TWI911739B - 高壓基板處理裝置 - Google Patents

高壓基板處理裝置

Info

Publication number
TWI911739B
TWI911739B TW113118764A TW113118764A TWI911739B TW I911739 B TWI911739 B TW I911739B TW 113118764 A TW113118764 A TW 113118764A TW 113118764 A TW113118764 A TW 113118764A TW I911739 B TWI911739 B TW I911739B
Authority
TW
Taiwan
Prior art keywords
door
housing
processing apparatus
module
substrate processing
Prior art date
Application number
TW113118764A
Other languages
English (en)
Chinese (zh)
Other versions
TW202449222A (zh
Inventor
金淵澈
Original Assignee
南韓商株式會社Hpsp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=89385323&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI911739(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 南韓商株式會社Hpsp filed Critical 南韓商株式會社Hpsp
Publication of TW202449222A publication Critical patent/TW202449222A/zh
Application granted granted Critical
Publication of TWI911739B publication Critical patent/TWI911739B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW113118764A 2023-05-22 2024-05-21 高壓基板處理裝置 TWI911739B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020230065805A KR102614456B1 (ko) 2023-05-22 2023-05-22 고압 기판 처리 장치
KR10-2023-0065805 2023-05-22

Publications (2)

Publication Number Publication Date
TW202449222A TW202449222A (zh) 2024-12-16
TWI911739B true TWI911739B (zh) 2026-01-11

Family

ID=89385323

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113118764A TWI911739B (zh) 2023-05-22 2024-05-21 高壓基板處理裝置

Country Status (4)

Country Link
KR (1) KR102614456B1 (ko)
CN (1) CN120883346A (ko)
TW (1) TWI911739B (ko)
WO (1) WO2024242536A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102614456B1 (ko) * 2023-05-22 2023-12-19 주식회사 에이치피에스피 고압 기판 처리 장치
KR102737706B1 (ko) * 2024-06-18 2024-12-04 (주) 예스티 기판 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150086831A (ko) * 2014-01-20 2015-07-29 주식회사 풍산 반도체 기판 처리용 챔버 개폐장치
KR20210127443A (ko) * 2020-04-14 2021-10-22 주식회사 원익아이피에스 기판 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3468577B2 (ja) * 1994-04-14 2003-11-17 東京エレクトロン株式会社 熱処理装置
JP3578983B2 (ja) * 2000-12-06 2004-10-20 東京エレクトロン株式会社 縦型熱処理装置、および被処理体移載方法
KR101613717B1 (ko) * 2014-02-17 2016-04-22 (주) 예스티 반도체 부품 공정처리 챔버장치
EP3707746B1 (en) * 2017-11-11 2023-12-27 Micromaterials LLC Gas delivery system for high pressure processing chamber
KR102349037B1 (ko) * 2018-09-17 2022-01-10 주식회사 원익아이피에스 웨이퍼 공정용 리액터의 가스 제어 장치
KR20200092757A (ko) * 2019-01-25 2020-08-04 주식회사 케이씨텍 개폐 장치 및 이를 포함하는 기판 처리 장치
KR102616514B1 (ko) * 2019-03-14 2023-12-26 주식회사 케이씨텍 기판 처리 장치 및 기판 처리 방법
KR102614456B1 (ko) * 2023-05-22 2023-12-19 주식회사 에이치피에스피 고압 기판 처리 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150086831A (ko) * 2014-01-20 2015-07-29 주식회사 풍산 반도체 기판 처리용 챔버 개폐장치
KR20210127443A (ko) * 2020-04-14 2021-10-22 주식회사 원익아이피에스 기판 처리 장치

Also Published As

Publication number Publication date
CN120883346A (zh) 2025-10-31
KR102614456B1 (ko) 2023-12-19
WO2024242536A1 (ko) 2024-11-28
KR102614456B9 (ko) 2026-04-01
TW202449222A (zh) 2024-12-16

Similar Documents

Publication Publication Date Title
TW202449222A (zh) 高壓基板處理裝置
TWI890448B (zh) 高壓基板處理裝置
US10546761B2 (en) Substrate processing apparatus
US20130078823A1 (en) Method of manufacturing semiconductor device and substrate processing apparatus
JP2019062194A (ja) 基板処理装置、半導体装置の製造方法、および、プログラム
KR102076643B1 (ko) 기판 처리 장치 및 반도체 장치의 제조 방법
US20220170160A1 (en) Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
KR100653720B1 (ko) 열처리 설비 및 이의 구동방법
JP2003133233A (ja) 基板処理装置
WO2007018139A1 (ja) 半導体装置の製造方法および基板処理装置
US6828234B2 (en) RTP process chamber pressure control
US20030221623A1 (en) Fabricating a semiconductor device
US20190085455A1 (en) Substrate processing apparatus
TW202607866A (zh) 具有工廠介面中心的高產量基板處理群集工具
TWI909434B (zh) 高壓基板處理裝置
TWI761758B (zh) 半導體裝置的製造方法、基板處理裝置及記錄媒體
KR20040096377A (ko) 산화막 및 산질화막 형성 방법
JP2019021910A (ja) 基板処理装置、基板保持具及び半導体装置の製造方法
US20220301865A1 (en) Substrate processing apparatus, reaction tube, method of manufacturing semiconductor device, and recording medium
TWI906990B (zh) 高壓基板處理裝置
JP4241513B2 (ja) 基板処理装置および処理方法
TWI914936B (zh) 高壓基板處理裝置
JP2026515510A (ja) 高圧基板処理装置
JP2010073978A (ja) 基板処理方法
US20050223981A1 (en) Processing device using shower head structure and processing method