TWI855112B - Edge trimming device - Google Patents
Edge trimming device Download PDFInfo
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- TWI855112B TWI855112B TW109123778A TW109123778A TWI855112B TW I855112 B TWI855112 B TW I855112B TW 109123778 A TW109123778 A TW 109123778A TW 109123778 A TW109123778 A TW 109123778A TW I855112 B TWI855112 B TW I855112B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/04—Protective covers for the grinding wheel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/04—Protective covers for the grinding wheel
- B24B55/045—Protective covers for the grinding wheel with cooling means incorporated
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
[課題]在邊緣修整裝置中,以保持面未附著有加工屑的工作台來保持晶圓。 [解決手段]一種邊緣修整裝置,包含:工作夾台,使外徑比晶圓的外徑更小的環狀溝連通於吸引源而以環狀溝來吸引保持晶圓下表面;切削單元,使切削刀片旋轉而環狀地切削已保持在工作夾台之晶圓外周部分;及洗淨單元,對工作台的上表面之比環狀溝更外側的區域與包含有環狀溝在內之工作台的上表面進行洗淨。將洗淨單元定位在工作台的上表面之比環狀溝更外側的區域與包含有環狀溝在內之工作夾台的上表面,並使工作夾台旋轉,而對環狀溝與上表面進行洗淨。[Topic] In an edge trimming device, a wafer is held by a worktable whose surface is free of machining chips. [Solution] An edge trimming device includes: a worktable, an annular groove having an outer diameter smaller than that of the wafer is connected to a suction source to attract and hold the lower surface of the wafer by the annular groove; a cutting unit, a cutting blade is rotated to cut the outer peripheral portion of the wafer held on the worktable in an annular shape; and a cleaning unit, a region of the upper surface of the worktable that is outside the annular groove and the upper surface of the worktable including the annular groove are cleaned. The cleaning unit is positioned on the area of the upper surface of the workbench that is outside the annular groove and the upper surface of the work clamp including the annular groove, and the work clamp is rotated to clean the annular groove and the upper surface.
Description
本發明是有關於一種對晶圓的外周部分進行修整的邊緣修整裝置。The present invention relates to an edge trimming device for trimming the outer periphery of a wafer.
若將晶圓以磨削磨石磨削來將厚度薄化,會有以下問題:晶圓的外周的倒角部成為銳利邊緣,使晶圓以該銳利邊緣為起點而破裂。於是,有用於在磨削前將晶圓的外周部分去除的邊緣修整裝置(參照例如專利文獻1或專利文獻2)。If the wafer is ground with a grinding stone to reduce the thickness, there is a problem that the chamfered portion of the wafer's periphery becomes a sharp edge, causing the wafer to break from the sharp edge. Therefore, there is an edge trimming device that removes the periphery of the wafer before grinding (see, for example,
邊緣修整裝置是使磨石接觸於被工作夾台的保持面所保持的晶圓的外周部分,且使晶圓旋轉來去除外周部分。當藉由此邊緣修整加工所排出的加工屑進入晶圓的下表面與工作夾台的保持面之間並附著於保持面上時,會使被保持面所保持之晶圓的下表面的高度無法變得一定。因此,例如,如專利文獻2所揭示的方法,在對以接著劑將晶圓貼合於基材之貼合晶圓的倒角部進行完全切除的情況下,會有位於貼合面的接著劑附著到切削刀片而變得無法進行切削加工的問題。The edge trimming device makes the grindstone contact the outer peripheral portion of the wafer held by the holding surface of the work chuck, and rotates the wafer to remove the outer peripheral portion. When the processing chips discharged by this edge trimming process enter between the lower surface of the wafer and the holding surface of the work chuck and adhere to the holding surface, the height of the lower surface of the wafer held by the holding surface cannot be constant. Therefore, for example, in the method disclosed in Patent Document 2, when the chamfered portion of the bonded wafer in which the wafer is bonded to the substrate with an adhesive is completely removed, there is a problem that the adhesive located on the bonding surface adheres to the cutting blade and the cutting process cannot be performed.
為了解決此問題,工作夾台的平坦的上表面形成有外徑比晶圓的外徑稍微小的環狀溝,並使環狀溝連通於吸引源,而以環狀溝吸引保持晶圓,並將工作夾台的上表面的大部分形成為滑行面來設成難以附著加工屑。 先前技術文獻 專利文獻To solve this problem, an annular groove with an outer diameter slightly smaller than that of the wafer is formed on the flat upper surface of the work chuck, and the annular groove is connected to a suction source, so that the wafer is attracted and held by the annular groove, and most of the upper surface of the work chuck is formed into a sliding surface to prevent processing chips from being attached. Prior art literature Patent literature
專利文獻1:日本特開2010-165802號公報 專利文獻2:日本特開2017-004989號公報Patent document 1: Japanese Patent Publication No. 2010-165802 Patent document 2: Japanese Patent Publication No. 2017-004989
發明欲解決之課題Invention Problems to be Solved
但是,有加工屑從晶圓的外周緣進入工作夾台與晶圓之間,而使加工屑附著於工作夾台的上表面的環狀溝附近之情形,並成為問題。 據此,本發明之目的在於提供一種可以藉保持面未附著有加工屑之工作夾台來保持晶圓的邊緣修整裝置。 用以解決課題之手段However, there is a problem that processing chips enter between the work chuck and the wafer from the outer periphery of the wafer, and the processing chips adhere to the vicinity of the annular groove on the upper surface of the work chuck, which becomes a problem. Accordingly, the purpose of the present invention is to provide an edge trimming device that can hold a wafer by holding a work chuck without processing chips attached to the surface. Means for solving the problem
根據本發明,可提供一種邊緣修整裝置,前述邊緣修整裝置具備: 工作夾台,具有外徑比晶圓的外徑更小的環狀溝,並使該環狀溝連通於吸引源而以該環狀溝來吸引保持晶圓的下表面;工作台旋轉機構,使該工作夾台旋轉;切削單元,使裝設有切削刀片的主軸旋轉而環狀地切削已保持在該工作夾台之晶圓的外周部分;及洗淨單元,對該工作夾台的上表面之比該環狀溝更外側的區域與包含有該環狀溝在內之該工作夾台的上表面進行洗淨,將該洗淨單元定位在該工作夾台的上表面之比該環狀溝更外側的區域與包含有該環狀溝在內之該工作夾台的上表面,並以該工作台旋轉機構使該工作夾台旋轉,而對該工作夾台的上表面之比該環狀溝更外側的區域與包含有該環狀溝在內之該工作夾台的上表面進行洗淨。According to the present invention, an edge trimming device can be provided, the edge trimming device comprising: a worktable having an annular groove with an outer diameter smaller than the outer diameter of the wafer, and the annular groove is connected to a suction source to attract and hold the lower surface of the wafer by the annular groove; a worktable rotating mechanism to rotate the worktable; a cutting unit to rotate a spindle equipped with a cutting blade to cut the outer peripheral portion of the wafer held on the worktable in an annular shape; and a cleaning unit to clean the upper surface of the worktable. The cleaning unit is positioned at the area on the upper surface of the work clamp that is outside the annular groove and the upper surface of the work clamp that includes the annular groove, and the work clamp is rotated by the work clamp rotating mechanism to clean the area on the upper surface of the work clamp that is outside the annular groove and the upper surface of the work clamp that includes the annular groove.
較佳的是,邊緣修整裝置更具備使前述切削單元在前述主軸的軸心方向上移動的水平移動機構,前述切削單元包含主軸單元與刀片蓋,前述主軸單元使裝設前述切削刀片之已連結安裝座的該主軸旋轉,且前述刀片蓋圍繞該安裝座與該切削刀片。前述洗淨單元包含裝設於該刀片蓋且朝下方向噴射高壓水的洗淨噴嘴,並以該水平移動機構將從該洗淨噴嘴噴射的高壓水的落地區域定位在前述工作夾台的上表面之比前述環狀溝更外側的區域與包含有該環狀溝在內之該工作夾台的上表面來進行洗淨。Preferably, the edge trimming device is further equipped with a horizontal moving mechanism for moving the cutting unit in the axial direction of the spindle, the cutting unit includes a spindle unit and a blade cover, the spindle unit rotates the spindle connected to the mounting seat on which the cutting blade is mounted, and the blade cover surrounds the mounting seat and the cutting blade. The cleaning unit includes a cleaning nozzle mounted on the blade cover and spraying high-pressure water downward, and the horizontal moving mechanism is used to position the landing area of the high-pressure water sprayed from the cleaning nozzle on the upper surface of the work jig that is further outside the annular groove and the upper surface of the work jig including the annular groove for cleaning.
較佳的是,前述洗淨單元包含海綿與海綿用噴嘴,前述海綿用噴嘴是將洗淨水供給至該海綿,且將該海綿定位在前述工作夾台的上表面之比前述環狀溝更外側的區域與包含有該環狀溝在內之該工作夾台的上表面,並以從該海綿用噴嘴供給洗淨水的海綿來進行洗淨。 發明效果Preferably, the cleaning unit includes a sponge and a sponge nozzle, the sponge nozzle supplies cleaning water to the sponge, and the sponge is positioned on the upper surface of the work clamping table in an area outside the annular groove and the upper surface of the work clamping table including the annular groove, and the sponge is cleaned by supplying cleaning water from the sponge nozzle. Effect of the invention
根據本發明,由於可以藉已被洗淨且上表面未附著有加工屑的工作夾台來將晶圓設成平坦並保持,因此可以將以邊緣修整加工而形成在晶圓的外周緣的凹部的深度設成一定。又,由於可以將工作夾台的環狀溝內洗淨,因此變得可防止因加工屑阻塞於環狀溝而可能產生的工作夾台的吸引力的降低。According to the present invention, since the wafer can be set flat and held by the work chuck which has been cleaned and has no processing chips attached to the upper surface, the depth of the concave portion formed on the outer periphery of the wafer by edge trimming can be set constant. In addition, since the inside of the annular groove of the work chuck can be cleaned, it is possible to prevent the reduction of the suction force of the work chuck which may be caused by the processing chips clogging the annular groove.
此外,在例如將切削單元以二個相向的方式來設置的邊緣修整裝置中,可以對各個切削單元設置洗淨噴嘴來作為洗淨單元,而使各個洗淨區域不同來改變洗淨的作用。例如,可以藉由使一個洗淨噴嘴將高壓水噴射成圓柱狀來作為對工作夾台的上表面之比環狀溝更外側的區域的集中的洗淨專用,並使另一個洗淨噴嘴將高壓水噴射成扇狀而主要作為對工作夾台的上表面與環狀溝之大範圍的洗淨專用,而更有效率地洗淨工作夾台的上表面之比環狀溝更外側的區域與包含有環狀溝在內之工作夾台的上表面。In addition, in an edge trimming device in which two cutting units are arranged facing each other, for example, a cleaning nozzle may be provided for each cutting unit as a cleaning unit, and the cleaning effect may be changed by making each cleaning area different. For example, one cleaning nozzle can be made to spray high-pressure water in a cylindrical shape for concentrated cleaning of the area on the upper surface of the work chuck that is outside the annular groove, and another cleaning nozzle can be made to spray high-pressure water in a fan shape for mainly cleaning a large area of the upper surface of the work chuck and the annular groove, thereby more efficiently cleaning the area on the upper surface of the work chuck that is outside the annular groove and the upper surface of the work chuck including the annular groove.
此外,在洗淨單元包含海綿及對海綿供給洗淨水的海綿用噴嘴的情況下,由於可以藉由將海綿定位在工作夾台的上表面之比環狀溝更外側的區域與包含有環狀溝在內之工作夾台的上表面,並以從海綿用噴嘴供給洗淨水的海綿來進行洗淨,且以已被洗淨且上表面未附著有加工屑的工作夾台來將晶圓設成平坦並保持,因此可以將以邊緣修整加工而形成於晶圓的外周緣的凹部的深度設成一定。又,由於可以將環狀溝內洗淨,因此變得可防止工作夾台的吸引力的降低。Furthermore, when the cleaning unit includes a sponge and a sponge nozzle for supplying cleaning water to the sponge, the depth of the concave portion formed on the outer periphery of the wafer by edge trimming can be set constant because the sponge is positioned at the area of the upper surface of the work chuck outside the annular groove and the upper surface of the work chuck including the annular groove, and the wafer can be flattened and held by the work chuck that has been cleaned and has no processing chips attached to the upper surface. In addition, since the inside of the annular groove can be cleaned, it is possible to prevent the suction force of the work chuck from being reduced.
用以實施發明之形態The form used to implement the invention
(第1實施形態)
本發明之圖1所示的邊緣修整裝置1(以下,設為第1實施形態的邊緣修整裝置1),是可以藉由具備有旋轉之切削刀片613的第1切削單元61或第2切削單元62來對已保持在工作夾台30的晶圓W進行邊緣修整的裝置。再者,邊緣修整裝置1並不限定於可對晶圓W進行雙重切割(二軸同時切削)之類型的裝置。(First embodiment)
The
圖1所示之晶圓W是例如以矽為母材之外形為圓形的半導體晶圓,且其正面Wa在已區劃成格子狀的各區域中各自形成有IC等之未圖示的器件。晶圓W是將外周緣進行倒角加工而將截面形成為大致圓弧狀的倒角部Wd(參照圖2)。再者,晶圓W除了矽以外,亦可用砷化鎵、藍寶石、氮化鎵、陶瓷、樹脂、或碳化矽等來構成,亦可未形成有器件。The wafer W shown in FIG1 is a semiconductor wafer with a circular shape, for example, made of silicon as a base material, and its front surface Wa has a grid-shaped area on which a device such as an IC (not shown) is formed. The outer periphery of the wafer W is chamfered to form a chamfered portion Wd (see FIG2 ) in a substantially arc-shaped cross section. In addition, the wafer W may be made of gallium arsenide, sapphire, gallium nitride, ceramic, resin, or silicon carbide, etc., in addition to silicon, and may not have a device formed thereon.
如圖2所示,晶圓W是形成為例如所謂的貼合晶圓W1。亦即,圓形的晶圓W是以接著劑SB1等將大致相同直徑的基材SB(支撐基板)貼合在圖2中朝向下方的正面Wa。因此,藉由將晶圓W與基材SB設成一體來進行處理加工,而變得可提升晶圓W的操作處理性,又,防止加工時之晶圓W的翹曲或破損。晶圓W的中心與基材SB的中心是大致一致。As shown in FIG. 2 , the wafer W is formed as a so-called bonded wafer W1, for example. That is, the circular wafer W is bonded to a substrate SB (support substrate) of approximately the same diameter on the front side Wa facing downward in FIG. 2 with a bonding agent SB1 or the like. Therefore, by integrating the wafer W and the substrate SB for processing, the handling of the wafer W can be improved, and the warping or damage of the wafer W during processing can be prevented. The center of the wafer W is approximately the same as the center of the substrate SB.
在邊緣修整裝置1的基台10上配設有使工作夾台30朝X軸方向移動的切削進給機構13。切削進給機構13是由具有朝X軸方向延伸之軸心的滾珠螺桿130、和滾珠螺桿130平行地配設的一對導軌131、使滾珠螺桿130旋動的馬達132、與內部的螺帽螺合於滾珠螺桿130且底部滑接於導軌131的可動板133所構成。並且,當馬達132使滾珠螺桿130旋動時,可動板133即隨之被導軌131所導引而在X軸方向上移動,且將配設在可動板133上並吸引保持貼合晶圓W1的工作夾台30隨著可動板133的移動而在X軸方向上切削進給。A
圖2所示之工作夾台30具備有例如平面視角下其外形為圓形狀的基部30A,且在基部30A的上表面豎立設置有由例如陶瓷或不鏽鋼等的合金之純質的構件所形成之平面視角下圓環狀的環狀凸部30B。環狀凸部30B的上表面是成為平滑的保持面300,前述保持面300吸引保持已貼附在晶圓W的正面Wa之基材SB的下表面的外周側區域。The
例如,在圓環狀的保持面300的圓環寬度的大致中間位置形成有外徑比基材SB的外徑更小的環狀溝301。並且,在環狀溝301的溝底,在圓周方向上隔著等間隔將複數個吸引孔301a在厚度方向(Z軸方向)上貫通環狀凸部30B及基部30A來形成。於各吸引孔301a之下端側連通有樹脂管件或金屬配管等之吸引流路390,該吸引流路390是連接於真空產生裝置或噴射器機構等之吸引源39。在此,將工作夾台30的環狀凸部30B之上表面300即保持面300之比環狀溝301更外側的區域設為區域300a。For example, an
於各吸引孔301a連接有空氣源38,前述空氣源38是由將空氣供給到工作夾台30的保持面300的壓縮機等所構成。例如,在欲解除由工作夾台30所進行之貼合晶圓W1的吸引保持,而將貼合晶圓W1從工作夾台30搬出的情況下,空氣源38會將壓縮空氣供給到吸引孔301a。其結果,可以藉由從吸引孔301a噴出到保持面300上的空氣,將殘存於保持面300與貼合晶圓W1之間的真空吸附力排除,而形成為可藉由夾具等將貼合晶圓W1把持來從保持面300脫離的狀態。Each
在以基部30A的上表面與環狀凸部30B的內側面所形成的凹狀的空間中,配設有平面視角下圓形板狀的升降工作台31。升降工作台31的上表面是成為由純質構件等所構成的平滑面。並且,升降工作台31是藉由內置於基部30A的氣缸310而變得可朝Z軸方向上下移動。再者,氣缸310亦可是電動汽缸。例如,未上升之狀態的升降工作台31的上表面是和環狀凸部30B的保持面300形成為齊平面。In the concave space formed by the upper surface of the
升降工作台31是例如在對已保持在保持面300之貼附於基材SB的晶圓W施行邊緣修整加工後,在從保持面300搬出貼合晶圓W1時,將貼合晶圓W1舉起到比保持面300更上方,而形成為可以讓未圖示的搬送組件對基材SB的外周緣進行夾邊(edge clamp)。The lifting table 31 is used, for example, to lift the bonded wafer W1 above the
如圖1所示,工作夾台30是藉由配設於其下方的馬達及軸方向為Z軸方向(鉛直方向)的旋轉軸等所構成的工作台旋轉機構32而變得可旋轉。As shown in FIG. 1 , the work table 30 is rotatable by a work
在圖1所示之基台10上的後方側(-X方向側)是將門型支柱14豎立設置成橫跨於工作夾台30的移動路徑上。在門型支柱14的前表面配設有例如使第1切削單元61在正交於X軸方向與Z軸方向的Y軸方向上往返移動的第1水平移動機構15。On the rear side (-X direction side) of the
第1水平移動機構15具備有例如具有在Y軸方向上延伸之軸心的滾珠螺桿150、和滾珠螺桿150平行地配設的一對導軌151、連結於滾珠螺桿150的一端之未圖示的馬達、及內部的螺帽螺合於滾珠螺桿150且側部滑接於導軌151的可動板153。並且,當未圖示之馬達使滾珠螺桿150旋動時,可動板153即隨之被導軌151所導引而在Y軸方向上移動,而可將透過第1切入進給機構17配設在可動板153上的第1切削單元61在Y軸方向上水平移動(分度進給)。The first
第1切入進給機構17具備有:滾珠螺桿170,可以使第1切削單元61在Z軸方向上往返移動,且具有在Z軸方向上延伸之軸心;一對導軌171,和滾珠螺桿170平行地配設;馬達172,連結於滾珠螺桿170;及支撐構件173,支撐第1切削單元61且內部的螺帽螺合於滾珠螺桿170、側部滑接於導軌171。當馬達172使滾珠螺桿170旋動時,支撐構件173即被一對導軌171所導引而在Z軸方向上移動,且伴隨於此而將第1切削單元61朝Z軸方向切入進給。The first
如圖3所示,第1切削單元61具備有:主軸單元61A,使裝設切削刀片613之連結有未圖示的安裝座的主軸610旋轉;及刀片蓋614,圍繞未圖示的安裝座與切削刀片613。As shown in FIG. 3 , the
主軸單元61A具備有軸方向為Y軸方向的主軸610、固定於第1切入進給機構17的支撐構件173的下端側且旋轉自如地支撐主軸610的主軸殼體611、及使主軸610旋轉的馬達612。可旋轉地容置於主軸殼體611中的主軸610是從主軸殼體611內將其前端側朝-Y方向側突出,且在該前端側裝設有未圖示的安裝座。The
圖3所示之切削刀片613是形成為圓環板狀且於中央具備將主軸610插入之孔,並且是在外周具有圓環狀的切刃613b之圓環狀的墊圈型的刀片,其中前述圓環狀的切刃613b是藉由以適當的黏合劑來固定鑽石磨粒等而形成。The
切削刀片613是藉由將未圖示之固定螺帽螺合並鎖緊於主軸610,而成為藉由未圖示之安裝座與固定螺帽從Y軸方向兩側,將切削刀片613以安裝座與具備將主軸610插入之孔的固定凸緣613a來夾持固定並裝設於主軸610的狀態,亦即如圖1、3所示地成為已組裝有第1切削單元61的狀態。切削刀片613的旋轉中心與主軸610的軸心是成為大致一致的狀態。並且,藉由連結於主軸610的後端側的馬達612來旋轉驅動主軸610,且伴隨於此而使切削刀片613旋轉。The
從上方圍繞未圖示之安裝座與切削刀片613的刀片蓋614是以刀片蓋基部614a與滑動蓋部614b所構成,前述滑動蓋部614b是配設在刀片蓋基部614a且可相對於刀片蓋基部614a朝X軸方向滑動。The
在刀片蓋基部614a之+X方向側的側面配設有噴嘴支撐塊614c,且在噴嘴支撐塊614c上配設有例如一支從切削刀片613的徑方向外側朝向切削刀片613噴射切削水的噴淋噴嘴651。於噴淋噴嘴651連通有可透過樹脂管件680送出純水等的水供給源68。如圖4所示,從噴淋噴嘴651供給至切削刀片613的切削水主要會達到將切削刀片613冷卻的作用。A
又,如圖3所示,於噴嘴支撐塊614c配設有例如2支切削水噴嘴652,前述切削水噴嘴652是從斜上方朝向切削刀片613與晶圓W的接觸部位(加工點)來噴射並供給切削水。2支切削水噴嘴652是例如在平面視角下,以切削刀片613作為對稱軸而在Y軸方向上互相對稱地配置。於切削水噴嘴652透過樹脂管件681而連通有水供給源68。如圖4所示,從2支切削水噴嘴652供給到加工點的切削水主要達到以下作用:將產生在加工點的切削屑從晶圓W上洗淨去除。As shown in FIG3 , two cutting
滑動蓋部614b是透過未圖示的氣缸而連結於刀片蓋基部614a,且形成為可在X軸方向上滑動移動。並且,將切削刀片613裝設於主軸610之後,只要將刀片蓋614裝設於主軸殼體611的-Y方向側的前表面,且使已打開之狀態的滑動蓋部614b朝向+X方向滑動來將刀片蓋614蓋上,即可以將切削刀片613容置在刀片蓋614的大致中央的開口內,且成為可讓第1切削單元61切削晶圓W的狀態。The sliding
如圖3所示,滑動蓋部614b從-Y方向側觀看,支撐有大致L字形狀的一對刀片冷卻噴嘴653。一對刀片冷卻噴嘴653是在通過滑動蓋部614b內而朝下方延伸後,以隔著切削刀片613的下部的方式朝+X方向側互相平行地延伸。一對刀片冷卻噴嘴653的每一個的上端是透過樹脂管件683而連通於水供給源68。如圖4所示,一對刀片冷卻噴嘴653具備有朝向切削刀片613的側面的複數個狹縫653a,且可藉由從狹縫653a噴射的切削水來將切削刀片613冷卻及洗淨。As shown in FIG3 , the sliding
圖1所示之邊緣修整裝置1具備有洗淨單元7,前述洗淨單元7是對工作夾台30的保持面300(亦即上表面300)之比環狀溝301更外側的區域300a與包含有環狀溝301在內之工作夾台30的上表面300進行洗淨。圖1、3所示之洗淨單元7具備有例如裝設於刀片蓋614且將高壓水朝下方向(-Z方向)噴射的洗淨噴嘴70。以下,將洗淨單元7設為具備洗淨噴嘴70之第1實施形態的洗淨單元7。The
例如,洗淨噴嘴70是受到裝設在滑動蓋部614b的-X方向側的側面之洗淨噴嘴支撐塊71所支撐。洗淨噴嘴70是將形成於其下端的噴射口700形成為例如,如圖4所示,長邊方向為Y軸方向之矩形狀,並形成為可將洗淨水從噴射口700朝向下方噴射成擴展之大致扇狀。洗淨噴嘴70的上端是透過樹脂管件72而連通於水供給源68。
再者,洗淨噴嘴70亦可連接於未圖示之空氣供給源,且亦可噴射混合有從水供給源68所供給之水、與從空氣供給源所供給之空氣的雙流體。又,洗淨噴嘴70亦可噴射賦與了超音波振動之洗淨水。For example, the cleaning
如圖1、3所示,在第1切削單元61的附近配設有校準單元11,前述校準單元11是檢測已保持在工作夾台30上之晶圓W的應切削之倒角部Wd的位置。校準單元11是依據藉由相機110所取得的拍攝圖像來進行型樣匹配等的圖像處理,而可以檢測倒角部Wd的座標位置。As shown in FIGS. 1 and 3 , a
在圖1所示之門型支柱14的前表面配設有例如使第2切削單元62在Y軸方向上往返移動的第2水平移動機構16。第2水平移動機構16具備有例如具有在Y軸方向上延伸之軸心的滾珠螺桿160、和滾珠螺桿160平行地配設的一對導軌151、連結於滾珠螺桿160的馬達162、及內部的螺帽螺合於滾珠螺桿160且側部滑接於導軌151的可動板163。並且,當馬達162使滾珠螺桿160旋動時,可動板163即隨之被導軌151所導引而在Y軸方向上移動,而可將透過第2切入進給機構18配設在可動板163上的第2切削單元62在Y軸方向上水平移動(分度進給)。A second
第2切入進給機構18具備有:滾珠螺桿180,可以使第2切削單元62在Z軸方向上往返移動,且具有在Z軸方向上延伸之軸心;一對導軌181,和滾珠螺桿180平行地配設;馬達182,連結於滾珠螺桿180;及支撐構件183,支撐第2切削單元62且內部的螺帽螺合於滾珠螺桿180、側部滑接於導軌181。並且,當馬達182使滾珠螺桿180旋動時,支撐構件183即被一對導軌181所導引而在Z軸方向上移動,且伴隨於此而將第2切削單元62朝Z軸方向切入進給。The second
第2切削單元62是配設成與第1切削單元61在Y軸方向上相向。由於上述第1切削單元61與第2切削單元62是大致同樣地被構成,所以省略第2切削單元62的詳細說明。The
在第2切削單元62之刀片蓋614也配設有洗淨單元7。配設在第2切削單元62的刀片蓋614之洗淨單元7具備有受到洗淨噴嘴支撐塊71所支撐的洗淨噴嘴73。洗淨噴嘴73,如圖5所示,是將形成於其下端部分的噴射口730形成為例如圓形狀,並形成為可從噴射口730朝下方噴射大致圓柱狀的洗淨水。洗淨噴嘴73的上端是透過未圖示的樹脂管件而連通於圖3所示之水供給源68。例如,洗淨噴嘴73亦可連接於未圖示之空氣供給源,且亦可噴射混合有從水供給源68所供給之水、與從空氣供給源所供給之空氣的雙流體。又,洗淨噴嘴73亦可噴射賦與了超音波振動之洗淨水。再者,亦可在第2切削單元62配設洗淨噴嘴70,亦可在第1切削單元61配設洗淨噴嘴73。The
再者,圖3所示之噴淋噴嘴651、2支切削水噴嘴652、一對刀片冷卻噴嘴653、洗淨噴嘴70、及圖5和圖6所示之洗淨噴嘴73,是藉由切換各自配設於連通之各樹脂管件內的未圖示的開關閥的開關,而成為和水供給源68連通之狀態與未連通之狀態。Furthermore, the
以下,針對在圖1所示之邊緣修整裝置1中,對工作夾台30的上表面300(保持面300)之比環狀溝301更外側的區域300a與包含有環狀溝301在內之工作夾台30的上表面300進行洗淨後,以所洗淨的工作夾台30保持貼合晶圓W1,並對晶圓W的外周部分的倒角部Wd環狀地進行邊緣修整的情況作說明。Below, with respect to the
在工作夾台30的洗淨中,首先是藉由切削進給機構13將圖1所示之未保持有貼合晶圓W1的工作夾台30往X軸方向移動,而將工作夾台30定位在配設於第1切削單元61的刀片蓋614之洗淨單元7以及配設於第2切削單元62的刀片蓋614之洗淨單元7的下方。During the cleaning of the
因為進行邊緣修整裝置1的裝置整體之控制的未圖示之控制單元掌握有工作夾台30的中心位置,所以也可以掌握從該中心位置朝徑方向外側遠離預定距離之環狀溝301的位置。並且,第1水平移動機構15是例如將工作夾台30的中心位置設為基準,使配設於刀片蓋614之洗淨單元7的洗淨噴嘴70與第1切削單元61一起在Y軸方向上移動,而使環狀溝301之溝寬的中心與洗淨噴嘴70之中心大致一致。其結果,如圖6所示,可將從洗淨噴嘴70噴射成從紙面近前側(+X方向側)觀看為朝下方擴展成大致扇狀之高壓的洗淨水的落地區域定位於環狀溝301與工作夾台30的保持面300。Since the control unit (not shown) that controls the entire device of the
又,第2水平移動機構16是例如將工作夾台30的中心位置設為基準,使配設於刀片蓋614之洗淨單元7的洗淨噴嘴73與第2切削單元62一起在Y軸方向上移動,來對比環狀溝301更外側之區域300a定位朝下方將洗淨水噴射成圓柱狀之洗淨噴嘴73的中心。In addition, the second horizontal moving
接著,圖1所示之第1切入進給機構17使洗淨噴嘴70在Z軸方向上移動並定位到合宜的高度,且第2切入進給機構18使洗淨噴嘴73在Z軸方向上移動並定位到合宜的高度。
在此狀態下,圖6所示之水供給源68會對洗淨噴嘴70供給高壓水。如圖6所示,可將洗淨水從洗淨噴嘴70的噴射口700朝向下方擴展成大致扇狀來噴射,而藉由該洗淨水主要將附著於環狀溝301的溝底及側壁的切削屑或附著於保持面300(上表面300)的切削屑等涵蓋大範圍來洗淨去除。又,藉由水供給源68對洗淨噴嘴73供給高壓水,而如圖6所示,從洗淨噴嘴73之噴射口730將洗淨水朝向下方噴射成圓柱狀,並藉由該洗淨水以精確定位(pinpoint)方式集中地洗淨保持面300之比環狀溝301更外側的區域300a,而去除附著於區域300a的切削屑等。Next, the first
此外,可伴隨於工作台旋轉機構32以預定的旋轉速度使工作夾台30旋轉,而藉由從洗淨噴嘴70所噴射之洗淨水及從洗淨噴嘴73所噴射之洗淨水來將環狀溝301的全周及保持面300全周毫無遺漏地洗淨。Furthermore, the
當進行預定時間環狀溝301的全周的洗淨及保持面300的全周的洗淨,特別是比環狀溝301更外側之區域300a的全周的集中的洗淨後,即停止水供給源68對洗淨噴嘴70及洗淨噴嘴73之水的供給。之後,例如,工作夾台30會進行由旋轉所進行之旋轉乾燥、或使空氣從連通於未圖示之空氣源的洗淨噴嘴70、73噴出而使其乾燥。After the entire circumference of the
接著,開始圖1所示之晶圓W的倒角部Wd的邊緣修整加工。首先,設成晶圓W的中心與工作夾台30的保持面300的中心大致一致,而將貼合晶圓W1以基材SB朝向下側的狀態在保持面300載置成將環狀溝301塞住。並且,讓驅動圖7所示之吸引源39而產生的吸引力通過吸引孔301a及環狀溝301而傳達至保持面300,讓工作夾台30在保持面300上吸引保持已貼附於晶圓W的下表面Wa(正面Wa)的基材SB的外周區域。又,貼合晶圓W1形成為已載置在升降工作台31的上表面之狀態。Next, the edge trimming process of the chamfered portion Wd of the wafer W shown in FIG. 1 is started. First, the center of the wafer W is set to be roughly consistent with the center of the holding
圖1所示之切削進給機構13使工作夾台30在X軸方向上移動,並且例如第1水平移動機構15使校準單元11的相機110在Y軸方向上移動,而以使形成於晶圓W的外周緣的倒角部Wd落在相機110的拍攝區域內的方式將工作夾台30定位在預定位置。藉由相機110進行晶圓W的倒角部Wd的拍攝,校準單元11是依據該拍攝圖像來決定晶圓W的倒角部Wd的邊緣座標的位置。The cutting
例如,如上述地檢測出晶圓W的倒角部Wd的邊緣座標的位置後,將已保持在工作夾台30之貼合晶圓W1定位到例如第1切削單元61的切削刀片613的下方。然後,第1水平移動機構15將以邊緣校準方式所得到的晶圓W的倒角部Wd的邊緣座標的位置設為基準,並如圖7所示,使第1切削單元61朝Y軸方向移動,而將切削刀片613定位到距離晶圓W的倒角部Wd相當於預定距離的徑方向內側的位置。亦即,例如將切削刀片613定位成使切削刀片613的下端面的約2/3接觸於晶圓W的倒角部Wd。For example, after the position of the edge coordinates of the chamfered portion Wd of the wafer W is detected as described above, the bonded wafer W1 held on the
接著,藉由主軸610從+Y方向側觀看為朝逆時針方向高速旋轉,而使固定在主軸610的切削刀片613從+Y方向側觀看為朝逆時針方向高速旋轉。此外,圖1所示之第1切入進給機構17使第1切削單元61下降,並使切削刀片613從晶圓W的背面Wb切入預定深度。切削刀片613的切入深度是成為例如將倒角部Wd完全地切除,而切削刀片613對接著劑SB1為未到達、或稍微切入的深度。將切削刀片613切入進給至預定的高度位置後,在使切削刀片613持續旋轉的狀態下,使工作夾台30從+Z方向側觀看為朝逆時針方向旋轉360度,藉此來切削晶圓W的倒角部Wd全周。再者,亦可藉由第1切削單元61與第2切削單元62,對晶圓W的倒角部Wd進行雙重邊緣修整(dual edge trimming)。Then, the
在上述晶圓W的倒角部Wd的邊緣修整中,是藉由圖3及圖4所示的噴淋噴嘴651,將切削水從切削刀片613的徑方向外側供給至切削刀片613,而主要進行切削刀片613的冷卻。又,藉由2支切削水噴嘴652,將切削水供給到切削刀片613與晶圓W的接觸部分,而主要藉由該切削水進行接觸部位的冷卻及在接觸部位產生之切削屑的洗淨去除。此外,可藉由一對刀片冷卻噴嘴653,從切削刀片613的厚度方向(Y軸方向)對切削刀片613供給切削水,來進行切削刀片613的冷卻。In the edge trimming of the chamfered portion Wd of the wafer W, the cutting water is supplied to the
如上述,本發明之邊緣修整裝置1由於具備對工作夾台30的上表面300之比環狀溝301更外側的區域300a與包含有環狀溝301在內之工作夾台30的上表面300進行洗淨的洗淨單元7,且藉由將洗淨單元7定位在該區域300a與包含有環狀溝301在內之工作夾台30的上表面300,並以工作台旋轉機構32使工作夾台30旋轉,而對該區域300a與包含有環狀溝301在內之工作夾台30的上表面300進行洗淨,而可以藉已被洗淨且上表面300未附著有切削屑之工作夾台30來將貼合晶圓W1設成平坦並保持,因此可以將晶圓W的外周緣的倒角部Wd之以邊緣修整加工所形成的凹部的深度設成一定。又,由於可以將環狀溝301內洗淨,因此變得可防止因切削屑阻塞於環狀溝301而可能產生的工作夾台30的吸引力的降低。As described above, the
在本發明之邊緣修整加工裝置1中,第1實施形態的洗淨單元7由於是裝設於刀片蓋614且朝下方方向噴射高壓水的洗淨噴嘴70、73,並藉由以第1水平移動機構15將從洗淨噴嘴70噴射之高壓水的落地區域定位在工作夾台30的上表面300之比環狀溝301更外側的區域300a、與包含有環狀溝301在內之工作夾台30的上表面300,且一面使工作夾台30旋轉一面進行洗淨,而可以藉被洗淨且上表面300未附著有加工屑的工作夾台30來將貼合晶圓W1設成平坦並保持,因此可以將晶圓W的倒角部Wd之以邊緣修整加工所形成的凹部的深度設成一定。又,由於可以將環狀溝301內洗淨,因此變得可防止因加工屑阻塞於環狀溝301而可能產生的工作夾台30的吸引力的降低。此外,在例如,如本第1實施形態之將第1切削單元61與第2切削單元62以2個相向的方式設置的邊緣修整裝置1中,可以例如在第1切削單元61具備洗淨噴嘴70來作為洗淨單元7,在第2切削單元62具備洗淨噴嘴73來作為洗淨單元7,而使各個洗淨區域不同來改變洗淨的作用。例如,可以藉由使一個洗淨噴嘴73將高壓的洗淨水噴射成圓柱狀並使其到達區域300a來作為對工作夾台30的上表面300之比環狀溝301更外側的區域300a的集中的洗淨專用,並使另一個洗淨噴嘴70將高壓的洗淨水噴射成大致扇狀來作為工作夾台30的上表面300與環狀溝301之大範圍的洗淨專用,而更有效率地將環狀溝301與工作夾台30的上表面300形成為沒有未被洗淨的部位來洗淨。In the
再者,由泵等所構成的水供給源68亦可並非是例如可以將高壓水送出至洗淨噴嘴70、73的類型之構成,亦可使洗淨噴嘴70、73除了水供給源68外還連通於空氣供給源,且例如在各噴嘴內混合空氣,而從各噴射口噴射雙流體,並以空氣的壓力將噴射到洗淨區域內的落地點的水滴設成高壓。Furthermore, the
2.第2實施形態
圖8所示之第2實施形態的邊緣修整裝置1A是變更圖1所示之第1實施形態的邊緣修整裝置1的構成要素的一部分之裝置。以下,說明第2實施形態的邊緣修整裝置1A之與第1實施形態的邊緣修整裝置1的構成不同的部分。2. Second Implementation Form
The
邊緣修整裝置1A具備有第2實施形態之洗淨單元8,前述洗淨單元8是取代第1實施形態的邊緣修整裝置1之具備洗淨噴嘴70的洗淨單元7,而具備海綿80、及對海綿80供給洗淨水的海綿用噴嘴81。The
例如,在邊緣修整裝置1A的基台10上,是設成跨越工作夾台30的移動路徑而豎立設置有支撐橋88,並將洗淨單元8安裝於支撐橋88。洗淨單元8亦可例如藉由未圖示的滑件而變得可在支撐橋88上於Y軸方向上往返移動。海綿用噴嘴81的噴射口是朝向海綿80而開口,且連通於水供給源68。For example, a
對海綿80的種類雖然無特別限定,但可使用例如聚乙烯醇(PVA)海綿等。海綿80是形成為例如圓柱狀,且藉由安裝於支撐橋88的海綿升降機構84而變得可朝Z軸方向上下移動。海綿80的形狀在本例並未限定。The type of the
海綿升降機構84可為例如氣缸,且具備於內部具備未圖示之活塞的筒狀的壓缸管840、及可插入壓缸管840而將上端側安裝於活塞的活塞桿841。並且,將海綿80以可拆卸的方式安裝在活塞桿841的下端側。The
例如,在支撐橋88安裝有在Y軸方向上延伸的空氣噴嘴86。空氣噴嘴86具備有例如工作夾台30的外徑以上的長度,且於其側面具備有朝向下方之複數個狹縫860。並且,空氣噴嘴86可以藉由從狹縫860所噴射之壓縮空氣,而使工作夾台30的保持面300或環狀溝301內部乾燥。空氣噴嘴86是由壓縮機等所構成,並透過樹脂管件等而連通於可供給壓縮空氣的空氣源869。For example, an
以下,針對在圖8所示之邊緣修整裝置1A中,對工作夾台30的環狀溝301與工作夾台30的上表面之比環狀溝301更外側的區域300a進行洗淨後,以所洗淨的工作夾台30保持貼合晶圓W1,並對晶圓W的外周部分的倒角部Wd環狀地進行邊緣修整的情況作說明。Below, with respect to the
在工作夾台30的洗淨中,首先是藉由切削進給機構13將圖8所示之未保持有貼合晶圓W1的工作夾台30往X軸方向移動,而將工作夾台30定位在洗淨單元8的海綿80的下方。藉此,可將海綿80定位成在溝寬方向上大致橫越於工作夾台30的上表面300之比環狀溝301更外側的區域300a與包含有環狀溝301在內之工作夾台30的上表面300。In the cleaning of the
接著,圖8所示之海綿升降機構84使海綿80下降,而如圖9所示,使變形之海綿80接觸於工作夾台30的環狀溝301的溝底與保持面300之比環狀溝301更外側的區域300a。
又,藉由水供給源68對海綿用噴嘴81送出洗淨水,且海綿80吸收從海綿用噴嘴81所噴射之洗淨水,而使海綿80鼓起並具備彈性。又,海綿80亦可為即使吸收洗淨水也不會鼓起之構成。又,亦可從海綿用噴嘴81對工作夾台30的環狀溝301及區域300a直接供給洗淨水。Next, the
此外,可伴隨於工作台旋轉機構32以預定的旋轉速度使工作夾台30旋轉,而藉由供給洗淨水的海綿80將環狀溝301的全周及保持面300的全周洗淨,並將所附著的切削屑等去除。Furthermore, the
當進行預定時間環狀溝301的全周及保持面300,特別是比環狀溝301更外側的區域300a的全周之集中的洗淨後,即停止水供給源68對海綿用噴嘴81之水的供給。又,海綿升降機構84使海綿80上升,而使其遠離工作夾台30。After the entire circumference of the
接著,藉由圖1所示之切削進給機構13使工作夾台30於空氣噴嘴86的下方朝X軸方向移動,並且從空氣噴嘴86朝向工作夾台30的保持面300噴附高壓空氣。其結果,可將仍附著在保持面300及環狀溝301的洗淨水藉由空氣吹跑,而讓保持面300及環狀溝301乾燥。再者,亦可例如讓工作夾台30藉由旋轉所進行之旋轉乾燥、或從連通於未圖示之空氣源的海綿用噴嘴81噴出空氣來乾燥。Next, the work table 30 is moved in the X-axis direction below the
接著,開始進行晶圓W的邊緣修整加工。晶圓W的邊緣修整是與先前所說明的第1實施形態的邊緣修整裝置1中的情況同樣地進行。Next, the edge trimming process of the wafer W is started. The edge trimming of the wafer W is performed in the same manner as in the
在本發明之第2實施形態的邊緣修整裝置1A中,由於可以藉由洗淨單元8具備海綿80、及對海綿80供給洗淨水的海綿用噴嘴81,並將海綿80定位在工作夾台30的上表面300之比環狀溝301更外側的區域300a與包含有環狀溝301在內之工作夾台30的上表面300,且以從海綿用噴嘴81供給洗淨水的海綿80來洗淨,而以已被洗淨且上表面300未附著有加工屑的工作夾台30來將貼合晶圓W1設成平坦並保持,因此可以將晶圓W的外周緣的倒角部Wd之以邊緣修整加工所形成的凹部的深度設成一定。又,由於可以將環狀溝301內洗淨,因此變得可防止因切削屑阻塞於環狀溝301而可能產生的工作夾台30的吸引力的降低。In the
再者,本發明之邊緣修整裝置1並非限定於上述第1、2實施形態之發明,又,關於附加圖式所圖示的裝置的各個構成等也不限定於此,而是可在可以發揮本發明之效果的範圍內作適當變更。例如第1實施形態的邊緣修整裝置1亦可具備第2實施形態的邊緣修整裝置1A的空氣噴嘴86。Furthermore, the
1,1A:邊緣修整裝置 10:基台 11:校準單元 110:相機 13:切削進給機構 130,150,160,170,180:滾珠螺桿 131,151,171,181:導軌 132,162,172,182,612:馬達 133,153,163:可動板 14:門型支柱 15:第1水平移動機構 16:第2水平移動機構 17:第1切入進給機構 173,183:支撐構件 18:第2切入進給機構 30:工作夾台 30A:基部 30B:環狀凸部 300:工作夾台的保持面(上表面) 300a:比環狀溝更外側的區域 301:環狀溝 301a:吸引孔 31:升降工作台 310:氣缸 32:工作台旋轉機構 38,869:空氣源 39:吸引源 390:吸引流路 61:第1切削單元 61A:主軸單元 610:主軸 611:主軸殼體 613:切削刀片 613b:切刃 613a:固定凸緣 614:刀片蓋 614a:刀片蓋基部 614b:滑動蓋部 614c:噴嘴支撐塊 62:第2切削單元 651:噴淋噴嘴 652:切削水噴嘴 653:刀片冷卻噴嘴 653a,860:狹縫 68:水供給源 680,681,683,72:樹脂管件 7,8:洗淨單元 70,73:洗淨噴嘴 700,730:噴射口 71:洗淨噴嘴支撐塊 80:海綿 81:海綿用噴嘴 84:海綿升降機構 840:壓缸管 841:活塞桿 86:空氣噴嘴 88:支撐橋 SB:基材 SB1:接著劑 W:晶圓 Wa:晶圓的正面 Wb:晶圓的上表面(背面) Wd:倒角部 W1:貼合晶圓 X,Z,+X,-X,+Y,-Y,+Z,-Z:方向1,1A: Edge trimming device 10: Base 11: Calibration unit 110: Camera 13: Cutting feed mechanism 130,150,160,170,180: Ball screw 131,151,171,181: Guide rail 132,162,172,182,612: Motor 133,153,163: Movable plate 14: Door support 15: 1st horizontal movement mechanism 16: 2nd horizontal movement mechanism 17: 1st cutting feed mechanism 1 73,183: Support member 18: Second cutting feed mechanism 30: Work clamp 30A: Base 30B: Annular convex portion 300: Holding surface (upper surface) of work clamp 300a: Area outside the annular groove 301: Annular groove 301a: Suction hole 31: Lifting table 310: Cylinder 32: Work table rotation mechanism 38,869: Air source 39: Suction source 390: Suction flow path 61: First cutting unit 61A: Spindle unit 610: Spindle 611: Spindle housing 613: Cutting blade 613b: Cutting edge 613a: Fixed flange 614: Blade cover 614a: Blade cover base 614b: Sliding cover 614c: Nozzle support block 62: Second cutting unit 651: Spray nozzle 652: Cutting water nozzle 653: Blade cooling nozzle 653a,860: Slit 68: Water supply source 680,681,683,72: Resin pipe fittings 7,8: Cleaning unit 70,73: Cleaning nozzle 700,730: Nozzle 71: Cleaning nozzle support block 80: Sponge 81: Sponge nozzle 84: Sponge lifting mechanism 840: Cylinder tube 841: Piston rod 86: Air nozzle 88: Support bridge SB: Substrate SB1: Adhesive W: Wafer Wa: Front surface of wafer Wb: Upper surface (back surface) of wafer Wd: Chamfered part W1: Bonding wafer X,Z,+X,-X,+Y,-Y,+Z,-Z: Direction
圖1是顯示洗淨單元具備洗淨噴嘴之邊緣修整裝置之一例的立體圖。 圖2是顯示工作夾台的構造之一例的截面圖。 圖3是顯示由第1切削單元及洗淨噴嘴所構成的洗淨單元之一例的立體圖。 圖4是說明第1切削單元的噴淋噴嘴、2支切削水噴嘴、一對刀片冷卻噴嘴、及洗淨噴嘴的構造及配設位置的示意的平面圖。 圖5是說明第2切削單元的噴淋噴嘴、2支切削水噴嘴、一對刀片冷卻噴嘴、及洗淨噴嘴的構造及配設位置的示意的平面圖。 圖6是說明在具備洗淨噴嘴的洗淨單元中,一面使工作夾台旋轉一面對工作夾台的上表面(保持面)之比環狀溝更外側的區域與包含有環狀溝在內之工作夾台的上表面進行洗淨之狀態的截面圖。 圖7是說明以已對上表面之比環狀溝更外側的區域與包含有環狀溝在內之上表面進行洗淨的工作夾台來吸引保持貼合晶圓,並藉由第1切削單元來對晶圓的倒角部進行邊緣修整之情況的截面圖。 圖8是顯示洗淨單元為具備海綿的邊緣修整裝置之一例的立體圖。 圖9是說明在具備海綿的洗淨單元中,一面使工作夾台旋轉一面對工作夾台的上表面之比環狀溝更外側的區域與包含有環狀溝在內之工作夾台的上表面進行洗淨之狀態的截面圖。FIG. 1 is a perspective view showing an example of an edge trimming device having a cleaning nozzle in a cleaning unit. FIG. 2 is a cross-sectional view showing an example of the structure of a work clamp. FIG. 3 is a perspective view showing an example of a cleaning unit composed of a first cutting unit and a cleaning nozzle. FIG. 4 is a schematic plan view showing the structure and arrangement position of a shower nozzle, two cutting water nozzles, a pair of blade cooling nozzles, and a cleaning nozzle of the first cutting unit. FIG. 5 is a schematic plan view showing the structure and arrangement position of a shower nozzle, two cutting water nozzles, a pair of blade cooling nozzles, and a cleaning nozzle of the second cutting unit. FIG6 is a cross-sectional view showing a state in which a cleaning unit equipped with a cleaning nozzle cleans the area outside the annular groove and the upper surface of the work chuck including the annular groove while rotating the work chuck. FIG7 is a cross-sectional view showing a state in which a wafer is held by attracting the work chuck whose upper surface has been cleaned outside the annular groove and the upper surface including the annular groove, and the edge of the chamfered portion of the wafer is trimmed by the first cutting unit. FIG8 is a perspective view showing an example of an edge trimming device equipped with a sponge in the cleaning unit. 9 is a cross-sectional view showing a state in which a region on the upper surface of the work clamp outside the annular groove and the upper surface of the work clamp including the annular groove are cleaned while the work clamp is rotated in the cleaning unit equipped with a sponge.
1:邊緣修整裝置 1: Edge trimming device
10:基台 10: Base
11:校準單元 11: Calibration unit
110:相機 110: Camera
13:切削進給機構 13: Cutting feed mechanism
130,150,160,170,180:滾珠螺桿 130,150,160,170,180: ball screw
131,151,171,181:導軌 131,151,171,181:Guide rails
132,162,172,182:馬達 132,162,172,182: Motor
133,153,163:可動板 133,153,163: Movable plate
14:門型支柱 14: Door-type pillars
15:第1水平移動機構 15: 1st horizontal movement mechanism
16:第2水平移動機構 16: Second horizontal movement mechanism
17:第1切入進給機構 17: 1st cutting feed mechanism
173,183:支撐構件 173,183: Support components
18:第2切入進給機構 18: Second cutting feed mechanism
30:工作夾台 30: Workbench
300:工作夾台的保持面(上表面) 300: Holding surface of the work clamp (upper surface)
301:環狀溝 301: annular groove
301a:吸引孔 301a: Suction hole
31:升降工作台 31: Lifting workbench
32:工作台旋轉機構 32: Workbench rotation mechanism
61:第1切削單元 61: 1st cutting unit
61A:主軸單元 61A: Spindle unit
610:主軸 610: Main axis
611:主軸殼體 611: Spindle housing
613:切削刀片 613: Cutting blade
62:第2切削單元 62: 2nd cutting unit
7:洗淨單元 7: Washing unit
70:洗淨噴嘴 70: Clean the nozzle
71:洗淨噴嘴支撐塊 71: Clean the nozzle support block
73:洗淨噴嘴 73: Clean the nozzle
614:刀片蓋 614: Blade cover
W:晶圓 W: Wafer
Wa:晶圓的正面 Wa: front side of the wafer
Wb:晶圓的上表面(背面) Wb: upper surface (back side) of the wafer
SB:基材 SB: Base material
W1:貼合晶圓 W1: Wafer bonding
+X,-X,+Y,-Y,+Z,-Z:方向 +X,-X,+Y,-Y,+Z,-Z: Direction
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019144404A JP7347986B2 (en) | 2019-08-06 | 2019-08-06 | edge trimming device |
| JP2019-144404 | 2019-08-06 |
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| TW202107555A TW202107555A (en) | 2021-02-16 |
| TWI855112B true TWI855112B (en) | 2024-09-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW109123778A TWI855112B (en) | 2019-08-06 | 2020-07-14 | Edge trimming device |
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| US (1) | US20210043473A1 (en) |
| JP (1) | JP7347986B2 (en) |
| KR (1) | KR102921008B1 (en) |
| CN (1) | CN112349622A (en) |
| BE (1) | BE1028529B1 (en) |
| FR (1) | FR3099718B1 (en) |
| SG (1) | SG10202006744YA (en) |
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| JP7560313B2 (en) * | 2020-10-13 | 2024-10-02 | 株式会社ディスコ | Cutting Equipment |
| JP7532265B2 (en) * | 2021-01-12 | 2024-08-13 | 株式会社ディスコ | Assistive devices |
| CN112976266A (en) * | 2021-03-04 | 2021-06-18 | 王仕英 | Blank repairing device for ceramic production |
| JP7697810B2 (en) * | 2021-04-19 | 2025-06-24 | 株式会社ディスコ | Processing apparatus and wafer processing method |
| CN114227413B (en) * | 2021-09-23 | 2022-12-27 | 广东热浪新材料科技有限公司 | Polishing grinding disc device for marble plate production |
| JP2023071083A (en) * | 2021-11-10 | 2023-05-22 | 株式会社ディスコ | Wafer processing method |
| CN114102327B (en) * | 2021-12-10 | 2024-02-06 | 环球石材(东莞)股份有限公司 | Marble corner grinding device |
| CN114559323A (en) * | 2021-12-21 | 2022-05-31 | 杭州盾源聚芯半导体科技有限公司 | Automatic chamfering equipment for silicon ring |
| CN115172142B (en) * | 2022-06-21 | 2024-10-18 | 武汉新芯集成电路股份有限公司 | Wafer trimming method and wafer trimming machine |
| CN115284027B (en) * | 2022-08-19 | 2023-03-24 | 中品智能机械有限公司 | Numerical control assembly line is with cutting material machining center |
| JP2024050022A (en) * | 2022-09-29 | 2024-04-10 | 株式会社ディスコ | Cutting device and cutting method |
| CN115625585B (en) * | 2022-12-21 | 2023-04-07 | 泰州市永宁亚克力制品有限公司 | Trimming device is used in processing of inferior gram force board |
| US12550652B2 (en) | 2023-04-10 | 2026-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer edge trimming process including water jet and wedge separation and methods thereof |
| CN116811087B (en) * | 2023-08-30 | 2023-11-28 | 福建泉州振跃工艺品有限公司 | Automatic trimming device for resin artwork production |
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Also Published As
| Publication number | Publication date |
|---|---|
| FR3099718B1 (en) | 2023-04-14 |
| TW202107555A (en) | 2021-02-16 |
| JP2021024036A (en) | 2021-02-22 |
| CN112349622A (en) | 2021-02-09 |
| US20210043473A1 (en) | 2021-02-11 |
| KR20210018060A (en) | 2021-02-17 |
| JP7347986B2 (en) | 2023-09-20 |
| SG10202006744YA (en) | 2021-03-30 |
| BE1028529A1 (en) | 2022-02-28 |
| BE1028529B1 (en) | 2022-03-08 |
| KR102921008B1 (en) | 2026-01-30 |
| FR3099718A1 (en) | 2021-02-12 |
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