TWM526559U - Wafer cassette - Google Patents
Wafer cassette Download PDFInfo
- Publication number
- TWM526559U TWM526559U TW105205692U TW105205692U TWM526559U TW M526559 U TWM526559 U TW M526559U TW 105205692 U TW105205692 U TW 105205692U TW 105205692 U TW105205692 U TW 105205692U TW M526559 U TWM526559 U TW M526559U
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer cassette
- porous structure
- closed end
- wafer
- gas
- Prior art date
Links
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229920001903 high density polyethylene Polymers 0.000 claims description 2
- 239000004700 high-density polyethylene Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- -1 polyethylene Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 40
- 230000003749 cleanliness Effects 0.000 description 5
- 238000007664 blowing Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
屬於半導體晶圓乘載容器,不限制容器內的晶圓承載數量及大小,是一種具有多個通氣孔的晶圓盒。 It belongs to a semiconductor wafer carrier and does not limit the number and size of wafers in the container. It is a wafer cassette with multiple vents.
晶圓的運輸和存放都需要維持在高度潔淨的環境下,以避免微粒灰塵或氣態雜質的汙染。而隨著晶圓產品往高精細度和大體積化發展,汙染機率越高,且起初在晶圓運輸或存放時發生的極微量汙染,若未被及時清除,則容易持續累積成較高濃度的汙染,產生晶圓缺陷,降低良率。 Wafers must be transported and stored in a highly clean environment to avoid contamination by particulate dust or gaseous impurities. With the development of high-definition and large-volume wafer products, the higher the pollution probability, and the extremely small amount of pollution that occurs during wafer transportation or storage, if not removed in time, it is easy to continue to accumulate into higher concentrations. The contamination creates wafer defects and reduces yield.
因此,維持晶圓盒的高度潔淨為半導體製造業的重要課題。晶圓盒的設計可以從幾個面向考量,包括在製程當中晶圓盒在潔淨室傳送或開啟時,須接受潔淨氣體的吹拂,氣體吹拂量和角度等因素,都會影響晶圓盒內部環境的潔淨度;以及晶圓盒在接受清潔時,殘存在晶圓盒內的水氣是否有效率的被排出,也會影響其潔淨度。 Therefore, maintaining the high cleanness of the wafer cassette is an important issue in the semiconductor manufacturing industry. The design of the wafer cassette can be considered from several aspects, including the blowing of the clean gas, the amount of gas blowing and the angle when the wafer cassette is transferred or opened in the clean room during the process, which will affect the internal environment of the wafer cassette. Cleanliness; and when the wafer cassette is cleaned, the moisture remaining in the wafer cassette is efficiently discharged, which also affects the cleanliness.
為了去除晶圓盒內的水氣和微粒等物質,現階段主要的方式是透過吹拂潔淨氣體來提升潔淨度,請參考第1圖,其為已知的晶圓盒結構,晶圓盒體60底部具有進氣孔80,可以透過進氣孔80送入潔淨氣體至盒體60內,以保持盒體內晶圓70的潔淨。 In order to remove moisture, particles and other substances in the wafer cassette, the main way at this stage is to improve the cleanliness by blowing clean gas. Please refer to Figure 1, which is a known wafer cassette structure, wafer cassette 60 The bottom portion has an air inlet hole 80 through which clean gas can be sent into the casing 60 to keep the wafer 70 in the casing clean.
然而此種已知的晶圓盒結構存在有氣流量不均以及產生吹拂死角等問題,有鑒於此,中華民國專利公開第TW201136814A1號「用於微環境之可供滌洗氣穿透之多孔壁」即記載了一種晶圓盒結構改良,是透過在晶圓盒底部設置具有複數個孔洞的塔狀結構,並使潔淨氣體的流通透塔狀結構進入晶圓盒內部,調節氣體排放時的體積與壓力,以求達到氣流均勻化的效果。 However, such a known wafer cassette structure has problems such as uneven air flow rate and blown corners. In view of this, the Republic of China Patent Publication No. TW201136814A1 "Poly-environment porous wall for polyester gas penetration" That is to say, an improvement in the structure of the wafer cassette is achieved by providing a tower-like structure having a plurality of holes at the bottom of the wafer cassette, and allowing the flow of the clean gas to pass through the tower-like structure into the inside of the wafer cassette to adjust the volume of the gas discharge. And pressure to achieve the effect of airflow homogenization.
目前此種設計雖能達到整流效果,但氣體排放量較小,當晶圓尺寸變大時,氣流量恐不足以應付高規格的潔淨度需求,故仍須進一步提出晶圓盒的結構改良,以因應未來大尺寸晶圓所產生的嚴格潔淨度需求。 At present, although this design can achieve the rectification effect, the gas emission is small. When the wafer size becomes larger, the gas flow rate may not be sufficient to meet the high-specified cleanliness requirement, so it is necessary to further propose the structural improvement of the wafer cassette. To meet the stringent cleanliness requirements of future large-size wafers.
本創作是關於一種具有多孔結構的晶圓盒,其結構設計如下:一主體結構,具有一開口端、一閉口端、一底部和一頂部;至少一第一進氣孔,設置於底部並靠近閉口端的位置;一多孔結構,與底部和頂部相連接,且設置於靠近閉口端的位置;以及由閉口端、多孔結構、底部和頂部形成的一容氣室。 The present invention relates to a wafer cassette having a porous structure, the structure of which is designed as follows: a main structure having an open end, a closed end, a bottom and a top; at least one first air inlet, disposed at the bottom and close to a closed end position; a porous structure connected to the bottom and the top and disposed adjacent to the closed end; and a plenum formed by the closed end, the porous structure, the bottom and the top.
由多孔結構和晶圓盒閉口端、底部以及頂部形成的容氣室,將使得填充進入晶圓盒的氣體產生短暫滯留而淤積,再經多孔結構吹拂至晶圓放置位置上。 The gas-filled chamber formed by the porous structure and the closed end, the bottom and the top of the wafer cassette will cause the gas filled into the wafer cassette to be temporarily retained and deposited, and then blown to the wafer placement position through the porous structure.
而本創作的多孔結構並非管狀或塔狀設計,可以提供大容量的氣流,增加氣體排出量與流速,相較於習知的晶圓盒,更適合用作大尺寸晶圓的載具。 The porous structure of the present invention is not a tubular or tower-shaped design, and can provide a large volume of airflow, increase the gas discharge rate and flow rate, and is more suitable as a carrier for large-sized wafers than conventional wafer cassettes.
10‧‧‧主體結構 10‧‧‧Main structure
12‧‧‧開口端 12‧‧‧Open end
14‧‧‧閉口端 14‧‧‧Closed end
16‧‧‧底部 16‧‧‧ bottom
18‧‧‧頂部 18‧‧‧ top
20‧‧‧晶圓 20‧‧‧ wafer
30‧‧‧第一進氣孔 30‧‧‧First air intake
32‧‧‧第一氣流 32‧‧‧First airflow
40‧‧‧多孔結構 40‧‧‧Porous structure
42‧‧‧容氣室 42‧‧‧Air chamber
60‧‧‧盒體 60‧‧‧ box
70‧‧‧晶圓 70‧‧‧ wafer
80‧‧‧進氣孔 80‧‧‧Air intake
第1圖為已知的晶圓盒結構;第2A圖為本創作一實施方式之結構示意圖;第2B圖為本創作一實施方式之氣流方向示意圖。 1 is a schematic view of a known wafer cassette structure; FIG. 2A is a schematic structural view of an embodiment of the present invention; FIG. 2B is a schematic view of a flow direction of an embodiment of the present invention.
本創作目的之一在於提供一種可以容納較大氣流量的晶圓盒,請參考第2A圖,其為本創作一實施方式之結構示意圖。晶圓盒的主體結構10可以被區分為開口端12、閉口端14、底部16和頂部18,晶圓20容置於其中,主體結構10包含至少一第一進氣孔30,設置於底部16並靠近閉口端14的位置;一多孔結構40,與底部16和頂部18相連接,且設置於靠近閉口端14的位置;以及由閉口端14、多孔結構40、底部16和頂部18形成的一容氣室42。 One of the purposes of the present invention is to provide a wafer cassette that can accommodate a large air flow. Please refer to FIG. 2A, which is a schematic structural view of an embodiment of the present invention. The main structure 10 of the wafer cassette can be divided into an open end 12, a closed end 14, a bottom 16 and a top 18. The wafer 20 is received therein, and the main structure 10 includes at least one first air inlet 30 disposed at the bottom 16 And adjacent to the closed end 14; a porous structure 40 coupled to the bottom portion 16 and the top portion 18 and disposed adjacent the closed end 14; and formed by the closed end 14, the porous structure 40, the bottom portion 16, and the top portion 18. A gas chamber 42.
其中,多孔結構40具有至少三孔徑,而在本實施方式中,至少三孔徑之每一個孔徑的直徑,需介於0.05至50微米(μm)之間,並且所構成的總出氣面積需大於0.12平方公尺,以形成大出氣量的多孔結構。 Wherein, the porous structure 40 has at least three pore diameters, and in the present embodiment, the diameter of each of the at least three pore diameters is required to be between 0.05 and 50 micrometers (μm), and the total gas output area is required to be greater than 0.12. Square meters to form a porous structure with a large outflow.
進一步,多孔結構40的材質可以是燒結陶瓷或燒結金屬,又或者是燒結高密度聚乙烯或燒結超高分子聚乙烯。 Further, the material of the porous structure 40 may be sintered ceramic or sintered metal, or sintered high density polyethylene or sintered ultra high molecular polyethylene.
而多孔結構42的邊緣與閉口端14、底部16、頂部18均相連接,以形成容氣室42,藉此提供一整面的多孔結構42,有效改善習知塔狀或管狀出氣結構造成氣流量不足的問題。 The edge of the porous structure 42 is connected to the closed end 14, the bottom 16 and the top 18 to form the gas-receiving chamber 42, thereby providing a full-face porous structure 42 for effectively improving the gas generated by the conventional tower-shaped or tubular gas-exhausting structure. Insufficient traffic.
請參考第2B圖,其為本創作一實施方式之氣流方向示意圖,以進一步說明本晶圓盒結構對於盒內氣體流向的影響。來自於潔淨室 的潔淨氣體可以自第一進氣孔30進入容氣室42,首先形成垂直向上的第一氣流32,第一氣流32將在容氣室42內淤積後,約形成1,000帕(Pa)至200,000帕(Pa)的氣體壓力後,逐步至自多孔結構40的至少三孔徑,將潔淨氣體均勻排出。 Please refer to FIG. 2B, which is a schematic diagram of the airflow direction of an embodiment of the present invention to further illustrate the influence of the structure of the wafer cassette on the gas flow direction in the cartridge. From the clean room The clean gas may enter the gas plenum 42 from the first gas inlet hole 30, first forming a vertical upward first gas flow 32, and the first gas flow 32 will be formed in the gas plenum 42 to form about 1,000 Pa (Pa) to 200,000. After the gas pressure of the Pa (Pa), the clean gas is uniformly discharged gradually from at least three pore sizes of the porous structure 40.
在前述的實施方式中,至少一第一進氣孔30的孔徑可以為1至50毫米,適用於既有的潔淨室供氣管規格,避免徒增製程成本。 In the foregoing embodiment, the at least one first air inlet hole 30 may have a hole diameter of 1 to 50 mm, which is suitable for the existing clean room air supply pipe specification, and avoids an increase in the manufacturing process cost.
且至少一第一進氣孔30還可以設置有過濾膜,確保經過第一進氣孔30進入主體結構10的氣體為高度潔淨之狀態。 The at least one first air inlet hole 30 may also be provided with a filter film to ensure that the gas entering the main body structure 10 through the first air inlet hole 30 is in a highly clean state.
本創作之晶圓盒,能夠提供大流量且均勻的潔淨氣體,特別適用於12吋以上的大型晶圓載具,且結構設計符合現有的潔淨室規格,在無需更動製程設備的情況下即可實施。 The created wafer cassette can provide large flow and uniform clean gas, especially suitable for large wafer carriers of 12吋 or more, and the structure design conforms to the existing clean room specifications, and can be implemented without changing the process equipment. .
10‧‧‧主體結構 10‧‧‧Main structure
12‧‧‧開口端 12‧‧‧Open end
14‧‧‧閉口端 14‧‧‧Closed end
16‧‧‧底部 16‧‧‧ bottom
18‧‧‧頂部 18‧‧‧ top
20‧‧‧晶圓 20‧‧‧ wafer
30‧‧‧第一進氣孔 30‧‧‧First air intake
40‧‧‧多孔結構 40‧‧‧Porous structure
42‧‧‧容氣室 42‧‧‧Air chamber
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105205692U TWM526559U (en) | 2016-04-22 | 2016-04-22 | Wafer cassette |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105205692U TWM526559U (en) | 2016-04-22 | 2016-04-22 | Wafer cassette |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM526559U true TWM526559U (en) | 2016-08-01 |
Family
ID=57182577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105205692U TWM526559U (en) | 2016-04-22 | 2016-04-22 | Wafer cassette |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM526559U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048455A (en) * | 2018-10-12 | 2020-04-21 | 台北科技大学 | Laminar flow device |
| TWI726402B (en) * | 2018-08-28 | 2021-05-01 | 美商恩特葛瑞斯股份有限公司 | Membrane diffuser for a substrate container |
-
2016
- 2016-04-22 TW TW105205692U patent/TWM526559U/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI726402B (en) * | 2018-08-28 | 2021-05-01 | 美商恩特葛瑞斯股份有限公司 | Membrane diffuser for a substrate container |
| US11610795B2 (en) | 2018-08-28 | 2023-03-21 | Entegris, Inc. | Membrane diffuser for a substrate container |
| US11901205B2 (en) | 2018-08-28 | 2024-02-13 | Entegris, Inc. | Membrane diffuser for a substrate container |
| CN111048455A (en) * | 2018-10-12 | 2020-04-21 | 台北科技大学 | Laminar flow device |
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