M311992 八、新型說明： 【新型所屬之技術領域】 本創作係有關於-種經調整且具有平面夹層結構之高 頻電阻，特別是關於-種高頻終端電阻，該平面夾層結構於 -基板上具有-電賴，於電峨上佈置—將電阻膜橫截面 至少部分縮小之切口’且切口與電阻膜之側面之間存在間隔 :進而達成將特性阻抗調整至—預定值之目的。 【先前技術】 按’為將高頻電阻構造為寬頻帶之高頻電阻，電阻膜結 構須與南頻侧之環境條件桃配；為膽上靖述類型之 南頻終端電阻，習知係於電阻膜邊緣藉由切口將—平面區域 電鈍化或於結構之難面⑽置較深之切σ;但由此 =問題祕，切口區_出現之局部高電流密度會導致電阻 臈/皿度過冋’上34情況之後果為，高頻電随可作為窄頻帶 之高頻電阻使用，或在此情況下作為無狀生產廢品被剔除 【新型内容】 ϋ作之主要目的，在於改進上文所述類型之高頻電ΐϊ ^在產量討能大、鱗最龄纏性以及神損失升高之 、藉由對特性阻抗之調整使熱量於電阻膜上實現最指 化分佈。 、 本創作之另— 個目的，在於切口區域内亦可實現有利之 M311992 熱分佈，從而避免因電流密度升高而產生過熱位置。 本創作之主要特徵，係在本創作之高頻電阻中，切口與 電阻膜之侧面之間存在間隔。 依前述特徵’該切口最好設為於平面夾層結構之法線的 方向上完全_電_之橫截面；如此，電_於高頻能量 擴散方向上位於切口之後的一區域被完全鈍化，無法再將電 "IL自廷阻膜之苐一末端處的輸入導線傳輸至電阻膜之第二末 •端處的接地導線，從而相應改變整個電阻膜上之歐姆電阻（ 表面電阻）。 本創作之又-特徵係在於電阻膜之平面内的切口若採取 u形設計，具有兩個邊腳及—連接兩邊腳之基底，且U形切 口之口端對著電阻膜之第二末端，其中，U形切口邊腳 長度遇大於U形切口基底之長度，則電阻膜上之電流密度 可於電阻狀紐範_在高舰量之擴散方社均勻分佈 馨，使得電阻膜上之發熱現象可發生於切口區域内-更大面積 山碧J作之再才寸徵係為··於U形切口邊腳遠離基底之自 由端上刀卿置—切σ之延長部分，可對表面電阻進行特別 精$之猶，鱗延長部分之合理設計為彼此對稱。 •丨作之另特徵料切σ佈置於電賴之側面 中心位置上。 依前—特徵：切口與電阻膜之側面之間存在間隔。 M311992 此方案之優點在於，在切Π區域内亦可實現有利之熱分 佈，從而避免因電流密度升高而產生過熱位置。 【實施方式】 有關本創作為達上述之使用目的與功效，所採用之技術 手段’兹舉出較佳可行之實施例，並配合圖式所示，詳述如 下：M311992 VIII. New Description: [New Technology Field] This creation is about high-frequency resistors with a planar sandwich structure, especially for high-frequency termination resistors. The planar sandwich structure is on the substrate. There is an electric galvanic arrangement on the electric raft - a slit which reduces the cross section of the resistive film at least partially and a gap between the slit and the side surface of the resistive film: thereby achieving the purpose of adjusting the characteristic impedance to a predetermined value. [Prior Art] According to 'the high-frequency resistance is constructed as a high-frequency resistance of a wide frequency band, the structure of the resistive film must be matched with the environmental condition of the south-frequency side; for the south-frequency terminating resistor of the type of Jingshang, the conventional system is The edge of the resistive film is electrically passivated by the slit or the deep σ of the difficult surface (10) of the structure; but the problem is that the local high current density of the cut region _ causes the resistance 皿/dish冋 'The situation after 34 is that high frequency electricity can be used as a high frequency resistor of narrow frequency band, or in this case, it is rejected as a waste product. [New content] The main purpose of the work is to improve the above. The high-frequency electric ΐϊ of the type described above achieves the most direct distribution of heat on the resistive film by adjusting the characteristic impedance in the production capacity, the age of the scale, and the increase in the loss of God. Another purpose of this creation is to achieve a favorable heat distribution of M311992 in the region of the cut to avoid overheating due to an increase in current density. The main feature of this creation is that in the high-frequency resistance of this creation, there is a gap between the slit and the side of the resistive film. According to the foregoing feature, the slit is preferably set to be completely cross-section in the direction of the normal of the planar sandwich structure; thus, a region in the direction of high-frequency energy diffusion that is located behind the slit is completely passivated, Then, the input wire at the end of the electric <IL self-resistance film is transmitted to the grounding wire at the second end of the resistive film, thereby correspondingly changing the ohmic resistance (surface resistance) on the entire resistive film. The further feature of the present invention is that if the slit in the plane of the resistive film adopts a u-shaped design, it has two side legs and a base connecting the two legs, and the mouth end of the U-shaped slit faces the second end of the resistive film. Wherein, the length of the U-shaped cutting leg is greater than the length of the U-shaped cutting base, and the current density on the resistive film can be evenly distributed in the diffusion of the high-volume, so that the heating phenomenon on the resistive film Can occur in the area of the incision - the larger area of the mountain is made by the J. The edge of the U-shaped incision away from the base of the free end of the knife - the extension of the cut σ, the surface resistance can be In particular, the rational design of the scale extensions is symmetrical to each other. • The other characteristic cut σ is placed on the side center of the electric raft. According to the former - feature: there is a gap between the slit and the side of the resistive film. M311992 The advantage of this solution is that a favorable heat distribution can also be achieved in the cutting area to avoid overheating due to an increase in current density. [Embodiment] The present invention is based on the technical means adopted for achieving the above-mentioned purpose and effect of use, and a preferred and feasible embodiment is shown, which is described in detail below with reference to the following drawings:
首先，請配合參閱則所示，一種高頻終端電阻的較佳 實施例’其包括-電阻卿、—輸人導線12及_接地導線14 ;電阻膜10、輸人導線I2及接地導線Μ各自崎之形式佈置 於-基板16上，構成-平面夾層結構；輸人導線辦電阻膜 10之-第-末端18電氣树，又在她_相對於第一末端 18之另端設第二末端2〇，而接地導線14與電阻膜之第二末 端2〇電氣相連；電__於將高頻能量轉化為熱量，輸入 導線12用於輸人高頻能量，接地導線14用於與—接地觸點（ 未顯示）建立電氣連接。 由側面26在垂直於高頻能量在電阻膜10上的一擴散方 向22的方向上以及在垂直於平面夾層結構的一法線24的方 勺上界定第一末端18與第二末端2〇之間的電阻膜1〇 ;根據本 創作為達成將特性阻抗調整至一預定值之目的，佈置一將 電阻膜橫截面至少部分縮小之U形切口28，該切口與電阻膜 之側面之間存在間隔，該U形切口28佈置於側面26之間的中 u位置上’其上的一開口端3〇對著電阻膜1〇之第二末端2〇 ; M311992 U形切口28由兩個平行邊腳32及—連接兩邊_之基底％構 成其t ’邊腳32在平行於高頻能量在電阻膜1〇上之擴散方 肖22的方向上延伸’其長度遠大於縣34之長度；邊腳32之 間由此出現-較大之電鈍化區，與此同時，切_的區域内 仍留有杈大之電活性橫截面；如此，電流密度即可分佈於一 個較大之橫截面區域内，從而避免某些密集部位上出現高電 流密度；此舉亦使翻產生之魏可分佈於-較大之區域， • 從而避免某些密集部位大幅度升溫發熱。 為將根據本創作之高頻電阻構造為寬頻帶之高頻電阻 ，電阻膜結構須與高頻相關之環境條件相匹配，其中，根據 本創作於結構中央-有利於熱分佈之位置縱向進行調整，同 日才保持影響，以達到調整至盡可能最佳匹配值之目的，·使用 習知方法調整特性阻抗時，由於電流密度增大，會產生過熱 位置，而藉由根據本創作之切口28，電流密度則將於電阻結 籲獅之長度範圍内在高頻能量的擴散方向22上均勻分佈，載 流阻抗面積大幅增長。 圖2及圖3所示係本創作之切口 28對電阻膜1〇之特性阻 抗的有利影響；圖2、圖3所示之數值為模擬數值；圖4〜圖6 所示係分別展示未經調整（圖4)、藉由切口28之第一實施例 調整（圖5)以及藉由切口28之第二實施例調整（圖6)後電 阻膜10之不同位置上的試驗溫度值；在圖5所示之第一實施 例中，切口28採取由邊腳32及基底34構成之純U形設計；在 M311992 圖6所不之第二實施例中，切口28除具有與圖$所示相同之口 形設計外，亦於邊腳32之自由端上具有垂直於邊卿之延長 部分36 ’該等延長部分36垂直於高頻能量之擴散方向^，且 額外遮蔽電阻結構Π)之—面積，使得其上無法通過電流，亦 即使該面積電鈍化，從而不參與自第一末端18至第二末端如 之電流流動；由此對電阻卿之歐姆電阻（表面電阻）產生 額外影響。 附圖清楚展示了電阻膜上與所選調整切口相關聯之溫 度分佈趨勢；藉由本創作之切σ28所完成之調整在技術上十 分易於實現，且可產生均勻的溫度分佈，在調整切口很大時 亦然；或更確切言之’正是在_很大之情況下才會引起均 勻的溫度分佈，與常規技術所採取之極限切口（1形切口）相 反，藉由根據本創作之切口28，當輕幅度較大時溫度甚至 會由於均勻之分佈而降低；由於功率損失較高，故會產生相 比波長而言的大尺寸電阻結構；然而為達絲佳之載荷，藉 由一變化之結構寬度對基板16上的電阻結構1〇，更特定言之 為電阻面於縱向22上之電阻結構，進行匹配；切口28若為調 整之目的而採取具有較長長度之設計，财可對反射係數產 生有利影響。 綜上所述’可實現下列優點：溫度分佈穩定（無熱點） ，確保在整個頻寬範_皆具有難之反射係數，藉由高額 產量而降低成本。 M311992 該調整方法之有利特性直接對電阻基板之使用產生影 響’實際應用時須遵循相應的邊緣條件；該㈣緣條件例如 為知接處之最〶熱貞荷或電阻膜所允許之最細溫性；本創 作藉由其之有獅性尤其翻於大批量之高頻電阻生產（批 里生產’流水線生產）。 此方案之優點在於，在切口區域内亦可實現有利之熱分 佈，從而避免因電流密度升高而產生過熱位置。 在一上文所述之類型中，切口之合理設計為，切口於平 面夾層結構之法線的方向上完全截斷電阻膜之橫截面；如此 笔阻膜於面頻能量擴散方向上位於切口之後的一區域被完 王鈍化，無法再將電流自電阻膜之第一末端處的輸入導線傳 輸至電阻膜之第二末端處的接地導線，從而相應改變整個電 阻膜上之表面電阻。 综上所述，本創作實施例確實已能達到所預期之目的及 使用功效，且於同類產品中更未見有相同創作特徵公知、公 用在先者，故本創作當能符合新型專利之申請要件，爰依法 提出申請，懇請早曰審結，並核賜專利，深感德澤。 【圖式簡單說明】 圖1所示係為本創作之高頻電阻的一較佳實施例之俯 視圖。 圖2所示係為圖1所示未經一切口調整之高頻電阻的 M311992 頻率範圍内對其特性阻抗進行匹配之圖表。 圖3所不係為圖1所示已藉由根據本創作之切口調整 之高頻電阻的頻率範圍内對其特性阻抗進行匹 配之圖表。 固4所示係為_未經根據本創作之切口調整之高頻 電阻的另一實施例之俯視圖。 圖5所不係為圖4之高頻電阻之俯視圖，該高頻電First, please refer to the preferred embodiment of a high frequency terminating resistor, which includes a resistor, a conductor wire 12 and a grounding conductor 14, a resistive film 10, an input conductor I2 and a grounding conductor. The form of the saki is arranged on the substrate 16 to form a planar sandwich structure; the first conductor of the resistive film 10 of the input conductor 10 is electrically connected to the second end 2 of the other end of the first end 18 〇, and the grounding wire 14 is electrically connected to the second end 2〇 of the resistive film; the electric __ is used to convert high frequency energy into heat, the input wire 12 is used to input high frequency energy, and the grounding wire 14 is used for grounding contact A point (not shown) establishes an electrical connection. The first end 18 and the second end 2 are defined by the side 26 in a direction perpendicular to the direction of diffusion 22 of the high frequency energy on the resistive film 10 and on a square perpendicular to a normal 24 of the planar sandwich structure. a resistive film 1 〇; according to the present invention, for the purpose of adjusting the characteristic impedance to a predetermined value, a U-shaped slit 28 is formed which at least partially reduces the cross section of the resistive film, and the slit is spaced from the side of the resistive film. The U-shaped slit 28 is disposed at the middle u position between the side faces 26, and an open end 3 thereof is opposed to the second end 2〇 of the resistive film 1〇; the M311992 U-shaped slit 28 is composed of two parallel legs. 32 and - the base of the two sides _ constitutes its t 'edge 32 extending in a direction parallel to the high-frequency energy in the diffusion mode 22 on the resistive film 1 ''the length is much larger than the length of the county 34; A large electrical passivation zone is thus formed, while at the same time, a large electrical active cross section remains in the region of the cut- _; thus, the current density can be distributed over a larger cross-sectional area, Thereby avoiding high current densities in certain dense areas; this Wei also make it turn produce can be distributed - the larger the area, • to avoid certain parts of the densely significant warming fever. In order to construct the high-frequency resistor according to the present invention as a high-frequency resistor of a wide frequency band, the structure of the resistive film must be matched with the environmental conditions related to the high frequency, wherein the longitudinal adjustment is made according to the present invention at the center of the structure, which is advantageous for the heat distribution. On the same day, the influence is maintained to achieve the purpose of adjusting to the best possible matching value. When the characteristic impedance is adjusted by the conventional method, the overheating position is generated due to the increase of the current density, and by the slit 28 according to the present creation, The current density is evenly distributed in the diffusion direction 22 of the high-frequency energy within the length range of the resistance lion, and the current-carrying impedance area is greatly increased. Fig. 2 and Fig. 3 show the favorable influence of the slit 28 of the present invention on the characteristic impedance of the resistive film 1〇; the values shown in Fig. 2 and Fig. 3 are analog values; the figures shown in Fig. 4 to Fig. 6 are respectively shown. Adjustment (Fig. 4), adjustment of the first embodiment of the slit 28 (Fig. 5), and adjustment of the test temperature value at different positions of the resistive film 10 by the second embodiment of the slit 28 (Fig. 6); In the first embodiment shown in Figure 5, the slit 28 takes the form of a pure U-shape formed by the legs 32 and the base 34; in the second embodiment of the M311992 Figure 6, the slit 28 has the same dimensions as shown in Figure $ In addition to the mouth-shaped design, the extension portion 36 of the edge 32 is perpendicular to the edge of the edge 32. The extension portion 36 is perpendicular to the diffusion direction of the high-frequency energy, and additionally shields the area of the resistor structure. This makes it impossible to pass current, even if the area is electrically passivated, so that it does not participate in current flow from the first end 18 to the second end; thus, it has an additional influence on the ohmic resistance (surface resistance) of the resistor. The accompanying drawings clearly show the temperature distribution trends associated with the selected adjustment slits on the resistive film; the adjustments made by the cut σ28 of the present invention are technically very easy to implement and produce a uniform temperature distribution with large incision adjustments. It is also true; or more precisely, it is that in a large case, a uniform temperature distribution is caused, contrary to the limit cut (1-shaped cut) taken by conventional techniques, by the slit 28 according to the present creation. When the light amplitude is large, the temperature may even decrease due to the uniform distribution; since the power loss is high, a large-sized resistance structure compared to the wavelength is generated; however, for the load of the wire, the structure is changed by a change. The width is opposite to the resistance structure 1 〇 on the substrate 16, and more specifically to the resistance structure of the resistance surface in the longitudinal direction 22; the slit 28 is designed to have a longer length for the purpose of adjustment, and the reflection coefficient is Have a positive impact. In summary, the following advantages can be achieved: the temperature distribution is stable (no hot spots), ensuring that the entire bandwidth has a difficult reflection coefficient, and the cost is reduced by high yield. M311992 The advantageous characteristics of this adjustment method directly affect the use of the resistor substrate. In practice, the corresponding edge conditions must be followed. The (4) edge conditions are, for example, the hottest load at the junction or the finest temperature allowed by the resistor film. Sexuality; this creation is produced by its lion-like nature, especially in high-volume high-frequency resistors (production in the batch production line). The advantage of this solution is that an advantageous thermal distribution can also be achieved in the region of the cut to avoid overheating due to an increase in current density. In a type as described above, the slit is reasonably designed such that the slit completely intercepts the cross section of the resistive film in the direction of the normal to the planar sandwich structure; thus the pen resist film is located behind the slit in the direction of surface frequency energy diffusion. An area is passivated by the king, and the current can no longer be transmitted from the input lead at the first end of the resistive film to the ground lead at the second end of the resistive film, thereby correspondingly changing the surface resistance of the entire resistive film. In summary, the present embodiment has indeed achieved the intended purpose and efficacy, and there is no known creative feature in the same product, the public is in the first place, so the application can meet the application of the new patent. The requirements, 提出 legally filed an application, pleaded for early conclusion, and patented, deeply felt Deze. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view of a preferred embodiment of the high frequency resistor of the present invention. Figure 2 is a graph showing the matching of their characteristic impedances in the M311992 frequency range of the high-frequency resistors shown in Figure 1. Fig. 3 is not a graph showing the matching of its characteristic impedance in the frequency range of the high-frequency resistor adjusted by the slit according to the present invention as shown in Fig. 1. The solid 4 is a top view of another embodiment of the high frequency resistance that has not been adjusted according to the slit of the present invention. Figure 5 is not a top view of the high frequency resistor of Figure 4, the high frequency power
阻已藉由根據本創作之切口之―第—較佳實施 例進行調整。 θ所示係為圖4之高頻電阻之俯視圖，該高頻電 阻已藉由根據本創作之切口之—第二較佳實施 例進行調整。 【主要元件符號說明】 10 電阻膜 12 輸入導線 14 接地導線 16 基板 18 第一末端 20 弟一末端 22 擴散方向 24 法線 26 側面 28 切口 11 M311992 30 開口端 32 邊腳 34 基底 36 延長部分The resistance has been adjusted by the preferred embodiment of the slit according to the present invention. θ is a top view of the high frequency resistor of Fig. 4, which has been adjusted by the second preferred embodiment of the slit according to the present invention. [Main component symbol description] 10 Resistive film 12 Input wire 14 Ground wire 16 Substrate 18 First end 20 Younger end 22 Diffusion direction 24 Normal line 26 Side 28 Incision 11 M311992 30 Open end 32 Side foot 34 Base 36 Extension