmission part 1523.

在一些實施例中,第三振動拾取部15223可以包括一個或多個薄膜結構,該薄膜結構與振動傳遞部1523和殼體結構1510相適配。例如,殼體結構1510和振動傳遞部1523均為圓柱狀結構時,第三振動拾取部15223可以是一個環形薄膜結構,環形薄膜結構周側的外壁與殼體結構1510連接,環形薄膜結構周側的內壁與振動傳遞部1523連接。又例如,殼體結構1510為圓柱狀結構,振動傳遞部1523為長方體結構時,第三振動拾取部15223可以是一個中心部位具有長方形孔部的圓形薄膜結構,該薄膜結構周側的外壁與殼體結構1510連接,薄膜結構的 內壁與振動傳遞部1523連接。需要注意的是,第三振動拾取部15223的形狀不限於前述的環形和長方形,還可以是其他形狀的薄膜結構,例如,五邊形、六邊形等規則及/或不規則形狀,第三振動拾取部15223的形狀和結構可以根據殼體結構1510和振動傳遞部1523的形狀進行適應性調整。 In some embodiments, the third vibration pickup portion 15223 may include one or more film structures, which are compatible with the vibration transmission portion 1523 and the housing structure 1510. For example, when the housing structure 1510 and the vibration transmission portion 1523 are both cylindrical structures, the third vibration pickup portion 15223 may be an annular film structure, the outer wall of the annular film structure is connected to the housing structure 1510, and the inner wall of the annular film structure is connected to the vibration transmission portion 1523. For another example, when the shell structure 1510 is a cylindrical structure and the vibration transmission part 1523 is a rectangular parallelepiped structure, the third vibration pickup part 15223 can be a circular film structure with a rectangular hole in the center, and the outer wall of the film structure is connected to the shell structure 1510, and the inner wall of the film structure is connected to the vibration transmission part 1523. It should be noted that the shape of the third vibration pickup part 15223 is not limited to the aforementioned ring and rectangle, and can also be a film structure of other shapes, for example, regular and/or irregular shapes such as pentagons and hexagons. The shape and structure of the third vibration pickup part 15223 can be adaptively adjusted according to the shapes of the shell structure 1510 and the vibration transmission part 1523.

在一些實施例中,第三振動拾取部15223的材料可以包括但不限於半導體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、碳化矽等。在一些實施例中,金屬材料可以包括但不限於銅、鋁、鉻、鈦、金等。在一些實施例中,金屬合金可以包括但不限於銅鋁合金、銅金合金、鈦合金、鋁合金等。在一些實施例中,有機材料可以包括但不限於聚醯亞胺、聚對二甲苯、聚二甲基矽氧烷、矽凝膠、矽膠等。 In some embodiments, the material of the third vibration pickup portion 15223 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, semiconductor materials may include but are not limited to silicon, silicon dioxide, silicon nitride, silicon carbide, etc. In some embodiments, metal materials may include but are not limited to copper, aluminum, chromium, titanium, gold, etc. In some embodiments, metal alloys may include but are not limited to copper-aluminum alloys, copper-gold alloys, titanium alloys, aluminum alloys, etc. In some embodiments, organic materials may include but are not limited to polyimide, polyparaxylene, polydimethylsiloxane, silicone gel, silicone, etc.

在一些實施例中,第一振動拾取部15221和第二振動拾取部15222的材料與第三振動拾取部15223的材料不同。例如,在一些實施例中,第一振動拾取部15221的剛度和第二振動拾取部15222的剛度可以大於第三振動拾取部15223的剛度。在一些實施例中,第三振動拾取部15223可以回應於外部聲音信號產生振動,並將振動信號傳遞至聲電轉換組件1520。第一振動拾取部15221和第二振動拾取部15222具有較大的剛度,以保證第一振動拾取部15221、第二振動拾取部15222和振動傳遞部1523形成的真空腔體1550可以不受外部氣壓的影響。在一些實施例中,為保證真空腔體1550不受外部氣壓的影響,第一振動拾取部15221和第二振動拾取部15222的楊氏模量可以大於60GPa。在一些實施例中,第一振動拾取部15221和第二振動拾取部15222的楊氏模量可以大於50GPa。在一些實施例中,第一振動拾取部15221和第二振動拾取部15222的楊氏模量可以大於40GPa。 In some embodiments, the material of the first vibration pickup portion 15221 and the second vibration pickup portion 15222 is different from the material of the third vibration pickup portion 15223. For example, in some embodiments, the rigidity of the first vibration pickup portion 15221 and the rigidity of the second vibration pickup portion 15222 may be greater than the rigidity of the third vibration pickup portion 15223. In some embodiments, the third vibration pickup portion 15223 may generate vibrations in response to an external sound signal and transmit the vibration signal to the acoustic-to-electric conversion assembly 1520. The first vibration pickup part 15221 and the second vibration pickup part 15222 have a relatively large rigidity to ensure that the vacuum cavity 1550 formed by the first vibration pickup part 15221, the second vibration pickup part 15222 and the vibration transmission part 1523 is not affected by the external air pressure. In some embodiments, in order to ensure that the vacuum cavity 1550 is not affected by the external air pressure, the Young's modulus of the first vibration pickup part 15221 and the second vibration pickup part 15222 may be greater than 60GPa. In some embodiments, the Young's modulus of the first vibration pickup part 15221 and the second vibration pickup part 15222 may be greater than 50GPa. In some embodiments, the Young's modulus of the first vibration pickup portion 15221 and the second vibration pickup portion 15222 may be greater than 40 GPa.

在一些實施例中,為保證真空腔體1550可以不受外部氣壓的影 響,傳聲器1500還可以包括加固件(圖中未示出),加固件可以位於真空腔體1550對應的振動拾取部1522(例如,第一振動拾取部15221、第二振動拾取部15222)的上表面或下表面。具體地,加固件可以分別位於第一振動拾取部15221的下表面、第二振動拾取部15222的上表面,加固件的周側與振動傳遞部1523的內壁連接。關於加固件的結構、位置、材料等的具體內容可以參考圖7及其相關描述。另外,加固件也可以用於本說明書的其他實施例中,例如,圖16所示的傳聲器1600、圖17所示的傳聲器1700、圖20所示的傳聲器2000、圖21所示的傳聲器2100、圖22所示的傳聲器2200。 In some embodiments, in order to ensure that the vacuum cavity 1550 is not affected by the external air pressure, the microphone 1500 may further include a reinforcement member (not shown in the figure), which may be located on the upper surface or lower surface of the vibration pickup portion 1522 (e.g., the first vibration pickup portion 15221, the second vibration pickup portion 15222) corresponding to the vacuum cavity 1550. Specifically, the reinforcement member may be located on the lower surface of the first vibration pickup portion 15221 and the upper surface of the second vibration pickup portion 15222, respectively, and the periphery of the reinforcement member is connected to the inner wall of the vibration transmission portion 1523. For the specific contents of the structure, position, material, etc. of the reinforcement member, please refer to FIG. 7 and its related description. In addition, the reinforcement can also be used in other embodiments of the present specification, for example, the microphone 1600 shown in FIG. 16, the microphone 1700 shown in FIG. 17, the microphone 2000 shown in FIG. 20, the microphone 2100 shown in FIG. 21, and the microphone 2200 shown in FIG. 22.

在一些實施例中,傳聲器1500還可以包括一個或多個膜結構(圖中未示出),膜結構可以位於聲電轉換組件1520的上表面及/或下表面。關於膜結構的詳細內容可以參考圖12及其相關描述,在此不做贅述。 In some embodiments, the microphone 1500 may also include one or more membrane structures (not shown in the figure), and the membrane structure may be located on the upper surface and/or lower surface of the acoustic-electric conversion component 1520. For details about the membrane structure, please refer to Figure 12 and its related description, which will not be elaborated here.

圖16係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖16所示,傳聲器1600可以包括殼體結構1610、聲電轉換組件1620、振動拾取部1622和振動傳遞部1623。圖16中所示的傳聲器1600可以與圖10中所示的傳聲器1000相同或相似。例如,傳聲器1600的第一聲學腔體1630、第二聲學腔體1640、真空腔體1650可以分別與傳聲器1000的第一聲學腔體1030、第二聲學腔體1040、真空腔體1050相同或相似。關於傳聲器1600的更多結構(例如,殼體結構1610、孔部1611、振動傳遞部1623、聲電轉換組件1620等)可以參考圖10及其相關描述。 FIG16 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG16 , the microphone 1600 may include a housing structure 1610, an acoustic-electric conversion assembly 1620, a vibration pickup portion 1622, and a vibration transmission portion 1623. The microphone 1600 shown in FIG16 may be the same as or similar to the microphone 1000 shown in FIG10 . For example, the first acoustic cavity 1630, the second acoustic cavity 1640, and the vacuum cavity 1650 of the microphone 1600 may be the same as or similar to the first acoustic cavity 1030, the second acoustic cavity 1040, and the vacuum cavity 1050 of the microphone 1000, respectively. For more information about the structure of the microphone 1600 (e.g., the housing structure 1610, the hole 1611, the vibration transmission part 1623, the acoustic-electric conversion component 1620, etc.), please refer to FIG. 10 and its related description.

在一些實施例中,圖16中所示的傳聲器1600與圖10所示的傳聲器1000的主要區別之處在於振動拾取部1622。在一些實施例中,振動拾取部1622可以包括第一振動拾取部16221、第二振動拾取部16222和第三振動拾取部16223。在一些實施例中,第一振動拾取部16221和第二振動拾取部16222可以關於振動傳遞部1623呈上下相對設置,使得振動傳遞部1623位於第一振動拾取部16221和第二振動拾取部16222之間。具體地,第一振動拾取部16221的下表面與振動傳遞 部1623的上表面連接,第二振動拾取部16222的上表面與振動傳遞部1623的下表面連接。在一些實施例中,第一振動拾取部16221、第二振動拾取部16222和振動傳遞部1623之間可以形成真空腔體1650,聲電轉換組件1620(例如,第一懸臂樑結構16211、第二懸臂樑結構16212)位於真空腔體1650中。 In some embodiments, the microphone 1600 shown in FIG. 16 is mainly different from the microphone 1000 shown in FIG. 10 in the vibration pickup portion 1622. In some embodiments, the vibration pickup portion 1622 may include a first vibration pickup portion 16221, a second vibration pickup portion 16222, and a third vibration pickup portion 16223. In some embodiments, the first vibration pickup portion 16221 and the second vibration pickup portion 16222 may be disposed in an upper and lower relative manner with respect to the vibration transmission portion 1623, so that the vibration transmission portion 1623 is located between the first vibration pickup portion 16221 and the second vibration pickup portion 16222. Specifically, the lower surface of the first vibration pickup part 16221 is connected to the upper surface of the vibration transmission part 1623, and the upper surface of the second vibration pickup part 16222 is connected to the lower surface of the vibration transmission part 1623. In some embodiments, a vacuum cavity 1650 can be formed between the first vibration pickup part 16221, the second vibration pickup part 16222 and the vibration transmission part 1623, and the acoustic-electric conversion component 1620 (for example, the first cantilever beam structure 16211, the second cantilever beam structure 16212) is located in the vacuum cavity 1650.

在一些實施例中,第三振動拾取部16223連接於振動傳遞部1623和殼體結構1610的內壁之間。當傳聲器1600工作時,聲音信號可以通過孔部1611進入到第一聲學腔體1630並作用於第三振動拾取部16223發生振動,第三振動拾取部16223將振動通過振動傳遞部1623傳遞至聲電轉換組件1620。關於第三振動拾取部16223的詳細內容可以參考圖15及其相關描述,在此不做贅述。 In some embodiments, the third vibration pickup part 16223 is connected between the vibration transmission part 1623 and the inner wall of the housing structure 1610. When the microphone 1600 is working, the sound signal can enter the first acoustic cavity 1630 through the hole 1611 and act on the third vibration pickup part 16223 to vibrate, and the third vibration pickup part 16223 transmits the vibration to the acoustic-electric conversion component 1620 through the vibration transmission part 1623. The details of the third vibration pickup part 16223 can be referred to Figure 15 and its related description, which will not be elaborated here.

在一些實施例中,傳聲器1600還可以包括一個或多個膜結構(圖中未示出),膜結構可以位於聲電轉換組件1620的上表面及/或下表面。關於膜結構的詳細內容可以參考圖12-圖14及其相關描述,在此不做贅述。 In some embodiments, the microphone 1600 may further include one or more membrane structures (not shown in the figure), and the membrane structure may be located on the upper surface and/or lower surface of the acoustic-electric conversion component 1620. For details about the membrane structure, please refer to Figures 12 to 14 and related descriptions, which will not be elaborated here.

圖17係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖17所示,傳聲器1700可以包括殼體結構1710、聲電轉換組件1720、振動拾取部1722和振動傳遞部1723。圖17中所示的傳聲器1700可以與圖15中所示的傳聲器1500相同或相似。例如,傳聲器1700的第一聲學腔體1730、第二聲學腔體1740、真空腔體1750可以分別與傳聲器1500的第一聲學腔體1530、第二聲學腔體1540、腔體1550相同或相似。又例如,傳聲器1700的振動拾取部1722(例如,第一振動拾取部17221、第二振動拾取部17222、第三振動拾取部17223)可以與傳聲器1500的振動拾取部1522(例如,第一振動拾取部15221、第二振動拾取部15222、第三振動拾取部15223)相同或相似。關於傳聲器1700的更多結構(例如,殼體結構1710、孔部1711、振動傳遞部1723、聲電轉換組件1720等)可以參考圖15及其相關描述。 FIG17 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG17 , the microphone 1700 may include a housing structure 1710, an acoustic-electric conversion assembly 1720, a vibration pickup portion 1722, and a vibration transmission portion 1723. The microphone 1700 shown in FIG17 may be the same as or similar to the microphone 1500 shown in FIG15 . For example, the first acoustic cavity 1730, the second acoustic cavity 1740, and the vacuum cavity 1750 of the microphone 1700 may be the same as or similar to the first acoustic cavity 1530, the second acoustic cavity 1540, and the cavity 1550 of the microphone 1500, respectively. For another example, the vibration pickup part 1722 (e.g., the first vibration pickup part 17221, the second vibration pickup part 17222, and the third vibration pickup part 17223) of the microphone 1700 may be the same as or similar to the vibration pickup part 1522 (e.g., the first vibration pickup part 15221, the second vibration pickup part 15222, and the third vibration pickup part 15223) of the microphone 1500. For more structures of the microphone 1700 (e.g., the housing structure 1710, the hole part 1711, the vibration transmission part 1723, the acoustic-electric conversion component 1720, etc.), please refer to FIG. 15 and its related description.

在一些實施例中,圖17所示的傳聲器1700與圖15所示的傳聲器 1500的主要區別之處在於,傳聲器1700還可以包括一個或多個支撐結構1760。在一些實施例中,支撐結構1760可以設置於真空腔體1750中,支撐結構1760的上表面可以與第一振動拾取部17221的下表面連接,支撐結構1760的下表面可以與第二振動拾取部17222的上表面連接。一方面,通過在真空腔體1750中設置支撐結構1760,支撐結構1760分別與第一振動拾取部17221和第二振動拾取部17222連接,進一步提高第一振動拾取部17221和第二振動拾取部17222的剛度,可以使得第一振動拾取部17221和第二振動拾取部17222不受第一聲學腔體1730內空氣振動的影響而產生形變,進而減少傳聲器1700內部器件(如,第一振動拾取部17221、第二振動拾取部17222)的振動模態。同時,支撐結構1760提高第一振動拾取部17221和第二振動拾取部17222的剛度,也可以進一步保證真空腔體1750的體積基本保持恒定,從而使得真空腔體1750內部的真空度在所需範圍內(例如,小於100Pa),進而降低真空腔體1750內的空氣阻尼對聲電轉換組件1720的影響,提高傳聲器1700的Q值。另一方面,支撐結構1760分別與第一振動拾取部17221和第二振動拾取部17222連接,也可以提高傳聲器1700在超載情況下的可靠性。 In some embodiments, the microphone 1700 shown in FIG. 17 is mainly different from the microphone 1500 shown in FIG. 15 in that the microphone 1700 may further include one or more supporting structures 1760. In some embodiments, the supporting structure 1760 may be disposed in the vacuum chamber 1750, the upper surface of the supporting structure 1760 may be connected to the lower surface of the first vibration pickup portion 17221, and the lower surface of the supporting structure 1760 may be connected to the upper surface of the second vibration pickup portion 17222. On the one hand, by arranging a supporting structure 1760 in the vacuum cavity 1750, the supporting structure 1760 is respectively connected to the first vibration pickup part 17221 and the second vibration pickup part 17222, thereby further improving the rigidity of the first vibration pickup part 17221 and the second vibration pickup part 17222, so that the first vibration pickup part 17221 and the second vibration pickup part 17222 are not affected by the air vibration in the first acoustic cavity 1730 and are not deformed, thereby reducing the vibration mode of the internal components of the microphone 1700 (such as the first vibration pickup part 17221 and the second vibration pickup part 17222). At the same time, the support structure 1760 improves the rigidity of the first vibration pickup part 17221 and the second vibration pickup part 17222, and can further ensure that the volume of the vacuum cavity 1750 remains basically constant, so that the vacuum degree inside the vacuum cavity 1750 is within the required range (for example, less than 100Pa), thereby reducing the influence of the air damping in the vacuum cavity 1750 on the acoustic-electric conversion component 1720 and improving the Q value of the microphone 1700. On the other hand, the support structure 1760 is connected to the first vibration pickup part 17221 and the second vibration pickup part 17222 respectively, which can also improve the reliability of the microphone 1700 under overload conditions.

在一些實施例中,支撐結構1760的形狀可以是板狀結構、圓柱體、圓台、長方體、錐台、六面體等規則及/或不規則結構。在一些實施例中,支撐結構1760的材料可以包括但不限於半導體材料、金屬材料、金屬合金、有機材料等中的一種或多種。在一些實施例中,半導體材料可以包括但不限於矽、二氧化矽、氮化矽、碳化矽等。在一些實施例中,金屬材料可以包括但不限於銅、鋁、鉻、鈦、金等。在一些實施例中,金屬合金可以包括但不限於銅鋁合金、銅金合金、鈦合金、鋁合金等。在一些實施例中,有機材料可以包括但不限於聚醯亞胺、聚對二甲苯、聚二甲基矽氧烷、矽凝膠、矽膠等。 In some embodiments, the shape of the support structure 1760 may be a regular and/or irregular structure such as a plate structure, a cylinder, a truncated cone, a cuboid, a pyramid, a hexahedron, etc. In some embodiments, the material of the support structure 1760 may include but is not limited to one or more of semiconductor materials, metal materials, metal alloys, organic materials, etc. In some embodiments, the semiconductor material may include but is not limited to silicon, silicon dioxide, silicon nitride, silicon carbide, etc. In some embodiments, the metal material may include but is not limited to copper, aluminum, chromium, titanium, gold, etc. In some embodiments, the metal alloy may include but is not limited to copper-aluminum alloy, copper-gold alloy, titanium alloy, aluminum alloy, etc. In some embodiments, the organic material may include but is not limited to polyimide, polyparaxylene, polydimethylsiloxane, silicone gel, silicone, etc.

參照圖17,在一些實施例中,聲電轉換組件1720中的自由端(即 懸空於真空腔體1750中的端部)與支撐結構1760之間的第二間距d2不小於2um,以防止聲電轉換組件1720在振動流程中與支撐結構1760發生碰撞。同時,當第二間距d2較小時(例如,第二間距d2不大於20um),可以有效減小傳聲器1700整體的體積。在一些實施例中,不同聲電轉換組件1720(例如,不同長度的懸臂樑結構)中的自由端與支撐結構1760具有的第二間距d2可以是不同的。在一些實施例中,通過設計不同形狀、尺寸的支撐結構1760以及調整支撐結構1760的位置,可以使得多個聲電轉換組件1720(例如,懸臂樑結構)緊密排布在真空腔體1750中,從而使得傳聲器1700的具有較小的整體尺寸。圖18A和圖18B係根據本申請案的一些實施例所示的傳聲器在不同方向的截面示意圖,如圖18A和圖18B所示,支撐結構1760為橢圓柱體時,支撐結構1760、振動傳遞部1723和振動拾取部1722在真空腔體1750中形成環形或類似環形的腔體,多個聲電轉換組件1720位於該腔體中,並沿支撐結構1760的周側間隔分佈。 Referring to FIG. 17 , in some embodiments, the second distance d2 between the free end of the acoustic-to-electric conversion component 1720 (i.e., the end suspended in the vacuum chamber 1750) and the support structure 1760 is not less than 2 μm, so as to prevent the acoustic-to-electric conversion component 1720 from colliding with the support structure 1760 during the vibration process. At the same time, when the second distance d2 is smaller (for example, the second distance d2 is not greater than 20 μm), the overall volume of the microphone 1700 can be effectively reduced. In some embodiments, the second distance d2 between the free end and the support structure 1760 in different acoustic-to-electric conversion components 1720 (for example, cantilever beam structures of different lengths) can be different. In some embodiments, by designing support structures 1760 of different shapes and sizes and adjusting the position of the support structures 1760, multiple acoustic-to-electrical conversion components 1720 (e.g., cantilever beam structures) can be densely arranged in the vacuum cavity 1750, thereby making the microphone 1700 have a smaller overall size. FIG. 18A and FIG. 18B are schematic cross-sectional views of microphones in different directions according to some embodiments of the present application. As shown in FIG. 18A and FIG. 18B, when the support structure 1760 is an elliptical cylinder, the support structure 1760, the vibration transmission part 1723 and the vibration pickup part 1722 form a ring-shaped or ring-like cavity in the vacuum cavity 1750, and a plurality of acoustic-electric conversion components 1720 are located in the cavity and are spaced and distributed along the periphery of the support structure 1760.

在一些實施例中,支撐結構1760可以位於真空腔體1750的中心位置。例如,圖19A係根據本申請案的一些實施例所示的傳聲器的截面示意圖,如圖19A所示,支撐結構1760位於真空腔體1750的中心位置。這裡的中心位置可以是真空腔體1750的幾何中心。在一些實施例中,支撐結構1760也可以設置在真空腔體1750中靠近振動傳遞部1723任一端的位置。例如,圖19B係根據本申請案的一些實施例所示的傳聲器的截面示意圖,如圖19B所示,支撐結構1760位於真空腔體1750中靠近振動傳遞部1723的側壁L的位置。需要說明的是,關於支撐結構1760的形狀、排布方式、位置、材料等可以根據聲電轉換組件1720的長度、數量和分佈方式等進行適應調整,在此不做進一步限定。 In some embodiments, the support structure 1760 may be located at the center of the vacuum cavity 1750. For example, FIG. 19A is a schematic cross-sectional view of a microphone according to some embodiments of the present application. As shown in FIG. 19A , the support structure 1760 is located at the center of the vacuum cavity 1750. The center here may be the geometric center of the vacuum cavity 1750. In some embodiments, the support structure 1760 may also be disposed in the vacuum cavity 1750 near either end of the vibration transmission portion 1723. For example, FIG. 19B is a schematic cross-sectional view of a microphone according to some embodiments of the present application. As shown in FIG. 19B , the support structure 1760 is located in the vacuum cavity 1750 near the side wall L of the vibration transmission portion 1723. It should be noted that the shape, arrangement, position, material, etc. of the support structure 1760 can be adjusted according to the length, quantity, and distribution of the acoustic-electric conversion component 1720, and no further limitation is made here.

在一些實施例中,傳聲器1700還可以包括一個或多個膜結構(圖中未示出),膜結構可以設置在聲電轉換組件1720的上表面及/或下表面。在一些實施例中,膜結構的中部位置可以設有供支撐結構1760穿過的孔部,該孔部可以 與支撐結構的截面形狀相同或不同。在一些實施例中,支撐結構1760的周側側壁可以與膜結構中孔部的周側部分連接,或者不與膜結構中孔部的周側部分連接。關於膜結構的形狀、材質、結構等更多描述可以參考圖12及其相關描述。 In some embodiments, the microphone 1700 may further include one or more membrane structures (not shown in the figure), and the membrane structure may be disposed on the upper surface and/or lower surface of the acoustic-electric conversion assembly 1720. In some embodiments, a hole portion for the support structure 1760 to pass through may be provided in the middle of the membrane structure, and the hole portion may be the same as or different from the cross-sectional shape of the support structure. In some embodiments, the peripheral sidewalls of the support structure 1760 may be connected to the peripheral portion of the hole portion in the membrane structure, or may not be connected to the peripheral portion of the hole portion in the membrane structure. For more descriptions of the shape, material, structure, etc. of the membrane structure, please refer to Figure 12 and its related descriptions.

需要注意的是,支撐結構還可以應用於其它實施例中的傳聲器中,例如,可以應用於圖5所示的傳聲器500、圖10所示的傳聲器1000、圖12所示的傳聲器1200、圖13所示的傳聲器1300、圖14所示的傳聲器1200中,支撐結構應用於其他傳聲器時,支撐結構的形狀、位置、材料可以根據具體情況進行適應性調整。 It should be noted that the support structure can also be applied to microphones in other embodiments, for example, it can be applied to microphone 500 shown in FIG5, microphone 1000 shown in FIG10, microphone 1200 shown in FIG12, microphone 1300 shown in FIG13, and microphone 1200 shown in FIG14. When the support structure is applied to other microphones, the shape, position, and material of the support structure can be adaptively adjusted according to the specific situation.

圖20係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖20所示,傳聲器2000可以包括殼體結構2010、聲電轉換組件2020、振動拾取部2022和振動傳遞部2023。圖20中所示的傳聲器2000可以與圖16中所示的傳聲器1600相同或相似。例如,傳聲器2000的第一聲學腔體2030、第二聲學腔體2040、真空腔體2050可以分別與傳聲器1600的第一聲學腔體1630、第二聲學腔體1640、真空腔體1650相同或相似。又例如,傳聲器2000的振動拾取部2022(例如,第一振動拾取部20221、第二振動拾取部20222、第三振動拾取部20223)可以與傳聲器1600的振動拾取部1622(例如,第一振動拾取部16221、第二振動拾取部16222、第三振動拾取部16223)相同或相似。關於傳聲器2000的更多結構(例如,殼體結構2010、孔部2011、振動傳遞部2023、聲電轉換組件2020等)可以參考圖16及其相關描述。 FIG20 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG20 , the microphone 2000 may include a housing structure 2010, an acoustic-electric conversion assembly 2020, a vibration pickup portion 2022, and a vibration transmission portion 2023. The microphone 2000 shown in FIG20 may be the same as or similar to the microphone 1600 shown in FIG16 . For example, the first acoustic cavity 2030, the second acoustic cavity 2040, and the vacuum cavity 2050 of the microphone 2000 may be the same as or similar to the first acoustic cavity 1630, the second acoustic cavity 1640, and the vacuum cavity 1650 of the microphone 1600, respectively. For another example, the vibration pickup part 2022 (e.g., the first vibration pickup part 20221, the second vibration pickup part 20222, and the third vibration pickup part 20223) of the microphone 2000 may be the same as or similar to the vibration pickup part 1622 (e.g., the first vibration pickup part 16221, the second vibration pickup part 16222, and the third vibration pickup part 16223) of the microphone 1600. For more structures of the microphone 2000 (e.g., the housing structure 2010, the hole part 2011, the vibration transmission part 2023, the acoustic-electric conversion component 2020, etc.), please refer to FIG. 16 and its related description.

在一些實施例中,圖20中所示的傳聲器2000與圖16所示的傳聲器1600的主要區別之處在於,傳聲器2000還可以包括支撐結構2060。在一些實施例中,支撐結構2060的上表面可以與第一振動拾取部20221的下表面連接,支撐結構2060的下表面可以與第二振動拾取部20222的上表面連接。在一些實施例中,聲電轉換組件2020(例如,第一懸臂樑結構20211、第二懸臂樑結構20212)的自 由端(即,懸空於真空腔體2050中的端部)可以與支撐結構2060具有第二間距d2。關於支撐結構2060的更多描述可以參考圖17及其相關描述。 In some embodiments, the microphone 2000 shown in FIG. 20 is mainly different from the microphone 1600 shown in FIG. 16 in that the microphone 2000 may further include a support structure 2060. In some embodiments, the upper surface of the support structure 2060 may be connected to the lower surface of the first vibration pickup portion 20221, and the lower surface of the support structure 2060 may be connected to the upper surface of the second vibration pickup portion 20222. In some embodiments, the free end (i.e., the end suspended in the vacuum chamber 2050) of the acoustic-to-electric conversion assembly 2020 (e.g., the first cantilever beam structure 20211, the second cantilever beam structure 20212) may have a second distance d2 with the support structure 2060. For more description about the support structure 2060, please refer to Figure 17 and its related description.

在一些實施例中,傳聲器2000還可以包括一個或多個膜結構(圖中未示出),包括支撐結構2060的傳聲器2000的膜結構的詳細描述可以參考圖13、圖14、圖17及其相關描述。 In some embodiments, the microphone 2000 may further include one or more membrane structures (not shown in the figure), and a detailed description of the membrane structure of the microphone 2000 including the support structure 2060 may refer to FIG. 13, FIG. 14, FIG. 17 and related descriptions thereof.

圖21係根據本申請案的一些實施例所示的傳聲器的結構示意圖。在一些實施例中,傳聲器可以為骨傳導傳聲器,如圖21所示,骨傳導傳聲器2100可以包括殼體結構2110、聲電轉換組件2120、振動拾取部2122和振動傳遞部2123。圖21所示的骨傳導傳聲器2100的部件可以與圖17所示的傳聲器1700的部件相同或相似,例如,聲電轉換組件2120、第一聲學腔體2130、第二聲學腔體2140、真空腔體2150、振動拾取部2122(例如,第一振動拾取部21221、第二振動拾取部21222)、振動傳遞部2123、支撐結構2160等。 FIG21 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. In some embodiments, the microphone may be a bone conduction microphone. As shown in FIG21 , the bone conduction microphone 2100 may include a housing structure 2110, an acoustic-to-electric conversion assembly 2120, a vibration pickup portion 2122, and a vibration transmission portion 2123. The components of the bone conduction microphone 2100 shown in FIG21 may be the same or similar to the components of the microphone 1700 shown in FIG17 , for example, the acoustic-to-electric conversion assembly 2120, the first acoustic cavity 2130, the second acoustic cavity 2140, the vacuum cavity 2150, the vibration pickup portion 2122 (for example, the first vibration pickup portion 21221, the second vibration pickup portion 21222), the vibration transmission portion 2123, the support structure 2160, etc.

在一些實施例中,骨傳導傳聲器2100與圖17所示的傳聲器1700的區別之處在於振動拾取方式不同,傳聲器1700的振動拾取部1722(例如,第三振動拾取部17223)拾取通過孔部1711傳遞至第一聲學腔體1730內的空氣的振動信號,而骨傳導傳聲器2100的殼體結構2110不包括孔部,骨傳導傳聲器2100則是通過振動拾取部2122(例如,第三振動拾取部21223)回應於殼體結構2110的振動而產生振動信號。具體地,殼體結構2110可以基於外部聲音信號產生振動,第三振動拾取部21223可以回應於殼體結構2110的振動而產生振動信號,並將振動信號通過振動傳遞部2123傳遞至聲電轉換組件2120,聲電轉換組件2120將振動信號轉換為電信號並進行輸出。 In some embodiments, the difference between the bone conduction microphone 2100 and the microphone 1700 shown in FIG. 17 is that the vibration pickup method is different. The vibration pickup portion 1722 (e.g., the third vibration pickup portion 17223) of the microphone 1700 picks up the vibration signal of the air transmitted through the hole 1711 to the first acoustic cavity 1730, while the shell structure 2110 of the bone conduction microphone 2100 does not include a hole. The bone conduction microphone 2100 generates a vibration signal by responding to the vibration of the shell structure 2110 through the vibration pickup portion 2122 (e.g., the third vibration pickup portion 21223). Specifically, the housing structure 2110 can generate vibrations based on external sound signals, and the third vibration pickup portion 21223 can generate a vibration signal in response to the vibration of the housing structure 2110, and transmit the vibration signal to the acoustic-electric conversion component 2120 through the vibration transmission portion 2123, and the acoustic-electric conversion component 2120 converts the vibration signal into an electrical signal and outputs it.

圖22係根據本申請案的一些實施例所示的傳聲器的結構示意圖。如圖22所示,骨傳導傳聲器2200可以包括殼體結構2210、聲電轉換組件2220、振動拾取部2222和振動傳遞部2223。圖22所示的骨傳導傳聲器2200的部件可以與 圖20所示的傳聲器2000的部件相同或相似,例如,聲電轉換組件2220、第一聲學腔體2230、第二聲學腔體2240、真空腔體2250、振動拾取部2222(例如,第一振動拾取部22221、第二振動拾取部22222)、振動傳遞部2223、支撐結構2260等。 FIG22 is a schematic diagram of the structure of a microphone according to some embodiments of the present application. As shown in FIG22 , a bone conduction microphone 2200 may include a housing structure 2210, an acoustic-to-electric conversion assembly 2220, a vibration pickup portion 2222, and a vibration transmission portion 2223. The components of the bone conduction microphone 2200 shown in FIG22 may be the same as or similar to the components of the microphone 2000 shown in FIG20 , for example, an acoustic-to-electric conversion assembly 2220, a first acoustic cavity 2230, a second acoustic cavity 2240, a vacuum cavity 2250, a vibration pickup portion 2222 (for example, a first vibration pickup portion 22221, a second vibration pickup portion 22222), a vibration transmission portion 2223, a support structure 2260, etc.

在一些實施例中,骨傳導傳聲器2200與圖20所示的傳聲器2000的區別之處在於振動拾取方式不同,傳聲器2000的振動拾取部2022(例如,第三振動拾取部20223)拾取通過孔部2011傳遞至第一聲學腔體2030內的空氣的振動信號,而骨傳導傳聲器2200的殼體結構2210不包括孔部,骨傳導傳聲器2200則是通過振動拾取部2222(例如,第三振動拾取部22223)回應於殼體結構2210的振動而產生振動信號。在一些實施例中,殼體結構2210可以基於外部聲音信號產生振動,第三振動拾取部22223可以回應於殼體結構2210的振動而產生振動信號,並將振動信號通過振動傳遞部2223傳遞至聲電轉換組件2220(例如,第一懸臂樑結構22211、第二懸臂樑結構22212),聲電轉換組件2220將振動信號轉換為電信號並進行輸出。 In some embodiments, the difference between the bone conduction microphone 2200 and the microphone 2000 shown in FIG. 20 is that the vibration pickup method is different. The vibration pickup portion 2022 (e.g., the third vibration pickup portion 20223) of the microphone 2000 picks up the vibration signal of the air transmitted through the hole 2011 to the first acoustic cavity 2030, while the shell structure 2210 of the bone conduction microphone 2200 does not include a hole. The bone conduction microphone 2200 generates a vibration signal by responding to the vibration of the shell structure 2210 through the vibration pickup portion 2222 (e.g., the third vibration pickup portion 22223). In some embodiments, the housing structure 2210 can generate vibrations based on external sound signals, and the third vibration pickup portion 22223 can generate a vibration signal in response to the vibration of the housing structure 2210, and transmit the vibration signal to the acoustic-to-electric conversion component 2220 (for example, the first cantilever beam structure 22211, the second cantilever beam structure 22212) through the vibration transmission portion 2223, and the acoustic-to-electric conversion component 2220 converts the vibration signal into an electrical signal and outputs it.

需要注意的是,圖5所示的傳聲器500、圖10所示的傳聲器1000、圖12所示的傳聲器1200、圖13所示的傳聲器1300也可以作為骨傳導傳聲器進行使用,例如,這裡的傳聲器可以不設置孔部,殼體結構可以基於外部聲音信號產生振動,第一振動拾取部或第二振動拾取部可以回應於殼體結構的振動而產生振動信號,並將振動通過振動傳遞部傳遞至聲電轉換組件,聲電轉換組件將振動信號轉換為電信號並進行輸出。 It should be noted that the microphone 500 shown in FIG5, the microphone 1000 shown in FIG10, the microphone 1200 shown in FIG12, and the microphone 1300 shown in FIG13 can also be used as a bone conduction microphone. For example, the microphone here may not be provided with a hole, the housing structure may generate vibrations based on an external sound signal, the first vibration pickup portion or the second vibration pickup portion may generate a vibration signal in response to the vibration of the housing structure, and transmit the vibration to the acoustic-electric conversion component through the vibration transmission portion, and the acoustic-electric conversion component converts the vibration signal into an electrical signal and outputs it.

上文已對基本概念做了描述,顯然,對於本領域具有通常知識者來說,上述詳細揭露僅僅作為示例,而並不構成對本發明的限定。雖然此處並沒有明確說明,本領域具有通常知識者可能會對本發明進行各種修改、改進和修正。該類修改、改進和修正在本發明中被建議,所以該類修改、改進、修正仍屬於本發明示範實施例的精神和範圍。 The basic concepts have been described above. Obviously, for those with ordinary knowledge in the field, the above detailed disclosure is only for example and does not constitute a limitation of the present invention. Although it is not explicitly stated here, those with ordinary knowledge in the field may make various modifications, improvements and amendments to the present invention. Such modifications, improvements and amendments are suggested in the present invention, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present invention.

500:傳聲器 500: Microphone

510:殼體結構 510: Shell structure

511:孔部 511: Hole

520:聲電轉換組件 520: Sound-to-electric conversion components

522:振動拾取部 522: Vibration pickup unit

523:振動傳遞部 523: Vibration transmission unit

530:第一聲學腔體 530: First acoustic cavity

540:第二聲學腔體 540: Second acoustic cavity

550:真空腔體 550: Vacuum chamber

5221:第一振動拾取部 5221: First vibration pickup unit

5222:第二振動拾取部 5222: Second vibration pickup unit

Claims (9)

一種傳聲器,包括:殼體結構;振動拾取部,所述振動拾取部回應於所述殼體結構的振動而產生振動;振動傳遞部,被配置為傳遞所述振動拾取部產生的振動;以及聲電轉換組件,被配置為接收所述振動傳遞部傳遞的振動而產生電信號;其中,所述振動拾取部與所述振動傳遞部形成真空腔體,所述聲電轉換組件位於所述真空腔體中,其中,所述振動拾取部包括由上至下依次設置的第一振動拾取部和第二振動拾取部,所述第一振動拾取部或所述第二振動拾取部包括彈性部和固定部,所述第一振動拾取部的固定部和所述第二振動拾取部的固定部以及所述振動傳遞部形成所述真空腔體,所述彈性部連接於所述固定部和所述殼體結構的內壁之間,所述固定部的剛度大於所述彈性部的剛度,其中,所述彈性部回應於外部聲音信號而產生振動。 A microphone comprises: a housing structure; a vibration pickup portion, the vibration pickup portion generating vibration in response to the vibration of the housing structure; a vibration transmission portion configured to transmit the vibration generated by the vibration pickup portion; and an acoustic-to-electric conversion component configured to receive the vibration transmitted by the vibration transmission portion and generate an electrical signal; wherein the vibration pickup portion and the vibration transmission portion form a vacuum cavity, the acoustic-to-electric conversion component is located in the vacuum cavity, wherein the vibration pickup portion comprises a plurality of components from top to bottom. The first vibration pickup part and the second vibration pickup part are arranged in sequence, the first vibration pickup part or the second vibration pickup part includes an elastic part and a fixed part, the fixed part of the first vibration pickup part and the fixed part of the second vibration pickup part and the vibration transmission part form the vacuum cavity, the elastic part is connected between the fixed part and the inner wall of the shell structure, the rigidity of the fixed part is greater than the rigidity of the elastic part, wherein the elastic part generates vibration in response to an external sound signal. 如請求項1之傳聲器,其中,所述真空腔體內部的真空度小於100Pa。 A microphone as claimed in claim 1, wherein the vacuum degree inside the vacuum cavity is less than 100 Pa. 如請求項1之傳聲器,其中,所述真空腔體內部的真空度為10-6Pa至100Pa。 A microphone as claimed in claim 1, wherein the vacuum degree inside the vacuum cavity is 10 -6 Pa to 100 Pa. 如請求項1之傳聲器,其中,所述振動拾取部與所述殼體結構形成聲學腔體,所述聲學腔體包括第一聲學腔體;所述殼體結構包括孔部,所述孔部位於與所述第一聲學腔體對應的所述殼體結構的側壁處,所述孔部將所述第一聲學腔體與外部連通;其中,所述振動拾取部回應於通過所述孔部處傳遞的所述外部聲音信號而產生振動,所述聲電轉換組件接收所述振動拾取部的振動而產生電信號。 A microphone as claimed in claim 1, wherein the vibration pickup part and the housing structure form an acoustic cavity, the acoustic cavity includes a first acoustic cavity; the housing structure includes a hole, the hole is located at the side wall of the housing structure corresponding to the first acoustic cavity, and the hole connects the first acoustic cavity with the outside; wherein the vibration pickup part generates vibration in response to the external sound signal transmitted through the hole, and the acoustic-to-electric conversion component receives the vibration of the vibration pickup part and generates an electrical signal. 如請求項1之傳聲器,其中,所述第一振動拾取部與所述第二振動拾取部之間設有呈管狀結構的所述振動傳遞部;所述振動傳遞部、所述第一振動拾取部和所述第二振動拾取部形成所述真空腔體,所述第一振動拾取部和所述第二振動拾取部通過其周側與所述殼體結構連接;其中,所述第一振動拾取部和所述第二振動拾取部回應於所述外部聲音信號而產生振動。 A microphone as claimed in claim 1, wherein the vibration transmission part having a tubular structure is provided between the first vibration pickup part and the second vibration pickup part; the vibration transmission part, the first vibration pickup part and the second vibration pickup part form the vacuum cavity, and the first vibration pickup part and the second vibration pickup part are connected to the housing structure through their peripheries; wherein the first vibration pickup part and the second vibration pickup part generate vibration in response to the external sound signal. 如請求項1之傳聲器,其中,所述固定部的楊氏模量大於50GPa。 A microphone as claimed in claim 1, wherein the Young's modulus of the fixing portion is greater than 50 GPa. 如請求項5之傳聲器,其中,所述傳聲器還包括加固件,所述加固件位於與所述真空腔體對應的所述第一振動拾取部和所述第二振動拾取部的上表面或下表面。 A microphone as claimed in claim 5, wherein the microphone further comprises a reinforcement member, wherein the reinforcement member is located on the upper surface or the lower surface of the first vibration pickup portion and the second vibration pickup portion corresponding to the vacuum cavity. 如請求項1之傳聲器,其中,所述振動拾取部包括所述第一振動拾取部、所述第二振動拾取部和第三振動拾取部,所述第一振動拾取部和所述第二振動拾取部呈上下相對設置,所述第一振動拾取部與所述第二振動拾取部之間設有呈管狀結構的所述振動傳遞部,所述振動傳遞部、所述第一振動拾取部和所述第二振動拾取部形成所述真空腔體;所述第三振動拾取部連接於所述振動傳遞部和所述殼體結構的內壁之間;其中,所述第三振動拾取部回應於所述外部聲音信號而產生振動。 The microphone of claim 1, wherein the vibration pickup part includes the first vibration pickup part, the second vibration pickup part and the third vibration pickup part, the first vibration pickup part and the second vibration pickup part are arranged opposite to each other in an upper and lower direction, the vibration transmission part having a tubular structure is arranged between the first vibration pickup part and the second vibration pickup part, the vibration transmission part, the first vibration pickup part and the second vibration pickup part form the vacuum cavity; the third vibration pickup part is connected between the vibration transmission part and the inner wall of the housing structure; wherein the third vibration pickup part generates vibration in response to the external sound signal. 如請求項8之傳聲器,其中,所述第一振動拾取部和所述第二振動拾取部的剛度大於所述第三振動拾取部的剛度,所述第一振動拾取部和所述第二振動拾取部的楊氏模量大於50GPa。 A microphone as claimed in claim 8, wherein the rigidity of the first vibration pickup part and the second vibration pickup part is greater than the rigidity of the third vibration pickup part, and the Young's modulus of the first vibration pickup part and the second vibration pickup part is greater than 50 GPa.
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