TWI924499B - Memory device and programming method thereof - Google Patents

Memory device and programming method thereof

Info

Publication number
TWI924499B
TWI924499B TW114117086A TW114117086A TWI924499B TW I924499 B TWI924499 B TW I924499B TW 114117086 A TW114117086 A TW 114117086A TW 114117086 A TW114117086 A TW 114117086A TW I924499 B TWI924499 B TW I924499B
Authority
TW
Taiwan
Prior art keywords
memory device
programming method
programming
memory
Prior art date
Application number
TW114117086A
Other languages
Chinese (zh)
Inventor
周佑亮
蔡文哲
Original Assignee
旺宏電子股份有限公司
Filing date
Publication date
Application filed by 旺宏電子股份有限公司 filed Critical 旺宏電子股份有限公司
Application granted granted Critical
Publication of TWI924499B publication Critical patent/TWI924499B/en

Links

TW114117086A 2025-05-07 Memory device and programming method thereof TWI924499B (en)

Publications (1)

Publication Number Publication Date
TWI924499B true TWI924499B (en) 2026-05-01

Family

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200733119A (en) 2005-10-14 2007-09-01 Sandisk Corp Method and apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US8654587B2 (en) 2010-08-11 2014-02-18 Samsung Electronics Co., Ltd. Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
US20140313823A1 (en) 2010-05-31 2014-10-23 Samsung Electronics Co., Ltd. Nonvolatile memory device, system and programming method with dynamic verification mode selection
US20180211709A1 (en) 2017-01-20 2018-07-26 Samsung Electronics Co., Ltd. Nonvolatile memory device for varying a recovery section and operating method thereof
TWI679646B (en) 2015-09-25 2019-12-11 南韓商愛思開海力士有限公司 Memory device and method of operating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200733119A (en) 2005-10-14 2007-09-01 Sandisk Corp Method and apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US20140313823A1 (en) 2010-05-31 2014-10-23 Samsung Electronics Co., Ltd. Nonvolatile memory device, system and programming method with dynamic verification mode selection
US8654587B2 (en) 2010-08-11 2014-02-18 Samsung Electronics Co., Ltd. Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
TWI679646B (en) 2015-09-25 2019-12-11 南韓商愛思開海力士有限公司 Memory device and method of operating the same
US20180211709A1 (en) 2017-01-20 2018-07-26 Samsung Electronics Co., Ltd. Nonvolatile memory device for varying a recovery section and operating method thereof

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