US10304754B2 - Heat dissipation structure of semiconductor device - Google Patents

Heat dissipation structure of semiconductor device Download PDF

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Publication number
US10304754B2
US10304754B2 US15/756,047 US201715756047A US10304754B2 US 10304754 B2 US10304754 B2 US 10304754B2 US 201715756047 A US201715756047 A US 201715756047A US 10304754 B2 US10304754 B2 US 10304754B2
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Prior art keywords
semiconductor device
heat dissipation
heat
dissipation structure
substrate
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US15/756,047
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US20190027421A1 (en
Inventor
Takeo Nishikawa
Takayoshi TAWARAGI
Eiichi Omura
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Omron Corp
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Omron Corp
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    • H01L23/4006—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws
    • H10W40/613—Bolts or screws for stacked arrangements of a plurality of semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611—Bolts or screws
    • H01L23/36—
    • H01L23/40—
    • H01L23/49827—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H01L2023/4018—
    • H01L2023/4068—
    • H01L2023/4087—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/231—Arrangements for cooling characterised by their places of attachment or cooling paths
    • H10W40/242—Arrangements for cooling characterised by their places of attachment or cooling paths comprising thermal conductors between chips and the and the arrangements for cooling, e.g. compliant heat-spreaders

Definitions

  • the present invention relates to a heat dissipation structure (also referred to as a cooling structure) of a surface mount semiconductor device (semiconductor device), and particularly relates to a heat dissipation structure with heat dissipation and insulation reliability, which can suitably be applied to a thin package semiconductor device.
  • FIG. 7( a ) is a schematic perspective view exemplarily showing a conventional lead type discrete component 1 .
  • FIG. 7( b ) is a schematic perspective view exemplarily showing a surface mount semiconductor device 10 that has recently been developed.
  • the semiconductor device 10 In association with increasing an operational speed of a semiconductor switching device, it is necessary to reduce parasitic inductance of the device itself.
  • the semiconductor device 10 As shown in FIG. 7( a ) , for example, has a very high switching speed. Thus, thinning of its device package has progressed so as to realize the smallest possible parasitic inductance.
  • such a semiconductor device 10 is housed in an ultra-thin package 11 , and has, for example, an electrical bonding surface 11 a and a heat dissipation surface 11 b on the opposite side.
  • an electrical bonding surface 11 a On the electrical bonding surface 11 a , at least one electrode (terminal) 12 that is electrically connected to a substrate is disposed.
  • a large electrode 13 On the heat dissipation surface 11 b , a large electrode 13 that also serves to dissipate heat is disposed.
  • FIG. 8( a ) is a cross-sectional view exemplarily and schematically showing a conventional heat dissipation structure 202 .
  • FIG. 8( b ) is a cross-sectional view exemplarily and schematically showing a heat dissipation structure 202 A, which is a variation of the heat dissipation structure 202 .
  • each device is required to have the maximum possible capacity, which needs a structure that can efficiently dissipate generated heat.
  • a heat sink 30 is directly connected to the semiconductor device 10 .
  • the semiconductor device 10 may be connected to the heat sink 30 via a conductive TIM 33 (for example, 50 W/deg ⁇ m), which is an example of conductive thermal interface materials (TIM).
  • a conductive TIM 33 for example, 50 W/deg ⁇ m
  • TIM conductive thermal interface materials
  • the distance between the electrodes 12 having different voltages is reduced, and the insulation distance may not be maintained depending on conditions of a conductive material such as solder, which may result in generation of electrical breakdown that damages the semiconductor device 10 .
  • an insulating TIM 43 (for example, ⁇ 10 W/deg ⁇ m) between the semiconductor device 10 and the heat sink 30 in place of the conductive TIM 33 , as shown, for example, in the heat dissipation structure 202 A in FIG. 8( b ) .
  • an insulating TIM 43 for example, ⁇ 10 W/deg ⁇ m
  • the device cannot have a large capacity due to a low coefficient of thermal conductivity. For this reason, there needs to be increase in size and capacity of the semiconductor device 10 , and/or parallel use of multiple semiconductor devices 10 , which may increase overall cost.
  • an object of the present invention is to provide a heat dissipation structure of a semiconductor device with an excellent heat dissipation as well as an excellent insulation reliability that can be suitably applied to a thin type surface mount semiconductor device.
  • a heat dissipation structure of a semiconductor device includes: an electrical bonding surface electrically connected to a substrate; and a heat dissipation surface as an opposite side of the electrical bonding surface.
  • the heat dissipation surface makes contact with a high-heat-transferring conductive member via a non-insulating member, and the high-heat-transferring conductive member makes contact with a heat dissipation component via an insulating member.
  • a surface of the high-heat-transferring conductive member facing the semiconductor device includes a recess part formed in at least a part in a vicinity of an outer periphery of the semiconductor device.
  • the heat dissipation structure of a semiconductor device With the above-described heat dissipation structure of a semiconductor device, heat generated by the semiconductor device is transmitted from the heat dissipation surface to the high-heat-transferring conductive member via the non-insulating member so as to be diffused, and further is transmitted to the heat dissipation component via the insulating member.
  • the heat dissipation structure has an excellent heat dissipation.
  • the substrate may be fixed to the high-heat-transferring conductive member by a conductive fixing material (such as a screw) so that at least a part of a pattern on the substrate is conducted to the high-heat-transferring conductive member.
  • a conductive fixing material such as a screw
  • the substrate may be further fixed to the high-heat-transferring conductive member by an insulating fixing material (such as a screw).
  • heat generated by the semiconductor device is transmitted from a heat dissipation surface to a high-heat-transferring conductive member via a non-insulating member so as to be diffused, and further is transmitted to a heat dissipation component via an insulating member.
  • the heat dissipation structure has an excellent heat dissipation.
  • FIG. 1 is a cross-sectional view schematically showing a heat dissipation structure 103 according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view schematically showing a heat dissipation structure 103 A according to a variation of the first embodiment of the present invention.
  • FIG. 3( a ) is a perspective view schematically showing a heat dissipation structure 202 B in which a conventional heat dissipation structure 202 A is further mounted on a heat sink 30 via a conductive TIM 33 .
  • FIG. 3( b ) is a cross-sectional view thereof.
  • FIG. 4 is a table indicating detailed conditions of a thermal simulation performed in the heat dissipation structure 202 B shown in FIGS. 3( a ) and 3( b ) .
  • FIG. 5( a ) is a cross-sectional view schematically showing a heat dissipation structure 103 B largely similar to the heat dissipation structure 103 according to the first embodiment of the present invention.
  • FIG. 5( b ) is a partially enlarged perspective view thereof, and
  • FIG. 5( c ) is a cross-sectional view thereof.
  • FIG. 6 is a table indicating detailed conditions of a thermal simulation performed in the heat dissipation structure 103 B shown in FIGS. 5( a ) to 5( c ) .
  • FIG. 7( a ) is a schematic perspective view exemplarily showing a conventional lead type discrete component 1 .
  • FIG. 7( b ) is a schematic perspective view exemplarily showing a surface mount semiconductor device 10 that has recently been developed.
  • FIG. 8( a ) is a cross-sectional view exemplarily and schematically showing another conventional heat dissipation structure 202 .
  • FIG. 8( b ) is a cross-sectional view exemplarily and schematically showing the heat dissipation structure 202 A, which is a variation of the heat dissipation structure 202 .
  • FIG. 1 is a cross-sectional view schematically showing a heat dissipation structure 103 according to a first embodiment of the present invention.
  • a heat spreader 31 as one example of non-insulating heat spreading elements is mounted on the heat sink 30 via an insulating TIM 43 .
  • a semiconductor device 10 is mounted via a conductive TIM 33 , with a heat dissipation surface 11 b of the semiconductor device 10 being a lower side. Electrodes 12 on an electrical bonding surface 11 a of the semiconductor device 10 are electrically connected to a lower surface pattern 22 of a substrate 20 by soldering and the like.
  • a recess part 31 a is formed near the outer periphery of the semiconductor device 10 , and more specifically, in the vicinity of the electrodes 12 and the like that are electrically connected to the substrate 20 by soldering and the like (especially the electrodes 12 to which are applied potentials different from that is applied to the heat dissipation surface 11 b ).
  • the recess part 31 a has, for example, a groove shape along the outer periphery of the semiconductor device 10 , and the internal surface of the groove is preferably formed as a shape substantially having an equal distance from any of the soldering positions.
  • the resistance value of the conductive TIM 33 is not zero, but changes according to the temperature and/or the adhesion state. Thus, it is assumed that the resistance value changes during driving of the semiconductor device 10 . As a result, the potential of the heat spreader 31 may become instable, which may lead to malfunction of or damage to the semiconductor device 10 due to generation of voltage noise or surge voltage.
  • a screw hole 31 b may be formed in the heat spreader 31 so as to fix the substrate 20 to the heat spreader 31 by screwing a conductive screw 51 from the surface of the substrate 20 .
  • the heat spreader 31 is electrically connected to the pattern on the substrate 20 (for example, the lower surface pattern 22 ) that should have the same potential as the heat spreader 31 , so that the electrical stability is improved.
  • the semiconductor device 10 it is possible to more reliably avoid electrical breakdown of the semiconductor device 10 .
  • FIG. 2 is a cross-sectional view schematically showing a heat dissipation structure 103 A of the semiconductor device 10 according to a variation of the first embodiment of the present invention.
  • the common elements with the first embodiment are indicated by the same reference numerals, and hereinafter, a description will be given mainly on the configuration that differs from the configuration of the first embodiment.
  • another screw hole 31 c may be formed in the heat spreader 31 so as to fix the substrate 20 to the heat spreader 31 by screwing an insulating screw 52 .
  • FIG. 3( a ) is a perspective view schematically showing a heat dissipation structure 202 B in which the conventional heat dissipation structure 202 A is further mounted on the heat sink 30 via the conductive TIM 33 .
  • FIG. 3( b ) is a cross-sectional view thereof.
  • FIG. 4 is a table indicating detailed conditions of a thermal simulation performed in the heat dissipation structure 202 B shown in FIGS. 3( a ) and 3( b ) .
  • the thermal simulation was performed in the heat dissipation structure 202 B under conditions indicated in FIG. 4 .
  • the insulating TIM 43 (0.3 mmt) was interposed between the semiconductor device 10 and the heat spreader 31
  • the conductive TIM 33 0.3 mmt was interposed between the heat spreader 31 and the heat sink 30 .
  • FIG. 5( a ) is a cross-sectional view schematically showing a heat dissipation structure 103 B largely similar to the heat dissipation structure 103 according to the first embodiment of the present invention.
  • FIG. 5( b ) is a partially enlarged perspective view thereof
  • FIG. 5( c ) is a cross-sectional view thereof.
  • FIG. 6 is a table indicating detailed conditions of a thermal simulation performed in the heat dissipation structure 103 B shown in FIGS. 5( a ) to 5( c ) .
  • the thermal simulation was performed in the heat dissipation structure 103 B under conditions indicated in FIG. 6 .
  • the recess part 31 a is formed in a part of the heat spreader 31 that is close to one side of the semiconductor device 10 .
  • the semiconductor device 10 is connected to the heat spreader 31 via the conductive TIM 33 while the heat spreader 31 is connected to the heat sink 30 via the insulating TIM 43 .
  • the recess part 31 a formed in the heat spreader 31 exerts little or no adverse effect on thermal diffusion.

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
US15/756,047 2016-04-15 2017-01-25 Heat dissipation structure of semiconductor device Active US10304754B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016081963A JP6790432B2 (ja) 2016-04-15 2016-04-15 半導体装置の放熱構造
JP2016-081963 2016-04-15
PCT/JP2017/002440 WO2017179264A1 (fr) 2016-04-15 2017-01-25 Structure de dissipation de chaleur de dispositif à semi-conducteur

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US20190027421A1 US20190027421A1 (en) 2019-01-24
US10304754B2 true US10304754B2 (en) 2019-05-28

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US (1) US10304754B2 (fr)
EP (1) EP3327768B1 (fr)
JP (1) JP6790432B2 (fr)
KR (1) KR20180019221A (fr)
WO (1) WO2017179264A1 (fr)

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Publication number Priority date Publication date Assignee Title
US11355419B2 (en) * 2018-01-11 2022-06-07 Amosense Co., Ltd. Power semiconductor module
CN109637988A (zh) * 2019-01-29 2019-04-16 西安微电子技术研究所 一种低热阻压力可控式散热盒体结构
EP3951863A1 (fr) * 2020-08-07 2022-02-09 Siemens Aktiengesellschaft Système de contact à isolation fiable
JP7523419B2 (ja) * 2021-10-04 2024-07-26 三菱電機株式会社 電力用半導体装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183076A (ja) 1992-01-07 1993-07-23 Fujitsu Ltd 半導体パッケージ
JP2000311971A (ja) 1999-04-28 2000-11-07 Hitachi Ltd 半導体装置とそのヒートシンク
JP2006147862A (ja) 2004-11-19 2006-06-08 Hoshizaki Electric Co Ltd 冷却貯蔵庫の運転制御装置
JP2007258448A (ja) 2006-03-23 2007-10-04 Fujitsu Ltd 半導体装置
JP2008300476A (ja) 2007-05-30 2008-12-11 Sumitomo Electric Ind Ltd パワーモジュール
JP2009283768A (ja) 2008-05-23 2009-12-03 Yokogawa Electric Corp 冷却シールド装置
US20140262192A1 (en) * 2013-03-18 2014-09-18 International Business Machines Corporation Thermally reversible thermal interface materials with improved moisture resistance
JP2014241340A (ja) 2013-06-11 2014-12-25 株式会社デンソー 放熱絶縁シート及び半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5647912B2 (ja) * 2011-02-02 2015-01-07 新電元工業株式会社 電子回路装置及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183076A (ja) 1992-01-07 1993-07-23 Fujitsu Ltd 半導体パッケージ
JP2000311971A (ja) 1999-04-28 2000-11-07 Hitachi Ltd 半導体装置とそのヒートシンク
JP2006147862A (ja) 2004-11-19 2006-06-08 Hoshizaki Electric Co Ltd 冷却貯蔵庫の運転制御装置
JP2007258448A (ja) 2006-03-23 2007-10-04 Fujitsu Ltd 半導体装置
JP2008300476A (ja) 2007-05-30 2008-12-11 Sumitomo Electric Ind Ltd パワーモジュール
JP2009283768A (ja) 2008-05-23 2009-12-03 Yokogawa Electric Corp 冷却シールド装置
US20140262192A1 (en) * 2013-03-18 2014-09-18 International Business Machines Corporation Thermally reversible thermal interface materials with improved moisture resistance
JP2014241340A (ja) 2013-06-11 2014-12-25 株式会社デンソー 放熱絶縁シート及び半導体装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
English translation of the International Search Report of PCT/JP2017/002440 dated Apr. 4, 2017.
English translation of the Written Opinion of PCT/JP2017/002440 dated Apr. 4, 2017.
Extended European search report dated Apr. 3, 2019 in a counterpart European patent application No. 17782083.4.
Translation of JP-2007258448-A (Year: 2018). *

Also Published As

Publication number Publication date
JP6790432B2 (ja) 2020-11-25
KR20180019221A (ko) 2018-02-23
US20190027421A1 (en) 2019-01-24
EP3327768A4 (fr) 2019-05-01
EP3327768A1 (fr) 2018-05-30
WO2017179264A1 (fr) 2017-10-19
JP2017191903A (ja) 2017-10-19
EP3327768B1 (fr) 2021-01-06

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