UA98314C2 - Сапфирные подложки и процессы их изготовления - Google Patents
Сапфирные подложки и процессы их изготовленияInfo
- Publication number
- UA98314C2 UA98314C2 UAA200906859A UAA200906859A UA98314C2 UA 98314 C2 UA98314 C2 UA 98314C2 UA A200906859 A UAA200906859 A UA A200906859A UA A200906859 A UAA200906859 A UA A200906859A UA 98314 C2 UA98314 C2 UA 98314C2
- Authority
- UA
- Ukraine
- Prior art keywords
- plane
- methods
- making same
- sapphire substrates
- nttv
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/256—Heavy metal or aluminum or compound thereof
- Y10T428/257—Iron oxide or aluminum oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Описана сапфирная подложка, которая имеет в целом плоскую поверхность с кристаллографической ориентацией, выбранной из группы, состоящей из а-плоскостной, r-плоскостной, m-плоскостной и с-плоскостной ориентаций, и величиной nTTV не более чем приблизительно 0,037 мкм/см, где nTTV является общей вариацией толщины, нормированной к площади поверхности указанной в целом плоской поверхности, где указанная подложка имеет диаметр не менее примерно .
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US88234806P | 2006-12-28 | 2006-12-28 | |
| PCT/US2007/088576 WO2008083081A2 (en) | 2006-12-28 | 2007-12-21 | Sapphire substrates and methods of making same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA98314C2 true UA98314C2 (ru) | 2012-05-10 |
Family
ID=39561886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UAA200906859A UA98314C2 (ru) | 2006-12-28 | 2007-12-21 | Сапфирные подложки и процессы их изготовления |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8455879B2 (ru) |
| EP (1) | EP2094439A2 (ru) |
| JP (2) | JP5226695B2 (ru) |
| KR (2) | KR101230941B1 (ru) |
| CN (1) | CN101616772B (ru) |
| CA (1) | CA2673662C (ru) |
| RU (1) | RU2412037C1 (ru) |
| TW (1) | TWI350784B (ru) |
| UA (1) | UA98314C2 (ru) |
| WO (1) | WO2008083081A2 (ru) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8740670B2 (en) | 2006-12-28 | 2014-06-03 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
| EP2121242B1 (en) | 2006-12-28 | 2012-02-15 | Saint-Gobain Ceramics & Plastics, Inc. | Method of grinding a sapphire substrate |
| KR101230941B1 (ko) | 2006-12-28 | 2013-02-07 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 사파이어 기판 및 그 제조 방법 |
| JP2010103424A (ja) * | 2008-10-27 | 2010-05-06 | Showa Denko Kk | 半導体発光素子の製造方法 |
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| US20150044447A1 (en) * | 2012-02-13 | 2015-02-12 | Silicon Genesis Corporation | Cleaving thin layer from bulk material and apparatus including cleaved thin layer |
| US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
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| JP2013219215A (ja) * | 2012-04-10 | 2013-10-24 | Disco Abrasive Syst Ltd | サファイアウエーハの加工方法 |
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| US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
| US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
| US9728415B2 (en) | 2013-12-19 | 2017-08-08 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of wafer thinning involving edge trimming and CMP |
| EP3090530A4 (en) * | 2013-12-31 | 2017-10-25 | Saint-Gobain Ceramics & Plastics, Inc. | Article comprising a transparent body including a layer of a ceramic material and a method of forming the same |
| US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
| CN104502175A (zh) * | 2014-12-23 | 2015-04-08 | 信阳同合车轮有限公司 | 车轮钢化学成分试样的分析方法 |
| US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
| RU2635132C1 (ru) * | 2017-02-20 | 2017-11-09 | Общество с ограниченной ответственностью "Научно-технический центр "Компас" (ООО "НТЦ "Компас") | Полировальная суспензия для сапфировых подложек |
| RU2702948C1 (ru) * | 2017-05-26 | 2019-10-14 | Соко Кагаку Ко., Лтд. | Основание, нитридный полупроводниковый излучающий ультрафиолетовое излучение элемент и способ производства основания |
| CN109719614A (zh) * | 2017-10-31 | 2019-05-07 | 上海新昇半导体科技有限公司 | 一种抛光设备 |
| TWI744539B (zh) * | 2018-07-12 | 2021-11-01 | 日商信越化學工業股份有限公司 | 半導體用基板及其製造方法 |
| JP7103305B2 (ja) * | 2019-05-29 | 2022-07-20 | 信越半導体株式会社 | インゴットの切断方法 |
| CN110744732B (zh) * | 2019-09-03 | 2022-04-15 | 福建晶安光电有限公司 | 一种高性能衬底的制作工艺 |
| CN113021180A (zh) * | 2021-03-12 | 2021-06-25 | 长江存储科技有限责任公司 | 一种研磨轮、研磨设备 |
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| KR101230941B1 (ko) | 2006-12-28 | 2013-02-07 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 사파이어 기판 및 그 제조 방법 |
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-
2007
- 2007-12-21 KR KR1020097013039A patent/KR101230941B1/ko not_active Expired - Fee Related
- 2007-12-21 US US11/963,420 patent/US8455879B2/en not_active Expired - Fee Related
- 2007-12-21 CA CA2673662A patent/CA2673662C/en not_active Expired - Fee Related
- 2007-12-21 KR KR1020117023299A patent/KR20110124355A/ko not_active Withdrawn
- 2007-12-21 WO PCT/US2007/088576 patent/WO2008083081A2/en not_active Ceased
- 2007-12-21 TW TW096149564A patent/TWI350784B/zh not_active IP Right Cessation
- 2007-12-21 UA UAA200906859A patent/UA98314C2/ru unknown
- 2007-12-21 JP JP2009544222A patent/JP5226695B2/ja not_active Expired - Fee Related
- 2007-12-21 RU RU2009128752/02A patent/RU2412037C1/ru not_active IP Right Cessation
- 2007-12-21 CN CN2007800486291A patent/CN101616772B/zh not_active Expired - Fee Related
- 2007-12-21 EP EP07869756A patent/EP2094439A2/en not_active Ceased
-
2013
- 2013-03-14 JP JP2013052556A patent/JP5513647B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101616772B (zh) | 2012-03-21 |
| JP2010515270A (ja) | 2010-05-06 |
| JP5513647B2 (ja) | 2014-06-04 |
| KR20110124355A (ko) | 2011-11-16 |
| JP2013128147A (ja) | 2013-06-27 |
| JP5226695B2 (ja) | 2013-07-03 |
| US20080164458A1 (en) | 2008-07-10 |
| WO2008083081A3 (en) | 2008-11-06 |
| WO2008083081A2 (en) | 2008-07-10 |
| RU2412037C1 (ru) | 2011-02-20 |
| TWI350784B (en) | 2011-10-21 |
| CN101616772A (zh) | 2009-12-30 |
| TW200848204A (en) | 2008-12-16 |
| KR101230941B1 (ko) | 2013-02-07 |
| CA2673662C (en) | 2012-07-24 |
| CA2673662A1 (en) | 2008-07-10 |
| US8455879B2 (en) | 2013-06-04 |
| EP2094439A2 (en) | 2009-09-02 |
| KR20090094300A (ko) | 2009-09-04 |
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